Temperature Patents (Class 327/512)
  • Patent number: 12362741
    Abstract: A driver can be configured to provide sensed phase currents as feedback to a controller to indicate the output currents from each phase of a switch mode power supply (SMPS). The driver can be configured to temperature compensate the sensed currents in one of two ways. If a temperature sensor is directly coupled to the driver, then the driver may be configured to temperature compensate the sensed currents from each phase based on a temperature measurement made by the temperature sensor. If a temperature sensor is not directly coupled to the driver, then the driver may be configured to temperature compensate the sensed current from each phase based on a temperature signal received from a bus coupled to the driver. The bus can communicate the temperature signal so that multiple drivers can utilize one temperature sensor.
    Type: Grant
    Filed: March 21, 2024
    Date of Patent: July 15, 2025
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Paul J. Harriman, Thomas Patrick Duffy, James George Hill, Michael Scott Lay, Margaret Spillane
  • Patent number: 12339175
    Abstract: Disclosed are a temperature measurement circuit and method. The circuit includes a first temperature sensing circuit, a second temperature sensing circuit and a data processing unit. The first temperature sensing circuit is configured to generate a first measurement signal for characterizing a temperature based on an inputted first current signal, a magnitude of the first current signal being correlated to temperature. The second temperature sensing circuit is configured to generate a second measurement signal for characterizing the temperature based on an inputted second current signal, the second current signal being independent of temperature. The data processing unit is configured to determine a current temperature based on a first characteristic parameter corresponding to the first measurement signal and a second characteristic parameter corresponding to the second measurement signal.
    Type: Grant
    Filed: May 4, 2022
    Date of Patent: June 24, 2025
    Assignee: Lemon Inc.
    Inventors: Chuang Zhang, Shan Lu, Junmou Zhang, Yimin Chen, Jian Wang, Yuanlin Cheng
  • Patent number: 12320714
    Abstract: Disclosed are a CMOS temperature sensor for measuring a temperature and an operating method thereof. According to an embodiment, the CMOS temperature sensor for measuring the temperature may include a readout circuit that outputs a readout value by comparing a voltage value at a first end of a capacitor charging a charge based on a proportional current proportional to a temperature with an inverse proportional voltage inversely proportional to the temperature or comparing a voltage value at a second end of the capacitor formed at the other side of the first end with a ground voltage; and a control unit that determines a temperature based on an oscillation period of the readout value output from the readout circuit.
    Type: Grant
    Filed: November 16, 2021
    Date of Patent: June 3, 2025
    Assignee: SOLIDVUE, INC.
    Inventors: Seong Jin Kim, Chang Yong Shin
  • Patent number: 12288855
    Abstract: A battery module as provided includes a battery, a wiring harness board, a circuit board, a compressing piece and a temperature acquisition assembly. The battery includes a top cover. The wiring harness board is arranged on an outer side of the top of the top cover. The circuit board is arranged on a side, away from the battery, of the wiring harness board. The compressing piece is mounted on the wiring harness board. The temperature acquisition assembly includes a thermistor, and the thermistor is electrically connected to the circuit board. The compressing piece compresses the thermistor of the temperature acquisition assembly, so that the thermistor compresses the top cover. The temperature acquisition assembly acquires a temperature of the top cover of the battery, with a short temperature transfer path and rapid temperature transfer response.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: April 29, 2025
    Assignee: Contemporary Amperex Technology (Hong Kong) Limited
    Inventors: Gen Cao, Sihang Chen, Jihua Yao, Xiaoteng Huang
  • Patent number: 12278634
    Abstract: A resistance tracking circuit coupled to a comparator circuit is provided. The comparator circuit generates a first current and a second current according to a first control signal and a second control signal. A variable resistor generates a first reference voltage according to the first current. A capacitor generates the output voltage according to the second current. The resistance tracking circuit includes a first conversion circuit which generates the second control signal according to a third control signal, and a copy circuit including a current circuit, a second conversion circuit, and a comparator. The third current circuit generates a third current according to the first control signal. The third current is equal to the first current. The second conversion circuit provides a second reference voltage according to the third current. The comparator compares the first reference voltage and the second reference voltage to generate the third control signal.
