Abstract: The present invention provides an apparatus for measuring thickness of thin materials used for batteries such as an electrode and a separator, the apparatus including an inductive sensor for measuring a length displacement, wherein the sensor comprises a sensor tip having a spherical surface that is retracted by vacuum; a bottom tip disposed on an opposite side of the sensor tip with respect to a sample to support the sample and having a spherical surface; a decompression unit includes a pump to apply a reduced pressure to retract the sensor tip, a motor, a power source, and a control unit; a body including a top surface on which the sample is placed, at a center of which the bottom tip is disposed; and a fixing unit disposed on the body, wherein the sensor is fixed to the fixing unit.

Abstract: A test probe includes an electrically insulating handle, an electrically conducting blade extending from the handle, an electrically insulating shroud including a first portion and a second portion that are at least partially disposed around the electrically conducting blade. A housing is attached to the handle such that the first portion of the shroud is disposed within the housing, and the second portion of the shroud extends from an aperture formed in the housing. A spring disposed between the handle and the shroud biases the shroud toward the aperture formed in the housing. The shroud protects the electrically conducting blade from unintentional contact with a conductor during testing. When the test probe is correctly positioned on a device being tested, the shroud retracts into the housing exposing the electrically conducting blade. When the test probe is moved away from the device, the shroud returns to its original position.

Abstract: A robotic coordinate measurement machine (CMM) having a contact direction sensitive (CDS) probe is usable to detect internal dimensions for an object of interest. A robot arm may contact a surface with the CDS probe which may then detect a magnitude and direction of the resulting reaction force. The robotic CMM may monitor the magnitude and/or direction of the reaction force while the CDS probe is being slide across a surface to determine dimensions for the surface. Changes in the reaction force sensed by the CDS probe may be used to identify contact with other surfaces of contours in the surface the CDS probe is being slid across. A path of the CDS probe may be altered based on the contact with other surfaces or the contours.

Abstract: A probe for a vertical probe card includes an unsupported base portion that extends from the vertical probe card, a cantilevered portion that extends substantially perpendicular to the unsupported base portion and a contact portion that includes a tip. The cantilevered portion has a first thickness at an end adjacent the unsupported base portion and a second thickness at an end adjacent the contact portion, the second thickness being less than the first thickness.

Abstract: Described is an apparatus comprising: an input pad; an output pad; a wire, coupled to the input pad and the output pad, the wire positioned at a periphery of a semiconductor die, the wire extending substantially along a perimeter of the semiconductor die; and one or more diodes, coupled at various sections of the wire, and positioned along the perimeter of the semiconductor die and surrounding the semiconductor die.

Abstract: A paper feed device includes: a sensor unit that includes a coil substrate and a conductive plate which is opposite the coil substrate, that outputs an output value corresponding to a position of the conductive plate; a first cursor link mechanism which moves the first conductive plate according to the position of the first cursor in the longitudinal direction of the first coil substrate; a storage unit which stores first sheet size data; and a control unit which recognizes the magnitude of the first output value of the sensor unit and which recognizes, based on the recognized magnitude of the first output value and the first sheet size data, the size of the set sheets.

Abstract: A system for measuring dimensions and/or other internal properties of a shoe, garment or other object of interest is described. The system includes a fixture having a measurement tip. When the tip is placed inside of the object of interest, a processor collects positional data from the fixture to develop a three-dimensional model of the interior of the object. If the measurement tip includes one or more pressure sensors, the processor may collect pressure data and use the pressure data to include stretch properties in the three-dimensional model.

Abstract: A microelectromechanical device for electromechanical testing a specimen having a nano-scale dimension is formed on a multi-layered semiconductor substrate (chip) and includes an electrothermal or electrostatic actuator for applying a displacement load (force) to the specimen, a load sensor for sensing the load (force) experienced by the specimen. The specimen is disposed between first and second movable shuttles of the actuator and load sensor, which shuttles comprise electrically insulating layers so as to electrically isolate the shuttles and specimen from the actuator and the load sensor on the substrate. A four-terminal Kelvin array is provided to provide specimen electrical characterization measurements and includes first and second outer terminals connected to a current source and to opposite end locations of the specimen and first and second inner terminals connected to a high input impedance voltage meter and to the specimen at other locations between the first and second outer terminals.

