Abstract: A reference voltage source with linear temperature compensation for use in a band gap voltage reference circuit. The reference voltage source comprises a voltage follower comprising a differential pair. The voltage follower is arranged in cascade with a reference circuit for supplying a compensation voltage in series with a temperature dependent reference voltage of the reference circuit. The voltage follower delivers a temperature independent output voltage between the output of the voltage follower and a reference terminal.

Abstract: A circuit arrangement generates a resistance behavior with an adjustable positive temperature coefficient. A second ohmic resistance element is connected in parallel with a series circuit of a first ohmic resistance element and a diode element wherein the value of the second ohmic resistance element is set corresponding to the desired temperature coefficient.

Abstract: A band-gap regulator circuit produces a voltage reference having a temperature compensation for second order effects. The regulator circuit includes: a Brokaw cell for producing a first band-gap voltage reference Vbg; a circuit portion including a comparator connected to the Brokaw cell output for providing a compensation voltage value Vcorr; and a summing circuit that sums together the compensation voltage value Vcorr and the first band-gap voltage reference Vbg.

Abstract: A reference voltage generator for producing a regulated, temperature-compensated output voltage from an unregulated power supply voltage is provided herein. The reference voltage generator includes a pre-regulating circuit and a temperature-compensating circuit. The temperature compensating circuit includes a first series path comprising a first cascode current sources and a first resistor; a second series path comprising a second cascode current source, a first field effect transistor and a first diode; and a third series path comprising a third cascode current source, a second field effect transistor, a second resistor and a second diode. The first series path being connected to the second series path between the first field resistor and the first diode.

Abstract: A voltage reference circuit for generating various selectable voltage reference values with temperature independence is disclosed wherein a band-gap voltage reference circuit portion, that produces a temperature independent band-gap voltage reference V.sub.BG output, has a cascode current mirror circuit portion coupled thereto in such manner that a selectable voltage reference V.sub.REF is output with the temperature coefficient of the selected voltage reference canceled.

Abstract: The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.

Abstract: A voltage regulator circuit (100), coupled between a high power supply voltage (VCC) and a lower power supply voltage (VSS), provides a regulated voltage (XDD) that is greater than the high power supply voltage (VCC). The voltage regulator circuit (100) includes a temperature compensating detect circuit (102) which activates a trigger signal when the XDD voltage exceeds a predetermined level. In response to an active trigger signal, a shunt circuit (104) couples the regulated voltage (XDD) to the high power supply voltage (VCC). The regulated voltage (XDD) is translated to the detect circuit (102) by the regulated voltage (XDD) being applied to the gate of a transistor (N112) disposed between the high power supply voltage (VCC) and a detect node (108). This arrangement allows monitoring of the regulated voltage (XDD) level without loading the regulated voltage (XDD).

Abstract: A method and circuit for producing an output current is provided. The method and circuit adds two currents with opposing temperature coefficients to produce such output current. A first one of the two currents, I.sub.1, is a scaled copy of current produced in a temperature compensated bandgap reference circuit. A second one of the two currents, I.sub.2, is derived from a temperature stable voltage produced by the bandgap circuit divided by a positive temperature coefficient resistance. The added currents, I.sub.1 +I.sub.2, provide the output current. The circuit includes a first circuit for producing: (i) a reference current having a positive temperature coefficient; and (ii) an output voltage at an output node substantially insensitive to variations in supply voltage and temperature over a predetermined range. The current source includes a second circuit connected to the output node for producing a first current derived from the bandgap reference current.

Abstract: A temperature-insensitive reference voltage for an integrated circuit is created by positioning a reference voltage generator circuit proximate to a temperature control structure formed directly on the chip. The temperature control structure utilizes the Peltier Effect to translate an applied voltage into a change in temperature. The voltage applied to the temperature control structure is regulated by a temperature regulator circuit. Both the temperature regulator circuit and the reference voltage generator circuit are formed from standard IC components. In response to detected changes in ambient temperature, the temperature regulator circuit communicates a control voltage to the temperature control structure. The thermal environment, and hence voltage output, of the voltage reference generator circuit is thus stabilized by Peltier heating and cooling relative to changes in ambient temperature.

Abstract: A precision voltage regulator comprises a three terminal regulator coupled to a voltage divider. The voltage divider has two composite resistors, each of which comprises a plurality of matched value resistors fabricated on a common substrate, mixed in series and parallel configurations. The resultant voltage divider produces a wide range of divider ratios, while preserving a divider ratio which is independent of temperature and tolerance effects.