    Type: Grant
    Filed: April 27, 2023
    Date of Patent: April 15, 2025
    Assignee: NUVOTON TECHNOLOGY CORPORATION
    Inventor: Yen-Hung Wu
  • Patent number: 12271630
    Abstract: A data recording device includes: a non-volatile memory; a high-functional non-volatile memory characterized by a processing speed faster than a processing speed of the non-volatile memory; and an access controller that controls writing of data into each of the non-volatile memory and the high-functional non-volatile memory, based on an indicator related to a temperature of the non-volatile memory. The access controller (a) writes data into the non-volatile memory when the indicator satisfies a first condition, and (b) writes data into the high-functional non-volatile memory and transfers the data from the high-functional non-volatile memory to the non-volatile memory when the indicator satisfies a second condition.
    Type: Grant
    Filed: August 17, 2023
    Date of Patent: April 8, 2025
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventor: Hideaki Yamashita
  • Patent number: 12244318
    Abstract: Disclosed herein is a temperature compensated crystal oscillator, TCXO, comprising: a crystal oscillator arrangement configured to generate an output signal of the temperature compensated crystal oscillator; and a temperature sensor arranged to generate a temperature sensor signal, wherein the output signal of the crystal oscillator arrangement is controlled in dependence on the temperature sensor signal; wherein: the temperature sensor comprises a plurality of transistor circuits; each transistor circuit comprises a transistor and a bias circuit; each transistor circuit is arranged to output a temperature signal that is dependent on the temperature of the transistor comprised by the transistor circuit; each bias circuit is configured such that the noise level in each output temperature signal is low; and the plurality of transistor circuits are arranged so that the temperature sensor signal is dependent on each of the plurality of output temperature signals.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: March 4, 2025
    Assignee: eoSemi Limited
    Inventors: Peter Trevor Beatson, George Hedley Storm Rokos
  • Patent number: 12235169
    Abstract: A temperature-sensing circuit is provided, which includes: a search-control circuit, a voltage-reference circuit, a CTAT (complementary to absolute temperature) circuit, a digital-to-analog converter (DAC) circuit, a comparison circuit, and an SAR (successive approximation register) circuit. The search-control circuit generates a reference-voltage selection signal according to a plurality of control signals. The voltage-reference circuit selects a first reference voltage from a plurality of candidate reference voltages according to the reference-voltage selection signal, and provides a second reference voltage. The CTAT circuit converts the second reference voltage into a first comparison voltage. The DAC circuit converts the first reference voltage into a second comparison voltage. The comparison circuit compares the first comparison voltage and the second comparison voltage to generate a comparison-result signal.
    Type: Grant
    Filed: December 29, 2021
    Date of Patent: February 25, 2025
    Assignee: WINBOND ELECTRONICS CORP.
    Inventor: Ju-An Chiang
  • Patent number: 12224413
    Abstract: A storage battery device including a housing, battery packs, and a heat detection member having a linear structure. The battery packs are accommodated in the housing. The battery packs are electrically connectable to each other. The heat detection member has a heat detection function and continuously extends while making thermal contact with a member located near bottom surfaces of the battery packs.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: February 11, 2025
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Atsumi Kondo, Osamu Yamazaki, Keizo Hagiwara
  • Patent number: 12209917
    Abstract: Two sets of the DC voltages are determined from among sets of DC voltages. At a first temperature, a first voltage of one of the two sets and a first voltage of the other one of the two sets surround a detection voltage that varies substantially proportionally to temperature. The detection voltage is compared with a second voltage of one of the two sets.
    Type: Grant
    Filed: September 19, 2022
    Date of Patent: January 28, 2025
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Bruno Gailhard
  • Patent number: 12209918
    Abstract: According to an example aspect of the present invention, there is provided a Coulomb blockade thermometer, comprising a Coulomb blockade thermometer sensor element, a radio-frequency generator configured to feed a radio-frequency signal to a first port of the Coulomb blockade thermometer, and a radio-frequency sensor configured to measure a response of the Coulomb blockade thermometer to the radio-frequency signal from a second port of the Coulomb blockade thermometer to perform a conductance measurement of the Coulomb blockade thermometer, and a bias voltage generator configured to sweep through a bias voltage range during the conductance measurement, performed using the radio-frequency generator, of the Coulomb blockade thermometer.
