Bipolar Transistor Patents (Class 327/478)
  • Patent number: 11393902
    Abstract: A semiconductor device includes a semiconductor substrate comprising an upper surface and a lower surface, an upper electrode provided on the upper surface, and a lower electrode provided on the lower surface. The semiconductor substrate includes, in a planar view, a first section including a center of the semiconductor substrate and a second section located between the first section and a peripheral edge of the semiconductor substrate. The first and second sections each comprise a MOSFET structure including a body diode. The MOSFET structure in the first section and the MOSFET structure in the second section are different from each other such that a forward voltage drop of the body diode in the first section with respect to a current density is higher than a forward voltage drop of the body diode in the second section with respect to the current density.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: July 19, 2022
    Assignee: DENSO CORPORATION
    Inventors: Tatsuji Nagaoka, Yusuke Yamashita, Yasushi Urakami
  • Patent number: 11380784
    Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: July 5, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Misaki Takahashi, Yuichi Harada, Kouta Yokoyama
  • Patent number: 10698435
    Abstract: The present disclosure relates to an electronic current equalization module that comprises a transistor having a collector, a base and an emitter. The module also comprises an input port, a ground port electrically connected to the emitter, a collector port electrically connected to the collector, a base port electrically connected to the base, and a non-linear device electrically connected between the input port and the collector. A current mirror circuit comprising a first module configured as a reference module and one or more second modules configured as follower modules is disclosed. A method of assembling a current mirror circuit is also disclosed.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: June 30, 2020
    Assignee: GROUPE VERITRON INC.
    Inventor: Pierre Boivin
  • Patent number: 9871477
    Abstract: A motor speed control circuit including a voltage-dividing module, a first analog-to-digital converter, a second analog-to-digital converter and an operation module. The voltage-dividing module includes a first resistor unit and a second resistor unit. The first analog-to-digital converter receives a supply voltage and converts the supply voltage into a digital supply voltage. The second analog-to-digital converter receives a divided voltage generated by the voltage-dividing module, and converts the divided voltage into a digital divided voltage. The divided voltage is associated with a resistance ratio between the first resistor unit and the second resistor unit. The operation module receives the digital divided voltage and determines a motor speed curve according to the resistance ratio. The operation module generates a first pulse width modulation signal according to the motor speed curve and the digital supply voltage to drive a motor.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: January 16, 2018
    Assignee: ANPEC ELECTRONICS CORPORATION
    Inventor: Ming-Jung Tsai
  • Patent number: 9335223
    Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: May 10, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Mikel K. Ash, Krishnaswamy Nagaraj, Paul Kimelman, Steve Vu
  • Patent number: 9331563
    Abstract: Exemplary embodiments are directed to an snubber circuit and a power converter having an active circuit. The snubber circuit includes a series connection of a first diode and a first inductor connected between a first interfacing point and a first connection point, a second diode connected between a second connection point and a second interfacing point, a series connection of a third diode and a second inductor between a third interfacing point and the second connection point, a switching device connected between the first connection point and the third interfacing point, and a first capacitor connected between the first connection point and the second connection point. The first, the second, and the third diode are forward-biased along a path between the first interfacing point and the second interfacing point and through the third interfacing point.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: May 3, 2016
    Assignee: ABB RESEARCH LTD
    Inventors: Tin-Ho Li, Ngai-Man Ho, Gerardo Escobar, Jonathan Bradshaw
  • Patent number: 9111989
    Abstract: A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: August 18, 2015
    Assignee: Infineon Technologies Austria AG
    Inventors: Stephan Voss, Erich Griebl, Alexander Breymesser
  • Publication number: 20150070078
    Abstract: A circuit for conducting soft turn-off includes a semiconductor switching device, a resistor and a sink pin. The second semiconductor switching device has a current inflow terminal connected to a current control terminal of a first semiconductor switching device, and a current outflow terminal connected to a ground. The resistor has a first terminal connected to the current inflow terminal of the second semiconductor switching device, and a second terminal connected to a current control terminal of the first semiconductor switching device. The sink pin applies a value lower than a previous applied value (i.e., a low value) to the current control terminal of the second semiconductor switching device.
