Abstract: The invention relates to a thermocompensated resonator comprising a body used in deformation, the core of the body being formed by a first material. According to the invention, at least one part of the body comprises at least one coating made of shape-memory metal, the variations in the Young's modulus of which as a function of the temperature (CTE) are of opposite sign to those (CTE) of the first material used for the core so as to allow said resonator to have a frequency variation as a function of the temperature which is substantially zero at least to the first order (?, ?).

Abstract: A piezoelectric resonating element includes a piezoelectric substrate having a rectangular vibrating portion and a thick-walled portion, excitation electrodes and, and lead electrodes. The thick-walled portion includes a fourth thick-walled portion, a third thick-walled portion, a first thick-walled portion, and a second thick-walled portion. The third thick-walled portion includes a third slope portion and a third thick-walled body, and at least one slit is formed in the third thick-walled portion.

Abstract: An acoustic resonator structure includes an acoustic reflector over a cavity formed in a substrate, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. The acoustic resonator further includes a bottom electrode on the layer of low acoustic impedance material, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a collar formed outside a main membrane region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode. The collar has an inner edge substantially aligned with a boundary of or overlapping the main membrane region. The layer of the low acoustic impedance material includes a temperature compensating material having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the bottom electrode and the top electrode.

Abstract: A piezoelectric device has a plate-shaped substrate, a first frame defining a first concave portion at one surface of the substrate, a second frame defining a second concave portion at the other surface of the substrate, a first electrode member provided at one surface of the substrate, a second electrode member provided at the other surface of the substrate, a piezoelectric unit in which a first electrode section of the piezoelectric vibration plate is fixed to the first electrode member by a conductive binder, a cover sealing the first concave portion, and a temperature detection unit in which a second electrode section of the thermistor element is fixed to the second electrode member by a conductive joining material.

Abstract: An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material.

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract: An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film.

Abstract: A motor having a first portion configured to turn in a forward direction, a second portion coaxially mirrors the first portion; and a central fan between the first and second portions, and forcing air through the portions. A thermoelectric cooler element, thermally coupled to the portion is configured to cool the motor. A motor controller is electrically coupled to the first and second portions, and operates a portion in response to a condition sensed by the motor controller. The condition sensed by the motor controller is a motor torque, a motor speed, a motor casing temperature, or a zoned motor casing temperature. A method includes detecting a motor operational command; selecting a motor operational state using motor portion responsive to the motor command; sensing a heating state of a motor portion; and providing a cooling state to the motor portion responsive to the heating state.

Abstract: A temperature-compensated resonator includes a body used in deformation, wherein the core (58, 58?, 18) of the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) is formed from a plate formed at a cut angle (??) in a quartz crystal determining the first and second orders temperature coefficients (?, ?, ??, ??). According to the invention, the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) includes a coating (52, 54, 56, 52?, 54?, 56?, 16) deposited at least partially on the core (58, 58?, 18) and having first and second orders Young's modulus variations (CTE1, CTE2, CTE1?, CTE2?) according to temperature of opposite signs respectively to the first and second orders temperature coefficients (?, ?, ??, ??) of the resonator so as to render compensated first and second orders temperature coefficients substantially zero.

Abstract: A temperature compensated bulk acoustic wave (BAW) resonator device has low trim sensitivity for providing an accurate resonant frequency. The BAW resonator device includes a first electrode deposited on a substrate, a piezoelectric layer deposited on the first electrode, a second electrode deposited on the piezoelectric layer, and a mirror pair deposited on the second electrode. At least one of the first electrode and the second electrode includes an electrode layer, and a temperature compensating layer configured to compensate for a temperature coefficient of at least the piezoelectric layer.

Abstract: An actuator includes: a diaphragm having a thickness equal to or greater than 0.5 ?m and equal to or less than 20 ?m; a piezoelectric body layer which is provided on a first surface side of the diaphragm, and receives stress from the diaphragm; a pair of electrodes which is provided on the first surface side of the diaphragm together with the piezoelectric body layer, and is mutually opposing via the piezoelectric body layer; and a stress adjusting layer which is provided on a second surface side of the diaphragm on an opposite side to the first surface of the diaphragm, and receives stress from the diaphragm in a same direction as the stress that the piezoelectric body layer receives from the diaphragm.

