Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Abstract: A multiple power domain circuit includes a trigger circuit, a high threshold voltage circuit electrically connected to an output terminal of the trigger circuit, and a low threshold voltage circuit electrically connected to the output terminal of the trigger circuit and an output terminal of the high threshold voltage circuit. The low threshold voltage circuit comprises a pulse generator electrically connected to the output terminal of the trigger circuit, and an inverter electrically connected to an output terminal of the pulse generator, and the output terminal of the high threshold voltage circuit.

Abstract: A level shifter includes a signal receiving module, including at least one signal receiving end for receiving at least one input signal and being conducted or non-conducted according to the input signal; a level adjusting module, configured to generate the adjusted output signal according to the input signal, wherein the level adjusting module includes a first connection end and a second connection end, the second connection end is coupled to the signal receiving module; and a switch module, including a first end coupling to the first connection end and a second end coupling to the second connection end. If the switch module is conducted, an current path is formed between the first connection end, the second connection end and the signal receiving module through the switch module. If the switch module is not conducted, current is blocked from flowing from the first connection end to the second connection end.

Abstract: A multi-level shifter includes a first branch having first and second transistors coupled between a higher voltage terminal and a lower voltage terminal. The multi-level shifter comprises a second branch, in parallel with the first branch, having: a third transistor, coupled between said higher voltage reference terminal and an output node, a fourth switching transistor coupled between said output node and said lower voltage terminal. Said third and fourth transistors have respective control terminals controlled by drain terminals of said first and second transistors, respectively. The shifter includes a bidirectional battery coupled between said drain terminals of said first and second transistors to supply first and second voltages having the same magnitude and different polarities. Said fourth transistor is controlled according to the first voltage when said first transistor is turned on and said third transistor is controlled according to the second voltage when said second transistor is turned on.

Abstract: An I/O transceiver includes a driver with a feedback circuit having a mode select signal input, a serial data signal input, and a driver output signal input. The feedback circuit can provide a feedback control signal that is coupled to a pre-driver circuit. The pre-driver circuit can modify a data signal in response to the feedback control signal and the data signal. A driver circuit is coupled to the pre-driver circuit and can provide a driver output signal responsive to the modified data signal. A receiver can be coupled to the driver to receive the driver output signal. The receiver includes a level shifting circuit that shifts the received signal to a voltage level determined by a selected signaling interface.

Abstract: According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.

Abstract: Semiconductor devices, systems, and methods are disclosed to facilitate power management. A method includes operating a first voltage range island of a semiconductor device within a first voltage range. The first voltage range includes a first midpoint. The first voltage range is provided in part by a voltage source that includes a tracking voltage regulator. The method also includes operating a second voltage range island of the semiconductor device within a second voltage range. The second voltage range includes a second midpoint. The first voltage range is different than the second voltage range.

Abstract: In accordance with an embodiment, a level shifter circuit includes a reconfigurable level shifting core coupled to a first node and a second node. The reconfigurable level shifting core is configured as a current mirror in a first mode, and as a cross-coupled device in a second mode. In the first mode, the current mirror mirrors a current at the first node to the second node, and in the second mode, the cross-coupled device produces a current at the second node in response to a voltage at the first node, and a current at the first node in response to a voltage at the second node.

Abstract: An over-driver, voltage level shift circuit for use with multiple voltage integrated circuits. The voltage level shift circuit includes a first pair of PMOS transistors, a second pair PMOS transistors and a third pair of PMOS transistors using a high supply voltage source VDDH and a low supply voltage source to voltage level shift input signals having a first voltage operating range to an output signal having a second voltage operating range higher then the first voltage operating range. Some embodiments include a fourth set of transistors and a fifth set of transistors to receive a medium supply voltage source VDDM between the high supply voltage source VDDH and a low supply voltage source and another set of input signals operating a voltage operating range different than the first operating range. The voltage level shift circuit selectably switches between a plurality of different voltage operating ranges for the second voltage operating range.

