With Accelerating Or Control Electrode Patents (Class 313/497)
  • Patent number: 7615919
    Abstract: A field emission device (10) includes a sealed container (12) with a first light-permeable portion (120) and an opposite second light-permeable portion (122). A first phosphor layer (14) is formed on the first light-permeable portion. A first light-permeable anode (16) is formed on the first light-permeable portion. A second phosphor layer (18) is formed on the second light-permeable portion. A second light-permeable anode (20) is formed on the second light-permeable portion. A shielding barrel (22) is disposed within the container and electrically connected to at least one cathode electrode (25, 26). The shielding barrel has opposite open ends facing toward the first and the second light-permeable portions respectively. The shielding barrel has an inner surface, and a slurry layer (24) containing conductive nano material is formed on the inner surface of the shielding barrel.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: November 10, 2009
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan-Chao Yang, Jie Tang, Liang Liu, Shou-Shan Fan
  • Patent number: 7615916
    Abstract: An electron emission device adapted to enhanced electron beam focusing and its method of fabrication are shown. The device includes driving electrodes for controlling the emission of electrons from electron emission regions formed on a substrate; two or more tiers of insulating layers formed on the driving electrodes; and a focusing electrode formed over the tiers. A multi-tiered insulating layer allows a thick tier to hold the focusing electrodes away from the emission regions, thus enhancing their focusing impact, while a thin tier under the focusing electrodes remains amenable to intricate patterning. Fabrication of the tiers from material with different etching rates allows thicker lower support tiers to be etched during the same period and in the same step that a thinner upper tier is etched, also allowing openings in a lower tier to widen while openings in the upper tier stay small.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: November 10, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Kyung-Sun Ryu
  • Patent number: 7612493
    Abstract: An electron emission device for focusing the electrons emitted from electron emission regions and uniformly controlling the pixel emission characteristic. The electron emission device includes first and second substrates facing each other, and cathode electrodes having first electrode portions formed on the first substrate along one side thereof, and second electrode portions spaced apart from the first electrode portions at a predetermined distance. Electron emission regions are formed on the second electrode portions. Focusing electrodes fill the gap between the first and the second electrode portions while being extended toward the second substrate with a thickness greater than the thickness of the electron emission regions. Gate electrodes are formed on the cathode electrodes by interposing an insulating layer with openings exposing the electron emission regions.
    Type: Grant
    Filed: April 28, 2005
    Date of Patent: November 3, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Seong-Yeon Hwang
  • Patent number: 7612494
    Abstract: An image display apparatus includes a face plate having a phosphor and an accelerating electrode laminated on the phosphor, and a rear plate having an electron-emitting device emitting an electron to a partial region of the phosphor. An average thickness of the accelerating electrode laminated on the phosphor of a non-irradiation region not to be subjected to an irradiation with the electron emitted from the electron-emitting device, is larger than an average thickness of the accelerating electrode laminated on the phosphor of an irradiation region to be subjected to the irradiation with the electron emitted from the electron-emitting device.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: November 3, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yasushi Shioya
  • Patent number: 7608990
    Abstract: This invention provides an anode plate structure for a flat panel light source of field emission. The structure for the flat panel light source includes an anode plate structure in addition to a known cathode plate structure. The anode plate structure comprises an anode plate and a fluorescent layer formed on the anode plate. The flat panel light source utilizes a cubic-bump structure of the fluorescent layer or a rough surface of the anode plate to increase the lighting areas per unit volume, thereby enhancing the lighting effect of the light source. In the embodiments of the flat panel light source, the rough surface of the anode plate may be formed with a plurality of cubic-bumps, or have a shape of plural concave lenses.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: October 27, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hung Lin, Yu-Yang Chang, Wei-Yi Lin, Cheng-Chung Lee
  • Patent number: 7602115
    Abstract: An electrode system with a current feedthrough through a ceramic discharge vessel is provided which, on one hand, increases the visible output of lamps and, on the other hand, allows smaller dimensions. For this purpose, the current feedthrough is made of rhenium or a platinum-group metal. In this way, improved color reproduction is also achievable. In preferred embodiments: (a) the current feedthrough is made of rhenium or a rhenium alloy or a platinum-group metal or a platinum-group metal alloy and the current feedthrough is brazed flush in the discharge vessel, (b) the discharge vessel has no shaft, and/or (3) the current feedthrough is in the form of one or more joined spheres.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: October 13, 2009
    Assignee: W.C. Heraeus GmbH
    Inventors: Reinhold Weiland, Harald Manhardt, David Lupton
  • Patent number: 7598668
    Abstract: An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: October 6, 2009
    Assignees: Kyoto University, Pioneer Corporation, Hitachi, Ltd., Mitsubishi Chemical Corporation, Rohm Co., Ltd.
