Abstract: An ESD protection circuit for an input/output buffer in which when an ESD pulse or event occurs, an ESD surge on a pad is discharged to a diode and a transistor channel, thereby enhancing the efficiency of the ESD protection circuit. The ESD protection circuit includes a floating N-well bias circuit connected to a pad at an output of driver circuit and outputting a bias voltage based on or in response to a supply voltage; a switch circuit connected to a logic circuit and the driver circuit, and configured to connect and disconnect the logic circuit and the driver circuit based on or in response to the supply voltage; and a pull-down circuit connected to the driver circuit, configured to output a voltage to the driver circuit based on or in response to the supply voltage.

Abstract: An integrated circuit may include multiple programmable logic regions and a first plurality of routers. Each of the first plurality of routers is coupled to a respective region of a first portion of the programmable logic regions, and each of the first portion of the plurality of regions transmits configuration data to a first set of adjacent regions of the first portion of regions. The integrated circuit may also include a second plurality of routers, and each of the second plurality of routers is coupled to a respective region of a second portion of the regions. Each of the second portion of the regions transmits the configuration data to a second set of adjacent regions of the first portion of regions. The integrated circuit may also include a voltage regulator that distributes a voltage to each of the regions.

Abstract: Various embodiments of the present technology may provide methods and apparatus for an output buffer. The output buffer is configured to perform in both a DP mode and an HDMI mode, as well as meet certain compliance conditions in an HDMI compliance testing mode. The output buffer includes a plurality of transistors and resistors arranged to operate in DP mode and HDMI mode. The plurality of transistors and resistors are arranged to reduce leakage current during the HDMI compliance testing mode.

Abstract: A semiconductor device provided with a first node to which a first power supply potential is supplied, a second node to which a second power supply potential lower than the first power supply potential is supplied, a signal terminal configured to be used in order to at least output a signal, an output driver including a first output element configured to supply the first power supply potential to the signal terminal when in an ON state, and a second output element provided in a P-well electrically separated from a semiconductor substrate and configured to supply the second power supply potential to the signal terminal when in an ON state, and a switch circuit configured to selectively supply a potential to the P-well, according to at least a potential of the signal terminal.

Abstract: A level converter for a vehicle control device, including: a first voltage terminal; a second voltage terminal; at least one output terminal; an input terminal; a first switch for switching a first current path between the first voltage terminal and the at least one output terminal or one of the output terminals; and a second switch for switching a second current path between the second voltage terminal and the at least one output terminal or another of the output terminals; the first and second switches being switchable in response to different levels at the input terminal so that when a first level is present at the input terminal, the first switch is closed and the second switch is open, and so that when a second level is present, the first switch is open and the second switch is closed. Also described is a related control device, utility vehicle and method.

Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to generate a first output signal based on a logic value of a first input signal. The output stage is configured to receive the first output signal transmitted according to the logic value of the first input signal, and to generate a second output signal. The second output signal has a logic value that is different from a logic value of the first output signal, and the second output signal and the first input signal has a same logic value.

Abstract: A level shift device includes a high breakdown voltage element in which a voltage of an internal power supply part is applied to a gate, an external input signal is input from outside to one of a source and a drain, and the other one of the source and the drain outputs an intermediate output signal of the same phase as that of the external input signal, and a comparator comparing the intermediate output signal with a threshold value so as to perform conversion into a Hi/Lo signal defined by a voltage of the internal power supply part and outputting the signal to an internal processing circuit. The high breakdown voltage element, the comparator, the processing circuit, and the internal power supply part are enclosed in the device.

Abstract: A transmission device according to the disclosure includes a first driver section and a setting section. The first driver section selectively sets a voltage at a first output terminal to one of a first voltage, a second voltage, and a third voltage that is between the first voltage and the second voltage. The setting section dynamically sets an output impedance of the first driver section at a time when the first driver section sets the voltage at the first output terminal to the third voltage.

Abstract: A semiconductor integrated circuit includes an output circuit driven by a power voltage across a first and a second node. A control circuit is driven by the power voltage to control output a digital signal at a pad terminal, a logic value of the signal being set by a core circuit connected to the output circuit. The digital signal causes a voltage at the first node to be high and a voltage at the second node to low when a predetermined power voltage higher than a withstanding voltage of the output circuit is applied across the first and second nodes. The control circuit controls voltages across terminals of switching elements in the output circuit to be less than their withstanding voltages and to prevent current flowing from the pad terminal to the output circuit when the first power node is in a high impedance state.