Abstract: Apparatuses and methods, such as those for shifting a voltage level are disclosed. An example apparatus includes a level shifter configured to provide output signals based on a logical value of an input signal, where the level shifter is precharged to a precharge voltage prior to providing the output signals. An example method includes precharging an output node of a level shifter to a precharge voltage responsive to a precharge signal via a precharge circuit. A transition of the input signal from a first logical value to a second logical value is received at the level shifter and an output signal is provided at the output node based on the second logical value of the input signal.

Abstract: A level shifter converting a binary signal having a first potential and a second potential into a signal having the first potential and a third potential, and a signal processing circuit using the level shifter are provided. The first potential is higher than the second potential. The second potential is higher than the third potential. The potential difference between the first potential and the third potential may be more than or equal to 3 V and less than 4 V. The level shifter includes a current control circuit which generates a second signal for operating an amplifier circuit for a certain period in accordance with the potential change of the first signal which is input to the amplifier circuit. The output of level shifter is input to a gate of an N-channel transistor whose threshold voltage is lower than 0 V.

Abstract: A negative level shifter includes a voltage selection unit and at least one voltage level conversion unit. The voltage selection unit may apply a first voltage to a first node and a second voltage to a second node if the control signal CON is the first value and apply a third voltage to the first node and a fourth voltage to the second node if the control signal CON is the second value. The at least one voltage level conversion unit may be connected to the first node and the second node and convert a voltage level of an input signal by using a voltage of the first node and a voltage of the second node.

Abstract: A signal receiver includes first and second bias circuits that receive an input signal and convert the input signal to respective first and second bias signals. The signal receiver also includes a first inverter comprising a PMOS device and an NMOS device, each device has a source, a drain, and a gate. When the voltage magnitude of the first bias signal is smaller than that of the input signal, the gate of the PMOS device is coupled to the first bias signal and the gate of the NMOS device is coupled to the input signal. When the voltage magnitude of the first bias signal is greater than that of the input signal, the gate of the NMOS device is coupled to the first bias signal and the gate of the PMOS device is coupled to the input signal.

Abstract: A level shifting circuit includes a current mirror that generates a first bias current and a second bias current (proportional to the first bias current with a first ratio). A first level shifter is coupled between a first input node (receiving a first input signal) and a first output node coupled to an input of the current mirror. The first level shifter applies a first voltage variation to the first input signal in response to the first bias current. A second level is coupled between a second input node (receiving a second input signal) and a second output node coupled to an output of the current mirror. The second level shifter applies a second voltage variation (associated with the first voltage variation) to the second input signal in response to the second bias current.

Abstract: A circuit includes a first capacitive device and a first latch. The first capacitive device includes a first end configured to receive a first input signal and a second end coupled with the first latch. The first latch includes a first transistor and a second transistor that are of a first type. A first terminal of the first transistor and a first terminal of the second transistor are each configured to receive a first voltage value. A second terminal of the first transistor is coupled with a third terminal of the second transistor. A third terminal of the first transistor is coupled with a second terminal of the second transistor and with the second end of the capacitive device, and is configured to provide an output voltage for the first latch.

Abstract: A semiconductor device includes: a DLL circuit that generates an internal clock signal based on an external clock signal; a clock dividing circuit that generates two complementary internal clock signals having different phases based on the internal clock signal; and a multiplexer that outputs two internal data signals in synchronization with the two clock signals based on internal data signals, respectively. An internal power supply voltage supplied to the clock dividing circuit and an internal power supply voltage supplied to the multiplexer are generated by respective different power supply circuits and are separated from each other in the semiconductor device. This prevents interaction among noises.

Abstract: A switching circuit includes a first well and a second well formed in a semiconductor substrate; a first transistor being connected with a first node at one end, and the first transistor being formed in the first well; a second transistor being connected with another end of the first node at one end, and connected with a second node at another end, and the second transistor being formed in the second well; and a potential control circuit that connects the second well with the first node during a predetermined period including a period for the first transistor and the second transistor to transition from off to on in a state where potential of the second node is lower than potential of the first node, and connects the second well with the second node after the predetermined period.

