Abstract: A memory system includes an interface circuit configured to connect to a host device, a controller electrically connected to the interface circuit, and a nonvolatile semiconductor memory electrically connected to the controller. The controller is configured to transmit a first response in response to a power supplied from the host device via the interface circuit, upon receipt of a first command from the host device after transmitting the first response, determine a status of data stored in the nonvolatile semiconductor memory, and transmit to the host device a second response including the determined status of the data stored in the nonvolatile semiconductor memory.

Abstract: The present invention discloses an isolation circuit having test mechanism. An isolation circuit component performs signal transmission when a signal that a control terminal receives has an enabling state and performs signal isolation when the signal has a disabling state. The test circuit includes a multiplexer and a control circuit. Under a shifting operation state in a test mode, the control circuit controls the multiplexer to select an operation input terminal to receive and output an isolation control signal having the enabling state to the control input terminal. Under a capturing operation state in the test mode, the control circuit controls the multiplexer to select a test input terminal to receive and output the test signal to the control input terminal. The control circuit further determines whether the isolation circuit performs signal transmission or signal isolation according to the signals at the data input terminal and the data output terminal.

Abstract: A device includes a clock generator configured to generate a root clock signal based on an input clock signal and a clock generator divider integer setting. The device also includes a first component coupled to the clock generator and configured to generate a first component clock signal based on the root clock signal and a first component divider integer setting. The device also includes a second component coupled to the clock generator and configured to generate a second component clock signal based on the root clock signal and a second component divider integer setting. The device also includes sync circuitry coupled to each of the clock generator, the first component, and the second component, wherein the sync circuitry is configured to perform synchronized adjustments to the root clock signal, the first component clock signal, and the second component clock signal.

Abstract: Provided is an integrated circuit. The integrated circuit includes a plurality of clock generators configured to respectively generate a plurality of clock signals, a plurality of logic circuits configured to operate in synchronization with the plurality of clock signals, and controller circuitry configured to identify meta-stability information based on frequencies of the plurality of clock signals, and configured to control at least one clock generator so that at least one of the plurality of clock signals is randomly delayed in response to the meta-stability information.

Abstract: The present invention provides a driving circuit and a display panel including at least two gate driving units, and at least two of the gate driving units are connected in a cascade arrangement. an Nth stage driving unit in the at least two of the gate driving units includes a pull-up control module, a pull-up module, a pull-down module, a pull-down maintaining module, and a bootstrap capacitor, wherein N is an integer greater than 0.

Abstract: A voltage reference circuit is disclosed comprising: a supply terminal; a ground terminal; a first current source and a Zener diode connected in series between the supply and ground terminals and having a first node therebetween and configured to supply a Zener voltage at the first node; an output node configured to provide a voltage reference; and a CTAT, circuit connected between the first node and the output node; wherein the CTAT circuit comprises: two bipolar transistors, having their respective emitters connected at a second node, and configured to, in operation, have equal collector-emitter currents, the base of the first bipolar transistor being connected to the first node, the base of the second bipolar transistor being connected to a centre node of a first voltage divider; and wherein the first voltage divider is connected between the emitter of the second bipolar transistor and the output node.

Abstract: A metastable state detection device and method, and an ADC circuit are disclosed. The metastable state detection device includes: a delay unit which is configured to receive a synchronization signal and delay the synchronization signal based on preset step delay values; a first flip-flop unit including a first clock input terminal, a first data input terminal and a first data output terminal, wherein the first clock input terminal is configured to receive a clock signal; the first data input terminal is configured to receive the delayed synchronization signal; a second flip-flop unit including a second clock input terminal, a second data input terminal and a second data output terminal; a processing module connected to the second data output terminal, which is configured to receive a target clock signal and detect a metastable state of the first flip-flop unit according to the target clock signal.

Abstract: A semiconductor device is provided. The semiconductor device includes a clock gate line supplying a clock signal, an inverted clock gate line disposed in parallel to the clock gate line and supplying an inverted clock signal, a first latch circuit performing a first latch operation based on the clock signal and the inverted clock signal and a second latch circuit disposed on a side of the first latch circuit in a first direction, receiving an output of the first latch circuit, and operating based on the clock signal and the inverted clock, wherein the clock gate line and the inverted clock gate line extend in the first direction and are shared by the first and second latch circuits.

