Abstract: A piezoelectric drive device includes two vibrators having vibrating portions with piezoelectric elements and transmitting portions placed in the vibrating portions and transmitting drive forces to a driven member (e.g. a slider), and a fixing portion having through holes (first through hole, second through hole) into which pins or screws are inserted. The two vibrators are placed adjoiningly along a drive direction of the slider, and the fixing portion is placed between the two vibrators and fixing the two vibrators.

Abstract: A piezoelectric microelectromechanical systems microphone can be mounted on a printed circuit board. The microphone can include a substrate with an opening between a bottom end of the substrate and a top end of the substrate. The microphone can include a single piezoelectric film layer disposed over the top end of the substrate and defining a diaphragm structure, the single piezoelectric film layer being substantially flat with substantially zero residual stress and formed from a piezoelectric wafer. The microphone can include one or more electrodes disposed over the diaphragm structure. The diaphragm structure is configured to deflect when subjected to sound pressure via the opening in the substrate.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Abstract: A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.

Abstract: An acoustic wave device includes an IDT electrode provided on a piezoelectric substrate. The IDT electrode includes a crossing area including a central area, and first and second low-acoustic-velocity areas on both sides in a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction. First and second high-acoustic-velocity areas are provided outside the first and second low-acoustic-velocity areas. Mass adding films are laminated in respective portions of first and second electrode fingers, the respective portions being positioned in the first and second low-acoustic-velocity areas. In at least one of the mass adding films, a width of a first end portion and a width of a second end portion are narrower than a width of a central portion, and a protruding portion protrudes from at least one of the first and second end portions.

Abstract: A wind power generation system including a power generation unit having an elastically deformable base material in a shape of a longitudinal flat plate and a piezoelectric element disposed on the base material, and which generates electricity as the power generation unit is vibrated; the piezoelectric element is repeatedly bent and deformed by the vibration and stacked on the base material, the wind power generation system being configured to include a tension adjusting device that, when a wind speed is increased, moves the movable member to increase a tensile force that pulls the power generation unit in the longitudinal direction, and the tension adjusting device being a lift generating member that is formed integrally with the movable member so as to be extended and to have wing shape to both sides of the movable member and that moves the movable member based on lift generated according to the wind speed.

Abstract: A second piezoelectric vibrator (30) is located in a hollow portion (21) of the first piezoelectric vibrator (20) when seen in a plan view. A support (40) is a frame-shaped member, and the inside surface thereof supports the edge of a vibration member (10). The fundamental resonance frequency of the first piezoelectric vibrator (20) is lower than the fundamental resonance frequency of the second piezoelectric vibrator (30). In addition, the second piezoelectric vibrator (30) overlaps a loop of vibration generated in the vibration member (10) when the first piezoelectric vibrator (20) is driven at the fundamental resonance frequency. Preferably, the center of the second piezoelectric vibrator (30) overlaps the center of a loop of vibration generated in the vibration member (10) by the first piezoelectric vibrator (20).

Abstract: A crystal oscillator and manufacturing method thereof are provided.

Abstract: An apparatus including: a brush holder; a radio frequency identification (RFID) device affixed to the brush holder, the RFID device including: a temperature sensor system for determining temperature(s) at one or more distinct locations on the brush holder; and a transmitter for providing indication of the temperature(s).

Abstract: A leadless package and method for manufacturing silicon based leadless QFN/SON compatible packages are described. In addition the package allows for hermetic sealing of devices while maintaining electrical and optical access. Micro-vias with feed-through metallization through a silicon structure facilitates a surface mount technology-compatible silicon package with bottom SMT pads and top surface device integration. Sloped edges on the SMT side enable solder filleting for post solder inspection. Hermetic seal can be attained for example using anodic bonding of a glass lid or using metal soldering. Metal soldering enables the use of solder bumps to provide electrical connections for the package to the lid with integrated device functionality used for sealing. Hermetically sealed silicon packages eliminates the need for an extra packaging layer required in plastic packages and provides a standard interface for enclosing one or more discrete devices.