Abstract: A transmitter is disclosed with a pull-up feedback circuit and a feedback circuit. The transmitter includes an output driver for driving an output terminal.

Abstract: An integrated circuit capable of preventing current backflow to a power line is provided. The integrated circuit includes an input circuit. The input circuit includes a bonding pad and a pull-up circuit, a pull-up switch, a bulk controlled switch and a control circuit. The pull-up switch includes a first control node and a first bulk node. The bulk controlled switch includes a second control node and a second bulk node. The control circuit controls the first and second control nodes according to an internal signal, a power voltage of the power line and a pad voltage of the bonding pad. When the power voltage is a predetermined voltage, the control circuit turns on the bulk controlled switch. When the power line is at a ground voltage and the bonding pad voltage is at the predetermined voltage, the control circuit turns off the bulk controlled switch and the pull-up switch.

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including a data transmitting circuit that transmits data in parallel through a plurality of signal lines and a data receiving circuit that receives the data. The data transmitting circuit includes a plurality of data output circuits that output the data in a data transmission mode or set an output to a high impedance state in a HiZ mode, a plurality of data selection circuits that select one of the data and fixed data and output the selected data to the data output circuits, and a control circuit that controls the data output circuits to output the fixed data during a period between a time when a mode is switched from the HiZ mode to the data transmission mode and a time when the data output circuits start to output the data.

Abstract: Techniques for reducing scan overhead in a scannable flop tray are described herein. In one embodiment, a scan circuit for a flop tray comprises a tri-state circuit configured to invert an input data signal and output the inverted data signal to an input of a flip-flop of the flop tray in a normal mode, and to block the data signal from the input of the flip-flop in a scan mode. The scan circuit also comprises a pass gate configured to pass a scan signal to the input of the flip-flop in the scan mode, and to block the scan signal from the input of the flip-flop in the normal mode.

Abstract: A CMOS device includes a PMOS transistor and an NMOS transistor. The CMOS device further includes a poly interconnect connecting together a drain of the PMOS transistor and a drain of the NMOS transistor. The poly interconnect may be located on an edge of a standard cell including the device. The CMOS device may further include a first interconnect on an MD layer connecting the drain of the PMOS transistor to the poly interconnect, and a second interconnect on the MD layer connecting the drain of the NMOS transistor to the poly interconnect. The PMOS transistor and the NMOS transistor may operate as a CMOS inverter. The CMOS device may be a tristate inverter, and specifically, a tristate inverter within a latch array.

Abstract: Apparatus and method for digital configuration of integrated circuits (ICs) are provided herein. In certain implementations, an IC includes an impedance sensing circuit and at least one pin used for digital configuration. The impedance sensing circuit can detect an impedance value of an external passive network electrically connected to the pin, and can digitally configure the IC based on the detected impedance. For example, an end-user can connect an external resistor of a particular resistance to the pin, and the impedance sensing circuit can sense or detect the external resistor's resistance and digitally configure the IC based on the detected resistance. Accordingly, an end-user can digitally configure the IC by connecting a passive external component corresponding to a desired digital configuration to the pin. In certain implementations, the IC includes multiple pins, and the digital configuration is based on the impedances detected on each of the pins.

Abstract: In accordance with some embodiments of the present disclosure, an oscillator circuit comprises, a first pad associated with a first terminal of an oscillator and a second pad associated with a second terminal of the oscillator. The oscillator is configured to generate an oscillating signal and communicate the oscillating signal from the second terminal to a clock distributor coupled to the second pad. The oscillator circuit further comprises an oscillator gain element comprising an output node coupled to the first pad and an input node coupled to the second pad. The oscillator circuit also comprises a digital-to-analog converter (DAC) coupled to the first pad. The oscillator circuit additionally comprises a switching circuit coupled to the gain element. The switching circuit is configured to enable the gain element when the oscillator comprises a resonator and disable the gain element when the oscillator comprises a voltage controlled oscillating module.