    Type: Grant
    Filed: June 23, 2022
    Date of Patent: January 28, 2025
    Assignee: Aalto University Foundation sr
    Inventors: Jukka Pekola, Yu-Cheng Chang, Bayan Karimi, Joonas Peltonen
  • Patent number: 12181350
    Abstract: Systems, devices, and methods related to temperature sensors for electronic devices are provided. An example temperature sensor device includes analog temperature sensor circuitry to generate a plurality of voltages indicative of a temperature; an analog-to-digital converter (ADC) disposed downstream of the analog temperature sensing circuitry; switched-capacitor amplifier circuitry disposed before the ADC, the switched-capacitor amplifier circuitry comprising a single-ended amplifier to amplify the plurality of voltages with respect to a common voltage; a first switch coupled between the analog temperature sensor circuitry and the switched-capacitor amplifier circuitry to provide a sampling phase and an integration phase; and digital calculation circuitry to calculate a temperature value based on the plurality of amplified voltages.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: December 31, 2024
    Assignee: ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
    Inventors: Gaurav Singh, Wreeju Bhaumik
  • Patent number: 12160236
    Abstract: The present application discloses a reference voltage circuit with temperature compensation, in which a voltage with a positive temperature coefficient is provided by a current source and an impedance device, and in the meanwhile, a voltage with a negative temperature coefficient is provided by a voltage source. Hereby, the reference voltage circuit according to the invention provides a reference voltage with temperature compensation at an output terminal.
    Type: Grant
    Filed: April 28, 2022
    Date of Patent: December 3, 2024
    Assignee: Infsitronix Technology Corporation
    Inventors: Yuan-Kai Cheng, Chung-Jye Hsu
  • Patent number: 12143099
    Abstract: A switching element driving method executed in a switching element driving device including a plurality of switching elements and a driving circuit configured to drive the plurality of switching elements, the switching element driving method including: detecting temperatures of the plurality of switching elements; calculating a switching determination temperature that serves as a reference for changing switching speeds of the switching elements from the plurality of detected temperatures; and changing the switching speeds of all the switching elements based on the switching determination temperature.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: November 12, 2024
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Yuka Okuyama, Kazushige Namiki, Keita Abe
  • Patent number: 12123787
    Abstract: An apparatus may include a transistor, a capacitor, and an operational amplifier. The transistor may have a sub-threshold voltage applied to a gate of the transistor. The capacitor configured to store a first gate-to-source voltage of the transistor while a first switch and a second switch are closed and a third switch is open. The capacitor may be charged to a first gate-to-source voltage of the transistor while the transistor is biased with a first bias current. The operational amplifier may be configured to determine a voltage difference between the first gate-to-source voltage stored in the capacitor and a second gate-to-source voltage of the transistor while the transistor is biased with a second bias current. The operational amplifier may determine the voltage difference while the third switch is closed and the first switch and the second switch are open. The voltage difference may correspond to a temperature of the transistor.
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: October 22, 2024
    Assignee: NOKIA TECHNOLOGIES OY
    Inventors: Marijan Herceg, Tomislav Matic
  • Patent number: 12108145
    Abstract: From a device mounted detachably to the image capturing apparatus, temperature information indicating a temperature in the device is obtained, and, based on the temperature information, an execution frequency of analysis processing executed by the device is controlled.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: October 1, 2024
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Shoko Naito
  • Patent number: 12091313
    Abstract: A microelectromechanical actuator, comprising: a substrate, having a surface; a conductive beam suspended parallel to the substrate, displaceable along an axis normal to the surface of the substrate; a center electrode on the substrate under the beam; a pair of side electrodes on the substrate configured, when charged, to exert an electrostatic force normal to the surface of the substrate on the beam that repulses the beam from the substrate, and exerts a balanced electrostatic force on the beam in a plane of the surface of the substrate, the center conductive electrode being configured to shield the beam from electrostatic forces induced by the side electrodes from beneath the beam, and the center electrode being configured to have a voltage different from a voltage on the beam, to thereby induce an attractive electrostatic force on the beam.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: September 17, 2024
    Assignee: The Research Foundation for The State University of New York
    Inventors: Shahrzad Towfighian, Mark Pallay, Meysam Daeichin, Ronald Miles
  • Patent number: 12074158
    Abstract: A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.
