Abstract: A device includes a current mirror, a switch, first and second current paths, first and second buffers, a variable resistor, a temperature-sensing circuit, and a controller. The first current path is coupled between the current mirror's input and the switch. The switch switches between ground and a transistor based on a control signal. The second current path is coupled between a first current mirror output and ground. The first buffer is coupled to a second current mirror output. The second buffer is coupled to the variable resistor, which is coupled to the first buffer. The temperature-sensing circuit provides a device temperature to the controller, which is coupled to a first buffer output and determines a first adjustment to the first and second current paths and a second adjustment to the variable resistor based on the device temperature.

Abstract: A low power temperature detection method, system, and apparatus sense when a temperature threshold is reached by connecting a current conveyor (111) with a startup bias circuit (112) having a first FET (P1) (connected to level shift a reference voltage to provide an input voltage VS1), a first diode-connected BJT (Q0) (connected to generate a base-emitter voltage based on the junction temperature), and a second FET (P2) (connected to level shift the base-emitter voltage), where the startup bias circuit (112) selectively connects the current conveyor (111) to ground to form a closed loop that is activated only when an emitter current at the first diode-connected BJT (Q0) enters a self-turned-on operation region, thereby activating the current conveyor to detect a temperature threshold being reached by the device junction temperature.

Abstract: A signal generating device including a first circuit coupled between a first reference voltage and a second reference voltage and arranged to generate a first current to a first BJT; a first control circuit connected to the first BJT and arranged to adjust the first current. The first circuit outputs a part of a temperature-dependent signal on an output terminal, and includes: a first active device having a first and a second connecting terminal coupled to the first BJT; a second active device having a first connecting terminal coupled to the first BJT, and a second connecting terminal coupled to a second reference voltage; a first amplifier having an input terminal coupled to the first BJT, and an output terminal coupled to the control terminal of the first active device; and a second control circuit coupled to the first circuit for controlling the temperature-dependent signal according to the first current.

Abstract: A bandgap current reference circuit includes a bandgap core circuit and an error amplifier. The bandgap core circuit is configured to generate a zero temperature coefficient bandgap current. The bandgap core circuit includes a bipolar transistor. The bipolar transistor is configured to pass a current that is proportional to absolute temperature (PTAT current). The error amplifier is coupled to the bandgap core circuit and includes a bipolar differential input pair. The bipolar differential input pair is configured to ensure that the PTAT current is flowing in the bipolar transistor.

Abstract: Multiple temperature-proportional cores are implemented within a bandgap circuit to deliver respective, uncorrelated temperature-proportional currents to a temperature-complementary load, reducing flicker noise in the resulting bandgap reference voltage.

Abstract: Voltage reference circuits are provided. A voltage reference circuit includes a transistor, a flipped-gate transistor, a first current mirror unit, a second current mirror unit and an output node. The gate and the drain of the flipped-gate transistor are coupled to the gate and the drain of the transistor. The first current mirror unit is configured to provide a first current to the flipped-gate transistor and the mirroring current in response to a bias current. The second current mirror unit is configured to drain a second current from the transistor in response to the mirroring current. The output node is coupled to the source of the transistor and the second current mirror unit, and is configured to output a reference voltage.

Abstract: An integrated circuit includes a first bandgap voltage reference sub-circuit configured to provide a first bandgap reference voltage; a second bandgap voltage reference sub-circuit configured to provide a second bandgap reference voltage; a voltage regulator sub-circuit configured to derive a first supply voltage using the first bandgap reference voltage and a second supply voltage using the second bandgap reference voltage; a bandgap comparator sub-circuit configured to derive a first internal voltage and a second internal voltage from the first supply voltage, wherein the first internal voltage decreases at a higher rate than the second internal voltage with respect to a decreasing first supply voltage, wherein the bandgap comparator sub-circuit is configured indicate which of the first and the second internal voltages is larger; and a comparator sub-circuit configured to indicate whether a difference between the first supply voltage and the second supply voltage is larger than a predefined threshold.

