Abstract: A piezoelectric device includes: a lower substrate; an upper substrate; an intermediate substrate sandwiched between the lower substrate and the upper substrate, the intermediate substrate including: a piezoelectric vibrating portion; a frame surrounding a periphery of the piezoelectric vibrating portion; a connecting portion coupling the piezoelectric vibrating portion and the frame; a first exciting electrode disposed on an upper surface of the piezoelectric vibrating portion; a second exciting electrode disposed on a lower surface of the piezoelectric vibrating portion; a first wiring line electrically coupled to the first exciting electrode; and a second wiring line electrically coupled to the second exciting electrode; and an inside surface coupling an upper surface and a lower surface of the frame and having a slanted surface having an interior angle with respect to one of the upper surface and the lower surface, the angle being 90 degrees or more.

Abstract: CMUT elements are formed on a substrate. Electrical conductors are formed to interconnect between different portions of the substrate. The substrate is then separated into pieces while maintaining the electrical connections across the separation. Since the conductors are flexible, the separated substrate slabs may be positioned on a curved surface while maintaining the electrical interconnection between the slabs. Large curvatures may be provided, such as associated with forming a multidimensional transducer array for use in a catheter. The electrical interconnections between the different slabs and elements may allow for a walking aperture arrangement for three dimensional imaging.

Abstract: There are provided a piezoelectric ceramic composition that includes a bismuth layer-structured compound, which contains Na, Bi, Co and Ln (lanthanoide), as a main component and a piezoelectric ceramic composition that includes a compound, which contains Na, Bi, Ti, Co and Ln (lanthanoide) and has a Na0.5Bi4.5Ti4O15 type crystal structure, as a main component, wherein the piezoelectric ceramic composition has an atomic ratio of 0<Ln/(Na+Bi+Ln)?0.04.

Abstract: A piezoelectric actuator that includes plural individual electrodes each of which includes a driving electrode and a connection terminal disposed at one end of the driving electrode. A maximum difference in height between the connection terminals is 4 ?m or less.

Abstract: An electrical component includes a body made from a stack of ceramic layers. The body has a cavity that is accessible external to the body. The cavity is defined by a wall. A contact surface is on the wall. A contact device is electrically connected to the contact surface. At least part of the contact device is external to the body. The contact device includes a connection part and a spring. The spring is between the body and the connection part. The spring is for exerting a spring force on the contact surface.

Abstract: [Object] To provide piezoelectric/electrostrictive ceramics and a piezoelectric/electrostrictive element with a large electric field-induced strain without performing an aging treatment. [Solving Means] Piezoelectric/electrostrictive ceramics have the composition represented by the general formula: xBNT-yBKT-zBT (x+y+z=1) wherein at least one kind among A-site elements are allowed to become deficient from stoichiometry in which a point (x, y, z) representing content ratios x, y and z of (Bi1/2Na1/2)TiO3, (Bi1/2K1/2)TiO3 and BaTiO3 is within a range (also including a border line) of a quadrangle ABCD with a point A, a point B, a point C and a point D as vertices in a ternary phase diagram. Vacancies are formed in an A-site of a perovskite structure by allowing the A-site elements to become deficient from stoichiometry. An amount of A-site vacancies becomes at least 2 mol % to at most 6 mol %.

Abstract: A micro-electromechanical device includes a first piezoelectric actuator and a second piezoelectric actuator. The first piezoelectric actuator includes a first beam fixed on a substrate and a second beam extended in parallel to the first beam from a first connecting end to a first working end. A second piezoelectric actuator includes a third beam, spaced from the first beam, fixed on the substrate and a fourth beam extended in parallel to the third beam from a second connecting end to a second working end. The second working end faces the first working end in a perpendicular direction to a surface of the substrate.

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract: Electroactive polymer transducers configured for surface mode deformation to provide thickness mode actuation.

Abstract: A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.

