Abstract: A sampling switch circuit uses correlated level shifting. The sampling switch circuit includes: a sampling switch having a first terminal, a control terminal, and an output terminal, wherein the first terminal is connected to an input voltage node; a boosting circuit connected to first and second supply voltage nodes and coupled to the control terminal of the sampling switch; and a correlated level shifting buffer circuit. The correlated level shifting buffer circuit includes: an amplifier having first and second inputs and an output, wherein the first input is connected to the input voltage node, and the output and second input are coupled to the boosting circuit; and a level shifting capacitor coupled to the second input and output of the amplifier, to the boosting circuit, and to a level shifting voltage node.

Abstract: Described herein is a voltage compensated level-shifter with nearly constant duty cycle and matching rise and fall slopes of the output of the level-shifter, no meta-stability, and nearly constant propagation delay across power supply levels. The voltage compensated level-shifter comprises a first inverter to receive an input signal for level shifting from a first power supply level to a second power supply level, and to generate a first inverted signal, the first inverter operating on the first power supply level; a second inverter to receive the input signal and to generate a second inverted signal, the second inverter operating on the second power supply level; and a NOR logical gate to receive the first and second inverted signals and to generate an output signal, the NOR logical gate operating on the second power supply level, wherein the output signal is level shifted to the second power supply level.

Abstract: A drain or a source of a transistor which receives an input signal at a gate is connected to a back gate of the transistor. A voltage changing circuit portion changes voltage applied to the drain or the source in accordance with a change in potential level of the input signal so that a potential difference between the gate and the drain or the source is lower than or equal to breakdown voltage of the transistor.

Abstract: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

Abstract: A semiconductor integrated circuit includes a bypass circuit that forms a bypass path under a low voltage condition, and the bypass circuit includes first and second bypass MOS transistors respectively placed between drains of first and second PMOS transistors and a ground voltage terminal, each transistor having a gate to which a second power supply voltage is applied, and third and fourth bypass MOS transistors respectively placed between the first and second bypass MOS transistors and the ground voltage terminal, each transistor controlled to be ON and OFF in accordance with an input signal and a voltage condition.

Abstract: A level shifter circuit includes a first voltage conversion circuit and a second voltage conversion circuit. The first voltage conversion circuit receives an input signal having an amplitude ranging between a power supply potential (GND) and a power supply potential (VDDL), a power supply potential (VDDH) which is higher than the power supply potential (VDDL) is supplied. Further, a current limiting circuit is provided that limits a current supplied from a power supply line of the power supply potential (VDDH), and outputs a voltage signal with a larger amplitude than that of the input signal according to the input signal. The second voltage conversion circuit is supplied with the power supply potential (VDDH, and outputs an output signal with an amplitude ranging between the power supply potential GND and the power supply potential (VDDH).

Abstract: In one or more embodiments, circuitry is provided for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The capacitive coupling is provided by one or more capacitive structures having a breakdown voltage that is defined by way of the various components and their spacing. The capacitive structures each include three capacitive plates arranged to have two plates located in an upper layer and one plate located in a lower layer. A communication signal can be transmitted via the capacitive coupling created between the lower plate and each of the upper plates, respectively.

Abstract: An interface input has an input circuit adapted to receive input signal levels higher than a maximum signal level that a host circuitry's electronic components can reliably handle. The input circuit shifts the level of the input signal to a desired signal level. A keeper circuit is coupled to the input circuit and maintains trigger levels of the shifted signals consistent with the input signal level.

Abstract: In an amplitude conversion circuit that converts an input signal having a small amplitude into an output signal having a large amplitude, the input signal is supplied to a gate of a transistor that discharges an output terminal through a capacitance element. A charging/discharging circuit causes a gate voltage of the transistor to be substantially equal to a threshold voltage during an inactive period of the input signal.