Abstract: A piezoelectric vibrating device comprises a metallic containing member, a piezoelectric member and a heat dissipating and conducting member. The piezoelectric member is provided within the metallic containing member, and the heat dissipating and conducting member includes a plurality of the heat dissipating and conducting fins. Each the heat dissipating and conducting fin has a first heat conduction connecting end and a second heat conduction connecting end, wherein the first heat conduction connecting end is provided on an external surface of the piezoelectric member, and the second heat conduction connecting end is connected with an inner wall surface of the metallic containing member.

Abstract: An ultrasonic transducer for use in a fluid medium includes at least one piezoelectric transducer element, at least one matching body for the promotion of a vibrational coupling between the piezoelectric transducer element and the fluid medium, and at least one compensating body situated between the piezoelectric transducer element and the matching body for the reduction of thermal stresses, the compensating body having a coefficient of thermal expansion that is between a coefficient of thermal expansion of the piezoelectric transducer element and a coefficient of thermal expansion of the matching body.

Abstract: Multi-port devices having multiple electrical ports are described, as are related methods. Some of the multi-port devices may have two input ports and two output ports, and may be driven differentially, in a single-ended mode, in a single-ended to differential mode, or in a differential to single-ended mode. The multi-port devices may include one or more transducers coupled to the electrical ports.

Abstract: A piezoelectric sensing device is described for measuring material thickness of targets such as pipes, tubes, and other conduits that carry fluids. The piezoelectric sensing device includes a piezoelectric element mounted to a flexible circuit with glass reinforced polyimide C-stage cover layers surrounding a pure polyimide C-stage core.

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract: A temperature-compensated oscillator includes a temperature compensation circuit adapted to output a temperature compensation voltage, a voltage-controlled oscillation circuit on which temperature compensation is performed based on the temperature compensation voltage, a switch circuit adapted to perform ON/OFF control on power supply to the temperature compensation circuit, and a sample-and-hold circuit adapted to perform switching control between an ON state of outputting the temperature compensation voltage to the voltage-controlled oscillation circuit while being connected to the temperature compensation circuit and holding the temperature compensation voltage output from the temperature compensation circuit when the power is supplied to the temperature compensation circuit, and an OFF state of outputting the temperature compensation voltage held to the voltage-controlled oscillation circuit while cutting connection to the temperature compensation circuit when the power supply to the temperature compensat

Abstract: One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.

Abstract: The disclosure pertains to a device and a method for compensating for heat expansion effects in solid materials, as well as a method for manufacturing the device.

Abstract: The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.

Abstract: A microelectromechanical resonator includes a resonator body anchored to a substrate by at least a pair of tethers that suspend the resonator body opposite an underlying opening in the substrate. A first thermally-actuated tuning beam is provided, which is mechanically coupled to a first portion of the resonator body that is spaced apart from the pair of tethers. The first thermally-actuated tuning beam is configured to induce a mechanical stress in the resonator body by establishing a thermal expansion difference between the first thermally-actuated tuning beam and the resonator body in response to a passing of current through the first thermally-actuated tuning beam.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Abstract: A piezoelectric generator includes: a base body; and at least one piezoelectric transducer disposed on the base body, and including a first electrode, a piezoelectric body, and a second electrode, wherein the piezoelectric transducer includes a support section fixed to the base body, and a vibrating section disposed apart from the base body, having one end connected to the support section and the other end set as a free end, and vibrating due to a vibration applied externally, and a distance between the other end of the vibrating section and the base body is larger than a distance between the one end of the vibrating section and the base body.

