Abstract: An apparatus for generating a CMOS comparator bias voltage for a CMOS comparator includes a dummy comparator having a negative input and a positive input coupled together to receive a common mode reference voltage corresponding to the common mode input voltage of the CMOS comparator. The dummy comparator also includes a bias input and an output. The apparatus for generating a CMOS comparator bias voltage further includes a bias amplifier having a negative input coupled to the output of the dummy comparator, a positive input for receiving a threshold reference voltage corresponding to the input threshold of the next stage driven by the CMOS comparator, and an output coupled to the bias input of said dummy comparator to form a comparator bias voltage.

Abstract: A switched current source includes at least two branches, at least one MOS current source transistor connected in common to each of the at least two branches, and at least two MOS switching transistors each being connected in a respective one of the branches and simultaneously forming an additional current source transistor, the at least one current source transistor being connected as a respective cascode with each of the at least two switching transistors.

Abstract: An integrated semiconductor device is disclosed which has a highly-integrated circuit formed on a substrate. A constant voltage generator is connected to the integrated circuit, for receiving an externally-supplied d.c. power supply voltage to produce a regulated d.c. voltage, the potential level of which is lower than the external power supply voltage and remains substantially constant irrespective of the external power supply voltage. A mode-change controller is connected in parallel with the voltage generator, for supplying the output d.c. voltage of the voltage generator to the integrated circuit as an internal power supply voltage in a normal operation mode. When the device is subjected to an accelerated test using an increased power supply voltage, a switching transistor is rendered conductive under the control of a control circuit, thereby allowing the external power supply voltage to be directly applied to the integrated circuit.

Abstract: A voltage limiting circuit with two-terminal network character is described which has a sharp-edged limitation characteristic curve and a short response time. According to the invention, this is achieved by means of two current mirror circuits connected to each other in a ring circuit, with a clamping transistor being at the same time a transistor of one of these current mirror circuits. A biasing current is fed from a current source into the remaining elements of the two current mirror circuits, this biasing current subjecting the semiconductor junctions of these current mirror elements to current and charging the diffusion and depletion layer capacitances thereof already prior to the limitation onset. The consequence thereof is a rapid limitation effect when the limit voltages are being reached.

Abstract: A drive circuit for terminators in a SCSI (Small Computer Standard Interface) system comprises a bipolar transistor operating in saturated condition to keep the voltage drop to less than 200 millivolts. A second transistor serves to detect when, due to overcurrent conditions, the first transistor goes out off saturation and turns it off. Also provided is means for ensuring that the first transistor turns on before the second transistor on power-up.

Abstract: An on-chip DC power supply uses at least one series pass element which conducts responsive to a gating signal obtained by clamping an input potential to a preselected polarity and amplitude. A charge storage element serves to maintain an output voltage which is clamped to a predetermined maximum value. An output regulator provides a substantially constant second output voltage at a magnitude less than the output voltage set by the output clamping means.

Abstract: A semiconductor integrated circuit is provided with an internal voltage generator to normally operate with internal source voltage which is lower than externally supplied source voltage and serves as operating source voltage. The semiconductor integrated circuit is further provided with a control circuit for controlling an internal source voltage generator so that voltage generated by the internal source voltage generator in burn-in or the like serves as first voltage which is higher than normal internal source voltage to accelerate the burn-in.

Abstract: A conventional pilot lamp which is used in a power plant, substation, or other types of plants, each has its own large and heavy weight transformer below the lamp case. In order to obtain a pilot lamp having the same capacity as the conventional pilot lamp even if the transformer is taken away from the lamp case, the pilot lamp of this invention comprises a lamp, a lamp holder, a heat radiating plate fixed within the lamp holder, an extremely small-sized IC type AC-DC constant voltage regulator connected to the input terminal fixed to the lamp holder, and an output terminal connected to the lamp. Thus, the arrangement contemplated produces a pilot lamp having the same capacity as a conventional pilot lamp, without the large and heavy weight of the transformer unit below the lamp case.

Abstract: A semiconductor memory device of the invention is switched to an operation mode or a standby mode in response to a control signal. When the control signal indicates the standby mode, a voltage converter circuit becomes inoperative, and an external power source voltage is directly supplied to an internal circuit (e.g., a memory circuit). However, in the standby mode the internal circuit has low power consumption, and the voltage converter circuit has no power consumption, thus rendering total power consumption of the semiconductor device low. When the control signal indicates the operation mode, the voltage converter circuit drops the external power source voltage and supplies it to the internal circuit. Thus, no hot electrons are generated in elements constituting the internal circuit (e.g., CMOS transistors), and degradation of the elements is prevented.

