Abstract: The present invention provides a level translator circuit, a driving circuit for driving a high-voltage device and a corresponding method. The driving circuit for driving a high-voltage device comprises: a zener diode whose cathode is connected to a high-voltage power supply voltage and whose anode is connected to a ground potential of a low-voltage domain through a resistor; a high-voltage PMOS transistor whose gate is connected to an anode of the resistor, whose drain is connected to the ground potential of the low-voltage domain, and whose source is operable to supply a ground potential of a high-voltage domain; a level translator operable to convert a first signal in the low-voltage domain as received to a second signal in the high-voltage domain and output the second signal; and a low-voltage driving circuit operable to receive the second signal and adapt the second signal as a third signal which can drive the high-voltage device.

Abstract: A buffer circuit is provided which is insensitive to a duty distortion regardless of the change of operation environment. The buffer circuit includes a current mode logic buffer and a differential-to-single-ended converter. The differential-to-single-ended converter receives first and second differential output signals to generate a single ended output signal and is configured so that an internal control node of the differential-to-single-ended converter is controlled in a negative feedback method to maintain a constant duty ratio of the single ended output signal regardless of the change of operation environment. According to some embodiments, a duty distortion of the single ended output signal due to the change of operation environment such as a process, a voltage, a temperature, etc. is reduced or minimized and thereby performance of the buffer circuit is improved and operation reliability is improved.

Abstract: According to one embodiment, a first CMOS inverter receives an input signal corresponding to a first power supply voltage, and is driven by a second power supply voltage which is smaller than the first power supply voltage; a second CMOS inverter is connected to a rear stage of the first CMOS inverter, and is driven by the second power supply voltage; a first driving adjustment circuit adjusts a current driving force of a low level output of the first CMOS inverter; and a second driving adjustment circuit adjusts a current driving force of a low level output of the second CMOS inverter.

Abstract: The present invention provides a level shifter. In an embodiment, the level shifter includes first to sixth transistors. The first and second transistors have common control nodes coupled to a first bias voltage, receive a pair of input signals and respectively provide a first output node and a second output node. The fifth and sixth transistors have common control nodes coupled to a second bias voltage to form a current mirror. The third transistor is coupled between the first and the fifth transistors and has a control node coupled to the second output node. The fourth transistor is couple between the second and the sixth transistors and has a control node coupled to the first output node.

Abstract: In accordance with an embodiment, a level shifter circuit includes a reconfigurable level shifting core coupled to a first node and a second node. The reconfigurable level shifting core is configured as a current mirror in a first mode, and as a cross-coupled device in a second mode. In the first mode, the current mirror mirrors a current at the first node to the second node, and in the second mode, the cross-coupled device produces a current at the second node in response to a voltage at the first node, and a current at the first node in response to a voltage at the second node.

Abstract: System and method for controlling one or more switches. The system includes a first converting circuit, a second converting circuit, and a signal processing component. The first converting circuit is configured to convert a first current and generate a first converted voltage signal based on at least information associated with the first current. The second converting circuit is configured to convert a second current and generate a second converted voltage signal based on at least information associated with the second current. The signal processing component is configured to receive the first converted voltage signal and the second converted voltage signal and generate an output signal based on at least information associated with the first converted voltage signal and the second converted voltage signal.

Abstract: A method and apparatus for translating signals between different components located in different power boundaries in a mixed voltage system. A level shifter system includes a first level shifter circuit connected to a first voltage source. A second level shifter circuit connects to a second voltage source. An intermediate level shifter circuit has an input that connects to the output of the first level shifter circuit. The output of the intermediate level shifter circuit connects to the input of the second level shifter circuit. The intermediate level shifter circuit uses an intermediate voltage source having an intermediate voltage about midway between the first voltage of the first voltage source and the second voltage of the second voltage source.

