Abstract: A temperature-current transducer includes first and second voltage dividers, with the first voltage divider including a thermistor in an environment. An operational amplifier has a first input coupled to an intermediate node of the first voltage divider, and a second input coupled to an intermediate node of the second voltage divider. A cascode stage is configured to be biased in a conduction state and is controlled by the operational amplifier. The cascode stage includes a first current terminal coupled to the intermediate node of the second voltage divider. A current mirror is coupled to a second current terminal of the cascode stage, and is configured to mirror on an output line current flowing through the cascode stage that is representative of temperature differences between a temperature in an environment of the thermistor and a reference temperature.

Abstract: A substrate bias control circuit includes a process voltage temperature (PVT) effect transducer that responds to a PVT effect. A PVT effect quantifier is coupled to the PVT effect transducer. The PVT effect quantifier quantifies the PVT effect to provide an output. The PVT effect quantifier includes at least one counter and a period generator. The period generator provides a time period for the counter. A bias controller that is coupled to PVT effect quantifier is configured to receive the output of the PVT effect quantifier. The bias controller is configured to provide a bias voltage. The bias controller includes a bias voltage comparator.

Abstract: A current-voltage conversion circuit of a current correcting unit having a current detecting terminal connected to a sense terminal of a power semiconductor device converts a sense current into a voltage and detects the voltage. A temperature detecting unit detects the ambient temperature of the power semiconductor device, and a correction unit performs a predetermined operation for correcting a characteristic difference due to the temperature on the basis of the detected temperature and outputs a control signal to a variable voltage source. The variable voltage source changes an output voltage on the basis of the output control signal and adjusts the potential of the sense terminal of the power semiconductor device on the basis of the changed voltage value. In this way, the characteristic difference between a main region and a sense region of the power semiconductor device is corrected.

Abstract: A voltage reference is produced from PTAT, CTAT, and nonlinear current components generated in isolation from each other and combined to create the voltage reference.

Abstract: An integrated circuit is provided with a set of sensors for scaling voltage based on performance of the integrated circuit. The set of sensors are monitored, and sensor provides an output value indicative of a performance metric of the integrated circuit. The output values from the set of sensors are combined using a calibrated model to determine when a threshold value is reached. A change to an operating voltage for a portion of the integrated circuit is initiated in response to reaching the threshold.

Abstract: A temperature compensation circuit, applied on a metal oxide semiconductor (MOS) transistor, with a threshold voltage varying with respect to a temperature value of the MOS transistor, for having the MOS transistor corresponding to an equivalent threshold voltage substantially with a constant value throughout a temperature range, comprises a voltage generator. The voltage generator provides a voltage proportional to absolute temperature (VPTAT) to drive the body of the MOS transistor in such way that a variation of the threshold voltage due to temperature variation of the MOS transistor is substantially compensated with a variation of the threshold voltage due to body-source voltage variation of the MOS transistor, so that the MOS transistor corresponds to the equivalent threshold voltage that is temperature invariant.

Abstract: An temperature sensor circuit is disclosed. In one embodiment, the temperature sensor comprises an input circuit with a current mirror for forcing a current down a reference stage and an output stage. The reference stage and the output stage include P-N junctions (e.g., using bipolar transistors) with differing junction potentials. By tailoring the resistances in the reference and output stages, the input circuit produces two output voltages, one of which varies predictably with temperature, and one which is stable with temperature. The input circuit is preferably used in conjunction with an amplifier stage which preferably receives both the temperature-sensitive and non-temperature-sensitive outputs. Through various resistor configurations in the amplifier stage, the output of the temperature sensor can be made to vary at a higher sensitivity than produced by the temperature-sensitive output of the input circuit.