Abstract: A circuit that develops a current having a predetermined temperature coefficient includes a pair of transistors which are supplied equal collector currents but which are operated at different current densities to produce a difference voltage between the emitters thereof that has a predetermined temperature coefficient. A third transistor is biased to sink a collector current the value of which is set by the ratio of the difference voltage to the value of a first resistor which is coupled between the collector and base of the third transistor. A second resistor can be coupled between the base and emitter of the third transistor to an output of the circuit whereby the current flowing from the output has a net temperature coefficient that is determined by the ratio of the value of the first resistor to the value of the second resistor.

Abstract: A bias generating circuit for reducing an external DC power supply voltage to a predetermined, lower, stable DC voltage used as a power source for internal logic circuits in a semiconductor IC chip includes an oscillator for converting the external DC voltage into a pulse signal, a smoothing circuit for converting a pulse signal into the lower DC voltage, and a control circuit interposed between the oscillator and the smoothing circuit for varying the pulse duration of the pulse signal from the oscillator to a changed pulse signal, and for regulating the lower DC voltage to a predetermined amplitude in response to the voltage variation in the lower DC voltage. The control circuit comprises a CMOS inverter, a CMOS buffer circuit for varying the pulse duration of the output signal of the CMOS inverter, and a voltage compensating circuit for controlling the transconductance of the CMOS inverter in response to the variation of the lower DC voltage.

Abstract: A power supply for producing DC voltage with a minimum voltage drop from a source voltage that is either AC or DC in which the emitter-base junction of a transistor is coupled to the source so as to provide base current required to turn the transistor on, an output capacitor is connected in series with the emitter-collector path, and a capacitor and resistor are connected in parallel in the base circuit of the transistor.

Abstract: The present invention consists of a subcircuit which may be employed in integrated circuit technology to provide the necessary drop from a relatively high voltage source and to provide base current for biasing of associated transistorized circuitry. Each subcircuit employs four transistors and one resistor and provides an effective drop from approximately 1.1 volts when it is desired to provide at least 2 microamps of bias circuit. Additional subcircuits of similar configuration can be placed in series with the present circuitry to increase the amount of voltage drop in accordance with the requirements of the associated circuitry.

Abstract: A bias voltage supply circuit having a relatively stable constant voltage during load current fluctuations and driven by a relatively low DC power supply voltage, which includes a DC power supply terminal, a DC current source, a first transistor connected at its collector to the DC power supply terminal via the DC current source, a first resistor connected between the emitter of the first transistor and a reference potential terminal, a second transistor having its collector-emitter circuit connected in parallel with the series circuit of the DC current source and the first transistor, the base of the second transistor connected to the collector of the first transistor, a second resistor connected in parallel with the collector-base circuit of the first transistor and an output terminal connected to the base of the first transistor.

Abstract: A circuit acting as a constant current source comprises a transistor having an emitter to base junction forward biased by a voltage of from 24 to 125 volts DC. A 5.6 volt Zener diode is connected between the base and voltage supply and a light emitting diode is connected between the collector and a field contact. A substantially constant current supply is provided over the voltage range.

Abstract: An improved bias generator provides a bias voltage output which is a function of an input current Iprog and provides a bias current to a preselected load which tracks the input signal independently of temperature. The amount the bias voltage output changes with temperature is determined by (1) V(T, Iprog), a voltage-current temperature dependent function of the base-emitter voltage drop of at least one transistor and (2) X, a scalar which is easily provided by setting the ratio of two resistors. The generator can therefore be easily constructed for particular circuit loads which include at least one semiconductive junction such that the biasing current through the load will be substantially independent of temperature.

Abstract: The present invention relates to an overvoltage protection device designed to protect electronic components against high energy transients. The protection device comprises a varistor, across which there is connected a voltage-dividing unit comprising a resistor and a voltage-limiting element, for example a varistor or a Zener diode. The voltage appearing across the voltage-limiting element controls the output signal of the protection device by being connected to the base of a transistor. The input signal to the transistor consists of the input signal of the circuit or the input signal voltage-divided across an input resistor.