Abstract: One embodiment includes a method for protecting from the accidental application of an electrical potential to an incorrect pin of a multipin electrical connector during testing. A sleeve is fitted around a pin that is not to have potential applied to it such that the pin is protected from accidental application of potential during testing.

Abstract: Provided is a test pattern structure for determining overlay accuracy in a semiconductor device. The test pattern structure includes one or more resistor structures formed by patterning a lower silicon layer. Each includes a zigzag portion with leads at different spatial locations. An upper pattern is formed and includes at least one pattern feature formed over the resistor or resistors. The portions of the resistor or resistors not covered by the upper pattern feature will become silicided during a subsequent silicidation process. Resistance is measured to determine overlay accuracy as the resistor structures are configured such that the resistance of the resistor structure is determined by the degree of silicidation of the resistor structure which is determined by the overlay accuracy between the upper and lower patterns.

Abstract: A constant current generating circuit and constant current generating method applied to a chip are provided, where the chip includes a first current generating circuit and a second current generating circuit, the second current generating circuit includes a transistor and an adjustable resistor. The constant current generating method includes: connecting an external resistor to the first current generating circuit to make the first current generating circuit use the external resistor to generate a first current; utilizing the second current generating circuit to generate a second current; adjusting the adjustable resistor in accordance with the first current and the second current to make the second current substantially equal to the first current, where the second current serves as a constant current of the chip.

Abstract: Described is an apparatus comprising: an input pad; an output pad; a wire, coupled to the input pad and the output pad, the wire positioned at a periphery of a semiconductor die, the wire extending substantially along a perimeter of the semiconductor die; and one or more diodes, coupled at various sections of the wire, and positioned along the perimeter of the semiconductor die and surrounding the semiconductor die.

Abstract: Provided is a method for manufacturing a multi-layer wiring board and the multi-layer wiring board that are capable of suppressing variation in resistance values. The method according to the present invention is the method for manufacturing a multi-layer wiring board. The method includes forming a resistor thin film, measuring resistance distribution of the resistor thin film, calculating resistor width adjustment rates of the plurality of resistors according to the resistance distribution, forming a pattern of a protective film on the resistor thin film, in which the pattern of the protective pattern has pattern width according to the resistor width adjustment rate, forming a pattern of a plating film on the resistor thin film at a position exposed from the protective film, and etching the resistor thin film at a position exposed from the plating film and the protective film so as to pattern the resistor thin film.

Abstract: A submersion detection circuit includes a power source unit, a reference resistor connected between the power source unit and a voltage measurement node, a submersion unit configured to include a plurality of submersion measurement resistors connected in parallel to the voltage measurement node. Submersion contact terminals are formed at respective ends of the submersion measurement resistors, and a voltage measurement unit connected to the voltage measurement node and configured to measure voltage divided by the reference resistor and the submersion unit when the submersion contact terminals submerge.

Abstract: Disclosed is a sensor that can accurately detect displacement and prevents the phenomenon of a contact section between a shaft member and a sliding element receiver being shifted. The sensor comprising: a case having a through hole; a resistance substrate fixed at an inside of said case; a shaft member having a first end portion which is one end of the shaft member placed within said case and a second end portion which is other end of the shaft member exposed to an outside of said case from said through hole, said shaft member being placed at said through hole in a movable manner in an axial direction; and a sliding element receiver having a bearing end contacting with said second end portion of said shaft member, and attached with a brush sliding together with said resistance substrate, said sliding element receiver being capable of moving relatively against said resistance substrate with said shaft member. A hemispherical end face is formed at said first end portion.

