Abstract: Provided is a voltage regulator for limiting a rush current from an output stage transistor. The voltage regulator includes an output current limiting circuit having a low detection current value and an output current limiting circuit having a high detection current value, and is structured so as to enable operation of the output current limiting circuit having a low detection current value during a time period from a state in which an overheat protection circuit detects overheat and an output current is stopped to a state in which an overheat protection is canceled and a predetermined time passes. Accordingly, after the overheat protection is cancelled, an excessive rush current can be limited.

Abstract: A hierarchical control for an integrated voltage regulator may include a voltage regulator circuit with a plurality of parallel voltage cells, with each of the cells having a plurality of phases of interleaved voltage converters, and a feedback control associated with the cells to set identical current references for the phases. A multi-rail embodiment has a plurality of parallel voltage regulator circuits each with a plurality of parallel voltage cells, with each of the cells having a plurality of phases of interleaved voltage converters, and a feedback control associated with the circuits to sense parameters of the circuits and set identical parameter references for the phases.

Abstract: A reference circuit comprises a first current generator comprising a first transistor operably coupled to a second transistor and having respective base current corresponding to a positive temperature dependence of the reference circuit. A resistance is operably coupled to the first current generator and arranged to provide a second current corresponding to a negative temperature dependence of the reference circuit. A second current generator is operably coupled to the resistance and the first current generator that generates a combined current as a sum of the second current and base current. In this manner, the output voltage of the curvature compensated voltage and/or current reference circuit is substantially linear and substantially independent of the operating temperature of the circuit.

Abstract: Provided is a temperature compensating circuit, which conducts a temperature correction having a continuous characteristic, and is small in the circuit scale. An output voltage VOUT at a connection point 14 is determined on the basis of a current Ia2, a current Ib2, and a current Ic2, and an output voltage of a temperature sensor circuit is corrected by the output voltage VOUT with a temperature. As a result, the temperature correction having the continuous characteristic is conducted on the basis of a current change of the current Ia2, the current Ib2, and the current Ic2. Because the plural temperature compensating circuits are not provided, and only one temperature compensating circuit is provided, the circuit scale becomes smaller.

Abstract: A BGR circuit includes a temperature-proportional current generating part configured to generate a current in proportion to a change in temperature through a plurality of current paths; a temperature-inverse proportional current generating part generates a current in inverse proportion to a change in temperature through a plurality of current paths. An internal voltage reference voltage generating part generates a reference voltage for an internal voltage using the current of the temperature-proportional current generating part and the current of the temperature-inverse proportional current generating part. A temperature voltage output part outputs a voltage corresponding to a change in temperature.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A photocurrent sensing circuit includes a logarithmic compression circuit; a cancellation circuit logarithmically compressing a current substantially equal in temperature coefficient of the photocurrent to convert the same into a voltage, and performing an addition or a subtraction on the converted voltage and a voltage converted from a photocurrent by logarithmically compression; a logarithmic operation circuit logarithmically compressing the voltage received from the cancellation circuit to produce a first voltage, logarithmically compressing a voltage proportional to a thermal voltage of the photocurrent to produce a second voltage, logarithmically compressing a current having thermal dependence of nearly zero to produce a third voltage and performing an addition or a subtraction of each of the second and third voltages with respect to the first voltage to produce a fourth voltage; and an inverse logarithmic transformation circuit performing inverse logarithmic transformation on the fourth voltage to outpu

Abstract: A current detector circuit for detecting a load current flowing through a load includes a first series circuit having a first element and the load connected in series, a second series circuit having a second element and a resistor connected in series, the second element having a temperature characteristic equal to the temperature characteristic of the resistance of the first element, a power supply configured to supply voltage to the first series circuit and the second series circuit, and a control circuit configured to control the voltage drop across the second element so that the voltage drop across the second element is equal to the voltage drop across the first element. A current detection signal corresponding to the load current is generated based on a current flowing through the second element.

Abstract: Circuits and methods for paralleling voltage regulators are provided. Improved current sharing and regulation characteristics are obtained by coupling control terminals of the voltage regulators together which results in precise output voltages and proportional current production. Distributing current generation among multiple paralleled voltage regulators improves heat dissipation and thereby reduces the likelihood that the current produced by the voltage regulators will be temperature limited.