Abstract: The present invention, in one set of embodiments, provides methods and systems for integrating conducting diamond electrodes into a high power acoustic resonator. More specifically, but not by way of limitation, in certain embodiments of the present invention, diamond electrodes may be integrated into a high power acoustic resonator to provide a robust sensing device that may provide for acoustic cleaning of the electrodes and increasing the rate of mass transport to the diamond electrodes. The diamond electrodes may be used as working, reference or counter electrodes or a combination of two or more of such electrodes. In certain aspects, the high power acoustic resonator may include an acoustic horn for focusing acoustic energy and the diamond electrodes may be coupled with the acoustic horn.

Abstract: A piezoelectric porcelain composition includes a main ingredient represented by a general formula ((1?x)(K1?a?bNaaLib) (Nb1?cTac)O3?xM2M4O3) (where M2 represents Ca, Ba or Sr, M4 represents Zr, Sn or Hf, and 0.005?x?0.1, 0?a?0.9, 0?b?0.1, 0 5?a+b?0.9, and 0?c?0.3), and Mn is contained in an amount ranging from 2 to 15 mol, relative to 100 mol of the main ingredient, and the M4 is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient. Preferably, Ni is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient, and also preferably Yb, In and the like specific rare earth elements is contained. A ceramic layer in a ceramic base is formed of this piezoelectric porcelain composition. As a result, the degree of sintering in a reductive atmosphere is improved, and a piezoelectric porcelain composition allowing co-sintering with Ni, and a piezoelectric ceramic electronic component using the same are realized.

Abstract: The present invention provides a piezoelectric ceramic and a piezoelectric element, which have a large dynamic d33 (dynamic piezoelectric coefficient d33), can be used even under an elevated temperature of 200° C., and exhibit a small variation between the dynamic d33 at room temperature and the dynamic d33 at 200° C. The piezoelectric ceramic of the present invention is characterized by containing 100 parts by mass of a bismuth layered compound as a main component and a total of 0.05 to 1 part by mass, in terms of oxides (MnO2 and Fe2O3), of at least one of Mn and Fe, the bismuth layered compound being represented by a compositional formula of Bi4Ti3O3O12.?(1-?)M1TiO3.?M2M3O3], wherein ? and ? satisfy the following formulae: 0.405???0.498 and 0???0.3, M1 represents at least one selected from Sr, Ba, Ca, (Bi0.5Na0.5) (Bi0.5Li0.5) and (Bi0.5K0.5), M2 is at least one selected from Bi, Na, K and Li, and M3 is at least one of Fe and Nb.

Abstract: A lamination-type resistance element includes a laminated sinter having internal electrodes of a first group and internal electrodes of a second group, the first internal electrode group including a plurality of internal electrodes facing each other through a ceramic resistance layer and defining a resistance unit at the portion where the plurality of internal electrodes face each other. A first end of the resistance unit is connected to a first external electrode and the second end is connected to a second external electrode. The second internal electrode group includes a plurality of pairs of internal electrodes in which the inner ends face each other through a gap on the same plane inside the laminated sinter, and a plurality of pairs of gaps in the plurality of internal electrodes are arranged at the same location when seen from one end of the lamination direction of the laminated sinter. Thereby, fine adjustment of a resistance value can be performed.

Abstract: A piezoelectric planar composite apparatus to provide health monitoring of a structure and associated methods are provided. The piezoelectric planar composite apparatus includes a piezoelectric electric material layer, multiple electrodes positioned in electrical contact with the piezoelectric material layer, and multiple sets of electrode interconnect conductors each positioned in electrical contact with a different subset of the electrodes and positioned to form multiple complementary electrode patterns. Each of the complementary electrode patterns is positioned to form an electric field having an electric field axis oriented along a different physical axis from that of an electric field formed by at least one other of the complementary electrode patterns. The interconnect conductors can be distributed over several electrode interconnect conductor carrying layers to enhance formation of the different complementary electrode patterns.