Abstract: A method for performing corrosion testing is provided. The method includes applying a thin film of silicone to an electrical device to be tested, positioning the device in a chamber, connecting the device to electrical testing equipment for determining any change in electrical resistance of the device, and disposing a gaseous compound of sulfur in the chamber. The method also comprises monitoring the device for any change in electrical resistance for indicating failure of the device.

Abstract: A system and method by which thickness of a dielectric film on substrates can be noninvasively determined is invented. The system and method are especially applicable to areas and applications where traditional techniques have proven unsuccessful or limited. According to embodiments of the present invention the present system and method can be used to measure film thickness in confined and inaccessible locations, and on substrates of complex geometry. The method can be used with an arbitrary and time varying orientation of the substrate-film interface. The measurements of the film thickness on the inside of open or enclosed channels of an arbitrary geometry, and on flexible substrates are possible. With multiple embedded sensors, the film thickness in different lateral locations can be simultaneously measured. The dielectric permittivity of the FUT as a function of the distance from the substrate of the film can also be measured.

Abstract: A distance measuring device and method for determining distance, and a suitable reflective member are provided. The distance measuring device includes analysis electronics and a sensor device, which has at least one coupling probe for feeding a transmission signal into a line structure. A reflective member is disposed in the line structure which has a base plate with an attached collar forming a cup-shaped element, and a feed block with a recess into which the collar plunges. The recess has a sealing ring which produces airtightness with the collar, wherein the attached collar is provided on the front face with a plastic plate.

Abstract: A system to measure thickness of a shroud is provided. The system includes at least one resistive element embedded within the shroud. A reduction in a cross-sectional area of the at least one resistive due to wearing out of the shroud results in a change in a resistance of the at least one resistive. The system also includes an impedance measurement device that measures a total resistance associated with the at least one resistive element.

Abstract: A method includes positioning body-electrodes in galvanic contact with a body of a patient and positioning a mapping-tool, having a mapping-electrode, in a plurality of regions in the body. The method further includes tracking the mapping-tool at different positions in each of the regions using a location-measuring system, and for each region, generating a respective set of calibration-currents between the body-electrodes and the mapping-electrode at the different positions in the region. A respective relation is derived for each region between the respective set of the calibration-currents and the different positions, and is used in determining the location of an investigation-tool in response to the different respective relations and investigation-tool-currents.

Abstract: A capacitance sensing apparatus for use in a position sensing apparatus, comprising a first set of electrodes and a second set of electrodes and a capacitance sensing circuit arranged to determine, in use in a normal operating mode, the capacitance between each pairing of electrodes comprising one from the first set and one from the second set, in which the apparatus is further provided with at least one group switch arranged to selectively electrically connect together groups of the electrodes within the sets of electrodes, in which, in use in a low resolution mode of the apparatus the or each group switch connects together the groups of electrodes and the capacitance sensing circuit is arranged to determine the capacitance between the each pairing of groups of electrodes in one set and the electrodes or groups of electrodes of the other set. Typically, the apparatus is used in conjunction with a display to form a touch-sensitive display.

Abstract: A method for determining a distance between a first piece and a second piece includes measuring, at the first or second piece, an AC signal, and determining the distance based on the measured AC signal. A system for determining a distance between a first piece and a second piece includes a measuring device adapted to measure, at one or both of the first and second piece, an AC signal, and a signal processing device adapted to determine the distance based on the measured AC signal. The AC signal includes a DC offset.

Abstract: The invention relates to a system for measuring a physical variable using a plurality of measuring sensors (20). Said system is characterized in that an inverting measuring signal amplifier (17; 17.1, 17.2) is connected downstream of every measuring sensor (20), one output of a sensor (20) each being connected to an inverting input of the measuring signal amplifier (17; 17.1, 17.2) connected downstream of the measuring sensor (20).

Abstract: An apparatus and method for measuring and monitoring layer properties in web-based processes are described. The apparatus includes multiple electrode devices adjacently positioned on a surface of a web material, which advances with a predetermined speed. The electrode devices perform measurements of electrical parameters of a layer of the web material and provide an electrical signal to a layer deposition system for further adjustment of layer properties of the layer.