Abstract: An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators.

Abstract: An exemplary piezoelectric device has a piezoelectric vibrating board including a portion that exhibits thickness-shear vibration, and a frame portion extending around and supporting the vibrating portion. A first cover board, bonded to the first main surface of the frame portion, has a first excitation electrode. A second cover board, bonded to the second main surface of the frame portion, has a second excitation electrode. Thus, the vibrating portion is sealed in a package formed by the frame portion and cover boards. A first convexity, defined either on the bonded main surface of the first cover board or on the first main surface of the frame portion, surrounds the excitation electrode and establishes a predetermined gap between the vibrating portion and excitation electrode. The first cover board and frame portion are bonded by adhesive applied, adjacent the first convexity but not on the first convexity, continuously around the vibrating portion.

Abstract: A quartz resonator flow cell has a piezoelectric quartz wafer with an electrode, pads, and interconnects disposed on a first side thereof. The piezoelectric quartz wafer has a second electrode disposed on a second side thereof, the second electrode opposing the first electrode. A substrate is provided having fluid ports therein and the piezoelectric quartz wafer is mounted to the substrate such that the second side thereof faces the substrate with a cavity being formed between the substrate and the wafer. The fluid ports in the substrate are aligned with the electrode on the second side of the piezoelectric quartz wafer which is in contact with the cavity.

Abstract: Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.

Abstract: A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.

Abstract: An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct can be configured as a solid mass or as parallel layers that can be on a nano-, micro-, and macro-scale. Its configuration can determine its behavior and functionality under a variety of conditions. Implementations of an architectural construct can include its use as a substrate, sacrificial construct, carrier, filter, sensor, additive, and catalyst for other molecules, compounds, and substances, or may also include a means to store energy and generate power.

Abstract: An object of the present invention is to economically manufacture a piezoelectric component having superior molding pressure resistance and reduced height.

Abstract: A method for forming a piezoelectric component includes forming a plurality of sets of first piezoelectric elements having comb-shaped electrodes and wiring electrodes on a principal surface of a piezoelectric substrate base material, forming a protective film, a seed layer, and terminal electrodes, and removing the seed layer by etching. The method further includes preparing another piezoelectric substrate and performing resin-sealing by laminating a photosensitive resin film onto a principal surface side of the piezoelectric substrate base material. Cu electroplating is performed upon the terminal electrodes, and the piezoelectric substrate base material is cut along dicing lines to obtain individual piezoelectric components. The piezoelectric component includes a first piezoelectric element and a plurality of second piezoelectric elements with the second piezoelectric elements sealed by a resin seal layer such that a hollow section is formed between opposing principal surfaces thereof.

Abstract: A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.

Abstract: In a particular embodiment, a system to dissipate heat in an information handling system includes a first heat-generating component adapted to process first data and a second heat-generating component adapted to process second data. The system also includes a cooling fluid guide including an electroactive material. The cooling fluid guide is adapted to change from a first shape to a second shape, in response to receiving a trigger voltage or in response to no longer receiving the trigger voltage. The system also includes a controller adapted to detect a data load processed at the second heat-generating component and, in response to detecting the data load, to cause the trigger voltage to be received at, or no longer received at, the cooling fluid guide. The cooling fluid guide is adapted to direct an increased portion of cooling fluid toward the first heat-generating component when the cooling fluid guide is in a form of the second shape, as compared to the first shape.

Abstract: Providing a piezoelectric vibrating reed which has low disconnection possibility and ensures reliability for stable operation without requiring strict exposure position accuracy.

Abstract: A piezoelectric speaker includes a cabinet, piezoelectric vibrators horizontally mounted inside the cabinet at different elevations each having two eyed lugs respectively coupled to respective posts in the cabinet, a shock absorber coupled to the piezoelectric material of the piezoelectric vibrators, two conducting terminals accommodated inside the cabinet and clamped on the piezoelectric vibrators, and two clamps fastened to the conducting terminals to secure a respective signal line.

