Abstract: Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.

Abstract: A switched mode power converter is disclosed, together with a method for operating the same. The power converter is adapted to be operable in the boundary conduction mode, and operation is interruptible in the absence of any load requirement.

Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

Abstract: To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a transistor whose off-leakage current has a second temperature characteristic, a power supply control circuit that inactivates the X decoder when a temperature exceeds a first threshold during a standby state, and a power supply control circuit that inactivates the pre-decoder and the peripheral circuit when a temperature exceeds a second threshold during the standby state. According to the present invention, whether power supply control is performed on a plurality of circuit blocks is determined based on different temperatures, therefore optimum power supply control can be performed on each of circuit blocks.

Abstract: Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network sectors (B1, B2, B3) which are electrically isolated from one another by means of isolating points and to each of which a different gate voltage is fed via corresponding contacts.

Abstract: An embodiment of a bandgap voltage reference circuit for generating a bandgap voltage reference. Said embodiment comprises a current generator controlled by a first driving voltage for generating a first current depending on the driving voltage, and a first reference circuit element coupled to the controlled current generator for receiving the first current and generating a first reference voltage in response to the first current. The circuit further comprises a second reference circuit element for receiving a second current corresponding to the first current; said second reference circuit element is adapted to generate a second reference voltage in response to the second current. Said circuit further comprises a third reference circuit element for receiving a third current corresponding to the first current and generating the bandgap reference voltage in response to the third current, and an operational amplifier.

Abstract: A reference voltage generation circuit for generating a reference voltage that can adaptively depend on temperature and process includes: a comparator, having a process, temperature and voltage (PVT) insensitive reference as a first input, and a feedback of the output as a second input, for generating a voltage reference output; a first resistor, coupled to the output of the operational amplifier; a second and a third variable resistor coupled in parallel, and coupled between the first resistor and ground; and a transistor, coupled between the third variable resistor and ground.

Abstract: A temperature sensing circuit includes a temperature-dependent voltage generating block configured to generate a plurality temperature-dependent voltages having voltage levels that are changed according to temperature; and a comparing block configured to compare each voltage level of the temperature-dependent voltages with a voltage level of a predetermined voltage to output thermal codes.

Abstract: A method and circuitry for adjusting the delay of a variable delay line (VDL) in a delay locked loop (DLL) or other delay element or subcircuit on an integrated circuit is disclosed. Such delay circuitry will inherently have a delay which is a function of temperature. In accordance with embodiments of the invention, such temperature-dependent delays are compensated for by adjusting the power supply voltage of the VDL, delay element, or subcircuit. Specifically, a temperature sensing stage is used to sense the temperature of the integrated circuit, and hence the VDL, delay element, or subcircuit. Information concerning the sensed temperature is sent to a regulator which derives the local power supply voltage from the master power supply voltage, Vcc, of the integrated circuit.

Abstract: Measurement circuit components are included in an integrated circuit fabricated on a semiconductor substrate. These measurement circuits are connected to a voltage regulation circuit that provides the integrated circuit voltage source. These measurement circuits provide signals to control the voltage regulation circuit to adjust the voltage output to the integrated circuit based upon a measurement values obtained on the semiconductor device. These measurements include temperature and IR drop at locations on the semiconductor substrate, along with the frequency response of integrated circuit.

Abstract: A substrate bias control circuit includes a process voltage temperature (PVT) effect transducer that responds to a PVT effect. A PVT effect quantifier is coupled to the PVT effect transducer. The PVT effect quantifier quantifies the PVT effect to provide an output. The PVT effect quantifier includes at least one counter and a period generator. The period generator provides a time period for the counter. A bias controller that is coupled to PVT effect quantifier is configured to receive the output of the PVT effect quantifier. The bias controller is configured to provide a bias voltage. The bias controller includes a bias voltage comparator.

Abstract: A method and circuit for managing thermal performance of an integrated circuit. In accordance with an embodiment, a thermal limit circuit and a semiconductor device are manufactured from a semiconductor material, wherein the thermal limit circuit is configured to operate at a temperature level that is different from a threshold temperature in response to the thermal sensing element sensing a temperature at least equal to the threshold temperature.