    Inventors: Takahito Oyamada, Chihaya Adachi
  • Patent number: 7594841
    Abstract: A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.
    Type: Grant
    Filed: June 2, 2004
    Date of Patent: September 29, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Rong Sheu, Ching-Hsun Chao, Liang-You Jiang, Yu-Yang Chang, Cheng-Chung Lee
  • Patent number: 7592743
    Abstract: A miss landing measure on a face plate of electrons emitted from electron-emitting devices by the warping of a rear plate and the face plate accompanying heat processes, such as seal bonding, is provided. Initial velocity vectors of electrons emitted from an electron-emitting area of an electron-emitting device formed on the rear plate has a distributed tendency according to an in-plane distribution of normal line directions of the rear plate so that the electrons emitted from each of the plurality of electron-emitting devices may irradiate each of the plurality of light emitting portions, corresponding to each of the electron-emitting devices, formed on the face plate.
    Type: Grant
    Filed: December 14, 2005
    Date of Patent: September 22, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Yamatoda, Mitsutoshi Kuno
  • Patent number: 7586260
    Abstract: A non-evaporation getter material suitable for non-evaporation getters disposed in electron devices, such as fluorescent luminous tubes. The getter material is sized and shaped to more efficiently absorb gases actively at low temperatures.
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: September 8, 2009
    Assignees: Futaba Corporation, Neturen Co., Ltd.
    Inventors: Takeshi Tonegawa, Shigeo Itoh, Sadanori Takayama, Masateru Taniguchi, Yasumoto Kubo, Kenji Nawamaki, Youhei Fujimura, Mamoru Namikawa, Yoshihisa Marushima, Osamu Idohara, Yoshiaki Inoue, Seiji Yokota, Kazuhiro Kawasaki
  • Patent number: 7583015
    Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: September 1, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Koki Nukanobu, Keisuke Yamamoto, Tamaki Kobayahsi, Takuto Moriguchi
  • Patent number: 7569986
    Abstract: An electron emission display includes first and second substrates facing each other to form a vacuum envelope, a plurality of driving electrodes formed on the first substrate, a plurality of electron emission regions controlled by the driving electrodes, a focusing electrode disposed on and insulated from the driving electrodes and provided with first openings through which electron beams pass, a plurality of phosphor layers formed on a surface of the second substrate, an anode electrode formed on surfaces of the phosphor layers, and a plurality of spacers for maintaining a gap between the first and second substrates. The focusing electrode includes second openings for forming a potential control unit for forming a potential well, the potential control unit being formed between the first openings to correspond to the spacers. The potential well attracts the electron beams, improving the directionality of the beams.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: August 4, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Eung-Joon Chi, Seung-Joon Yoo, Cheol-Hyeon Chang
  • Patent number: 7564178
    Abstract: A method for forming high density emission elements for a field emission display and field emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes as practiced in the prior art. The emission elements formed according to the present invention provide a more uniform emission of electrons than the prior art techniques. Further, a display incorporating emission elements formed according to the present invention provides increased brightness.
    Type: Grant
    Filed: February 14, 2005
    Date of Patent: July 21, 2009
    Assignee: Agere Systems Inc.
    Inventors: Seong Jin Koh, Gerald W. Gibson, Jr.
