Abstract: A method for forming an electron emissive film (200, 730, 830) includes the steps of: (i) evaporating a graphite source (120, 620) in a cathodic arc deposition apparatus (100, 600) to create a carbon plasma (170, 670), (ii) applying a potential difference between the graphite source (120, 620) and a glass or silicon deposition substrate (130, 630, 710, 810) for accelerating the carbon plasma (170, 670) toward the deposition substrate (130, 630, 710, 810), (iii) providing a working gas within the cathodic arc deposition apparatus (100, 600), and (ii) depositing the carbon plasma (170, 670) onto the deposition substrate (130, 630, 710, 810).

Abstract: A method for forming a conductively coated matrix structure for separating rows and columns of sub-pixels on the faceplate of a flat panel display device. In one embodiment, the present invention deposits a photoresistive material over the interior surface of a faceplate having a non-conductive matrix structure formed thereon. The photoresistive material is deposited into sub-pixel regions separated by the matrix structure. The photoresistive material is dried and exposed in the sub-pixel regions. After unexposed photoresistive material is removed, a layer of aluminum is evaporated over the interior surface of the faceplate such that the matrix structure and the exposed layer of photoresistive material in the sub-pixel regions is coated with a conductive layer of aluminum. Next, the present invention applies an etchant to the exposed photoresistive material disposed in the sub-pixel regions.

Abstract: A field emission type fluorescent display device capable of exhibiting high luminescence under a low voltage while minimizing leakage luminescence and color mixing, to thereby improve display quality. An anode and a field emission cathode are arranged opposite to each other and the cathode is divided into a plurality of unit regions in a matrix-like configuration, which are matrix-driven, resulting in a display being selectively carried out. The unit regions each are divided into a plurality of subregions and the cathode and anode are divided into a plurality of strip-like electrodes perpendicular to each other, respectively. The strip-like electrode each correspond to each of subregions and are commonly connected to each other at every second interval. Also, a focusing electrode may be arranged between the gate and the anode so as to surround the unit regions.

Abstract: A field electron emission material comprises an electrically conductive substrate and, disposed thereon, electrically conductive particles embedded in, formed in, or coated by a layer of inorganic electrically insulating material. A first thickness material is defined between the particle and the environment in which the material is disposed. The dimension of each particle between the first and second thicknesses is significantly greater than each thickness. Upon application of a sufficient electric field, each thickness provides a conducting channel, to afford electron emission from the particles By use of an inorganic insulating material, surprisingly good stability and performance have been obtained. The particles can be relatively small, such that the electron emitting material can be applied to the substrate quite cheaply by a variety of methods, including printing. The material can be used in a variety of devices, including display and illuminating devices.

Abstract: Display panels having at least one suspended fibrous cathode containing an electron field emitter are disclosed. The fibrous cathode is supported by a substrate (10) containing two sets of parallel rows of crests and valleys. The first set of parallel crests (11) and valleys (12) provide the valleys along which the fibrous cathode is aligned. The second set of parallel crests (13) and valleys (14) is perpendicular to the first set. The valleys (14) provide the means for suspending the fibrous cathode. The display panels can be produced in large sizes while still maintaining high quality and efficiency.

Abstract: A field emission cold-cathode device includes a support member and a plurality of emitters formed on said support member to emit electrons. Each emitter is made up of a plurality of carbon nanotubes basically constituted by an array of 6-membered rings of carbon. 70% or more of all of the carbon nanotubes have diameters of 30 nm or less. An aspect ratio representing the ratio of the height to the bottom diameter of the carbon nanotube forming the emitter is set at from 3 to 1.times.10.sup.3. The period of the 6-membered rings of carbon in the carbon nanotube is a multiple of 0.426 nm or 0.738 nm.

Abstract: A field emission device (400) includes a substrate (414), a cathode (415) disposed on substrate (414), a dielectric layer (418) disposed on cathode (415) and defining an emitter well (421) and further defining a focusing well (448), an electron emitter (420) disposed within emitter well (421) and connected to cathode (415), a gate electrode (422) disposed on dielectric layer (418), and a focusing structure (450) disposed within focusing well (448) and connected to cathode (415) for focusing an electron beam (430) emitted by electron emitter (420). A method for fabricating field emission device (400) includes directing a second collimated vapor beam (461) toward focusing well (448) subsequent to forming an encapsulating layer (478) over emitter well (421), thereby forming focusing structure (450).

Abstract: A vacuum microdevice includes a first electrode, an insulating film, and a second electrode. The first electrode projects in a current radiation region on a substrate and has a sharp tip. The insulating film is formed on the surface of the first electrode except the tip of the first electrode. The second electrode is formed on the insulating film and has an electrode thickness which increases away from the tip of the first electrode.