Abstract: According to one embodiment, a level shift circuit includes a plurality of level shift units which are connected to each other and in which the delay time of the rising edge of an output voltage is different from the delay time of the falling edge of the output voltage. The delay time of the rising edge of the output voltage from the previous level shift unit is compensated by the delay time of the falling edge of the output voltage from the next level shift unit, and the delay time of the falling edge of the output voltage from the previous level shift unit is compensated by the delay time of the rising edge of the output voltage from the next level shift unit.

Abstract: An over-driver, voltage level shift circuit for use with multiple voltage integrated circuits. The voltage level shift circuit includes a first pair of PMOS transistors, a second pair PMOS transistors and a third pair of PMOS transistors using a high supply voltage source VDDH and a low supply voltage source to voltage level shift input signals having a first voltage operating range to an output signal having a second voltage operating range higher then the first voltage operating range. Some embodiments include a fourth set of transistors and a fifth set of transistors to receive a medium supply voltage source VDDM between the high supply voltage source VDDH and a low supply voltage source and another set of input signals operating a voltage operating range different than the first operating range. The voltage level shift circuit selectably switches between a plurality of different voltage operating ranges for the second voltage operating range.

Abstract: An input buffer is provided. The input buffer receives an input signal through an input terminal and outputs an output signal at an output terminal. The input circuit includes an input circuit and a level shifting circuit. The input circuit receives the input signal and generates a buffer signal according to the input signal. The level shifting circuit receives a first supply voltage and the buffer signal and generates the output signal at the output terminal according to the buffer signal and the first supply voltage. The first high level of the input signal is higher than a voltage level of the first supply voltage. When the input signal is at a first high level, the input circuit generates the buffer signal whose voltage level is between the first high level of the input signal and the voltage level of the first supply voltage.

Abstract: Provided is a level shift circuit which includes: a first level shift module; a first signal input terminal for providing a first input signal for the first level shift module; a first signal output terminal for providing output from the first level shift module; a second level shift module; a second signal input terminal for providing a second input signal for the second level shift module; a second signal output terminal for providing output from the second level shift module; a drive module connected to the first signal output terminal and the second signal output terminal; and a drive signal output terminal from the drive module. The level shift circuit of the present invention can be applicable for the requirements of BCD process and prevent damages to the high-voltage device due to the excessively high gate voltage.

Abstract: A single supply level shifter circuit for shifting the voltage level of an input voltage includes a voltage translation stage and a driver stage. The voltage translation stage receives the input voltage and a voltage supply and generates a first voltage. When a magnitude of the input voltage is LOW, the first voltage is LOW. The first voltage is provided to the driver stage, which inverts the first voltage to generate an output voltage that is at a voltage supply (Vdd) level, thereby level shifting the input voltage.

Abstract: A dual-voltage receiver, comprising a voltage detector. A high voltage Schmitt trigger coupled to the voltage detector. A low voltage Schmitt trigger coupled to the voltage detector. A combined level shifter coupled to the high voltage Schmitt trigger and the low voltage Schmitt trigger, wherein the high voltage Schmitt trigger is on and the low voltage Schmitt trigger is off when the voltage detector outputs a high voltage detect signal.

Abstract: An interface circuit includes a receiver, a first terminal resistor, a second terminal resistor, a switch circuit and a switch control circuit. The receiver has a first channel and a second channel. The first channel receives a first channel voltage, and the second channel receives a second channel voltage. According to the first channel voltage and the second channel voltage, the switch control circuit controls the switch circuit to discharge a common mode capacitor before the first terminal resistor or the second terminal resistor couple to the common mode capacitor.

Abstract: Provided is a configuration of a driver integrated circuit that can output a voltage exceeding the withstand voltage of a process, and that satisfies required apparatus performance (high speed and high voltage). A differential input circuit, a level shift circuit, and an output circuit are manufactured by the same process and divided and disposed on three or more chips with different substrate potentials (sub-potentials). By setting different applied voltages to the substrates of the chips, an output voltage greater than the process withstand voltage can be provided (see FIG. 2).

