Abstract: An apparatus comprising: a solid-state series switch positioned between a transmitter's high-voltage, direct current (DC) bus and a high-voltage DC power source, wherein the series switch is configured to establish an open circuit between the transmitter and the power source upon receiving a first trip signal; a solid-state shunt switch operatively coupled in shunt between the transmitter high voltage DC bus and a ground, wherein the shunt switch is configured to provide a short-circuit path from the transmitter to ground upon receiving a second trip signal; and a controller electrically coupled to the series and shunt switches, wherein the controller is configured to generate the first and second trip signals in the event that the controller receives a trouble signal from the transmitter, and wherein the first trip signal is sent to the series switch before the second trip signal is sent to the shunt switch.

Abstract: A method and a circuit for controlling a thyristor (V1) into conducting state, the thyristor (V1) being in a rectifier, which rectifier supplies DC voltage to a DC voltage circuit. The circuit comprising a trigger capacitor (C2) adapted to be charged from the voltage difference across the thyristor (V1) when the anode-to-cathode voltage of the thyristor is positive, a zener diode (V5) adapted to be triggered with the voltage of the trigger capacitor (C2), when the voltage of the trigger capacitor (C2) exceeds the breakdown voltage of the zener diode (V5), and an auxiliary thyristor (V3) adapted to be triggered with the current from the trigger capacitor (C2) flowing via the zener diode (V5), wherein the cathode of the auxiliary thyristor (V3) is connected to the gate of the thyristor (V1) for triggering the thyristor (V1) with the current from the trigger capacitor (C2) flowing via the auxiliary thyristor (V3) for using the thyristor (V1) in a diode mode.

Abstract: A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.