Abstract: A system includes a transistor coupled to a voltage rail, a first resistor coupled in series with the transistor, and a second resistor coupled in series with the first resistor. The system also includes a bandgap reference circuit operable to generate a bandgap reference voltage of less than 1.2 volts (such as one volt) between the first and second resistors. The bandgap reference circuit includes a diode configured to generate a complementary-to-absolute-temperature (CTAT) voltage and a third resistor configured to generate a first proportional-to-absolute-temperature (PTAT) voltage using a first current. The bandgap reference circuit also includes a current source configured to sink a CTAT current from the first current to generate a second current and a fourth resistor configured to generate a second PTAT voltage using the second current. A sum of the CTAT voltage, the first PTAT voltage, and the second PTAT voltage is less than 1.2 volts.

Abstract: The present invention concerns a reference voltage generator (40) that provides a reference voltage (Vref new). The voltage generator (30) is operated at a supply voltage (Vdd) being lower than the Silicon bandgap voltage. It comprises a MOSFET transistor (MN; MN3; MP4; MP7) serving as transconductor (Gptat). An input node for feeding a drain current (Iptat) into the drain of said MOSFET transistor (MN; MN3; MP4; MP7) is provided and an output node is connected to the drain and gate of said MOSFET transistor (MN; MN3; MP4; MP7). A current generator (42) allows the MOSFET transistor (MN; MN3; MP4; MP7) to be operated in a specific mode where the drain current (Iptat) has a positive temperature coefficient (?ptat) and the transconductor (Gptat) has a negative temperature coefficient (?ptat).

Abstract: Techniques to compensate for parameter variations in a feedback circuit are disclosed. In one embodiment, a regulator circuit includes an energy source coupled to output a generated current in response to a control current. A feedback resistor is coupled to an output of the regulator circuit. The feedback resistor is coupled to conduct a feedback current responsive to the output of the regulator circuit. A current amplifier is coupled to the feedback resistor to generate the control current in response to the feedback current. A compensation network is coupled to the current amplifier to adjust the control current in response to an extrinsic parameter of the regulator circuit. The compensation network includes a transistor and first, second and third resistors. The first resistor is coupled between the feedback resistor and a collector of the transistor. The second resistor coupled between the collector and the base of the transistor.

Abstract: A temperature sensor includes a proportional to absolute temperature (PTAT) current generator configured to generate a first current proportional to temperature, a first complementary to absolute temperature (CTAT) current generator configured to generate a second current inversely proportional to temperature, a second CTAT current generator configured to generate a third current inversely proportional to temperature, and a temperature sensing unit configured to convert the first current, the second current, and the third current into a signal related to the temperature.

Abstract: A temperature sensing circuit includes first, second and third proportional to absolute temperature (PTAT) units, and first and second subtracters. The first PTAT unit generates a first output voltage based on a reference current and a current of N times the reference current, where N is an emitter current density ratio. The second PTAT unit generates a second output voltage based on a current of twice the reference current and a current of 2N times the reference current. The third PTAT unit generates a third output voltage based on the reference current and a current of N times the reference current. The first subtracter performs subtraction on the second output voltage and the third output voltage, and the second subtracter performs subtraction on an output voltage of the first subtracter and the first output voltage.

Abstract: A power detector having temperature compensation for improved measurement performance includes a pair of rectifier transistors coupled to a differential input signal biased by a first temperature dependent current. An output of the pair of rectifier transistors provides a first component of a differential DC output signal. The first component of the differential DC output signal includes a DC voltage proportional to an amplitude of the differential input signal plus an offset voltage. The power detector further includes a reference transistor biased by a reference current. The reference current includes a second temperature dependent current and a temperature independent offset current for temperature compensation. An output of the reference transistor provides a second component of the differential DC output signal that includes a reference voltage.

Abstract: A temperature setpoint circuit comprises bipolar transistors Q1 and Q2 which receive currents I1 and I2 at their respective collectors and are operated at unequal current densities, with a resistance R1 connected between their bases such that the difference in their base-emitter voltages (?Vbe) appears across R1. An additional PTAT current I3 is maintained in a constant ratio to I1 and I2 and provided to the collector of Q2 while Q2 is off, and is not provided while Q2 is on. The circuit is arranged such that Q2 is turned on and conducts a current equal to Ia when: ?Vbe=(kT/q)ln(NI1/Ia), where Ia=I2+I3, the temperature T at which ?Vbe=(kT/q)ln(NI1/Ia) being the circuit's setpoint temperature, such that the switching of current I3 provides hysteresis for the setpoint temperature which is approximately constant over temperature.

