Abstract: A field emission display having a focusing grid disposed between the anode and a plurality of cathodes. The focusing grid comprises a conductive sheet having an array of apertures formed therein. Each one of the cathodes comprises a set of field emitters. Each aperture is associated with a corresponding set of field emitters. The conductive sheet is disposed over the corresponding set of field emitters. The sheet is supported at the periphery thereof by a frame with the interior portion of the sheet suspended in tension by the frame thereby supporting the grid substantially equidistant over the sets of field emitters. A method is provided for supporting the sheet in tension by the frame includes the steps of providing a clamp having a pair of apertured members. A first member has a groove disposed about the periphery of such member. A ring member is provided.

Abstract: An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.

Abstract: A method of manufacturing a field emission element including the steps of: forming a conductive film on an antireflection film; forming a resist pattern on the antireflection film through photolithography; forming holes through the antireflection film and conductive film by using the resist pattern as a mask; removing the resist pattern, depositing a first sacrificial film over a substrate and etching back the first sacrificial film to leave a side spacer on an inner wall of the hole of the conductive film; depositing a second sacrificial film over the substrate and forming a conductive emitter electrode on the second sacrificial film; and partially removing the second sacrificial film to expose a tip portion of the emitter electrode. This method can form a gate hole at a high precision in size.

Abstract: An electron source includes a plurality of electron emitting devices arranged in a matrix, and an image forming apparatus uses the electron source. Each of the row-direction wirings of the electron source is selected sequentially and a scan signal is applied thereto, and in synchronization of the scan signal, a modulation signal corresponding to an image signal is applied to the column-direction wiring. The row- and column-direction wirings of the electron source are connected by a connection cable having an impedance substantially equal to a characteristic impedance of a driving area of the electron source, thereby preventing signal ringing in the inputted scan signals and modulation signals. In place of the connection cable, a damping resistance having a resistance value substantially equal to the characteristic impedance may be connected in serial to each of the column- or row-direction wirings, to prevent the signal ringing.

Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Abstract: An electron-emitting source of this invention includes at least a carbon nanotube formed from a columnar graphite layer. Electron are emitted from the tip of the carbon nanotube.

Abstract: There is provided a field emitter capable of efficiently maintaining the temperature of an emission point at a constant temperature. Electrons are supplied to the emission point for emitting electrons, through both two routes which are composed of a first cathode in contact with a first cathode base conductor, and a second cathode, respectively. The first cathode and the second cathode are contacted at the emission point. The first cathode and the second cathode are insulated from each other by using a conical insulator layer. A gate metal film is provided for applying a strong electric field to the emission point. A gate metal film, the second cathode and the first cathode base conductor are connected to a gate applying wiring conductor, a second cathode wiring conductor and a first cathode wiring conductor, respectively.

Abstract: The present invention includes field emission devices and methods of forming field emission devices. According to one aspect of the invention, a field emission device includes a substrate; at least two adjacent and spaced emitters extending from the substrate; a conductor spaced from the substrate and configured to receive an electrical charge to control the emission of electrons from the at least two adjacent and spaced emitters; and a plurality of spaced insulative conductor supports positioned between the conductor and the substrate, and intermediate the at least two adjacent and spaced emitters.

Abstract: A method of manufacturing a field emission element including the steps of: forming a conductive film on an antireflection film; forming a resist pattern on the antireflection film through photolithography; forming holes through the antireflection film and conductive film by using the resist pattern as a mask; removing the resist pattern, depositing a first sacrificial film over a substrate and etching back the first sacrificial film to leave a side spacer on an inner wall of the hole of the conductive film; depositing a second sacrificial film over the substrate and forming a conductive emitter electrode on the second sacrificial film; and partially removing the second sacrificial film to expose a tip portion of the emitter electrode. This method can form a gate hole at a high precision in size.

Abstract: A method and structure are provided for simultaneously fabricating polysilicon cones for a field emitter and a porous insulating oxide layer for supporting a gate material. The porous insulating oxide is fabricated by first making the polysilicon porous in the field regions by an anodic etch and then oxidation. This is a fully self-aligned process and only one masking is used. Shaping of the gate material in close proximity to the top of the cone is achieved by a lift-off technique and requires no special deposition techniques like depositions at a grazing incidence to improve the emitter.

Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.

Abstract: A field emission device capable of permitting a focusing electrode to be arranged around a gate electrode without any restriction. A gate electrode is arranged on an upper surface of an insulating layer of a cathode substrate-side structure and holes are formed through the insulating layer and gate electrode. A conical emitter is arranged in each of the holes. The insulating layer is formed on the upper surface thereof with a focusing electrode so as to surround the gate electrode. The insulating layer is formed on a lower surface thereof with a connection line, a resistive layer and a cathode electrode line. The gate electrode is electrically connected to the connection line through a contact hole and a gate electrode line is electrically connected to the connection line through another contact hole.