  • Patent number: 7564065
    Abstract: The present invention provides in one embodiment a light emitting device that has a high efficacy even in a range of low color temperatures, a long-term reliability, and an improved color rendering property. In addition, the present invention provides in another embodiment a lighting apparatus using such a light emitting device. In the light emitting device, a mixture of a first phosphor material that emits yellow green, yellow or yellow orange light and a second phosphor material that emits light having a longer wavelength than the first phosphor material, for example, yellow orange or orange light is used as a phosphor. The first phosphor material is represented by a general formula Cax(Si, Al)12(O, N)16:Euy2+ and a main phase thereof has an alpha-SiAlON crystal structure.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: July 21, 2009
    Assignees: Fujikura Ltd., National Institute for Materials Science
    Inventors: Ken Sakuma, Naoto Hirosaki
  • Patent number: 7550912
    Abstract: The time required for an interferometric modulator to switch from a state with a collapsed cavity to a state with an open cavity or vice versa, i.e., the switch time, is decreased by decreasing the viscosity of the gas filling the cavity. The viscosity is decreased by forming at least a partial vacuum in the cavity. The partial vacuum is formed, in turn, by forming a cavity in a housing holding the interferometric modulator. The vacuum can be generated by a vacuum pump. By decreasing the switch time, interferometric modulators in an array of interferometric modulators can be switched more quickly, thereby advantageously increasing the refresh rate for a display using the array.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: June 23, 2009
    Assignee: IDC, LLC
    Inventor: Clarence Chui
  • Patent number: 7548018
    Abstract: An electron emission device includes first and second substrates facing each other while a vacuum space is interposed therebetween. An electron emission array is formed on the first substrate to emit electrons toward the second substrate, and phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers, and receives the voltage required for accelerating electron beams from the electron emission array. A grid electrode is disposed between the first and second substrates and is closer to the second substrate than to the first substrate. The grid electrode has electron beam passage holes, and receives a voltage lower than a location reference voltage.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: June 16, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Seung-Hyun Lee
  • Patent number: 7545090
    Abstract: A novel field emission display (FED) and a novel method for making the same. The FED includes a substrate, a cathode electrode and a focus electrode formed on the same level with each other on the substrate, an insulation layer formed on the cathode electrode and the focus electrode such that the cathode electrode and the focus electrode are partially exposed through the insulation layer, a field emitter formed at the cathode electrode exposed by the insulation layer, and a gate electrode formed on the insulation layer. The field emitter being formed on the same layer and of the same material and at the same time as the cathode electrode.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: June 9, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: In-Taek Han, Tae-Sik Oh
  • Patent number: 7545091
    Abstract: An electron emission device includes first electrodes arranged on a substrate in a direction of the substrate, and an insulating layer arranged on an entire surface of the substrate and covering the first electrodes. Second electrodes are arranged on the insulating layer and are perpendicular to the first electrodes. Electron emission regions are connected to one of the first and the second electrodes. The lateral edges of the first electrodes and the lateral edges of the second electrodes respectively cross each other.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: June 9, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Byong-Gon Lee, Sang-Jo Lee, Sang-Ho Jeon, Sang-Hyuck Ahn, Su-Bong Hong, Chun-Gyoo Lee
  • Patent number: 7541732
    Abstract: An electron emission device includes components for inhibiting the diffusion of electron beams, decreasing the light emission of incorrect colors, and preventing the diode type electron emission due to the anode electric field. In particular, the electron emission device includes a substrate with grooves, and electron emission regions filling the grooves. Cathode electrodes are provided at the substrate such that the cathode electrodes are electrically connected to the electron emission regions. Gate electrodes are formed over the cathode electrodes while interposing an insulating layer.
    Type: Grant
    Filed: February 24, 2005
    Date of Patent: June 2, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Sang-Hyuck Ahn
  • Patent number: 7531950
    Abstract: A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: May 12, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-Jun Park, Tae-Won Jeong
  • Patent number: 7528539
    Abstract: An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.