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including a data transmitting circuit that transmits data in parallel through a plurality of signal lines and a data receiving circuit that receives the data. The data transmitting circuit includes a plurality of data output circuits that output the data in a data transmission mode or set an output to a high impedance state in a HiZ mode, a plurality of data selection circuits that select one of the data and fixed data and output the selected data to the data output circuits, and a control circuit that controls the data output circuits to output the fixed data during a period between a time when a mode is switched from the HiZ mode to the data transmission mode and a time when the data output circuits start to output the data.

Abstract: Memories, driver circuits, and methods for generating an output signal in response to an input signal. One such driver circuit includes an input stage and an output stage. The input stage receives the input signal and provides a delayed input signal having a delay relative to the input signal. The output stage receives the delayed input signal and further receives the complement of the input signal. The output stage couples an output node to a first voltage in response to a complement of the input signal having a first logic level and couples the output to a second voltage in response to the complement of the input signal having a second logic level. The output stage further decouples the output from the first or second voltage in response to receiving the delayed input signal to provide a high-impedance at the output node.

Abstract: A latch circuit has a tri-state gate and a reverse tri-state gate that share the same complementary controls. The reverse tri-state gate locks an output of the tri-state gate when the tri-state gate is shut-off. The complementary control signals include a first undoped polysilicon strip. The output of the reverse tri-state gate may be coupled to the output of the tri-state gate via a second undoped polysilicon strip.

Abstract: The present disclosure relates to an Apparatus comprising at least one resistive voltage divider and at least two inverters, wherein the resistive voltage divider is coupled between a first supply potential terminal (VDD) and a second supply potential terminal (VSS), wherein the voltage divider comprises a first resistor, a second resistor, a third resistor and a fourth resistor being serially connected, and wherein a first connection point of the second resistor and the third resistor is connected to an voltage input, and a second connection point of the first resistor and the second resistor is connected to the input side of a first inverter, and a third connection point of the third resistor and the fourth resistor is connected to the input side of a second inverter, wherein the first inverter and the second inverter are configured to provide a first output voltage if a first voltage is applied to the voltage input, and the first inverter and the second inverter are configured to provide a second output vo

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including a data transmitting circuit that transmits data in parallel through a plurality of signal lines and a data receiving circuit that receives the data. The data transmitting circuit includes a plurality of data output circuits that output the data in a data transmission mode or set an output to a high impedance state in a HiZ mode, a plurality of data selection circuits that select one of the data and fixed data and output the selected data to the data output circuits, and a control circuit that controls the data output circuits to output the fixed data during a period between a time when a mode is switched from the HiZ mode to the data transmission mode and a time when the data output circuits start to output the data.

Abstract: A device is disclosed herein, which may be used a level-shift circuit. The device includes first, second and third power supply lines supplied respectively with first, second and third power voltages that are different from one another, first and second input terminals and an output terminal, an output circuit coupled to the first power supply line, the first and second input terminals and the output terminal, a first inverter including an input node coupled to the first input terminal and an output node coupled to the second input terminal, a first transistor coupled in series to the first inverter between the second and third power supply lines, the first transistor being rendered non-conductive to deactivate the first inverter, and a control circuit configured to prevent the output terminal from being brought into an electrical floating state during deactivation of the first inverter.

Abstract: An apparatus having a first circuit and a second circuit. The first circuit may be configured to generate an output signal in response to (i) an intermediate signal, and (ii) a clock signal. The second circuit may be configured to generate the intermediate signal and a digital complement of the output signal in response to (i) an input signal and (ii) the clock signal. The intermediate signal may form a feedback to ensure the output signal and the digital complement of the output signal are in complementary states during a power up.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) chip. The IC chip includes core circuits having an operational mode and a power saving mode, and at least a pad module. The pad module includes a pad, a switchable pull-up module configured to pull up a voltage on the pad when the switchable pull-up module is switched on, a switchable pull-down module configured to pull down the voltage on the pad when the switchable pull-down module is switched on, and a control module configured to control the switchable pull-up module and the switchable pull-down module according to a detection of the voltage on the pad when the core circuits enter the power saving mode.

Abstract: A multiplexing circuit includes first and second tri-state inverters coupled to first and second data input nodes, respectively. The first and second tri-state inverters include first and second stacks of transistors, respectively, coupled between power supply and ground nodes. Each stack includes first and second PMOS transistors and first and second NMOS transistors. The first and second stacks include first and second dummy transistors, respectively.