Abstract: Cathodoluminescent field emission display devices features a radioactive cathode emitter which is used to produce primary electron emissions to drive the FED device. Radioactive emitters eliminate the need for complex emitter structures, such as conventional Spindt cathodes. In addition, the use of a radioactive emitter allows for an “all-firm” FED, and thus represents an improvement over existing devices by reducing emitter to phosphor spacing, as well as eliminating the use of internal vacuums.

Abstract: An electron emitter comprising a textured silicon wafer overcoated with a thin (200 Å) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Abstract: An electron-emitting device contains a lower conductive region (22), a porous insulating layer (24A, 24B, 24D, 24E, or 24F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (30, 30A, or 30B) situated in pores (281) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (22A) and an overlying highly resistive portion (22B). Alternatively or additionally, a patterned gate layer (34B, 40B, or 46B) overlies the porous layer. Openings (36, 42, or 541) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.

Abstract: An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the substrate in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

Abstract: An energy dispersive x-ray and gamma-ray photon counter is described. The counter uses a photon sensor which incorporates a unique photocathode called Advanced Semiconductor Emitter Technology for X-rays (ASET-X) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electrons are multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be energy resolved very accurately, to within ionization statistics. Because the signal is already above the sensor noise it does not have to be noise filtered therefore allowing high-speed counting. The photon sensor can also be used as a device to visualize and image gamma-ray and x-ray sources.

Abstract: A micro vacuum tube includes a disk (7) having an axis and formed of successive planar layers of a first conductive layer (2), a first dielectric layer (3), a second conductive layer (4), and a second dielectric layer(5), a hole along the axis of the cylinder extends through the first dielectric layer (3), the second conductive layer (4), and the second dielectric layer (5), a cusp shaped microtip (62) centrally located over, and extending into, the hole is separated from and supported by, a pole (75) that rests on the second dielectric layer, and a cap (82) seals the microtip, the pole (75) and the hole in a permanent vacuum environment.

Abstract: A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field emission gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.

Abstract: An electron-emitting device comprises a pair of oppositely disposed device electrodes and an electroconductive film electrically connecting the device electrodes and having an electron-emitting region formed as part thereof. The electroconductive film is partly or entirely covered by a metal oxide coat containing as principal ingredient with a melting point higher than that of the material of principal ingredient of the electroconductive film. The electroconductive film has also a deposited layer comprising carbon, a carbon compound or a mixture thereof.

Abstract: A field emission display (10) includes an emission tip (16), an insulating layer (18) having composite insulating layers (18A-18C), and a conductive gate (20). The composite insulating layers (18A-18C) include a selectively etchable insulating layer (18B), and reduce leakage current from the base of the emission tip (16) to the gate (20).

Abstract: Laser-assisted chemical vapor deposition is used to form spacers at desired locations in a field emission display. The spacers can be designed with different shapes to provide increased strength and also to be formed differently depending on the their location on the display.

Abstract: A flat-panel field emission display comprises a luminescent faceplate, a rigid backplate, and an interposed or sandwiched emitter or cathode plate. A positioning spacer or connector ridge is formed on the rear surface of the faceplate to space the cathode plate a fixed distance behind the faceplate. A peripheral seal is formed between the faceplate and the backplate. The faceplate, backplate, and peripheral seal define an evacuated internal space which contains the cathode plate. The backplate is spaced behind the cathode plate to create a rearward vacuum space in which a getter is located.

Abstract: The present invention relates to a flat display screen, comprising a cathode with electron emission microtips associated with a grid for extracting electrons from the microtips, the cathode/grid comprising conductive grid or cathode lines adapted to being sequentially addressed, and cathode or grid columns perpendicular to the lines and adapted to being addressed individually and simultaneously during the addressing of a line, and the screen comprising a return electrode adapted to being biased to a return potential corresponding to a no electron emission potential, each grid or cathode line being connected, via at least one resistive element, to the return electrode.

Abstract: An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed. The display cell structures may also have one or more gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A cell may have more than one phosphor, and in particular may have red, green, and blue phosphors selectively arranged. Each pixel site may have one anode of each color phosphor. The phosphors are preferably prepared in situ in an electrically-conductive thin-film or surface-layer form during fabrication of the display. A preferred fabrication process integrates an etch stop with the in situ phosphor process, the etch stop precisely defining the depth of an opening in the display cell structure.

Abstract: A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.

Abstract: A field emission cold cathode sends forth uniform emission over the entire emission area and realizes, when applied to a flat screen display device and the like, a uniform brightness of images over the entire display area, providing a high quality field emission type cold cathode. An electron tube is equipped with the cold cathode. The cold cathodes structurally prevent a prolonged electric discharge with the use of trenches. Non-uniformity of resistance, resulting from the difference in extension of the depletion regions in each block divided by the trenches, can be prevented by an arrangement of blocks in which each block divided by trenches is placed to have a prescribed distance from an adjacent block, which makes emission currents in all blocks within the formed emitter area uniform at the time of normal operation, and thereby a good form in which depressions in the block corner sections are well suppressed can be obtained.