Abstract: A liquid ejecting head including a pressure-generating chamber which communicates with a nozzle opening, and a piezoelectric element including a first electrode, a piezoelectric layer formed above the first electrode and having a perovskite structure represented by the general formula ABO3, and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer, lead, zirconium, and titanium are present at A sites of the perovskite structure, and lead, zirconium, and titanium are present at B sites of the perovskite structure.

Abstract: A material for an actuator is provided which is reduced in weight, can be micro-miniaturized and can be used stably in a gas phase such as in atmospheric air safely, and an actuator using the material is provided. The material used for the actuator comprises a material formed by mixing fine conductive particles with a polymer material having a large absolute value of thermal expansion coefficient.

Abstract: A piezoelectric ceramic composition includes a primary component represented by the formula (1-x)(K1-a-bNaaLib)m(Nb1-c-dTacSbd)O3-xM1nM2O3, and 0.1 to 10 moles (preferably 1.5 to 10 moles) of at least one specific element selected from the group consisting of In, Sc, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, and Lu with respect to 100 moles of the primary component, wherein M1 is Ca, Sr, or Ba M2 is Ti, Zr, or Sn; and x, a, b, c, d, m, and n satisfy 0.005?x?0.1, 0?a?0.9, 0?b?0.3, 0?a+b?0.9, 0?c?0.5, 0?d?0.1, 0.9?m?1.1, and 0.9?n?1.1. Preferably, Mn, Ni, Fe, Zn, Cu, or Mg is further added. As a result, at both a very low and a high electric field, a high piezoelectric d constant can be stably obtained with a high efficiency.

Abstract: The embodiments relate to a piezoelectric component including at least one fully active piezoelectric element comprising electrode layers and piezoelectric layers arranged therebetween. The electrode layers are conveyed to a lateral edge of the piezoelectric element and contacted there. The external electrode is attached in a structured fashion for electrical contacting and/or a structured external electrode is made available: The external electrode essentially includes two components, namely the contacting field and the contacting path. In the event of several piezoelectric elements (piezoelectric actuator in multilayer structure) stacked one above the other, the contacting path functions as a collector electrode, which connects the contacting fields of the piezoelectric elements to one another. The insulation path exists for the electrical insulation of the contacting path from electrode layers which are not to be contacted.

Abstract: A piezoelectric element 13 has a common electrode 19 that receives electricity from a terminal 57. The terminal 57 has a through hole 67 and an electric insulating layer 61. The piezoelectric element 13 is arranged so that the common electrode 19 faces the electric insulating layer 61 of the terminal 57. A liquid stopper 69 is formed around the through hole 67 so as to come between the common electrode 19 and the terminal 57 when the common electrode 19 and terminal 57 are set to face each other. A liquid conductive adhesive 71 is injected into the through hole 67 to fill a gap defined by the liquid stopper 69 between the terminal 57 and the common electrode 19 and secure electric connection between the terminal 57 and the common electrode 19. This configuration improves the reliability of wiring to the piezoelectric element and prevents the piezoelectric element from being damaged.

Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

Abstract: A piezoelectric material contains a material with the molecular formula P1?c?dDcZd, wherein: 0<c?0.15 and 0?d?0.5, wherein P represents the composition Pb(Zr1?yTiy)O3 and wherein: 0.50?1?y?0.60, wherein Z represents an additional component of the perovskite type of structure, wherein D represents a material according to the general formula [(M1O)1?p(M2O)p]a[Nb2O5]1?a, wherein M1 represents Ba1?tSrt with 0?t?1 and M2 represents strontium or calcium and wherein: ?<a<1 and 0<p<1, wherein the material D contains the cryolite type of structure.

Abstract: Exemplary embodiments of the present invention are related to an apparatus and method for providing a strain tolerant electrode, comprising: an upper layer; a lower layer; with the potential for a plurality of compliant members providing electrical communication between the upper layer and the lower layer; and wherein a surface of the upper layer is in direct contact with a surface of the lower layer to provide an electrical path between the upper layer and the lower layer.

Abstract: An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length ? of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/??0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.

