Abstract: A temperature sensor having one or more mirror circuits output temperature dependent output signals is disclosed in one embodiment. The temperature sensor includes a sampling circuit coupled to receive a clock signal that samples the output signals for a duration of a predetermined number of clock cycles. The temperature sensor additionally includes a phase control circuit that receives the clock signal and generates a control signal that enables subsequent sampling operations. Each subsequent sampling operation has a duration of the predetermined number of clock cycles. The control signal from the phase control circuit further enables input and output terminals of respective circuit components in the mirror circuits to be switched for each subsequent sampling operation.

Abstract: An apparatus for generating a pulse having a pulse width substantially independent of process variation in resistive and capacitive values. The apparatus includes a PTAT current source to generate a first current to charge a capacitor to produce a first voltage; a ?VGS current source to generate a second current through a resistor to produce a second voltage V2; a comparator to generate the pulse in response to the first and second voltages; and a circuit to enable the charging and discharging of the capacitor. The use of the distinct current sources (e.g., PTAT and ?VGS) enables the pulse generator to be configured substantially process independent of resistive value. The use of a MOSFET capacitor for the capacitor enables the pulse generator to be made substantially process independent of capacitive value. An additional bandgap current source in parallel with the ?VGS current source reduces the pulse width dependency on temperature.

Abstract: A temperature detection circuit includes a sensor, an integrated circuit (IC) chip, and a resistor. The sensor is operable for sensing a temperature. The IC chip can compare a sense voltage indicative of the temperature with a threshold voltage indicative of a temperature threshold to determine a temperature condition. The IC chip has a substantially constant parameter. The resistor is externally coupled to the IC chip. The IC chip maintains a current ratio, including a ratio of a first current flowing through the sensor to a second current flowing through the resistor, equal to the substantially constant parameter.

Abstract: Embodiments of the invention include a temperature sensor method for providing an output voltage response that is linear to the temperature of the integrated circuit to which the temperature sensor belongs and/or the integrated circuit die on which the temperature sensor resides. The output voltage of the temperature sensor has an adjustable gain component and an adjustable voltage offset component that both are adjustable independently based on circuit parameters. The inventive temperature sensor includes an offset circuit that diverts a portion of current from the scaled PTAT current before the current is sourced through the output resistor. The offset circuit includes a bandgap circuit arrangement, a voltage to current converter arrangement, and a current mirror arrangement that are configured to provide a voltage offset adjustable based on independent circuit parameters such as resistor value ratios and transistor device scaling ratios.

Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.

Abstract: A simple voltage detection circuit has few circuit elements, but provides a voltage output that is substantially temperature insensitive. The voltage detection circuit includes a diode-connected transistor, a cascode-connected transistor, as well as first and second resistors coupled between ground and a ramped power supply voltage. The diode-connected transistor exhibits a negative temperature coefficient. The on resistance of the cascode-connected transistor increases with temperature and thus the voltage dropped across the cascode-connected transistor also increases with temperature. By correctly sizing the cascode-connected device, the negative and positive temperature coefficients of the diode-connected and cascode-connected devices can be substantially cancelled out.

Abstract: The invention relates to a method for obtaining temperature values from at least two thermal sensors arranged on resources within a three-dimensional die structure determining at least a partial three-dimensional temperature distribution for said die structure and controlling activity of said resources of said dies in response to said three-dimensional temperature distribution.

Abstract: To compensate for changes in temperature, a pair of bipolar transistors is connected to a voltage divider and receives a differential voltage that varies with temperature. The voltage divider includes a set of resistors placed in parallel. The set of resistors has a resistance that changes with temperature. As the resistance changes with temperature, the differential voltage provided by the voltage divider changes in proportion to a change in thermal voltage.

Abstract: A temperature detection circuit has a temperature sensor circuit whose output voltage changes with a variation in temperature. A reference voltage circuit generates a reference voltage. A comparator has an output terminal and compares an output voltage from the temperature sensor circuit with the reference voltage to generate one of a temperature detection signal and a temperature non-detection signal, the comparator having an output terminal. An operation preventing circuit is connected with the output terminal of the comparator such that immediately after activation of a power supply to the temperature detection circuit, the comparator generates the temperature non-detection signal.