    Type: Grant
    Filed: May 12, 2023
    Date of Patent: August 27, 2024
    Assignee: Rohm Co., Ltd.
    Inventor: Naoki Takahashi
  • Patent number: 12046993
    Abstract: A semiconductor device having a load. The semiconductor device including: an output element configure to connect to the load, the output element being switchable to operate the load; a drive circuit which outputs a drive signal for driving the output element to switch; a detection circuit which compares a state signal, indicative of an operating state of the output element, with a detection threshold, to thereby detect an abnormal level of the operating state; an abnormal level notification circuit which informs an outside of the detected abnormal level; an external terminal configured to receive an external signal for adjusting the detection threshold; and a detection threshold adjustment circuit which adjusts the detection threshold on a basis of the received external signal.
    Type: Grant
    Filed: December 28, 2022
    Date of Patent: July 23, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Kei Minagawa
  • Patent number: 12040043
    Abstract: A semiconductor memory device includes a plurality of input-output pins configured to communicate with a memory controller, a command control logic, a temperature measurement circuit and an operation limit controller. The command control logic controls an operation of the semiconductor memory device based on command signals and control signals transferred from the memory controller through control pins among the plurality of input-output pins. The temperature measurement circuit measures an operation temperature of the semiconductor memory device to generate a temperature code corresponding to the operation temperature. The operation limit controller, when it is determined based on the temperature code that the operation temperature exceeds a risk temperature, controls an internal operation of the semiconductor memory device regardless of the command signals and the control signals transferred from the memory controller to thereby decrease a power consumption of the semiconductor memory device.
    Type: Grant
    Filed: April 14, 2022
    Date of Patent: July 16, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seonghoon Joo, Jaejun Lee, Ilhan Choi
  • Patent number: 12032420
    Abstract: A storage system and method for data-driven intelligent thermal throttling are provided. In one embodiment, the storage system comprises a memory and a controller. The controller is configured to determine a temperature of the memory, estimate a future temperature curve based on the temperature of the memory, and determine a memory throttling delay to apply based on the estimated future temperature curve. Other embodiments are provided.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: July 9, 2024
    Assignee: SanDisk Technologies, Inc.
    Inventors: Narendhiran Chinnaanangur Ravimohan, Ankit Gupta, Sai Revanth Reddy Chappidi
  • Patent number: 12031873
    Abstract: A temperature sensor that is insensitive to process variation and mismatch is disclosed. The temperature sensor includes a PTAT voltage generator, a sampling and gain boosting circuit, a filter and a controller. The PTAT voltage generator utilizes a plurality of current sources, each of which is in electrical communication with the same diode, or diode stack. The output of the PTAT voltage generator is sampled and amplified with the sampling and gain boosting circuit. The output of the sampling and gain boosting circuit is then filtered using a low pass filter. The selection of the current mirrors, the sampling timing and other signals are provided by the controller. In some simulations, the output from the temperature sensor was accurate to within 1.5° C., using a one temperature calibration process.
    Type: Grant
    Filed: October 19, 2021
    Date of Patent: July 9, 2024
    Assignee: Silicon Laboratories Inc.
    Inventors: Peh Sheng Jue, Jeffrey L. Sonntag
  • Patent number: 12025509
    Abstract: A temperature measurement circuit for measuring a temperature using a temperature sensitive element includes a voltage control circuit configured to apply a control voltage to the temperature sensitive element. The temperature measurement circuit includes a first switching circuit configured to switch levels of the control voltage based on a current flowing through the temperature sensitive element. The temperature measurement circuit includes a conversion circuit configured to convert the current flowing through the temperature sensitive element into a voltage level corresponding to the measured temperature, by using predetermined conversion gain. The temperature measurement circuit includes a second switching circuit configured to switch values of the conversion gain based on the voltage level.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: July 2, 2024
    Assignee: MITSUMI ELECTRIC CO., LTD.