    Type: Grant
    Filed: June 2, 2005
    Date of Patent: May 5, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Iwao Ohwada, Kei Sato, Nobuyuki Kobayashi, Shohei Yokoyama
  • Patent number: 7518304
    Abstract: A flat panel display device includes a first substrate; an electron emission region formed on the first substrate; a second substrate located at a predetermined distance facing the first substrate and forming a vacuum vessel with the first substrate; and a light emitting region which emits light derived by electrons emitted from the electron emission source. The light emitting region includes an anode in a predetermined pattern that formed on the second substrate and a phosphor screen layered on the anode. A proportion, k between a screen weight of the phosphor screen and an average diameter of phosphor particles on the phosphor screen satisfies: k=S/(D·n) where, k ranges from 0.16 to 0.23, S is the screen weight (mg/cm2), D is the average diameter of the phosphor particles, and n is the number of accumulation layers of the phosphor powder particles on the phosphor screen.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: April 14, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Zin-Min Park, Soo-Joung Lee
  • Patent number: 7514857
    Abstract: An electron emission device includes a substrate; a cathode electrode formed on the substrate; a gate electrode crossing the cathode electrode and insulated from the cathode electrode; and an electron emission region electrically connected to the cathode electrode. The cathode electrode includes a main electrode with an inner opening portion, an isolate electrode placed in the opening portion and spaced apart from the main electrode by a distance, and a resistance layer disposed between the main electrode and the isolate electrode. The isolate electrode has a via hole. The electron emission region contacts the isolate electrode, and is placed in the via hole. The isolate electrode has a first height, and the electron emission region has a second height smaller than the first height.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: April 7, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Su-Bong Hong, Chun-Gyoo Lee, Sang-Jo Lee, Sang-Ho Jeon, Sang-Hyuck Ahn
  • Patent number: 7514858
    Abstract: An electron emission display comprising an electron collector or metal member is provided. The electron emission display comprises an electron emission substrate comprising at least one electron emission device and an image forming substrate comprising at least one emission region and at least one non-emission region. Images are formed in the emission regions by the collision of electrons emitted from the electron emission devices with the emission regions. The image forming substrate further comprises a metal layer positioned on at least the emission regions, and at least one electron collector positioned in the non-emission region. The electron collector may comprise first and second ends, wherein the first end is attached to the image forming substrate and the second end faces the electron emission substrate. The electron collector stabilizes the metal layer and fluorescent layers, thereby reducing arc and maintaining uniform brightness by re-directing scattered electrons toward the fluorescent layers.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: April 7, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Seung Joon Yoo, Jong Sick Choi, Zin Min Park, Soo Joung Lee, Jung Ho Kang, Su Kyung Lee
  • Patent number: 7511415
    Abstract: A backlight 23 of the present invention has a panel case 24 and plural phosphor-coated anode sections 25 each arranged flatly in the panel case and plural linear cathode sections 26. Each of the plural linear cathode sections 26 has a conductive wire 33 having a great number of field concentration assisting concave/convex sections 34 formed on its outer peripheral surface and a carbon-based film 35 having, as a field electron emitter, a great number of sharp microscopic sections on the field concentration assisting concave/convex sections 34, wherein the field electron emitter emits electrons toward each of the plural phosphor-coated anode sections 25 so as to be radially widespread, when DC voltage is applied between the phosphor-coated anode sections 25 and the linear cathode sections 26.
    Type: Grant
    Filed: March 11, 2005
    Date of Patent: March 31, 2009
    Assignee: Dialight Japan Co., Ltd.
    Inventor: Masanori Haba
  • Patent number: 7511414
    Abstract: A field emission display and a method of manufacturing the same are provided. The field emission display includes an anode plate where an anode electrode and a fluorescent layer are formed, a cathode plate where an electron emission source emitting electrons toward the fluorescent material layer and a gate electrode having a gate hole through which the electrons travel are formed, a mesh grid having an electron control hole corresponding to the gate hole and adhered to the cathode plate, and an insulation layer formed on a surface of the mesh grid facing the cathode plate, and spacers provided between the anode plate and the mesh grid so that the mesh grid can be adhered to the cathode plate due to a negative pressure existing between the anode plate and the cathode plate.