Abstract: A proportional to absolute temperature (PTAT) sensor is capable of reducing a sensing error resulted from a mismatch between circuit components. The PTAT sensor includes a control unit, a sensing unit and a calculation unit. The control unit generates a control signal. The sensing unit, comprising at least a pair of circuit components having a matching relationship, senses an absolute temperature under the first connection configuration and the second connection configuration respectively to generate a first voltage value and a second voltage value, wherein the first connection configuration and the second connection configuration are decided by interchanging the circuit connections of the pair of circuit components according to the control signal. And the calculation unit, coupled to the sensing unit, calculates a PTAT voltage value according to the first voltage value and the second voltage values.

Abstract: A level detector, a voltage generator, and a semiconductor device are provided. The voltage generator includes a level detector that senses the level of an output voltage to output a sensing signal and a voltage generating unit that generates the output voltage in response to the sensing signal. The level detector may include a first reference voltage generator configured to divide a first voltage and to output a first reference voltage, a second reference voltage generator configured to divide a second voltage in response to the output voltage and to output a second reference voltage that varies as a function of temperature, and a differential amplifier configured to receive the first and second reference voltages and to output a sensing signal in response to a sensing voltage generated by amplifying a difference between the first and second reference voltages.

Abstract: Methods and apparatus for a fully isolated NPN-based temperature detector are disclosed. A disclosed method to determine the temperature of a circuit comprises generating a first current that increases as temperature increases, generating a second current that decreases as temperature increases, and detecting the temperature by receiving a first and second signal based on the first and second currents to determine whether the temperature exceeds at least one temperature threshold.

Abstract: A converter comprising a comparator having a first input operable to receive a first signal, a second input operable to receive a second signal, and an output, a switch for sinking a portion of the first signal, wherein the switch is responsive to the output, and an integrator connected to the first input, wherein the first signal is a voltage developed by the integrator when a current proportional to the absolute temperature is applied thereto. A method for measuring temperature of a device using a comparator and converting the bitstream of the comparator to a digital output is also given. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

Abstract: An exemplary temperature measurement device includes a reference voltage source, a three-wire thermal resistor, a voltage drop amplifier, an operational amplifier and compensation resistors. By using connecting wires with resistance values of the compensation resistors, a relation between an output signal and a resistance of the thermal resistor gives rise to a monotonous function, which is independent of the resistances of the connecting wires. After A/D conversation of an output signal, the resistance of the thermal resistor and a temperature can be calculated based on known functions. Therefore, within an entire measurement range and any length of cable, an influence of the wire resistances can be compensated without switches or jumpers.

Abstract: A temperature detector includes a plurality of temperature sensors each configured to generate a voltage signal in accordance with sensed temperature and output the voltage signal, a plurality of storage circuits corresponding to the respective temperature sensors and each configured to store a signal level input to the storage circuit and output the stored signal level in response to a control signal, and a control circuit configured to exclusively select one of the voltage signals output from the respective temperature sensors, compare the selected voltage signal with a predetermined reference voltage, and store the selected voltage signal into the corresponding storage circuit sequentially in response to the control signal.

Abstract: The present invention implements a software controlled thermal feedback system for battery charging circuitry in portable devices, specifically in cellular telephones. The charging hardware block is integrated into a mixed-signal analog base-band (ABB) circuit. In addition to standard function controls, integrated within the ABB are silicon temperature sensors used to monitor the temperature of any silicon components integrated on the ABB and detect any temperature change due to thermal heating. The temperature value is passed to the digital base band (DBB) circuit. Here, a microcontroller is programmed to perform power management functions relating to the ABB. Thermal control software, implemented on the DBB microcontroller, monitors the silicon temperature of the ABB and adjusts the power levels on the ABB accordingly to provide a controlled chip temperature.