Abstract: There is provided a field emission cold cathode including a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an electrically conductive gate electrode layer formed on the insulating layer, a plurality of cavities being formed throughout both the insulating layer and the gate electrode layer, a conical emitter formed on the semiconductor substrate in each one of the cavities, and an insulating wall formed at least in the semiconductor substrate so that the insulating wall surrounds each one of the cavities. The insulating wall partitions the semiconductor substrate into a first group of blocks located at a marginal end of the semiconductor substrate and a second group of blocks located within the first group of blocks. Each one of the first group of blocks is designed to have a greater area than an area of each one of the second group of blocks.

Abstract: An electron beam exposure apparatus, comprising an electron emitting apparatus including an extracting electrode and a plurality of electron emitting elements having end portions exposed individually in a plurality of openings formed in rows and columns on a principal face of the extracting electrode, a control power supply for applying a voltage between the extracting electrode and selected ones of the electron emitting elements to emit electrons from the selected electron emitting elements, an acceleration electrode in the form of a flat plate having a number of very small openings equal to the number of and corresponding to the electron emitting elements, and a converging electrode in the form of a flat plate having a number of very small openings equal to the number of and corresponding to the electron emitting elements.

Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: An electron-emissive film (170, 730) is made from graphite and has a surface defining a plurality of emissive clusters (100), which are uniformly distributed over the surface. Each of the emissive clusters (100) has dendrites (110) extending radially from a central point (120). Each of the dendrites (110) has a ridge (130), which has a radius of curvature of less than 10 nm. The graphene sheets (160) that form the dendrites (110) have a (002) lattice spacing within a range of 0.342-0.350 nanometers.

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K=1334.+-.4 cm.sup.-1 with a half-width value of 12.+-.6 cm.sup.-1, at K=1140.+-.20 cm.sup.-1 and at K=1470.+-.20 cm.sup.-1, the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10.sup.-4 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm.sup.2. The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross-section.

Abstract: A cathode assembly includes a substrate (1101), a plurality of electrically conductive strips (1102), nano-size diamond particles (1701), and a layer (1801) of diamond material deposited (CVD) over the diamond particles (1701).

Abstract: An electric field emission cold cathode which is free of short-circuited damage upon discharge is provided by forming a highly voltage-withstandable control mechanism, which is capable of limiting generation of current upon discharge, with a simple structure and through simple fabrication processes. The electric field emission cold cathode includes a sharp-pointed emitter, a gate electrode having an aperture surrounding the emitter, and a cathode electrode connected to the emitter. The electric field emission cold cathode further includes an n-type diffused layer connected to the emitter and the cathode electrode, and a p-type silicon substrate electrically connected to the cathode electrode at least at a side thereof facing the emitter. A pinch-off resistor is provided between the emitter and the cathode electrode. The pinch-off resistor has a saturation current value smaller than a short-circuit breakdown current of the emitter.

Abstract: A field emission device (100) includes an electroplated structure (122) and an electron emitter (118). Electroplated structure (122) includes a base (124), which is disposed proximate to electron emitter (118) and is made from the same material from which electron emitter (118) is made. Electroplated structure (122) further includes an electroplating electrode (126), which is disposed on base (124), and an electroplated layer (128), which is disposed on electroplating electrode (126). A method for fabricating field emission device (100) includes a step of forming electron emitter (118) and further includes a step of forming base (124) during the step of forming electron emitter (118). The method further includes a step of completely encapsulating electron emitter (118) prior to a step of forming electroplated layer (128).

Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Piled-up films composed of different materials or composed of the same material manufactured by different methods or different conditions are used as an insulating layer for a field-emission cold cathode. The insulating layer may have a composition which is varied continuously in the thickness direction. A cross-section of the insulating layer may be made uneven. Preferably, a triple junction in which a substrate, the insulating layer, and a vacuum are in contact with one another, is disposed at a position which can not be seen from outside the device.

Abstract: A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional base material, a lower electrode, a diamond film, a fluorescent thin film, an upper electrode, and an upper electrode for wiring purposes. Under a proper biasing voltage between the lower and upper electrodes, carriers (either electrons or holes) are injected from the lower electrode to the diamond film, and are accelerated in the diamond film, so as to excite the fluorescent thin film and cause the thin film to fluoresce.