Abstract: A multiplexing circuit includes first and second tri-state inverters coupled to first and second data input nodes, respectively. The first and second tri-state inverters include first and second stacks of transistors, respectively, coupled between power supply and ground nodes. Each stack includes first and second PMOS transistors and first and second NMOS transistors. The first and second stacks include first and second dummy transistors, respectively.

Abstract: A latch circuit includes a first tri-state inverter configured to invert an input voltage in response to a pulse and to output the inverted voltage to a first node, a second tri-state inverter connected between the first node and a second node and to invert a voltage of the second node in response to an inverted pulse being an inverted version of the pulse, and a variable inversion unit connected between the first node and the second node. The variable inversion unit adjusts a logical threshold value according to a logical value corresponding to a voltage of the first node and inverts a voltage of the first node based upon the adjusted logical threshold value, the logical threshold value indicating a voltage for discriminating the logical value.

Abstract: A circuit for detecting a single bit upset in a dynamic logic circuit includes a latch circuit having an input for receiving a reset signal, and an output for providing a flag output signal, the latch circuit being clocked by a first clock signal, a first transistor having a drain coupled to the output of the latch circuit, a gate for receiving a second clock signal, and a source, and a second transistor having a drain coupled to the source of the first transistor, a gate for receiving a third clock signal, and a source coupled to ground.

Abstract: Example driver circuits can utilize shared-charge recycling charge pump structures. In particular, an example shared-charge recycling process may be applied to a clock buffer and charge transfer cells of the charge pump in a driver circuit. An example recycling process may include recycling of shared charges between the capacitors/capacitances in the charge transfer cells. An example recycling process may use the charges in one or more capacitors to charge one or more other capacitors before the charges are wasted or otherwise discharged to ground. Such recycling may significantly reduce the power consumption of the charge pump while still providing a high output voltage level, according to an example embodiment of the invention.

Abstract: A high voltage tolerant bus holder circuit and method of operating the bus holder circuit utilizes first and second control transistors connected in parallel between a control terminal of a pull-up transistor and a bus. The first control transistor is used to turn on the pull-up transistor during a pull-up mode of operation. The second control transistor is used to turn off the pull-down transistor when a voltage on the bus exceeds a threshold.

Abstract: An output driving device prevents an inflow of external current through an output terminal even when there is no power supply. The output driving device includes an output circuit that maintains an output terminal at a low impedance state by receiving a supply of power in an output drive operation and maintains the output terminal at a high impedance state by receiving the supply of power in a non-output drive operation and a leakage prevention unit coupled to the output terminal of the output circuit, the leakage prevention unit preventing a current inflow to the output circuit through the output terminal when the supply of power is not supplied to the output circuit.

Abstract: A latch circuit includes a first tri-state inverter configured to invert an input voltage in response to a pulse and to output the inverted voltage to a first node, a second tri-state inverter connected between the first node and a second node and to invert a voltage of the second node in response to an inverted pulse being an inverted version of the pulse, and a variable inversion unit connected between the first node and the second node. The variable inversion unit adjusts a logical threshold value according to a logical value corresponding to a voltage of the first node and inverts a voltage of the first node based upon the adjusted logical threshold value, the logical threshold value indicating a voltage for discriminating the logical value.

Abstract: An integrated circuit (IC) includes an input/output (I/O) circuit supporting high-speed operation and multiple I/O logic-level swings. The I/O circuit includes a first output signal chain to generate outputs with a first logic level swing, and a second output signal chain to generate outputs with a second logic level swing. The outputs of the first output signal chain and the second output signal chain are connected to a same output pad of the IC. Transistors in the first output signal chain and the second output signal chain are fabricated using corresponding gate oxide characteristics. The second output signal chain includes protection circuitry to prevent transistors in the second output signal chain from being subjected to voltage stresses beyond a safe limit. An input circuit in the I/O circuit similarly includes multiple input signal chains to enable reception of input signals of different logic-level swings from a same input pad.

Abstract: A single terminal is used to configure an integrated circuit into one of three states. A circuit within the integrated circuit is coupled to the terminal and determines whether the terminal: 1) is coupled by a low impedance to a voltage source, or 2) is coupled by a medium impedance to the voltage source, or 3) is floating or substantially floating. The circuit asserts a first digital logic signal when the circuit determines that the terminal is coupled by the low impedance to the voltage source. The circuit asserts a second digital logic signal when the circuit determines that the terminal is coupled by the medium impedance to the voltage source. The circuit asserts a third digital logic signal when the circuit determines that the terminal is floating or substantially floating. The terminal and circuit are particular suited for use in a Power Management Unit (PMU) Integrated Circuit.