Abstract: A temperature compensation circuit may include a temperature coefficient generator configured to generate a first signal and a second signal, wherein the first signal is proportional-to-absolute-temperature (ptat) and the second signal in negatively-proportional-to-absolute temperature (ntat), a first programmable element configured to multiply at a first programmable ratio an amplitude of a third signal having a negative temperature coefficient from a first temperature to a second temperature, and a second programmable element configured to multiply at a second programmable ratio an amplitude of a fourth signal having a positive temperature coefficient from the second temperature to a third temperature.

Abstract: A voltage reference is produced from PTAT, CTAT, and nonlinear current components generated in isolation from each other and combined to create the voltage reference.

Abstract: A controlling method is provided for preventing a solid state drive from being operated at a high temperature. The solid state drive includes a controlling circuit, a temperature detecting circuit and a plurality of dies. The dies are divided into n groups and accessed by the controlling circuit through n IO buses. The controlling circuit is in communication with the temperature detecting circuit for detecting a temperature of the solid state drive. The controlling method includes the following steps. Firstly, a judging step is performed to judge whether the temperature of the solid state drive is higher than a predetermined temperature. If the temperature of the solid state drive is higher than the predetermined temperature, the frequencies of n clock signals in the n IO buses are decreased.

Abstract: A semiconductor device includes: a resistance R whose resistance value varies in response to a substrate temperature variation; a resistance corrector that is coupled in series with the resistance R and switches its resistance value by a preset resistance step width to suppress a resistance value variation of the resistance R; a first voltage generator for generating a first voltage that varies in response to the substrate temperature; a second voltage generator for generating second voltages Vf1 to Vfn?1 for specifying the first voltage at a point when a switching operation of the resistance value of the resistance corrector is performed; and a resistance switch unit for switching the resistance value of the resistance corrector by comparing the first voltage and the second voltages Vf1 to Vfn?1.

Abstract: Back-gate voltage control provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit. In the LSI, an FD-SOI structure having an embedded oxide film layer is used and a lower semiconductor region of the embedded oxide film layer is used as a back gate. A voltage for back gates in logic circuits having a small load in logic circuit block is controlled in response to activation of the block from outside of the block. Transistors, in which the gate and the back gate are connected to each other, are used for the circuit generating the back gate driving signal, and logic circuits having a heavy load such as circuit block output section, and the back gates are directly controlled according to a gate input signal.

Abstract: Method and system for developing low noise bandgap references. A stacked ?VBE generator is disclosed for generating ?VBE. The stacked ?VBE generator includes an error amplifier configured to generate an output based on an error signal provided by a first stack of the ?VBE generator. The first stack of the ?VBE is coupled to a first sub-circuit and the error amplifier to form a closed loop. The first sub-circuit is coupled to a power supply and ground and configured to provide a source current between the power supply and the ground. The stacked ?VBE generator also includes a second sub-circuit coupled to the output of the error amplifier, the first and second stacks, and the ground, as well as a second stack of the ?VBE generator, which is coupled to the first stack and the second sub-circuit. The ?VBE is measured at outputs of the first and second stacks and equals the sum of individual ?VBEs of the first and second stacks.

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract: A temperature compensation circuit includes: a sensing circuit arranged to sense a temperature to generate a sensing signal; an operational circuit arranged to sample the sensing signal to generate a sample signal during a first phase, and arranged to generate an output signal according to the sensing signal and the sample signal during a second phase; and a capacitive circuit arranged to provide a capacitance adjusted by the output signal.

Abstract: A reference voltage generating circuit that accurately corrects temperature characteristics of a BGR (bandgap reference) circuit and a regulator. A voltage dividing circuit outputs first and second voltages obtained by dividing a BGR voltage. The regulator includes a differential amplifier, first and second resisters coupled in series between the output terminal of the differential amplifier and the ground. The positive input terminal of the differential amplifier receives the BGR voltage, and the negative input terminal is coupled to a coupled node between third and fourth resistors. The BGR circuit outputs a third voltage varying with a temperature determined by a predetermined amount of current flowing in the BGR circuit and a predetermined resistor. A temperature-characteristics correcting circuit controls a correcting current flowing through the coupled node so that its magnitude varies with the difference between the first and third voltages, and the difference between the second and third voltages.