Abstract: Aspects of the invention can include a pulse generating means that outputs a set signal and reset signal for driving the high potential side switching element is such that, while either one of the set signal or reset signal is in an on-state as a main pulse signal for putting the high potential side switching element into a conductive state or non-conductive state, the other signal is turned on a certain time after the rise of the main pulse signal, thereby generating a condition in which the set signal and reset signal are both in an on-state.

Abstract: According to one embodiment, in a level shift switch, a first input signal is inputted into a first input-output terminal, a first output signal is outputted from a second input-output terminal, a second input signal is inputted into the second input-output terminal, a second output signal is outputted from the first input-output terminal. The level shift switch includes a transmission circuit, a first MOSFET, a second MOSFET, and a first one-shot pulse generation circuit.

Abstract: An overdrive circuit includes a pull-up circuit and a pull-down circuit. The pull-down circuit includes first, second and third transistors electrically connected in cascode between an output node and a low voltage supply node. A capacitor is electrically connected from a gate electrode of the third transistor to a gate electrode of the first transistor. A first mono-directional bias device is electrically connected from a drain electrode of the first transistor to a gate electrode of the first transistor. A second mono-directional bias device is electrically connected from the gate electrode of the first transistor to a source electrode of the first transistor.

Abstract: A method and circuit for implementing protection for complementary metal oxide semiconductor (CMOS) output drivers, and a design structure on which the subject circuit resides are provided. An output driver stage transistor stack includes a plurality of series connected PFETs series connected with a plurality of series connected NFETs connected between upper and lower voltage supply rails. A pair of offset DC voltage levels provides respective gate voltages of an intermediate PFET and an intermediate NFET in the output driver stage transistor stack. A pair of pre-driver circuits receiving voltage level translated logic signals drive respective gate inputs of the upper PFET and the lower NFET in the output driver stage transistor stack. A voltage feedback circuit provides respective gate voltages of the PFET and NFET connected together in the output driver stage transistor stack.

Abstract: An apparatus comprising a first stage and a second stage. The first stage may be configured to generate an intermediate signal having a first voltage in response to an input signal having a second voltage received from a pad. The second stage may be configured to generate a core voltage in response to the first voltage. The voltage received from the pad may operate at a voltage compliant with one or more published interface specifications.

Abstract: A level shifter system includes an inverting portion, a non-inverting portion and a cross latch output component. The inverting portion is configured to receive an inverting input, a supply voltage and to generate an intermediary inverting output. The non-inverting portion is configured to receive a non-inverting input, the supply voltage and to generate an intermediary non-inverting output. The cross latch output component is configured to drive the intermediary inverting and non-inverting outputs to inverting and non-inverting outputs, respectively. The inverting and non-inverting outputs are at selected upper and lower levels according to the inverting input and non-inverting inputs, respectively.

Abstract: Disclosed is a level shift device. The level shift device to convert an input signal having a low-voltage level into an output signal having a high-voltage level includes a latch-type level shifter and a voltage generator. The latch-type level shifter includes two upper pull-up P channel transistors and two lower P channel transistors to prevent the gate-source voltage breakdown of the two upper pull-up P channel transistors. The two upper pull-up P channel transistors and the two lower P channel transistors form a latch structure. The voltage generator generates a voltage to prevent the gate-source voltage brake down of the two upper pull-up P channel transistors and provides the voltage to the gate electrodes of the two lower P channel transistors.

Abstract: The voltage level shifter includes a first voltage shift circuit, a second voltage shift circuit, a first switch circuit, a second switch circuit, a third switch circuit and a fourth switch circuit. The first voltage shift circuit receives a first input voltage, and the second voltage shift circuit receives a second voltage shift circuit. When the first voltage is high level voltage, a second output voltage and a first voltage are transformed to a ground voltage so as to open the second switch circuit and the fourth switch circuit, and then the first output voltage is transited to a system voltage. When the second voltage is high level voltage, a first output voltage and a second voltage are transited to a ground voltage so as to open the first switch circuit and the third switch circuit, and then the second output voltage is transited to the system voltage.

