Abstract: A Lamb-wave resonator includes: a piezoelectric substrate; an interdigital transducer electrode formed on a main surface of the piezoelectric substrate, the interdigital transducer electrode including a plurality of electrode finger elements being interdigitated, and a bus bar electrode coupling the plurality of electrode finger elements; and a pair of reflectors disposed on opposite sides of the interdigital transducer electrode in a propagation direction of a Lamb wave. A thickness t of the piezoelectric substrate is in a range expressed by 0<t/??3 where a wavelength of the Lamb wave to be excited is represented as ?. If a width of the bus bar electrode is Wb, a distance from the electrode finger elements to the bus bar electrode is Wg, in an orthogonal coordinate with an x axis indicating the distance Wg and a y axis indicating the width Wb, both the distance Wg and the width Wb are in one of a first range and a second range.

Abstract: A quartz crystal resonator element includes an AT-cut quartz crystal substrate, the substrate having edges parallel to each of a Z? axis obtained by rotating a Z? axis in a range of ?120° to +60° about a Y? axis and an X? axis perpendicular to the Z? axis when an angle formed by rotating a +Z? axis in a direction of a +X axis about the Y? axis is a positive rotation angle; a thin section that forms a resonating section; and a thick section adjacent to the resonating section, the thin section and the thick section being formed on the quartz crystal substrate by wet etching. The thin section is formed either on a main surface of the substrate corresponding to a +Y?-axis side or on a main surface of the substrate corresponding to a ?Y?-axis side.

Abstract: An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle ? of a rotary Y cut quartz substrate is set in a range of ?64.0°<?<?49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. An electrode film thickness H/? standardized by a wavelength of the IDT electrode is 0.04<H/?<0.12, where ? is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 ?m or more.

Abstract: A method for producing a tuning-fork type crystal vibrating piece relates to a crystal tuning fork comprising a basal portion, a first vibrating arm, and a second vibrating arm, wherein both arms extend from the basal portion. The method for producing a crystal tuning fork comprises a step of forming a first metallic film into a shape including the contours of the basal portion, the first vibrating arm and second vibrating arm on a first surface of a quartz wafer; a step of forming a second metallic film on the second surface opposite to the first surface of the quartz wafer into a shape covering at least a root area near the basal portion between the first vibrating arm and the second vibrating arm, and a step of wet-etching the quartz substrate in etching solution after forming the first and second metallic films.

Abstract: A quartz crystal unit comprises a quartz crystal tuning fork resonator capable of vibrating in a flexural mode of an inverse phase and having at least one groove having at least one stepped portion formed in at least one of opposite main surfaces of each of first and second quartz crystal tuning fork tines. An electrode is disposed on the at least one stepped portion of the at least one groove so that the electrode of the first quartz crystal tuning fork tine has an electrical polarity opposite to an electrical polarity of the electrode of the second quartz crystal tuning fork tine. The quartz crystal unit comprising the quartz crystal tuning fork resonator has a capacitance ratio r1 of a fundamental mode of vibration less than a capacitance ratio r2 of a second overtone mode of vibration.

Abstract: A MEMS structure having a stress-inducer temperature-compensated resonator member is described. The MEMS structure includes a frame disposed above a substrate. The frame has an inner surface and an outer surface and is composed of a first material having a first coefficient of thermal expansion (CTE) and a second material having a second CTE, different from the first CTE. A resonator member is coupled to the inner surface of the frame.

Abstract: An AT cut quartz crystal resonator element includes a quartz crystal element piece having an exciting part formed from an AT cut quartz crystal plate in a rectangular shape having an X-axis direction of a quartz crystal set to a long side, and an exciting electrode formed on each of front and back main surfaces of the exciting part, in which each side surface in the longitudinal direction of the exciting part is composed of two faces, an m-face of a quartz crystal and a crystal face other than the m-face.

Abstract: A crystal element has a crystal blank which is cut from a crystal of quartz and has a principal plane orthogonal to a Y?-axis, where the Y- and Z-axes are rotated by an angle of ? around the X-axis in the crystal to be designated as the Y?- and Z?-axes, and the X- and Y?-axes are rotated by an angle of ? around the Z?-axis to be designated as the X?- and Y?-axes. The crystal blank has mutually orthogonal two null stress-sensitivity axes. In the crystal blank, the thickness of the center part at which two null stress-sensitivity axes intersect is increased, and a ridge line portion defining a quadrangular pyramid like shape from the center part toward the outer peripheral part is formed. The sectional thickness of the crystal blank along the base thereof is larger in the central region and becomes gradually smaller toward both ends.