    Type: Application
    Filed: December 26, 2013
    Publication date: March 12, 2015
    Applicant: HYUNDAI MOTOR COMPANY
    Inventors: Kang Ho Jeong, Ki Jong Lee, Jee Hye Jeong
  • Publication number: 20140354347
    Abstract: The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact.
    Type: Application
    Filed: August 19, 2014
    Publication date: December 4, 2014
    Inventors: MIN-HWA CHI, LIHYING CHING, DEYUAN XIAO
  • Patent number: 8847664
    Abstract: A gate control circuit including: a gate input arranged to receive an input gate feed signal; a gate output arranged to be connected, during normal operation, to at least one switching module for controlling current through a main circuit, the gate output being connected to the gate input; a power supply; and a switch connected between the power supply and the gate output, the switch being arranged to close as a response to a failure. A corresponding power module and method are also presented.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: September 30, 2014
    Assignee: ABB Research Ltd.
    Inventors: Filippo Chimento, Willy Hermansson, Staffan Norrga
  • Publication number: 20140205070
    Abstract: Various of the disclosed embodiments contemplate systems and methods in an X-ray imaging system, such as a CT system, facilitating more crisp switching between high and low voltages at an X-ray tube. Certain embodiments circuits which store and discharge energy to improve voltage rise and fall times. These circuits may mitigate the effects of losses, hysteresis cycles, and leakage currents. More controlled voltage rise and fall times may improve X-ray emission and detection synchronization.
    Type: Application
    Filed: January 22, 2013
    Publication date: July 24, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: Antonio Caiafa
  • Publication number: 20140191793
    Abstract: It is presented a power supply for providing power to control a power switch for a high voltage application. The power supply comprises: a high voltage divider arranged to be connected to a first current terminal of the power switch; a step down DC/DC converter connected to an output of the high voltage divider, wherein the step down DC/DC converter is arrange to provide an output voltage for control of the at least one power switch to an output of the power supply; and a bypass control unit arranged to control the high voltage divider to short circuit an main input and a main output of the high voltage divider when the voltage across the power switch is lower than a threshold voltage.
    Type: Application
    Filed: June 27, 2011
    Publication date: July 10, 2014
    Applicant: ABB TECHNOLOGY AG
    Inventors: Jürgen Häfner, Christer Fessel
  • Publication number: 20140167835
    Abstract: This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base. The intrinsic region increases the efficiency of the switch and reduces losses. The collector, base, and emitter each have respective terminals, and an AC component of current passing through the base terminal is greater than an AC component of current passing through the emitter terminal. Additionally, in an on-state a first alternating current between the base and collector terminals is greater than a second alternating current between the collector and emitter terminals. In other words, AC passes primarily between collector and base as controlled by a DC current between the base and emitter.
    Type: Application
    Filed: August 27, 2013
    Publication date: June 19, 2014
    Inventors: Gideon Van Zyl, Gennady G. Gurov
  • Publication number: 20140159797
    Abstract: A multiplex circuit includes: a plurality of input transistors that correspondingly receive a plurality of input signals of different switching points, the switching points beginning with edges of symbol periods of the plurality of input signals; one of a common base transistor that is connected to a collector of the input transistor, and a common gate transistor that is connected to a drain of the input transistor; and an output end that is connected to one of the collector of the common base transistor and the drain of the common gate transistor, and to which a signal that is obtained by combining the plurality of input signals is output.
    Type: Application
    Filed: October 28, 2013
    Publication date: June 12, 2014
    Applicant: FUJITSU LIMITED
    Inventor: Mariko KASE
  • Publication number: 20130293283
    Abstract: A radio-frequency (RF) switch comprises first and second heterojunction bipolar transistors (HBTs) that control transmission of an RF input signal between an input terminal and an output terminal. In some embodiments, the RF input signal is transmitted from the input terminal to the output terminal where the first and second HBTs are turned ON, and otherwise the RF input signal is not transmitted from the input terminal to the output terminal.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Moon-Suk Jeon, Chan Hoe Koo, Hyung Bin Lee, Jung Min Oh
  • Publication number: 20130257516
    Abstract: A switch circuit and an electronic device using the same include a power switch transistor, a controlling circuit, a regulated capacitor, and a capacitor. The power switch transistor is connected between an input and an output of the switch circuit. An output of the controlling circuit is connected to a controlling electrode of the power switch transistor and outputs pulse width modulation (PWM) signals to turn the power switch transistor on and off. The regulated capacitor is connected between an output of the switch circuit and ground. The capacitor is connected between an output of the controlling circuit and ground for increasing an inclination of a rising edge and a falling edge of PWM signals to slow down the speed of switching the power switch transistor on and off, thereby making the regulated capacitor charge slowly and the output voltage of the switch circuit stable.