Abstract: The present invention discloses a battery charging circuit adjusting a charging voltage or a charging current according to a battery temperature, which includes: a power stage circuit including at least one power transistor switch and converting input power to charging power by operating the power transistor switch within a temperature range, wherein the charging power includes the charging voltage and the charging current; a reference signal generator obtaining signals representing the battery temperature and generating a reference signal accordingly; and a control circuit generating a switch signal according to the reference signal for operating the power transistor of the power stage circuit, wherein the charging voltage or the charging current is gradually increased as the battery temperature increases in a lower range within the temperature range or gradually decreased as the battery temperature increases in a higher range within the temperature range.

Abstract: A temperature stable comparator circuit, comprised of: a branch C having a first end, a second end, a first type-1 device and first type-2 device, wherein the first type-1 device and the first type-2 device are connected to a node O; a branch B having a first end, a second end, a second type-1 device, a second type-2 device, and a resistor; and a branch A having a first end, a second end, a third type-2 device and a current-control device; wherein the first ends of the branch A, branch B, and branch C are commonly connected, and the second ends of the branch B and branch C are commonly connected.

Abstract: A voltage integrator circuit and a filter circuit are configurable to adjust their outputs in order to compensate for various circuit elements' variations with temperature. The voltage integrator circuit performs temperature compensation through the adjustment in resistance value of a single resistive element in response to a received control signal. The control signal correlates with a detected temperature value and causes the resistive element to adjust its resistance value in a manner that maintains the transfer function of the voltage integrator circuit under varying temperatures. The filter circuit comprises one or more of the voltage integrator circuits and maintains its transfer function under varying temperatures.

Abstract: In managing temperature in a system on chip (SOC), a main temperature signal is generated using a main sensor, where the main temperature signal is a signal having a value corresponding to a main temperature of the SOC. Subsidiary temperature signals are generated using subsidiary sensors, where the subsidiary temperature signals are pulse signals having frequencies corresponding to subsidiary temperatures of subsidiary blocks in the SOC, respectively. An operation of the SOC is controlled based upon the main temperature signal and the subsidiary temperature signals.

Abstract: Described is a method and apparatus for compensating for a change in an output characteristic of a temperature sensor due to varying temperature. The temperature sensor includes a temperature sensing core, an analog-to-digital converter, a counter, and a temperature compensating circuit. The temperature sensing core generates a sense voltage corresponding to a sensed temperature. The analog-to-digital converter converts the sense voltage into a digital signal and generates a conversion signal. The temperature compensating circuit generates a counter clock signal that varies according to a temperature change. The counter counts the number of pulses of the counter clock signal according to the conversion signal.

Abstract: In a method for operating a plasma installation, an induction heating installation or a laser excitation installation in a pulsed power output operation, includes controlling at least one semiconductor switching element to produce a power loss in the at least one semiconductor switching element during a pulse pause time period in a pulse pause operation during which no power suitable for the ignition or the operation of the plasma process, the induction heating process, or the laser excitation process is produced at a power output of a power generator by the at least one semiconductor switching element of the power generator, and such that a reduction of a temperature of the at least one semiconductor switching element by more than a predetermined value is prevented.

Abstract: Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.

Abstract: Provided is a temperature detection system which is low in cost. The temperature detection system includes a plurality of temperature detection ICs (10) for detecting an abnormal temperature and a resistor (20). Each of the plurality of temperature detection ICs (10) includes a reference voltage terminal connected to an output terminal of one of the plurality of temperature detection ICs (10) located at a preceding stage. The resistor (20) is provided between an output terminal of one of the plurality of temperature detection ICs (10) located at the final stage and a ground terminal.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: In an embodiment a circuit provides an active resistance that is adjusted with temperature, the active resistance has a magnitude and temperature coefficient that is selected by the values of external resistors. The active resistance is controlled by an active resistance controller that uses a temperature dependent source and a temperature stable source to control adjustment of a first adjustable resistance to maintain correspondence between a temperature dependent parameter and a temperature stable parameter, and adjusts a second adjustable resistance that is part of the active resistance in correspondence with adjustment of the first adjustable resistance.