Abstract: A contour resonator at least includes a first vibrating substrate and a second vibrating substrate having main surfaces that face each other and are bonded. The contour resonator includes a first excitation electrode provided on a front main surface of the first vibrating substrate, a second excitation electrode provided on a back main surface of the second vibrating substrate, and a common intermediate excitation electrode provided at an interface between the first vibrating substrate and the second vibrating substrate. The first excitation electrode and the second excitation electrode are electrically connected to constitute a first terminal. The intermediate excitation electrode constitutes a second terminal. The first vibrating substrate and the second vibrating substrate perform a contour vibration in accordance with an excitation signal applied between the first terminal and the second terminal.

Abstract: An oscillator having a quartz resonator, and a base wafer containing active electronics, wherein the quartz resonator is bonded directly to the base wafer and subsequently hermetically capped.

Abstract: A resonant-oscillating-device fabrication method for integrally forming a structure comprising a support, a beam vibratably extending from the support, and an oscillating element which is supported by the beam so as to oscillate in resonance with the vibration of the beam at a desired resonant frequency, by using a substrate. The resonant-oscillating-device fabrication method having a thickness measurement step of measuring the thickness of the substrate, an etching condition determination step of determining conditions of etching a portion forming the beam in the substrate to provide the desired resonant frequency, in accordance with the thickness of the substrate measured in the thickness measurement step, and an etching step of etching the substrate in accordance with the etching conditions.

Abstract: A quartz crystal device includes: a quartz crystal blank having an outer perimeter part and a vibration region partially separated mechanically from the outer perimeter part by a cut-out groove; a first container joined to a first principal surface of the crystal blank by being joined to an entire perimeter of the perimeter part of the crystal blank via a brazing material layer in the first principal surface; and a second container joined to a second principal surface of the crystal blank by being joined to an entire perimeter of the outer perimeter part of the crystal blank via a brazing material layer in the second principal surface. The vibration region of the crystal blank is hermetically encapsulated in a space formed by the first container, the second container and the outer perimeter part of the crystal blank.

Abstract: An electroacoustic component includes a substrate that includes a quartz single crystal. The quartz single crystal has a first Euler angle ?: ?5°???5°, a second Euler angle ?, and a third Euler angle ?. A contiguous region of the quartz single crystal has the following vertices Pi(?i, ?i): (23°, 20°), (60°, 17°), (110°, 30°), (105°, 42°), (60°, 30°), (23°, 25°).

Abstract: The outer shape of a quartz crystal blank is processed to have a predetermined shape, thereby providing an SC cut crystal resonator capable of reliably and reproducibly suppressing B mode resonance. In this SC cut crystal resonator, the surface of the quartz crystal orthogonal to the Y axis is rotated through 33° to 35° about the X axis and is then rotated from this rotated position through 22° to 24° about the Z axis, and a slender quartz crystal blank oblong in an X? axis direction is cut from the rotated surface. The end surface of the quartz crystal blank orthogonal to the Z? axis is tilted in a direction rotated through +7° to +13° or ?7° to ?13° about the X? axis.

Abstract: A surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in the upper limit mode of the surface acoustic wave stop band with the following relationships satisfied; ?=0°, 110°???140°, and 38°?|?|?44°, when the quartz substrate cut angles and the surface acoustic wave propagation direction are represented by Euler angles (?, ?, ?), and wherein the electrode thickness relative to wavelength set such that H/??0.1796?3?0.4303?2+0.2071?+0.0682, with the thickness of the IDT electrode defined as H, the width of an electrode IDT finger defined as d, the pitch between the electrode fingers of the IDT electrode as P, the wavelength of the surface acoustic wave as ?, and where ?=d/P.

Abstract: A quartz crystal resonator includes a quartz crystal resonator element having a main surface including an X axis (electrical axis) and a Z? axis of an inclination rotated at an angle (y) equal to or greater than 36.4 degrees and equal to or smaller than, 40.5 degrees from a Z axis (optical axis) around the X axis, a main vibrating portion vibrating at a predetermined resonance frequency (f) and a supporting portion integrally formed with the main vibrating portion in such a manner as to be formed peripherally to surround the main vibrating portion, and two covers having a thermal expansion coefficient equal to or greater than 6×10?6 per degrees centigrade and equal to or smaller than 10×10?6 per degrees centigrade and bonded to the supporting portion so as to sandwich the quartz crystal resonator element therebetween.