Abstract: A piezoelectric assembly includes a piezoelectric substrate that has a top surface, a bottom surface, and at least one side surface. A top electrode is defined on the top surface and a first aperture is defined in the top electrode. A bottom electrode is disposed on the bottom surface. The electrodes are formed from a thin film metal. A first thick film bond pad is disposed in the first aperture and is in contact with the piezoelectric substrate. The first thick film bond pad is in electrical contact with the top electrode. In further embodiments, a second thick film bond pad is disposed on either the top surface or in a second aperture defined in the bottom electrode.

Abstract: Piezoelectric vibrators provided with an electrode that includes a drive electrode and adjustment electrodes formed in advance on part of the electrode; the drive electrode and adjustment electrodes that are initially electrically connected to each other are electrically cutoff and insulated from each other by cutting conductive parts between the drive electrode and adjustment electrodes, or the mutually insulated drive electrode and adjustment electrodes are electrically connected using solder, a wire, or another electrically conductive member, whereby the characteristic frequencies are adjusted.

Abstract: An object of the present invention is to; miniaturize, increase the capacity, and reduce the price of piezoelectric components. The present invention relates to a piezoelectric component and a manufacturing method thereof, characterized in that: there are bonded and laminated at least two or more piezoelectric elements in which comb-teeth electrodes, wiring electrodes having element wirings that are arranged adjacent to the comb-teeth electrodes, and electrode terminals connected to the wiring electrodes, are formed on a principal surface of a plurality of piezoelectric substrates, while forming hollow sections between the respective piezoelectric elements; through electrodes are formed in the respective piezoelectric substrates so as to pass therethrough; the through electrodes are connected to the electrode terminals; and the piezoelectric substrates are sealed by a resin sealing layer.

Abstract: A piezoelectric ceramic composition contains main components represented by a general formula of [(Pb1-x-yCaxSry){Ti1-z(Zn1/2W1/2)z}O3], and x, y, and z satisfy 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.1?x+y?0.2, and 0.04?z?0.1. It is also preferable that the piezoelectric ceramic composition contains 0.05 weight part to 1.0 weight part of a Mn component calculated in terms of MnCO3 with respect to 100 weight parts of the main component. A piezoelectric part includes a piezoelectric ceramic element that is formed by the piezoelectric ceramic composition. It is thereby possible to realize a piezoelectric ceramic composition that can be fired at low temperature, that has a high Curie point Tc resistant to a reflow heating treatment on a lead-free solder, and that exhibits satisfactory piezoelectricity, and a piezoelectric part using this piezoelectric ceramic composition.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.

Abstract: In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

Abstract: A surface wave sensor apparatus has a structure such that, on a first principal surface of a base substrate having first through-hole conductors, surface acoustic wave devices are bonded via thermo-compression anisotropic conductive sheets, on first principal surfaces of piezoelectric substrates of the surface acoustic wave devices, electrodes, such as IDTs, are provided, respectively. These electrodes extend toward second principal surfaces via second through-hole conductors and are provided in the piezoelectric substrates. The first through-hole conductors overlap with the second through-hole conductors with the thermo-compression anisotropic conductive sheets being disposed therebetween, respectively.

Abstract: A ceramic multilayer element can be produced by pressing together a plurality of ceramic multilayer segments. Each multilayer segment includes a stack of a plurality of ceramic layers that are pressed together.

Abstract: An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators.

Abstract: Disclosed is a piezoelectric component (1) comprising a piezoelectric transducer (10) wherein a pair of electrodes (20a, 20b) are formed on both major surfaces of a piezoelectric substrate (11), a pair of frame members (30a, 30b) fitted to both major surfaces of the piezoelectric transducer (10), a pair of sealing substrates (40a, 40b) composed of a light-transmitting resin material and so fitted as to cover the frame members (30a, 30b), opaque coating layers (50a, 50b) respectively formed on the sealing substrates (40a, 40b), and a pair of input/output terminal electrodes (61a, 61b) respectively connected to the electrodes (20a, 20b). By having such a constitution, the state of sealed space and sealing widths of the frame members (30a, 30b) can be checked by visual examination such as direct visual observation or image recognition, and thus a highly reliable piezoelectric component (1) can be obtained. In addition, a mark can be made on the coating layers (50a, 50b).

