Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: Embodiments related to magnetoresistive angle sensor layouts having reduced anisotropic magneto resistance (AMR) effects. Embodiments provide magnetoresistive angle sensor layouts that reduce or eliminate distortion related to AMR effects, can be more easily scaled up or down, and are more compact to use available surface area more efficiently.

Abstract: A magnet is disposed on one face of a hollow section which is the conveyance path of an object of detection, and has a magnetic pole of designated length along the conveyance direction of the object of detection. A magnetic body is disposed along the conveyance direction opposite the magnet with the hollow section therebetween, and generates a cross magnetic field that crosses the hollow section formed between the magnetic body and the magnet. An anisotropic magnetoresistance element is disposed on the side of the magnetic body carrier facing the hollow section, and has magneto-sensing action in the conveyance direction.

Abstract: A flexible current and voltage sensor provides ease of installation of a current sensor, and optionally a voltage sensor in application such as AC branch circuit wire measurements, which may require installation in dense wiring conditions and/or in live panels where insulating gloves must be worn. The sensor includes at least one flexible ferromagnetic strip that is affixed to a current sensing device at a first end. The second end is secured to the other side of the current sensing device or to another flexible ferromagnetic strip extending from the other side of the current sensing device to form a loop providing a closed pathway for magnetic flux. A voltage sensor may be provided by metal foil affixed to the inside of the flexible ferromagnetic strip. A clamp body, which can be a spring loaded handle operated clamp or a locking fastener, can secure the ferromagnetic strip around the wire.

Abstract: Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.

Abstract: Provided is a magnetic sensor device capable of attenuating the intensity of the magnetic field to be applied to the magnetic sensor. A magnetic sensor device includes a magnetic sensor element which detects the intensity of a magnetic field in a predetermined detection axis direction, and a magnetic field attenuation body which includes a first magnetic field attenuation unit and a second magnetic field attenuation unit, each of the attenuation units having a surface and the surfaces being opposed to each other with the magnetic sensor element therebetween.

Abstract: A method for producing printed magnetic functional elements for resistance sensors and printed magnetic functional elements. The invention refers to the field of electronics and relates to a method for producing resistance sensors, such as can be used, for example, in magnetic data storage for read sensors or in the automobile industry. The disclosure includes a simple and cost-effective production method and to obtain such printed magnetic functional elements with properties that can be adjusted as desire, in which a magnetic material is deposited onto a substrate as a film, is removed from the substrate and divided into several components and these components are applied on a substrate by means of printing technologies. Aspects are also directed to a printed magnetic functional element for resistance sensors of several components of a film, wherein at least 5% of the components of the functional element have a magnetoimpedance effect.

Abstract: One embodiment of the present invention relates to a magnetic field sensor comprising a squat soft-magnetic body disposed on a surface of a substrate comprising a magnetic sensor array having a plurality of spatially diverse magnetic sensor elements disposed in a predetermined configuration. In the presence of an external magnetic field the squat soft-magnetic body becomes magnetized to generate a reactionary magnetic field. The plurality of magnetic sensor elements are respectively configured to measure a magnetic field value of a superposition of the external magnetic field and the reactionary magnetic field along a first axis (e.g., a z-axis), resulting in a plurality of spatially diverse measurements of the magnetic field component along the first axis. The plurality of spatially diverse measurements may be used to compute magnetic field components of the external magnetic field along a plurality of axes (e.g., x-axis, y-axis, and z-axis).

Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.

Abstract: The present invention relates to a magnetoresistive sensor for measuring a magnetic field. A calculation of the sensitivity to external magnetic fields is provided, and it is shown to be related to the shape anisotropy of the magnetoresistive sensing elements. Moreover, it is shown that sensitivity may be made highest when the shape of the magnetoresistive element is long parallel to the sensing axis, and a magnetic bias field strong enough to saturate the magnetoresistive element's magnetization, Hcross, is applied perpendicular to the sensing axis. A monolithic permanent magnet is provided to generate the Hcross and it may be applied at an angle in order to counteract non-ideal fields along the sense axis direction. The high sensitivity magnetoresistive element can be used in many electrical form-factors. Six exemplary bridge configurations are described herein.