Abstract: In various embodiments, rail decoupling circuits that are powered by an always on voltage rail allow a core voltage rail to power up independently of an I/O voltage rail without jeopardizing I/O pad circuits that are powered by the I/O voltage rail. In an embodiment, when the always on voltage rail is powered-up and a chip reset signal is asserted, the rail decoupling circuits drive control inputs of the I/O pad circuits based on default values. When the chip reset signal is de-asserted, the rail decoupling circuits drive the control inputs of the I/O pad circuits based on signals received from circuits powered by the core voltage rail. Because the rail decoupling circuits maintain control of the I/O pad circuits until the chip-reset is de-asserted, the core voltage rail can power up at any time before the chip-reset signal is de-asserted irrespective of when the I/O voltage rail powers up.

Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.

Abstract: A semiconductor integrated circuit includes a first flip-flop that includes a first slave latch, a second flip-flop that includes a second slave latch, and a clock generation circuit that provides a common clock signal to the first flip-flop and the second flip-flop. The first slave latch includes a first inverter, a first feedback inverter that receives an output signal from the first inverter, and a first switch that is connected between an input terminal of the first inverter and an output terminal of the first feedback inverter. The first flip-flop outputs an output signal from the output terminal of the first feedback inverter.

Abstract: Disclosed is a flip flop circuit including a master latch circuit receiving master input data based on target input data, a slave latch circuit configured to load master output data from the master latch circuit and to hold the master output data, and a data output section, target output data based on the target input data being output from the data output section. The slave latch circuit includes a first to an N-th slave latch circuits provided in parallel with the master latch circuit (N is an integer of 2 or larger), the flip flop circuit further includes an output selection circuit selecting any one of data output from the first to N-th slave latch circuits, and selection data from the output selection circuit is output from the data output section as the target output data.

Abstract: An integrated circuit (IC) has scan chains of stitched registers that support scan testing of functional logic. The scan testing has a shift phase in which incoming and outgoing data are shifted into and out of the registers using a slow clock and a capture phase in which outgoing data from the functional logic is captured by the registers using launch-and-capture pulses of a fast clock to check for delay faults. During a warm-up period after termination of the slow clock but before application of the launch-and-capture pulses, the registers propagate data through their master latches without affecting the data stored in their slave latches. A warm-up controller configures the registers and generates control signals to perform either launch-on-shift or launch-on-capture scan testing. The flow of data and the warm-up controller operations keep the power supply rail voltage sufficiently charged for the fast launch-and-capture pulses.

Abstract: A clock generation circuit is disclosed. The clock generation circuit includes a logic gate configured to, in response to a control input receiving a first control signal, generate an output clock based on a first input clock received by a first identified clock input. The logic gate is further configured to, in response to the control input receiving the second control signal, generate the output clock based on a fixed logic level. The logic gate is further configured to, in response to the control input receiving the second control signal, generate the output clock based on the second input clock.

Abstract: An oscillation circuit has a charge-discharge type oscillation unit that performs an oscillation operation at an oscillating frequency that is in accordance with a control current value, and a control current generation unit that generates the control current. The control current generation unit includes a reference voltage generation circuit that generates a reference voltage that has a first temperature characteristic, a temperature characteristic slope correction circuit that corrects a slope of a temperature characteristic of a reference voltage in accordance with first correction information and generates an output voltage that has a second temperature characteristic, and a voltage-current conversion circuit that converts the output voltage of the temperature characteristic slope correction circuit into the control voltage, and that corrects the control current value in accordance with second correction information.

Abstract: A clock generation circuit is disclosed. The clock generation circuit includes a logic gate configured to, in response to a control input receiving a first control signal, generate an output clock based on a first input clock received by a first identified clock input. The logic gate is further configured to, in response to the control input receiving the second control signal, generate the output clock based on a fixed logic level. The logic gate is further configured to, in response to the control input receiving the second control signal, generate the output clock based on the second input clock.

Abstract: Aspects of the disclosure provide for a method. In some examples, the method includes detecting a transition in an input signal (IN), generating a bias current based on the detected transition in IN, and modifying a charge status of a capacitor based on the charge current. The method further includes generating an output signal (OUT) based on the charge status of the capacitor, disabling the bias current generation based on values of IN and OUT, and strongly pulling the capacitor up or down based on the disabling the bias current generation.

Abstract: A ring oscillator is provided. The ring oscillator includes a pseudo pass-gate inverter, a third transistor, a fourth transistor and a delay chain. The pseudo pass-gate inverter includes a first transistor and a second transistor in series. The third transistor is connected in series with the pseudo pass-gate inverter. The drain of the fourth transistor is connected to an output of the pseudo pass-gate inverter. The gate of the fourth transistor is connected to the gate of the third transistor to receive the realignment signal. The delay chain includes a plurality of delay cells. An input of the delay chain is connected to the output of the pseudo pass-gate inverter. When the realignment signal is in a realignment state, the third transistor is turned off, the fourth transistor is turned on.

