Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: A flat display is provided, which includes: a cathode plate including emitter electrode lines each having emitter tips provided in pixel areas, and gate electrode lines crossing the emitter electrode lines at the pixel areas; and an anode plate spaced a predetermined distance from the cathode plate in an opposed relation and having an anode conductive layer and fluorescent layers formed on the anode conductive layer in the respective pixel areas; the emitter electrode lines and the gate electrode lines each having transparent portions formed of a transparent conductive film at least in the pixel areas so that light emission from the fluorescent layers can be viewed through the transparent portions.

Abstract: A field emission lamp, of either a diode or triode structure has a packaging whereby electrical access to the various electrodes of the lamp is provided through the rear or underside of the field emission device so that the individual lamps can be placed in close proximity to each other.

Abstract: A technique for creating a patterned coating entails forming a first region (26) over a primary component (22). A second region (28) is formed over part of the first region. The first region is etched so as to undercut the second region, thereby forming a gap (30) below part of the second region. Coating material is then provided over the structure. Due to the presence of the gap, the coating material accumulates over the structure in a pair of segments spaced apart along the gap. One coating segment (32A) overlies the primary component. The other coating segment (32B) overlies the second region.

Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

Abstract: The present invention relates to a flat display screen anode of the type including at least two sets of alternate parallel bands of anode conductors coated with phosphor elements to be excited by primary electrons, these bands being separated from one another by insulating bands including, at least at the surface, a material with a secondary emission coefficient which is lower than or equal to unity, at least in the energy range of the primary electrons.

Abstract: The present invention relates to a flat display screen including a cathode associated with a grid for extracting electrons emitted by at least one region of the cathode, and an anode provided with phosphor elements placed facing the cathode/grid, the cathode having no emissive region in the areas located above the phosphor elements, these areas including a conductive layer which can be biased independently from the emissive regions.

Abstract: An emitter structure for a field emission display includes: a substrate (100) having a top surface; an address line (142) embedded in the substrate (100) and having an upper surface substantially coplanar with the top surface of the substrate (100); and an emitter site (152) having an emitter (154) superjacent to the top surface of the substrate (100) apart from the address line (142) and having a contact (153) having a first portion coupled to the emitter (142) and a second portion coupled to the address line (142). The substrate (100) may further include a base layer (110), and a dielectric layer (120), and the contact (153) may further act as a resistor to limit the current to the emitter (154).

Abstract: A cathode structure of an electron gun for a cathode ray tube includes: a substrate (51); cathode electrode layers (52) formed on the substrate (51) and spaced apart from each other at predetermined intervals; a plurality of metal tips (53); an insulating layer (54) formed on the cathode electrode layers (52) and the substrate (51) to isolate each of the metal tips (53) from each other; a gate electrode layer having a first gate electrode portion (56) having a gate through which the metal tips (53) are exposed and formed on top of the insulating layer (54), and a second gate electrode portion (57) extending horizontally from said first gate portion (56) and divided into several parts by a plurality of gaps (60) for reducing the capacitance between the cathode electrode layers (52) and the second gate electrode portion (57).

Abstract: Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive thin film therebetween having an electron-emitting region. The electroconductive thin film is coated with an additional film at the electron-emitting region to provide an additional resistance within a range from 500 .OMEGA. to 100 k.OMEGA..

Abstract: A field-emission cathode comprises a substrate having a conductive surface, a gate electrode and a focusing electrode overlying the substrate with insulation layers interposed therebetween, a plurality of cavities formed by penetrating the gate electrode, focusing electrode and insulation layers, and an emitter formed in each of the cavities on the substrate for emission of an electron beam. The emitter has tip located at a level between the gate electrode and the focusing electrode, which receive therebetween a signal for modulating the electron beam at a high frequency.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: Field emitter structures are described for use in arrays forming field emission displays. The field emitter structures may be either single or perferably double-gate structures. To enhance the field emission current density the emitters are formed so as to be elongate so as to form a race-track shape. The emitter layer may also be provided with sharply defined edges in order to improve electron emission.

Abstract: A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

Abstract: A field emission display device and a fabrication method thereof, by which a vacuum sealing can be simple, and electric and optical characteristics between pixels can be improved by achieving a device package by means of a junction between substrates in vacuum without a spacer, which includes a semiconductor substrate having a groove having a predetermined depth; an n-well formed on the semiconductor substrate under the bottom of the groove; an emitter formed on the n-well; an insulation film formed on a portion of the semiconductor substrate, in which the groove is not formed; a transparent electrode bonded to the upper portion of the insulation film; a light emitting layer arranged on the upper portion of the emitter and formed within the transparent electrode; and a glass substrate formed on the transparent electrode.