Abstract: The invention relates to an integrated sensor, including terminals (1, 2) for connection to an electric generator, said terminals being connected to a metal measuring line (4, 5) in which a current proportional to the voltage or current of the generator to be measured flows, and magnetoresistors (31, 32, 33, 34). The metal measuring line includes elongate and parallel sections (4, 5) in which the current flows in opposite directions, said sections being connected to a portion (3) for closing the metal measuring line (3, 4, 5), which is arranged on a galvanic isolation layer (8) that is in turn arranged on an integrated circuit portion including the magnetoresistors (31, 32, 33, 34), each of which have a sensitive portion that is vertically adjacent to one of the elongate sections (4, 5). The sensor can be integrated into a diagnostic system.

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

Abstract: A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle.

Abstract: A magnetic-field sensor adapted to detect an external magnetic field. The magnetic-field sensor including a first chip, having a first magnetoresistive structure for detection of the external magnetic field, the first magnetoresistive detection structure including an electrical-contact pad and magnetoresistive element, and a second chip housing an integrated electronic circuit and a magnetic-field generator. The first and second chips being mutually arranged in such a way that the integrated electronic circuit can be electrically coupled to the electrical-contact pad of the magnetoresistive structure and in such a way that the magnetic-field generator can be magnetically coupled to the magnetoresistive structure.

Abstract: A current sensor includes a core arranged around a conductor, a sensing element arranged on the core and configured to generate an output variable dependent on a magnetic field in the core, and a measuring unit configured to detect the output variable and to derive a measured value of the current. The current sensor further includes a test coil arranged around the core and a test current generator connected to the test coil. The test current generator is configured to generate a test current signal of a specified amplitude and to output the test current signal to the test coil. The current sensor further includes a testing unit connected to both the measuring unit and the test current generator and configured to output information regarding the current sensor. The information is output as a test signal dependent upon comparing a first and a second measured value.

Abstract: Embodiments relate to Hall effect sensor circuits and devices that provide improved performance, such as reduced residual offset errors and/or improved S/N ratios. In an embodiment, a Hall effect sensor circuit comprises two circuit portions, a first with a higher bandwidth for higher frequencies and having an improved S/N ratio, and a second with a lower bandwidth for lower frequencies and having low residual offset. First and second Hall plates or devices are incorporated in the first and second circuit portions. The first Hall plate can be operated with a larger bias voltage and a larger, high-pass-filtered signal bandwidth, while the second Hall plate can be operated with a smaller bias voltage and a smaller, low-pass-filtered signal bandwidth. Individual output signals from each of the first and second Hall plates can be scaled and combined to provide an overall output signal with the benefits of each circuit portion, including reduced residual offset error and negligible increased noise.

Abstract: A method to measure an applied magnetic field in a plane is provided. The method includes simultaneously applying a first and second alternating drive current to a respective first and second strap overlaying a magnetoresistive sensor so the magnetoresistive sensor is subjected to a periodically rotating magnetic drive field rotating in the plane in the magnetoresistive sensor. When the applied magnetic field to be measured is superimposed on the periodically rotating magnetic drive field rotating in the plane, the method includes extracting a second harmonic component of an output voltage output from the magnetoresistive sensor. The magnitude of the magnetic field to be measured in the plane is proportional to an amplitude of the extracted second harmonic component of the output voltage. The orientation of the magnetic field to be measured in the plane is related to a phase angle of the extracted second harmonic component of the output voltage.

Abstract: A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

Abstract: Embodiments of the disclosure provide a current sensor including a conductive element and at least two magnetic field sensors. The conductive element includes at least three separate terminal areas, a common conductive area and at least three separate intermediate areas connecting the respective separate terminal areas to the common conductive area. Each of the terminal areas is connected separately via a respective separate intermediate area of the at least three separate intermediate areas to the common conductive area to guide a current applied to the respective terminal area into the common conductive area. The at least two magnetic field sensors are arranged at different geometric positions adjacent to the at least three separate intermediate areas, wherein each of the magnetic field sensors is configured to sense a magnetic field component of each current flowing into the common conductive area to provide a sensor signal based thereon.

Abstract: A current sensor includes a magnetic balance sensor including a feedback coil that is disposed in the vicinity of a magnetic sensor element whose characteristics are changed by an inducted magnetic field from a current to be measured and generates a cancellation magnetic field for offsetting the inducted magnetic field, a shunt resistant that is connected in series with a current line for circulating the current to be measured, and a switch circuit that switches to magnetic balance detection at the time of a small current and switches to shunt resistance detection at the time of a large current.

Abstract: A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion.