Abstract: Provided is a power amplifier using a differential structure. The power amplifier includes: first and second transistors whose first terminals are each connected to a first power supply source supplying a first voltage and into which signals having the same size and opposite polarities are input; third and fourth transistors whose first terminals are respectively connected to the first terminals of the first and second transistors; and a fifth transistor whose first terminal is connected to second terminals of the third and fourth transistors and controlling oscillation of the third or fourth transistor.

Abstract: A system, method, and computer program product are provided for performing level shifting. In use, level shifting is performed utilizing a native transistor, where the level shifting is performed utilizing a feedback based topology.

Abstract: A device and method for dc isolation and level shifting includes a driver circuit powered by a first voltage range, a capacitor connected to the driver circuit, and a latching circuit connected to the capacitor. The latching circuit is powered by a second voltage range and is configured to restore and/or minimize charge loss of the capacitor during a voltage transition at the capacitor. A device and method for analog isolation and measurement configured to measure an analog voltage at a second potential without requiring analog circuits at the second potential.

Abstract: According to one embodiment, in a level shift switch, a first input signal is inputted into a first input-output terminal, a first output signal is outputted from a second input-output terminal, a second input signal is inputted into the second input-output terminal, a second output signal is outputted from the first input-output terminal. The level shift switch includes a transmission circuit, a first MOSFET, a second MOSFET, and a first one-shot pulse generation circuit.

Abstract: A level shift circuit is for converting a level of input signal which has a logic level at a first input electric potential and a logic level at a second input electric potential and generating an output signal which a logic level at a first output electric potential corresponding to the first input electric potential and logic level at a second output electric potential corresponding to the second input electric potential.

Abstract: A sampling switch circuit uses correlated level shifting. The sampling switch circuit includes: a sampling switch having a first terminal, a control terminal, and an output terminal, wherein the first terminal is connected to an input voltage node; a boosting circuit connected to first and second supply voltage nodes and coupled to the control terminal of the sampling switch; and a correlated level shifting buffer circuit. The correlated level shifting buffer circuit includes: an amplifier having first and second inputs and an output, wherein the first input is connected to the input voltage node, and the output and second input are coupled to the boosting circuit; and a level shifting capacitor coupled to the second input and output of the amplifier, to the boosting circuit, and to a level shifting voltage node.

Abstract: A level shifter and a method of operating a level shifter are provided. The level shifter includes a first-level shifter unit configured to convert an external input signal into a signal in a preset first-voltage range using a plurality of transistors and output the converted signal and a second-level shifter unit configured to convert the signal output from the first-level shifter unit into a signal in a preset second-voltage range using a plurality of transistors and output the converted signal.

Abstract: A level shifter and method are disclosed. In one embodiment, the level shifter includes a DC biasing component connected with both an AC coupling component and a high voltage output amplifier. The AC coupling component receives an input signal from a low voltage domain and output a first voltage signal. The DC biasing component is configured to bias the first voltage signal using a bias voltage based on a previous output signal in a high voltage domain. The high voltage output amplifier is configured to amplify the DC biased voltage signal in the high voltage domain and provide an output signal in the high voltage domain.

Abstract: A level shifter includes a signal receiving module, including at least one signal receiving end for receiving at least one input signal and being conducted or non-conducted according to the input signal; a level adjusting module, configured to generate the adjusted output signal according to the input signal, wherein the level adjusting module includes a first connection end and a second connection end, the second connection end is coupled to the signal receiving module; and a switch module, including a first end coupling to the first connection end and a second end coupling to the second connection end. If the switch module is conducted, an current path is formed between the first connection end, the second connection end and the signal receiving module through the switch module. If the switch module is not conducted, current is blocked from flowing from the first connection end to the second connection end.

Abstract: A level shifting circuit includes a first circuit, a second circuit and an output voltage controlling circuit. The first circuit is coupled to an input node, an output node and a first supply voltage node and configured to pull an output voltage at the output node toward the first supply voltage in accordance with an input voltage applied to the input node. The second circuit is coupled to the first circuit, the output node and the second supply voltage node and configured to pull the output voltage toward the second supply voltage in accordance with the input voltage from the first circuit. The output voltage controlling circuit is coupled to the output node and configured to control the output voltage within a range narrower than a range from the first voltage to the second voltage.

