Abstract: An organic light-emitting display device including a pixel-defining layer and a spacer, and a method of manufacturing the same. The method includes: forming an organic insulating material layer on a pixel electrode; placing a half-tone mask including a light-blocking portion, a partial-transmitting portion, and a light-transmitting portion on the organic insulating material layer and performing an exposure process so that the pixel electrode corresponds to the light-transmitting portion, a pixel-defining layer at least partially surrounding the pixel electrode corresponds to the partial-transmitting portion, and a spacer adjacent to the pixel-defining layer corresponds to the light-blocking portion; and etching a portion of the organic insulating material layer that is exposed so that a pixel area on the pixel electrode is at least partially surrounded by the pixel-defining layer and the spacer. A taper angle of the pixel-defining layer is between about 15 degrees to about 30 degrees.

Abstract: An organic light emitting display device includes a substrate having transmitting and pixel regions, the pixel regions being separated by the transmitting regions, at least one thin film transistor in each of the pixel regions, a plurality of transparent first conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a plurality of second conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a passivation layer, a plurality of pixel electrodes on the passivation layer, the pixel electrodes being separated and positioned to correspond to respective pixel regions, each of the pixel electrodes being electrically connected to and overlapping a corresponding thin film transistor, an opposite electrode overlapping the pixel electrodes in the transmitting and pixel regions, and an organic emission layer between the pixel electrodes and the opposite electrode.

Abstract: This invention relates to a light emitting diode device (100) including an outer casing (102), a light emitting diode element (114), which includes at least one light emitting diode (114a), arranged within the outer casing, a light outlet member (108) constituting a part of the outer casing, a sealed cavity (104) containing a controlled atmosphere, and a seal (110) arranged to seal the cavity. The light emitting diode device further comprises a remote organic phosphor element (116) arranged in the sealed cavity.

Abstract: A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.

Abstract: An organic electroluminescent display includes a substrate having a pixel area, a pixel definition layer having an opening corresponding to the pixel area, a pixel electrode in the pixel area, a hole injection layer on the pixel electrode, a conductive primer layer in the opening and on the hole injection layer, the conductive primer layer being more lyophilic than the hole injection layer, a hole transfer layer in the opening and on the conductive primer layer, an organic light-emitting layer on the hole transfer layer, and a common electrode on the organic light-emitting layer.

Abstract: A highly productive method for sealing substrates with the use of glass frit is provided. A method for sealing substrates with the use of glass frit, which can be used for a substrate provided with a material having low heat resistance, is provided. A highly airtight sealed body which is manufactured by such a method is provided. A light-emitting device having high productivity and high reliability and a manufacturing method thereof are provided. A heat generation layer containing a conductive material which generates heat by induction heating is formed to overlap with a region where a paste including a frit material and a binder is applied. Alternatively, a conductive material which generates heat by induction heating is added to the paste itself. The paste is locally heated by induction heating to remove the binder included in the paste.

Abstract: A thin-film transistor includes a structure for protecting an active layer, and an organic light-emitting display device including the thin-film transistor.

Abstract: The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram, moreover, the specific area fully encloses the Planck's locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.

Abstract: A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

Abstract: The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Abstract: A highly reliable light-emitting module including an organic EL element or a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. Alternatively, a method of manufacturing a highly reliable light-emitting module including an organic EL element, or a method of manufacturing a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. The light-emitting module has a structure in which a light-emitting element formed over a first substrate and a viscous material layer are sealed in a space between the first substrate and a second substrate which face each other, with a sealing material surrounding the light-emitting element. The viscous material layer is provided between the light-emitting element and the second substrate and includes a non-solid material and a drying agent which reacts with or adsorbs an impurity.

Abstract: A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.

Abstract: Provided is a method of manufacturing an organic electronic device, wherein an organic electronic device that controls the injection and mobility of carriers in an organic charge transport layer thereof is manufactured by laminating organic layers comprising the same charge transportable organic compound, when manufacturing the organic electronic device with the coating method.

Abstract: An organic light-emitting device includes a substrate, an anode including Ag on the substrate, a transparent inorganic thin-film layer on the anode, the transparent inorganic thin-film layer being in contact with the anode and having non-conductive characteristics; and an emitting layer and a cathode disposed sequentially on the inorganic thin-film layer.

Abstract: An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.

Abstract: A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R1, R3, R5 and R7 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R2, R4, R6 and R8 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.

Abstract: An organic light emitting display apparatus and method of manufacturing the same to improve an image quality of the organic light emitting display apparatus. The organic light emitting display apparatus includes: a first electrode formed on a substrate; an intermediate layer disposed on the first electrode, the intermediate layer having an organic emission layer; and a second electrode formed on the intermediate layer, wherein the first electrode includes an etching unit facing the intermediate layer.