Abstract: A realignment ring-cell circuit is disclosed. The circuit includes a single-to-differential unit, an OR gate, an AND gate, a first P-type metal-oxide-semiconductor transistor, and a first N-type metal-oxide-semiconductor transistor. The single-to-differential unit has an input configured to receive a realignment signal, a first output for outputting a first differential output and a second output for outputting a second differential output. The first output for outputting is a first input to the OR gate. The second output for outputting is a first input to the AND gate. A gate of the P-type metal-oxide-semiconductor transistor is electrically connected to an output of the OR gate. A gate of the N-type metal-oxide-semiconductor transistor is electrically connected to an output of the AND gate.

Abstract: Disclosed herein is a latch circuit capable of preventing an output failure caused due to simultaneous transition of a control signal and an input signal. The latch circuit according to the present invention generates a separate control adjustment signal CTR using the control signal Control and the input signal In and uses the control adjustment signal CTR, instead of the control signal for a latch operation. Accordingly, when the control signal and the input signal transition at the same time, the control adjustment signal is processed not to transition during a transition interval of the input signal, thereby preventing a metastability problem that occurred in the existing latch circuit.

Abstract: Provided are a gate driving circuit and a display device including the same. The gate driving circuit according to an embodiment includes a shift register including a plurality of stages. An nth stage of the stages includes a latch control circuit including a first NMOS transistor connected to a QB node, a second NMOS transistor connected to a Q node, and a third NMOS transistor having a gate electrode to which a first clock is input and connected to the first and second NMOS transistors, where n is a positive integer. A latch is connected between the Q and QB nodes. A transmission gate is connected to the Q and QB nodes. In the gate driving circuit, output signals of a previous stage and a following stage are controlled so as to be synchronized with the first clock to suppress a glitch.

Abstract: A device measures the current in an inductive load using two separate current-measuring paths to detect the current in the inductive load. The inductive load is connected between first and second nodes, and the first node connected to a first voltage. The device includes first and second transistors cascaded together between the first node and a third node that is connected to a second voltage. First and second sense amplifiers measure the current in the inductive load. The first and second sense amplifiers are connected to at least one terminal of the first and second transistors. Two blocks sample and hold signals from the first and second sense amplifiers, which represent, respectively, the currents in the two separate current-measuring paths. The two currents are subtracted in a comparison node for generating an error signal that is compared with a predefined window and if outside the window a failure signal is generated.

Abstract: The present invention provides a scan-driving circuit used to perform a driving operation on cascaded scanning lines, which comprises a pull-up control module, a pull-up module, a pull-down module, a pull-down sustain module, a down-transmitting module and a bootstrap capacitor. The scan-driving circuit of the present invention enhances the voltage-level control capability of the Q point and raises the reliability of the scan-driving circuit, by disposing a first constant-high voltage and a second constant-high voltage.

Abstract: In a described example, an apparatus includes at least one latch coupled to a first positive supply voltage and to a first negative supply voltage, the latch having a first inverter and a second inverter coupled to one another back to back, to output a first voltage corresponding to a first latch state and a second voltage corresponding to a second latch state responsive to a first set signal and a first reset signal. An isolation circuit is coupled to a second positive supply voltage and to a second negative supply voltage and is coupled to receive a second set signal, and a second reset signal, the second positive supply voltage being floating with respect to the first positive supply voltage. The isolation circuit outputs the first set signal and the first reset signal and includes less than two pairs of drain extended metal oxide semiconductor (DEMOS) transistors.

Abstract: The present invention provides a gate drive circuit and a liquid crystal display device. The gate drive circuit includes multiple stages of gate drive units connected in series. An N-th stage gate drive unit includes a pull-up control module, a pull-up module, a first pull-down module, a pull-down control module, and a second pull-down module. The second pull-down module includes a first thin film transistor and a second thin film transistor.

Abstract: A flip-flop is provided that includes a sense-amplifier-based master latch clocked by a first edge of a delayed version of a clock signal. A slave latch includes a cross-coupled pair of logic gates for latching a data output signal responsive to a second edge of the clock signal.

Abstract: A circuit adapts to the occurrence of metastable states. The circuit inhibits passing of the metastable state to circuits that follow, by clock gating the output stage. In order to determine whether or not to gate the clock of the output stage, two detect circuits may be used. One circuit detects metastability and another circuit detects metastability resolved to a wrong logic level. The results from one or both detector circuits are used to gate the next clock cycle if needed, waiting for the metastable situation to be resolved.