Abstract: The present invention relates to a magnetic sensor that provides the sensitivity adjustment on a wafer and that has a superior mass productiveness and a small characteristic variation. The magnetic sensor includes a magnetic sensitive portion provided on a substrate that is made of a compound semiconductor and that has a cross-shaped pattern. This magnetic sensitive portion includes input terminals and output terminals. At least one of input terminals of the input terminal is series-connected to a trimming portion having a compound semiconductor via a connection electrode. By performing laser trimming on the trimming portion series-connected via the connection electrode to the magnetic sensitive portion while performing a wafer probing (electric test), the adjustment of the constant voltage sensitivity is provided.

Abstract: An electronic system includes a Hall sensor to sense a controlled current. The Hall sensor is positioned proximate to a signal path and develops a voltage that includes a component corresponding to a controlled current. A controller generates a switch control signal to control conductivity of a switch, and the switch controls drive current for a load. The controller receives information either directly or indirectly from the Hall sensor corresponding to the controlled current and utilizes the information from the Hall sensor to control conductivity of the switch. Controlling conductivity of the switch controls the drive current for the load. The frequency of the switch control signal is sufficiently higher than a Hall sensor noise voltage to allow the controller to sufficiently cancel out the noise voltage for control purposes.

Abstract: A magnetic sensor includes a substrate, and a pattern forming region on the substrate, the pattern forming region having a substantially quadrangle shape. The pattern forming region includes a magnetic detection element pattern that includes a plurality of linear parts arranged parallel to each other at a predetermined inclination angle to two sides of the quadrangle shape, and a plurality of turning parts configured to alternately connect both end portions in a longitudinal direction of adjacent linear parts of the plurality of linear parts. The magnetic detection element pattern further includes a first pattern, and a second pattern with a resistance change ratio less than the first pattern. An area of the magnetic detection element pattern is less than an area of the pattern forming region in a plane view.

Abstract: The assembly for measuring at least one component (x, y, z) of an applied magnetic field (H) including a surface area made of soft-magnetic material that is applied in the chip plane and separated into two partial regions (5) by a gap (6). The gap (6) is composed of gap sections having different longitudinal directions, and magnetic field sensitive elements (2) are accommodated in one or more gap sections disposed parallel to each other. The sensitivity direction (4) of the magnetic field sensitive elements (2) and the connecting line (6?) of the outer gap openings can form angles of 45° or 90°, and several surface areas can be present in the chip plane in order to completely capture all magnetic field components (x, y, z). Magnetoresistive sensor elements can advantageously be utilized as magnet-sensitive elements (2).

Abstract: An integrated magnetic field sensor includes a magnetic field sensing element configured to generate a magnetic field sensing element output signal in response to a magnetic field. The integrated magnetic field sensor also includes a threshold control node configured to receive a control signal from outside of the integrated magnetic field sensor, wherein the integrated magnetic field sensor is configured to provide an adjustable threshold signal in response to the control signal. The integrated magnetic field sensor also includes a comparator having a first input node coupled to receive a first signal representative of the magnetic field sensing element output signal, a second input node coupled to receive a second signal representative of the adjustable threshold signal, and an output node at which is generated an output signal responsive to the first and second signals.

Abstract: The present disclosure relates to a magnetic angle sensor module having first magnetic polewheel comprising a first number of poles and a second magnetic polewheel comprising a second number of poles greater than the first number. First and second magneto-resistive sensors are located around the first polewheel at a first angular position and a second angular position, respectively. The first and second magneto-resistive sensors collectively generate sensor signals corresponding to a measured angle of the first polewheel, while the third magneto-resistive sensor generates a third sensor signal corresponding to a measured angle of the second polewheel. A signal processor receives the first and third sensor signals and operates an algorithm that determines a position within a signal curve of the second polewheel from the first sensor signal and that determines an enhanced angle from the position within the signal curve and the third sensor signal.

Abstract: A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero.

Abstract: A current detection busbar has a penetrating portion that penetrates a hole portion of a magnetic core and two flat plate-like terminal portions that are respectively continuous with opposite sides of the penetrating portion. The terminal portions have a larger width and a smaller thickness than the penetrating portion. An insulating casing has busbar holes that are penetrated by the respective terminal portions of the current detection busbar. An edge portion of each busbar hole is constituted by flat surfaces that face the terminal portion with a gap left between each flat surface and the terminal portion, a plurality of projecting portions that sandwich the terminal portion while coming into contact with the front and back surfaces of the terminal portion, and curved surfaces that face respective corner portions of the terminal portion with a gap left between each curved surface and the corresponding corner portion.