Abstract: A method for providing an electronic lapping guide (ELG) for a structure in a magnetic transducer are described. The structure has a front edge and a back edge. The ELG includes a stripe having a top edge and a bottom edge. The method includes calibrating a sheet resistance of the stripe and calibrating an offset of the top edge of the stripe from the back edge of the structure. The method further includes terminating the lapping based at least on the sheet resistance and offset of the ELG.

Abstract: A system monitors growth characteristics of a plant having a root buried in a prescribed volume of ground using a plurality of electrodes inserted into the ground at a known spacing relative to one another in proximity to the root or root-like structure. When electrical current is applied to some of the electrodes, electrical potential is measured at other ones of the electrodes to construct a representation of electrical impedance across the prescribed volume locating the root or root-like structure. Growth characteristics of the soil and the plant, for example root size, root shape, soil moisture content, and the like, can be identified by locating variations of the electrical impedance.

Abstract: A distance measuring device and method for determining distance, and a suitable reflective member are provided. The distance measuring device includes analysis electronics and a sensor device, which has at least one coupling probe for feeding a transmission signal into a line structure. A reflective member is disposed in the line structure which has a base plate with an attached collar forming a cup-shaped element, and a feed block with a recess into which the collar plunges. The recess has a sealing ring which produces airtightness with the collar, wherein the attached collar is provided on the front face with a plastic plate.

Abstract: Sheet resistance, junction leakage and contact conductivity of a semiconductor layer, associated with an ultra-shallow junction layer or metal film are measured by contacting the surface with a plurality of probes. The probes can be used, in conjunction with a four-point probe system, to determine sheet resistivity. Junction leakage through an ultra-shallow junction is determined by establishing a reverse bias across the junction set at a predetermined voltage value, measuring through a first probe a total junction current conduction value, measuring through second, third, and fourth probes a plurality of voltage values. The junction leakage value is then directly computed based on the sheet resistivity value, reverse bias potential, wafer radius, and the measured voltage values. Contact conductivity between a metal film and semiconductor layer can be similarly directly computed.

Abstract: An operating device for a cooktop has a cover with a control panel with a plurality of operating areas. Below the panel, several FSR sensors are positioned. When a control panel is pushed down by a process of operation, the FSR sensor changes its electrical resistance resulting in change of a signals that can be detected and interpreted as operation of the appliance by a user.

Abstract: A clearance sensing system is disclosed. The system includes a probe separated from a test object by a variable distance d. The system also includes an alternating current (AC) source for supplying a current through the probe, wherein the AC source and the probe are configured to generate a controlled plasma channel between a tip of the probe and the test object. The system further includes a processing unit configured to determine the variable distance d based on a voltage difference between the tip of the probe and the test object.

Abstract: The present invention is a conductivity measuring device comprising that two terminals tweezer having two probes of a observing probe and a grasping probe arranged contiguously along the face which is parallel to a sample support face. Two terminals of a tweezer are pressed while adjusts pressing force to a sample surface, it is galvanized between two terminal tweezer, and conductivity is determined making a current between the two terminals tweezers.

Abstract: The present invention describes a system and method for monitoring a material film within a plasma processing device. The system includes a plasma reactor formed by a reactor wall and an electrode, a RF generator to couple electrical energy to the electrode, an electrical measurement device for measuring an electrical property of the plasma processing device, and a controller coupled to the electrical measurement device and programmed to determine a state of a film on the reactor wall based on the measured electrical property.

Abstract: An elongate contact switch is disclosed having several partial contact areas and associated illumination means for indicating the actuation mode and also the actuation point to an operator, in order to increase operational effectiveness. The illumination means can be directly associated with individual partial contact areas or can indicate the progress of movements for operating the contact switch by applying a finger and pulling the same along a contact area. Moreover, malfunctions can be indicated to the operator.