Abstract: An apparatus includes a first circuit configured to receive one or more requests from a plurality of cores. Each of the one or more requests is to enter or to exit one of a plurality of power-down modes. The first circuit further selects one or more of the cores to enter or to exit the requested power-down mode or modes based on inrush current information associated with the power-down modes. A second circuit is configured to effect entering or exiting the requested power-down mode or modes in the selected one or more of the cores.

Abstract: A memory cell includes a first bidirectional resistive memory element (BRME), and a second BRME, a first storage node, and a second storage node. A resistive memory write to the cell includes placing the first BRME and the second BRME in complementary resistive states indicative of the value being written. During a subsequent restoration operation, the value as written in the first BRME and second BRME is written to the first storage node and the second storage node while a wordline connected to the memory cell is deasserted.

Abstract: An integrated circuit (IC) includes a metastability-hardened synchronization circuit. The metastability-hardened synchronization circuit includes a plurality of sampling circuits, and a multiplexer. The sampling circuits sample an input signal to generate a plurality of sampled signals. The multiplexer generates an output signal from the plurality of sampled signals.

Abstract: A technique to enable information sharing among agents within different cache coherency domains. In one embodiment, a graphics device may use one or more caches used by one or more processing cores to store or read information, which may be accessed by one or more processing cores in a manner that does not affect programming and coherency rules pertaining to the graphics device.

Abstract: A device is operated in a low power mode of operation. The device receives a differential signal that includes a first polarity signal and a second polarity signal. A slope of a first direction is detected in the differential signal and a slope of a second direction is detected in the differential signal. A wakeup of the device is caused in response to the detection of the first slope of the differential signal and the second slope of the differential signal.

Abstract: In accordance with an aspect of the invention, there is provided an SPI interface including a plurality of synchronizers configured to receive a plurality of SPI signals and an internal clock signal and synchronize the received SPI signals using the internal clock signal. The SPI interface also includes an SPI protocol handler configured to receive the synchronized SPI signals and the internal clock signal, and detect and evaluate signal transitions of at least one of the synchronized SPI signals according to an SPI protocol.

Abstract: In accordance with the present disclosure there is methods of extending an expected lifetime of an inverter comprising a non-volatile (NV) memory and a high endurance memory by obtaining one or more measurements of the inverter and storing the one or more measurements to a high endurance memory of the inverter. Once stored, it is determined if a server-copy trigger condition is met and if it is at least a portion of the high endurance memory is stored to NV memory of the inverter.

Abstract: A memory cell includes a first bidirectional resistive memory element (BRME), and a second BRME, a first storage node, and a second storage node. A resistive memory write to the cell includes placing the first BRME and the second BRME in complementary resistive states indicative of the value being written. During a subsequent restoration operation, the value as written in the first BRME and second BRME is written to the first storage node and the second storage node while a wordline connected to the memory cell is deasserted.

Abstract: A semiconductor memory apparatus may include an active control portion configured to generate a preliminary bank active signal and a single bank refresh signal in response to a command, a refresh control signal, and a bank active signal. The semiconductor memory apparatus may also include a signal combination portion configured to enable the bank active signal when either the preliminary bank active signal or the single bank refresh signal is enabled.

Abstract: Described is an apparatus which comprises: a first memory unit having an input and an output, wherein the first memory unit operates on a first power supply which is operable to be turned off; a second memory unit having an input coupled to the output of the first memory unit, and an output, wherein the second memory unit operates on a second power supply which is always on; and a control logic coupled to the first and second memory units, the control logic to provide one or more control signals to each of the first and second memory units.

Abstract: The circuit includes a first wiring for supplying a power supply potential to a signal processing circuit, a transistor for controlling electrical connection between the first wiring and a second wiring for supplying the a power supply potential, and a transistor for determining whether or not the first wiring is grounded. At least one of the two transistors is a transistor whose channel is formed in the oxide semiconductor layer. This makes it possible to reduce power consumption due to cutoff current of at least one of the two transistors.

Abstract: Techniques for resolving a metastable state in a synchronizer are described herein. In one embodiment, a circuit for resolving a metastable state in a synchronizer comprises a signal delay circuit coupled to a node of the synchronizer, wherein the signal delay circuit is configured to delay a data signal at the node to produce a delayed data signal, and a transmission circuit coupled to the signal delay circuit, wherein the transmission circuit is configured to couple the delayed data signal to the node after a delay from a first edge of a clock signal.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive reset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes low, CLKZ goes high, reset control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signal RET, the reset control signal REN and the control signals SS and SSN. The signals CKT, CLKZ, RET, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: A semiconductor device includes a buffer unit suitable for outputting a first signal of differential input signals as a positive signal, and a second signal of differential input signals as a negative signal in response to a setting signal, and a setting control unit suitable for generating the setting signal based on a level state of the positive signal and the negative signal in response to a reset signal.

