Abstract: In a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged, a voltage is applied to a sample such that a charged particle beam does not reach the sample (referred to as “mirror state”) when the charged particle beam is applied toward the sample. Information is detected, relating to a potential on the sample using signals obtained by the voltage application.

Abstract: A solar photovoltaic panel is disclosed that includes a photovoltaic cell, a local management unit connected between the cell and a string bus, and a bypass device connected to the cell that is operable to bypass the local management unit when conducting a flash test. The panel preferably further includes a transient detector connected to the cell that is operable to sense an output from the cell having a predetermined transient rise time. The transient detector and the bypass device may be contained within a junction box integrated into the panel and may include the local management unit within the junction box. The transient detector may include a switch connected to a circuit that electrically bypasses the local management unit when the switch is turned on as a result of an output transient rise time less than the predetermined time, thus facilitating a flash test of the photovoltaic panel.

Abstract: A semiconductor wafer resting on a contact element has a spatially distributed force applied to its frontside and an equal and opposing force applied to its backside. The contact element comprises a solid immersion lens (SIL), and has an area less than the area of the wafer, but no less than the larger of the area of an optical collection area and an electrical probe assembly. The equal and opposing forces cause the wafer to conform to the shape of the contact element. Measurements, including electrical testing, optical probing and wafer characterization are performed on the wafer.

Abstract: The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%).

Abstract: A method for locating a fault of a submarine cable, a device, and a communication system are provided. A light pulse output by a Repeater (RPT) is incident to a location of a fault as a probe light pulse. The RPT obtains a time difference between the probe light pulse and the reflected probe light pulse, and sends the time difference to a terrestrial Submarine Line Terminal Equipment (SLTE) so that the SLTE may easily locate the fault according to principles of an Optical Time Domain Reflector (OTDR). Compared with the prior art, the method may locate the fault of the submarine cable more quickly and accurately, so that maintainers may maintain the submarine cable in time.

Abstract: A method includes providing a plurality of failure dies, and performing a chip probing on the plurality of failure dies to generate a data log comprising electrical characteristics of the plurality of failure dies. An automatic net tracing is performed to trace failure candidate nodes in the failure dies. A failure layer analysis is performed on results obtained from the automatic net tracing. Physical failure analysis (PFA) samples are selected from the plurality of failure dies using results obtained in the step of performing the failure layer analysis.

Abstract: An example arc fault detection system includes an electrical system, an electrical controller, a sensor, and a master controller. The electrical controller detects a voltage of the electrical system, a current of the electrical system, or both. The sensor detects an ultraviolet light level of the electrical system. The master controller is configured to communicate with the electrical controller and the sensor. The master controller isolates the electrical system in response to receiving a signal from the electrical controller and the sensor. An example method of isolating an arc fault in an electrical system includes detecting a voltage level, a current level, and an ultraviolet light level of the electrical system. The method isolates an arc fault based on the voltage level or the current level, and the ultraviolet light level from the detecting.

Abstract: The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements.

Abstract: A photodetector array (142) includes a plurality of photodetector cells (202) such as avalanche photodiodes (208) and readout circuits (210). An array self-tester (226) tests a dark count or other performance characteristic of the cells (202). The test is performed in connection with the manufacture of the array (142) or following the installation of the array (142) in a detection system (100).

Abstract: A solar photovoltaic panel test platform includes a test section and a signal processing section. The test section has a frame, a light-emitting unit disposed on the frame, a first angle adjustment unit and a second angle adjustment unit arranged on the frame, an air-cooling unit mounted on the first angle adjustment unit for connecting with a first solar photovoltaic panel, and a water-cooling unit mounted on the second angle adjustment unit for connecting with a second solar photovoltaic panel. The signal processing section is connected to the first and second angle adjustment units, the light-emitting unit, the air-cooling unit, the water-cooling unit, and the first and second solar photovoltaic panels. The signal processing section serves to receive sensing signals and transmit control signals. The solar photovoltaic panel test platform can provide different illuminations, angles of incidence and heat dissipation modes to test the efficiency of the solar photovoltaic panels.

Abstract: A photodetector array includes a plurality of photodetector cells such as avalanche photodiodes and readout circuits. An array self-tester tests a dark count or other performance characteristic of the cells. The test is performed in connection with the manufacture of the array or following the installation of the array in a detection system.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: A test system includes a computer and an interface device for accessing a scan chain on an application specific integrated circuit (ASIC) under test. The computer includes a memory that contains application software that when executed by the computer quantifies soft errors and soft error rates (SER) in storage elements on the ASIC. The interface device receives commands and data from the computer, translates the commands and data from a first protocol to a second protocol and communicates the commands and data in the second protocol to the ASIC. A method for measuring SER in the ASIC includes baseline, comparison, and latch up accesses of data in a scan chain in the ASIC. Between accesses, the ASIC is exposed to a neutron flux that accelerates the occurrence of soft errors due to ionizing radiation upon the ASIC.