Abstract: An AT cut quartz crystal resonator element includes a quartz crystal element piece having an exciting part formed from an AT cut quartz crystal plate in a rectangular shape having an X-axis direction of a quartz crystal set to a long side, and an exciting electrode formed on each of front and back main surfaces of the exciting part, in which each side surface in the longitudinal direction of the exciting part is composed of two faces, an m-face of a quartz crystal and a crystal face other than the m-face.

Abstract: An apparatus and method of mounting a stress transducer to a fastener includes securing the transducer to a weld insert, and welding the insert to the fastener.

Abstract: A quartz crystal resonator element includes an AT-cut quartz crystal substrate, the substrate having edges parallel to each of a Z? axis obtained by rotating a Z? axis in a range of ?120° to +60° about a Y axis and an X? axis perpendicular to the Z? axis when an angle formed by rotating a +Z? axis in a direction of a +X axis about the Y? axis is a positive rotation angle; a thin section that forms a resonating section; and a thick section adjacent to the resonating section, the thin section and the thick section being formed on the quartz crystal substrate by wet etching. The thin section is formed either on a main surface of the substrate corresponding to a +Y?-axis side or on a main surface of the substrate corresponding to a ?Y?-axis side.

Abstract: A method for generating a temperature-compensated timing signal that includes counting, within an update interval, a first number of oscillations of a first micro-electromechanical (MEMS) resonator, a second number of oscillations of a second MEMS resonator and a third number of oscillations of a digitally controlled oscillator (DCO), computing a target DCO count based on the first number and second number of oscillations, computing a loop error signal based on the target DCO count and the third number of oscillations, and modifying an output frequency of a temperature-dependent (DCO) timing signal based on the loop error signal. The duration of the update interval may also be modified based on temperature conditions, and the update interval may also be interrupted and the output frequency immediately adjusted, if a significant temperature change is detected. Thus, dynamic and precise temperature compensation is achieved that accommodates constant, slowly changing, and rapidly changing temperature conditions.

Abstract: Tuning fork and method in which a pair of elongated tines having front and rear surfaces are disposed symmetrically about an axis, and balancing masses on the front surface of one tine and on the rear surface of the other tine are trimmed to reduce quadrature error and also to maintain mass balance between the tines.

Abstract: [Problem to be Solved] A piezoelectric device is provided in which, when the piezoelectric device is miniaturized, drive level characteristics are favorable, stress does not remain in a bonding portion of a housing body, and a factor causing deterioration of characteristics does not remain. [Solution] A piezoelectric device includes a base substrate 54, a resonator element 55 with a frame, and a lid 56 layered over and fixed to the resonator element with a frame, in which the base substrate, the resonator element with a frame, and the lid are all formed from a same material. The resonator element 55 with a frame includes a resonator element main body 32 and a frame section 53. Each bonding surface bonding the base substrate, the resonator element with a frame, and the lid is bonded by surface activation bonding and hermetically sealed. An electrode for driving of the resonator element main body 32 is routed to the frame section as an extraction electrode.

Abstract: By applying a laser beam that is absorbed into a quartz crystal to an upper right end of a crystal chip, the height of the crystal chip is altered step by step to form a first step, a second step, a third step, and a fourth step, respectively. As such, control of the shape of a quartz crystal resonator is easy even if the quartz crystal resonator is miniaturized, the shape and the performance of a processed quartz crystal resonator are satisfactory, quartz crystal resonators of various shapes can be formed, a quartz crystal resonator can be formed at low cost with a small number of man-hours, a load in driving a quartz crystal resonator is small, and versatile equipment and tools can be used.

Abstract: A surface acoustic wave device has a piezoelectric substrate and an IDT formed on the piezoelectric substrate, and uses an excited wave as an SH wave. The piezoelectric substrate is a quartz plate in which a cut angle ? of a rotated Y-cut quartz substrate is set in the range of ?65°????51° in a counter-clockwise direction from a crystal Z-axis and the propagation direction of a surface acoustic wave is set in the range (90°±5°) with respect to a crystal X-axis. The IDT is made of Ta or an alloyed metal containing Ta as the main component.

Abstract: A contour resonator at least includes a first vibrating substrate and a second vibrating substrate having main surfaces that face each other and are bonded. The contour resonator includes a first excitation electrode provided on a front main surface of the first vibrating substrate, a second excitation electrode provided on a back main surface of the second vibrating substrate, and a common intermediate excitation electrode provided at an interface between the first vibrating substrate and the second vibrating substrate. The first excitation electrode and the second excitation electrode are electrically connected to constitute a first terminal. The intermediate excitation electrode constitutes a second terminal. The first vibrating substrate and the second vibrating substrate perform a contour vibration in accordance with an excitation signal applied between the first terminal and the second terminal.