Abstract: The present invention is directed to a device and method for generating a reference voltage. A reference voltage generator comprises a first circuit, a second circuit, and an external device. The first circuit generates a positive temperature coefficient voltage. the second circuit is coupled to the first circuit, biased with a substantially constant current, produces a negative temperature coefficient voltage, and combines the negative temperature coefficient voltage with the positive temperature coefficient voltage as a reference voltage. The external device is coupled to the second circuit, and yields the substantially constant current.

Abstract: In a system for performing a dual mode single temperature trim upon an electronic device to remove combined mismatch and process variation errors, a dynamic element matching control is configured for enabling dynamic element matching of components of the electronic device. A process trim module is configured for performing a process trim to remove a temperature dependant error from the electronic device while the dynamic element matching is enabled within the electronic device. A mismatch trim module is configured for performing a mismatch trim to remove a mismatch error from the electronic device after the process trim has been performed. The mismatch trim is performed on a portion of the electronic device for which the dynamic element matching has been disabled. Additionally, the mismatch trim is performed at substantially an equivalent temperature to a temperature at which the process trim was performed.

Abstract: A constant-voltage power supply circuit unit that is fed from a vehicle-borne battery via a power switch and generates a predetermined constant-voltage output Vcc includes a power transistor and an output voltage regulating circuit unit. The output voltage regulating circuit unit includes a reference voltage generating circuit, a comparison amplifying circuit, a resistance circuit network, a non-volatile second data memory that selectively continues plural open/close elements provided in the resistance circuit network, and a temperature detector. The quantity of variation of output voltage with respect to ambient temperature detected by the temperature detector is estimated, and a setting voltage is corrected to be approximate to a predetermined output voltage, or conversion correction of AD conversion data is performed on the basis of voltage variation characteristics of an analog sensor.

Abstract: A self-regulating heater including a semiconductor for converting electrical energy to heat. A temperature sensitive element is used to bias the semiconductor as a function of temperature. The heating element has an advantage that its maximum temperature is limited by the biasing network, yet full power is available just below the limit.

Abstract: A non-linearity compensation circuit and a bandgap reference circuit using the same for compensating non-linear effects of a reference voltage are provided. In the non-linearity compensation circuit, the reference voltage is transformed into a temperature independent current. A current mirror mirrors the temperature independent current for biasing a bipolar junction transistor (BJT). Further, two resistors are used for estimating a non-linear voltage, so as to compensate the reference voltage.

Abstract: A stabilized DC power supply circuit of the present invention includes an output current limiting circuit for limiting an output current of an output transistor, and a correction circuit for correcting variation of restriction in the output current caused by variation in a current amplification factor of the output transistor. The correction circuit includes a correcting transistor that is manufactured in the same manufacturing process as the output transistor and formed so as to have the same tendency of manufacturing process variation in current amplification factor etc. as that of the output transistor.

Abstract: A device and method of providing thermal compensation for integrated circuits, e.g., complementary metal-oxide semiconductor integrated circuits (“IC”) is described. The device is an IC (e.g., digital, analog, and mixed-signal circuits) with a digital voltage control system (“VCS”) having a temperature-adaptive digital DC-to-DC power converter. In one embodiment, the DC-to-DC converter includes a power stage, which converts a voltage of an input power source to a variable supply voltage, a delay-line-based temperature sensing circuit that continuously monitors temperature changes, and adjusts the frequency and process speed of the IC to compensate for any performance degradation caused by thermal effects by adjusting the voltage supplied to the IC to increase or decrease the frequency and process speed of the IC in proportion to any abnormal temperature changes in the IC.

Abstract: In a DC-to-DC converter, a current sense circuit and method generate a first current by a first transconductive amplifier responsive to the output current of the converter for a controller to switch a high side switch and a low side switch, a second current from a first voltage by a second transconductive amplifier, a second voltage from the second current by an adjustable resistor, and a bias signal from a difference between the second voltage and a third voltage by a bias apparatus to adjust the transconductances of the first and second transconductive amplifiers.

Abstract: An object of this power supply device is to enable an overheat protection level and an overvoltage protection level to be set accurately.

Abstract: A voltage reference circuit including a positive temperature coefficient current generator, a negative temperature coefficient current generator, and a first resistor is provided. In the positive temperature coefficient current generator, two transistors are operated in the weak inversion region, and a second resistor is connected in series between the gates of the two transistors. The second resistor employs the characteristic that a transistor operated in weak inversion region acts like a bipolar junction transistor to generate a positive temperature coefficient current. The negative temperature coefficient current generator generates a negative temperature coefficient current in response to a negative temperature coefficient voltage drop on a third resistor. The positive temperature coefficient current and the negative temperature coefficient current flow through the first resistor together, thus producing a stable reference voltage.