Abstract: In a field emission electron gun including emitters (104) on predetermined parts of a substrate (109), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode and to have an outer peripheral surface defining an emission region (E), a gate edge portion (106) of a conductor is formed on the insulator film to surround the outer peripheral surface of the first gate electrode in contact with the outer peripheral surface of the first gate electrode. A second gate electrode (102) is formed on the insulator film to surround the gate edge portion with a distance left between the gate edge portion and the second gate electrode applied with a second voltage less than a first voltage applied to the first gate electrode.

Abstract: A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.

Abstract: A cold-cathode emitter includes a high-voltage tank of a second conductivity that is formed in a substrate having a first conductivity. An emitter tip is integral with the tank and extends outwardly from the substrate. The tank forms either a drain region or a collector region of a transistor. A cold-cathode emitter device includes a drive transistor formed in a substrate of a first conductivity. The transistor includes an electron receive region of a second conductivity. An emitter tip is integral with the electron receive region and extends outwardly from the substrate.

Abstract: The present invention provides for a field emission device including an anode assembly and a cathode assembly, wherein the cathode assembly further includes a substrate, a plurality of electrically conducting strips deposited on the substrate, and a continuous layer of diamond material deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips. The field emission device may further include a grid assembly including a perforated silicon substrate, a first dielectric layer deposited on the silicon substrate, and a first conducting layer deposited on the first dielectric layer, wherein the first dielectric layer and the first conducting layer have perforations coinciding with perforations of the silicon substrate.

Abstract: A field emission cathode includes a first electron-emitting structure having a first cathode electrode (3), a first gate electrode (5), a first insulating layer (4) separating the first cathode electrode (3) from the first gate electrode (5), and at least one first emitter tip (9) disposed in a hole formed in the first gate electrode (5) and the first insulating layer (4) to expose a portion of the first cathode electrode (3); and a second electron-emitting structure surrounding and insulated from the first electron-emitting structure wherein the second electron-emitting structure has a second cathode electrode (6), a second gate electrode (8), a second insulating layer (7) separating the second cathode electrode (6) from the second gate electrode (8), and at least one second emitter tip (10) disposed in a hole formed in the second gate electrode (8) and the second insulating layer (7) to expose a portion of the second cathode electrode (6).

Abstract: A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions.

Abstract: An edge emitter display device is provided comprising an anode (1) and a cathode (2). Cathode (2) is situated at a level above and laterally displaced from anode (1), providing an opening for a window above anode (1). Cathode (2) has an emitting edge (4) which is operable to emit field electrons when a positive voltage is applied to anode (1) with respect to cathode (2). A phosphor layer is disposed above anode (1) and below the level of cathode (2) and is operable to luminesce when struck with the electrons emitted from the emitting edge (4).

Abstract: An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.

Abstract: There is provided a cold cathode including a substrate, a plurality of electron emitting electrodes formed on the substrate, a first insulating layer formed on the substrate and formed with a plurality of first cavities in which the electron emitting electrodes are disposed, a gate electrode formed on the first insulating layer and formed with a plurality of first openings which are in communication with the first cavities, a second insulating layer formed on the gate electrode and formed with a plurality of second cavities which are in communication with the first openings, and a focusing electrode formed on the second insulating layer and formed with a plurality of second openings which are in communication with the second cavities. At least one of central axes of the second openings and central axes of the first openings is eccentric with central axes of the electron emitting electrodes.

Abstract: A field emission cold cathode comprises an n-type silicon substrate (1), a plurality of sharp-pointed emitter cones (2) formed on the n-type silicon substrate (1), and a buried insulator layer (3) formed in the n-type silicon substrate (1) to surround each of underlying regions right under each emitter cone (2). An insulator layer (4) is formed on the n-type silicon substrate (1) and has a plurality of insulator holes so as to surround each emitter cone (2). A gate electrode (5) is formed on the insulator layer (4) and has a plurality of gate holes for extracting electrons from the emitter cones (2).

Abstract: There is disclosed a long-lived thermal field emission electron gun for use in a scanning electron microscope. The gun has a tungsten tip. The surface of this tip is coated with zirconium, zirconium oxide, titanium or titanium oxide. A wire member is mounted above the front end of the tungsten tip to prevent the coating of zirconium or other material from slipping off.