Abstract: A maximum power point tracking controller includes an input port for electrically coupling to an electric power source, an output port for electrically coupling to a load, a control switching device, and a control subsystem. The control switching device is adapted to repeatedly switch between its conductive and non-conductive states to transfer power from the input port to the output port. The control subsystem is adapted to control switching of the control switching device to regulate a voltage across the input port, based at least in part on a signal representing current flowing out of the output port, to maximize a signal representing power out of the output port.

Abstract: A method of making a level shifter includes coupling a driver stage between an input end and an output end, the driver stage comprising a first transistor and a second transistor. An inverter having an input is coupled with the input end. A third transistor having a gate end is coupled with an output of the inverter, the third transistor having a terminal coupled to a pumped voltage (VPP). Additionally, the method includes coupling a fourth transistor with the output end, the fourth transistor having a terminal coupled to the pumped voltage. A fifth transistor is coupled with the input end, the fifth transistor having a terminal coupled to the third and fourth transistors. A sixth transistor is coupled with the input end, the sixth transistor having a terminal.

Abstract: A voltage switch circuit uses PMOS transistors to withstand high voltage stress. Consequently, the NMOS transistors are not subject to high voltage stress. The lightly-doped PMOS transistors are compatible with a logic circuit manufacturing process. Consequently, the voltage switch circuit may be produced by a logic circuit manufacturing process.

Abstract: The described apparatus and methods may include a first shifting stage configured to receive a signal having an upper power rail at a first voltage level and a lower power rail at a second voltage level, the first shifting stage configured to shift the upper power rail from the first voltage level to a third voltage level while maintaining the lower power rail at the second voltage level. The apparatus and methods may also include a second shifting stage coupled to the first shifting stage and configured to shift the lower power rail from the second voltage level to a fourth voltage level while maintaining the upper power rail at the third voltage level, the second shifting stage further configured to transmit the signal having the upper power rail at the third voltage level and the lower power rail at the fourth voltage level.

Abstract: An interface within an electronic device coupled to a serial communications bus having one or more serial communications lines generates a reference voltage source within the electronic device from the logic signals carried on the serial communications line(s). The generated reference voltage source is used within the electronic device to decode the logic signals received from the serial communications line(s).

Abstract: A circuit is provided that includes a parasitic power circuit that powers a parasitic circuit. The parasitic power circuit derives a supply voltage from an external AC or other signal suitable for use as a communications signal. A PMOS transistor or transistors is utilized to enable a supply voltage capacitor to charge substantially to the same voltage as the channel voltage of the communications signal.

Abstract: A switched-mode level-shifter shifts a differential voltage superimposed on a common-mode voltage. In the level shifter, a common-mode inductive reactor has at least two windings, and at least one of the differential voltage and the common-mode voltage are applied to at least one of the windings of the reactor. A switch charges the inductive reactor when caused to be in a first state, where the inductive reactor when charged experiences a change of flux according to the applied voltage. The switch also actuates a reset of the charged inductive reactor when caused to be in a second state, where the inductive reactor when reset reverses the change of flux experienced thereby. A source of a chopping signal is provided to alternately drive the switch between the first and second states, where each of the first and second states is one of in and out of conduction.

Abstract: A system, method, and computer program product are provided for performing level shifting. In use, level shifting is performed utilizing a native transistor, where the level shifting is performed utilizing a feedback based topology.

Abstract: A threshold voltage detection apparatus comprises a voltage level up-shifter and a voltage level down-shifter. The threshold voltage detection apparatus is placed at a circuit fabricated in a low voltage semiconductor process. The threshold voltage detection apparatus receives an input signal having a wide range and generates output signals comprising the logic of the input signal, but having a voltage range suitable for the low voltage circuit. The threshold voltage detection apparatus ensures that the low voltage circuit operates in a range to which the low voltage semiconductor process is specified.