Abstract: The present invention relates to an ultrasonic probe provided with a piezoelectric element for ultrasonic generation that has drive electrodes formed on two main surfaces thereof; an acoustic matching layer formed on the first main surface side of the piezoelectric element; a backing member attached to the second main surface side of the piezoelectric element; a base for heat dissipation provided on a lower surface of the backing member; and a thin metal plate for heat transfer that is thermally bonded between at least one of the main surfaces of the piezoelectric element and the base for heat dissipation; wherein the thin metal plate for heat transfer is surface-bonded to extend from one end of the piezoelectric element over the center thereof toward the other end. This configuration ensures that heat generated by the electrical-mechanical conversion of the piezoelectric element is transferred away in a satisfactory manner, enabling suppression of any temperature rise in the piezoelectric element.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: An ultrasonic transducer for an ultrasonic, flow measuring device comprising an electromechanical transducer element and an ultrasound window, wherein an adapting, or matching, layer liquid at operating conditions of the ultrasonic transducer is arranged between the electromechanical transducer element and the ultrasound window, wherein the ultrasonic transducer has holding means, which exert a releasable force toward the ultrasound window on the electromechanical transducer element, in order to hold the electromechanical transducer element in a predetermined position relative to the ultrasound window.

Abstract: A vibration device includes a semiconductor device, a first electrode and a second electrode located in a first surface of the semiconductor device, a vibration element, a third electrode and a fourth electrode located in a first surface of the vibration element, a first connection section that connects the first electrode and the third electrode, and a second connection section that connects the second electrode and the fourth electrode. The semiconductor device and the vibration element have mutually different thermal expansion coefficients. The vibration element has a coupling section located between the third electrode and the fourth electrode, and the coupling section has at least one bend section located between the third electrode and the fourth electrode.

Abstract: A method for forming a resonator including a resonant element, the resonant element being at least partly formed of a body at least partly formed of a first conductive material, the body including open cavities, this method including the steps of measuring the resonator frequency; and at least partially filling said cavities.

Abstract: A drive unit includes an ultrasonic actuator having an actuator body formed using a piezoelectric element, and a driving element provided on the actuator body and configured to output a driving force by moving according to the vibration of the actuator body, and a control section configured to induce the vibration in the actuator body by applying a first and a second AC voltages having a same frequency and different phases to the piezoelectric element. The control section adjusts the first AC voltage and the second AC voltage so that the first AC voltage and the second AC voltage have different voltage values from each other.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Abstract: An oscillatory wave motor includes an oscillator having an oscillation body and an electro-mechanical energy-converting element, and a flexible heat-conducting member configured to dissipate heat generated by the oscillatory wave motor. The oscillatory wave motor drives a moving body in contact with a contact portion formed in the oscillation body by an elliptical movement of the oscillator, and the heat-conducting member is provided in addition to a heat-conducting path that conducts heat generated by the oscillatory wave motor through an oscillator supporting member that supports the oscillator or a heat-conducting path that conducts heat through the moving body.

Abstract: A multilayer piezoelectric element includes a plurality of piezoelectric layers and a plurality of metal layers stacked alternately. The plurality of metal layers include a plurality of low-filled metal layers having a lower filling rate of metal composing the metal layers than oppositely disposed metal layers adjacent to each other in a stacking direction. The plurality of metal layers may include a plurality of thin metal layers having a smaller thickness than oppositely disposed metal layers adjacent to each other in a stacking direction. Where the plurality of metal layers are composed mainly of an alloy, the plurality of metal layers may include a plurality of high-ratio metal layers having a higher ratio of a component constituting the alloy than oppositely disposed metal layers adjacent to each other in a stacking direction.

Abstract: The present invention provides a fuel injector, comprising a housing having a sealable injector seat; a fuel injector pin disposed within the housing proximate to the injector seat such that the injector seat may be sealed and unsealed by displacing the fuel injector pin; a resilient element biasing the fuel injector pin in an unsealed direction; a piezoelectric actuator disposed within the housing proximal to the fuel injector pin configured to actuate to force the injector pin towards the injector seat to seal the injector seat; and a thermal compensating unit disposed within the housing proximal to the actuator and configured to compensate for thermal expansion or contraction of a component of the fuel injector.