Abstract: A ceramic member has a flat or curved ceramic plate having a plurality of minute through holes of a maximum pore diameter of 150 .mu.m or less, and having electrodes installed on one surface of the plate. The ceramic member controls the ejection of ions carrying either positive or negative charge from the minute through holes by switching the sign of charge carried by the electrodes. The minute through holes are tapered toward the side where ions are ejected. The ceramic member gives an improved property of ejecting charged particle from minute through holes while maintaining high mechanical strength and productivity.

Abstract: A method for connecting, both mechanically and electrically, an electrically conducting field emission fiber (31) to an electrically conducting area of a substrate (32) involving placing the field emission fiber (31) across the surface of the substrate (32) and centering the field emission fiber (31) over the area of the substrate (32) where the connection is to be made, placing a metal ribbon (33) over the field emission fiber (31) with the dimension along the length of the metal ribbon (33) essentially perpendicular to the axis of the field emission fiber (31) and such that the metal ribbon (33) extends over the field emission fiber (31) with each end portion of the metal ribbon (33) in direct contact with the conducting area of the substrate (32), and bonding the metal ribbon (33) to the area of the substrate (32) and to the field emission fiber (31) by means of ultrasonic, thermocompression or compression bonding, substantially as shown in the figures, and described in the specification.

Abstract: A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors telecommunications devices, and the like.

Abstract: A field emission cold cathode element designed with the objects of enabling control of overcurrents that arise at times of discharge without adding a power source or complicating the operating circuits, realizing high-frequency operation and lower power consumption without giving rise to short-circuit damage due to discharge breakdown, and moreover, suppressing increases in element temperature; wherein an n-type region underlying emitters is divided between three n-type semiconductor regions: a first n-type semiconductor region, a second n-type semiconductor region and a third n-type semiconductor region.

Abstract: A field emission element that can prevent one cathode electrode line from being completely disabled due to a short circuit between an emitter electrode and a gate electrode. One cathode electrode line consists of a stripe cathode conductor and plural island electrodes arranged on the one side of the cathode conductor. The gate electrode is disposed on the insulating layer overlaying the upper surface of each island electrode. The first resistance layer and the second resistance layer each having a different resistance value are laminated in a current control resistance layer. When excessive current flows through the emitter cone, the laminated thick-film portion is destroyed so that only the island electrode connected to the emitter cone is electrically separated off from the cathode conductor. One second resistance layer is locally laminated on the first resistance layer and for each of plural island electrodes.

Abstract: The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

Abstract: A field emission device is provided, which is able to prevent the inclination of emission direction of electrons. An insulating layer is formed on a first main surface of a substrate. A conductive layer with a gate electrode part and an interconnection part is selectively formed on the insulating layer. A second conductive layer is formed on the second main surface of the substrate. The first part has a window to expose the insulating layer. The insulating layer has a hole to expose the first main surface of the substrate. The hole is located just below the window of the conductive layer. A conical cathode is formed on the exposed first main surface of the substrate in the bole. The central axis of the cathode, which penetrates the tip of the cathode, is tilted with respect to a normal of the second conductive layer toward an opposite side to the interconnection part of the conductive layer. The direction of the emitted electrons is approximately parallel to the normal of the second conductive layer.

Abstract: A base structure for use with a flat panel field emission display device. A spacer layer is provided in the base assembly to generally planarize the base assembly prior to mechanical planarization. As a result, the base assembly is more reliable and permits improved manufacturing yields. In addition to improving planarity of the base assembly, the spacer layer may increase electrical isolation between the base electrodes and the grid electrodes of the field emission display.

Abstract: A field emission device (100, 200) includes a cathode plate (102) having a plurality of electron emitters (532), an anode plate (104) disposed to receive electrons emitted by plurality of electron emitters (532), a frame (109) interposed between cathode plate (102) and anode plate (104) and defining a central opening (112), a mating member (110, 210, 310, 410, 510) coextensive with frame (109) and disposed within central opening (112), and a getter structure (114, 214, 314, 414, 514, 614) mated with mating member (110, 210, 310, 410, 510).

Abstract: A unified fibrous field emission element is provided including a conductive fibrous central core element having an insulating material directly thereon the conductive fibrous central core element and a gate electrode directly thereon the insulating material, the conductive fibrous central core element further including emission sites situated longitudinally along the length of the conductive fibrous central core element.

Abstract: A microtip emissive cathode electron source has a series of cathode conductors carrying a plurality of microtips and a series of grids. Each of the electrodes of at least one of the series is in contact with a resistive layer having meshes, a group of the microtips facing each mesh. A conductive element faces the interior of each mesh in front of the group of microtips corresponding to the mesh and is in contact with the resistive layer.

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc.