    Type: Application
    Filed: August 28, 2012
    Publication date: October 3, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventor: DONG-LIANG REN
  • Publication number: 20130214847
    Abstract: Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor.
    Type: Application
    Filed: April 2, 2013
    Publication date: August 22, 2013
    Applicant: Micron Technology, Inc.
    Inventor: Micron Technology, Inc.
  • Publication number: 20130193867
    Abstract: This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.
    Type: Application
    Filed: March 6, 2013
    Publication date: August 1, 2013
    Applicant: ADVANCED ENERGY INDUSTRIES, INC.
    Inventors: Gideon J. Van Zyl, Gennady G. Gurov
  • Patent number: 8497728
    Abstract: An electronic control apparatus includes a switching element having a control terminal; an ON-drive constant-current circuit for supplying a constant current to the control terminal, thereby charging the control terminal of the switching element with electrical charge; an OFF-drive switching element for discharging electrical charge from the control terminal of the switching element by being turned ON; and a control circuit adapted to control the ON-drive constant-current circuit and the OFF-drive switching element in response to a drive signal being inputted, thereby controlling the voltage of the control terminal of the switching element to drive the switching element. The ON-drive constant-current circuit includes a current control transistor and a current detection element.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: July 30, 2013
    Assignee: Denso Corporation
    Inventors: Shunichi Mizobe, Tsuneo Maebara, Kazunori Watanabe
  • Patent number: 8441305
    Abstract: Low leakage diodes and methods of forming the same are disclosed. In one embodiment an apparatus includes a designed or parasitic bipolar transistor having an emitter, a base and a collector. The bipolar transistor is configured to operate as a diode, the diode having reverse-biased and forward-biased modes of operation. The emitter and base operate as first and second terminals of the diode, respectively. The collector is configured to receive a collector bias voltage, which is controlled relative to a voltage of the emitter to reduce a diffusion leakage current of the diode when the diode is in the reverse-biased mode of operation.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: May 14, 2013
    Assignee: Analog Devices, Inc.
    Inventor: David Hwa Chieh Shih
  • Patent number: 8432213
    Abstract: The temperature dependence of detection characteristics in a wave detector circuit is suppressed. A bias resistor and/or a load resistor are/is constituted by a resistive element having a high temperature coefficient, whereby a shift in detected output along with a change in temperature of a wave detector diode included in a diode detector circuit is canceled by a shift in detected output along with a change in temperature of the bias resistor and/or a shift in detected output along with a change in temperature of the load resistor.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: April 30, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shingo Oishi, Toshiya Tsukao
  • Publication number: 20130082762
    Abstract: The present invention provides a power switch series circuit and its control method. The power switch series circuit includes a plurality of series modules, a control module and a drive module. At least one series module has a power switch and a detection module, and the detection module includes a detection unit and an isolation unit, so as to detect the overvoltage and output a voltage detection signal based on the detected voltage. The control module receives the voltage detection signal and outputs the corresponding control signal. The drive module amplifies the control signal to drive each power switch to turn ON or turn OFF. The control module outputs the corresponding control signal to turn off each power switch when the overvoltage happens.
    Type: Application
    Filed: March 16, 2012
    Publication date: April 4, 2013
    Applicant: DELTA ELECTRONICS (SHANGHAI) CO., LTD.