Abstract: An output buffer circuit has a variable output drive strength, depending on a buffer enable signal. Multiple output buffer circuits have a variable combined output drive strength, depending on a set of buffer enable signals.

Abstract: An interface of the present invention includes a first inverter circuit that inverts a logic level of an input signal given to an external input terminal and outputs the inverted logic level, a second inverter circuit that outputs a potential in which a logic level of an output signal of the first inverter circuit is inverted, that is, a potential higher or lower than a logic of an input signal applied to the first inverter circuit by the amount of a predetermined potential, and a feedback path that positive feedbacks an output signal of the second inverter circuit to the external input terminal. The interface circuit of the invention positive-feedbacks a potential of the output signal of the second inverter circuit and shifts the potential of the external input terminal in a floating state to an H or L level potential.

Abstract: A pull-up switching device for controlling connection and non-connection of an input terminal IN and a first supply VDD and a pull-down switching device for controlling connection and non-connection of the input terminal IN and a second supply VSS are provided. The pull-up switching device and the pull-down switching device are operated exclusively on and off in time division to hold and output the state of the input terminal during each operating state from the two output terminals.

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including a data transmitting circuit that transmits data in parallel through a plurality of signal lines and a data receiving circuit that receives the data. The data transmitting circuit includes a plurality of data output circuits that output the data in a data transmission mode or set an output to a high impedance state in a HiZ mode, a plurality of data selection circuits that select one of the data and fixed data and output the selected data to the data output circuits, and a control circuit that controls the data output circuits to output the fixed data during a period between a time when a mode is switched from the HiZ mode to the data transmission mode and a time when the data output circuits start to output the data.

Abstract: Method and apparatus are provided for buffering a data signal to a low voltage logic device. A circuit for buffering the data signal to the low voltage logic device includes an output buffer and an N-type transistor. The output buffer has an input and an output, where the input is configured to receive the data signal. The output buffer is configured to produce an output signal based on the data signal, and the output signal has a maximum potential. The N-type transistor has a source coupled to the output, a drain configured to couple to the low voltage logic device, and a gate configured to receive a bias potential, where the bias potential is greater than the maximum potential.

Abstract: A high-density semiconductor device includes a first input/output line connected among a plurality of banks on a core area storing data, so that it transmits data, a second input/output line connected to a data pad capable of performing data input/output operations at a Peri-area, so that it transmits data, a first repeater connected between the first input/output line and the second input/output line, for transmitting data of the first input/output line to the second input/output line in response to a read enable signal enabled by a read command, and a second repeater connected between the first input/output line and the second input/output line, for transmitting data of the second input/output line to the first input/output line in response to a write enable signal enabled by a write command.

Abstract: The tolerant buffer circuit and interface are provided in which reverse inflow of current to a power supply voltage from an output terminal does not occur, even if the output terminal is at a higher potential than an output circuit power supply voltage during open-drain operation in an output circuit of a semiconductor integrated circuit, or if the output circuit power supply voltage becomes 0 V.

Abstract: An input/output circuit, operable in an input mode and an output mode, for receiving data and an enable signal, the input/output circuit including an input/output terminal; a pull-up output transistor including a gate; a first logic circuit including an output node coupled to the gate of the pull-up output transistor; a pull-down output transistor including a gate; a second logic circuit coupled to the gate of the pull-down output transistor, and the second logic circuit inactivating the pull-down output transistor in the input mode; and a gate signal generation unit configured to generate a gate signal for inactivating the pull-up output transistor in accordance with the enable signal and an input signal provided from an external device to the input/output terminal in the input mode.

Abstract: A method includes controllably utilizing a control signal generated by an Input/Output (IO) core to isolate a current path from an external voltage supplied through an IO pad to a supply voltage by transmitting a same voltage at an input terminal of a transistor, configured to be part of a number of cascaded transistors of an IO driver of an interface circuit, to an output terminal thereof during a failsafe mode of operation and a tolerant mode of operation. The method also includes feeding back an appropriate voltage to a floating node created by the isolation of the current path, and controlling a voltage across each transistor of the number of cascaded transistors to be within an upper tolerable limit thereof through an application of a gate voltage to each transistor derived from the supply voltage or the external voltage supplied through the IO pad.