Abstract: A temperature sensing circuit using a delay locked loop and a temperature sensing method. The temperature sensing circuit includes a locked delay unit for receiving an external clock and generating a locked delay pulse keeping a constant delay amount regardless of temperature. A variable delay unit may have a chain structure of a plurality of delay cells depending upon temperature. The variable delay unit may receive the external clock and generate variable delay pulses having respectively different delay amounts based on temperature. A decision control unit is configured to sense a determination temperature by using a phase difference between one selected from the variable delay pulses and the locked delay pulse. Accordingly, an unnecessary time and cost causable by temperature compensation can be reduced, and an automatic temperature compensation and a precise temperature sensing operation can be obtained.

Abstract: A method is provided for the electronic processing of analog signals in thermaltronic device. The method accepts an analog input signal, e.g., an AC signal, at a thermaltronic device input and generates a thermal electric (TE) temperature having a first transfer function responsive to the input signal. As opposed to having a digital response, the transfer function is either linear or logarithmic. An analog output signal, e.g., an AC signal, is generated having a second transfer function responsive to the TE, which is likewise either linear or logarithmic.

Abstract: In an embodiment, a current source having a piece-wise linear relationship between current and temperature is provided. The current source includes a first current source to provide current based on a first current-temperature relationship. The current source further includes a second current source coupled in parallel to the first current source. The second current source is to provide current based on a second current-temperature relationship. The current source further includes first mirroring circuitry to mirror a sum of the first current source and the second current source to an output current source. The current source also includes second mirroring circuitry to mirror the sum of the first current source and the second current source for comparison with a third current source. The third current source provides a minimum current magnitude and the third current source is coupled to the second current source to control output of the second current source.

Abstract: An apparatus and method for canceling variations in the beta for a bipolar junction transistor so that the diode equation can be employed to accurately measure the temperature of the transistor based at least in part on a ratio of two target collector currents and two measurements of the base-emitter voltage of the transistor. If the determined collector current of the transistor is relatively equivalent to one of the first and second target collector currents, the transistor's base-emitter voltage is measured and stored. An analog feedback circuit can be employed to change the determined collector current to be relatively equivalent to the first and second target collector currents. The analog feedback circuit can include an optional sample and hold component to further reduce power consumption and reduce noise. A digital circuit can be employed to change the determined collector current to be relatively equivalent to the first and second target collector currents.

Abstract: A dynamic thermal management system regulates heat dissipation of a system or device including a power supply and an amplifier. The heat dissipation from the power supply and amplifier are regulated to distribute heat more evenly across a heat sink shared by the amplifier and the power supply.

Abstract: A PN-junction temperature sensing apparatus for applying input signals to a semiconductor device and measuring temperature-dependent output signals has an odd number of current sources (1, 2, n) switches (5, 6, 7) with selectable outputs to connect the current sources (5, 6, 7) with a thermal sensor (12) or a sink diode (13) and an A/D converter (17) to digitize the measured voltage of the thermal sensor (12). A digital processor (18) controls the switches (5, 6, 7) and stores the digitized voltage values in a memory. Provided algorithms allow the usage of these values to provide a calibrated measurement of temperature and also sensor life estimation.

Abstract: A temperature-sensor circuit includes: a transistor having an emitter that is grounded, a collector, and a base; a first resistor having a first end and a second end, the first end being coupled with the collector; and a second resistor having a third end and a fourth end, the third end being coupled with the second end of the first resistor. A junction joining the first resistor and the second resistor is coupled with the base.

Abstract: A reference voltage circuit which is less dependent on semiconductor process variations compared to bandgap based reference voltage circuits. The circuit comprises a first amplifier having an inverting input, a non-inverting input and an output. A current biasing circuit provides first and second PTAT currents, and a CTAT current. The CTAT current is equal in value to the second PTAT at a first predetermined temperature and opposite in polarity. A first load element is coupled to the non-inverting input of the first amplifier and arranged for receiving the first PTAT current such that a PTAT voltage is developed across the first load element. A feedback load element is coupled between the inverting input and the output of the amplifier for receiving the summation of the CTAT current and the second PTAT current.

Abstract: A temperature measuring device includes an IPTAT generator for generating an IPTAT for generating a band gap reference voltage, and a voltage forwarder for generating an analogous temperature voltage corresponding to a mirror current which is a mirrored current of the IPTAT, thereby permitting to embody the temperature measuring device with SOC techniques using a digital CMOS process such that the temperature measuring device occupies small overall area.