Abstract: A precision voltage reference circuit for generating a constant reference voltage over a range of operating temperatures uses a bandgap voltage generator which is compensated with replicated currents fed back from the bandgap stage as control currents. These currents are attenuated and fed back in proper proportions to correct for bias conditions which would otherwise vary with temperature.

Abstract: A DC-DC converter has a main forward converter stage with a snubber at a source side and a sample and hold circuit at a load side. Feedback is provided by a pulse width modulated controller connected at the load side, which feeds an isolation transformer via a differentiating capacitor. The isolation transformer has its output connected to a pulse regenerator which feeds a driver and a volt-time limiter that connects to a main switch at the source side of the forward converter.

Abstract: Curvature in a reference voltage produced by a switched capacitor band gap reference circuit is compensated by producing a first .DELTA.V.sub.BE voltage by causing first and second PTAT/R currents to flow through a first .DELTA.V.sub.BE -generating circuit. The first .DELTA.V.sub.BE voltage is applied to a first terminal of a first capacitor having a second terminal coupled to a summing conductor of an operational amplifier producing the reference voltage. A second .DELTA.V.sub.BE voltage is produced by causing a third PTAT/R current and a fourth current to flow through a second .DELTA.V.sub.BE -generating circuit. The second .DELTA.V.sub.BE voltage is applied to a first terminal or a second capacitor having a second terminal coupled to the summing conductor.

Abstract: A current processing circuit having reduced charge and discharge time constant errors caused by variations in operating temperature and voltage while conveying charge and discharge currents to and from a capacitor, respectively. Instead of switching both the charge and discharge currents on and off, only the charge current is switched. The discharge current, generated and sunk by a current mirror circuit, remains on at all times. The charge current is two times the nominal discharge current. The actual discharge current is the sum of the nominal, or desired, discharge current, plus a small error current component introduced by the current mirror circuit generating the discharge current (thereby making the charge current approximately two times the actual discharge current). Alternatively, the discharge current can be switched while the charge current, generated and sourced by a current mirror circuit, remains on at all times. The discharge current is two times the nominal charge current.

Abstract: In a smoothing circuit for a switching power supply having a reactor and a capacitor, the circuit includes a resistor connected in series to the capacitor, a MOSFET connected parallel to the resistor, and a control circuit for turning the MOSFET on only when the voltage at both ends of the resistor increases or decreases to reach reference voltages. Thus, the output waveform is changed from a triangular wave to a sine wave in order to reduce the harmonic components contained in the output ripple. An output noise is reduced stably without reducing efficiency.

Abstract: A bandgap reference circuit capable of operating at low voltage provides an adjustable bandgap reference voltage. The bandgap reference circuit includes a proportional to absolute temperature (PTAT) current source, a bias current source, two resistors and a transistor. The base of the transistor couples to the IPTAT current source and the emitter of the transistor couples to the bias current source. The bandgap reference circuit also includes two resistors. The first resistor couples between the emitter and the base of the transistor, and the second resistor couples to the base of the transistor. The first resistor receives a portion of the bias current and provides a current proportional to a base-emitter voltage of the transistor. The second resistor receives the PTAT current and the current proportional to the base-emitter voltage of the transistor and provides a reference voltage which remains substantially constant over temperature and which is proportional to a silicon bandgap voltage.

Abstract: A temperature-compensated bandgap reference voltage source with an operational amplifier and a switching device and a method of operating the bandgap reference voltage source. The operational amplifier has a first input stage with a first node carrying a potential and a second input stage with a second node carrying a potential. The first and second input stages provide an output signal of the operational amplifier. The switching device is connected and operated so as to selectively feed a first input signal and a second input signal alternately to the first input stage and to the second input stage, and to alternately select the output signal of the operational amplifier from the first node and from the second node.

Abstract: A temperature monitoring circuit with thermal hysteresis in CMOS circuitry utilizes bipolar transistors which are parasitic to standard CMOS circuitry. A concept of band-gap circuitry is used to provide a proportional to absolute temperature (PTAT) current, which is used as a reference. An output signal is produced above a predetermined temperature by comparing current changes between the PTAT current and a PTAT controlled current in a single current path. The PTAT controlled current decreases faster with temperature increase than the change in the PTAT current. The thermal hysteresis is accomplished by inverting the output signal to control a hysteresis transistor for selectively shorting out a hysteresis resistor. In the preferred embodiment, a start circuit is attached to the temperature monitoring circuit with thermal hysteresis to provide an initial current to activate the present invention. The start circuit is quickly shorted out once the devices of the present invention are turned on.