Abstract: An input/output circuit operable in input and output modes and including an input/output terminal, pull-up and pull-down output transistors, and first and second logic circuits operated in accordance with data and an enable signal. A control circuit maintains the pull-up output transistor in an inactivated state regardless of the voltage applied to the input/output terminal in the input mode. A switch circuit disconnects the first logic circuit from a power supply when an input signal having voltage higher than the power supply voltage of the power supply is input to the input/output terminal in the input mode. A back gate control circuit supplies back gates of P-channel MOS transistors in the first logic circuit and the switch circuit with back gate voltage having the same voltage as the input signal when the input signal is input in the input mode.

Abstract: A three stage circuit according to the invention comprises a data input, a data output, a control input, two voltage supply inputs. The first stage is electrically connected to the data input and control input and is defined by a combinatorial circuitry with two outputs. The second stage is defined by at least two transistors connected in series between the two voltage supply inputs with their inputs electrically connected to the respective outputs of the first stage and with a common output such that in connection with the first stage they operate as a tri-state gate. The third stage of that three stage circuit is electrically connected to the control input and the common output of the second stage.

Abstract: A controlling output buffer slew rate method and an output buffer circuit for a memory device is provided. The output buffer include an output stage formed by a PMOS transistor and a NMOS transistor electrically connected in series, a pre-driver for respectively controlling each gate terminal of the PMOS transistor and the NMOS transistor in order to bring these transistors to the turning-on threshold, a first wire, for transmitting a pull-up signal, coupled between the output stage and the pre-driver, and a second wire, for transmitting a pull-down signal, coupled between the output stage and the pre-driver. After a DATA signal transition (logic state is changed from “H” to “L” or “L” from to “H”), the PMOS or NMOS transistor is turned off first, and then the NMOS or PMOS transistor is turned on due to the time difference between the pull-up signal and the pull-down signal.

Abstract: A tristate buffer circuit includes a tristate buffer switchable into a high impedance state in response to configuration signal, a delay stage delays the an input signal to the tristate buffer and a gating stage having inputs for the input signal, a delayed input signal and an asynchronous tristate control signal and an output supplying the configuration signal to the tristate buffer. The gating stage sets the configuration signal to the high impedance mode only when the tristate control signal is set and the input signal and the delayed input signal have logic levels indicating that no signal transition of the input signal propagates within the delay stage. Depending upon signal polarity, the input signal and the delayed input signal are required to have the same digital state or opposite digital states.

Abstract: Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state allows interconnection to a common bus or other shared communication lines. In embodiments wherein the components are non-volatile, the inverter state and the control state are maintained in the absence of power. Such an inverter may be used in conjunction with and in the absence of diodes, resistors and transistors or as part of or as a replacement to CMOS, biCMOS, bipolar and other transistor level technologies.

Abstract: A method of operating an electronic device having an output driver with on die termination legs ODT, and non-ODT legs, includes the step of selectively tri-stating tuning transistors (ZQ trim devices) in the legs as a function of the operational state of the output driver. The tri-stating step is performed such that when a leg is not being utilized, the tuning transistors in the unused leg are placed in a tri-state. For example, during an ODT mode of the output driver, the tuning transistors in the non-ODT legs are tri-stated. During a READ mode of the output driver, the tuning transistors in the ODT legs are tri-stated. During a HiZ mode of the output driver, the tuning transistors in both legs are tri-stated. Tri-stating the tuning transistors in the unused output driver legs can reduce DQ pin capacitance by a total of approximately (Cgd+Cgs+Cgb).

Abstract: A logic circuit simulation apparatus used in designing a logic IC (integrated circuit) is provided. The logic circuit simulation apparatus includes a power control signal specifying unit which creates power control signal information for specifying statuses of a plurality of power control signals, a logic circuit simulation control information generation unit which reads the power control signal information and related circuit connection information and generates a logic circuit simulation control information based on the power control signal information and the circuit connection information, and a logic circuit simulation unit which fixes with high impedance each input of a circuit block to which power is not supplied in accordance with the logic circuit simulation control information, simulating the logic circuit.