Abstract: A circuit includes a comparator, a first circuit, and a second circuit. The comparator includes a first input node, a second input node, and an output node. The first circuit is configured to generate a temperature-dependent reference current at the second input node of the comparator. The second circuit is coupled with the second input node of the comparator. The second circuit is configured to increase a voltage level at the second input node of the comparator in response to the temperature-dependent reference current when a signal at the output node of the comparator indicates a first comparison result, and decrease the voltage level at the second input node of the comparator when the signal at the output node of the comparator indicates a second comparison result.

Abstract: Methods and apparatus for a providing temperature-compensated reference voltage are provided. In an example, a temperature-compensated voltage reference circuit includes a current mirror portion and a temperature-compensated output portion coupled to the current mirror portion. The temperature-compensated output portion comprises a very low threshold voltage (Vt) transistor coupled in series with a negative temperature coefficient transistor. The output portion can further include a positive temperature coefficient element coupled in series with the very low Vt transistor. The positive temperature coefficient element can be an adjustable resistive element. The output portion can further include an output transistor having a gate coupled to the current mirror portion and coupled between a supply voltage and the positive temperature coefficient element. The very low Vt transistor can be a substantially zero Vt n-channel metal-oxide-semiconductor (NMOS) transistor, and can be coupled in a diode configuration.

Abstract: A temperature independent reference circuit includes first and second bipolar transistors with commonly coupled bases. First and second resistors are coupled in series between the emitter of the second bipolar transistor and ground. The first and second resistors have first and second resistance values, R1 and R2, and third and second temperature coefficients, TC3 and TC2, respectively. The resistance values being such that a temperature coefficient of a difference between the base-emitter voltages of the first and second bipolar transistors, TC1, is substantially equal to TC2×(R2/(R1+R2))+TC3×(R1/R1+R2)), resulting in a reference current flowing through each of the first and second bipolar transistors that is substantially constant over temperature. A third resistor coupled between a node and the collector of the second bipolar transistor has a value such that a reference voltage generated at the node is substantially constant over temperature.

Abstract: A system and method are provided for using a system-on-chip (SoC) memory speed control logic core to control memory maintenance and access parameters. A SoC is provided with an internal hardware-enabled memory speed control logic (MSCL) core. An array of SoC memory control parameter registers is accessed and a set of parameters is selected from one of the registers. The selected set of parameters is delivered to a SoC memory controller, to replace an initial set of parameters, and the memory controller manages an off-SoC memory using the delivered set of parameters.

Abstract: In one embodiment, a temperature compensation circuit includes a bias circuit configured to output a bias current having a current value increasing in proportion to an absolute temperature in a low-temperature region, and having a greater current value than the current value proportional to the absolute temperature in a high-temperature region, and a transistor which is supplied with the bias current. The bias circuit includes first to third transistors, a fourth transistor through which a first current flows, a fifth transistor, a sixth transistor through which a second current flows, and a control circuit having a connection terminal capable of being connected with an external resistor for adjusting a magnitude of the second current. The bias circuit generates a third current by adding the first current to the second current, and outputs the bias current that is the third current or a fourth current depending on the third current.

Abstract: A voltage scaling device of a semiconductor memory device, the voltage scaling device including: a delay tester for determining the number of delay cells of a delay locked loop (DLL) required to cumulatively delay a clock signal having a constant frequency, and which is input to the DLL, by one clock period; a temperature sensor for measuring the temperature of the semiconductor memory device; and a voltage regulator for regulating a supply voltage of a voltage source which provides a chip voltage to the semiconductor memory device in response to the temperature measured by the temperature sensor and a locking value corresponding to the number of delay cells calculated by the delay tester.