Abstract: A trans-inductor voltage regulator (TLVR) has regulator blocks and transformers. Secondary windings of the transformers are connected in series with a compensation inductor to form a trans-inductor loop, which is connected to the output voltage of the TLVR instead of to ground. Primary windings of the transformers serve as output inductors of the regulator blocks. The inductance of each output inductor and the output inductance of the TLVR are input to an averaging network of an averaging inductor direct current resistance (DCR) current sense circuit to generate an average sensed voltage. The average sensed voltage is converted to an average sensed current, which is used by a controller to generate control signals that drive the regulator blocks to generate the output voltage of the TLVR.

Abstract: In an example, an integrated circuit includes a junction-gate field effect transistor (JFET), a current generator, a dynamic filter, and an output transistor. The JFET has a JFET gate, a JFET source, and a JFET drain, the JFET drain adapted to be coupled to a power supply. The current generator has a current generator input and current generator outputs, the current generator input coupled to the JFET source and a first of the current generator outputs coupled to the JFET gate. The dynamic filter has a dynamic filter input and a dynamic filter output, the dynamic filter input coupled to a second of the current generator outputs. The output transistor has an output transistor gate coupled to the dynamic filter output.

Abstract: An adapter assembly including a power box that has a housing containing internal components, a longitudinal axis and a storage portion. The adapter assembly also includes a first cord coupled to and extending from the housing, an adapter including an engagement portion that is removably coupled to the storage portion of the housing and that selectively engages a power source-receiving portion of a tool, and a second cord having a first end coupled to the adapter and a second end coupled to the housing.

Abstract: A voltage regulator comprising a reference current generator coupled between a supply terminal and a reference terminal and configured to provide a reference current that is independent of an operating range of a supply voltage; and a regulator stage comprising: a current terminal configured to receive the reference current; a NMOS transistor having: a gate coupled to the current terminal; a drain coupled to the supply terminal; and a source coupled to an output terminal; a voltage reference circuit for providing a regulated output voltage coupled between the output terminal and the reference terminal, the voltage reference circuit comprising an output resistor coupled in series with a conduction channel of an output bipolar transistor arranged in a diode-connected configuration; an input bipolar transistor having: a conduction channel coupled between the current terminal and the reference terminal; and a base terminal coupled to a base terminal of the output bipolar transistor.

Abstract: A current sensor automatically adjusting an offset voltage, includes an input corrector, upon receiving a first voltage, a second voltage, and a control signal, configured to correct either one or both of the first voltage and the second voltage to reduce an absolute value of a difference between the first voltage and the second voltage based on the control signal, and output a correction result; an input amplifier configured to amplify a voltage output from the input corrector; an output amplifier configured to generate an output voltage when a voltage amplified by the input amplifier is input; a controller including a switch connected to one of voltages amplified by the input amplifier to be grounded when a difference between the first voltage and the second voltage is larger than a first threshold value; and a correction circuit controller configured to generate the control signal to input to the input corrector.

Abstract: A data processing system includes a compute blade generating a write command to store data and a read command to read the data, and a memory blade. The compute blade has a memory that stores information about performance characteristics of each of a plurality of memories, and determines priority information through which eviction of a cache line is carried out based on the stored information.

Abstract: Provided is a constant current circuit supplying a temperature-compensated constant current. The constant current circuit includes a BGR circuit, a temperature dependent current generator, a reference current generator, and an output current generator. The BGR circuit generates a reference voltage with low voltage dependence. The temperature dependent current generator generates a temperature dependent current having a positive temperature coefficient. The reference current generator generates a temperature-compensated reference current by using the reference voltage and the temperature dependent current. The output current generator generates an output current based on the reference current generated by the reference current generator.

Abstract: A current sensing circuit includes load transistors having a current path coupled between a power terminal and corresponding load terminals, sense transistors having a current path coupled between the power terminal and corresponding sense terminals, each sense transistor being coupled to a respective load transistor, N-channel transistors having a current path coupled between a respective sense transistor and a respective sense terminal, an amplifier for selectively equalizing the voltages across one of the load transistors and one of the sense transistors, and bypass circuits coupled to a bulk terminal of the N-channel transistors.

Abstract: A radiation tolerant discrete reference voltage source includes just two bipolar junction transistors, five resistors, and a Zener diode. Two of the resistors form a voltage divider that outputs a reference voltage. Values of the resistors included in the voltage divider can be selected to output a desired reference voltage level, for example, 5.00V, 4.00V, or 2.50V, which obviates a need to procure unique voltage references for those reference voltage levels and provides design flexibility. The radiation tolerant discrete reference voltage source provides improved control over radiation hardness and does not require high gain transistors. Because relatively few, inexpensive components are used, the radiation tolerant discrete reference voltage source can be produced at a low cost.