Abstract: Methods and apparatus for controlling a digital power supply are disclosed. An example method includes storing a first set of coefficients for controlling a digital power supply in a memory of the digital power supply, associating the first set of coefficients with a first set of characteristics of an input voltage for the digital power supply, storing a second set of coefficients for controlling the digital power supply in the memory of the digital power supply, associating the second set of coefficients with a second set of characteristics of the input voltage, receiving a first voltage from a voltage source at the digital power supply, determining that the first voltage has the first set of characteristics, and, in response to determining that the first voltage has the first set of characteristics, applying the first set of coefficients to the digital power supply.

Abstract: A temperature sensor includes: a first oscillator that generates a first frequency signal; a second oscillator that generates a second frequency signal; a multiplexer that selectively passes the first frequency signal and the second frequency signal; and a frequency-to-digital converter that converts a frequency difference between the first frequency signal and the second frequency signal into a digital code.

Abstract: A proportional to absolute temperature (PTAT) sensor is capable of reducing a sensing error resulted from a mismatch between circuit components. The PTAT sensor includes a control unit, a sensing unit and a calculation unit. The control unit generates a control signal. The sensing unit, comprising at least a pair of circuit components having a matching relationship, senses an absolute temperature under the first connection configuration and the second connection configuration respectively to generate a first voltage value and a second voltage value, wherein the first connection configuration and the second connection configuration are decided by interchanging the circuit connections of the pair of circuit components according to the control signal. And the calculation unit, coupled to the sensing unit, calculates a PTAT voltage value according to the first voltage value and the second voltage values.

Abstract: A temperature compensation circuit for generating a temperature compensating reference voltage (VREF) may include a Bandgap reference circuit configured to generate a Bandgap reference voltage (VBGR) that is substantially temperature independent and a proportional-to-absolute-temperature reference voltage (VPTAT) that varies substantially in proportion to absolute temperature. The circuit may also include an operational amplifier that is connected to the Bandgap reference circuit and that has an output on which VREF is based. The circuit may also include a feedback circuit that is connected to the operational amplifier and to the Bandgap reference circuit and that is configured so as to cause VREF to be substantially equal to VPTAT times a constant k1, minus VBGR times a constant k2.

Abstract: An integrated circuit (IC) including a controller integrally formed on a shared die with the IC and method of operating the same to compensate for process and environmental variations in the IC are provided. In one embodiment the IC is comprised of device and sub-circuits, and the method includes: receiving in the IC electrical power and information on at least one of one or more operational parameters of the IC; and adjusting one or more operating characteristics of at least one of the devices and sub-circuits in the IC based on the received information using a controller integrally formed on a shared die with the IC. Other embodiments are also disclosed.

Abstract: A temperature sensor that can be used in semiconductor devices includes a reference voltage generator for dividing a power supply voltage and outputting a reference voltage, a compare voltage generator for outputting compare voltages with different levels depending on a change of a control signal, a temperature voltage generator for generating a temperature voltage based on the reference voltage and a threshold voltage of a MOS transistor, and a comparator for comparing an amplified temperature voltage and the compare voltage.

Abstract: A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different amount of current in response to the temperature information.

Abstract: An apparatus is provided that includes a drift trimming stage that includes a first current source providing a current with a first temperature dependency and a second current source providing a current with a second temperature dependency. The first and the second current source are coupled at a first node and configured to have equal currents at a first temperature. There is further a third current source providing a current with a third temperature dependency and a fourth current source providing a current with a fourth temperature dependency. The third current source and the fourth current source are coupled at a second node and configured to have equal currents at the first temperature. There is a first resistor coupled between the first node and a third node, a second resistor coupled between the second node and the third node. The first node and the second node are coupled to provide a combined voltage drop across the first resistor and the second resistor for reducing the offset drift.

Abstract: Provided is a semiconductor temperature sensor having satisfactory linearity of an output voltage with respect to temperature. In a semiconductor temperature sensor (1), even if the temperature increases and a leakage current is generated at bases of a PNP (8) and a PNP (9), a current which flows into emitters of a PNP (7) and the PNP (8) is not affected by the leakage current by virtue of a leakage current compensation current of a PNP (14), and thus, the linearity of the output voltage with respect to the temperature is improved and the accuracy of the semiconductor temperature sensor (1) with respect to the temperature is improved.

Abstract: A system which operates to determine temperature of an image sensor using the same signal chain that is used to detect the image sensor actual outputs. A correlated double sampling circuit is used to obtain the image outputs. That's same correlated double sampling circuit is used to receive two different inputs from the temperature circuit, and to subtract one from the other. The temperature output can be perceived, for example, once each frame.

Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.

Abstract: A temperature sensor circuit comprises a first monitor voltage generation circuit that generates a first monitor voltage with a characteristic that changes with respect to temperature; a second monitor voltage generation circuit that generates a second monitor voltage with a characteristic that changes by a variation amount different from the first monitor voltage with respect to the temperature; and a differential amplifier circuit, to which the first and second monitor voltages are inputted and that outputs the result of comparing the two voltages. Further, the differential amplifier circuit of the temperature sensor circuit is capable of switching to a first connection state, which outputs the comparison result, and to a second connection state, which outputs an offset monitor voltage that is rendered by adding the offset voltage of the differential amplifier circuit to the first or second monitor voltage or subtracting the offset voltage therefrom.

Abstract: A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator.

Abstract: A temperature detection circuit includes, a first source follower circuit supplied with a first constant current, a second source follower circuit supplied with a second constant current, and a circuit obtaining a difference between an output voltage from the first source follower circuit and an output voltage from the second source follower circuit. Measurement errors attributable to transistor threshold voltages are canceled out by obtaining a difference between output voltages.

Abstract: A reference circuit for providing a precision voltage and a precision current includes a bandgap voltage reference circuit, a positive temperature coefficient calibrating circuit, a threshold voltage superposing circuit and precision current generator interconnected in cascade. From the bandgap voltage reference circuit, a bandgap voltage is outputted as the precision voltage, and a PTAT current is outputted to the positive temperature coefficient calibrating circuit along with the bandgap voltage for generating a PTAT voltage. In response to the PTAT voltage from the positive temperature coefficient calibrating circuit, the threshold voltage superposing circuit generates a first voltage which is equal to the PTAT voltage plus a threshold voltage. Then the precision current generator outputs a reference current as the precision current in response to the first voltage.

Abstract: A temperature detection circuit has a first temperature sensor circuit that outputs a voltage having a negative temperature gradient and an absolute value and a second temperature sensor circuit that outputs a voltage having a positive temperature gradient and the same absolute value as that for the output voltage of the first temperature sensor circuit. A switch circuit conducts a switching operation in accordance with a control signal to switch between outputting the output voltage of the first temperature sensor circuit and the output voltage of the second temperature sensor circuit. A comparison circuit compares the output voltage from the first or second temperature sensor circuit with a reference voltage. A logic circuit outputs a temperature detection signal on the basis of the control signal and an output signal from the comparison circuit.

Abstract: A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.

Abstract: A system, device, and method for minimizing x-axis and/or y-axis offset shift due to internally produced as well as externally produced on chip temperature imbalances. At least one temperature gradient canceling device is disposed on a substrate including a temperature gradient sensitive device having at least one pair of sensors. Voltage signals generated by the temperature gradient canceling devices can be combined with voltage signals generated by each of the pair of sensors to account for the offset.

Abstract: A system and method for minimizing non-linearity errors induced in output drive voltage of a transmitter circuit due to on-chip process, voltage, and temperature (PVT) variations. The system including an oscillator for converting an input reference bias voltage into a clock output signal, where the input reference bias voltage varies in response to PVT variations. Also included is a counter for counting the clock output signal and generating a count value corresponding to the clock output of the oscillator. A comparison module operatively coupled to the counter compares the count value with a pre-simulated count value to generate an error signal. Based on the error signal generated by the comparison module, a correction logic adjusts an output drive signal of the transmitter circuit making it immune to PVT variations.

Abstract: A semiconductor integrated circuit includes a first circuit, a second circuit and a control circuit. The first circuit is configured by a first MOS transistor, and a threshold voltage of the first MOS transistor is a first threshold voltage. The second circuit has same logic as the first circuit, and is configured by a second MOS transistor. A threshold voltage of the second MOS transistor is a second threshold voltage, and the second threshold voltage is lower than the first threshold voltage. The control circuit makes one of the first circuit and the second circuit operate depending on a temperature of a chip. The first circuit and the second circuit are installed in a chip.

Abstract: A temperature sensor, in accordance with the principles of the invention comprises a silicon substrate. The silicon substrate includes a bandgap, an offset circuit for providing calibration offsets, and a gain block for providing an output that varies substantially linearly with changes in temperature of the substrate.