Abstract: A field emission cold-cathode device has a supporting substrate, and an emitter for emitting electrons disposed on the supporting substrate. The supporting substrate is essentially formed of a transparent synthetic resin. The emitter is formed by molding a portion of a conductive material layer such as Au which has been disposed on the supporting substrate into a conical shape. The conductive material layer functions also as a cathode wiring. An engaging concave portion is formed on a surface of the emitter to be bonded with the supporting substrate. In conformity with this engaging concave portion, a convex portion is integrally formed on the supporting substrate so as to be hermetically fitted in the engaging concave portion.

Abstract: The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.

Abstract: A field emitter for producing an electron beam includes at least one cold cathode unit. Each of the cold cathode units includes an emitter cone having an emitter tip and a gate spaced apart from the emitter tip for extracting electrons from the emitter tip in a propagation direction upon application of a positive dc voltage on the gate with respect to the emitter tip. The gate forms a gate cavity for propagation of the extracted electrons therethrough. Each of the cold cathode units further includes at least one lens electrode disposed further in the propagation direction from the emitter tip than the gate, the at least one lens electrode forming at least one lens cavity for propagation of the extracted electrons therethrough. The at least one lens electrode is for focusing the extracted electrons in part of the gate cavity, part of the at least one lens cavity, and part of the region therebetween.

Abstract: A cathodoluminescent field emission display device features an enhancement layer disposed over at least selected portions of an outer surface of an extraction grid of the device. The enhancement layer provides enhanced secondary electron emissions. The enhancement layer is preferably near mono-molecular film of an oxide of barium, beryllium, calcium, magnesium, strontium or aluminum.

Abstract: A field emission display device of the type driven on a high anode voltage to accelerate effectively emitted electrons to the anode, thus providing high brightness as well as no leakage of glowed light. Cone emitters are formed on the cathode electrode laying on a cathode substrate. An insulating layer as well as first gate electrodes are formed on the portions where the emitters are not formed. Another insulating layer if formed on the first gate electrodes. Second gate electrodes (or focusing electrodes) with openings are formed over the first gate electrodes. Plural lines of the emitters are formed in parallel in the emitter area corresponding one pixel. The emitters are aligned to each of the openings. An anode voltage of 2kV to 5kV is applied to the anode electrode (not shown). The electrons from the emitters are focused by the focusing electrode and the reaches the anode electrode.

Abstract: A micropoint assembly is disclosed that includes a micropoint and a switch coupled to the micropoint. The switch is operable to activate and deactivate the micropoint and includes a nitride oxidation layer. The switch may be a MOSFET with a gate oxide that contains the nitride oxidation layer. In such configuration, the nitride oxidation layer contains the greatest concentration of SiN within the gate oxide. A method for constructing the micropoint assembly and field emission displays incorporating the micropoint assembly is also disclosed. Such method includes simultaneous annealing of the nitride oxidation layer during conventional FED fabrication steps.

Abstract: In an image display apparatus which has a multi-electron beam source in which a plurality of electron emission elements are connected in a matrix pattern using a plurality of data electrodes and a plurality of scanning electrodes, and a fluorescent screen having phosphors of three primary colors R, G, and B corresponding to the electron emission elements, natural white color emission is obtained while suppressing a decrease in G luminance, using, e.g., a checkerboard layout which has a G spatial resolution higher than the R or B spatial resolution and includes more G phosphors than the R or B phosphors.

Abstract: 0504221609 Nanometer-scale field emitter tips are fabricated on a single crystal silicon substrate and an optically active semiconductive material is deposited on the tip. A bias voltage is connected between the semiconductor and the substrate to cause the optically active material to emit light.

Abstract: A method of fabricating an emitter plate 12 for use in a field emission device comprising the steps of providing an insulating substrate 18 and forming a first conductive layer 13 on the insulating substrate 18. This is followed by the steps of forming an insulating layer 20 on the first conductive layer 13 and forming a second conductive layer 22 on the insulating layer 20. Then, a plurality of apertures 34 are formed through the second conductive layer 22 and through the insulating layer 20. A lift-off layer 36 is then formed on the second conductive layer 22. The lift-off layer 36 is formed by a plating process wherein the plating bath has a pH between 2.25 and 4.5, and current densities of 1 to 2O mA/cm.sup.2. The method may further comprise depositing conductive material through the plurality of apertures 34 to form a microtip 14 in each of the plurality of apertures 34. The excess deposited conductive material 14' and the lift-off layer 36 are then removed from the second conductive layer 22.

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.

Abstract: An electron field emission device includes a field emissive cathode which may include a plurality of sharp field emitter tips 2. First and second grids 4 and 7 are located between the cathode and an anode. The grids comprise parallel strips of electrically conductive material, those of the first grid being arranged orthogonal to those of the second. Applications of suitable voltages to the grids enable selected regions of the cathode to be made electron emissive and produce collimated electron beams. The anode may be phosphor coated to produce a visible display or an infra-red image may be produced. Relatively low voltages may be used to switch the regions on and off. As the beams are collimated, the anode may be located a relatively large distance from the cathode, enabling high voltage phosphors to be used.