Abstract: Embodiments of the present invention relate to a solar simulator module of a solar cell production line. In one embodiment the solar simulator receives a solar cell module in a horizontal position and reorients the module into a vertical position. A light source is oriented to emit a flash of light in a substantially horizontal orientation toward the vertically oriented solar cell module. In one embodiment, an automated labeling device affixes a label including the electrical characteristics measured onto a back surface of the solar cell module. In one embodiment, a plurality of solar cell modules are received and tested simultaneously.

Abstract: A Two-Photon Laser Assisted Device Alteration technique is presented. Fault localization is investigated by exploiting the non-linear two-photon absorption mechanism to induce LADA effects. Femtosecond laser pulses of wavelength having photon energy lower than the silicon bandgap are directed at the area of interest, while the DUT is stimulated with test vectors. The laser pulses are synchronized to the DUT stimulation, so that switching timing can be altered using the two-photon absorption effect.

Abstract: A target position detection apparatus for a robot includes: a robot including an arm configured to be freely moved in at least two directions of X and Y axes, the arm having a wrist axis provided at a distal end of the arm and configured to be freely moved in a horizontal direction, and the wrist axis being provided with an end effector; and a control unit adapted for driving a memory to store a teaching point therein and controlling an operation of the robot such that the end effector will be moved toward the teaching point stored in the memory.

Abstract: A method of processing of solar cells includes determining that a back-contact solar cell is defective. The back-contact solar cell includes a first plurality of interconnect pads at a first edge thereof, and a second plurality of interconnect pads at a second, opposed thereof, the first and second pluralities of interconnect pads having opposite operational charges. The back-contact solar cell is then diced to define at least first and second back-contact solar cell sections. The first back-contact solar cell section has at least two interconnect pads, of the plurality of interconnect pads, at respective opposed edges thereof.

Abstract: An embodiment of the invention provides an apparatus for measuring a conductive pattern on a substrate, which includes: a first electro-optical modulator surrounding at least one first detecting roller; transmission rollers for transferring the substrate and allowing direct contact of the substrate and the first electro-optical modulator; a voltage supplier for providing a bias between the first electro-optical modulator and the substrate; and a first image detecting system for receiving a first detecting light reflected from a first surface of the substrate.

Abstract: A sunlight simulator and solar cell measuring device consisting of detecting device is disclosed, in which the housing is a closed space consisting of an opening gate, the closed space is internally installed with a light source which is used to emit a light toward the opening gate, and a splitting unit is installed on the travelling path of the light for dividing the light into a first light-beam and a second light-beam, herein the first light-beam is projected onto the solar cell under measurement located at the opening gate as a solar cell measuring device; in addition, a detecting device is installed on the travelling path of the second light-beam for receiving the second light-beam, and then a signal can be outputted by the detecting device in order to monitor the irradiation variation of the light emitted by the light source, thus ensuring the precision of the solar cell measurement.

Abstract: An apparatus for a user to conduct an accelerated soft error test (ASER) on a semiconductor sample is provided. The apparatus comprises a first component for holding the radiation source, where the radiation source may be either an alpha-particle or neutron-particle source. The apparatus comprises a second component for holding the semiconductor sample, where the semiconductor sample may be either a silicon wafer or semiconductor chip. The apparatus comprises a connecting assembly for placing the first component and the second component relative to each other at a plurality of positions that subject the semiconductor sample to a radiation stress from the radiation source at a plurality of stress efficiencies. Among the benefits provided are improved repeatability and credibility of ASER tests and reduced radiation exposures to operators of ASER tests.

Abstract: A reflector tool and a method are provided for three-dimensional integrated circuit (IC) failure analysis. An IC (die) has top and bottom surfaces, a perimeter, and a first side. The IC is electrically connected to a current sensing amplifier. The first side of the IC is scanned in the X plane with an infrared laser beam while changes in IC current flow are sensed. The sensed current changes are cross-referenced to the location of the infrared laser beam in the X plane. In one aspect, a plurality of scans are performed on the first side in the X plane, with at a corresponding plurality of steps in the Y plane, so that current changes can be cross-referenced to locations in the X and Y planes. Using this 2-D analysis through the IC side, a human operator or software program can determine defects in the IC.

Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.