Abstract: An IGBT is disclosed which separated into two groups (first and second IGBT portioZenerns). First and second Zener diodes each composed of series-connected Zener diode parts are disposed so as to correspond to the groups respectively. Each of the first and second Zener diodes has an anode side connected to a corresponding one of first and second polysilicon gate wirings, and a cathode side connected to an emitter electrode. Temperature dependence of a forward voltage drop of each of first and second Zener diodes is used for reducing a gate voltage of a group rising in temperature to throttle a current flowing in the group and reduce the temperature of the group to thereby attain equalization of the temperature distribution in a surface of a chip. In this manner, it is possible to provide an MOS type semiconductor device in which equalization of the temperature distribution in a surface of a chip or among chips can be attained.

Abstract: Provided is a semiconductor apparatus which includes a power transistor that is placed between an input terminal and an output terminal, a temperature detection diode that has a cathode connected to the input terminal and an anode connected to the output terminal, a current amplifier that outputs a detection current generated by amplifying a backward leakage current flowing from the cathode to the anode of the temperature detection diode, a first conversion resistor that outputs an overheat detection signal generated by converting the detection current into a voltage, a gating circuit that performs gating of a control signal according to the overheat detection signal, and a driver circuit that outputs a drive signal to a control terminal of the power transistor based on an output signal of the gating circuit.

Abstract: A single-ended thermal switch, design structure, and method of sensing temperature. A circuit includes a first MOS transistor and a second MOS transistor connected in series between a first power supply and a second power supply. The circuit apparatus also includes a signal conditioner connected to a node between the first and second MOS transistors. The first MOS transistor and the second MOS transistor are configured such that a leakage current of the second MOS transistor decreases a voltage of the node below a switch point of the signal conditioner when the temperature exceeds a threshold temperature.

Abstract: A semiconductor device includes: a high VT part including a first transistor with first threshold voltage; a low VT part including a second transistor with second threshold voltage lower than the first voltage; a temperature detector which measures a temperature of the semiconductor device, determines whether the temperature is in a high temperature state where the temperature is higher than a predetermined temperature or a low temperature state where the temperature is lower than the predetermined temperature, and outputs a signal indicating the high temperature state or the low temperature state; and a controller which receives the signal indicating the high temperature state or the signal indicating the low temperature state, and performs control to cause the high VT part to operate based on the signal indicating the high temperature state and to cause the low VT part to operate based on the signal indicating the low temperature state.

Abstract: A temperature measuring system and a measuring method using the same are disclosed. The method for measuring an integrated circuit temperature includes the steps of: detecting a first difference in output voltage values between a first transistor and a second transistor by providing a first current through the first transistor and a second current through the second transistor; detecting a second difference in output voltage values between the first transistor and the second transistor by providing the second current through the first transistor and the first current through the second transistor; obtaining an average value by averaging the first difference and the second difference; and determining the temperature by multiplying the average value with a predetermined value.

Abstract: An actuator of the present invention includes a moving part, and a driving electrode which is comprised of electrode parts electrically isolated from each other and drives the moving part. A drive voltage is applied selectively to some of the electrode parts to control an electrostatic force which acts on the moving part.

Abstract: A dual temperature control circuit detects a first temperature of a first location and a second temperature of a second location. The dual temperature control circuit transforms the first temperature to a first voltage signal, and transforms the second temperature to a second voltage signal, and compares the first voltage signal and the second voltage signal to output a third voltage signal, where a controlled circuit is controlled according to the third voltage signal.

Abstract: A device including a controllable semiconductor, sensor, and controller is provided. The controllable semiconductor is associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is controllable. The sensor is in communication with the controllable semiconductor device and acquires data relating to the second operating parameter of the controllable semiconductor device. The controller is in communication with the controllable semiconductor device and the sensor, and the controller is configured to access device data associated with the controllable semiconductor, control the first operating parameter of the controllable semiconductor, and receive data from the first sensor relating to the second operating parameter.

Abstract: Semiconductor device and data outputting method of the same includes an on die thermal sensor (ODTS) configured to output temperature information by detecting an internal temperature of the semiconductor device and an output driver configured to control a slew rate depending on the temperature information and output data.