Abstract: A sheet for use in a light-emitting device including layers including a light-emitting layer was invented. The sheet includes: a first layer including a plurality of projecting portions; and a second layer on the first layer, in which the projecting portions each include at least two steps, the second layer is formed on top at least surfaces of the steps, and when an effective refractive index of the first layer is n1, an effective refractive index of the second layer is n2, and an effective refractive index of the air above the second layer is n0, a relationship n1>n2>n0 is satisfied.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: There is provided a backplane for an organic electronic device including a TFT substrate having a base substrate, a polysilicon layer, a gate dielectric layer, a gate electrode, an interlayer dielectric, and a data electrode; an insulating layer over the TFT substrate; a multiplicity of first openings in the insulating layer having a depth d1; a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings; and a bank structure defining pixel areas over the diode electrode structures; wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas.

Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: To provide a light-emitting element, a light-emitting device, and an electronic device each formed using the organometallic complex represented by General Formula (G1) as a guest material and a low molecule compound as a host material.

Abstract: To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound.

Abstract: An organic light-emitting display device preventing edge defects between a pixel define layer and a pixel electrode, and a method of manufacturing the same. The organic light-emitting display device, comprises: a substrate; a pixel electrode disposed on the substrate and comprising a first patterned unit and a second patterned unit which are electrically disconnected; a pixel define unit disposed on the substrate and exposing the pixel electrode; an intermediate layer disposed on the pixel electrode and emitting light; and a counter electrode disposed on the intermediate layer and the pixel define layer.

Abstract: The present invention relates to light-emitting devices and in particular organic light-emitting devices (OLEDs). In particular, the invention relates to emitter materials in which charged metal complexes are bonded to a polymer by electrostatic interactions.

Abstract: The present invention relates to an organic light-emitting device capable of suppressing deterioration of organic EL elements at the corners of an emission region. The organic light-emitting device includes a planarization film which planarizes thin film transistors arranged in an emission region where pixels are arranged, an element separation film which defines the pixels formed on the planarization film, a charge transport layer formed on the planarization film in each pixel. The charge transport layer contains any one of alkali metals and alkaline-earth metals and extends to outside of the emission region so as to cover the side surface of a peripheral portion of the planarization film, which is disposed in a peripheral region, the planarization film being formed in the emission region.

Abstract: Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2. Application to 3D mapping and imaging.

Abstract: An OLED device includes: a TFT including an active layer, gate, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the source and drain electrodes, a pixel electrode on the first and second insulating layers, connected to one of the source and drain electrodes, a capacitor including a first electrode on the same layer as the active layer, a second electrode on the same layer as the gate electrode, and a third electrode formed of the same material as the pixel electrode, a third insulating layer between the second insulating layer and the pixel electrode and between the second and third electrodes, a fourth insulating layer covering the source, drain and third electrodes, exposing a portion of the pixel electrode, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.

Abstract: The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs.

Abstract: An organic opto-electric device has a layer stack with a base electrode, an organic layer assembly, a cover electrode and a contact layer. The organic layer assembly is arranged between the base electrode and the cover electrode and the cover electrode is arranged between the organic layer assembly and the contact layer. The cover electrode and the base electrode are structured to form several laterally adjacent optically active areas and the base electrode, the organic layer assembly, the cover electrode and the contact layer are interconnected by vias such that at least two optically active areas are connected in series so that a current flow through the at least two optically active areas passes in a direction between the base electrode and a cover electrode. The current flow between the at least two optically active areas passes through the contact layer, wherein the contact layer contacts the base electrode above one of the vias laterally in the interior of the two optically active areas.

Abstract: A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.

Abstract: A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.

Abstract: The present invention relates to an organic electroluminescence element which comprises an anode, a luminescent layer, two or more electron transport layers and a cathode, in this order, wherein at least one of the two or more electron transport layers adjoins the luminescent layer, the luminescent layer contains a luminescent material and a charge transport material, the electron transport layer which adjoins the luminescent layer contains a charge transport material, the charge transport material contained in the luminescent layer and the charge transport material contained in the electron transport layer which adjoins the luminescent layer may be the same material or may be different material, and the specific electron affinities EA1, EA2 and EA3, and the specific work function WF satisfy the specific relationship.

Abstract: A method includes forming a light absorbing layer, and forming a foundation layer before forming a lens portion such that the foundation layer covers a region where the lens portion is to be formed, wherein the foundation layer is in contact with the light absorbing layer and the lens portion once the lens portion is formed.

Abstract: A display unit with which lowering of long-term reliability of a transistor is decreased is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity.

Abstract: The invention provides an organic light-emitting diode which includes at least two electroluminescent layers (ELR, ELB), both of which are fluorescent or phosphorescent and emit at different wavelengths, as well as a hole- and electron-conducting buffer layer (T) arranged between the electroluminescent layers. The buffer layer is a bi-layer having an electron-transport layer (T2) and a hole-transport layer (T1), each one of the hole- and electron-transport layers being made of one or more materials in which the HOMO level(s) are comprised between or equal to the HOMO levels of the electroluminescent layers, and in which the LUMO levels are between or equal to the LUMO levels of said electroluminescent layers, with a tolerance of 0.3 eV.