Abstract: An output buffer circuit includes first and second output circuits, and those output terminals are coupled to each other. The first output circuit outputs a first signal having a voltage level of a first high potential power supply or a low potential power supply and includes a first output transistor at a high potential side. The second output circuit outputs a second signal having a voltage level of a second high potential power supply, which is lower than the first high potential power supply, or the low potential power supply and includes a second output transistor at a high potential side. A control circuit sets the gate and back gate of at least one of the first and second output transistor to the voltage level of the second high potential power supply when the first high potential power supply is deactivated and the second high potential power supply is activated.

Abstract: A level-shifter circuit may include a pair of inputs which receive a first and a second low-voltage phase signal having a first voltage dynamic with a first maximum value. The level-shifter circuit may also include a pair of outputs which supply a first high-voltage phase signal and a second high-voltage phase signal, level-shifted with respect to the low-voltage signals and having a second voltage dynamic with a second maximum value, higher than the first maximum value. The level-shifter circuit may further include transfer transistors coupled between one of a first reference terminal and a second reference terminal, which are set at one of a first reference voltage and a second reference voltage, and the first output or second output. Protection elements may be coupled to a respective transfer transistor to protect from overvoltages between at least one of the corresponding conduction terminals and control terminals.

Abstract: A level shifter for a microcontroller shifts an input voltage in a first power domain to an output voltage level consistent with a second power domain. The level shifter is enabled to shift the voltages when both power domains are operative.

Abstract: A circuit comprising a first input transistor having a drain, a source and a gate. A first diode connected transistor having a drain, a source and a gate, wherein the gate of the first diode connected transistor is coupled to the drain of the first diode connected transistor, and the drain of the first input transistor is coupled to the drain of the first diode connected transistor. A first load transistor having a drain, a source and a gate, wherein the drain of the first load transistor is coupled to the drain of the first diode connected transistor and the source of the first load transistor is coupled to the source of the first diode connected transistor.

Abstract: A semiconductor switch comprises a PNPN structure arranged to provide an SCR-like functionality, and a MOS gate structure, preferably integrated on a common substrate. The switch includes ohmic contacts for the MOS gate, and for the cathode and gate regions of the PNPN structure; the anode contact is intrinsic. A fixed voltage is typically applied to an external node. The MOS gate structure allows current to be conducted between the external node and the intrinsic anode when on, and the PNPN structure conducts the current from the anode to the cathode when an appropriate voltage is applied to the gate contact. Regenerative feedback keeps the switch on once it begins to conduct. The MOS gate inhibits the flow of current between the external node and anode—and thereby turns off the switch—when off. When on, the MOS gate's channel resistance serves as a ballast resistor.

Abstract: Apparatus and method for coupling high voltages for a semiconductor device via high voltage switches are disclosed. A high voltage switch includes a switch and a level shifter. The switch is defined between a voltage source and a voltage output. An enable line is coupled to a first transistor of the switch. The level shifter includes an input and an output. A characterization line is coupled to the input of the level shifter and the output of the level shifter is coupled to a second transistor of the switch. The level shifter further includes a power rail that is coupled to the switch between the first transistor and the second transistor.

Abstract: According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.

Abstract: A level shift circuit in which no adverse effect is produced on a delay time, regardless of the resistance values of resistors. The level shift circuit includes an operation detection circuit that outputs a nseten signal and a nresen signal in response to a state of output from first and second series circuits, a latch malfunction protection circuit connected to the operation detection circuit, a latch circuit connected through first to sixth resistors to first and second level shift output terminals of the first and second series circuits, first and second parasitic resistors, and third and fourth switching elements connected in parallel therewith, and fifth and sixth switching elements connected to a power source potential, a connection point of the first and second resistors or a connection point of the third and fourth resistors, and the operation detection circuit.

Abstract: A dual-voltage receiver, comprising a voltage detector. A high voltage Schmitt trigger coupled to the voltage detector. A low voltage Schmitt trigger coupled to the voltage detector. A combined level shifter coupled to the high voltage Schmitt trigger and the low voltage Schmitt trigger, wherein the high voltage Schmitt trigger is on and the low voltage Schmitt trigger is off when the voltage detector outputs a high voltage detect signal.