Abstract: A generator circuit for a reference voltage independent of temperature variations uses a Brokaw cell biased by a current generator. The generator circuit includes a start-up circuit for delivering a current to the load of the generator using a transistor from the power-on instant until the switching on of the Brokaw cell and the consequent switching-off of the transistor. The circuit further includes a first field effect transistor having a gate coupled to a bandgap voltage node of the Brokaw cell and operatively connected in series with at least one diode between a biasing current generator of the start-up circuit and ground. The circuit also includes a second bipolar junction transistor having a base coupled to the power supply node of the Brokaw cell and operatively connected to a load resistance that is, in turn, connected to the supply rail and to the output transistor of the Brokaw cell for supplying current to the load during the start-up phase.

Abstract: A temperature detection circuit that minimizes the influence of variations due to manufacturing process and other factors, and can be used at high temperatures near its maximum usable temperature. According to the present invention, a temperature detection circuit is provided which comprises: a first current source coupled to a detection node; a second current source coupled in series to the first current source, and coupled to the detection node, the second current source having a temperature coefficient different from that of the first current source; and a detector coupled to the detection node.

Abstract: An autocalibrated voltage reference includes a continuous time reference and a switched calibration reference where continuous time reference is dynamically adjusted to match the switched reference such that the temperature drift and long term drift of the continuous time reference is matched to the low temperature drift of the switched reference and further resulting in improvement of the long term drift of the switched reference and of the entire system.

Abstract: A voltage regulator for powering a load with a predetermined temperature-stable voltage, including an output stage, a terminal of which provides a current to the load, at a reference voltage; and a current source including a first branch formed of transistors and of a first resistor connected in series between two supply terminals, and a second branch formed of transistors connected in series between the two supply terminals, the output stage including a bipolar transistor connected as a current mirror with a bipolar transistor of the second branch, and the two transistors of the current source are crossed.

Abstract: A band-gap reference voltage generator comprises an operational amplifier comprising a first input and a second input, the first input being coupled to a first feedback network and the second input being coupled to a second feedback network both coupled to an output of the operational amplifier providing a reference voltage. The first feedback network contains an emitter-base junction of first bipolar junction transistor and the second feedback network contains an emitter-base junction of second bipolar junction transistor. A selectively activated current supply supplies a bias current to the operational amplifier, the current supply being deactivatable in a substantially zero power consumption operating condition for turning the reference voltage generator off. A start-up circuit activated upon start-up of the reference voltage generator for a fixed, prescribed time interval forces a start-up current to flow through the first bipolar junction transistor means.

Abstract: A circuit provides at least partial thermal shutdown of an integrated circuit chip including a functional circuit (7) in response to detection of a hot spot in a first area of the chip. First (Q1) and second (Q3) transistors in a second area (3) of the chip are located a first distance (10) from the second area of the chip, and third (Q4) and fourth (Q2) transistors in a third area (4) of the chip are located a second distance (11) substantially greater than the first distance from the first area. The functional circuit (7) dissipates power in the first area, causing a temperature in the hot spot to rise to approximately a first temperature T3 and causing the temperature of the first and second transistors to be a second temperature T2 and causing the temperature of the third and fourth transistors to be a third temperature T1.

Abstract: Between the higher-potential power supply and the lower-potential power supply, a pair of first conductivity type MOS transistors having same configurations except for mutually different work functions of the gate electrode and another pair of second conductivity type MOS transistors having the same properties are provided to constitute a differential amplifier. The drain of the other MOS transistor having the second conductivity type is connected to the output terminal and, at the same time, is connected to the higher-potential power supply via a resistor circuit, thereby connecting the gate of one of the above-mentioned pairs of MOS transistors with the first conductivity type to the intermediate point of the resistor circuit. With this, the differential amplifier outputs at its output terminal a voltage corresponding to a difference in gate work function of the pair of MOS transistors having the first conductivity type.

Abstract: A power supply/backplane assembly and system wherein a substantially flat power supply assembly including a printed circuit, power converter modules, and heat sink is mounted directly to the rearwardly disposed surface of a backplane. The size of the power supply and the region at which it is mounted substantially falls within the border of a fully defined region of the backplane. Flat copper traces carried by the power supply circuit board function to carry regulated power directly to the backplane via a power bolt system. Thus, conventional cabling is eliminated. The circuit board also is employed in conjunction with readily accessible connector components to provide for simplified wiring installation of support features such as the interaction between a supervisory panel and a front end a.c.-to-d.c. conversion component.