Abstract: A semiconductor integrated circuit (IC) acts as a controller of a heating-controlled device or appliance. A heating body has a positive temperature coefficient and acts as both a heating element and a temperature sensor. A Silicon-Controlled Rectifier (SCR) switches AC current to the heating body to increase its temperature. When the SCR switches off, temperature sensing is performed using a sampling resistor, isolation diode, voltage comparator, and switch for a low-voltage DC supply are formed on an integrated circuit that has a first circuit branch and a second circuit branch. A compensation diode and a compensation resistor can be added in parallel to reference resistors. The compensation diode compensates for the forward voltage drop of the isolation diode that would otherwise create an inaccurate temperature measurement. The diodes have the same temperature response, allowing for a more accurate temperature measurement over a full temperature range of the sensorless appliance.

Abstract: Temperature-compensation network embodiments are provided to generate compensation signals which may be useful in improving the performance of a variety of important systems. An embodiment includes a limit current mirror configured to provide a limit current, a current generator to provide a slope current whose magnitude varies with temperature, and an output current mirror positioned to receive the limit current and the slope current and configured to provide a compensation current. In addition, a floating voltage reference is provided for use in various networks which include the temperature-compensation networks. The temperature-compensation networks may be used to improve performance in systems such as a panel driver which provides turn-on and turn-off gate voltages to transistors in liquid crystal displays.

Abstract: Provided is a temperature detection circuit capable of preventing malfunction, which may occur when power is turned on. A switch circuit for giving such a potential that a comparator detects a low temperature is provided at an output terminal of a temperature sensor circuit. A switch circuit for giving such a potential that the comparator detects a low temperature is provided at an output terminal of a reference voltage circuit. When the power is turned on, each of the switch circuits is set by a switch control circuit such that the comparator detects a low temperature.

Abstract: A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.

Abstract: A temperature sensor includes an open-loop delay line comprising plural delay cells and a multiplexer configured to select a first number of the plural delay cells; a delay-locked loop comprising plural delay cells and a multiplexer configured to select a second number of the plural delay cells; a clock coupled to an input of the open-loop delay line and to an input of the delay-locked loop; a detector having a first input coupled to an output of the open-loop delay line and a second input coupled to an output of the delay-locked loop; and a finite state machine configured to detect a transition in the output of the phase detector.

Abstract: The disclosure provides methods and apparatuses of measuring a temperature. A method of measuring a temperature can include generating a time varying signal that varies with time in a known manner, such as having a repeating sawtooth waveform. Further, the method can include generating a first intersecting signal that intersects with the time varying signal at a first time, and generating a second intersecting signal that varies with temperature and intersects with the time varying signal at a second time. Subsequently, the method can construct a pulse signal having a first edge corresponding to the first time and a second edge corresponding to the second time, with the pulse signal having a width corresponding to the temperature.

Abstract: Provided is a temperature sensor capable of performing more precise temperature measurement compared to conventional ones, even when manufacturing fluctuations are present in semiconductor elements forming a circuit for generating a temperature-dependent current.

Abstract: A temperature compensation circuit includes a voltage generator, a comparator and an emulation cell array. The voltage generator provides a predetermined voltage and a reference voltage. The comparator has a first terminal for receiving the predetermined voltage, and a second terminal for receiving the reference voltage. The emulation cell array is coupled to the first terminal of the comparator. When a voltage of the first terminal of the comparator is discharged, via the emulation cell array, to be lower than the reference voltage, the comparator outputs a read timing control signal to control a sense amplifier to perform a sensing operation.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: Provided is a sensor circuit that is small in circuit scale, but is capable of temperature compensation. A reference voltage circuit (BL1) which compensates a temperature includes only a voltage divider circuit, and hence the sensor circuit is small in circuit scale. The sensor circuit is also capable of temperature compensation because temperature changes of reference voltages (VTH11 and VTH12) and reference voltages (VTH21 and VTH22) match a temperature change of an output signal (OUTA) of an amplifier circuit (AMP1) which is caused by a temperature change of an output signal of a Hall element (HAL1).