Abstract: Methods and apparatus are disclosed to simultaneously, wirelessly test semiconductor components formed on a semiconductor wafer. The semiconductor components transmit respective outcomes of a self-contained testing operation to wireless automatic test equipment via a common communication channel. Multiple receiving antennas observe the outcomes from multiple directions in three dimensional space. The wireless automatic test equipment determines whether one or more of the semiconductor components operate as expected and, optionally, may use properties of the three dimensional space to determine a location of one or more of the semiconductor components. The wireless testing equipment may additionally determine performance of the semiconductor components by detecting infrared energy emitted, transmitted, and/or reflected by the semiconductor wafer before, during, and/or after a self-contained testing operation.

Abstract: A photovoltaic strip is physically separated from a semiconductor wafer utilizing physical sawing or other techniques. In accordance with one embodiment, a type of semiconductor wafer is first determined by interrogating the wafer to identify one or more of its optical, thermal, or electrical characteristics. This information regarding substrate type is then communicated to a separation apparatus, which then accomplishes precise physical separation of the substrate into discrete strips. Electrical performance of the strips may be tested prior to their incorporation into an assembled solar cell, where they are coupled to a concentrating element utilizing an elastomer encapsulant.

Abstract: Embodiments of the present invention are directed to a method and fault detection system for detecting and identifying the location of faults in underground power lines that can effectively and quickly identify faults in underground power lines. Embodiments can provide a method and fault detection system that quickly identify faults in a power grid that result from open circuits or short circuits in underground conduits. A specific system for fault detection of power lines in a network having one or more substations and corresponding one or more manholes for access to underground lines, includes: a sensor device for each manhole, wherein the sensor device is capable of detecting a magnetic field generated by a power line and can send a signal through a fiber optic cable, the signal including a unique wavelength identifier; and a communication device for each substation for transmitting the signal from the sensor device to an operator.

Abstract: An apparatus for measuring a lifetime of charge carriers that has a measuring probe and a component for directing ultraviolet radiation to a measuring position. The measuring probe also includes at least one electrode provided at a predetermined spatial relationship to the measuring position. A microwave source is adapted to direct microwave radiation to the measuring position, a microwave detector is adapted to measure an alteration of an intensity of microwave radiation reflected at the measuring position in response to the ultraviolet radiation and a semiconductor structure holder is adapted to receive a semiconductor structure and to provide an electric contact to a portion of the semiconductor structure. Additionally, a device for moving the substrate holder relative to the measuring probe is provided for positioning at least one portion of the semiconductor structure at the measuring position.

Abstract: In an embodiment, a chuck to support a solar cell in hot spot testing is provided. This embodiment of the chuck comprises a base portion and a support portion disposed above the base portion. The support portion is configured to support the solar cell above the base portion and to define a space between a bottom surface of the solar cell and the base portion that thermally separates a portion of the bottom surface of the solar cell from the base portion.

Abstract: The present invention provides an inspection apparatus for a photovoltaic devices which electrifies the photovoltaic devices in a forward direction thereof to make the photovoltaic devices emit electro-luminescence light and which has a simple-structured and cheap darkroom. Also the present invention provides a transport apparatus, which transports the stacked constituent members of the photovoltaic devices in the pre-laminated state to the inspection apparatus without the positional deviation among the constituent members of the photovoltaic devices.

Abstract: The present invention relates to a system and method for localizing defects causing leakage currents in a photovoltaic element (100), a system and method for passivating defects causing leakage currents in a photovoltaic element and a system and method for passivating a shunt in a roll-to-roll photovoltaic element comprising the steps of illuminating an area (130), having at least a minimum size, of the photovoltaic element; measuring at least one electrical value of an electrical potential between electrodes of the photovoltaic element at least one specific measurement position within the illuminated area on one of the electrodes of the photovoltaic element; and determining a position of a defect based on the measured at least one photomduced electrical value and the at least one specific measurement position.

Abstract: The present invention is to provide a power supply control apparatus which can connect a ground to a suitable electric potential when the ground is disconnected. The power supply control apparatus includes a control circuit having a switch element and a switch control unit, and a load. One terminal of load is connected to a direct-current power supply through the switch element, and the other terminal is connected to a ground electric potential. The switch control unit has a ground terminal connected to the ground electric potential and outputting a ground current flowing toward the ground electric potential. The control circuit includes a bypass device having a load side bypass system for passing the ground current to the ground electric potential through the load when connection between the ground terminal and the ground electric potential is disconnected.