Abstract: A field emitter device comprises a dielectric anodic aluminum oxide layer having pores with wires the front ends of which constitute individual field emitting cathodes, a gate eleectrode overlying a front surface of the layer, and an address electrode overlying a back surface of the layer and in electrical contact with the wires. The problem of short circuit between the gate electrode and the field emitter is overcome by cleaning the pore walls adjacent the gate electrode and/or by selectively dissolving the back ends of individual wires.

Abstract: A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), forming within the emitter well (115) an electron emitter structure (118) having a surface (123), forming on a portion of the dielectric layer (114) a gate electrode (116), depositing on the dielectric layer (114) a sacrificial layer (210), thereafter depositing on the surface (123) of the electron emitter structure (118) a coating material (220, 320, 420) that has an emission-enhancing material, and then removing the sacrificial layer (210).

Abstract: Integrated circuits, including field emission devices, have a resistor element of amorphous Si.sub.x C.sub.1-x wherein 0<x<1, and wherein the Si.sub.x C.sub.1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

Abstract: A field emission cold cathode has a plurality of emitters in a group for each gate electrode and a serial resistance layer divided into a plurality resistance layer sections each corresponding to one of the emitters. The resistance layer is divided by a deep trench filled with an insulator layer or conductive layer forming a P-N junction between the same and the resistance layer section. A linear voltage-current characteristic is obtained by a stable resistance of the resistance layer section to prevent a short-circuit failure between the emitter and the gate electrode.

Abstract: There is provided a field emission thin film cold cathode including a substrate, an electron-emission layer formed on the substrate and having a spherical surface or a curved surface approximated to a spherical surface recessed into the substrate, a first electrode disposed about the electron-emission layer and having a greater height from the substrate than the electron-emission layer, an electrically insulating layer formed on the first electrode, and a second electrode formed on the electrically insulating layer. The electron-emission layer may be made of monocrystalline diamond, polycrystalline diamond or amorphous diamond. The above-mentioned field emission thin film cold cathode provides an electron source which makes it no longer necessary to fabricate a micro-structured device, can be fabricated without a lithography apparatus having a high accuracy, and has a small current modulating voltage.

Abstract: A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.

Abstract: A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: A field-emission device takes the form of an anode and a cathode, both being placed on a substrate made of a dielectric material. The anode is situated at a level which is below the level of an edge of the cathode which faces towards the anode.

Abstract: A cold electron emission device including an emitter having a protrusion having a sharp tip and disposed at a first end of a semiconductor thin film formed on an insulation substrate; a cathode electrode disposed at a second end of the semiconductor thin film; at least one gate electrode disposed between the emitter and the cathode electrode for controlling a current flowing through the semiconductor thin film; an insulating layer arranged to cover the semiconductor thin film, cathode electrode and gate electrode, except for the emitter; and a lead electrode arranged on the insulating layer such that it surrounds the tip of the emitter, thereby making it possible to achieve a cold electron emission device with reliable current stability.

Abstract: Carbon cone and carbon whisker field emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels utilizing said cathodes. The carbon cone and carbon whisker field emitters can be formed by ion beam bombardment (e.g., ion beam etching) of carbon materials (e.g., bulk carbon, carbon films or carbon fibers).

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract: An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A) and a focus coating (39 or 39A) that penetrates partway into a focus opening (40) extending through the base focusing structure above an electron-emissive element (24). The focus coating is normally of lower resistivity than the base focusing structure and thereby provides most of the focus control over electrons emitted by the electron-emissive element. The focus coating is typically formed by an angled deposition technique.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract: Field emission devices may include emitter wells formed in a body of dielectric material. A gate conductor may be provided along the upper surface of the dielectric material. A gate hole may be provided in the gate conductor directly above each of the emitter wells. A method for forming the gate holes and emitter wells is disclosed. The method includes the steps of providing a first gate conductor layer on a dielectric layer. A pattern of second gate conductor material may be formed over the first gate conductor layer, said pattern defining gate holes in the second gate conductor material. The gate holes may then be completed and emitter wells formed by etching through the first gate conductor layer and into the dielectric layer using an etch that selectively etches the first gate conductor layer and the dielectric layer, and does not etch substantially the second gate conductor material.

Abstract: A flat panel display includes a magnetic material for focusing electrons onto a faceplate or phosphors of each pixel on a screen. In one embodiment, a display screen includes a faceplate having a magnetic material (30) deposited thereon. In an alternate embodiment, a field emission display including a substrate (11) with a cathode conductor (12); electron emitting tips (13) disposed over the cathode conductor (12); an insulator (14) disposed around the electron emitting tips (13); a conductive gate (15) over the insulator (14); and a magnetic material layer (19) for focusing electrons emitted from the emitting tips (13).