Abstract: A quartz crystal device includes a crystal resonator element and a package including a plurality of components. The plurality of components are bonded using a metal paste sealing material containing a metallic particle having an average particle size from 0.1 to 1.0 ?m, an organic solvent, and a resin material in proportions of from 88 to 93 percent by weight from 5 to 15 percent by weight, and from 0.01 to 4.0 percent by weight, respectively, to hermetically seal the crystal resonator element in the package.

Abstract: A piezoelectric oscillator includes: a piezoelectric substrate having at least a vibrating part and a base part; an excitation electrode formed on the vibrating part; and an oscillation circuit formed on the base part. In the piezoelectric oscillator, the oscillation circuit includes a thin film transistor made of one of polysilicon and monocrystalline silicon and is coupled to the excitation electrode.

Abstract: The outer shape of a quartz crystal blank is processed to have a predetermined shape, thereby providing an SC cut crystal resonator capable of reliably and reproducibly suppressing B mode resonance. In this SC cut crystal resonator, the surface of the quartz crystal orthogonal to the Y axis is rotated through 33° to 35° about the X axis and is then rotated from this rotated position through 22° to 24° about the Z axis, and a slender quartz crystal blank oblong in an X? axis direction is cut from the rotated surface. The end surface of the quartz crystal blank orthogonal to the Z? axis is tilted in a direction rotated through +7° to +13° or ?7° to ?13° about the X? axis.

Abstract: Disclosed are methods for producing a tuning-fork type crystal vibrating piece having neither a bump nor a groove at the root area of a pair of vibrating arms and for producing a crystal oscillation device. The method for producing a tuning-fork type crystal vibrating piece relates to a crystal tuning fork comprising a basal portion, a first vibrating arm, and a second vibrating arm, wherein both arms extend from the basal portion. The method for producing a crystal tuning fork comprises forming a first metallic film into a shape including the contours of the basal portion, the first vibrating arm and second vibrating arm on a first surface of a quartz wafer; and forming a second metallic film on the second surface opposite to the first surface of the quartz wafer into a shape covering at least a part of the basal portion between the first vibrating arm and second vibrating arm.

Abstract: An object of the present invention is to provide a Langevin type quartz sensor which is high in measurement sensitivity, suppresses the influence of the surface tension of a sample solution during measurement, and enables an installed quartz resonator to stably oscillate.

Abstract: The crystal oscillator device for simultaneously generating oscillator signals with a plurality of oscillation modes of a crystal unit, comprising: a primary resonator unit filtering the oscillator signal with a primary oscillation mode, which is one of the oscillation modes, from the output of the crystal unit, a secondary resonator unit filtering the oscillation signal, bearing a different resonance frequency from that of the primary resonator unit, with the primary oscillation mode from the output of the crystal unit, a primary phase synthesis unit, synthesizing the phases of the output signal of the primary resonator unit and the output signal of the secondary resonator unit, a tertiary resonator unit, a quaternary resonator unit, and a secondary phase synthesis unit.

Abstract: A quartz crystal resonator includes a quartz crystal resonator element having a main surface including an X axis (electrical axis) and a Z? axis of an inclination rotated at an angle (y) equal to or greater than 36.4 degrees and equal to or smaller than, 40.5 degrees from a Z axis (optical axis) around the X axis, a main vibrating portion vibrating at a predetermined resonance frequency (f) and a supporting portion integrally formed with the main vibrating portion in such a manner as to be formed peripherally to surround the main vibrating portion, and two covers having a thermal expansion coefficient equal to or greater than 6×10?6 per degrees centigrade and equal to or smaller than 10×10?6 per degrees centigrade and bonded to the supporting portion so as to sandwich the quartz crystal resonator element therebetween.

Abstract: A surface acoustic wave element is provided including an IDT and reflectors provided on both sides of the IDT that are on a surface of a quartz plate. The quartz plate is made from an in-plane rotated ST cut quartz plate whose cutting angle is expressed as (0°, 113°-135°, ±(40°-49°)) by defining and using Euler angle. The IDT and reflectors are arranged at a slant of PFA±3° with respect to a direction of a phase velocity of a surface acoustic wave in the quartz plate. If the cutting angle of the quartz plate is expressed by the Euler angle (?°, ?°, ?°), the power flow angle PFA is expressed that the PFA=0.374 (?°?90°)?10.0°.