Abstract: A power supply control system which prevents thermal overload of the apparatus to which power is being supplied. The supply voltage is controlled so that as the temperature of the apparatus increases beyond a predetermined threshold the supply voltage is reduced in incremental steps, thereby reducing thermal dissipation.

Abstract: Generation of symmetrical temperature compensated reference voltages in mixed type integrated circuits (digital and analog) having a superior PSRR is provided. Such a circuit includes a voltage-to-current conversion stage of a temperature independent bandgap voltage for producing a differential pair of currents that are applied as inputs to a pair of resistor feedback operational amplifiers. The feedback resistors are integrated in an interlaced form with a resistor employed in the conversion stage so that they have the same thermal gradient. Output of the operational amplifiers provides two temperature compensated low noise symmetrical reference voltages.

Abstract: A first current (Iptat) having a magnitude proportional to absolute temperature is passed through a resistor (R3) and a PN-junction (QA) to produce first and second voltages (Vr+Vbe) having, respectively, positive and negative temperature coefficients which when summed provide a temperature stabilized internal reference voltage (Vbgrl). This internal reference voltage (Vbgrl) powers the current generator for currents (I1, 12)) which pass through a second resistor (R8, R9) and a second PN junction (Q20A, Q20B) to produce third and fourth voltages having respectively, positive and negative temperature coefficients which when summed provide a temperature stabilized external reference voltage (Vbgrl) having improved ripple rejection. There is no feedback from the external reference voltage (Vbgr2, V-out) to the first current (Iptat) generator (42).

Abstract: A trimmable voltage regulator feedback network is arranged as a voltage divider: series-connected resistors are connected between the divider tap and the regulator's output voltage and a fixed resistance is connected between the tap and ground. Severable links are connected across at least two resistors above the tap to allow the regulator output voltage to be trimmed in linearly independent increments with each severed link, thereby simplifying the task of determining which links to sever to attain a desired output voltage. A trimmable resistance is inserted between the divider tap and the circuit being driven to enable the impedance of the network to be adjusted. A regulator including the novel feedback network can provide a temperature-compensated output over the full range of selectable output voltages.

Abstract: A reference circuit (200') has bipolar transistors (216, 226) providing a voltage difference .DELTA.V of base-emitter voltages .vertline.V.sub.BE .vertline. and has resistors (210/R.sub.1, 220/R.sub.2) for adding a current I.sub.R1 resulting from .DELTA.V and a current I.sub.R2 resulting from of base-emitter voltage .vertline.V.sub.BE .vertline. of one bipolar transistor (216 or 226) so that a resulting temperature coefficient TC.sub.TOTAL of said currents I.sub.R1 and I.sub.R2 is compensated. The circuit (200') has voltage transfer units (260, 270) which transfer .DELTA.V to the resistors (210/R.sub.1, 220/R.sub.2) so that the resistors (210/R.sub.1, 220/R.sub.2) do not substantially load the bipolar transistors (216, 226). The voltage transfer units (260, 270) have input stages with n-channel FETs. A control unit (241) which is coupled to the bipolar transistors (216, 226) adjusts input voltages (.vertline.V.sub.CE .vertline.

Abstract: For use in a switch-mode power converter including parallel-coupled first and second switches, the first switch having a temperature-dependent resistance, a circuit for, and method of, distributing current between the first and second switches. In one embodiment, the circuit includes a device having a temperature-dependent characteristic, in thermal communication with the first switch and electrically coupled to a gate of the first switch, that senses a temperature of the first switch, modulates an amplitude of a drive waveform applied to the gate based on the temperature and thereby redistributes the current.

Abstract: A current reference device in integrated circuit form with a reference resistor includes a first MOS transistor and a second MOS transistor having the same type of conductivity, the first transistor having its gate and its drain connected together to a first terminal of the reference resistor, the second transistor having its gate and its drain connected together to a second terminal of the reference resistor, the first transistor having a threshold voltage greater than that of the second transistor, these two transistors being biased in saturated mode, the source of each of these transistors being biased at the same potential as the substrate or the well in which the transistor is made.

Abstract: A temperature sensor circuit of a power semiconductor component comprises temperature-sensitive elements, some (Q1, and R1 to R3) of which are located in the vicinity of an active area of the component where heat is generated by the power semiconductor device (MPWR), whereas others (such as R4, R') are located more remote from the heat-generating active area and so are in a cool location. Hot-location elements (Q1, and R1 to R3) with different temperature coefficients are present in a first comparator circuit for indicating device temperature (Tabs) in the vicinity of the heat-generating active area. Both hot-location and cool-location elements (R2 and R4) are present in a second comparator circuit for indicating when a temperature gradient (Tdiff) threshold occurs.