Abstract: A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.

Abstract: A piezoelectric component with a piezoelectric element includes a piezoelectric substrate, at least one oscillating section formed on the piezoelectric substrate, and an element wiring section connected to the oscillating section. A side face side hollow section forming layer and a lid face side hollow section forming layer made of photosensitive resin surround the top face and side face of the oscillating section while forming a gap so as to provide a hollow section.

Abstract: A silicon substrate is trimmed in an area at the top and rear surfaces at the center, and a piezoelectric vibrator is disposed therein. As shown in a top view of FIG. 1, the piezoelectric vibrator is supported by a silicon peripheral portion provided on the peripheral portion including the left and right portions of the view having a large thickness, through two beams formed by removing silicon by a known method such as etching. This supported portion corresponds to a node portion. A film structure of the piezoelectric vibrator includes, in thickness directions of the piezoelectric vibrator from the top to the bottom, an Al electrode, a PZT thin film, a Pt underlying electrode, a Ti underlayer, and an SiO2 thin film. Thereby, the piezoelectric vibrator is supported by the beams integrated with the silicon peripheral portion, thus eliminating a mechanical connection and achieving a stable connection.

Abstract: A quartz crystal device includes: a quartz crystal blank having an outer perimeter part and a vibration region partially separated mechanically from the outer perimeter part by a cut-out groove; a first container joined to a first principal surface of the crystal blank by being joined to an entire perimeter of the perimeter part of the crystal blank via a brazing material layer in the first principal surface; and a second container joined to a second principal surface of the crystal blank by being joined to an entire perimeter of the outer perimeter part of the crystal blank via a brazing material layer in the second principal surface. The vibration region of the crystal blank is hermetically encapsulated in a space formed by the first container, the second container and the outer perimeter part of the crystal blank.

Abstract: A piezoelectric device includes: a lower substrate; an upper substrate; an intermediate substrate sandwiched between the lower substrate and the upper substrate, the intermediate substrate including: a piezoelectric vibrating portion; a frame surrounding a periphery of the piezoelectric vibrating portion; a connecting portion coupling the piezoelectric vibrating portion and the frame; a first exciting electrode disposed on an upper surface of the piezoelectric vibrating portion; a second exciting electrode disposed on a lower surface of the piezoelectric vibrating portion; a first wiring line electrically coupled to the first exciting electrode; and a second wiring line electrically coupled to the second exciting electrode; and an inside surface coupling an upper surface and a lower surface of the frame and having a slanted surface having an interior angle with respect to one of the upper surface and the lower surface, the angle being 90 degrees or more.

Abstract: A surface acoustic wave device includes a base portion that surrounds a surface acoustic wave element and is made of a resin, and a cap portion that is adhered onto the base portion so that a cavity sealing the surface acoustic wave element is formed, and is made of a resin. At least one of an adhering face of the base portion and an adhering face of the cap portion adhering the base portion and the cap portion is subjected to a grain finish or a dull finish. A convex portion is provided inside of the adhering face that is of one of the base portion and the cap portion adhered to the other.

Abstract: A piezoelectric filter comprises a substrate and a plurality of piezoelectric resonators provided on the same substrate. Each piezoelectric resonator comprises a cavity formed in the substrate, a lower electrode formed on the substrate, covering the cavity, a piezoelectric material layer formed on the lower electrode, and an upper electrode formed on the piezoelectric material layer. At least one of the piezoelectric resonators has a cavity formed of a plurality of cells.

Abstract: A vibrator module includes a frame having an outer frame and an inner frame. A vibrator unit is formed inside the inner frame. The frame and the vibrator unit are formed of a piezoelectric ceramic or the like as one piece. On one side of the vibrator unit, an IC is mounted so that a hollow portion is provided between the vibrator unit and the IC. The periphery of the IC is filled with a resin material. On the other side of the vibrator unit, a top cover serving as a sealing material is mounted so that a hollow portion is provided between the vibrator unit and the top cover.