Abstract: A system includes a magnetoresistive (MR) bridge circuit, a magnetic field sensor, and an adjustable load. The MR bridge circuit receives a supply voltage and generates an output voltage that indicates a strength/direction of a magnetic field. The MR bridge circuit includes first and second MR elements connected in series between a supply node and a ground node, and third and fourth MR elements connected in series between the supply node and the ground node. The output voltage is generated between a first node that is common to the first and second MR elements and a second node that is common to the third and fourth MR elements. The sensor generates signals based on the strength/direction of the magnetic field. The adjustable load is connected in parallel with one of the MR elements, and has a resistance that is controlled based on the signals generated by the sensor.

Abstract: A semiconductor device is provided with a substrate including a main surface and a back surface that face in opposite directions to each other in a thickness direction, and first, second and third direction sensor elements having different detection reference axes from each other. The substrate is formed with a recessed portion that is recessed from the main surface toward the back surface side. The first direction sensor element is disposed at least partially within the recessed portion. The second direction sensor element is disposed so as to overlap with the main surface as viewed in the thickness direction.

Abstract: A micromachined magnetic field sensor is disclosed. The micromachined magnetic field sensor includes a substrate; and a drive subsystem partially supported by the substrate with a plurality of beams, and at least one anchor; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field vector along a third axis. The micromachined magnetic field sensor also includes a position transducer to detect the motion of the drive subsystem and an electrostatic offset cancellation mechanism coupled to the drive subsystem.

Abstract: An integrated dual-axis anisotropic magnetoresistive sensor can include first and second sensor units. A resistor bridge of the first sensor unit can include a plurality of magnetoresistors, each having at least one strip of anisotropic magnetoresistive material with a longitudinal axis substantially parallel to the technological anisotropy axis of the material. A resistor bridge of the second sensor unit can include a plurality of magnetoresistors having a plurality of strips of the anisotropic magnetoresistive material, the plurality of strips including a first subset having longitudinal axes aligned at a first angle to the technological anisotropy axis and a second subset having longitudinal axes aligned at a second angle to the technological anisotropy axis. The second angle can have the same magnitude as the first, but be rotated in an opposite direction from the technological anisotropy axis.

Abstract: A magnetic sensor device is connectable to a data processing device and is a circuitry physically separate from the data processing device. In the magnetic sensor device, a detection unit detects magnetic field and outputs analog magnetic data representing the detected magnetic field. A conversion unit converts the analog magnetic data into digital magnetic data. A buffer memory has a capacity capable of storing a statistical population formed of a given number of the digital magnetic data. A control unit responds to a first trigger for operating the detection unit to successively output the analog magnetic data, then successively receives the digital magnetic data from the conversion unit in correspondence to the analog magnetic data, and accumulates the received digital magnetic data in the buffer memory to thereby form the statistical population.

Abstract: A first apparatus includes a vapor cell having first and second cavities fluidly connected by multiple channels. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity. A second apparatus includes a vapor cell having a first wafer with first and second cavities and a second wafer with one or more channels fluidly connecting the cavities. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity.

Abstract: A magnetic sensor includes a plurality of magnetoresistive elements that are formed by stacking a magnetic layer and a non-magnetic layer on a substrate and that exhibit a magnetoresistive effect and a soft magnetic member that converts a vertical magnetic field component into a horizontal magnetic field component. The soft magnetic member is formed of a plurality of first and second soft magnetic portions respectively extending in an X1-X2 direction and a Y1-Y2 direction, combined together in the shape of a lattice. The magnetoresistive elements have a sensitivity direction in the Y2 direction and include a magnetoresistive element located on a Y1 side portion side of the first soft magnetic portion and a magnetoresistive element located on a Y2 side portion side of the first soft magnetic portion, respectively receiving horizontal magnetic field components from the Y1 direction and Y2 direction.

Abstract: Embodiments relate to integrated sensors and sensing methods. Embodiments relate to integrated sensor layouts. Embodiments are configured to maximize a ratio of sensor spacing over a die area. While being generally applicable to many different types of sensors, particular advantages can be presented for magnetoresistive (xMR) sensors.

Abstract: Methods and apparatus for detecting a magnetic field include a semiconductor substrate, a coil configured to provide a changing magnetic field in response to a changing current in the coil; and a magnetic field sensing element supported by the substrate. The coil receives the changing current and, in response, generates a changing magnetic field. The magnetic field sensing element detects the presence of a magnetic target by detecting changes to the magnetic field caused by the target and comparing them to an expected value.