Abstract: In one embodiment, an integrated circuit is provided for detecting when a temperature reaches a specified value. The circuit includes a differential circuit block having first and second transistors. A control terminal of the first transistor is coupled to a first voltage source, and a control terminal of the second transistor is coupled to a second voltage source. The second transistor has an area larger than the first transistor. The differential circuit block compares a first current flowing into the first transistor and a second current flowing into the second transistor. The differential circuit block outputs a signal to indicate that the specified temperature has been reached when the first current equals the second current according to specified values of the first voltage source, the second voltage source, and the ratio of the areas of the first and second transistors. A single-ended circuit block amplifies the output signal of the differential circuit block to a predetermined amplitude.

Abstract: A semi-adaptive voltage scaling method and device for determining minimal supply voltages for digital electronic semiconductor circuitry, e.g., microprocessors, of electronic devices under production testing and “real” operating conditions. The SAVS operates in a closed-loop during a production test phase of the circuitry and in an open-loop mode in an application (operation) phase of the semiconductor circuitry. During production testing, a lowermost level of the supply voltage for the semiconductor circuitry is determined at one single defined temperature at which operating specifications of the circuit are met. The lowermost level is stored in a dedicated electronic memory of the circuitry together with temperature dependent parameters. Afterwards, when the digital electronic circuitry is operated in a “real” application, e.g.

Abstract: A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive element for the purpose of cancelling temperature sensitivity out of the reference voltage the bandgap generator produces. Accordingly, this same temperature-sensitive element is used in accordance with the invention as the means for indicating the temperature of the integrated circuit, without the need to fabricate a temperature sensor separate and apart from the bandgap generator. Specifically, in one embodiment, a voltage across a temperature-sensitive junction from a bandgap generator is assessed in a temperature conversion stage portion of the combined bandgap generator and temperature sensor circuit. Assessment of this voltage can be used to produce a voltage- or current-based output indicative of the temperature of the integrated circuit, which output can be binary or analog in nature.

Abstract: An integrated circuit is used to monitor and process parametric variations, such as temperature and voltage variations. An integrated circuit may include a temperature-sensitive oscillator circuit and a temperature-insensitive oscillator circuit, and frequency difference between the two sources may be monitored. In some embodiments, a parametric-insensitive reference oscillator is used as a reference to measure frequency performance of a second oscillator wherein the second oscillator performance is parametric-sensitive. The measured frequency performance is then compared to a tamper threshold and the result of the comparison is indicative of tampering.

Abstract: A three-terminal, dual-diode system is compatible with both fully differential remote and single-ended remote temperature measurement systems. Fully differential remote temperature sensor systems offer better noise immunity and can perform faster conversions with less sensitivity to series resistance than single-ended systems. The two diode system can be used with either fully differential or single-ended temperature measurement systems, which can be used when upgrading from a single-ended architecture to a fully differential architecture, and which can provide backwards compatibility to single-ended architectures for users of fully differential architectures. The simultaneous forwards and backwards compatibilities reduces development risk associated with switching from a proven architecture (e.g., single-ended) to a newer, less-proven, architecture (e.g., fully differential).

Abstract: A converter comprising a comparator having a first input operable to receive a first signal, a second input operable to receive a second signal, and an output, a switch for sinking a portion of the first signal, wherein the switch is responsive to the output, and an integrator connected to the first input, wherein the first signal is a voltage developed by the integrator when a current proportional to the absolute temperature is applied thereto. A method for measuring temperature of a device using a comparator and converting the bitstream of the comparator to a digital output is also given. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

Abstract: A method is provided for thermal electric binary logic control. The method accepts an input voltage representing an input logic state. A heat reference is controlled in response to the input voltage. The method supplies an output voltage representing an output logic state, responsive to the heat reference. More explicitly, the heat reference controls the output voltage of a temperature-sensitive voltage divider. For example, the temperature-sensitive voltage divider may be a thermistor voltage divider.

Abstract: A temperature detection circuit includes a bandgap reference voltage generation circuit, a detection output circuit, and an output conversion circuit. The bandgap reference voltage generation circuit generates a first reference voltage and causes a bias current to flow through a current path to produce a thermal voltage. The current path has a first resistor. The detection output circuit has a second resistor and causes a mirror current of the bias current to flow through the second resistor. The output conversion circuit uses a second reference voltage to convert a voltage drop across the second resistor to a predetermined output form to detect a temperature. The first and second resistors are substantially identical in temperature dependence. The second reference voltage is generated from the first reference voltage.