    Inventors: Hong-Jian GAN, Jian-Ping YING, Jie FU, Wei-Liang FU, Ming WANG
  • Patent number: 8405446
    Abstract: The temperature dependence of detection characteristics in a wave detector circuit is suppressed. A bias resistor and/or a load resistor are/is constituted by a resistive element having a high temperature coefficient, whereby a shift in detected output along with a change in temperature of a wave detector diode included in a diode detector circuit is canceled by a shift in detected output along with a change in temperature of the bias resistor and/or a shift in detected output along with a change in temperature of the load resistor.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: March 26, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shingo Oishi, Toshiya Tsukao
  • Patent number: 8362821
    Abstract: An electronic device comprising a generator for generating a stream of charge carriers. The generator comprises a bipolar transistor having an emitter region, a collector region and a base region oriented between the emitter region and the collector region, and a controller for controlling exposure of the bipolar transistor to a voltage in excess of its open base breakdown voltage (BVCEO) such that the emitter region generates the stream of charge carriers from a first area being smaller than the emitter region surface area. The electronic device may further comprise a material arranged to receive the stream of charge carriers for triggering a change in a property of said material, the emitter region being arranged between the base region and the material.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: January 29, 2013
    Assignee: NXP B.V.
    Inventors: Tony Vanhoucke, Godefridus A. M. Hurkx, Jan W. Slotboom
  • Publication number: 20120274388
    Abstract: A switching element having an electromechanical switch (such as an electrically conductive membrane switch, for example a graphene membrane switch) is disclosed herein. Such a switching element can be made and used in a switching power converter to reduce power loss and to maximize efficiency of the switching power converter.
    Type: Application
    Filed: April 29, 2011
    Publication date: November 1, 2012
    Applicant: CLEAN ENERGY LABS, LLC
    Inventors: David A. Badger, Joseph F. Pinkerton
  • Patent number: 8289068
    Abstract: The invention relates to a method for switching without any interruption between two winding taps (tap n, tap n+1) of a tap-changing transformer, wherein each of the two winding taps is connected to the common load output line via in each case one mechanical switch (Ds) and a series circuit, arranged in series thereto, comprising two IGBTs (Ip, In) which are switched in opposite directions.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: October 16, 2012
    Assignee: Maschinenfabrik Reinhausen GmbH
    Inventors: Oliver Brueckl, Dieter Dohnal, Hans-Henning Lessmann-Mieske
  • Patent number: 8207781
    Abstract: Provided is an SPDT switch having improved isolation characteristics in an RF band. The SPDT switch includes a serial switching unit, a current sink unit, a switching isolation unit, and a DC blocking unit. The serial switching unit includes first and second HBTs. The current sink unit sinks a current flowing from a common input terminal to each of first and second output terminals of the serial switching unit. The switching isolation unit causes an unselected output terminal of the first and second output terminals to be electrically isolated from the common input terminal when the serial switching unit operates. The DC blocking unit blocks a DC between the first HBT and the first output terminal and a DC between the second HBT and the second output terminal. Accordingly, it is possible to provide better insertion-loss and isolation characteristics in higher frequency bands than typical switches.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: June 26, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Youn Sub Noh, In Bok Yom
  • Patent number: 8183894
    Abstract: A device (100) for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device (100) comprising: a bipolar transistor (102) having a base (B), a collector (C), and an emitter (E); a control unit (104) adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor (102) in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: May 22, 2012
    Assignee: NXP B.V.
    Inventors: Sebastien Nuttinck, Tony Vanhoucke, Godefridus Hurkx
  • Patent number: 8179186
    Abstract: Techniques are disclosed for reducing off-state leakage current in a differential switching device. The techniques can be embodied, for example, in a method that includes receiving a differential input signal at a differential input of each of a primary switch and a dummy switch. In an enabled-state of the device, the method further includes passing the differential input signal to a differential output of the primary switch. In a disabled-state of the device, the method further includes canceling off-state leakage current at the differential output of the primary switch, by virtue of the dummy switch having its differential output reverse-coupled to the differential output of the primary switch. The method may further include preventing the dummy switch from passing signals other than off-state leakage signals. The techniques can be embodied, for instance, in a switching device.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: May 15, 2012
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Gregory M. Flewelling, Douglas S. Jansen
  • Publication number: 20120049932
    Abstract: There is offered a switching device control circuit that can accurately estimate a temperature of a power device to execute thermal shutdown without increasing the number of terminals. The control circuit has an output unit controlling an operating current flowing through an IGBT based on an input signal, a temperature detection unit outputting a detection signal when a temperature of the control circuit rises above a second preset temperature that is set corresponding to a first preset temperature of the IGBT after the IGBT commences its operation, and an output control unit controlling the output unit so as to turn off the IGBT in response to the detection signal.