Abstract: A dual supply level shifter circuit includes a switching circuit and a set of level shifter circuits coupled to the switching circuit. The switching circuit includes a first set of coupled transistors, wherein the supply switching circuit is coupled to a first supply source that is configured to provide a first power supply voltage and is coupled to a second supply source that is configured to provide a second power supply voltage. The set of level shifter circuits includes a second set of coupled transistors, wherein the set of level shifter circuits is configured to receive a voltage input signal at an input node from a first circuit and to supply to an output node of the dual supply level shifter circuit an output signal having a value that is a highest voltage value between the first power supply voltage and the second power supply voltage.

Abstract: The voltage level shifter includes a first voltage shift circuit, a second voltage shift circuit, a first switch circuit, a second switch circuit, a third switch circuit and a fourth switch circuit. The first voltage shift circuit receives a first input voltage, and the second voltage shift circuit receives a second voltage shift circuit. When the first voltage is high level voltage, a second output voltage and a first voltage are transformed to a ground voltage so as to open the second switch circuit and the fourth switch circuit, and then the first output voltage is transited to a system voltage. When the second voltage is high level voltage, a first output voltage and a second voltage are transited to a ground voltage so as to open the first switch circuit and the third switch circuit, and then the second output voltage is transited to the system voltage.

Abstract: A level shifter for converting between voltages of a core voltage range to voltages within a larger I/O voltage range. The level shifter has interconnected transistors implemented as core devices operable within the core voltage range. The level shifter is connected to first and second power connections at the I/O voltage range. A voltage clamping element implemented as a core device has a threshold voltage greater than or equal to the difference between the I/O voltage range and the core voltage range and configured to prevent overstressing the transistors with voltages beyond the core voltage range. The input to the level shifter is within the core voltage range. The level shifter output signal has a high level at the high voltage of the I/O voltage range and a low level at approximately one threshold voltage above the low voltage level of the core voltage range.

Abstract: A level shifter system includes an inverting portion, a non-inverting portion and a cross latch output component. The inverting portion is configured to receive an inverting input, a supply voltage and to generate an intermediary inverting output. The non-inverting portion is configured to receive a non-inverting input, the supply voltage and to generate an intermediary non-inverting output. The cross latch output component is configured to drive the intermediary inverting and non-inverting outputs to inverting and non-inverting outputs, respectively. The inverting and non-inverting outputs are at selected upper and lower levels according to the inverting input and non-inverting inputs, respectively.

Abstract: A write driver for a memory circuit includes a control circuit configured to: operate a first push-pull driver to generate a first drive signal in a first voltage domain at a first node based on an input signal in a second domain and in response to a mode select signal being in a first mode, wherein the first drive signal is at a same logic level as the input signal; operate a second push-pull driver to generate a second drive signal in the first voltage domain at a second node based on the input signal and in response to the mode select signal being in the first mode, wherein the second drive signal is at a complement logic level with respect to the input signal; and operate the first and second push-pull drivers to float the first and second nodes in response to the mode select signal being in a second mode.

Abstract: One or more systems and techniques for communicating a signal between a first chip and a second chip using one or more circuits are provided. If the signal corresponds to a first voltage, one or more voltages are provided to one or more locations and a capacitive load is charged using a pull-up driver that is connected to a power supply. If the signal corresponds to a second voltage, one or more voltages are provided to one or more locations and the capacitive load is discharged using a pull-down driver that is connected to ground. When the first chip is powered off, a fail-safe mode is provided by configuring a cross control circuit to generate a bias to control one or more transistors.

Abstract: A powerline control interface includes a powerline connection, a level shifter connected to the powerline connection, the level shifter having a zero crossing detector signal output, a capacitor connected to the powerline connection, an inductor connected to the powerline connection, and a receive signal inductively coupled to the inductor.

Abstract: The present invention discloses a multipurpose half bridge signal output circuit. The multipurpose half bridge signal output circuit is capable of selectively operating under a charge sharing mode or a gate pulsing modulation mode. The multipurpose half bridge signal output circuit includes: a first output pin; a second output pin; a first circuit zone having a first common end coupled to the first output pin; and a second circuit zone having a second common end coupled to the second output pin.