Abstract: A liquid ejecting head includes a pressure generating chamber that is communicated with a nozzle opening and a piezoelectric element includes a first electrode formed above the pressure generating chamber, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer. In addition, an amorphous layer including an amorphous material is formed on a surface of the piezoelectric layer at the second electrode side.

Abstract: A contour resonator reducing fluctuation of resonance frequency due to variety of a film thickness of an excitation electrode is provided. A counter resonator includes a quartz substrate and excitation electrodes respectively formed on front and back surfaces of the quartz substrate. There is a range where a frequency sensitivity with respect to an electrode film thickness is smaller than that in related art when a ratio Fe/Fb between a contour vibration frequency Fe of the excitation electrodes and a contour vibration frequency Fb of the substrate is larger than 0.69. That is, fluctuation of the contour vibration frequency with respect to variety of the electrode film thickness can be made small substantially.

Abstract: Internal electrode layers (5) include a common electrode layer (3) and feed electrode layers (6) alternately placed in a stacking direction with piezoelectric layers (1) interposed between the common electrode layer (3) and the feed electrode layers (6). The common electrode layer (3) has a common electrode (3a). The feed electrode layers (6) include a first feed electrode layer (6a) and a second feed electrode layer (6b). The first feed electrode layer (6) has four divided electrodes (2a through 2d) and a first connection electrode (2e) for providing connection between two of the divided electrodes (2b, 2d). The second feed electrode layer (6) has four divided electrodes (4a through 4d) and a second connection electrode (4e) for providing connection between two of the divided electrodes (4a, 4c).

Abstract: In order to provide a multi-layer electronic component in which the occurrence of delamination between the ceramic layer and the internal electrode is restricted and a method for manufacturing the same, the multi-layer electronic component of the present invention comprises a stack formed by stacking piezoelectric layers and internal electrodes one on another alternately and a pair of external electrodes formed on two opposing side faces of the stack, wherein the internal electrode consists of a first internal electrode connected to the external electrode formed on one of the two side faces and a second internal electrode located between the first internal electrode and connected to the external electrode formed on the other one of the two side faces, and wherein the internal electrodes and the piezoelectric layers are faced in proximity so that a space between them is 2 ?m or less over an area occupying 50% or more of the active region where the first internal electrode and the second internal electrode oppo

Abstract: A piezoelectric ceramic base member is formed of a bismuth layer compound to have a bar shape. Main electrodes and are provided on two end surfaces of the piezoelectric ceramic base member in an oscillation direction, and connection electrodes are formed at side-surface central portions of the piezoelectric ceramic base member and are electrically connected to the main electrodes through extraction conductors interposed therebetween, respectively. In addition, the oscillation and polarization directions are set in the same direction, and the piezoelectric ceramic base member is driven at a resonant frequency or at a frequency in the vicinity thereof. In the piezoelectric ceramic base member, the crystal c axis is preferably oriented in a direction orthogonal to the polarization direction. Accordingly, a resonant actuator can be realized which is able to obtain a high oscillation speed since having a large mechanical quality factor Qm, and the oscillation of which is not disturbed by mechanical factors.

Abstract: The present invention provides a piezoelectric composite sensor comprising a piezoelectric material layer formed of a piezoelectric composite obtained by mixing piezoelectric material powder with a polymer, and electrodes formed of a conductive composite or conductive polymer obtained by mixing conductive filling particles with a polymer matrix and formed on both surfaces of the piezoelectric material layer. The piezoelectric composite sensor of the present invention has advantages of superior piezoelectric and dielectric properties, high mechanical strength, improved reliability and process flexibility, a simplified process and reduced process costs, and improved productivity.