Abstract: A level shift circuit of the invention includes a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential, a latch circuit that operates on a power supply of a second potential which is higher than the first potential, and a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit. The latch circuit has one end thereof connected to an output end of the CMOS inverter circuit and outputs from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal. The power supply circuit functions to limit the power supply when the input pulse signal assumes at least the ground level.

Abstract: A level shift circuit includes an input port to which an input signal is input, a first signal amplifying unit configured to amplify the input signal input to the input port, a node at the first signal amplifying unit to output the amplified signal, a level shift input port to which a level shift voltage for controlling a DC level of the node is input, a first supply voltage configured to drive the first signal amplifying unit, and a level shift voltage generation circuit configured to generate the first supply voltage and the level shift voltage.

Abstract: Electronic circuitry compensates for variations or sags in electrical voltage within a thermal ink-jetting (TIJ) printing apparatus. Ground potential and other supply-related voltages are monitored and corresponding signals are provided. The signals are used, directly or by other circuitry, to affect the biasing of one or more transistors coupling TIJ resistors to supply voltage or ground nodes. Printing errors and related problems associated with voltage variations are reduced or eliminated accordingly.

Abstract: Semiconductor devices, systems, and methods are disclosed to facilitate power management. A method includes operating a first voltage range island of a semiconductor device within a first voltage range. The first voltage range includes a first midpoint. The first voltage range is provided in part by a voltage source that includes a tracking voltage regulator. The method also includes operating a second voltage range island of the semiconductor device within a second voltage range. The second voltage range includes a second midpoint. The first voltage range is different than the second voltage range.

Abstract: A level shifter, converting an input signal into an output signal for level shifting, including a leakage blocking circuit having cascaded P-channel transistors and one N-channel transistor. The P-channel transistor at a beginning stage provides a gate for receiving the input signal and a source coupled to a gate of the P-channel transistor at a secondary stage. At intermediate stages, each P-channel transistor provides a source coupled to a gate of the subsequently cascaded P-channel transistor. At a final stage, the P-channel transistor provides a source coupled to a voltage source and a drain coupled to an output terminal of the leakage blocking circuit for the outputting of the output signal. The N-channel transistor has a gate which is coupled to receive the input signal as well, a source coupled to a common voltage, and a drain coupled to the output terminal of the leakage blocking circuit.

Abstract: A level shift circuit does not affect delay time, regardless of the size of resistor resistance value. The level shift circuit includes first and second series circuits wherein first and second resistors and first and second switching elements are connected in series, rise detector circuits that compare the rise potentials of output signals of the first and second series circuits with a predetermined threshold value, and output first and second output signals, which are pulse outputs of a constant duration, when the threshold value is exceeded, and third and fourth switching elements connected in parallel to the first and second resistors respectively. The gate terminals of the third and fourth switching elements are connected to the rise detector circuits, and the third and fourth switching elements are turned on by the first and second output signals respectively.

Abstract: A level shifter shifts the level of an input signal from a second voltage domain to a first voltage domain. To accommodate different input signal levels (e.g., including sub-threshold input signal levels) that may arise due to changes in the supply voltage for the second voltage domain, current for a latch circuit of the level shifter is limited based on the supply voltage for the second voltage domain. In this way, a drive circuit of the level shifter that controls the latch circuit based on the input signal is able to initiate a change of state of the latch circuit over a wide range of input signal levels.

Abstract: A pulse filter and a bridge driver using the same, the pulse filter including: a first NMOS transistor, having a drain coupled to a first PMOS transistor for providing a reset signal, a gate coupled to a second reset signal, and a source coupled to a second set signal; a second NMOS transistor, having a drain coupled to a second PMOS transistor for providing a set signal, a gate coupled to the second set signal, and a source coupled to the second reset signal; a third NMOS transistor, having a drain coupled to the second set signal, a gate coupled to the second reset signal, and a source coupled to a second power line; and a fourth NMOS transistor, having a drain coupled to the second reset signal, a gate coupled to the second set signal, and a source coupled to the second power line.