Abstract: Voltage stabilizer for use in a telephone set which in order to obtain a low direct current resistance and a high alternating current impedance comprises two series-arranged transistor circuits connected between two terminals and a voltage divider connected between the terminals, the bases of the transistor circuits being connected to the terminals and the base of the upper transistor circuit of a capacitor being connected to the terminal to which the emitter of the lower transistor circuit has been coupled.

Abstract: An improved start-up circuit is provided for self-biased circuits of the type connected to a supply voltage and having biasing currents stable at two operating points at which the biasing currents are either zero or nonzero in value when the supply voltage is nonzero and having sufficient regenerative feedback to raise the level of the biasing currents to the nonzero value when an initial current is provided to the circuit. The start-up circuit includes a resistive element which provides a current path from the supply voltage to the self-biased circuit and a transistor element, responsive to the current flow through the path for supplying an initial current to the self-biased circuit, whereupon the regenerative feedback causes the circuit to draw a current related to the biasing current through the current path as the biasing currents reach the nonzero operating point.

Abstract: A current control circuit which can be used to provide starting current during the build-up of an input voltage, and terminate the starting current when the input voltage has reached a predetermined level. The preferred embodiment employs three FETs and one bipolar transistor, located in a total of only two isolation pockets on an integrated circuit chip. The first FET, which is scaled to operate in its saturated region while the second FET is in its resistive region, transmits a current received from the second FET as an output starting current during the initial portion of the input voltage build-up. During this time the second FET holds the gate-source voltage of the first FET to a level less than its pinch-off voltage. The third FET has its gate and source terminals connected in parallel with the first FET, and its drain connected to the base of the bipolar transistor, which is also connected to shunt current away from the first FET when appropriately gated.

Abstract: A voltage generator circuit for producing an output voltage which tracks the threshold voltage variation of the MOS devices on the semiconductor body, the magnitude of the output voltage being equal to or slightly greater than the absolute magnitude of the threshold voltages. The circuit includes two MOSFETs having their conduction paths connected in electrical series, each MOSFET having an applied gate-to-source voltage of 2V.sub.T. The voltage output terminal is connected to the node between the series connected conduction path terminals of the first and second MOSFETs. Three series connected MOSFETs which form a source follower circuit are also provided for providing the required gate-to-source voltage on the first two MOSFETs.

Abstract: Direct Current power supply for providing a relatively low stabilized d.c. voltage from a relatively high a.c. voltage primary power source without the use of a transformer. The d.c. value is developed across a variable impedance device coupled substantially in series with the current path established between the source of a.c. power and a functional load coupled to the source of a.c. power. Through effective control of the variable impedance so as to be at a minimum value, e.g. low impedance, through one half-cycle of the a.c.

Abstract: A voltage regulator circuit of the type including a transistor having a base, an emitter representing a voltage output terminal and a collector representing a voltage input terminal, and a zener diode connected in series with the base to represent a common input-output terminal, wherein voltage regulation is achieved by the constant reverse bias voltage drop of the zener diode in combination with the constant forward bias voltage drop of the emitter-base junction of the transistor, the improvement including a second transistor having an emitter representing a second voltage output terminal with respect to the common input-output terminal, and the second transistor further having a base connected to the emitter of the first transistor, wherein voltage regulation is provided for the second output terminal with respect to the common input-output terminal by the combination of the voltage regulation provided at the first output terminal and the constant forward bias voltage drop of the emitter-base junction of th

Abstract: A single chip MOS regulated negative power supply is comprised of first, second and third strings of field effect transistors and first and second amplifiers. The first string in conjunction with the zener diode develops a reference voltage which then passes through a voltage to current converter comprised of a first amplifier, the second string and an output transistor. The current thus produced passes through a third string of field effect transistors which is referenced to ground. The second amplifier provides negative feedback to the third string to produce the regulated output.

Abstract: Disclosed is a constant voltage threshold device for providing a substantially constant voltage across a pair of terminals. The threshold device includes a field effect device having source and drain regions formed into an isolated semiconductor region which, in turn, is formed into a substrate. The distance between the drain region of the field effect device and the substrate is directly related to the threshold voltage of the threshold device. The threshold voltage is also determined by the relative doping levels of the various semiconductor regions and the value of various fixed biasing potentials applied to the various electrodes of the threshold device.