Abstract: A current sensor includes: four magnetic sensor elements arranged within a plane orthogonal to a measured current, having a symmetrical magnetic characteristics curve, and adapted to convert a magnitude of a magnetic field into an electrical signal and output the electrical signal; a bridge circuit including the four magnetic sensor elements; and a bias magnetic field application member adapted to applying a bias magnetic field to the magnetic sensor elements.

Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: A current sensor device includes a casing having a cavity and a conductor fixedly mounted to the casing. A semiconductor chip configured to sense a magnetic field is arranged in the cavity. An electrically insulating medium is configured to at least partially fill the cavity of the casing.

Abstract: A magnetic sensor includes a plurality of assemblies combined. Each assembly includes a plurality of tunnel magnetoresistive elements, a capacitor and a fixed resistor. The tunnel magnetoresistive dements are (i) disposed in such a way that fixed magnetization directions of fixed magnetic layers are substantially identical and changeable magnetization directions of free magnetic layers with no magnetic field applied are substantially identical and (ii) connected to each other in series-parallel. The capacitor is connected in parallel to the tunnel magnetoresistive elements. The fixed resistor is connected in series to the tunnel magnetoresistive elements and to the capacitor. The assemblies are (i) disposed in such a way that the fixed magnetization directions of the fixed magnetic layers of the assemblies have a relative angle of more than 90 degrees and (ii) connected to each other in series and/or in parallel.

Abstract: According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance.

Abstract: A sensor of magnetic fields along a direction of measurement comprising N magneto-resistive transducers TMi, a resistance of each transducer TMi varying linearly to within ±xi% as a function of an intensity of a magnetic field to be measured within a maximum range [ai; bi] of intensity of the magnetic field to be measured and non-linearly outside of this range, the index i being an identifier of the transducer TMi. The sensor further comprises a generator which generates N magnetic fields CMi using at least one permanent magnet, where each magnetic field CMi exhibits an intensity Ii in the direction of measurement. The intensity Ii being constant and independent of the intensity of the magnetic field to be measured and each transducer TMi being placed inside a respective magnetic field CMi.

Abstract: The subject matter of the invention is a detector system for detecting magnetic bodies in the human organism, which comprises at least two sensor assemblies, wherein each sensor assembly has one, two or three anisotropic magnetic resistance sensors, of which the axes of weak magnetisation point in different directions in pairs, and each sensor assembly has a spacing of 0.5 to 50 cm from the sensor assembly or the other sensor assemblies, and at least two sensor assemblies are tilted at an angle of 0 to 45° with respect to one another, and in addition a method for detecting the magnetic flux produced by a magnetic body in the human organism, and the use of the detector system according to the invention for detecting swallowed magnetic bodies and the disintegration of the same in the digestive system.

Abstract: A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil.

Abstract: In accordance with an embodiment, a circuit includes a magnetic transformer having a first winding coupled between a first signal node and a second signal node, and a second winding coupled between a first reference node and a current measurement node. A phase shift network is coupled between the second node and a voltage measurement node, and the circuit is configured to indicate an impedance matching condition based on an amplitude difference and a phase difference between the voltage measurement node and the current measurement node.

Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.

Abstract: The present invention relates to a magnetic sensor and a magnetic detecting method. A first arrangement pattern includes: a first magnetic detection unit (201) including a magnetic sensitivity material (201a) and a magnetic convergence material (201b) having a length different from a length of the magnetic sensitivity unit on a substrate, and being arranged to be parallel to the substrate and arranged horizontally so that a median line (Ma) passing through a midpoint of the magnetic sensitivity material in a longitudinal direction and a median line (Mb) of the magnetic convergence material in the longitudinal direction do not cross with each other; a second magnetic detection unit (202) having the structure same as the structure of the first magnetic detection unit; and a connecting unit electrically connecting the magnetic sensitivity material of the first magnetic detection unit in series with a magnetic sensitivity material of the second magnetic detection unit.

Abstract: Devices and methods for sensing current are described herein. One device (100) includes a base member (102) haying a first leg (104, 106) and a second leg (104, 106), the legs (104, 106) defining an angle (108) therebetween, a first magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a first location in a plane bisecting the angle (108), and a second magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a second location in the plane bisecting the angle (108).