Abstract: An apparatus and associated method are generally directed to a magnetic sensor. A sensor may have a stack with an air bearing surface (ABS) and a biasing surface opposite the ABS. A biasing yoke can be disposed between a biasing magnet and the stack with the biasing magnet having a lower magnet moment than the biasing yoke.

Abstract: A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.

Abstract: Improved current sensing methods and apparatus and conductor apparatus are presented for sensing current in a bus bar or other conductor using one or more circular magnetic sensors or multiple magnetic sensors disposed on a substrate in a pattern surrounding a longitudinal path within the outer periphery of the conductor to avoid or mitigate sensed magnetic field crosstalk and to facilitate use of high sensitivity magnetic sensors at locations inside the conductor periphery in which the magnetic field is relatively small.

Abstract: An apparatus includes a sensor arrangement with a sensor chip. A magnetic field generator is configured to generate a secondary magnetic field opposing an external primary magnetic field at the sensor chip. The magnetic field generator protects the sensor arrangement against the external primary magnetic field.

Abstract: A three-dimensional magnetic field sensor includes a substrate having an element placement surface that is planar, and first, second and third MR elements disposed on a side of the element placement surface of the substrate and integrated with the substrate. Each of the first, second and third MR elements includes a magnetization pinned layer, a nonmagnetic layer, and a free layer. The magnetization pinned layer of the first MR element has a magnetization direction that is pinned in an X direction parallel to the element placement surface. The magnetization pinned layer of the second MR element has a magnetization direction that is pinned in a Y direction parallel to the element placement surface and different from the X direction. The magnetization pinned layer of the third MR element has a magnetization direction that is pinned in a Z direction perpendicular to the element placement surface.

Abstract: A circuit and method for detecting a brown-out condition and providing a feed-forward transfer function in a power supply circuit. A comparison circuit is coupled to a delay element through a latch. A second delay element is connected between the first delay element and an input of the latch. The output of the first delay element is connected to a clamping circuit via a logic circuit. A first voltage is compared with a reference voltage to generate a comparison voltage, which is transmitted through the latch and the first delay element. The comparison voltage is monitored at an output of the first delay element. A brown-out condition occurs if the comparison voltage being monitored at the output of the first delay element results from the first voltage being less than the reference voltage.

Abstract: A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections.

Abstract: An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.

Abstract: When a switch is set to off, and a switch is set to on, the voltage of a SigOut terminal is stabilized with a reference voltage, and a bias voltage is applied to a capacitor. Changing the switch from on to off, with the bias voltage retained in the capacitor, a detection signal which is input via a SigIn terminal is amplified with the reference voltage as a reference, and an amplified signal is output from the SigOut terminal.

Abstract: To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns.

Abstract: A sensor is described for detecting the presence of a magnetic nanoparticle (N). The sensor is arranged on a support (1), on which a plurality of non-magnetic contacts (Iin, GND, V1, V2) electrically conductively connected to the sensor is disposed. The contacts are adapted to be connected to means for measuring magnetoresistance. The sensor includes a planar ferromagnetic nanostructure (3), comprising a detection area (31) shaped as a strip bent to form a corner. The detection area is adapted to selectively assume, as a response to an applied magnetic field, a first spin configuration comprising a transverse “head-to-head” domain wall (TW), and a second spin configuration, wherein such domain wall (TW) is absent. The transition from the first configuration to the second configuration is affected by the proximity of a magnetic nanoparticle (N) to the detection area.

Abstract: An embodiment of a magnetic-field sensor includes a magnetic-field sensor arrangement and a magnetic body which has, for example, a non-convex cross-sectional area with regard to a cross-sectional plane running through the magnetic body, the magnetic body having an inhomogeneous magnetization.

Abstract: A method and apparatus configured to detect electromagnetic field events are disclosed. One apparatus includes an antenna and a circuit electrically connected to the antenna. The circuit includes electronics communicatively connected to the antenna via a direct current isolation circuit and an equalizer compensating for the differentiating frequency response of the antenna. The circuit also includes a logarithmic amplifier electrically connected to the equalizer and configured to generate a range of signals based on signals received at the antenna. The circuit further includes a peak detector receiving signals from the equalizer and configured to capture a peak value of the signals. The electromagnetic field event is detected at least in part based on the peak signal value.

Abstract: To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal.