Abstract: A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

Abstract: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.

Abstract: A temperature compensation circuit, comprises a temperature sensor circuit. The circuit comprises two or more temperature sensitive devices. In use, the devices are operated at different current densities and sense virtually the same ambient temperature. The devices provide temperature dependent signals having linear components with slopes of identical signs. The circuit further comprises one of more differential signal providing device for generating a difference of the signals generated by the temperature sensitive devices. A method for generating a voltage reference with a well-defined temperature behavior, comprises applying different current densities to two or more temperature sensitive devices of a temperature sensor circuit; sensing virtually the same ambient temperature with the two or more temperature sensitive devices.

Abstract: A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive element for the purpose of cancelling temperature sensitivity out of the reference voltage the bandgap generator produces. Accordingly, this same temperature-sensitive element is used in accordance with the invention as the means for indicating the temperature of the integrated circuit, without the need to fabricate a temperature sensor separate and apart from the bandgap generator. Specifically, in one embodiment, a voltage across a temperature-sensitive junction from a bandgap generator is assessed in a temperature conversion stage portion of the combined bandgap generator and temperature sensor circuit. Assessment of this voltage can be used to produce a voltage- or current-based output indicative of the temperature of the integrated circuit, which output can be binary or analog in nature.

Abstract: Provided is a two-terminal semiconductor sensor device with which an external device having low circuit or element accuracy may be used. An output voltage (VOUT) of the two-terminal semiconductor sensor device based on temperature is not based on a constant current of a constant current source (70) of the external device and a current of an output transistor (60) of the two-terminal semiconductor sensor device, but on a resistance ratio of a voltage dividing circuit including a resistor (30) and a resistor (40), and a temperature voltage (Vbe) of the two-terminal semiconductor sensor device. Accordingly, accuracy of the constant current of the constant current source (70) of the external device that receives the output voltage (VOUT) does not need to be high. Therefore, the external device does not need to have a highly accurate circuit or element for receiving the output voltage (VOUT).

Abstract: Provided is a reference voltage circuit for generating a low constant voltage (1.25 V or lower) having less temperature dependence. The reference voltage circuit includes: a bandgap voltage generation circuit including two PN junctions, for outputting a voltage (Vk) which is based on any one of the two PN junctions and a current (Ik) which is based on a voltage difference between the two PN junctions; and a voltage divider circuit for dividing the voltage (Vk). The voltage divider circuit corrects a divided voltage based on the current (Ik) input thereto, and outputs the corrected divided voltage as a reference voltage.

Abstract: A temperature compensation circuit for generating a temperature compensating reference voltage (VREF) may include a Bandgap reference circuit configured to generate a Bandgap reference voltage (VBGR) that is substantially temperature independent and a proportional-to-absolute-temperature reference voltage (VPTAT) that varies substantially in proportion to absolute temperature. The circuit may also include an operational amplifier that is connected to the Bandgap reference circuit and that has an output on which VREF is based. The circuit may also include a feedback circuit that is connected to the operational amplifier and to the Bandgap reference circuit and that is configured so as to cause VREF to be substantially equal to VPTAT times a constant k1, minus VBGR times a constant k2.

Abstract: The present invention provides a method and system for open loop compensation of delay variations in a delay line. The method includes sensing the Process, Voltage, Temperature (PVT) variations in the delay line using a sensing circuit. A first and second sensitive current are generated based on the PVT variations. The first and second sensitive currents are mirrored currents from the sensing circuit. Then, a first compensation current is generated based on the first sensitive current and a first summing current. The first summing current is a reference current independent of the PVT variations. Further, the first compensation current is mirrored as a second summing current and a second compensation current is generated from the second sensitive current and the second summing current. The second compensation current compensates the delay variations and has a sensitivity based on the sensitivities of the first and second sensitive currents.