    Type: Application
    Filed: August 26, 2011
    Publication date: March 1, 2012
    Applicant: ON Semiconductor Trading, Ltd.
    Inventors: Ryuji Hokabira, Takekiyo Okumura
  • Patent number: 8093925
    Abstract: An integrated regulated current drive circuit for driving a squib of an inflatable airbag has a current sense resistor connected in series with a load, and a reference resistor connected in series with a reference current source. Both resistors are matched to define a precise ratio of resistance values which determines the amount of current fed to the squib. Both resistors are implemented by combining a number of identical on-chip resistor elements.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: January 10, 2012
    Assignee: Texas Instruments Deutschland GmbH
    Inventors: Sri N. Easwaran, Michael Wendt
  • Publication number: 20110298527
    Abstract: A deadtime optimization apparatus and method may determine when it is safe to turn a switch ON, eliminating the need to have a switch controller purposely insert a deadtime period in the algorithm (i.e., it can go back to producing ideal PWM). Since the decision of when it is safe to turn ON the switch may be achieved through measurement, it is expected that the length of time may change for each pulse as the operating conditions change. Therefore, the apparatus and methods of the present invention may take on a dynamic characteristic because the safe to turn ON (STTO) time may vary for each pulse.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 8, 2011
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: SONNY LLOYD, NICOLAE MORCOV, MICHAEL ANDREOU, DIKRAN YALDIZCIYAN
  • Publication number: 20110273224
    Abstract: A complementary high voltage switched current source circuit has a complementary current source pair, wherein a first of the current source pair is coupled to a positive voltage rail and a second of the current source pair is coupled to a negative voltage rail. A digital logic-level control interface circuit is coupled to the complementary current source pair and to the positive voltage rail and the negative voltage rail. A pair of high voltage switches is coupled to the complementary current source pair and the digital logic-level control interface circuit and controlled by the digital control interface circuit.
    Type: Application
    Filed: July 21, 2011
    Publication date: November 10, 2011
    Inventor: Benedict C.K. Choy
  • Publication number: 20110257807
    Abstract: Disclosed is an apparatus and system for controlling power saving. The system for controlling power saving includes: a battery supplying power; a power saving controlling apparatus including a sensing unit detecting a user's contact and generating an activation signal when a user's contact is acknowledged, a latch unit maintaining the activation signal which has been received from the sensing unit, and a switch unit disposed on a current path that delivers power, and connecting the current path according to the activation signal from the latch unit; and a microcomputer controlling an operation of the system connected upon receiving power from the power saving controlling apparatus.
    Type: Application
    Filed: September 30, 2010
    Publication date: October 20, 2011
    Applicant: WOONGJIN COWAY CO., LTD.
    Inventors: In Seok SEO, Ki Chul KIM, Joung Ho SON, Ju Hyun BAEK
  • Publication number: 20110248771
    Abstract: The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (“RF”) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.