Abstract: Disclosed herein is an apparatus and method for inspecting defects in a circuit pattern. In the inspection apparatus and method, a laser beam is radiated by a laser unit onto a first end of a circuit pattern, and variation in impedance of a capacitor sensor disposed at a second end of the circuit pattern is measured, thus measuring the open/short circuits of the circuit pattern. Accordingly, the inspection apparatus and method are advantageous in that defects in the circuit pattern can be measured in a non-contact manner, so that the consumption of pin probes can be reduced, and the reliability of the measurement of defects in the circuit pattern can be improved.

Abstract: Systems, methods, and apparatuses may be provided for stray voltage detection. The systems, methods and apparatuses may include providing a first antenna at a first location relative to a monitored equipment or structure, where the first antenna may be operative to detect a first electric field strength at the first location, providing a second antenna at a second location relative to the monitored equipment or structure, where the second antenna may be operative to detect a second electric field strength at the second location, and detecting a stray voltage based at least in part upon the detected first electric field strength and the second electric field strength.

Abstract: A method involves identifying a leak location in a cable television system using a detection system, calculating a distance between the leak location and a plurality of shapes or points contained in map data to identify the nearest shape or point, and providing a piece of information corresponding to the nearest shape or point. The piece of information may be a street address or a device.

Abstract: Methods and apparatus for producing sub-diffraction limited images utilizing an exponential scaling effect. An exemplary system provides an optical source that focuses an optical beam onto a target. The focused optical beam has sufficient optical intensity to induce an exponential signal response within the target. A detection device detects the exponential signal response. A scanning device scans the focused optical source and another device records the detection of the exponential signal response for purposes of producing a sub-diffraction limited image. The system further includes a display device that displays at least a portion of the recorded detection.

Abstract: A semiconductor device failure analysis method and apparatus and a computer program for the method and apparatus are provided. The method includes: an observation image acquisition process of acquiring a voltage contrast image by charging an exposed conductive layer of a semiconductor device and irradiating the exposed conductive layer with charged particles; a wiring search process of searching for end points connected to the conductive layer based on design data; and a determination process of comparing voltage contrasts of three levels or more set in advance, one of which is set for a wiring depending on a state of an end point of the wiring, with the voltage contrast image acquired in the observation image acquisition process to determine consistency/inconsistency. Since three or more levels are set, for example, a short-circuit formed by a conductive layer connected to a transistor diffusion layer and another wiring can be identified.

Abstract: A semiconductor device analyzer comprises a function of radiating a charged particle beam on a sample and displaying a detected secondary electron image according to detected secondary electron intensity. A charged particle beam is radiated according to a first radiation pattern onto a semiconductor device that is to be analyzed, and a charge is injected. Next, a charge accumulation state of the semiconductor device that is to be analyzed is observed. A location where the charge accumulation state is abnormal can be detected as a defect location in the semiconductor device. A defect location is identified easily.

Abstract: A test structure and method thereof for determining a defect in a sample of semiconductor device includes at least one transistor rendered grounded. The grounded transistor is preferably located at least one end of a test pattern designed to be included in the sample. When the test structure is inspected by charged particle beam inspection, the voltage contrast (VC) of the transistors in the test pattern including the grounded transistor is observed for determination of the presence of defect in the sample.

Abstract: Some embodiments of the present invention provide a system that characterizes a computer system parameter by analyzing a target electromagnetic signal radiating from the computer system. First, the target electromagnetic signal is monitored using a first antenna and a second antenna, wherein an axis of the second antenna is oriented non-parallel to an axis of the first antenna. Then, the target electromagnetic signal received from the first antenna and the target electromagnetic signal received from the second antenna are separately analyzed to characterize the computer system parameter.

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained.

Abstract: A system and method are provided for testing an integrated circuit (IC) using thermally induced noise analysis. The method provides an IC die and supplies electrical power to the IC die. The IC die surface is scanned with a laser, and the laser beam irradiated locations on the IC die surface are tracked. The laser scanning heats active electrical elements underlying the scanned IC die surface. A frequency response of an IC die electrical interface is measured and correlated to irradiated locations. IC die defect regions are determined in response to identifying location-correlated frequency measurements exceeding a noise threshold. For example, a frequency measurement may be correlated to a die surface location, and if frequency measurement exceeds the noise threshold, then circuitry underlying that surface area may be identified as defective. Typically, die defect regions are associated with measurements in the frequency range between about 1 Hertz and 10 kilohertz.

Abstract: In accordance with at least one embodiment of the present invention, a portable inspection system is disclosed to capture inspection data, such as for example an infrared image, sound information, and/or electrical measurement information. The inspection data may be securely recorded (e.g., with an encryption algorithm) along with associated information, which may include for example date, time, system settings, operator identification, and location.