Abstract: A level shifter includes a latch supplied at a first voltage VDD1. First and second switches are connected in series with first and second latches and are cross-coupled to maintain the state of the latches during a stability period. A controller responds to a change of state of an input signal at a voltage different from the first voltage at an end of the stability period to deactivate both the first and second switches, to cause third and fourth switches to deactivate both the first and second latches during a transition period, and subsequently to change the state of the latch and maintain the changed state during the subsequent stability period. This avoids undesirable compromise between current consumption and transfer delay, as in a conventional level shifter.

Abstract: A semiconductor apparatus includes a power supply changing unit. The power supply changing unit is configured to receive an enable signal and power supply voltage, generate first voltage or second voltage according to the enable signal, change a voltage level of the second voltage according to a level signal, and supply the first voltage or the second voltage as a driving voltage of an internal circuit, wherein the internal circuit receives a first input signal to output a second input signal.

Abstract: A voltage generator includes a latch and a first voltage adjustment circuit. The latch includes a latch input terminal, a trigger terminal, a positive latch output terminal and a negative latch output terminal. The latch is configured to have the latch input terminal thereof for receiving an input signal, the trigger terminal thereof for receiving a trigger signal, the positive latch output terminal thereof for outputting a first latch output signal having a phase same as that of the input signal, and the negative latch output terminal thereof for outputting a second latch output signal having a phase opposite to that of the input signal. The first voltage adjustment circuit is electrically coupled to the latch and configured to output a first common voltage signal. A display device using the aforementioned voltage generator is also provided.

Abstract: A level shifter circuit for low power applications that can shift the level of a digital signal that is below the threshold voltage of output transistors. The level shifter uses core transistors in the input stage and includes an intermediate stage that limits the voltage applied to the drain of the core transistors. The intermediate stage may include two transistors whose gate is connected to a reference voltage and turns off when the voltage at their source is equal to a threshold voltage below the reference voltage, thus limiting the maximum voltage applied to the transistors present in the input stage.

Abstract: An amplifier has a first pull-up path coupled between a voltage supply node and an output node, and a pull-down path coupled between the output node and a ground supply node. A second pull-up path is coupled between the voltage supply node and the output node. The second pull-up path is actuated by a feedback signal and biased by a biasing signal. An inverter circuit is operable to invert the signal at the amplifier output node to generate the feedback signal. A biasing circuit is configured to generate the biasing signal. The biasing circuit is configured to control a relative strength of the pull-down path to the second pull-up path, wherein the pull-down path is stronger than the second pull-up path in a manner that is consistently present over all PVT corners.

Abstract: Apparatuses and methods, such as those for shifting a voltage level are disclosed. An example apparatus includes a level shifter configured to provide output signals based on a logical value of an input signal, where the level shifter is precharged to a precharge voltage prior to providing the output signals. An example method includes precharging an output node of a level shifter to a precharge voltage responsive to a precharge signal via a precharge circuit. A transition of the input signal from a first logical value to a second logical value is received at the level shifter and an output signal is provided at the output node based on the second logical value of the input signal.

Abstract: An integrated circuit including a processor configured to operate off a supply voltage being applied at one of a plurality of external pins; and internal input/output circuitry configured to select between the supply voltage and at least one other supply voltage being applied at another of the plurality of external pins.

Abstract: Certain aspects of the present disclosure provide a voltage level shifting circuit employing a low latency, AC-coupled voltage boost circuit, as well as other circuits and apparatus incorporating such a level shifting circuit. Such level shifting circuits provide significantly lower latency compared to conventional level shifters (e.g., latency reduced by at least a factor of two). Offering consistent latency over the simulation corners, level shifting circuits described herein also provide significantly lower power consumption and reduced duty cycle distortion compared to conventional level shifters.