Abstract: A system and method are disclosed for determining the effective channel width (Weff) and the effective channel length (Leff) of metal oxide semiconductor devices. One advantageous embodiment of the method provides a plurality of metal oxide semiconductor field effect transistor capacitors in which each capacitor has a same value of drawn channel length but a different value of drawn channel width. A value of Fowler-Nordheim tunneling current is measured from each capacitor. Channel width offset is the difference between the drawn channel width and the effective channel width. A value of channel width offset is obtained from the measured values of the Fowler-Nordheim tunneling currents and used to determine the value of effective channel width. A similar method is used to determine the value of the effective channel length.

Abstract: A method of operating a passenger screening kiosk system to perform at least one verify a passenger's identity, detect the presence of an explosive material, and detect the presence of a metallic material includes initiating a prompt to be issued by the passenger screening kiosk system to prompt the passenger to enter the passenger screening kiosk system, prompting the passenger to enter the passenger screening kiosk system, and determining whether the passenger is within the passenger screening kiosk system.

Abstract: A method that uses a goodness of fit test/measurement (e.g., correction coefficient) for process control of a test parameter (e.g., resistance). At least the minimum number of test values required to calculate a goodness of fit test is obtained. A curve is fitted for the test parameters values and the independent variable(s). A goodness of fit measurement/test (e.g., correlation coefficient) is calculated for the curve and data. The goodness of fit measurement value is used for process control. Control limits can be established on the goodness of fit measurement values. The use of the goodness of fit test is a sensitive test that can used to control processes with low level defects or small fluctuations.

Abstract: According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron species or other atom-specific characteristic electron species emitted by the structure when bombarded with photons. A predictive intensity function that is dependent on the thickness of a layer is determined for each photoelectron species. A ratio of two predictive intensity functions is formulated, and the ratio is iterated to determine the thickness of a layer of the structure. According to one embodiment, two photoelectron species may be measured from a single layer to determine a thickness of that layer. According to another embodiment, two photoelectron species from different layers or from a substrate may be measured to determine a thickness of a layer.

Abstract: A method of determining the time to failure of parallel electro migration test structures is described. The method generally includes the steps of: measuring the resistance of the complete structure; calculating the resistance of the n individual parallel structures from the measured resistance; calculating the resistance of the complete structure after the failure of m individual parallel structures, for m=1 to n; and recording the time of failure for each m as the time when the resistance is approximately the value predicted for m fails.

Abstract: A method for the electrical measurement of the thickness of a semiconductor layer ( 10, 11, 12) is disclosed. Active layers on SOI wafers, EPI layers with inverse conductivity tape and membrane thickness can be measured by use of a test structure which can routinely be measured during a production process. The embodiment of the test structure (A1 to F1) is preferably annular, such that a high degree of symmetry is achieved on propagation of the measuring current and such that no interactions occur with surrounding structures. The diameter of the arrangement can be matched to the corresponding thickness range of the semiconductor layer to be measured using conventional U-I parameter test systems, conventionally applied in semiconductor production. The determination of the layer thickness is achieved by means of two sequential quadrupole measurements at six contact points.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

Abstract: A clearance sensing system is disclosed. The system includes a probe separated from a test object by a variable distance d. The system also includes an alternating current (AC) source for supplying a current through the probe, wherein the AC source and the probe are configured to generate a controlled plasma channel between a tip of the probe and the test object. The system further includes a processing unit configured to determine the variable distance d based on a voltage difference between the tip of the probe and the test object.

Abstract: The invention relates to a method for determining the thickness of a coating on a composite material by applying induced currents wherein the composite material together with its coating is placed on a conducting material, in which circulating electric currents induced by an alternating magnetic field are created, an indirect measurement being subsequently carried out based on the measurement of the lift-off effect that the coating, together with the composite material, offers in induced currents against the mentioned conducting material.

