Abstract: A photocoupler includes a silicon substrate, a light receiving element embedded in the substrate, a transparent insulating film formed on the substrate to cover the light receiving element, and a light emitting element facing the light receiving element via the transparent insulating film. The light emitting element is an organic electroluminescent light source made up of a metal electrode, a transparent electrode, and a light emitting layer disposed between the metal electrode and the transparent electrode.

Abstract: An image sensor includes: a light source that irradiates a light on an object; a lens body that converges a reflection of the light from the object; a plurality of IC chips that receive the reflection passed through the lens body; and a transparent member provided between the IC chips and the lens body. The transparent member includes a refractive index changing region provided at a portion opposite to a gap between adjacent IC chips. A refractive index in the refractive index changing region increases continuously or stepwise toward an inner portion of the transparent member from a surface of the transparent member on an IC chips side so that the refractive index changing region refracts a part of the reflection to be incident into the gap to the IC chips.

Abstract: A monolithic photo-chip with a solar device and a light-emitting device that can be manufactured by utilizing a method of selective area growth (SAG) is provided, which has the advantages of simple structure, compactness and cost-effectiveness. Moreover, a solar-powered illuminator including the monolithic photo-chip and a rechargeable battery is provided, which has the advantages of small size, compactness, simple integration, easy installation and cost-effectiveness. Accordingly, the solar-powered illuminator is very suitable for versatile application fields, such as the LD application field including a laser pointer, a laser sight, a laser aiming device, a laser level and a laser measuring tool, etc; or the LED application field including a decoration lamp, a courtyard lamp, a garden lamp and a advertisement lamp, a streetlamp, a warning sign and a indication sign for the road application, etc.

Abstract: A uniform high brightness light source is provided using a plurality of light emitting diode (LED) chips with slightly different pump wavelengths with a wavelength converting element that includes at least two different wavelength converting materials that convert the light to different colors of light. The intensity of the light produced by the LED chips may be varied to provide a tunable CCT white point. The wavelength converting element may be, e.g., a stack or mixture of phosphor or luminescent ceramics. Moreover, the manufacturing process of the light source is simplified because the LED chips are all manufactured using the same technology eliminating the need to manufacture different types of chips.

Abstract: An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.

Abstract: A solar-powered illuminator, which includes an integrated light receiving and emitting device having a solar chip and a LED chip, a rechargeable battery and an Application-Specific Integrated Circuit (ASIC), is provided. A transparent encapsulant of the integrated light receiving and emitting device focuses the incident sunlight on the solar chip to generate a first voltage. The rechargeable battery is electrically connected to the integrated light receiving and emitting device and is charged by the solar chip in the first voltage. The ASIC is electrically connected to the rechargeable battery and the light receiving and emitting device, and it steps up the first voltage into a second voltage and drives the LED chip to emit light via the discharge of the rechargeable battery in the second voltage. Consequently, the solar-powered illuminator has the advantages of small size, compactness, simple integration, easy installation and cost-effectiveness.

Abstract: A matrix of detection pixels and a photoelectric detector that includes a matrix of detection pixels and a reading circuit of loads detected by the detection pixels of the matrix. A detection pixel includes a photosensitive semi-conductor area with a first face covered with a first electrode and a second face located opposite the first face and covered with a second electrode. The first electrode includes a metal pattern that can collect the electrical loads generated by the detection pixel. The matrix can be applied, for example, to the creation of sensors used in scanners and photographic apparatuses or digital cameras or biosensors.

Abstract: The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAlyGa1-x-yN (0<x<1, 0?y?0.2), wherein a threshold mode gain of each of the at least quantum well is not more than 12 cm?1, and wherein a standard deviation of a microscopic fluctuation in a band gap energy of the at least luminescent layer is in the range of 75 meV to 200 meV.