Abstract: A magnetic-field sensor and a method of calibrating a magnetic-field sensor are disclosed. In one embodiment the method includes supplying the measurement arrangements with an excitation signal to generate a tappable measuring signal at each measurement tap of the measurement arrangements, detecting the measuring signals, evaluating the detected measuring signals by comparing the detected measuring signals with a comparison value, determining the measurement arrangement with a smallest difference, in terms of magnitude, between the detected measuring signals and the comparison value, and choosing the measurement arrangement with the smallest difference for a measurement operation of the magnetic-field sensor. The magnetic-field sensor includes a plurality of magnetoresistive sensor elements connected to form measurement arrangements each measurement arrangement including a measurement tap, wherein the magnetoresistive sensor elements are laterally distributed on a chip of the magnetic field sensor.

Abstract: A magnetic sensor for sensing an external magnetic field includes first and second electrodes and first and second magnetic tunneling junctions. The first and second electrodes are disposed over a substrate; and the first and second magnetic tunneling junctions are conductively disposed between the first and second electrodes and connected in parallel between the first and second electrodes. The first and second magnetic tunneling junctions are arranged along a first easy axis of the magnetic sensor. The first magnetic tunneling junction includes a first pinned magnetization and a first free magnetization, and the second magnetic tunneling junction includes a second pinned magnetization and a second free magnetization. The first free magnetization and the second free magnetization are arranged substantially in parallel to the first easy axis and in substantially opposite directions.

Abstract: A multiferroic antenna and sensor where the sensor includes a multiferroic stack of multiple connected multiferroic layer-pairs, each multiferroic layer-pair comprising an alternating layer of a magnetostrictive material and a piezoelectric material bonded together enabling a high signal sensitivity, a magnetic field of an incident signal causing mechanical strain in the magnetostrictive material layers that strains adjacent piezoelectric material layers producing an electrical voltage in each multiferroic layer-pair proportional to the incident signal. An output of the multiferroic stack comprises the electrical voltage amplified proportional to a total number of multiple connected multiferroic layer-pairs in the multiferroic stack.

Abstract: A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point.

Abstract: A magnetic balance type current sensor includes a magnetoresistance effect element whose resistance value changes owing to the application of an induction magnetic field from a current to be measured; a feedback coil disposed in the vicinity of the magnetoresistance effect element and generating a cancelling magnetic field cancelling out the induction magnetic field; a magnetic field detection bridge circuit including two outputs causing a voltage difference corresponding to the induction magnetic field to occur; and a magnetic shield attenuating the induction magnetic field and enhancing the cancelling magnetic field, wherein, on the basis of the current flowing through the feedback coil at the time of an equilibrium state in which the induction magnetic field and the cancelling magnetic field are cancelled out, the current to be measured is measured, wherein the feedback coil, the magnetic shield, and the magnetic field detection bridge circuit are formed on a same substrate.

Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.

Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: The present invention is directed to a magnetic sensor using a spin transfer torque device, including a spin transfer torque device configured such that the magnetization direction thereof is varied by current, a bipolar pulse source configured to apply bipolar pulses to the spin transfer torque device in order to control the coercive field and sensitivity of the spin transfer torque device, and a signal processing unit configured to calculate magnetic susceptibility or magnetic resistance by counting the parallel (P) or anti-parallel (AP) states of the spin transfer torque device in response to the applied bipolar pulses.

Abstract: Apparatuses for detecting the strength of magnetic fields may include a first magnetic field detection circuit that produces a first signal indicating a strength of a magnetic field, and a second magnetic field detection circuit that can be turned on and off, and produces a second signal indicating the strength of the magnetic field. A control circuit may be configured to determine whether the first signal indicates a change greater than a predetermined amount in the strength of the magnetic field. If the change is greater than the predetermined amount, the control circuit may turn on the second magnetic field detection circuit. The control circuit may turn off the second magnetic field detection circuit to conserve power if the strength of the magnetic field is relatively stable. Methods for detecting the strength of the magnetic field are also disclosed.

Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract: An illustrative packaged magnetic field sensor includes a power input terminal and a sensor output terminal, both accessible from outside of the package housing. A sensing block is situated in the package housing and electrically coupled to the magnetic field sensing device and the sensor output terminal. An adjustment block is situated in the package housing and coupled to the power input terminal and the sensing block. In some cases, the adjustment block may receive one or more messages that include sensor adjustment information. The one or more messages may be modulated onto the power input signal. The adjustment block may decode the received sensor adjustment information from the messages, and store the decoded adjustment information into a memory. The adjustment block may then adjust the output signal of the sensing block based on the decoded adjustment information.

Abstract: There has been a problem that a bridge circuit using magneto-resistive elements or transducer elements could output a signal including an offset voltage, which could result in lower measurement accuracy. In order to solve such a problem, half-bridges each having magneto-resistive elements or transducer elements are excited with different excitation voltages so that the offset voltage is eliminated and the measurement accuracy is improved.