Abstract: A standard cell circuit including an input terminal to which input an input signal is input; an output terminal to output an output signal; a first wiring conductor, connected to an external power supply that outputs a first power supply voltage; a second wiring conductor to supply a second power supply voltage that is lower than the first power supply voltage; a standard cell to operate at the second power supply voltage supplied from the second wiring conductor; and a conversion circuit, connected to the first wiring conductor and the second wiring conductor, to convert the first power supply voltage input from the first wiring conductor into the second power supply voltage for output to the second wiring conductor.

Abstract: An apparatus includes first and second switches. The first switch is for coupling a first node to a second node responsive to a first control signal having a first value, and for decoupling these nodes responsive to the first control signal having a second value. The second switch is for coupling the first node to a third node responsive to a second control signal having the first value, and for decoupling these nodes responsive to the second control signal having the second value. A load is coupled between the second and third nodes. A detection circuit coupled to the first node is configured to generate a signal indicating whether voltage at the first node exceeds a threshold. First and second modules are configured to set the first and second control signals to the second value responsive to the signal indicating that the voltage at the first node exceeds the threshold.

Abstract: A first circuit receives input signals of the first electric potential system which uses a first high potential and a first low potential as the power supply electric potential, and outputs a first signal which is a signal of the first electric potential system, a second circuit which generates output signals according to the input signal of the second electric potential system which uses as the power supply electric potential a second high potential of the first electric potential system, wherein the second circuit includes an initial stage inverter that receives the second signals and outputs third signals, and an initial stage switch that switches between connecting and disconnecting the initial stage inverter and a power supply that supplies the second high potential or a power supply that supplies the second low potential based on the first signals, and generates the output signals based on the third signals.

Abstract: A level-down shifter includes: a first load device between a first voltage and a first node; a second load device between the first voltage and a second node; a first input device between the first node and a third node, receiving a reference voltage signal, and adjusting a first node voltage of the first node based on the reference voltage signal; a second input device between the second node and the third node, receiving an input signal, and adjusting a second node voltage of the second node based on the input signal; and a current source between a second voltage and the third node, receiving the second node voltage of the second node, and adjusting a third node voltage of the third node and a bias current based on the second node voltage of the second node, wherein a level of the input signal is higher than the first voltage.

Abstract: A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.

Abstract: An integrated level shifting combinatorial circuit receives a plurality of input signals in a first voltage domain and performs a combinatorial operation to generate an output signal in a second voltage domain. The circuit includes combinatorial circuitry includes first and second combinatorial circuit portions operating in respective first and second voltage domains. The second combinatorial circuit portion has an output node whose voltage level identifies a value of the output signal and includes feedback circuitry which applies a level shifting function to an intermediate signal generated by the first combinatorial circuit portion.

Abstract: A voltage level shifting circuit with an input terminal and an output terminal. The level shifting circuit has a field-effect transistor (FET) switch with a gate attached to the input terminal, a drain attached to the output terminal and a source attached to a current changing mechanism. The current changing mechanism includes a current mirror circuit having an output connected between the source and an electrical earth. The output of the current mirror circuit is preferably adapted to change a current flowing between the drain and the source based on an input voltage applied to the gate.

Abstract: Disclosed herein are an output driving circuit and a transistor output circuit. The output driving circuit includes: a reference voltage generating unit generating a reference voltage; a level shift unit including a transistor latch and turning off a first transistor of a driving circuit or driving the first transistor; a driving circuit unit including the first transistor that is driven to apply power to a gate of an output transistor and a second transistor that is driven complementarily to the first transistor to lower a gate voltage of the output transistor and drive the output transistor; and an withstand voltage protecting unit that is driven by receiving a reference voltage and includes a first withstand voltage protecting unit for protecting transistors of the transistor latch and the first transistor for stable operations thereof and a second withstand voltage protecting unit for protecting the output transistor for a stable operation thereof.

Abstract: A floating gate driver uses a single-end level shifter to translate a set signal and a reset signal induced by a rising edge and a falling edge of a switch signal to a common output terminal to generate an output voltage for a bistable circuit to generate a level shifted switch signal. Under control of a well transient detect signal asserted by detecting noise in the output voltage, a masking circuit between the single-end level shifter and the bistable circuit masks noise in the output voltage. This configuration has lower area penalty and better noise immunity.