Abstract: An integrated circuit and method are provided for generating current for low power applications. The integrated circuit preferably includes a current generating circuit responsive to a supply voltage for generating a first reference current and a temperature compensating voltage controlling circuit for generating a temperature compensated voltage control signal during temperature variations. A bias controlling circuit is preferably connected to the current generating circuit and the temperature compensating voltage control circuit for biasingly controlling the temperature compensating voltage control circuit. A current output controlling circuit is connected to the current generating circuit and the temperature compensating voltage controlling circuit for controlling a second temperature compensated reference current responsive to the temperature compensated voltage control signal so as to generate a high output source current even during low temperature conditions.

Abstract: Temperatures on a chip, including particular regions of a chip are monitored by sensing changes in sub-threshold conduction of a field effect transistor (FET) integrated on the chip due to changes in charge carrier population distribution with temperature therein. Such changes in sub-threshold current with temperature are preferably detected using a current mirror and two FETs with different channel geometry and slightly different gate voltages such that the currents are equal at a specific design temperature. The slightly different gate voltages are conveniently provided by a low current voltage divider with or without on-chip voltage regulation in which resistor ratios can be accurately and repeatably obtained. Variations from that temperature thus yield large current differences and substantial signal swing which improve noise immunity. Hysteresis can be applied to the output (or amplified output) of the current mirror to obtain bistable thermostat-like action.

Abstract: A reference generator implemented in a MOS technology integrated circuit comprises a current mirror device having three pairs of transistors connected so as to obtain a stable voltage at the mid point of its second arm. This same generator also supplies a stable current.

Abstract: A pulse timer circuit comprising a monostable multivibrator which includes two complementary transistors Q5, Q6, has the advantage of good tolerance to temperature fluctuation owing to the provision of a Schottky diode D4 connected between the emitter and base of one of the transistors Q5. The Schottky diode, D4, which has a temperature coefficient matched to that of the transistor Q5, ensures that the output pulse width from the monostable is unaffected by fluctuations in ambient temperature.

Abstract: In a reference voltage generating circuit, a standardized constant voltage measured on the basis of a low power supply voltage as a reference is generated by a constant voltage source connected between a high power supply voltage and the low power supply voltage. The standardized constant voltage is divided by a series circuit composed of first and second resistors sandwiching first and second transistors therebetween, for generating a divided voltage, which is then supplied to a current source composed of a third transistor. A current flowing through the current source is converted into an output voltage measured on the basis of the high power supply voltage as a reference, by third and fourth resistors series-connected to sandwich the third transistor therebetween. The output voltage is converted, by an emitter follower composed of a fourth transistor having a base receiving the output voltage, into a reference voltage measured on the basis of the high power supply voltage as a reference.

Abstract: In a bandgap reference circuit (200), a base-emitter voltage V.sub.BE with a first temperature coefficient TC.sub.1 is added to a voltage difference .DELTA.V with a second, opposite temperature coefficient TC.sub.2 by two resistors (210,220). The bandgap reference circuit (200) comprises current sources (271-276) and bipolar transistors Q(1) to Q(K) (281-286) of pnp-type and npn-type. Current densities in Q(1) to Q(6) are distributed so that some base-emitter voltages V.sub.BEk in Q(1) to Q(6) are different. The bases and emitters of Q(1) to Q(6) are serially coupled so that pn-junctions are arranged in a alternative directions, thus adding only the differences of V.sub.BEk but not adding their absolute values. This feature makes the circuit (200) applicable in a low voltage environment. The ratio between the two resistors (210,220) can have a value which minimizes noise voltages V.sub.N so that external filtering capacitors are not required.

Abstract: A temperature set point circuit employs a pair of bipolar transistors operated at unequal current densities, with the difference between the transistors' base-emitter voltages appearing across a trim resistor connecting their emitters. A pair of trim resistors, one of which may be external to an integrated circuit embodiment of the set point circuit, forms a resistor divider with the inter-base resistor and are selected to produce a desired temperature trip-point.