Abstract: A receiving circuit for a core circuit is provided and includes a first receiving-path unit. The first receiving-path unit is capable of receiving an input signal and outputting an output signal to the core circuit according to the input signal. The first receiving-path unit includes an input buffer which is capable of operating in a core power domain of the core circuit and receiving a first clamped signal. When a level of the input signal is substantially equal to or lower than a first predetermined voltage level, the input signal is passed to the input buffer to serve as the first clamped signal, and the input buffer is capable of outputting the output signal in the core power domain according to the first clamped signal. When the level of the input signal is higher than the first predetermined voltage level, the input signal is not passed to the input buffer.

Abstract: A level shifter and an associated booster driving circuit are provided. The level shifter includes an input stage and an output stage. The input stage includes an input switch, which receives an input signal and is selectively turned on according to the input signal. The output stage outputs a gate driving signal. The gate driving signal is at a low logic level when the input switch is turned on, and is at a high logic level when the input switch is turned off. The logic level of the input signal is substantially the same as the logic level of the gate driving signal.

Abstract: The present invention provides an apparatus and method for a frequency adaptive level shifter circuit. The frequency adaptive level shifter circuit includes a first inverter, a second inverter coupled to the output of the first inverter, a capacitor coupled to the output of the second inverter, and a resistor coupled to the output of the capacitor. The frequency adaptive level shifter circuit further includes a transistor coupled to the output of the resistor, wherein the transistor has a gate connected to a reference voltage, a third inverter coupled to the output of the capacitor, and a fourth inverter coupled to the output of the third inverter and the transistor and outputting the signal.

Abstract: A level shifter includes a latch supplied at a first voltage, and first and second series connections of first and second switch elements and first and second biased elements in series with first and second branches of the latch respectively. Third and fourth switch elements are connected in parallel with the first and second series connections respectively. The input signal, at a voltage different from the first voltage, activates the third or fourth switch element during a transition period after a change of state of the input signal one way or the other to change the state of the latch, and deactivates the third or fourth switch element and activates the first or second switch element to maintain the state of the latch during a stabilization period following the transition period. The transition periods are shortened, reducing current consumption and transfer delay times.

Abstract: A high-frequency semiconductor switch includes a serial-parallel conversion circuit, a power supply circuit, and a drive circuit. In the serial-parallel conversion circuit, a parallel data signal is formed from a serial data signal input thereto. In the power supply circuit, a first positive voltage, a second positive voltage, and a negative voltage are formed from a high-potential power source supplied thereto. The drive circuit is supplied with the first positive voltage, the second positive voltage, and the negative voltage, and includes an inverter to which the parallel data signal is input and a differential type of level shifter to which the parallel data signal and the output signal of the inverter is provided. The drive circuit outputs the second positive voltage as a high level signal, and the negative voltage as a low level signal, to a switching circuit, and the switching circuit performs selective switching based thereon.

Abstract: A level shifter includes a resistor R1 connected to a power source, a MOSFET MN3 having a drain connected to the resistor R1 and a grounded source, a resistor R2 having the same resistance of the resistor R1 and connected to the power source, a MOSFET MN4 having a drain to the resistor R2 and a grounded source, a pulse generator 10 controlling ON/OFF of the MOSFETs MN3 and MN4 according to an input signal, a control part generating a set signal when the MOSFET MN3 is ON and a reset signal when the MOSFET MN4 is ON, a flip-flop that providing, according to the set and reset signals, an output signal level-shifted of the input signal to operate a switching element Q1, and a switching operation control part detecting when reference potential decreases to negative and stopping the switching element Q1.

Abstract: A level-up shifter circuit is suitable for high speed and low power applications. The circuit dissipates almost no static power, or leakage current, compared to conventional designs and can preserve the signal's duty cycle even at high data rates. This circuit can be used with a wide range of power supplies while maintaining operational integrity.