Abstract: A trimmable and switchable current mirror can be used in a bandgap voltage reference to calibrate the voltage reference without requiring access to measurement of the quiescent current IQ of the voltage reference. Trimmable transistors within the current mirror are alternately selectable as the diode-connected transistor via a mirror switch signal. A bandgap voltage difference is computed for two bandgap voltage values measured for alternate switched configurations of the current mirror. A set of such differences is computed and stored for different trim configurations of the mirror transistors, and the trim configuration corresponding to the lowest absolute value bandgap voltage difference can be selected as the optimal trim configuration. Following mirror transistor trim adjustment, a bandgap resistor trim can be adjusted to further calibrate the bandgap voltage reference.

Abstract: A power management circuit includes a boost converter which generates a boosted voltage at a boosting node by boosting an input voltage by using a reference boosting voltage, a voltage regulator coupled to the boosting node and an output node, a bypass transistor coupled between the boosting node and the output node, and a regulator control block which compares the input voltage with a reference input voltage. When the input voltage is higher than or equal to the reference input voltage, the regulator control block increases the reference boosting voltage to increase the boosted voltage, enables the voltage regulator to generate a regulated voltage by regulating the increased boosted voltage, turns off the bypass transistor such that the regulated voltage is output as a pixel power supply voltage at the output node, and maintains an enable state of the voltage regulator for a minimum enable time.

Abstract: A temperature- and voltage-independent oscillator circuit including a bias circuit configured to generate a reference voltage based on a reference current and a bias resistor; a signal generator circuit configured to generate a bias current based on the reference current, and generate an oscillation signal by repeatedly charging a capacitor using the bias current, and discharging the charged capacitor; and a control circuit configured to control the charging of the capacitor and the discharging of the charged capacitor based on the reference voltage and a voltage of the oscillation signal, wherein a period of the oscillation signal is determined by a resistance value of the bias resistor and a capacitance value of the capacitor.

Abstract: A display device and method of operation that provides self-generated power. The device includes: a display portion including a plurality of pixels; a data driver applying a data signal to data lines connected to the plurality of pixels; a signal controller transmitting an image data signal for generation of the data signal to the data driver; a power supply generating a driving voltage for operation of the signal controller and the data driver; a thermoelectric generation portion generating electrical energy by using heat generated by at least one of the signal controller, the power supply, and the data driver; and a converter generating an auxiliary driving voltage that is the same as the driving voltage by using the electrical energy.

Abstract: A drive circuit for an insulated-gate semiconductor element includes a current source which generates a current to be supplied to a gate of the insulated-gate semiconductor element, a current output circuit which controls supply of the current generated by the current source to the gate of the insulated-gate semiconductor element in accordance with a drive signal, an output current control circuit which controls a magnitude of the current generated by the current source in accordance with a control voltage according to an operating temperature of the insulated-gate semiconductor element, and a control voltage detection terminal which is provided in the output current control circuit and enables detection of the control voltage from outside.

Abstract: A switch circuit includes a first switch element defined by an FET, and an active snubber circuit connected between a drain and a source of the first switch element and including a second switch element defined by an FET, a capacitor connected in series to the second switch element, a third switch element connected to a gate of the second switch element and turned on to extract an electric charge of capacitance between the gate and a source of the second switch element, and a delay circuit that turns on the third switch element at a timing delayed from a timing at which the second switch element is turned on.

Abstract: A switching module comprising at least one power switching device arranged to output from an output node thereof a load current for the switching module, and at least one current sense component arranged to generate at least one sense current representative of the load current. The at least one current sense component comprises at least one temperature coefficient compensation resistance within the path of the at least one sense current and arranged to cause the at least one sense current to be at least partly compensated for a temperature coefficient caused by at least one parasitic routing resistance of a load current path for the at least one power switching device.