Abstract: Magnetic position sensors, systems and methods are disclosed. In an embodiment, a position sensing system includes a magnetic field source with a dipole moment in a direction along a z-axis; and a sensor module spaced apart from a center of the dipole moment a distance y0 along a y-axis and spaced apart a distance z0 from a center of the dipole moment along a z-axis, at least one of the magnetic field source or the sensor module configured to move relative to the other along a path in the y=y0 plane, the sensor module configured to determine a relative position of the magnetic field source to the sensor module with respect to the path from a ratio of a gradient dBz/dx to a gradient dBz/dy, where Bz is a magnetic field component associated with the permanent magnet, and where an x-axis, the y-axis and the z-axis are at right angles.

Abstract: In order to provide a magnetic impedance element capable of achieving a large magnetic impedance effect at room temperature or higher, the magnetic impedance element includes a ceramic body represented by the chemical formula Sr2-xBaxFeyMozO6 (0.8?x?2.0, y+z=2), and at least two electrode terminals are provided on the ceramic body.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.

Abstract: A current sensor for measuring a current flowing through a conductor includes a sensor substrate, a magnetoelectric converter formed on a surface of the sensor substrate and configured to output a signal changing with an applied magnetic field, and a magnetic shield that surrounds the sensor substrate and the conductor to magnetically shield the inside from the outside. The output signal of the magnetoelectric converter changes with a magnetic filed applied along the formation surface of the sensor substrate. The magnetic shield has at least one gap for reducing magnetic saturation in the magnetic shield. The gap and the sensor substrate are located at the same height in a z-direction orthogonal to the formation surface of the sensor substrate.

Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.

Abstract: An integrated circuit includes a semiconductor die including a first magnetic field sensor. The integrated circuit includes an isolation material layer over the first magnetic field sensor and a sintered metal layer over the isolation material layer. The first magnetic field sensor is configured to sense a magnetic field generated by a current passing through the sintered metal layer.

Abstract: A system according to one embodiment includes a power supply for charging a lead of a magnetic sensor to a voltage; an interface for operatively coupling the power supply to the lead of the magnetic sensor; a relay for selectively coupling the lead of the magnetic sensor to ground for causing a discharge event, wherein the discharge event reverses a magnetic orientation of a pinned layer of the magnetic sensor; and a shorting resistor between the relay and ground.

Abstract: Circuit and method for biasing a plate-shaped sensor element (2) made of doped semiconductor material and having a first resp. second excitation contact (C, A) connected to a first resp. second excitation node (Cn, An), and a first resp. second sense contact (B, D) connected to a first resp. second sense node (Bn, Dn). The plate-shaped sensor element is electrically isolated from a substrate or well (5) by means of a first PN-junction.

Abstract: A magnetostrictive stress sensor (11, 12, 13, 14, 15, 16) includes: a magnetic member {20, (107, 108, 109, 110, 111, 112)} having a magnetostriction; a permanent magnet (30, 35, 113) adjacent to the magnetic member; a magnetic sensor (40, 104A, 104B) for detecting a leak magnetic flux on a side opposite to the permanent magnet with respect to the magnetic member, wherein the leak magnetic flux changes according to a stress acting on the magnetic member and the magnetic sensor detects the change of the leak magnetic flux, to thereby detect the stress acting on the magnetic member, and a direction (21, 108A, 109A) of the stress acting on the magnetic member is substantially orthogonal to a magnetizing direction (31, 31, 113A) of the permanent magnet.

Abstract: A position sensor arrangement that can determine the two-dimensional position of a variety of different movable devices, such as an electronic joystick. According to one embodiment, the position sensor arrangement includes two pair of magnetic sensing elements that are angularly offset or skewed with respect to one another in order to provide redundancy and accuracy with a minimum number of sensing elements.

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Abstract: In a current detection device for detecting current in a busbar, a reduction in device size may be realized by employing a small magnetic core. The prevention or reduction of excessive heat generation by the busbar, the facilitation of the attachment task, and a reduction in the amount of space required for the attachment task may also be realized. The folded-back busbar is U-shaped with a bar-shaped penetration portion that passes through a hole portion of a magnetic core, two bar-shaped extension portions, and two flat plate-shaped penetration portions. The width of each terminal portion is larger than the widths of the penetration portion and the extension portions. An insulating casing supports the magnetic core, a Hall element, and the folded-back busbar in a fixed positional relationship, with the two terminal portions being exposed to the outside.