    Type: Application
    Filed: April 8, 2011
    Publication date: October 13, 2011
    Applicant: Georgia Tech Research Corporation
    Inventors: Anuj Madan, John D. Cressler
  • Patent number: 8013658
    Abstract: A circuit for controlling time sequence of an electronic device, the circuit comprises a delay unit to receive a first control signal, a first switch unit connected to the delay unit to receive the first control signal after a rising edge of the first control signal, a second switch unit to promptly receive the first control signal in response to a falling edge of the first control signal, and a voltage output unit connected to the first and second switch units. The voltage output unit is selectively controlled by the first or the second switch unit to output a second or a third control signal to turn on or off the electronic device.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: September 6, 2011
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventor: Yong-Zhao Huang
  • Patent number: 7961032
    Abstract: A method of recovering gain in a bipolar transistor includes: providing a bipolar transistor including an emitter, a collector, and a base disposed between junctions at the emitter and the collector; reverse biasing the junction disposed between the emitter and the base with an operational voltage and for an operational time period, so that a current gain ? of the transistor is degraded; idling the transistor, and generating a repair current Ibr into the base, while forward biasing the junction disposed between the emitter and the base with a first repair voltage (VEBR), and while at least partly simultaneously reverse biasing the junction disposed between the collector and the base with a second repair voltage (VCBR), for a repair time period (TR), so that the gain is at least party recovered; wherein VEBR, VCBR and TR have the proportional relationship: TR ? (??)2×exp [1/(Tam+Rth×le×VCER)], VCER=VBER+VCBR, and le=?×Ibr, ? is the normal current gain of the transistor, ?? is the target recovery gain of the tr
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: June 14, 2011
    Assignee: International Business Machines Corporation
    Inventors: Zhijian Yang, Ping-Chuan Wang, Kai Di Feng
  • Patent number: 7948276
    Abstract: It is presented a gate driver circuit for driving an electric switch, the switch being arranged to control a main current using a gate signal. The gate driver circuit comprises: a non-linear capacitor means having a lower capacitance when an applied voltage is under a threshold voltage and a higher capacitance when an applied voltage is over the threshold voltage, wherein the non-linear capacitor is arranged to be connected between a high voltage connection point of the switch and a connection point for the gate signal; a current change rate sensor, the current change rate sensor being configured to detect changes in a main current of the electric switch and to control a gate signal of the electric switch depending on the current change; a gate buffer; and at least one current source, arranged to drive the gate buffer. The current change rate sensor is connected to control the current source to thereby control the gate signal of the electric switch.
    Type: Grant
    Filed: August 21, 2009
    Date of Patent: May 24, 2011
    Assignee: Kollmorgen AB
    Inventors: Thord Agne Gustaf Nilson, Ulf Bengt Ingemar Karlsson
  • Publication number: 20110102056
    Abstract: The invention relates to a method for switching without any interruption between two winding taps (tap n, tap n+1) of a tap-changing transformer, wherein each of the two winding taps is connected to the common load output line via in each case one mechanical switch (Ds) and a series circuit, arranged in series thereto, comprising two IGBTs (Ip, In) which are switched in opposite directions.
    Type: Application
    Filed: August 27, 2008
    Publication date: May 5, 2011
    Inventors: Oliver Brueckl, Dieter Dohnal, Hans-Henning Lessmann-Mieske
  • Publication number: 20110032022
    Abstract: Techniques are disclosed for reducing off-state leakage current in a differential switching device. The techniques can be embodied, for example, in a method that includes receiving a differential input signal at a differential input of each of a primary switch and a dummy switch. In an enabled-state of the device, the method further includes passing the differential input signal to a differential output of the primary switch. In a disabled-state of the device, the method further includes canceling off-state leakage current at the differential output of the primary switch, by virtue of the dummy switch having its differential output reverse-coupled to the differential output of the primary switch. The method may further include preventing the dummy switch from passing signals other than off-state leakage signals. The techniques can be embodied, for instance, in a switching device.
    Type: Application
    Filed: August 4, 2009
    Publication date: February 10, 2011
    Applicant: BAE SYSTEMS Information and Electronic System Integration Inc.
    Inventors: Gregory M. Flewelling, Douglas S. Jansen
  • Publication number: 20110025400
    Abstract: The present invention relates to a device for connecting and breaking DC power comprising an input DC power (DC-In) arranged to be connected to a circuit board (1) and to the collector port (C) of an insulated gate bipolar transistor (IGBT). The insulated gate bipolar transistor (IGBT) is arranged to be connected to the circuit board (1). An output DC power (DC-Out) is arranged to be connected to the emitter port (E) of the insulated gate bipolar transistor (IGBT) and the circuit board (1). The circuit board (1) is arranged to be connected to the gate port (G) of the insulated gate bipolar transistor (IGBT) and the circuit board (1) is designed to monitor predetermined conditions of the input and output DC power (DC-In, DC-Out).
    Type: Application
    Filed: February 19, 2009
    Publication date: February 3, 2011
    Inventor: Terje Rogne
  • Publication number: 20110018607
    Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.
    Type: Application
    Filed: November 11, 2008
    Publication date: January 27, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sun-jin Yun
  • Publication number: 20110006830
    Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device, and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control circuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected to a current driving device and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MIT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device with a heat-preventing transistor which prevents heat generation and is connected to the MIT device.