    Type: Grant
    Filed: December 24, 2003
    Date of Patent: March 31, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Shang-hyeun Park, Hang-woo Lee, Young-suk Cho
  • Patent number: 7511412
    Abstract: An electron emission device comprises first and second substrates facing each other and separated from each other by a distance. First and second electrodes are positioned on the first substrate such that the first and second electrodes are insulated from each other. Electron emission regions are positioned on the first substrate and are electrically connected to at least one of the first and second electrodes. An insulating layer covers the first and second electrodes. A focusing electrode is positioned on the insulating layer. The focusing electrode includes openings to allow passage of electron beams. The focusing electrode comprises a first layer having a first thickness, a second layer beneath the first layer and a third layer surrounding the first layer. The second and third layers are electrically connected and have second and third thicknesses smaller than the first thickness.
    Type: Grant
    Filed: April 28, 2005
    Date of Patent: March 31, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: You-Jong Kim
  • Patent number: 7508122
    Abstract: In a field emitter (100) including a substrate (110), the substrate (110) has a substantially non-conductive top substrate surface (112). A conductive cathode member (130) is disposed on the top substrate surface (112) and has a top cathode surface (132). A conductive gate member (120) is disposed on the top substrate surface (112) and is substantially coplanar with the cathode member (130). An emitter structure (140) extends away from the top cathode surface (132). The gate member (120) is spaced apart from the cathode member (130) at a distance so that when a predetermined potential is applied between the cathode member (130) and gate member (120), the emitter structure (140) will emit electrons.
    Type: Grant
    Filed: January 5, 2005
    Date of Patent: March 24, 2009
    Assignee: General Electric Company
    Inventor: William Hullinger Huber
  • Patent number: 7508123
    Abstract: An electron emission device includes a first substrate with an electron emission region, and a second substrate with a light emitting region. The light emitting region emits light in response to electrons emitted from the electron emission region to produce images. A phosphor layer is formed with a predetermined pattern. A black layer is formed with a predetermined pattern at a non-light-emitting region within the phosphor layer pattern on the second substrate. The black layer includes a first region of chromium oxide or an oxide of chromium and one or more metals selected from the group consisting of indium, tin, indium-tin, copper, antimony, titanium, manganese, cobalt, nickel, zinc, lead, chromium, and combinations thereof. The first region is formed on an anode. A second region of metallic chromium is formed on the first region, and a third region of chromium oxide is formed on the second region.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: March 24, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Soo-Joung Lee, Seung-Joon Yoo
  • Patent number: 7508125
    Abstract: A Field Emission Display (FED) includes: a first substrate; a cathode electrode arranged on the first substrate in a first direction; a cathode focusing electrode arranged on the cathode electrode and having a rectangular first aperture elongated in the first direction; a gate electrode having a plurality of third apertures arranged in a second direction in regions where the gate electrode overlaps the cathode electrode and connected to the first aperture; and an emitter arranged on the cathode electrode within the first aperture.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: March 24, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Tae-Sik Oh
  • Patent number: 7504768
    Abstract: A Field Emission Display (FED) includes: a first substrate; a cathode arranged on the first substrate: a conductive layer arranged on the cathode, the conductive layer including a first opening; an insulating layer arranged on the first substrate to cover an upper surface and side surfaces of the conductive layer, the insulating layer including a second opening arranged in the first opening to expose a portion of the cathode; a gate electrode arranged on the insulating layer, the gate electrode including a third opening connected to the second opening; a plurality of emitters arranged on the portion of the cathode exposed in the second opening and along both edges of the second opening, the plurality of emitters being spaced apart from each other; and a second substrate facing the first substrate and spaced apart from the first substrate, the second substrate including an anode and a fluorescent layer formed on a surface thereof.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: March 17, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Tae-Sik Oh
  • Patent number: 7504767
    Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: March 17, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
  • Patent number: 7501751
    Abstract: The present invention ensures the hermetic bonding of a support body which is interposed between a face substrate and a back substrate and is formed of a plurality of members thus easily realizing the large-sizing of a screen of a display image and, at the same time, enhancing a hermetic property holding function of the image display device. A support body is interposed between a face substrate and a back substrate while surrounding a display region and hermetically seals both substrates using a sealing material. The support body is formed by hermetically bonding a plurality of support body members each other using a bonding material which has a softening point higher than a softening point of the sealing material.