Abstract: Methods and systems to implement voltage level shifting with interim-voltage-controlled contention-interruption. A voltage level shifter (VLS) may include voltage level shift circuitry to level shift an input logical state from an input voltage swing to an output voltage swing. The VLS may include contention circuitry, a contention interrupter, and an interrupt controller to generate a contention-interrupt control having an interim voltage swing. A lower limit of the interim voltage swing may correspond to a lower limit of the output voltage swing. An upper limit of the interim voltage swing may correspond to an upper limit of the input voltage swing. The VLS may be implemented to level shift true and complimentary logical states, such as with cascode voltage switch logic (CVSL).

Abstract: According to one embodiment, a semiconductor integrated circuit includes first and second level shift circuits. The first level shifter includes a plurality of transistors and is connected to a power source voltage supply node of a first power source system and to which a first signal of a second power source system and a level inversion signal of the first signal are input. The second level shifter includes a plurality of transistors and is connected to the power source voltage supply node of the first power source system and to which the level inversion signal of the first signal of the second power source system and an output signal of the first level shifter are input. The first and second level shifters have substantially the same circuit configuration and driving abilities of corresponding ones of the transistors in the first and second level shifters are substantially set equal.

Abstract: A level shifting multiplexer is disclosed. In one embodiment, a multiplexer is coupled to receive a first input signal from circuitry in a first power domain and a second input signal from circuitry in a second power domain. The multiplexer is configured to output a selected one of the first and second input signals to circuitry in the second power domain. The multiplexer also includes a level shifter circuit. When the first input signal is selected, the level shifter circuit may be enabled. When enabled, the level shifter circuit may level shift the first signal such that its voltage swing corresponds to that of the second voltage domain. The multiplexer may also include isolation circuitry configured to inhibit the level shifter.

Abstract: A dynamic level shifter is disclosed. In one embodiment, a dynamic level shifter circuit may receive an input signal referenced to a first voltage of a first power domain, and may output a corresponding signal referenced to a second voltage into a second power domain. The dynamic level shifter circuit may include an evaluation node that is precharged during a first phase (e.g., the low portion) of a clock signal. During the second phase (e.g., the high portion) of the clock signal, the evaluation node may be either pulled low or high, depending on the state of the input signal. A corresponding output signal, based on the evaluated level on the evaluation node, may be output into the second power domain.

Abstract: A level shifter circuit for shifting voltage level of an input signal includes a supply voltage generation circuit, an inverter, and a cross-coupled latch. The supply voltage generation circuit generates a low-voltage supply using a high-voltage supply. The low-voltage supply is used by the inverter to generate an inverted input signal. The input signal and the inverted input signal are provided to the cross-coupled latch, which generates a level shifted output signal.

Abstract: Apparatus and methods for adaptive level shifting are provided. In one embodiment, a method of level shifting in an adaptive level shifter (ALS) is provided. The technique includes charging a first capacitor and a second capacitor each to a voltage that is about equal to a difference between a common mode voltage of a differential input voltage signal and a reference voltage. The technique can further include inserting the first capacitor between a first input and a first output of the ALS and the second capacitor between the second input and a second output of the ALS. The technique can further include switching the first capacitor and the second capacitor such that the first capacitor is inserted between the second input and the second output and the second capacitor is inserted between the first input and the first output.

Abstract: A level shifter circuit includes a level shifter unit and a first controlling unit. The level shifter unit has an input node for receiving an input signal having a predetermined level, an output node for outputting an output signal having a desired level and a complementary output node for outputting a complementary output signal complementary to the output signal. The first controlling unit is coupled to the level shifter unit and has a first transistor coupled between the complementary output node and a first control node for receiving a first control signal and a second transistor coupled between the input node for receiving the input signal and a ground.

Abstract: A CMOS logic integrated circuit includes a level shifter and a CMOS logic circuit. The level shifter converts a signal of a first logic level to a signal of a second logic level. The signal of the first logic level changes between a first low potential and a first high potential higher than the first low potential. The signal of the second logic level changes between the first low potential and a second high potential higher than the first high potential. The CMOS logic circuit includes a first N-channel type MOSFET and a second N-channel type MOSFET. The second N-channel type MOSFET is connected in series with the first N-channel type MOSFET. A first signal of the first logic level is input into a gate of the first N-channel type MOSFET. A second signal of the second logic level has an inversion relationship with the first signal.