Abstract: In order to improve the sound pressure level and the sound quality of a piezoelectric electroacoustic transducing device without impairing the size, the productivity, the cost, and the like of the device, the piezoelectric electroacoustic transducing device 1 has: a frame 20; a piezoelectric vibrator 10 in which piezoelectric elements 12, 13 are bonded to a metal plate 11; and a support member 30 which supports a peripheral portion of the piezoelectric vibrator 10 on the frame 20, and which is made of a resin film such as a ring-like PET resin, and a mesh or embossed concave and convex structure is formed on the surface of the support member 30. While maintaining the external shape of the support member 30, the support member 30 is provided with a flexibility at which a large displacement of the piezoelectric vibrator 10 is not impeded.

Abstract: A thin-film piezoelectric resonator has a piezoelectric film which is formed via a space on a substrate and is supported on the substrate at least one location, an upper electrode which has a plurality of electrode layers and a connection part connecting the electrode layers to each other, each of the electrode layers being formed on the piezoelectric film, having the same width and being arranged at the same interval as the width, a lower electrode formed under the piezoelectric film, a first pad which is formed on the substrate and is electrically connected to the upper electrode, and a second pad which is formed on the substrate and is electrically connected to the lower electrode.

Abstract: A surface mount crystal oscillator has a package body having a recess and formed with a step on an inner wall of the recess, a flat base plate having a peripheral region secured to the step, a crystal blank secured to the flat base plate, an IC chip having an oscillation circuit, using the crystal blank, integrated therein, and secured to a bottom surface of the recess, and a cover for closing the recess. The crystal blank is disposed above the IC chip within the recess, and the IC chip and the crystal blank are hermetically sealed within the recess.

Abstract: In a piezoelectric resonator, a portion of a thin film unit is supported by a substrate. A portion of the thin film unit acoustically isolated from the substrate includes a) a vibration unit and b) an additional film. The vibration unit includes a piezoelectric film sandwiched between a pair of electrodes. The piezoelectric film is overlapped with the pair of electrodes in plan view. The additional film is disposed on one of the piezoelectric film and the electrodes so as to extend along at least a portion of the periphery of the vibration unit. When x (MN·second/m3) denotes an acoustic impedance of the additional film defined by the square root of the product of the density and Young's modulus, A denotes the product of the density and the thickness of the additional film, B denotes the product of the densities and the thicknesses of the electrodes, and y=A/B, the following conditional expressions are satisfied: In the range of 9.0?x<44.0, 0.0092·x+0.88?y<0.067·x+0.60??(1a) In the range of 44.

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

Abstract: A bulk acoustic resonance and a method for fabricating the bulk acoustic resonator, the bulk acoustic resonator including: a substrate including an upper surface defining a predetermined area including a cavity; a resonance part positioned above the cavity and including a surface comprising a dimple; and an anchor part connecting the resonance part to the substrate. The resonance part includes: a lower electrode including a lower surface including a predetermined dimpled area and an upper surface opposite to the predetermined dimpled area; a piezoelectric layer stacked on the upper surface of the lower electrode; and an upper electrode stacked on the piezoelectric layer. Because direction of the vibration of the resonator is adjustable by adjusting position, area, and the number of the dimples, process freedom can be improved.

Abstract: A method of producing a surface acoustic wave device includes a sacrificial-layer forming step of forming a sacrificial layer on a piezoelectric substrate so as to cover comb electrodes and reflectors, a space-forming-member forming step of forming a space-forming member while openings are formed near the reflectors along a surface of the sacrificial layer, a sacrificial-layer removing step of removing the sacrificial layer from the openings of the space-forming member, and a resin sealing step of sealing a surface acoustic wave element with sealing resin, the surface acoustic wave element having an excitation protection space formed between the reflectors and the comb electrodes by the space-forming member.