Abstract: A method for evaluating performance of a solar cell, comprising: a current passing step (S1) of passing, in a forward direction, a direct current with respect to a solar cell element constituting the solar cell; a temperature control step (S2) of heating the solar cell element and controlling a heating temperature of the solar cell element; and a light emission detecting step (S3) of detecting light emission characteristics of light generated from the solar cell element due to the passing of the direct current in the current passing step and the heating of the solar cell element in the temperature control step (S2).

Abstract: A test circuit for testing not only characteristics of a current-voltage conversion circuit in which a light-receiving element is used but also characteristics of the light-receiving element includes: a current-mirror circuit 110 including a bipolar transistor Q1 and a bipolar transistor Q2 which are electrically connected to a light-receiving element PD1; a dummy light-receiving element PD_D which is an element identical to the light-receiving element PD1 and is equivalent in characteristics to the light-receiving element PD1; and a test terminal TP which is electrically connected to the bipolar transistor Q1 and the dummy light-receiving element PD_D.

Abstract: Failure analysis method includes performing fixed radiation of semiconductor chip (wafer) by photocurrent generation laser beam, scanning and radiating a region to be observed on semiconductor chip by heating laser beam, detecting, by a SQUID fluxmeter, current change generated in the semiconductor chip by radiating the photocurrent generation laser beam and the heating laser beam, and analyzing failure of the semiconductor chip based on current change detected by the SQUID fluxmeter. Radiation of photocurrent generation laser beam and heating laser beam are performed from a back surface side of the LSI chip, and detection by the SQUID fluxmeter is performed on a front surface side of the LSI chip. In analysis of failure of the LSI chip, image processing is performed in which a signal outputted from the SQUID fluxmeter is made to correspond to a scanning point. Visualization of defects is possible.

Abstract: A system and method for detecting a defect in a solar cell and repairing and characterizing a solar cell includes applying a test signal to the solar cell, monitoring the response of solar cell, detecting a defect associated with its location during the monitoring step, removing or isolating the defect from a solar cell and characterizing solar cell performance. The defect may be a short between the emitter and the base of solar cell. The system and method also detect a precise location of the defect based on the use of light valve panel (LVP), which can control the input beam to or output beam from the solar cell in terms of size, position, gray level, and wavelength of the transmitted light. The LVP may be realized in any one of a variety of ways. For example, the active matrix liquid crystal display (AMLCD) such as Thin Film Transistor driven LCD (TFT-LCD) may be used as the LVP.

Abstract: The present invention includes an antenna for measuring an electromagnetic wave radiated from a device to be measured stemming from partial discharge and having sensitivity at least in the UHF band; a filter for extracting a TEM mode component from a measured time waveform; and a measurement device body including a processing section adapted to obtain a second order integral value of the time waveform having undergone the filter processing and obtain a discharge charge quantity from the value. The present invention also comprises an electromagnetic wave radiation simulating apparatus for inputting a pseudo discharge signal to the device to be measured and previously obtaining the relation between the second order integral value and the discharge charge quantity, the processing section obtains the discharge charge quantity from the second order integral value with reference to the previously obtained relation between the second order integral value and the discharge charge quantity.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: An apparatus for measuring a lifetime of charge carriers that has a measuring probe and a component for directing ultraviolet radiation to a measuring position. The measuring probe also includes at least one electrode provided at a predetermined spatial relationship to the measuring position. A microwave source is adapted to direct microwave radiation to the measuring position, a microwave detector is adapted to measure an alteration of an intensity of microwave radiation reflected at the measuring position in response to the ultraviolet radiation and a semiconductor structure holder is adapted to receive a semiconductor structure and to provide an electric contact to a portion of the semiconductor structure. Additionally, a device for moving the substrate holder relative to the measuring probe is provided for positioning at least one portion of the semiconductor structure at the measuring position.

Abstract: A photodetector array (142) includes a plurality of photodetector cells (202) such as avalanche photodiodes (208) and readout circuits (210). An array self-tester (226) tests a dark count or other performance characteristic of the cells (202). The test is performed in connection with the manufacture of the array (142) or following the installation of the array (142) in a detection system (100).

Abstract: An image sensor has a plurality of pixels, each pixel having a photodiode (12), a voltage amplifier (16) having gain greater than 1 and a sampling capacitor (18) charged by the voltage amplifier. In this arrangement, each pixel provides gain through voltage amplification. This enables the sampling capacitor (18) to be kept to a low size, so that the pixel circuitry occupies the smallest possible space, thereby enabling large aperture pixels to be formed.