Abstract: A method of over-temperature protection for a power switch, can include: (i) generating a sensing signal by sensing a temperature of the power switch; (ii) determining a temperature threshold signal based on a conduction voltage between first and second terminals of the power switch, where a value of the temperature threshold signal is reduced as the conduction voltage increases; and (iii) turning off the power switch when the sensing signal is greater than or equal to the temperature threshold signal.

Abstract: An air conditioner includes an inverter circuit, a control unit that controls the inverter circuit, a compressor having a protection device (a pressure switch), and a phase-voltage detection circuit (a U-phase voltage detection circuit) that detects a voltage at any of three-phase windings (compressor windings) of the compressor. The control unit includes a shutdown-cause specifying unit that determines presence or absence of an operation of the protection device based on a phase voltage value detected by the phase-voltage detection circuit, by turning on any of a plurality of switching elements constituting the inverter circuit, after the compressor has been shut down, and specifies a cause of the shutdown of the compressor.

Abstract: An electrical circuit for providing electrical power for use in powering electronic devices, such as monitors, televisions, white goods, data centers, and telecom circuit boards, is described herein. The electrical circuit includes an input terminal configured to receive an input power signal, an output terminal configured to provide an output power signal, and a forward converter coupled to the input and output terminals. The forward converter includes a transformer, and a primary side regulation circuit coupled to a primary side of the transformer. The primary side regulation circuit includes a switching device coupled to the primary side, a current sense circuit configured to sense a current level on the primary side, and a controller configured to generate a pulse-width modulated control signal delivered to the switching device as a function of the sensed current level to regulate the transformer to deliver the output power signal at a desired voltage level.

Abstract: Systems and methods are described for compensating for variations in process, voltage, temperature, or combinations thereof in an apparatus. An example apparatus may be a memory circuit. A pre-driver circuit and driver circuit may be associated with the memory circuit. A reference generator may provide the pre-driver circuit with reference signals that are insensitive to process, voltage, and temperature. The pre-driver circuit may receive the reference signals and the pre-driver circuit output ramping rate may then be made less sensitive to variations in process, voltage, and temperature. The pre-driver circuit output may then be supplied to a driver circuit that may then output a final driver data output with reduced noise.

Abstract: An electrical circuit for providing electrical power for use in powering electronic devices, such as monitors, televisions, white goods, data centers, and telecom circuit boards, is described herein. The electrical circuit includes an input terminal configured to receive an input power signal, an output terminal configured to provide an output power signal, and a forward converter coupled to the input and output terminals. The forward converter includes a transformer, and a primary side regulation circuit coupled to a primary side of the transformer. The primary side regulation circuit includes a switching device coupled to the primary side, a current sense circuit configured to sense a current level on the primary side, and a controller configured to generate a pulse-width modulated control signal delivered to the switching device as a function of the sensed current level to regulate the transformer to deliver the output power signal at a desired voltage level.

Abstract: Described is a current-mode thermal sensor apparatus which comprises: a first transistor with a gate terminal coupled to a first node; a second transistor with a gate terminal coupled to a second node; a first resistor coupled to the first and second nodes; a second resistor coupled to the first node and a supply node; and a diode coupled to the second node and the supply node.

Abstract: The electronic device comprises a substrate provided with a surface comprising a region of interest, the thermal behavior of which is to be monitored, and a system for detecting hot spots located in the region of interest. The system for detecting hot spots comprises at least three separate heat flow meters arranged on the surface of the substrate outside of the region of interest.

Abstract: A device of triggering and generating temperature coefficient current for generating a temperature coefficient current includes a positive temperature coefficient current generating unit, for generating a first positive temperature coefficient current, a negative temperature coefficient current generating unit, for generating a first negative temperature coefficient current, and a triggering unit, for triggering to generate the temperature coefficient current according to a triggering temperature and a current difference between the first positive temperature coefficient current and the first negative temperature coefficient current.

Abstract: Systems and methods for digital voltage compensation in a power supply integrated circuit are provided. In at least one embodiment, a method includes receiving a digital voltage code, the digital voltage code corresponding to an output voltage value; setting an output count on a first counter to change from a present first digital count corresponding to a present voltage code value toward a target first digital count corresponding to a new voltage code value; and setting a second count to an offset count value on a second counter when the new voltage code value is received. The method also includes combining the second count with the output count to form a combined count value; and decrementing the second count value from the offset count value to zero when the first counter reaches the target first digital count.