Abstract: A reference circuit for use with a charge redistribution analog to digital converter, having a capacitor array, the reference circuit comprising: an input for receiving a signal; an output for supplying a reference voltage to at least one capacitor of the charge redistribution capacitor array; a storage capacitor for storing the reference voltage; a voltage modification circuit for comparing the reference voltage stored on the storage capacitor with the reference signal, and based on the comparison to supply a correction so as to reduce a difference between the reference voltage and the reference signal, the correction being applied during a correction phase; and a first switch for selectively connecting the storage capacitor to the input during an acquisition phase.

Abstract: A level shift circuit including a level conversion unit that converts an input signal having a signal level of a first voltage into a signal having a signal level of a second voltage that is higher than the first voltage. The level conversion unit includes first and second MOS transistors of a first conductivity type and third and fourth MOS transistors of a second conductivity type, which differs from the first conductivity type and of which switching is controlled in accordance with the input signal. The third and fourth MOS transistors include drains supplied with the second voltage via the first and second MOS transistors, respectively. A control unit, when detecting a decrease in the first voltage, controls a body bias of the third and fourth MOS transistors to decrease a threshold voltage of the third and fourth MOS transistors.

Abstract: According to an embodiment, an interface circuit is provided with an output buffer which generates an output waveform on the basis of the ON/OFF operation of a transistor and a driver circuit which drives the transistor and is capable of independently changing a turn-ON speed and a turn-OFF speed of the transistor.

Abstract: A level shift circuit includes a first input terminal, a second input terminal, a first output terminal, a second output terminal, a latch-type level shifter, a first current source and a second current source. The first input terminal receives an input signal; the second input terminal receives an inverse signal of the input signal; the first output terminal outputs an output signal; and the second output terminal outputs an inverse signal of the output signal. The latch-type level shifter is connected to the first input terminal, the second input terminal, the first output terminal and the second output terminal. The first current source is connected between a first high voltage input terminal of the latch-type level shifter and a voltage source. The second current source is connected between a second high voltage input terminal of the latch-type level shifter and the voltage source.

Abstract: Dual path level shifter methods and devices are described. The described level shifter devices can comprise voltage-to-current and current-to-voltage converters.

Abstract: A voltage translator circuit (320) includes an input stage (322) adapted for receiving an input signal referenced to a first voltage supply (VDD core), a latch (326) adapted for connection to a second voltage supply (VDD33) and operative to at least temporarily store a logic state of the input signal, and a voltage clamp (324) coupled between the input stage (322) and the latch (326). The voltage clamp (322) is operative to set a maximum voltage across the latch (326) to a first prescribed level and to set a maximum voltage across the input stage to a second prescribed level. The voltage translator circuit (320) generates a first output signal (II) at a junction between the latch (326) and the voltage clamp (324). The voltage translator circuit generates a second output signal (15) at a junction between the voltage clamp (324) and the input stage (322).

Abstract: Some embodiments include apparatus and methods having a clock path with a combination of current-mode logic (CML) based and complementary metal-oxide semiconductor (CMOS) components.

Abstract: This document discusses, among other things, methods for controlling a Rail-to-Rail enabling signal, including providing a first signal of an input signal of a control circuit to a level switching circuit, performing, by the level switching circuit, enabling control according to a high level and a low level of the first signal, and outputting, by the level switching circuit, a disabling signal in case of a failure of a power supply coupled to the level switching circuit. The document also discusses a circuit for controlling a Rail-to-Rail enabling signal and a level switching circuit configured to output a disabling signal properly to provide an accurate enabling control signal for equipment operated under control of an enabling control in case of the failure of the power supply.