Abstract: Provided is a light-emitting element having light emitting sections (17) that are distributed on a transparent substrate (11). Specifically, an electroluminescence element (10) includes the substrate having a bored part (16b) which is formed by recessing, below the light emitting sections, the surface of the substrate on a light emitting section side. By this configuration, the light-emitting element has a high light-emitting efficiency and exhibits required light distribution characteristics by controlling a direction of emitted light.

Abstract: An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied molecular orbital of the first dopant is higher than an energy level of a lowest unoccupied molecular orbital of the first host; a first electron transporting layer on the first emitting material layer; and a second electrode on the first electron transporting layer, wherein an energy level of each of the first hole transporting layer and the first electron transporting layer is higher than an energy level of a triplet state exciton of the first emitting material layer.

Abstract: An organic electroluminescent display device includes a first substrate including a display region including a plurality of pixel regions; a first electrode in each pixel region; an organic light emitting layer on the first electrode; a second electrode on the organic light emitting layer and in the display region, wherein the second electrode includes a first metal material having a first wt %, a first work function, and a first sheet resistance, and a second metal material having a second wt % less than the first wt %, a second work function less than the first work function, and a second sheet resistance greater than the first sheet resistance.

Abstract: Provided is an organic EL display panel that improves aperture ratio by providing a contact hole beneath an aperture in a bank, and that prevents shortening of the display panel's lifetime by avoiding electric field concentration. An organic EL display panel includes a TFT layer; an interlayer insulation film on the TFT layer and having a plurality of contact holes one per pixel; a plurality of first electrodes, one per pixel, on the interlayer insulation film; a bank defining a plurality of apertures, at least one per pixel, and at least one contact hole is located beneath each aperture; a plurality of organic light-emitting layers each in an aperture; and a second electrode above the organic light-emitting layers. In each aperture, a thickness of the organic light-emitting layer is greater at a portion within the contact hole region than at a portion outside the contact hole region.

Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

Abstract: An organic light-emitting display apparatus includes a light-shielding layer formed on a pixel defining layer to prevent external light or internal light from entering an active layer of a thin-film transistor (TFT), thus improving the stability of the active layer, and a method of manufacturing the organic light-emitting display apparatus.

Abstract: A display includes: a first light-emitting device disposed in a first region on a substrate and including a transfer organic layer; a second light-emitting device disposed in a second region adjacent to the first region on the substrate and not including a transfer organic layer; and a level difference provided between the first region and the second region, and being large enough to inhibit transfer of the transfer organic layer to the second region when the transfer organic layer is formed in the first region.

Abstract: The surface light emitting device includes an organic EL element, a protection substrate, a protection part, and a light extraction structure part. The element has a first face and a second face opposite to the first face, and emits light from the first face. The substrate has transparency for light emitted from the element, and is placed facing the first face, and has a primary surface facing the first face of the element. The protection part is placed facing the second face of the element, and constitutes a housing in combination with the substrate and accommodates the element so as to protect the element from water. The structure part is interposed between the first face of the element and the substrate, and suppresses reflection of light emitted from the element on at least one of the first face of the element and the primary surface of the substrate.

Abstract: An organic light emitting diode (OLED) display with improved long range uniformity is disclosed. The OLED display includes an OLED, a first transistor for transmitting a data signal of a voltage level in response to a current scan signal, a second transistor for generating a driving current of the OLED according to the data signal of the voltage level transmitted by the first transistor, a first capacitor for storing the data signal of the voltage level transmitted to the second transistor, and a second capacitor for shielding parasitic capacitor between a gate electrode of the second transistor and a cathode of the OLED.

Abstract: An organic light-emitting display device includes: a buffer layer including sequentially stacked materials having different refractive indexes on a substrate; source and drain electrodes on the buffer layer; a first active layer of a thin film transistor between the source and drain electrodes, and a second active layer spaced from the first active layer at a same layer as and including a same material as the first active layer; a first insulation layer on the buffer layer, the source and drain electrodes, the first and second active layers, and including sequentially stacked materials having different refractive indexes; a first gate electrode corresponding to a center region of the first and second active layers with the first insulation layer therebetween, and a pixel electrode at a same layer as and comprising a same material as the first gate electrode; and a second gate electrode on the first gate electrode.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns.

Abstract: An organic EL display device (1) includes an element substrate (30), a sealing substrate (20) facing the element substrate (30), an organic EL element (4) provided on the element substrate (30) and between the element substrate (30) and the sealing substrate (20), a first sealing member (5) made of fritted glass and provided between the element substrate (30) and the sealing substrate (20), and configured to weld the element substrate (30) and the sealing substrate (20) to seal the organic EL element (4), a resin member (14) provided between the sealing substrate (20) and the organic EL element (4) and configured to cover a surface of the organic EL element (4), and a second sealing member (16) formed of a resin and provided between the element substrate (30) and the sealing substrate (20).