Abstract: The invention relates to a measuring device, in particular a temperature measuring transducer, comprising an electrical resistor, which alters its value based on a chemical or physical variable that is to be measured and which is connected to an evaluation device via at least three lines. Said evaluation device checks the lines for line breaks and if such a break has occurred, switches from a four-wire circuit to a three- or two-wire circuit as required, in order to permit the continuation of the measuring operation. This improves the reliability of the measuring device.

Abstract: A semiconductor device includes: a transistor having a first electrode coupled to a first power source node to which a first power source voltage is supplied, and a second electrode, and supplying a reference current to a temperature detection element; a diffused resistor including a first semiconductor region having a potential-fixing node coupled to the first power source node, and a second semiconductor region having a first resistor node coupled to the second electrode of the transistor and a second resistor node coupled to a second power source node to which a second power source voltage is supplied, and formed at a surface of the first semiconductor region; and a leakage current correction circuit for allowing a current having approximately the same magnitude and the same direction as a magnitude and a direction of a current flowing via the potential-fixing node and the second resistor node, to flow not via the diffused resistor but via the transistor.

Abstract: An apparatus for compensating temperature changes in a temperature associated with a compensated device includes: (a) An input circuit having a first input locus for receiving a temperature-indicating signal and a second input locus for receiving a sign-indicating signal. The temperature-indicating signal indicates magnitude of the temperature. The sign-indicating signal indicates a first sign when a control signal is greater than a predetermined value and indicates a second sign when the control signal is less than the predetermined value.

Abstract: A temperature-compensated internal voltage having a desired compensation range is generated with a sufficient controllability and stability. A temperature characteristic adding circuit generates a standard voltage having temperature dependence from a reference voltage not having temperature dependence. The standard voltage is A/D-converted and then added with standard code information (TN_VREF <4:0>) which specifies the level of the internal voltage. The additional value (TN_VREF2 <4:0>) is D/A-converted to generate an offset voltage having temperature dependence. The internal voltage of a desired level is generated based on the offset voltage.

Abstract: An apparatus for adjusting a first signal with respect to a second signal includes: (a) A first converter receiving the first signal and employing n first converting elements for digitally converting the first signal to at least one first signal element. (b) A second converter coupled with an output, receiving the second signal and employing n second converting elements for digitally converting the second signal to a second representative signal presented at the output. (c) An adjusting element coupled with each of selected of the first converting elements. Each adjusting element is coupled with the output and cooperates with the connected selected element to present a corrected signal element to the output. The output presents an aggregate output signal including contributions from the second representative signal and each corrected signal element. Adjusting is effected by altering at least one corrected first signal element presented to the output.

Abstract: A system may include biasing of diodes of a temperature sensor disposed in an integrated circuit die using a current from an off-die current source, generation of a voltage based on the current and a temperature of the integrated circuit die, and determination of a first temperature based on the voltage. Such a system may further include amplification of the voltage using an oscillator and a chopper stabilizer, determination of a first amplified voltage associated with a first state of the oscillator and a second amplified voltage associated with a second state of the oscillator, and determination of a third voltage based on the first amplified voltage and the second amplified voltage, wherein determination of the first temperature based on the voltage comprises determination of the first temperature based on the third voltage.

Abstract: In a method for operating a power semiconductor circuit a power semiconductor chip is provided which includes a power semiconductor switch with a first load terminal and with a second load terminal. Further, a first temperature sensor which is thermally coupled to the power semiconductor switch and a second temperature sensor are provided. The power semiconductor switch is switched OFF or kept switched OFF if the temperature difference between a first temperature of the first temperature sensor and a second temperature of the second temperature sensor is greater than or equal to a switching-OFF threshold temperature difference which depends, following an inconstant first function, on the voltage drop across the power semiconductor switch between the first load terminal and the second load terminal.