Abstract: A semiconductor device includes a pipe latch suitable for sequentially latching data in response to a pipe input control signal and sequentially outputting data in response to a pipe output control signal, a pipe latch control unit suitable for generating the pipe input/output control signals in response to a command signal and latency information, and resetting the pipe input/output control signals in response to a pipe reset signal, and an error detection unit suitable for receiving the pipe input control signal and the pipe output control signal, detecting a latency error, and generating the pipe reset signal

Abstract: An integrated circuit and an operation method thereof are provided. The integrated circuit includes a voltage detecting unit, a central processing unit, a memory unit and a control unit. The voltage detecting unit detects a system voltage and correspondingly outputs a voltage state signal. The central processing unit has at least one register. When the system voltage is downed to a voltage level lower than or equal to a brown-out voltage and greater than a reset low voltage, the control unit stores values of the registers into the memory unit.

Abstract: A digital cell for performing a logic operation on a logic input to produce a logic output, includes an evaluation block and a sense-amplifier block, both configured to receive input signals representative of the logic input, and to detect when the logic input and/or input signals validly encode at least one bit. The digital cell is configured to alternate between an evaluate state and a reset state. Upon the digital cell being in the reset state and the detection, the digital cell is switched from the reset state to the evaluate state in which the evaluation block generates a difference in its output signals, and the sense-amplifier block amplifies the difference so that the output signals encode at least one valid bit. Upon the digital cell being in the evaluate state, the digital cell can be triggered to reset to the reset state.

Abstract: Adaptive scaling digital techniques attempt to place the system close to the timing failure so as to maximize energy efficiency. Rapid recovery from potential failures is usually by slowing the system clock and/or providing razor solutions (instruction replay.) These techniques compromise the throughput. This application presents a technique to provide local in-situ fault resilience based on dynamic slack borrowing. This technique is non-intrusive (needs no architecture modification) and has minimal impact on throughput.

Abstract: A semiconductor integrated circuit and a method operating the same are provided. The semiconductor integrated circuit includes a first clock network configured to divide a clock signal into first output clock signals with a high frequency, a second clock network configured to divide the clock signal into second output clock signals with a non-high frequency, a plurality of selection circuits configured to be connected between the first clock network and the second clock network, and configured to output one of the first output clock signals and the second output clock signals, according to a power mode, and a plurality of clock sinks configured to sink output clock signals respectively output from the selection circuits.

Abstract: A state retention power gated (SRPG) cell includes a retention circuit coupled to a power gated circuit. The retention circuit stores state information of the power gated circuit before a low power period is started. A gated power supply coupled to the power gated circuit and to a first end of a power supply switch supplies a gated supply voltage to the power gated circuit during a non-low power period. A local power supply coupled to the retention circuit and to a second end of the power supply switch is coupled to the gated power supply in the non-low power period, and a non-gated power supply is coupled to the local power supply via an isolation element to isolate the non-gated power supply from the local power supply during the non-low power period, and to couple the non-gated power supply to the local power supply during the low power period.

Abstract: An apparatus and method for testing is provided. An integrated circuit includes a comparison circuit that is arranged to trip based on a power supply signal reaching a trip point. The integrated circuit also includes an analog-to-digital converter that is arranged to convert the power supply signal into a digital signal. The integrated circuit also includes a storage component that stores a digital value associated with the digital signal, and provides the power supply value at an output pin of the integrated circuit. The integrated circuit includes a latch that is coupled between the analog-to-digital converter and the storage component. The latch is arranged to open when the comparison circuit trips, such that, when the comparison circuit trips, the storage component continues to store a digital value such that the digital value corresponds to the voltage associated with the power supply signal when the comparison circuit tripped.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive reset preset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low, preset control signal PRE is low, rest control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signals RET and RETN, the preset control signal PRE and the control signals SS and SSN. The signals CKT, CLKZ, RET, RETN, PRE, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signals RET and RETN determine when data is stored in the dual-port latch during retention mode.

Abstract: Systems and methods are provided for a data storage element. A data input is configured to receive input data to the data storage element. A latching element is configured to hold input data that is received from the data input. A pulse generator is configured to assert a pulse signal based on a clock signal, and a multiplexer is configured to select for output from the data storage element, responsively to the pulse signal, one of the input data that is received from the data input without passing through the latching element and the input data held in the latching element.