Abstract: An optoisolator device is shown having a die attachment device with a planar surface. A first circuit die has first and second planar surfaces and a first side surface. A receiver circuit and a first photodiode are formed on the first planar surface of the first circuit die, where the first photodiode is electrically coupled to the receiver circuit. The second planar surface of the first circuit die is attached to the planar surface of the die attachment device. A second circuit die has a transmitter circuit that includes a first light emitting diode and is attached to the die attachment device in a position adjacent to the first side surface of the first circuit die. A clear plastic layer is formed on the planar surface of the die attachment device over the first and second circuit dies. An opaque layer may be formed over the clear plastic layer.

Abstract: An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

Abstract: One embodiment relates to an optical navigation device. The device includes a lead frame having reference features, a laser, a detector array, and an optical component having alignment features. The laser is attached to the lead frame and positioned in reference to the reference features of the lead frame. The detector array is attached to the lead frame and positioned in reference to the reference features of the lead frame. The optical component is coupled to the lead frame so that its alignment features register to the reference features of the lead frame. In this way, the molded optical component is passively aligned to the laser and the detector array. Other embodiments are also disclosed.

Abstract: Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

Abstract: A stem for an optical element includes a base-like portion located on a portion of a package side surface of an eyelet, higher than the package side surface. A block is located on a surface of the base-like portion of the eyelet. An optical element mounting surface of the block projects outward, overhanging a side face of the base-like portion, close to lead electrodes which are inserted through holes of the eyelet, respectively, and sealed with sealing glass. High-frequency line substrates are located on the optical element mounting surface of the block, and Au films of the high-frequency line substrate are electrically connected to respective lead electrodes.

Abstract: An electrode structure includes a first conductive layer, an insulation layer that covers at least a portion of a marginal area of an upper surface of the first conductive layer and has a first sloped section that slopes down toward the upper surface of the first conductive layer, a first electrode having one end formed on the first conductive layer and another end formed on the first sloped section, a third electrode that is formed on the first electrode and the insulation layer, and covers the another end of the first electrode.

Abstract: There is provided a monolithic three dimensional TFT mask ROM array. The array includes a plurality of device levels. Each of the plurality of device levels contains a first set of enabled TFTs and a second set of partially or totally disabled TFTs.

Abstract: As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter terminal (152) for connecting a drive circuit for driving an IGBT device to the emitter electrode (12) are provided. The first emitter terminal (151) and the second emitter terminal (152) are individually connected to the emitter terminal (12) by wire bonding.

Abstract: To improve reliability in controlling an output of a semiconductor laser. There are provided a prism adhered to the semiconductor substrate, and having a light reflection surface formed with a light reflection film for reflecting a laser beam emitted from the semiconductor laser and a light transmission surface for transmitting a laser beam emitted from the semiconductor laser outside an aperture range of the objective lens; a monitor photoreceptor disposed in an area of the semiconductor substrate where the prism is disposed, and receiving the laser beam transmitted through the light transmission surface of the prism; and a signal detection photoreceptor disposed outside the area of the semiconductor substrate where the prism is disposed, for receiving, as return light, a laser beam reflected at the light reflection surface of the prism and converged upon the record surface of the disk-shaped recording medium via the objective lens.

Abstract: A semiconductor optical device comprises a lower cladding layer of a first conductive type, an upper cladding layer of a second conductive type, and an active layer. The lower cladding layer has a first region and a second region. The first region extends in a direction of a predetermined axis, and the second region is located adjacent to the first region. The active layer is provided between the first region of the lower cladding layer and the upper cladding layer. The thickness of the active layer is changed in the direction such that TM mode gain and TE mode gain are substantially equal to each other.

Abstract: A semiconductor optical device (e.g. a resonant cavity device in this form of an LED or a laser) comprises a single substrate arranged for emitting light (O) for incidence on a sample or other element and also responsive to light (D), e.g. of a different wavelenght, received back from this sample or other element: the device further comprises means for monitoring a characteristic (e.g. its current-voltage characteristic) which varies in dependence upon the light (D) received back from the sample or other element.