Abstract: A line driver circuit for a High Definition Multimedia Interface (HDMI) transmitter is disclosed. The line driver circuit includes a pre-driver circuit having a pair of pre-driver differential inputs and a pair of pre-driver differential outputs. A driver circuit having a pair of driver differential inputs and a pair of driver differential outputs is also included. Each of the pair of pre-driver differential outputs is coupled to a respective one of the pair of driver differential inputs. Each of the pair of driver differential outputs is coupled to a respective one of a pair of output terminals. The pre-driver further includes a pair of pre-driver cascode transistors. Each of the pre-driver cascode transistors is arranged between one of the pre-driver differential outputs and a respective one of the output terminals and wherein the driver circuit and the pre-driver circuit are operable to receive a current supplied by a HDMI receiver coupled to the pair of output terminals.

Abstract: Provided herein is a voltage level shifter, an apparatus including a voltage level shifter and a method of converting voltages between input and output power domains. In one embodiment, the voltage level shifter includes: (1) an input circuit configured to receive a data signal from an input power domain and a power down signal from a output power domain and (2) a transition circuit coupled to the input circuit and configured to receive the data signal and an inverted signal of the power down signal, wherein the input circuit and the transition circuit are both configured to connect to a supply voltage of the output power domain as a power source.

Abstract: Level shifting circuitry is provided for generating an output signal in response to an input signal. The level shifting circuitry includes a pulldown path for pulling the output signal to a lower output voltage level in response to a first transition of the input signal and a pullup path for pulling the output signal to a higher output voltage level in response to a second transition of the input signal. Pullup control circuitry places the pullup path in a non-conductive state in response to the output signal being pulled to the higher output voltage level. A keeper path keeps the output signal at the higher output voltage level while the pullup path is non-conductive until the pulldown path pulls the output signal low. A maximum drive current of the pulldown path is greater than a maximum drive current of the keeper path.

Abstract: Apparatus and methods level shift a direct current (DC) component of a voltage rail signal from a first DC level to a second DC level such that voltage rail noise can be determined. The actual voltage rail noise can be compared to an expected amount of noise for analysis and validation of simulation models. Such assessment can be used to validate simulation models used to refine a design of an integrated circuit or as part of built-in self test.

Abstract: An electronic device comprising a level shifter and a method. The level shifter includes an input adapted to receive an input signal switching between a low input voltage level and a high input voltage level and a first switch and a second switch coupled in series between a low output voltage supply and a high output voltage supply. An output is coupled to an interconnection node between the first and the second switch and is adapted to be coupled to a load. The first and second switches are controlled by the input signal. The level shifter further includes a third switch which is coupled between the interconnection node and an auxiliary voltage supply which has a voltage level between the low output voltage level and the high output voltage level.

Abstract: In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided.

Abstract: Variable attenuators and methods of their operation are provided. A variable attenuator includes first and second variable resistance circuits and multiple additional resistors. The first variable resistance circuit has a plurality of current paths coupled in parallel between input and output terminals. A first current path includes two first resistors coupled in series between the input and output terminals, and a switch, which has a channel coupled across one of the two first resistors. The multiple additional resistors include second and third resistors. The second resistor is coupled between the input terminal and an intermediate node. The third resistor is coupled between the output terminal and the intermediate node. The second variable resistance circuit is coupled between the intermediate node and a voltage reference terminal. The level of attenuation provided by the attenuator is controlled by a switch control circuit based on a digital input.

Abstract: A high speed level shifter is provided for converting a low input voltage into a wide-range high output voltage. By utilizing two switching units to improve the latching speed of the latching unit of the level shifter, the duty cycle of the input signal is nearly equal to the duty cycle of the output signal.

Abstract: A wide range level shift system receives an input signal with a first voltage level and a second voltage level. The wide range level shift system transforms the input signal to an output signal with a third voltage level and a fourth voltage level, wherein the first voltage level is smaller than the second voltage level, the second voltage level is smaller than the third voltage level, and the fourth voltage level is smaller than the first voltage level. The wide range level shift system reduces the number of transistors required, the layout area of the transistors, and the power consumption.