Abstract: Low-power circuits for providing stable voltage and current references rely on currents flowing through ultra-thin dielectric layer components for operation. A current reference circuit includes driving circuitry operative to apply a voltage to the first terminal of the component with respect to the second terminal of the component in order to cause a current to flow through the dielectric layer, and sources a reference output current that is based on the current flow through the dielectric layer in response to the applied voltage. A voltage reference circuit includes a current source which applies a current to the ultra-thin dielectric layer component, and maintains an output node at a stable reference output voltage level based on the voltage across the ultra-thin dielectric layer component in response to the current flow through the dielectric layer.

Abstract: This document discusses, among other things, apparatus for high-efficiency, thermally-compensated regulators. In an example, a regulator can include a zener diode having a first temperature coefficient, the zener diode configured couple to an output and to provide at least a portion of a reference voltage, a transistor having a second temperature coefficient, the transistor configured to receive the reference voltage, to receive a representation of the output, and to provide feedback information indicative of an error of the output using the representation of the output voltage and the reference voltage, and wherein the first temperature coefficient and the second temperature coefficient are configured to reduce at least a portion of a temperature drift effect of the zener diode and the transistor.

Abstract: An electronic switch is connected in series with a load dependent on an input signal. The electronic switch is operated in a first operation mode for a first time period after a signal level of the input signal has changed from an off-level to an on-level. The first operation mode includes driving the electronic switch dependent on a voltage across the load and dependent on a temperature of the electronic switch. The electronic switch is operated in a second operation mode after the first time period. The second operation mode includes driving the electronic switch dependent on the temperature according to a hysteresis curve.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: This invention involves a bandgap reference circuit in IC. The temperature coefficient of conventional bandgap reference is large and the higher order compensation is difficult to implement. This invention provides an adaptive compensated bandgap reference which solves the problem only using lower order (first order) temperature coefficient compensation. The invention adopts segmental compensation circuit to realize adaptive segmental compensation of bandgap reference with low temperature coefficient. The technical solution includes traditional bandgap voltage reference circuit and adaptive feedback compensation circuit which consists of sample and hold circuit, voltage comparator and control module. This invention controls the bandgap voltage reference through systematical view and it has high process compatibility.

Abstract: Embodiments of the present invention relate to limiting maximum power dissipation occurred in a processor. Therefore, when an application that requires excessive amounts of power is being executed, the execution of the application may be prevented to reduce dissipated or consumed power.

Abstract: A temperature compensation circuit is disclosed. A temperature compensation circuit may include a temperature coefficient generator configured to generate a first signal and a second signal, wherein the first signal is proportional-to-absolute-temperature (ptat) and the second signal is negatively-proportional-to-absolute-temperature (ntat), a first programmable element configured to multiply at a first programmable ratio an amplitude of a third signal having a negative temperature coefficient from a first temperature to a second temperature, and a second programmable element configured to multiply at a second programmable ratio an amplitude of a fourth signal having a positive temperature coefficient from the second temperature to a third temperature.

Abstract: A monolithic voltage reference circuit may include a voltage-mode band-gap reference circuit, a temperature independent differential current source, and a temperature dependent differential current source. The voltage-mode band-gap reference circuit may include an error amplifier having differential input nodes. The temperature independent differential current source may be configured to add in or subtract from the differential input nodes a substantially temperature independent differential current with an allocation between the nodes that is controlled by a selectable output voltage trim setting. The temperature dependent differential current source may be configured to add in or subtract from the differential input nodes a substantially temperature dependent differential current with an allocation between the nodes that is controlled by a selectable temperature drift trim setting.

Abstract: A reference voltage generation circuit includes: a bandgap reference circuit, generating a plurality of initial currents with different temperature coefficients; a base voltage generation circuit, combining the initial current into a combined current, and converting the combined current into one or more base voltages; a bias current source circuit, generating one or more bias currents based on at least one of the initial currents; and one or more regulating output circuit, each converting a respective one of the one or more bias currents into an increment voltage and adding the increment voltage to the base voltage to generate a respective output voltage. Each output voltage may have its respective temperature coefficient.