Abstract: An SC cut crystal unit includes an SC cut quartz substrate, an exciting electrode formed on each of both surfaces of the quartz substrate, a support member supporting each of two points of the quartz substrate, and a metal case sealing the quartz substrate therein. The support member supports each of two edge portions of the quartz substrate, the edge portion being on a line rotated 80 to 90 degrees from a line of a ZZ? axis passing through a center axis of the quartz substrate.

Abstract: An AT cut quartz crystal resonator element includes a quartz crystal element piece having an exciting part formed from an AT cut quartz crystal plate in a rectangular shape having an X-axis direction of a quartz crystal set to a long side, and an exciting electrode formed on each of front and back main surfaces of the exciting part, in which each side surface in the longitudinal direction of the exciting part is composed of two faces, an m-face of a quartz crystal and a crystal face other than the m-face.

Abstract: An ultrasound probe comprising a transmitting piezoelectric layer, an electrode layer and a receiving piezoelectric layer laminated in that order, the ultrasound probe transmitting and receiving an ultrasound, wherein a polarization treatment on the receiving piezoelectric layer is carried out by providing a peelable dielectric layer on the receiving piezoelectric layer.

Abstract: A Lamb-wave high-frequency resonator includes a comb-shaped IDT electrode for exciting a Lamb wave on one main surface of a quartz substrate. The IDT electrode is formed such that the cut angle of the quartz substrate and the direction of propagation of the Lamb wave are expressed in Euler angles (0, ?, 0).

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A surface acoustic wave device includes a LiNbO3 substrate with a Euler angle in an area defined by a rectangle having four corners with coordinates (1) (0°, 7°, 101°), (2) (0°, 23°, 79°), (3) (0°, 23°, 79°), and (4) (0°, 7°, 79°), for example, and an electrode film made of Au, wherein surface acoustic waves including a longitudinal wave component as a main component are propagated thereon. The surface acoustic wave device uses longitudinal surface acoustic waves having a phase speed greater than with the “slow transverse wave”, and has a great electromechanical coupling coefficient and small propagation loss, and is suitable for handling high-frequency signals.

Abstract: A surface acoustic wave device includes a LiNbO3 substrate with a Euler angle in an area defined by a rectangle having four comers with coordinates (1) (0°, 7°, 101°), (2) (0°, 23°, 79°), (3) (0°, 23°, 79°), and (4) (0°, 7°, 79°), for example, and an electrode film made of Au, wherein surface acoustic waves including a longitudinal wave component as a main component are propagated thereon. The surface acoustic wave device uses longitudinal surface acoustic waves having a phase speed greater than with the “slow transverse wave”, and has a great electromechanical coupling coefficient and small propagation loss, and is suitable for handling high-frequency signals.

Abstract: A cut of a piezoelectric resonator uses a quartz plate having an electric axis, mechanical axis, and optic axis on an X axis, Y axis, and Z axis, respectively. An X? axis is set by rotating the X axis with an angle of 3–30 degrees in a clockwise direction about the Z axis. A Z? axis is set by rotating the Z axis in the clockwise direction with an angle of 33–36 degrees about the X? axis. The quartz plate has sides parallel to the X? axis and Z? axis, respectively. Furthermore, the plate has sides parallel to X? axis and Z? axis, respectively, which have been rotated in the clockwise direction with angles of from ?35 degrees to ?2 degrees about a Y? axis that is the thickness direction of the cut of the piezoelectric resonator.

Abstract: A piezoelectric resonator element of crystallographic point group 32, which can be operated as a thickness shear resonator contacting a carrier medium includes a singly rorated Y-cut (S1,S2) that is essentially rotated through an angle ?about the crystallographic x-axis, which differs from crystal cuts that are temperature-compensated in air or vacuum, wherein the cut has a negative temperatue coeffcient of the resonace frequency f(T) in a predetermined temperature range, preferably between 10° C. and 40° C., when there is no contact with the carrier medium, while the value of the linear temperature coeffcient a of resonance frequency in the same temperature range is less than 1 ppm/° C., preferably less than 0.5 ppm/° C. when the resonator is inb contact with the carrier medium. The resonator element (1) can additionally be provided with at least one layer sensitive to the parameter to be measured.