Abstract: A field emission display device includes groupings of microtip emitters 14 which are energized by applying a negative potential to cathode 16 relative to the signal electrode 22, thereby inducing an electric field which draws streams of electrons 38 from the apexes of microtips 14. Electrons 38 emitted from microtips 14 impinge upon extraction plate 36 causing emission of a secondary stream of electrons 40 which are accelerated toward anode 40. Apparatus and methods for controlling these primary and secondary electron streams are described.

Abstract: The present invention relates to a flat display screen cathode of the type including, on a substrate, columns of cathode conductors which can be biased individually and associated with a resistive layer on which are deposited electron emission microtips, and including means for canceling a possible lateral electric field between two neighboring columns brought to different potentials.

Abstract: An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode.

Abstract: A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel.

Abstract: A field emission display and method of fabricating same in which the emitters are fabricated on a polysilicon layer that is deposited on top of a relatively thick oxide insulating layer. The polysilicon layer extends into gaps formed in the insulating layer to make contact with a conductive layer deposited on a nonconductive substrate. Because of the spacing between the substrate and the polysilicon layer provided by the insulating layer, the conductive layer can extend beneath the emitters to periodically make contact with the polysilicon layer through spaced-apart gaps in the insulating layer. A thin oxide insulating layer is formed over the polysilicon layer, and a second polysilicon layer is then deposited over the thin oxide layer to form an extraction grid.

Abstract: A cathode device comprising a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.

Abstract: A design for a field emission device comprising a cold cathode emitter, a control gate and a focus gate, is discussed. The focus gate is connected to the emitter voltage source and a ballast resistor is inserted between this connection point and the emitter. This ensures that the focus gate will always be more negative than the emitter, this difference in potential increasing with increasing emitter current. This leads to a linear current-voltage characteristic for the device and also makes for a tighter electron beam than that provided by designs of the prior art, A physical realization of the design is described along with a cost effective method for manufacturing said physical realization.

Abstract: A ceramic substrate for mounting a field emission cathode is secured on the lower surface of a metal flange for assembly of an electron lens of a cathode ray tube, and the mounting position of the field emission cathode on the ceramic substrate is determined with reference to the metal flange.

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

Abstract: A method for forming a field emission flat panel display includes deposit a conductive patterned layer on a substrate, depositing an emitter material over the patterned layer, patterning the emitter material to provide a series of mask caps, etching the emitter material to provide arrays of emitter peaks with the mask caps thereon, depositing a dielective layer on the patterned layer and on the mask caps, depositing a conductive gate layer on the dielectric layer, depositing a high-resistivity dielectric layer on the gate layer, depositing a low-resistivity dielectric layer on the high-resistivity dielectric layer, and etching away portions of the dielectric layer, gate layer, high-resistivity dielectric layer and low-resistivity dielectric layer to expose the mask caps, and removing the mask caps to expose the emitter peaks to provide an emitter cathode panel, providing a transparent panel having a conductive coating thereon, and depositing a layer of thin film phosphors on the conductive coating to provide

Abstract: A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).

Abstract: A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

Abstract: A display screen which includes a microtip electron source which is observerable through the microtip support. The screen includes a cathodoluminescent anode, transparent support and cathode conductors formed on the support. The conductors are meshed according to a first pattern which includes openings. A resistive layer formed on the support is meshed according to a second pattern and includes solid areas located in the openings of the first pattern. Microtips are formed on the solid areas. Grids are meshed according to the second pattern in an unmeshed insulating layer which is transparent and extends above the cathode conductors and the resistive layer in between them and the grids.

Abstract: A thermal field emission cathode comprising a tungsten single crystal having an axis direction of <100> and a coating layer of zirconium and oxygen formed thereon, wherein a source for supplying zirconium and oxygen contains an element capable of forming cubic or tetragonal zirconium oxide at an operation temperature of the thermal field emission cathode.

Abstract: A field emission element in which a cathode substrate and an anode substrate are spaced from each other and are hermetically sealed. The field emission element comprises cathode electrodes and gate terminals formed on the cathode substrate; an insulating layer overlaying the cathode electrodes and the gate electrodes, the cathode electrodes and the gate terminals being partially extracted outward from the insulating layer, gate electrodes formed on the insulating layer, wherein the gate electrodes are arranged so as to cross said cathode electrodes at intersections, openings each being formed through a cathode electrode and an insulating layer at each of the intersections, a resistance layer at least formed on a part of each of the cathode electrodes, and emitter electrodes each electrically connected to a cathode electrode via the resistance layer formed within an opening.

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium.

Abstract: A unified fibrous field emission element is provided including a conductive fibrous central core element having an insulating material directly thereon the conductive fibrous central core element and a gate electrode directly thereon the insulating material, the conductive fibrous central core element further including emission sites situated longitudinally along the length of the conductive fibrous central core element.

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the resent invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).

Abstract: A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled.

Abstract: A cathode (1) includes a substrate (10), a resistive layer (11) disposed on the substrate (10); at least one cathode conductor (13), and microtips (2) disposed on the resistive layer (11), wherein the cathode conductor (13) has circular wells (17) in the middle of each of which a microtip (2) is disposed, whereby the microtips (2) are electrically isolated from the cathode (13) by a constant access resistance.