Abstract: One embodiment provides a reference current generation circuit. The circuit has first and second reference current generation circuits for generating first and second reference currents respectively, and a current output circuit for outputting a third reference current by adding the first and second reference currents. The first reference current generation circuit includes first and second current-voltage conversion circuits and a first current supply circuit. The first current supply circuit provides substantially equal amounts of current to the first and second current-voltage conversion circuits respectively. The second reference current generation circuit includes third to fifth current-voltage conversion circuits and a second current supply circuit.

Abstract: A voltage converter includes a switching element, a control unit and a generation unit. The switching element controls an output voltage of the voltage converter. The control unit is configured to control the switching element based on a voltage signal. The generation unit is configured to generate the voltage signal by serially connecting a resistance element and one or more detection units having a resistor corresponding to a temperature and dividing a reference voltage by the detection units and the resistance element. The generation unit is arranged so as to be able to detect temperature change of a plurality of components which is overheat-protected.

Abstract: A current generating circuit may include a first current source configured to generate a first current having positive temperature characteristics; a second current source configured to generate a second current; a compensation transistor configured as an NPN bipolar transistor, and arranged such that the second current flows through from its collector and its emitter; and a first current mirror circuit configured to multiply a base current of the compensation transistor by a first coefficient so as to generate a third current. The current generating circuit may be configured to output a fourth current that is proportional to the difference between the first current and the third current.

Abstract: A bandgap reference voltage generator is provided. In one embodiment, the bandgap reference voltage generator includes a first current generator, a second current generator, and an output voltage generator. The first current generator generates a first current with a positive temperature coefficient. The second current generator generates a second current with a negative temperature coefficient. The output voltage generator generates a third current with a level equal to that of the first current, generates a fourth current with a level equal to that of the second current, adds the third current to the fourth current to obtain a combined current with a zero temperature coefficient, and generates a reference voltage according to the combined current.

Abstract: Systems and methods for managing process and temperature variations for on-chip sense resistors are disclosed. The system includes a circuit that can leverage a linear gm circuit in order to provide linear gains (positive gains and/or negative gains). The linearity of the circuit enables compensation for temperature and process variations across an entire range of current (positive to negative). A control signal is generated by using a linear gm amplifier and a replica resistor, which is substantially similar to the on chip resistor. The control signal is used to control the gain of a disparate linear gm amplifier within a compensation circuit, which provides an offset voltage to compensate for the variation in resistance of the on chip resistor.

Abstract: A method of regulating a supply voltage (Vgg) provided to a load circuit. The method can include generating at least one reference voltage (Vr1, Vr2, Vr3) having a negative voltage-temperature coefficient. The method further can include applying the reference voltage as a bias voltage (Vbias) to a current sink that is electrically coupled in parallel with a path of a leakage current (Ileak) drawn by the load circuit. A related voltage regulator can include a current sink that is electrically coupled in parallel with a path of a leakage current drawn by a load circuit, and a bias control circuit that generates at least one reference voltage having a negative voltage-temperature coefficient and applies the reference voltage as a bias voltage to a current sink.

Abstract: A temperature sensor circuit and system providing accurate digital temperature readings using a local or remote temperature diode. In one set of embodiments a change in diode junction voltage (?VBE) proportional to the temperature of the diode is captured and provided to an analog to digital converter (ADC), which may perform required signal conditioning functions on ?VBE, and provide a digital output corresponding to the temperature of the diode. DC components of errors in the measured temperature that may result from EMI noise modulating the junction voltage (VBE) may be minimized through the use of a front-end sample-and-hold circuit coupled between the diode and the ADC, in combination with a shunt capacitor coupled across the diode junction. The sample-and-hold-circuit may sample VBE at a frequency that provides sufficient settling time for each VBE sample, and provide corresponding stable ?VBE samples to the ADC at the ADC operating frequency.

Abstract: A reference circuit includes a first transistor having a first current electrode, a control electrode, and a second current electrode coupled to a power supply terminal. The reference circuit further includes a resistive element including a first terminal coupled to the control electrode of the first transistor and a second terminal coupled to the first current electrode. Additionally, the reference circuit includes a second transistor including a first current electrode coupled to the second terminal of the resistive element, a control electrode coupled to the second terminal, and a second current electrode coupled to the power supply terminal. The second transistor is configured to produce an output signal related to a voltage at the control electrode of the first transistor.

Abstract: A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.