Abstract: A giant magneto-impedance (GMI) magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the GMI magnetometer. The semiconductor wafer fabrication sequence forms a magnetic conductor, a non-magnetic conductor that is wrapped around the magnetic conductor as a coil, and non-magnetic conductors that touch the opposite ends of the magnetic conductor.

Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Abstract: An arrangement for potential-free measurement of current flowing in two primary conductors arranged in parallel in opposite directions of each other. The magnetic differential field is detected by a differential field sensor. The primary conductors and the differential field sensor are disposed between two metal shield plates made of a highly permeable material. Each shield plate has a web and the webs extend on both sides of the arrangement of the primary conductors in parallel to the arrangement. At least one shield plate has a U-shape in cross-sectional planes having one pair of limbs that extend at a right angle in a longitudinal direction to the U-shaped cross-sectional planes. At least one limb of one shield plate is aligned toward the other shield plates on one of the limbs while leaving an air gap.

Abstract: A magnetoresistive angular sensing method is disclosed. In a first mode, a first dc external magnetic field in a predetermined direction is applied to an angular sensor arrangement in which the external magnetic field dominates over a magnetic field generated by an input device an angular position of which is to be sensed. In a second mode, a second external magnetic field is applied to the angular sensor. Outputs of the angular sensor arrangement in the two modes are processed to determine an angular orientation of the input device with offset voltage compensation.

Abstract: A magnetic sensor includes a plurality of assemblies combined. Each assembly includes a plurality of tunnel magnetoresistive elements, a capacitor and a fixed resistor. The tunnel magnetoresistive elements are (i) disposed in such a way that fixed magnetization directions of fixed magnetic layers are substantially identical and changeable magnetization directions of free magnetic layers with no magnetic field applied are substantially identical and (ii) connected to each other in series-parallel. The capacitor is connected in parallel to the tunnel magnetoresistive elements. The fixed resistor is connected in series to the tunnel magnetoresistive elements and to the capacitor. The assemblies are (i) disposed in such a way that the fixed magnetization directions of the fixed magnetic layers of the assemblies have a relative angle of more than 90 degrees and (ii) connected to each other in series and/or in parallel.

Abstract: A three-dimensional (3D) in-plane magnetic sensor includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit. The first magnetic sensor, second magnetic sensor and third magnetic sensor are installed on a same plane to measure the magnetic field component of first direction, second direction and third direction, where the third direction is perpendicular to the first and second direction. The third magnetic sensor includes a third fixed layer, a third magnetic insulating layer and a third free layer. The magnetoresistance of the third free layer is an intermediate value in the spontaneous magnetization direction, and is varied when interfered by an external magnetic field. In short, the 3D in-plane magnetic sensor is manufactured with semiconductor processing which does not require vertical adhesion, and also bring the benefits of improved production capacity, prolonged product life, reduced manufacturing cost and time.

Abstract: A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load.

Abstract: An angle measuring system includes a first component group and a second component group, the first component group being mounted in a manner allowing rotation about an axis relative to the second component group. The first component group includes a ring having a running surface and an angle scaling. The second component group has a further ring having a further running surface, as well as a sensor for scanning the angle scaling. Rolling elements are arranged between the running surfaces, the angle scaling being applied such that a geometric pattern of the angle scaling in a first region differs from a geometric pattern of the angle scaling in a second region as a function of radial runouts of the running surfaces and/or of the rolling elements.

Abstract: A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.

Abstract: A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

Abstract: A field generation unit generates a rotating magnetic field including a first partial magnetic field in a first position and a second partial magnetic field in a second position. The first and second partial magnetic fields differ in direction by 180° and rotate in the same direction of rotation. A first detection unit detects, in the first position, a first angle that the direction of a first applied field forms with respect to a first direction. The first applied field includes the first partial magnetic field as its main component. A second detection unit detects, in the second position, a second angle that the direction of a second applied field forms with respect to a second direction. The second applied field includes the second partial magnetic field as its main component. A detected value of the angle that the direction of the rotating magnetic field in a reference position forms with respect to a reference direction is calculated based on detected values of the first and second angles.

Abstract: The present invention provides various thin-film sensor type power measuring apparatuses which can be constructed in a simplified and compact structure so as to measure the power of high-frequency circuits or batteries. This power measuring apparatus includes: a magnetic film disposed in parallel to a primary conductor through which a load current flows; a power supply with input and output terminals for supplying an element current to the magnetic film; a bias magnetic field applying unit for applying a DC magnetic field in a direction that is parallel, perpendicular, or diagonal to the direction of magnetization of the magnetic film; and a detection unit for detecting the voltage between the ends of the magnetic film in the direction of the element current. The power measuring apparatus detects only the DC voltage component between the ends of the magnetic film in the direction of the element current.