Abstract: A circuit of the invention comprises a low voltage PTAT source. Current generators (t1, t2) are controlled so that their output currents I1 and I2, respectively, have temperature properties of the quotient VPTAT/R. The current I1 is conducted to a first terminal (X) on a first connection of a composition of series connected resistors (Ra, Rb), a second connection thereof being grounded. A transistor (T) is diodelike forward connected between the first terminal (X) and the ground. The current I2 is conducted to a second terminal (Y), preferably being at the same time a common connection (Z) of the resistors (Ra, Rb). Reference voltage Vr is tapped from the connection (Z). Said resistors (Ra, Rb) are manufactured in the n?-well technology in the same way as the resistor (R), with the resistance of which the mentioned quotient is generated.

Abstract: In a voltage regulator including an inductor current flowing through a sense element with a first temperature coefficient, and a current sense circuit for generating a current sense signal related to the first temperature coefficient by sensing the inductor current from the sense element, a temperature compensation device and method determines a second temperature coefficient according to the first temperature coefficient and temperature variation, and produces a compensation signal with the second temperature coefficient to compensate variations in the current sense signal caused by the first temperature coefficient.

Abstract: A curvature corrected bandgap reference circuit comprises a first bipolar transistor having a base-emitter voltage Vbe1 and operated such that it has a constant operating current, and a second bipolar transistor having a base-emitter voltage Vbe2 and operated such that it has an operating current consisting of an approximately temperature proportional component and a non-linear component. The circuit is arranged such that the ratio of the current densities in the two transistors varies with temperature, such that the difference voltage (?Vbe=Vbe1?Vbe2) includes a residual component which approximately compensates bandgap curvature error.

Abstract: A bandgap voltage regulator is arranged such that, when a desired output voltage is present between its output and common terminals, current densities in a pair of bipolar transistors having unequal emitter areas are maintained in a fixed ratio. The difference in the transistors' base-emitter voltages is across a resistor, which thus conducts a PTAT current. The regulator also generates a CTAT current, and both the PTAT and CTAT currents are made to flow in another resistor, with the resulting voltages added by superposition. The regulator's resistors are sized such that Vout is an integral or fractional multiple of Vbg, where Vbg is the bandgap voltage for the fabrication process used to make the regulator's transistors, such that Vout is temperature invariant, to a first order. The resistors are preferably realized using unit resistors having a predetermined resistance, or series and/or parallel combinations of unit resistors.

Abstract: A system and method are provided for monitoring temperature within a specified integrated circuit. Usefully, the system comprises at least one oscillator device proximate to the integrated circuit for generating signal pulses at a frequency that varies as a function of the temperature adjacent to the oscillator device. The system further comprises a control unit for establishing sample acquisition periods of invariant time duration based on an time invariant reference clock. A sampling component is coupled to count the number of pulses generated by the oscillator device during each of a succession of the time invariant sample acquisition periods, and a threshold component responsive to the respective count values for the succession of sample acquisition periods provides notice when at least some of the count values have a value associated with a prespecified excessive temperature level.

Abstract: A bandgap reference voltage circuit is provided, in which an additional resistor as well as a transistor is utilized to prevent the source-drain voltage of a metal oxide semiconductor field effect transistor electrically connected to an output terminal of the bandgap reference voltage circuit from falling into the triode region. Through the provided bandgap reference voltage circuit, the temperature compensation effect is able to be normally executed, so as to supply a stable bandgap reference voltage.

Abstract: A bandgap reference circuit. In the bandgap reference circuit, a current generator includes a first bipolar junction transistor (BJT) and generates a first positive temperature coefficient current thereby producing a negative temperature coefficient voltage between a base terminal and an emitter terminal of the first bipolar junction transistor. A single-end gain amplifier includes a positive input terminal coupled to the emitter terminal of first the bipolar junction transistor. A first resistor is coupled between the output terminal of the single-end gain amplifier and an output terminal of the bandgap reference circuit to generate a first current. A current-to-voltage converter is coupled to the first resistor to convert the first positive temperature coefficient current and the first current to a bandgap voltage.