    Type: Grant
    Filed: April 23, 2007
    Date of Patent: March 10, 2009
    Assignee: Hitachi Displays, Ltd.
    Inventors: Yuuichi Kijima, Yoshiyuki Kaneko, Shigemi Hirasawa
  • Publication number: 20090058309
    Abstract: Disclosed is a field emission device. The field emission device includes: an anode substrate including an anode electrode formed on a surface thereof and a fluorescent layer formed on the anode electrode; a cathode substrate disposed opposite to and spaced apart from the anode substrate, and including at least one cathode electrode formed toward the anode substrate and a field emitter formed on each cathode electrode; and a gate substrate having one surface in contact with the cathode substrate, wherein the gate substrate include gate insulators surrounding the field emitters and having a plurality of openings exposing the field emitters, and a plurality of gate electrodes formed on the gate insulators around the openings and electrically isolated from one another.
    Type: Application
    Filed: March 27, 2007
    Publication date: March 5, 2009
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jin Woo Jeong, Yoon Ho Song, Dae Jun Kim
  • Publication number: 20090058259
    Abstract: Displays are described comprising electrically quenched phosphor pixels, in which light emissions by a phosphor pixel are inhibited by application of an electric field. Such pixels may be excited by UV and de-excited by applying a voltage to control the display. In an embodiment, a pixel amplifier structure may be included and added to the output of a quenched phosphor display.
    Type: Application
    Filed: October 9, 2008
    Publication date: March 5, 2009
    Applicant: St. Clair Intellectual Property Consultants, Inc.
    Inventor: John L. Janning
  • Publication number: 20090058258
    Abstract: A light emission device including first and second substrates facing each other, electron emission elements on the first substrate, an anode electrode with a phosphor layer on the second substrate, and spacers between the first and second substrates. Each spacer includes a spacer body comprising a dielectric material, a first coating layer on a first region of the spacer body, the first region being adjacent to the first substrate, and a second coating layer on a second region of the spacer body, the second region being adjacent to the second substrate, wherein a maximum secondary electron emission coefficient of the first coating layer under an operation voltage condition applied to the first region is about 0.8 to about 1 and a maximum secondary electron emission coefficient of the second coating layer under an operation voltage condition applied to the first and second regions is about 3 to about 16.
    Type: Application
    Filed: September 3, 2008
    Publication date: March 5, 2009
    Inventors: Cheol-Hyeon Chang, Byong-Gon Lee, Il-Hwan Kim
  • Patent number: 7498732
    Abstract: An electron emission device includes: a plate; first and second electrodes insulated from each other and arranged having a predetermined shape; an electron emitter connected to one of the first and second electrodes; and a third electrode formed with a hole through which electrons emitted from the electron emitter pass. The ratio of the a hole width of the third electrode to a width of the electron emitter is equal to or more than about 0.5 and equal to or less than about 1.0. With this configuration, there is no twisting or sagging, thereby satisfying predetermined standards for brightness and color purity.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: March 3, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Hyeong Rae Seon
  • Patent number: 7495381
    Abstract: The present invention relates to an electron emission device, and more particularly, to an electron emission device comprising a grid electrode having a thermal expansion coefficient ranging from about 80 to about 120% of the thermal expansion coefficient of the first or second substrate of the electron emission device. The grid electrode is fixed in position by minimizing misalignment caused by a difference in thermal expansion coefficients between the grid electrode and the first and second substrates of the electron emission device. The grid electrode also minimizes generation of arc discharge. However, even when arc discharge is generated, the grid electrode prevents damage to the cathode electrodes and gate electrodes from that arc discharge. According to the present invention, an electron emission device with increased brightness and resolution is easily realized by applying increased voltage to the anode electrode.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: February 24, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Eung-Joon Chi, Sang-Ho Jeon, Byong-Gon Lee
  • Patent number: 7492089