Abstract: A piezoelectric oscillation element (1) comprising a piezoelectric substrate (10), a first conductor film (21) formed on one main surface of the piezoelectric substrate (10), a second conductor film (22) formed on the other main surface, and grounding terminals (31a, 31b) formed on the side surfaces of the piezoelectric substrate (10). Specified capacitances are respectively formed between the first and second conductor films (21, 22) formed on the main surfaces of the piezoelectric substrate (10) and the grounding terminals (31a, 31b) formed on the side surfaces thereof. Larger capacitances can be formed than when electrodes are disposed on the same main surface in proximity of each other to form a capacitance, whereby no adverse effect is given to thickness vibration occurring between the first and second conductor films (21, 22).

Abstract: An inexpensive piezoelectric sensor where noise unlikely occurs and a method for manufacturing the same are provided. A piezoelectric body (2) made of polymeric material, a first electrode-supporting portion (3) disposed at one side of the piezoelectric body (2) and supporting a signal electrode (3b) on a first insulator (3a), and a second electrode-supporting portion (4) disposed at the other side of the piezoelectric body (2) and supporting a ground electrode (4b) on a second insulator (4a) are included, and the first electrode-supporting portion (3) and the second electrode-supporting portion (4) are arranged so that the signal electrode (3b) and the ground electrode (4b) overlap each other in a layering direction.

Abstract: A piezoelectric transformer includes an input part and an output part. The input part and the output part are mechanically connected along a path that includes an insulating part. The insulating part includes a surface with a depression. In the input part, mechanical oscillations are generated using electrical voltages, and, in the output part, the mechanical oscillations are converted to electrical fields.

Abstract: A piezoelectric resonator include a multi-layer top electrode. The multi-layer top electrode includes at least a top metal layer and a bottom metal layer. A top metal layer edge is recessed compared to a bottom metal layer edge allowing conformal deposition of a passivation layer. The passivation layer covers and protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top electrode. In some embodiments, the multi-layer top electrode is configured as a bi-layer. In other embodiments, an extra layer is configured between the top metal layer and the bottom metal layer, for example a shunt load layer.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.

Abstract: A piezoelectric resonator device comprises a piezoelectric resonator plate, a base for holding the piezoelectric resonator plate, a lid for hermetically enclosing the piezoelectric resonator plate held on the base, and a support member made of a brittle material for reducing external stress to the piezoelectric resonator plate. The piezoelectric resonator plate is held on the base via a support member. In this case, the base, the piezoelectric resonator plate, and the support member are bonded with each other using a base bonding member and a piezoelectric resonator plate bonding member (connection bumps) by FCB using ultrasonic waves. The base is electrically and mechanically bonded with the support member via the base bonding member in a plurality of areas of the support member using ultrasonic waves.

Abstract: An exemplary piezoelectric device includes a base having a first connection electrode electrically connected to an external electrode. A second connection electrode is connected to the first connection electrode on a first main surface of a supporting member affixed to the base. A third connection electrode, formed on a second main surface of the supporting member, is electrically connected to the second connection electrode. A piezoelectric vibrating piece is affixed to the supporting member by application of an adhesive applied to the third connection electrode. The piezoelectric vibrating piece and includes excitation electrodes. A convexity is located and extends in a designated direction relative to the third connection electrode to prevent applied adhesive from spreading beyond a designated area of the piezoelectric vibrating piece.

Abstract: A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips.

Abstract: A piezoelectric thin-film resonator includes: a lower electrode supported by a substrate, a space being defined below the lower electrode; a piezoelectric film provided on the lower electrode and the substrate; and an upper electrode provided on the piezoelectric film so as to form a resonance portion in which the upper electrode faces the lower electrode across the piezoelectric film. At least one of the lower electrode and the upper electrode has an interconnection portion used to extract a signal from the resonance portion and located above the space. The at least one of the lower electrode and the upper electrode has a first mass per unit area in which the at least one of the lower electrode and the upper electrode contacts the piezoelectric film and a second mass per unit area in the resonance portion. The first mass per unit area is smaller than the second mass per unit area.

Abstract: A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.