Abstract: A structure and method for forming an anodized row electrode for a field emission display device. In one embodiment, the present invention comprises depositing a resistor layer over portions of a row electrode. Next, an inter-metal dielectric layer is deposited over the row electrode. In the present embodiment, the inter-metal dielectric layer deposited over portions of the resistor layer and over pad areas of the row electrode. After the deposition of the inter-metal dielectric layer, the row electrode is subjected to an anodization process such that exposed regions of the row electrode are anodized. In so doing, the present invention provides a row electrode structure which is resistant to row to column electrode shorts and which is protected from subsequent processing steps.

Abstract: A field emission display (100) includes a cathode plate (104) having a plurality of electron emitters (112) and ballast resistors (118), an anode plate (120) having an anode (124), and a temperature compensation circuit (130) having an input (142), an output (134), and a current output (138). Input (142) is connected to unregulated voltage (132), output (134) is connected to gate (116), and current output (138) is connected to temperature sensing element (148). Preferably, temperature sensing element (148) is mounted on cathode plate (104) and matches the temperature vs. resistance characteristics of ballast resistors (118). Temperature compensation circuit (130) outputs current (220) to temperature sensing element (148) and receives ballast voltage (230) from temperature sensing element (148) as a function of temperature of cathode plate (104).

Abstract: An image forming apparatus includes a substrate, an electron-emitting device, a wiring electrode for applying an input signal to the electron-emitting device, and an image forming member to which an electron emitted from the electron-emitting device is irradiated. An acceleration electrode is provided opposite to the substrate, and a potential defining electrode is provided between the acceleration electrode and the substrate. A second support member connects the potential defining electrode and the acceleration electrode, and a first support member connects the wiring electrode and the potential defining electrode. The second support member has a semiconductive material surface, and the first support member has a resistance greater than that of the second support member by ten times or more.

Abstract: An electron source comprises a substrate, a row wire and a column wire disposed on the substrate, and an electron-emitting element connected to both the row and column wires. The electron-emitting region of the electron-emitting element is surrounded by one of both the row and column wires.

Abstract: An electron emitter element is provided which comprises: an insulating base having a gate opening and a slit communicating to the gate opening; an emitter electrode layer formed in the gate opening and the slit on the insulating base; an emitter tip formed in the gate opening on the emitter electrode layer; a gate electrode layer formed on a top surface of the insulating base as circumscribing the gate opening and extending perpendicular to the emitter electrode layer; and the gate electrode layer and the emitter electrode layer being crossed each other with nothing interposed therebetween.

Abstract: A field-emission cold cathode has a conductive cold-cathode substrate on which a plurality of conical emitters and a base insulator layer are formed. A ring-shaped gate electrode, a plate-shaped inner electrode, and a ring-shaped outer electrode are formed on the base insulator layer with the ring-shaped gate electrode disposed between the plate-shaped inner electrode and the ring-shaped outer electrode. A voltage supplying unit supplies the ring-shaped gate electrode, the plate-shaped inner electrode, and the ring-shaped outer electrode with a gate voltage, an inner electrode voltage, and an outer electrode voltage, each referenced to a substrate potential of the conductive cold-cathode substrate, wherein the gate voltage is higher than each of the inner electrode voltage and the outer electrode voltage.

Abstract: A vacuum microdevice includes a first electrode, an insulating film, and a second electrode. The first electrode projects in a current radiation region on a substrate and has a sharp tip. The insulating film is formed on the surface of the first electrode except the tip of the first electrode. The second electrode is formed on the insulating film and has an electrode thickness which increases away from the tip of the first electrode.

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract: An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A), a focus coating (39 or 39A), and an access conductor (106 or 116). The focus coating overlies the base focusing structure and extends into a focus opening (40). The access conductor is electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor. The focus coating is typically formed by an angled deposition technique.

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc.

Abstract: A field emission display includes a substrate with a plurality of cathode layers provided thereon. A plurality of micro tips are provided on each of the cathode layers. A plurality of gate insulating layers are also provided on the cathode layers, each of the gate insulating layers having a plurality of holes for accommodating each unit of the micro tips. A plurality of gate electrodes are provided on the gate insulating layers, each of the gate electrodes having a plurality of holes corresponding to each hole of the plurality of gate insulating layers, each of the plurality of gate insulating layers and each of the plurality of gate electrodes being alternately provided on each other.