    Inventor: Kohei Shibata
  • Patent number: 12022583
    Abstract: Portable devices, systems and methods with automated heat control assembly are provided. The portable devices and systems comprise a light source, a current source, a heat control circuit, a temperature sensor and a processor. The current source is electrically coupled to the light source. The heat control circuit adapted to allow changing the current supplied to the light source. The temperature sensor adapted to measure a temperature adjacent the light source and to output an associated temperature sensor data to the processor. The processor configured to automatically adjust the current supply in the heat control circuit based on the temperature sensor data relative to a predetermined temperature threshold. The method comprises measuring a temperature adjacent a light source using a temperature sensor and automatically adjusting, using a processor, the current suppled to the light source based on the temperature sensor data relative to a predetermined temperature threshold.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: June 25, 2024
    Assignee: ASIATELCO TECHNOLOGIES, INC.
    Inventors: Junming Ding, Rayford Higginbotham, Chengping Chen
  • Patent number: 12002730
    Abstract: A plurality of semiconductor chips, a module substrate on which the plurality of semiconductor chips are mounted, a heat sink on which the module substrate is mounted, and a filler filled between the module substrate and the heat sink are included, in which the module substrate includes a heat radiating plate, and an insulating substrate on which the plurality of semiconductor chips are mounted, the heat radiating plate has a plurality of recess portions provided on a surface facing the heat sink and at least one groove, the plurality of recess portions are provided in regions corresponding to below arrangement regions of the plurality of semiconductor chips, the at least one groove is provided in a region corresponding to below a region between at least one of the plurality of semiconductor chips and an adjacent other semiconductor chip, and the filler also is filled in the plurality of recess portions.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: June 4, 2024
    Assignee: Mitsubishi Electric Corporation
    Inventor: Ikumi Fukuda
  • Patent number: 11962316
    Abstract: An analog-to-digital converter (ADC) includes a first controlled oscillator (CO) for generating at least one phase signal, and wherein the at least one phase signal generates a first output signal of the ADC; and at least one first frequency-controlled resistor (FDR) for receiving the at least one phase signal generated by the first CO, wherein the first CO and the at least one first FDR are coupled together at a first subtraction node of the ADC, and wherein the first subtraction node receives a first input signal.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: April 16, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Luis Hernandez, Ruben Garvi Jimenez-Ortiz, Andreas Wiesbauer
  • Patent number: 11920990
    Abstract: An in-vehicle temperature detection circuit includes a temperature detecting unit including a plurality of individual detecting units, each having a first resistor and a temperature detecting element connected in series between a first conductive path to which a predetermined source voltage is applied and a reference conductive path. A plurality of bipolar transistors are connected to a corresponding individual detecting units. A second conductive path is electrically connected to each of emitters of the bipolar transistors. In each bipolar transistor, a base is electrically connected to a third conductive path between the first resistor and the temperature detecting element of the individual detecting unit corresponding to the bipolar transistor. A voltage reflecting the lowest voltage among the voltages applied to the third conductive paths in the plurality of individual detecting units is applied to the second conductive path.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: March 5, 2024
    Assignees: AutoNetworks Technologies, Ltd., Sumitomo Wiring Systems, Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Ryunosuke Muraoka, Yuuki Sugisawa
  • Patent number: 11922030
    Abstract: According to one embodiment, a memory device includes a first nonvolatile memory die, a second nonvolatile memory die, a controller, and a first temperature sensor and a second temperature sensor incorporated respectively in the first nonvolatile memory die and the second nonvolatile memory die. The controller reads temperatures measured by the first and second temperature sensors, from the first and second nonvolatile memory dies. When at least one of the temperatures read from the first and second nonvolatile memory dies is equal to or higher than a threshold temperature, the controller reduces a frequency of issue of commands to the first and second nonvolatile memory dies or a seed of access to the first and second nonvolatile memory dies.
