Abstract: A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

Abstract: A magnetic field sensor system comprises an electrically conducting film of ferromagnetic nanoparticles printed directly on a supporting structure, and electrically conducting contacts coupled to the film for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current in a direction that is generally perpendicular to the current direction in the plane of the film.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: A protection circuit is installed between a gate terminal (a control terminal) and an emitter terminal (a ground terminal) of a voltage driven element generally called a power device. The protection circuit is structured as a duplex protection system in which a first discharge circuit is configured to perform a discharge from the control terminal at a current value set in accordance with a current flowing between the load terminal and the ground terminal, an overcurrent generation detection device is configured to detect an existence of an overcurrent between the load terminal and the ground terminal, and a second discharge circuit is configured to perform the discharge from the control terminal at a predetermined constant current value after the overcurrent is detected.

Abstract: An overcurrent protection circuit (6) outputs an overcurrent protection signal (S6) based on a sense voltage (Vsense). A masking circuit (5) is configured so as to allow a masking signal (S5) to be kept set to “L” even when an input signal (IN) rises to “H” (an IGBT (1) is turned on) and an NPN bipolar transistor (23) is turned off, and allow the masking signal (S5) to be changed only after a capacitor (C12) is charged up and a voltage (V9) exceeds a reference voltage (VR). An AND gate (25) receives the masking signal (S5) at one of input terminals thereof and the overcurrent protection signal (S6) at the other of the input terminals thereof, and provides an output which is then output as an interruption control signal (SC_OUT) from a sense output terminal (P2) and is finally supplied to a gate terminal (P3) of the IGBT (1).

Abstract: A protected switch has a power semiconductor device (P) having first and second main electrodes (D and S) for coupling a load (L) between first (2) and second (3) voltage supply lines, a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device a sense current that flows between the first (d) and sense electrodes (S1) and is indicative of the current that flows between the first (D) and second (S) main electrodes. A control arrangement (S) has a sense resistance (R4) coupled to the sense electrode (S1) and across which a sense voltage is developed by the sense current (I.sub.3). A control semiconductor device (M3) has its main electrodes coupled between the control electrode (G) and the second (S) main electrode of the power semiconductor device (P).

Abstract: A circuit arrangement automatically sets quiescent collector current conditions for a class A/B RF power transistor, which is configured of a plurality of parallel-connected transistors formed in a common semiconductor die. The biasing circuit arrangement includes a temperature-sensing transistor having its collector-emitter current flow path coupled with a programmable constant current source. A differential amplifier circuit is coupled to the base and emitter electrodes of the temperature sensing transistor, and generates a bias voltage for biasing each of the transistors of the RF power device. This bias voltage is combined with a programmable D.C. offset voltage. The values of the constant current and D.C. offset voltage are programmed such that the average of the quiescent collector currents of the parallel-connected transistors of the RF power transistor corresponds to the quiescent collector current through the temperature-sensing transistor.

Abstract: A line driver switching stage includes a terminal for a reference potential, a terminal for a supply potential, and an output terminal of the line driver switching stage. A differential amplifier has a first and a second amplifier branch. The first amplifier branch has a resistor with first and second terminals. The first terminal of the resistor is the terminal for the reference potential. An emitter follower transistor has an emitter and has a base-to-emitter path connected between the second terminal of the resistor and the output terminal. A saturation prevention element has a first terminal connected to the output terminal and a second terminal connected to the second amplifier branch. A bipolar transistor has a base-to-emitter path connected between the second terminal of the saturation prevention element and the terminal for the supply potential. The bipolar transistor has a collector connected to the emitter of the emitter follower transistor.

Abstract: A first current mirror circuit for driving a first output stage transistor to flow out current to a coil in a motor is disposed between a power source voltage line and a reference voltage line, and a second current mirror circuit for driving a second output stage transistor to receive a current flowing out from the coil of the motor is disposed between a reference voltage line and a ground line.

Abstract: A semiconductor device includes a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to the gate electrode, a current detecting insulated gate type switching element connected in parallel to the main insulated gate type switching element, a detecting resistor for detecting a current flowing in the current detecting insulated gate type switching element, a gate controlling element capable of controlling the gate voltage by a drop voltage in the detecting resistor, and a gate control relieving element for relieving a varying speed of the gate voltage varied based on an operation of the gate controlling element.

Abstract: A basic logic circuit 10 which functions as a data selector consists of a basic circuit 11, a HET (hot electron transistor) 12, the first and second emitters of which are connected to the first emitter of a HET 16 and a data input end A respectively, and an inverter 13 connected to an output end of the circuit 11. In a HET 14 having no base electrode, its collector is connected to a power supply line VCC via a load resistor 15, its first emitter is used exclusively for current output by connecting to the collector of the HET 16 the second emitter of which is connected to a power supply line VSS, its second emitter is used for current input/output by directly connected to a control input end S, and its third emitter is used exclusively for current input by connecting to the first emitter of a HET 17 the second emitter of which is connected to a data input end B. An output data Q is equal to an input data A/B when a control data S is high/low level respectively.

Abstract: By disposing various current-sensing layers on a semiconductor element with a current-sensing function, wherein signals corresponding to the sensing currents derived from each current-sensing electrode are inputted independently into said over-current control circuit and short-circuit control circuit in a control circuit for said semiconductor element; or by constructing the current-sensing resistor in said control circuit with various resistors connected in series, wherein a single sensing current flows into this resistor to generate various detection voltages divided by the resistor, while detection voltages with different values are inputted independently into said main current turn-off command circuit and main current control circuit the value I.sub.oc of the over-current detection level for the semiconductor element with a current-sensing function and the value I.sub.sct at the short-circuit current detection level can be set independently of each other. Therefore, while increasing I.sub.oc, setting I.