Abstract: An apparatus and method for producing an output reference voltage is provided. A voltage divider is configured to provide the output reference voltage from a bandgap reference voltage. The bandgap reference voltage is applied across a biased portion of the voltage divider. Additionally, a second-order temperature coefficient (TC) of the impedance of a controllable portion of the voltage divider is adjusted in response to a second-order trim signal. The first and zeroth order TCs of the controllable portion of the voltage divider are substantially independent of the second-order trim signal. In one embodiment, the controllable portion includes a resistor digital-to-analog converter (DAC) that is responsive to the second-order trim signal. The resistor DAC includes at least two different types of resistors. The second-order TCs of the two different types of resistors are substantially different.

Abstract: A reference voltage generator includes a plurality of signal generators for producing N+1 signals respectively corresponding to N+1 temperature dependent characteristics, a combining module coupled to the signal generators for combining the N+1 signals to form a combined signal, and a signal to voltage converter coupled to the combining module for generating a compensated reference voltage according to the combined signal. The signal generators include N+1 devices having p-n junctions and each device has a specific temperature dependent characteristic corresponding to the voltage across a p-n junction, such as the base-emitter voltage of a transistor. By scaling the N+1 signals, a reference voltage at a predetermined value is generated and has Nth order temperature compensation.

Abstract: There is provided a reference voltage generator that generates a constant reference voltage regardless of a change in temperature. The reference voltage generator includes a temperature-compensated current generating part for reducing a supply current provided to an output terminal in response to an increase of temperature, and a diode for receiving the supply current through the output terminal.

Abstract: A voltage regulation circuit. The voltage regulator includes an input stage, a reference voltage circuit, a gain stage, and an output stage. The reference voltage circuit is coupled to one input of the input stage, and the output stage is coupled to another input of the input stage. The gain stage includes a buffer device coupled to the output of the input stage and a drive circuit coupled to the output stage. The buffer device is operable to provide isolation between the input stage and the drive circuit. The drive circuit may include a first transistor coupled to the output stage, a base current translation circuit, and a current divide circuit coupled to the first transistor and to said base current translation circuit. The input stage may be biased with a substantially constant bias current, such that output dependent current loading effects are avoided.

Abstract: A system and method is disclosed for providing a bandgap reference voltage generator that can successfully operate with a low operating voltage. Three current sources are controlled to provide same amount of current through three paths. The first current source is used to enable a first negative temperature coefficient module, while the second and third current sources are used to enable a first positive temperature coefficient module. The three current sources together are used to enable a reference voltage output module, which is connected to a current summing module for producing a bandgap reference voltage independent of temperature variations.

Abstract: A temperature compensated low voltage reference circuit can be realized with a reduced operating voltage overhead. This is accomplished in several ways including minimizing drain voltage variation at the drains of two inter-connected transistors and implementing a current conveyer in order to adjust the temperature coefficient of an output current or voltage. Various combinations of voltage minimization and temperature coefficient adjustments may be used to design a reference circuit to a circuit designer's preference. A temperature compensated current source may also be created. The temperature compensated current source may be used to provide a wide range of output voltages. All of the reference circuits may be constructed with various types of transistors including DTMOS transistors.

Abstract: An operational amplifier having temperature-compensated offset correction. The amplifier includes an operational amplifier circuit, that has a first input field effect transistor (FET) having a gate connected to receive a first input signal, and a second input FET having a gate connected to receive a second input signal, the first and the second input FETs being connected together to receive a first bias current, and also being connected to respective sides of a first current mirror. A correction amplifier circuit is also provided, that has a first correction FET having a gate, and a second correction FET having a gate, the first and the second correction FETs being connected together to receive a second bias current, and also being connected to respective sides of a second current mirror.

Abstract: A thermal shutdown circuit board integrated circuit device. The thermal shutdown circuit includes a current source for receiving a current bias and generating an output current in accordance therewith. The current source is configured to produce the output current in a manner proportional to absolute temperature. A current mirror is coupled to the current source. The current mirror is configured to mirror the output current from the current source and is configured to have a high output impedance. A thermal shutdown transistor is coupled to control one output of the current mirror. The thermal shutdown transistor is also coupled to receive the output current and shutdown the output current at a temperature threshold in a manner dependent on shutdown circuit operating temperature.