Abstract: A voltage reference circuit that will remain constant and independent of changes in the operating temperature that is correlated to the bandgap voltage of silicon is described. The voltage reference circuit will be incorporated within an integrated circuit and will minimize currents into the substrate. The bandgap voltage reference circuit has a bandgap voltage referenced generator that will generate a first referencing voltage having a first temperature coefficient, and a compensating voltage generator that will generate a second referencing voltage having a second temperature coefficient. The second temperature coefficient is approximately equal and of opposite sign to the first temperature coefficient. A voltage summing circuit will sum the first referencing voltage and the second referencing voltage to create the temperature independent voltage.

Abstract: A reference voltage generating circuit has a divider circuit for decreasing a received external power-supply voltage and for providing the decreased voltage at a reference voltage output terminal. A PMOS transistor clamps the reference voltage at a predetermined voltage level, one end thereof being coupled to the reference voltage output terminal and the other end being coupled to a ground. A compensating unit adjusts the substrate voltage of the PMOS transistor to compensate for level variations of the reference voltage in response to the level variations. Thus, variations in the reference voltage caused by changes in processing variables are compensated, thereby maintaining the reference voltage at a predetermined level.

Abstract: A temperature compensated resistance current generator. The generator provides temperature compensated reference current in a digital CMOS environment where resistors with positive temperature coefficients are not available, and where temperature coefficients are large. The current generator has two current sources and a subtraction circuit which subtracts the current from one current source from the current from the other current source to create a primary current. A proportionality circuit multiplies the primary current by a constant to produce the generator output.

Abstract: A voltage-to-current converter for use with a bandgap voltage reference circuit for providing a correction current to compensate for the adverse effects of temperature. In one specific embodiment, the voltage-to-current converter is used to provide output voltage curvature correction to the resident bandgap voltage reference circuit.

Abstract: In a power supply circuit for driving one IC chip on which first and second semiconductor circuit sections are formed integrally with each other as an IC, and wherein the first semiconductor circuit section has a delay circuit formed by an IC for giving a highly accurate delay time to a signal propagating through the delay circuit, and the delay time of the delay circuit varies with a change in the power consumption of the second semiconductor circuit section and a fluctuation in the power supply voltage which is supplied to the first semiconductor circuit section, there are provided a first power supply circuit for supplying an operating voltage to the first semiconductor circuit section and a second power supply circuit for supplying an operating voltage to the second semiconductor circuit section and for controlling to change the output voltage of the first power supply circuit.

Abstract: A temperature-compensating method of a resistance bridge circuit constructed of a plurality of resistance devices, comprises: a first step of adjusting in direction and in curvature a temperature characteristic curve of an output signal issued from the resistance bridge circuit in which a resistor for temperature compensation is connected in parallel with one of a pair of the resistance devices, the pair being disposed in adjacent arms of the resistance bridge circuit; and a second step of applying an additional signal to the output signal of the resistance bridge circuit so as to offset the temperature variation of the output signal of the resistance bridge circuit.

Abstract: A monolithic power control circuit is disclosed that includes a switching element and a control circuit that senses a voltage drop across the switching element and that adjusts a duty cycle of the switching element. The monolithic circuit includes a compensation circuit that adjusts a contribution of the sensed voltage drop across the switching element in response to temperature changes of the switching element.

Abstract: A reference voltage generator having a dual slope temperature characteristic, for use in an automotive alternator voltage regulator, comprises a bandgap circuit (R1,R2,R3,R4) which generates a voltage (A) having a thermal drift coefficient of zero and a voltage (B) having a non-zero thermal drift coefficient. These voltages are applied to a voltage divider (R5,R6) and a voltage-follower type of circuit (OPA1). A unidirectional conduction amplifier circuit (OPA2) has an input terminal connected to an intermediate point (C) on the voltage divider. A second voltage divider (R7,R8) is connected between the output terminals of the voltage-follower circuit (D) and the amplifier circuit (E) . An intermediate node (F) of the second voltage divider is coupled to an output terminal (VREF) of the generator.

Abstract: A reference voltage generation circuit for a semiconductor memory device comprising a reference voltage generator for generating first and second reference voltages, the first and second reference voltages having the opposite response characteristics with respect to a variation in a temperature or a supply voltage, a start-up circuit for determining an initial condition of the reference voltage generator in response to the supply voltage to stabilize the operation of the reference voltage generator, and a voltage amplifier for compensating a target reference voltage for the temperature variation in response to the first and second reference voltages from the reference voltage generator so that the target reference voltage can always be constant in level. The first reference voltage has a positive response characteristic with respect to the temperature and the supply voltage and the second reference voltage has a negative response characteristic with respect to the temperature and the supply voltage.