Abstract: A piezoelectric quartz plate having reduced frequency deviation as a function of temperature, wherein the quartz plate is cut at an angle described by: T f = ? 3.9 + 6.5 ? ? cos 2 ? ? ? + ? 1 2 ? [ c 66 ? T c 66 ? sin 2 ? ? + c 44 ? T c 44 ? cos 2 ? ? + T c 14 ? c 14 ? sin ? ? 2 ? ? ? c 66 ? sin 2 ? ? + c 44 ? cos 2 ? ? + c 14 ? sin ? ? 2 ? ? ? ] + ? [ a ? · ( sin ? ( ? · ? + ? ? ) + sin ? ( ? · ? + ? ? ) 2 ) ] + ? where quartz plate thickness is chosen in accordance with a desired frequency. This useful behavior can be manipulated such that a quartz plate is designed to counteract frequency shifts over temperature excursion of other electrical components found in typical oscillator circuits.

Abstract: The present invention provides a method for making high-frequency piezoelectric resonators so that constants of the resonator can be measured precisely. A cavity is formed at a central section of an AT-cut crystal substrate. Two grooves are formed at predetermined distances from the left and right of the cavity, and two more grooves are formed at predetermined distances outward from these two grooves. Two more grooves perpendicular to the first set of grooves are formed. A pair of main electrodes and a pair of secondary electrodes shorted to ground and surrounding the main electrodes are disposed at roughly the center of the crystal substrate. One main electrode and one secondary electrode are used as inputs and the other main electrode and secondary electrode are used as outputs, with these two terminal pairs being used to measure and adjust a frequency.

Abstract: A method of adjusting the temperature properties of piezoelectric devices and oscillation circuits which have a third-order function temperature property and the point of inflection of the third-order function temperature property outside the normal usage temperature range. The local maximum point or local minimum point temperature located in the normal temperature range is regarded as the peak temperature of the apparent second-order function temperature property, and the peak temperature is adjusted to the optimum value in the normal temperature range by rotating the temperature property around the point of inflection located outside the normal temperature range by adjusting the first-order coefficient.

Abstract: An IT-cut quartz crystal unit has a discoidal or a rectangular quartz crystal blank which is cut from a crystal of quartz along a plane perpendicular to the Y-axis of the crystal of the quartz which is rotated over approximately 34° about the X-axis, and further rotated from this rotated position over approximately 19° about the Z-axis. Excitation electrodes are formed on both main surface of the crystal blank, respectively. The crystal blank is held at positions in at least one set of opposing peripheral regions selected from an angular range of 18°±18° from the Z?-axis on the surface of the crystal blank, viewed from the center on the surface of the crystal blank; an angular range of 198°±18° from the Z?-axis; an angular range of 108°±18° from the Z?-axis; and an angular range of 288°±18° from the Z?-axis.

Abstract: A quartz sensor method and system are disclosed in which a plurality of SAW sensing resonators can be mechanically simulated for implementation upon a quartz wafer substrate. The quartz wafer substrate can thereafter be appropriately etched to produce a quartz diaphragm from the quartz wafer substrate. A plurality of SAW sensing resonators (e.g., pressure, reference and/or temperature SAW resonators) can then be located upon the quartz wafer substrate, which is based upon the previously mechanically simulated for implementation upon the substrate to thereby produce a quartz sensor package from the quartz wafer substrate.

Abstract: A lens shape piezoelectric device which is thinner than the manufacture limit thickness, which is conventionally difficult to manufacture, and a method for manufacturing the same. The piezoelectric device has a oscillation part having at least two steps where one side thereof is planar and the opposite side is thickest at a peripheral holding portion and thinner toward the central portion. A piezoelectric element of another embodiment has an oscillation part of at least two steps where the peripheral holding portion is thickest on both sides and the thickness decreases toward the central portion. In these piezoelectric devices, at least one side of the thinnest central portion of the oscillation part has a convex lens shape. A pair of electrodes are vacuum deposited in the center of these oscillation parts on both sides, and a gold wire is led as a lead wire from each electrode.

Abstract: A reliable SAW device has excellent reflection and a small size, which is achieved by reducing the number of fingers defining reflectors, such that losses due to a large electromechanical coupling coefficient are small and the film thickness of electrodes has much less effect on frequencies of the device. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Al are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, ?, 90°±2°), wherein the angle ? is within the range of about 110° to about 150°, and a normalized film thickness (H/?) of the fingers is within in the range of about 0.025 to about 0.135.

Abstract: A vibrating reed which includes a base; and a vibration arm section formed so as to protrude from this base wherein a through groove is formed in the vibration arm section, and a rigidity reinforcing section is provided in the through groove, and thus the frequency is not decreased and the CI value is not increased.