Abstract: A method and circuit are shown for generating a higher order compensated bandgap voltage is disclosed, in which a first order compensated bandgap voltage and a linearly temperature dependent voltage are generated. Thereafter, a difference between the linearly temperature dependent voltage and the first order compensated bandgap voltage is generated. The resulting difference voltage is squared, and finally the squared voltage is added to the first order compensated bandgap voltage, resulting in a higher order compensated bandgap voltage. There is also disclosed a higher order temperature compensated bandgap circuit.

Abstract: A power circuit supplies a plurality of voltages to a display-device-driving circuit for time-division-driving a display device. Each of the plurality of voltages are output via a constant-voltage circuit constituted by a regulator for dividing a voltage supplied from a power source and keeping the divided voltages at a certain voltage level, whereby a stable power source consuming a small amount of power when supplying power to a driving circuit as a power source for a display device to be time-division-driven can be obtained.

Abstract: A current source for providing a current proportional to absolute temperature (a PTAT current) with high precision is implemented using only one off-chip component. The current source utilizes a bandgap voltage, a voltage related to a current proportional to absolute temperature and a constant current to bias a pair of voltage controlled resistive devices. In operation, a known resistance is derived by applying a constant voltage across and a constant current through a first voltage controlled resistive device. A control voltage for maintaining the constant current through the first voltage controlled resistive device is applied to control the second voltage controlled resistive device, thereby generating the highly precise PTAT current at the second voltage controlled resistive device. In one embodiment, the current source uses only one off-chip resistor in a constant current source for generating the constant current.

Abstract: Several methods to obtain process insensitive base-emitter forward voltage of a transistor are described. The main concept is to recognize that the transistor current gain is the parameter that affects this voltage the most with normal process variations. The use of transistor driven with known base current removes this error. In alternative, a method for compensating the base-emitter forward voltage variations is described. This is applicable to analog integrated circuits that utilize the base-emitter forward voltage of a transistor and in particular in applications that make use of either accurate voltage references, thermal sensing elements, solid state thermostats and very common thermal shutdown protection circuits.

Abstract: Disclosed herein is a voltage regulator, and related method, for regulating a boost voltage generated by a boost circuit. In one embodiment, the voltage regulator includes a regulated voltage input operable to receive a regulated voltage derived from the boost voltage, a reference voltage input operable to receive a constant reference voltage, and an output node operable to provide a feedback signal to the boost circuit for controlling the generated boost voltage. In addition, the voltage regulator includes at least one transistor coupled to the regulated voltage input, the reference voltage input, and the output node, and operable to produce the feedback signal based on a comparison of the regulated voltage to the reference voltage.

Abstract: There is provided a power circuit for a display-device-driving circuit for supplying a plurality of voltages to a driving circuit for time-division-driving a display device, wherein each of the plurality of voltages are output via a constant-voltage circuit constituted by a regulator for dividing a voltage supplied from a power source and keeping divided voltages at a certain voltage level, whereby a stable power source consuming a small power to a driving circuit as a power source for a display device to be time-division-driven can be obtained.

Abstract: Voltage generating apparatus includes a positive temperature coefficient current generating module, a negative temperature coefficient current generating module, a fine-tune current module and a voltage output module. The function of the positive temperature coefficient current generating module and the negative temperature coefficient current generating module, which take advantage of characteristics of MOS devices operated in the sub-threshold region, is to generate a stable current of positive temperature coefficient and a stable current of negative temperature coefficient, respectively. The current fine-tune module increases or decreases output current of the negative temperature coefficient current generating module. The voltage output module sums two output currents of the positive temperature coefficient current generating module and the negative temperature coefficient current generating module and transforms the total current into output voltage that is stable under temperature and process variation.

Abstract: Each of stages RS(1), RS(2), . . . of a shift register is constituted by six TFTs. A ratio of a channel width and a channel length (W/L) of each of these TFTs 1 to 6 is set in accordance with a transistor characteristic of each TFT in such a manner that the shift register normally operates for a long time even at a high temperature.

Abstract: A current-sensing and correction circuit having programmable temperature compensation circuitry that is incorporated into a pulse width modulation controller of a buck mode DC—DC converter. The front end of the controller contains a sense amplifier, having an input coupled via a current feedback resistor to a common output node of the converter. The impedance of a MOSFET, the current through which is sampled by a sample and hold circuit is controlled by the sense amplifier unit. A sensed current correction circuit is coupled between the sample and hold circuit and the controller, and is operative to supply to the controller a correction current having a deterministic temperature-compensating relationship to the sensed current. The ratio of correction current to sensed current equals to value of one at a predetermined temperature, and has other values at temperatures other than at that temperature.