Abstract: The microelectromechanical system (MEMS) element (101) comprises a first electrode (31) that is present on a surface of substrate (30) and a movable element (40). This overlies at least partially the first electrode (31) and comprises a piezoelectric actuator, which movable element (40) is movable towards and from the substrate (30) by application of an actuation voltage between a first and a second position, in which first position it is separated from the substrate (30) by a gap. Herein the piezoelectric actuator comprises a piezoelectric layer (25) that is on opposite surfaces provided with a second and a third electrode (21,22) respectively, said second electrode (21) facing the substrate (30) and said third electrode (22) forming an input electrode of the MEMS element (101), so that a current path through the MEMS element (101) comprises the piezoelectric layer (25) and the tunable gap.

Abstract: An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

Abstract: An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

Abstract: A hermetic package for electronic components which is made of metallic silicon is disclosed. The package includes a plurality of silicon elements which are bonded together. A metallic layer of platinum or gold is bonded to an internal surface of the hermetically sealed enclosure. While either metallic layer may serve as a heating element by subjecting the electronic circuit connected thereto with a large current, the platinum layer can also be used as a thermal sensor by passing a lower current there through. An internal heater is included to stabilize the performance of the electronic components.

Abstract: The specification discloses embodiments of an apparatus comprising a film bulk acoustic resonator (FBAR) filter comprising a piezoelectric membrane having a portion thereof sandwiched between a first electrode and a second electrode, the piezoelectric membrane being suspended from at least two edges thereof, and a heat transfer layer placed on the piezoelectric membrane surrounding, but not in contact with, the first electrode. Also disclosed are embodiments of a process comprising sandwiching a portion of the piezoelectric membrane between a first electrode and a second electrode, suspending a piezoelectric membrane from at least two edges thereof, and placing a heat transfer layer on the piezoelectric membrane surrounding, but not in contact with, the first electrode. Other embodiments are disclosed and claimed.

Abstract: A surface acoustic wave device includes a sealing resin for sealing a gap between a surface acoustic wave element and a mounting board. The sealing resin is prevented from flowing so as to reach a vibrating portion of the surface acoustic wave element. In the surface acoustic wave device, a surface acoustic wave element is connected to a mounting board through bumps, the outer peripheral edge of the surface acoustic wave element is sealed by a sealing resin, and a vibration space is secured between the vibrating portion of the surface acoustic wave element and mounting board. In the surface acoustic wave element, an outer barrier enclosing the bumps and the vibrating portion and an inner barrier enclosing the vibrating portion are provided, the height of the outer barrier is lower than the total height of the height of the bumps and the height of electrode lands formed on the mounting board, and the height of the inner barrier is lower than the height of the bumps.

Abstract: A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

Abstract: A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk acoustic resonator.

Abstract: The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient kt2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant frequencies, which can be formed on the same substrate without increasing number of lithography process. An internal cavity is provided in a semiconductor or insulative substrate such as crystal silicon. The thin film bulk acoustic wave resonator has a layered member comprising a first electrode film, a piezoelectric film and a second electrode film on a thin wall of e.g. single crystal over the internal cavity.

Abstract: A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.

Abstract: Disclosed are a film bulk acoustic resonator (FBAR) device and a method for fabricating the film bulk acoustic resonator (FBAR) device. The film bulk acoustic resonator (FBAR) device comprises a membrane layer having a plurality of active regions and provides different resonant frequencies by providing different thicknesses of the active regions of series resonators and shunt resonators, and by controlling the thicknesses, respectively. A plurality of the film bulk acoustic resonator (FBAR) devices having different resonant frequencies are manufactured on a substrate, thereby simultaneously manufacturing a transmission filter and a reception filter on the same substrate. Further, the film bulk acoustic resonator (FBAR) device has a stable structure and excellent characteristics.

Abstract: A piezoelectric actuator for actuating a mechanical component includes a piezoelectric element, for subjecting an actuating element to a tensile force or compressive force, and a compensating element, with the piezoelectric element and the compensating element having essentially the same coefficients of temperature expansion. The compensating element is mechanically coupled to the piezoelectric element in such a way that the temperature-caused expansions of the piezoelectric element and of the compensating element cancel one another out in the effective direction in such a way that the actuating element remains in its position.