Abstract: Methods and systems for producing a digital temperature reading are provided. In an embodiment, one or more current sources and one or more switches are used to selectively provide a first amount of current (I1) and a second amount of current (I2) to the emitter of a transistor (Q1), during different time slots of a time period, to thereby produce a first base-emitter voltage (Vbe1) and a second base-emitter voltage (Vbe2), where I1=I2*M, and M is a known constant. An analog-to-digital converter (ADC) digitizes analog signals representative of the magnitudes Vbe1 and Vbe2. A difference is determined between the magnitudes of Vbe1 and Vbe2. A digital calculator produces a digital temperature reading (DTR) based on the difference between the magnitudes of Vbe1 and Vbe2.

Abstract: The invention relates to operating an Integrated Circuit (IC). The present inventor has assessed that IC systems may suffer from limited lifetime e.g. due to overheating. Among others the invention discloses a method of operating an IC (304), the method comprising inputting power to the IC in bursts (102, 108, 116), sensing (118) an IC temperature using a temperature sensor (306), operating the IC by controlling the power (316) to be outputted by the IC during a burst (108, 116) in dependence of the sensed IC temperature compared to a reference IC temperature (318) using a controller (202), wherein the IC temperature is obtained at a predetermined moment prior to a start (612) of a burst (108, 616), and the IC is operated by setting (120) an allowable power (106) to be outputted by the IC prior to the start of said burst (108).

Abstract: A bias controller which can adjust a bias voltage of a FET without accidentally setting the bias voltage to a voltage which damages the FET, is provided. The bias controller includes temperature detector 351 configured to detect ambient temperature of FET (Field Effect Transistor) 12, 1st voltage generator 2 configured to generate a voltage signal for temperature compensating of a positive voltage based on an output of temperature detector 351, 2nd voltage generator 3 configured to generate a bias voltage signal of a positive voltage, and operational amplifier 33 and 34. Each operational amplifier 33 and 34 is individually configured to add the voltage signal for temperature compensation and the bias voltage signal, and to perform inverting amplification to generate the bias voltage of negative voltage to be applied to FET 12 and 22.

Abstract: An embodiment of the invention relates to a temperature-sensing device and a related method. In an embodiment, the device senses a temperature with a first sensing circuit configured to assert a signal when temperature is above a first temperature threshold level, and a second sensing circuit configured to substantially disable a bias current that powers the first sensing circuit when a sensed level of temperature is below a second, lower temperature threshold level. Accordingly, the device is able to draw substantially reduced current from a power source when the sensed temperature level is less than the second threshold level. Other physical parameters such as strain or pressure may also be sensed using the same technique.

Abstract: This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.

Abstract: Provided are an IC and a method for automatically tuning process and temperature variations. The IC includes: a test circuit unit including test circuit elements having identical element values and variations to a tuning-targeted circuit element and at least one reference circuit element having a smaller variation than the tuning-targeted circuit element; a comparator that obtains a difference between intensities of first and second signals detected from the test circuit unit; and a tuning unit that tunes the variation of the tuning-targeted circuit element according to the difference between the intensities of the first and second signals. Thus, process and temperature variations of a circuit element can be detected and accurately tuned with respect to the circuit element itself. Also, the process and temperature variations can be tuned inside an IC. Thus, the time required for tuning the process and temperature variations can be reduced.

Abstract: A process variable transmitter for measuring a temperature of a process includes a first, a second, third, and fourth terminal configured to couple to the temperature sensitive element. Measurement circuitry measures an electrical parameter between a pair of the terminals. A microprocess identifies a location of the temperature sensitive element coupled to at least two of the terminals based upon an electrical parameter measured by the measured circuitry between two terminals. In another configuration, the process variable transmitter measures temperature of a process using a thermocouple. A heating element is configured to heat terminals coupled to the thermocouple. A microprocessor determines polarity of the thermocoupled based upon a measured electrical parameter between the terminals in response to applied heat.

Abstract: An integrated circuit having a temperature sensitive circuit (TSC) to generate a signal indicative of the substrate temperature near the TSC. The integrated circuit has circuitry configured to receive a TSC signal from at least one TSC and to convert the TSC signal to a signal indicative of the integrated circuit's temperature. The thermal control circuit compares the integrated circuit temperature to a threshold and produces a corrective action signal when the temperature exceeds the threshold. The corrective action signal is provided to corrective action circuitry preferably configured to modify the operation of the IC to reduce the IC temperature in proximity to the corresponding TSC.