    Abstract: An electron emission type backlight unit which may include a front substrate and a rear substrate, a gate electrode, an insulating unit disposed on the gate electrode, a cathode disposed on the insulating unit that intersects the gate electrode, a first opening formed in the cathode to expose the gate electrode, a second opening formed in the insulating unit to expose the gate electrode, in which the second opening connects to the first opening, an electron emitting unit disposed on the cathode that exposes the gate electrode, in which the electron emitting unit is formed to trace along a boundary of the cathode that defines the first opening, an auxiliary gate electrode disposed on the gate electrode, in which the auxiliary gate electrode passes through the first opening and the second opening; and an anode and a light emitting unit.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: February 17, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-Suk Cho, Jae-Woo Bae, Dong-Hyun Kang, Ui-Song Do, Kyu-Nam Joo
  • Patent number: 7489070
    Abstract: A field emission device and a field emission display using the same. The field emission device includes a concave cathode electrode and an emitter formed at a center thereof. A gate electrode and a focusing gate electrode above the gate electrode serve to focus and refocus the electron beam emanating from the emitter to produce a better focused electron beam leading to improved color purity.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: February 10, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Young-Jun Park, Tae-Won Jeong
  • Patent number: 7486014
    Abstract: An electron emission device includes a first electrode disposed on a substrate, an electron emission region electrically coupled to the first electrode, and a second electrode spaced apart from the first electrode, wherein the first electrode includes an opening and an extension that projects into the opening, and the electron emission region is electrically coupled to the first electrode by the extension.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: February 3, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Seong-Yeon Hwang, Seung-Hyun Lee
  • Patent number: 7486015
    Abstract: A Field Emission Display (FED) includes: a first substrate; a first insulating layer arranged on the first substrate; a cathode arranged on the first substrate to cover the first insulating layer, the cathode having a first concave opening arranged between portions thereof covering the first insulating layer: a second insulating layer arranged on the first substrate and the cathode, the second insulating layer having a second opening connected to the first opening to expose a portion of the cathode; a gate electrode arranged on the second insulating layer, the gate electrode having a third opening connected to the second opening; a plurality of emitters arranged on the cathode in the first opening and along both edges of the first opening and spaced apart from each other; and a second substrate facing the first substrate and spaced apart therefrom and having an anode and a fluorescent layer arranged on a surface thereof.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: February 3, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Tae-Sik Oh
  • Patent number: 7479730
    Abstract: A field emission device (FED) includes an electrostatic lens structure.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: January 20, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Tae-Sik Oh
  • Patent number: 7471039
    Abstract: A quadrode field emission display is provided, where a low driving voltage is reached by an edge structure, and display in the dark is achieved by adding a sub-gate electrode. With respect to the electrical characteristics that an edge structure may raise the electric field intensity, an edge of a cathode plate through an opening of a gate layer is exposed, thereby forming the edge structure at an emitter to raise the electric field. It also reduces the driving voltage substantially. Therefore, the display in the dark is achieved by adjusting the voltage without changing the structure.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: December 30, 2008
    Assignee: Industrial Technology Research Institute
    Inventors: Biing-Nan Lin, Cheng-Chung Lee, Yu-Yang Chang, Wei-Yi Lin
  • Patent number: 7462979
    Abstract: An anode electrode 20 in an anode panel constituting a cold cathode field emission display is constituted of anode electrode units 21 in the number of N (N?2), each anode electrode unit is connected to an anode-electrode control circuit 43 through one electric supply line 22, and VA/Lg<1 (kV/?m) is satisfied in which VA (unit:kilovolt) is a voltage difference between an output voltage of the anode-electrode control circuit and a voltage applied to a cold cathode field emission device, and Lg (unit:?m) is a gap length between the anode electrode units.