    Type: Grant
    Filed: September 13, 2022
    Date of Patent: March 5, 2024
    Assignee: Kioxia Corporation
    Inventors: Atsushi Kondo, Ryo Yonezawa
  • Patent number: 11923278
    Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: March 5, 2024
    Assignee: ROHM CO., LTD.
    Inventors: Masashi Hayashiguchi, Takumi Kanda
  • Patent number: 11846650
    Abstract: An acceleration detection device includes a first acceleration acquisition unit configured to acquire a first acceleration from a mechanical acceleration sensor a second acceleration acquisition unit configured to acquire a second acceleration from a non-mechanical acceleration sensor and a correction value calculation unit configured to calculate a correction value for correcting the first acceleration using the second acceleration.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: December 19, 2023
    Assignee: Komatsu Ltd.
    Inventors: Toru Kurakane, Ken Tagami, Junghwa Park
  • Patent number: 11843358
    Abstract: Provided are a gain compensation device and a bias circuit device. A compensation bias current is generated by the gain compensation device to compensate the gain deviation of power amplifier and improve stability of power amplifier. Through high-temperature compensation unit and low-temperature compensation unit in different gears, gain of power amplifier is compensated along with temperature changes, thereby improving feasibility of the gain compensation device. It takes small space, and the circuit only includes the circuits corresponding to high-temperature compensation unit and low-temperature compensation unit, so the circuit is relatively simple and beneficial to miniaturization.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: December 12, 2023
    Assignee: RADROCK (SHENZHEN) TECHNOLOGY CO., LTD.
    Inventors: Jinghao Feng, Jianxing Ni
  • Patent number: 11823360
    Abstract: A virtual, augmented, or mixed reality display system includes a display configured to display virtual, augmented, or mixed reality image data, the display including one or more optical components which introduce optical distortions or aberrations to the image data. The system also includes a display controller configured to provide the image data to the display. The display controller includes memory for storing optical distortion correction information, and one or more processing elements to at least partially correct the image data for the optical distortions or aberrations using the optical distortion correction information.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: November 21, 2023
    Assignee: Magic Leap, Inc.
    Inventors: Jose Felix Rodriguez, Ricardo Martinez Perez
  • Patent number: 11815409
    Abstract: A temperature sensor and a method of controlling the temperature sensor are provided. The temperature sensor includes a voltage generator suitable for generating a temperature voltage that has a voltage level determined according to a temperature and a reference voltage that has a constant voltage level independent of a change in temperature, a code generator suitable for generating an initial code based on the temperature voltage and the reference voltage, and a code calibrator suitable for generating a calibrated code based on the initial code and a calibration factor.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: November 14, 2023
    Assignee: SK hynix Inc.
    Inventor: Suk Hwan Choi
  • Patent number: 11810888
    Abstract: An electronic device includes a structured metallization layer including a plurality of contact pads that are electrically isolated from one another, and a metal clip connected in a current shunt measurement arrangement with a semiconductor device, wherein the metal clip includes first, second and third landing pads, a first bridge span connected between the first and second landing pads, and second bridge span connected between the second and third landing pads, wherein the first, second third landing pads are respectively thermally conductively attached to first, second and third contact pads from the structured metallization layer, and wherein the second mounting pad is electrically floating.
    Type: Grant
    Filed: April 7, 2022
    Date of Patent: November 7, 2023
    Assignee: Infineon Technologies AG
    Inventor: Andreas Schulz
  • Patent number: 11797042
    Abstract: Circuits, systems, and methods to switch modes based on temperature and to provide reference voltages are discussed herein. For example, a bandgap reference circuit may include one or more impedance elements and one or more switches coupled to the one or more impedance elements. The one or more switches may be controllable based on a temperature signal. The bandgap reference circuit may be configured to provide a bandgap reference voltage that is associated with less than a particular amount of voltage variation.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: October 24, 2023
    Assignee: Skyworks Solutions, Inc.
    Inventor: Bang Li Liang
  • Patent number: 11789477
    Abstract: Aspects of the present disclosure include a hybrid circuit, including a first current sink configured to sink a zero temperature coefficient (ZTC) current, a second current sink configured to sink a positive temperature coefficient (PTC) current, a first transistor configured to provide a first current, a second transistor configured to provide a second current, a third transistor configured to provide a third current mirroring the ZTC current, a fourth transistor configured to provide a sum current of the first current and the third current, and a current mirror configured provide a hybrid current mirroring the sum current.