Abstract: There is provided an ultrasonic sensor including: a piezoelectric vibration element; and a capacitor integrally formed with the piezoelectric vibration element.

Abstract: An ultrasound transducer element includes a piezoelectric layer, a front end body, and a backing layer assembly. The piezoelectric layer extends between opposite front and back sides and is configured to transmit acoustic waves from the front side. The front end is body disposed proximate to the front side of the piezoelectric layer and is configured to emit the acoustic waves out of a housing. The backing layer assembly is disposed proximate to the back side of the piezoelectric layer. The backing layer assembly includes a first thermally conductive mesh disposed in a matrix enclosure. The first thermally conductive mesh is positioned to conduct thermal energy away from the piezoelectric layer. In one aspect, the first thermally conductive mesh is a grid of elongated strands of a metal or metal alloy material oriented in at least one of transverse or oblique directions.

Abstract: An oven controlled crystal oscillator includes a thermostatic bath, an inner circuit board, an outer circuit board, a heating element, and a temperature sensor. The inner circuit board comprising a crystal oscillation circuit is positioned inside the thermostatic bath and electrically connected with the outer circuit board via a pin. The outer circuit board has a temperature control circuit and a power supply circuit. The heating element and the temperature sensor electrically connect with the outer circuit board. A through slot is formed through the outer circuit board, and the thermostatic bath is inserted into the through slot. By inserting the thermostatic bath into the through slot of the outer circuit board, the height and the weight of the oven controlled crystal oscillator are reduced, the electric connection performance is enhanced, and thus the stability of the output frequency of the oven controlled crystal oscillator is improved.

Abstract: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: A micromechanical resonator is passively compensated to reduce the value of the temperature coefficient of frequency (TCF). The resonator may be part of a MEMS device and includes temperature compensating material encapsulated within the resonator between a resonator body and a capping layer. The compensating material has a TCE that is opposite to that of the resonator body material. One material has a positive TCE and the other material has a negative TCE. The compensating material can be located at or near high strain regions of the resonator to help minimize the amount of compensating material necessary to bring the TCF of the resonator close to zero. The compensating material can also be located in trenches formed only partially through the resonator body, thus allowing the resonator to be released from a substrate using wet release methods without etching away any of the compensating material.

Abstract: A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.

Abstract: An acoustic wave device includes: an electrode that excites an acoustic wave and is located on a substrate; and a silicon oxide film that is located so as to cover the electrode and is doped with an element or molecule displacing O in a Si—O bond, wherein the element or molecule is F, H, CH3, CH2, Cl, C, N, P, or S.

Abstract: A composite substrate is provided, including a piezoelectric substrate which is capable of transmitting an elastic wave, and a support substrate, which has a smaller thermal expansion coefficient than that of the piezoelectric substrate, bonded to each other. The in-plane maximum thermal strain amount, which is the largest thermal strain amount in the plane of the composite substrate, has a minimum value and a maximum value when the piezoelectric substrate and the support substrate are relatively rotated 0° to 360°, and the piezoelectric substrate and the support substrate are bonded to each other so that the in-plane maximum thermal strain amount has the minimum value or a value in the vicinity thereof.

Abstract: Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

Abstract: A flexural vibration piece includes a flexural vibrator that has a first region on which a compressive stress or a tensile stress acts due to vibration and a second region having a relationship in which a tensile stress acts thereon when a compressive stress acts on the first region and a compressive stress acts thereon when a tensile stress acts on the first region, and performs flexural vibration in a first plane. The flexural vibration piece also includes a heat conduction path, in the vicinity of the first region and the second region, that is formed of a material having a thermal conductivity higher than that of the flexural vibrator and thermally connects between the first region and the second region.

Abstract: An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.

Abstract: An acoustic wave device includes: a substrate; a lower electrode that is located on the substrate; a piezoelectric film that is located on the lower electrode and made of aluminum nitride of which a ratio of a lattice constant in a c-axis direction to a lattice constant in an a-axis direction is smaller than 1.6; and an upper electrode that is located on the piezoelectric film and faces the lower electrode across the piezoelectric film.

Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.