Abstract: Level-shifting devices and methods allow signals to be passed between input/output (I/O) ports. One such device comprises a first output driver that drives a first I/O port in response to a first control signal. A second output driver drives a second I/O port in response to a second control signal. A first comparator circuit, responsive to a first reference voltage and a voltage at the first I/O port, generates the second control signal. A limiter circuit limits driving of the second I/O port, by the second driver, to a limiting voltage that responsive to a the second I/O port over a first range of signaling voltages, and constrained to a set value over a second range. A voltage reference generating circuit generates a second reference voltage. A second comparator circuit generates the first control signal in response to the second reference voltage and the second I/O port.

Abstract: A level shifter includes an output stage transistor and a level controller. The level controller receives a selection signal and provides a reference voltage at a gate terminal of the output stage transistor based on the selection signal. The output stage transistor, on being enabled by the reference voltage, provides a first level shifted output based on a first output reference voltage.

Abstract: Circuitry includes a pre-amplifier having a differential output, where the differential output corresponds to a common mode voltage; a multiplexer including sets of transistors, each of which has a control input; a comparator including input terminals, a first terminal of the input terminals to receive a signal that is based on an output of the multiplexer, and a second terminal of the input terminals to receive a threshold voltage; a compensation circuit to produce a divided voltage that varies in accordance with variations in the common mode voltage; and an amplifier to receive a predefined voltage and to use the divided voltage to affect the predefined voltage to produce the threshold voltage for the comparator. Signals in the differential output of the pre-amplifier are applicable to corresponding control inputs in the sets of transistors.

Abstract: Disclosed is an integrated circuit (200) comprising a plurality of cores (110, 110), at least some of the cores being located in different power domains (VDD1, VDD2), each core being surrounded by a test wrapper (220) comprising a plurality of wrapper cells (128, 230), wherein each of said test wrappers are located in a single power domain (VDD3) and each plurality of wrapper cells comprises wrapper output cells (230) each arranged to output a signal from its associated core, each of said wrapper output cells comprising an output level shifter (232, 240) for shifting the voltage of said signal to the voltage of the single power domain (VDD3). A method for testing such an IC and standard library cells for designing such an IC are also disclosed.

Abstract: An input circuit includes an inverter, a first path control circuit and a second path control circuit. An input of the inverter is connected with a first node. A target inversion potential is higher than an inversion potential of the inverter. The first path control circuit electrically connects an input terminal and the first node when the input potential is higher than the target inversion potential, and blocks off an electrical connection between the input terminal and the first node when the input potential is lower than the target inversion potential. The second path control circuit electrically connects a ground terminal and the first node when the input potential is lower than a second inversion potential which is lower than the target inversion potential and blocks off the electrical connection between the ground terminal and the first node when the input potential is higher than the second inversion potential.

Abstract: An integrated circuit has a level shifter, a pull-circuit, and a voltage regulator. The level shifter and the pull-up circuit receive power from the same supply voltage. The voltage regulator changes the voltage level from the supply voltage to another voltage level used by the level shifter.

Abstract: A clock shifter circuit may receive a input clock in a first voltage domain and may generate a level-shifted output clock in a second voltage domain. The circuit may include a cross-coupled pair of transistor switches and a pair of capacitors. Each switch may have a drain coupled to one of the capacitors, a source coupled to a circuit supply voltage, and a gate coupled to the other capacitor. One capacitor may receive a true input clock version, while the other may receive a complement version. Each capacitor, in an alternating manner, may activate an opposing transistor switch to charge its capacitor during an active phase of its respective input clock. The circuit may generate the output clock from an output node connected between one of the transistor switches and its capacitor. The output clock may drive a load directly coupled to the output node.

Abstract: A floating gate driver includes a level shifter to transmit a set signal and a reset signal to a first output terminal and a second output terminal, respectively. The level shifter includes a first high-voltage transistor, a first current limiter and a first input transistor connected in series between the first output terminal and a ground terminal, and a second high-voltage transistor, a second current limiter and a second input transistor connected in series between the second output terminal and the ground terminal, and the first and second high-voltage transistors are remained on. With this arrangement, the level shifter can transmit signals from low side to high side under better safe operating area and has better noise immunity.