    Type: Grant
    Filed: September 1, 2022
    Date of Patent: October 17, 2023
    Assignee: ANALOG DEVICES, INC.
    Inventors: Kevin R. Wrenner, Ruida Yun, Kenneth G. Richardson
  • Patent number: 11714108
    Abstract: A system current sensor module can accurately sense or measure system current flowing through a sense current resistor by shunting current through a gain-setting resistor and using an amplifier to measure a resulting voltage, with an output transistor controlled by the amplifier controlling current through the gain setting resistor in a manner that tends to keep the amplifier inputs at the same voltage. The resistors can be thermally coupled to maintain similar temperatures when a system current is flowing. The thermal coupling can include conducting heat from a first resistor layer carrying the current sense resistor to a thermal cage layer located beyond a second resistor layer carrying the gain-setting resistor. This preserves accuracy, including during aging.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: August 1, 2023
    Assignee: Analog Devices International Unlimited Company
    Inventors: Michael D. Petersen, Kalin V. Lazarov, Gregory J. Manlove, Robert Chiacchia
  • Patent number: 11699698
    Abstract: A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.
    Type: Grant
    Filed: August 18, 2022
    Date of Patent: July 11, 2023
    Assignee: Rohm Co., Ltd.
    Inventor: Naoki Takahashi
  • Patent number: 11664718
    Abstract: A transistor device includes a transistor and programmable controller. The controller has an output that controls operation of the transistor. The controller includes analog computing circuitry and optionally digital computing circuitry that may be used to setup the analog computing circuitry. In addition to two connectors for connecting the transistor into an external circuit, the device includes a further connector that provides an input to the controller and through which the control can be programmed post manufacture. The transistor device may be a discrete component in which transistor and controlling circuitry are held in packaging, the three connectors exposed through the packaging in order to connect the device to an external circuit.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: May 30, 2023
    Assignee: Know Moore, Ltd.
    Inventor: David Summerland
  • Patent number: 11664298
    Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: May 30, 2023
    Assignee: ROHM CO., LTD.
    Inventors: Masashi Hayashiguchi, Takumi Kanda
  • Patent number: 11644367
    Abstract: In an embodiment a semiconductor device includes a first diode and a second diode of specified sizing or biasing ratio, a negative voltage supply, a first resistor for a proportional to absolute temperature (PTAT) voltage drop, wherein the first diode is connected between the negative supply voltage and the first resistor, an array of dynamically matched current sources employing a dynamic element matching controller, wherein the first resistor is connected between the first diode and a first input of the array, and wherein the second diode is connected between the negative supply voltage and a second input of the array and a successive approximation register (SAR) feedback loop configured to drive a voltage difference to zero, wherein the voltage difference occurs between a first node present between the first resistor and the first input of the array and a second node present between the second diode and the second input of the array.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: May 9, 2023
    Assignee: SCIOSENSE B.V.
    Inventor: Fridolin Michel
  • Patent number: 11536615
    Abstract: An integrated circuit includes: a resistor terminal adapted to be coupled to a first end of a first resistor; a ground terminal adapted to be coupled to a second end of the first resistor; a second resistor in series with the first resistor and having a first end and a second end, the second end coupled to the resistor terminal; a first capacitor having a first capacitor terminal and a second capacitor terminal, the first capacitor terminal is coupled to: the first end of the second resistor via a first switch; and the ground terminal via a second switch; a second capacitor having a third capacitor terminal and a fourth capacitor terminal, the third capacitor terminal is coupled to: the first end of the second resistor via a third switch; the resistor terminal via a fourth switch; and the ground terminal via a fifth switch.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: December 27, 2022
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Bradford Lawrence Hunter
  • Patent number: 11522534
    Abstract: A compact solid state relay (7) is provided. Solid state devices (74, 75), such as Triacs or Thyristors are used to implement the relay functionality. The device is at least partially enclosed in a housing that has pins for mounting on an electronics board. A number of ā€œUā€ shaped jumpers (72) or other jumpers or wires are provided in the housing to act as heat sinks. A sub-miniature fan (70) is positioned to create an air flow over the heat sinks and dissipate heat from the device.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: December 6, 2022
    Assignee: Zonit Structured Solutions, LLC
    Inventors: Steve Chapel, William Pachoud
  • Patent number: 11515871
    Abstract: An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: November 29, 2022
    Assignee: Mavagail Technology, LLC
    Inventor: Darryl G. Walker
  • Patent number: 11508723
    Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: November 22, 2022
    Assignees: DYNEX SEMICONDUCTOR LIMITED, ZHUZHOU CRRC TIMES ELECTRIC CO. LTD.