    Type: Application
    Filed: February 27, 2009
    Publication date: January 13, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-Tak Kim, Bong-Jun Kim, Sun-Jin Yun
  • Patent number: 7800428
    Abstract: Semiconductor devices and methods are disclosed wherein a switching element or a current path is coupled to a substrate, and wherein a further element is coupled to said substrate and a control input of said switching element or said current path. Accordingly, in at least one embodiment, a semiconductor device comprises a substrate and a switching element with a control input coupled to the substrate. The semiconductor device includes a compensation element having a control input and an output. The control input of the compensation element is coupled to the substrate and the output of the compensation element is coupled to the control input of the switching element.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: September 21, 2010
    Assignee: Infineon Technologies AG
    Inventors: Joachim Pichler, Maria Giovanna Lagioia
  • Patent number: 7795949
    Abstract: A circuit including a voltage-controlled transistor to be switched. A first transistor is switched on, mediated by a control signal, and a first current flows through a series circuit and starts to subject a control input of the voltage-controlled transistor to charge reversal. The first current brings about a first potential shift at a connecting node. A second transistor is switched on by this first potential shift and a second current therefore flows through the switching path of the second transistor into the control input of the first transistor, which amplifies the first current. The increasing charge reversal of the control input of the voltage-controlled transistor brings about a second potential shift at the connecting node, the second transistor is switched off by this second potential shift, and the first transistor remains switched on, however, and holds the voltage-controlled transistor in its new switching state.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: September 14, 2010
    Assignee: OSRAM Gesellschaft mit beschränkter Haftung
    Inventors: Klaus Fischer, Josef Kreittmayr
  • Publication number: 20100156506
    Abstract: A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 24, 2010
    Applicant: DENSO CORPORATION
    Inventors: Yukio Tsuzuki, Hiromitsu Tanabe, Kenji Kouno
  • Patent number: 7705658
    Abstract: A wave detector circuit includes: a first transistor having its base and collector connected together, the first transistor receiving an AC signal and a reference voltage at its base and collector; a second transistor having its base connected to the base of the first transistor through a resistor, the second transistor outputting a detected voltage at its collector; and a diode-connected temperature compensation transistor connected between ground potential and the base and the collector of the first transistor.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: April 27, 2010
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazuya Yamamoto, Miyo Miyashita, Takayuki Matsuzuka
  • Publication number: 20100079196
    Abstract: A driver circuit is provided for enabling a transistor collector-emitter path to be used as a broadband periodic switch. The broadband driver circuit controls the magnitude of the transistor base-emitter current in order to enable a CLOSED switch state and to simultaneously control the magnitude of the transistor base-emitter reverse-bias voltage in order to enable the OPEN-switch state. The precise control of these parameters minimizes base-charge storage and prevents reverse-breakdown failure.
    Type: Application
    Filed: September 29, 2008
    Publication date: April 1, 2010
    Inventor: Donald H. Steinbrecher
  • Patent number: 7679410
    Abstract: A driver circuit is provided for enabling a transistor collector-emitter path to be used as a broadband periodic switch. The broadband driver circuit controls the magnitude of the transistor base-emitter current in order to enable a CLOSED switch state and to simultaneously control the magnitude of the transistor base-emitter reverse-bias voltage in order to enable the OPEN-switch state. The precise control of these parameters minimizes base-charge storage and prevents reverse-breakdown failure.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: March 16, 2010
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Donald H. Steinbrecher
  • Publication number: 20100019830
    Abstract: A component with a functionally-configurable circuit arrangement, has a first switch group with a voltage-dependent switching on or off of a data line and at least one second switch group generating two discrete output voltages separated by an increase in voltage and the switch states for the discrete output voltages may be stored in non-volatile memory. The switching on or off of the data line is determined by the switch state of the first switch group and a third switch group (11) is provided to increase the voltage increase between the first switch group (17) and the second switch group (3).
    Type: Application
    Filed: July 19, 2006
    Publication date: January 28, 2010
    Applicant: Siemens Aktiengesellsschaft
    Inventors: Joachim Bangert, Markus Köchy, Christian Siemers