Abstract: A paper-width detecting device includes a paper guide, a conductive element, a circuit board and a control-processing unit. The paper guide is movably disposed on a paper tray for accommodating different sizes of papers. The conductive element attaching to the paper guide and moving simultaneously with the paper guide has a plurality of first conductive portions. The circuit board has a plurality of conductive wires, which is formed by a plurality of separated second conductive portions on the surface of the circuit board. An insulating region is formed between any two adjacent second conductive portions of each conductive wire. The control-processing unit is for providing an electric voltage between the conductive wires and the conductive element. When the paper guide presses against the paper, the control-processing unit generate a paper-width value corresponding to the number of current passages formed between the first conductive portions and the corresponding conductive wire thereof.

Abstract: A reliability evaluation test apparatus of this invention includes a wafer storage section which stores a wafer in a state wherein the electrode pads of a number of devices formed on the wafer and the bumps of a contactor are totally in electrical contact with each other. The wafer storage section transmits/receives a test signal to/from a measurement section and has a hermetic and heat insulating structure. The wafer storage section has a pressure mechanism which presses the contactor and a heating mechanism which directly heats the wafer totally in contact with the contactor to a predetermined high temperature. The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.

Abstract: Instrumentation for monitoring crack growth using a change in electric potential across a starter crack as the crack propagates is disclosed. The instrumentation includes a specimen of a material to be analyzed for crack growth propagation having a surface with a starter crack formed therein, a plurality of current leads to pass electric current through the specimen, a layer of insulating material disposed on each of opposite sides of the crack, a layer of conductive material disposed on each layer of insulating material, where a portion of each layer of conductive material is in electrical contact with the first specimen surface, and a pair of sensing leads, one sensing lead attached to each layer of conductive material. A method for using the instrumentation to monitor crack growth by measuring is also disclosed.

Abstract: There is provided an amplitude varying driver circuit operable to output an output signal, which is an amplified input signal being supplied. The amplitude varying driver circuit includes: a plurality of differential amplifiers provided in parallel with one another, wherein a signal corresponding to the input signal is input into each base terminal thereof; a resistor section, which is provided in series with the plurality of differential amplifiers, operable to establish potential of the output signal according to total current flowing to the plurality of differential amplifiers; and an amplitude control transistor, which is provided in series with the plurality of differential amplifiers, operable to define total current flowing to the plurality of differential amplifiers.

Abstract: A system and method for measuring a voltage differential in a current-carrying pipe using a propulsion vehicle. The system may be adapted for use with a pipeline pig or other propulsion device, which is configured to determine the electric current in a pipeline with nominal noise while the apparatus is moving. One aspect of the present invention is a pig which is outfitted with electrical contacts. These electrical contacts may optionally consist of rotating steel brushes and/or rotating steel knives. The pig includes data logging capabilities which may record location and voltage data. A pig according to the present invention optionally may include electromechanical devices which reduce electrical noise.

Abstract: An on-chip redundant crack termination barrier structure, or crackstop, provides a barrier for preventing defects, cracks, delaminations, and moisture/oxidation contaminants from reaching active circuit regions. Conductive materials in the barrier structure design permits wiring the barriers out to contact pads and device pins for coupling a monitor device to the chip for monitoring barrier integrity.

Abstract: A fluid level (26) is measured through determining an inclination angle of a bracket (32) that rotatably connects a floating member (34) located near a surface of the fluid to a pivoting arrangement (28, 30) which carries a resistor (40) of which a first part is branched off through a slider (42) moving along with a change in the angle. In particular, the following steps are executed. First, connecting a stabilized power supply (U0) with its first terminal in series with a limiting resistor (RV) to one end of the resistor (40); second, measuring the voltages over both the first part (UF) and over a remainder part (UE) of the resistor. Finally, calculating the resistance value of the first part (RX) through eliminating a contact resistance value (RU, 46) associated with the slider from the measurement equations given by the values of the respective voltages (UF, UE).

Abstract: The present invention provides novel devices for measuring internal dimensions of microscale structures. Methods in accordance with the invention use the voltage measured at a midpoint between a reference structure and a sample structure to determine the resistance of the sample structure, and to then calculate an internal dimension of the sample structure.