    Inventors: Chunlin Zhu, Vinay Suresh, Ian Deviny, Yangang Wang
  • Patent number: 11499874
    Abstract: A temperature sensor configured to generate an output signal corresponding to a sensed and/or measured temperature includes: a diode including a cathode coupled to a ground node; a first capacitor including a first end coupled to the ground node; a switch circuit configured to connect a second end of the first capacitor to a positive voltage node or an anode of the diode according to a control signal; switch control circuitry configured to generate the control signal based on a reference voltage with a voltage of the anode; and an output signal generator configured to generate the output signal corresponding to the sensed temperature based on a frequency of the control signal.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: November 15, 2022
    Assignees: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Sungsik Park, Youngcheol Chae
  • Patent number: 11493388
    Abstract: An on-chip temperature sensor for generating a digital output signal representing a temperature value includes: a proportional to absolute temperature (PTAT) buffer for alternately generating a first voltage signal representing a first temperature of the PTAT buffer and a second voltage signal representing a second temperature of the PTAT buffer; an analog to digital (A/D) converter, coupled to the PTAT buffer, for converting the first voltage signal to a first digital voltage signal and for converting the second voltage signal to a second digital voltage signal; and a digital output generating block, for receiving the first digital voltage signal and the second digital voltage signal, and comparing a difference between the first digital voltage signal and the second digital voltage signal with a digital voltage reference signal to generate the digital output signal.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 8, 2022
    Assignee: Himax Imaging Limited
    Inventors: Sang Hyeon Lee, Hack soo Oh
  • Patent number: 11482923
    Abstract: A system includes a controller for a DC to AC inverter including a processor configured to execute instructions to perform operations including: generating a first pulse for a first phase of a center-aligned PWM signal to alternately activate a first phase switch of a first switch group of the inverter for a first duration and a first phase switch of a second switch group of the inverter for a second duration within a period of the PWM signal; and generating a second pulse for a second phase of the PWM signal to alternately activate a second phase switch of the first switch group of the inverter for a third duration and a second phase switch of the second switch group of the inverter for a fourth duration within the period of the PWM signal, wherein the second duration is different from the third duration during a stall condition.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: October 25, 2022
    Assignee: DELPHI TECHNOLOGIES IP LIMITED
    Inventor: John William Meyer, III
  • Patent number: 11474161
    Abstract: A power supply semiconductor integrated circuit includes an output transistor, a control circuit, a first-fault detection circuit, a second-fault detection circuit, a delay circuit, and a latch circuit. The output transistor is connected between a voltage-input terminal to which a DC voltage is input and a voltage-output terminal. The control circuit controls the output transistor. The first-fault detection circuit detects a first fault. The second-fault detection circuit detects a second fault different from the first fault. The delay circuit delays an output of the first-fault detection circuit and an output of the second-fault detection circuit. The latch circuit captures and holds an output of the delay circuit. The delay circuit includes: a constant current source for charging a delay capacitor; a discharge switch for discharging the delay capacitor; and a voltage comparator circuit that compares a charge voltage across the delay capacitor and a predetermined voltage.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: October 18, 2022
    Assignee: MITSUMI ELECTRIC CO., LTD.
    Inventors: Kohei Sakurai, Shinichiro Maki
  • Patent number: 11469224
    Abstract: A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: October 11, 2022
    Assignee: Rohm Co., Ltd.
    Inventor: Naoki Takahashi