    Type: Grant
    Filed: March 27, 2003
    Date of Patent: December 9, 2008
    Assignee: Sony Corporation
    Inventors: Morikazu Konishi, Koichi Iida
  • Patent number: 7459844
    Abstract: An electron-emitting device in which the specific capacitance and the drive voltage are reduced, and which is capable of obtaining a finer electron beam by controlling the trajectory of emitted electrons. An electron-emitting portion of an electron-emitting member is positioned between the height of a gate and the height of an anode. When the distance between the gate and a cathode is d; the potential difference at driving the device is V1; the distance between the anode and the substrate is H; and the potential difference between the anode and the cathode is V2, then the electric field E1=V1/d during driving is configured to be within the range from 1 to 50 times E2=V2/H.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: December 2, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeo Tsukamoto
  • Patent number: 7459843
    Abstract: An electron emission device includes first and second substrates facing each other with a predetermined distance therebetween, and an electron emission region formed on the first substrate. First and second electrodes are placed on the first substrate while being insulated from each other to control an electron emission of the electron emission region. An insulating layer is disposed between the first and second electrodes. An anode electrode is formed on the second substrate. A phosphor layer is formed on a surface of the anode electrode. The insulating layer has a multiple-layered structure including at least two layers differing from each other in electro-physical property.
    Type: Grant
    Filed: February 6, 2006
    Date of Patent: December 2, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Seong-Yeon Hwang
  • Patent number: 7456565
    Abstract: An electron emitting device comprising on a substrate: an electrode extracting electrons from the electron emitting portion, the electrode applied with a voltage higher then the cathode electrode; and an deflecting electrode deflecting the electrons extracted from the electron emitting portion by the extraction electrode, the deflecting electrode applied with the voltage lower than the voltage of the extraction electrode; wherein the electron emitting device is disposed so as to be opposed to an anode electrode, and the extraction electrode is disposed between the cathode electrode and the deflecting electrode, and wherein the deflecting electrode comprises a portion opposed to the electron emitting portion, and other portions disposed to nip a region between the electron emitting portion and said portion in a direction crossing the direction along which the portion and the electron emitting portion are opposed.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: November 25, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazushi Nomura, Hidehiko Nakajima
  • Patent number: 7456563
    Abstract: An electron emission display includes first and second substrates facing each other. First electrodes are arranged on the first substrate along a first direction. Second electrodes are arranged along a second direction such that the second electrodes cross the first electrodes. Sub-pixels are formed at crossed regions of the first and second electrodes, and electron emission regions are provided on the first electrodes within the sub-pixels. Phosphor layers are formed on a surface of the second substrate such that the phosphor layers are spaced apart from each other with a distance therebetween. A metallic reflection layer is formed on the second substrate to cover the phosphor layers. The metallic reflection layer has spaced portions covering at least two of the phosphor layers and spaced away from the phosphor layers with an open gap therebetween, and contact portions not spaced away from the second substrate with an open gap therebetween.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: November 25, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Soo-Joung Lee, Jung-Ho Kang
  • Patent number: 7456564
    Abstract: Provided is a field emission display, which includes: a cathode portion including row signal lines and column signal lines in a stripe form allowing matrix addressing to be carried out on a substrate, and pixels defined by the row signal lines and the column signal lines, each pixel having a field emitter and a control device which controls the field emitter with two terminals connected to at least the row signal line and the column signal line and one terminal connected to the field emitter; an anode portion having an anode electrode, and a phosphor connected to the anode electrode; and a gate portion having a metal mesh with a plurality of penetrating holes, and a dielectric layer formed on at least one region of the metal mesh, wherein the gate portion is disposed between the cathode portion and the anode portion to allow the surface where the dielectric layer is formed to be faced to the cathode portion and to allow electrons emitted from the field emitter to collide with the phosphor via the penetrating
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: November 25, 2008
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yoon Ho Song, Jin Ho Lee, Chi Sun Hwang