Abstract: A temperature detection circuit includes a sensor, an integrated circuit (IC) chip, and a resistor. The sensor is operable for sensing a temperature. The IC chip can compare a sense voltage indicative of the temperature with a threshold voltage indicative of a temperature threshold to determine a temperature condition. The IC chip has a substantially constant parameter. The resistor is externally coupled to the IC chip. The IC chip maintains a current ratio, including a ratio of a first current flowing through the sensor to a second current flowing through the resistor, equal to the substantially constant parameter.

Abstract: A temperature sensor includes a compare subject voltage output unit, a temperature range decision unit, and a temperature signal output unit. The compare subject voltage output unit is configured to output a reference voltage having a constant value irrespective of a change of an external temperature and a third temperature voltage that decreases in response to an increase of an external temperature. The temperature range decision unit is configured to compare the reference voltage and the third temperature voltage, and output an enable signal, to indicate whether the external temperature is different from a normal temperature. The temperature signal output unit is configured to output a specific one of a plurality of high temperature signals or a specific one of a plurality of low temperature signals, to indicate a range of the external temperature, in response to the enable signal.

Abstract: A temperature compensated current source forms an uncompensated source current that is proportional to a reference voltage applied to an impedance, wherein the impedance varies with temperature. A temperature compensation current is formed that is proportional to absolute temperature (IPTAT). The uncompensated source current and the temperature compensation current is combined to form a temperature compensated source current and provided as an output of the current source.

Abstract: A precision voltage clamp is provided that displays virtually no temperature dependence, and maintains a clamp voltage that varies by about 1 my for input voltages ranging from the onset of clamping to several volts above this input. In particular, a current mirror is used to ensure that the current densities in the clamping transistor, and the bias correcting transistor, are very close to equal once the clamping action begins. A small current may be injected into the programming side of the mirror which will turn on the mirror and the biasing transistor, making it much easier for the clamp to clamp and settle.

Abstract: A temperature compensation circuit, applied on a metal oxide semiconductor (MOS) transistor, with a threshold voltage varying with respect to a temperature value of the MOS transistor, for having the MOS transistor corresponding to an equivalent threshold voltage substantially with a constant value throughout a temperature range, comprises a voltage generator. The voltage generator provides a voltage proportional to absolute temperature (VPTAT) to drive the body of the MOS transistor in such way that a variation of the threshold voltage due to temperature variation of the MOS transistor is substantially compensated with a variation of the threshold voltage due to body-source voltage variation of the MOS transistor, so that the MOS transistor corresponds to the equivalent threshold voltage that is temperature invariant.

Abstract: A controlling method is provided for preventing a solid state drive from being operated at a high temperature. The solid state drive includes a controlling circuit, a temperature detecting circuit and a plurality of dies. The dies are divided into n groups and accessed by the controlling circuit through n IO buses. The controlling circuit is in communication with the temperature detecting circuit for detecting a temperature of the solid state drive. The controlling method includes the following steps. Firstly, a judging step is performed to judge whether the temperature of the solid state drive is higher than a predetermined temperature. If the temperature of the solid state drive is higher than the predetermined temperature, the frequencies of n clock signals in the n IO buses are decreased.

Abstract: A temperature compensation circuit is disclosed. A temperature compensation circuit may include a temperature coefficient generator configured to generate a first signal and a second signal, wherein the first signal is proportional-to-absolute-temperature (ptat) and the second signal is negatively-proportional-to-absolute-temperature (ntat), a first programmable element configured to multiply at a first programmable ratio an amplitude of a third signal having a negative temperature coefficient from a first temperature to a second temperature, and a second programmable element configured to multiply at a second programmable ratio an amplitude of a fourth signal having a positive temperature coefficient from the second temperature to a third temperature.

Abstract: A D/A converter having reference node for receiving a reference voltage and together network having a network reference bus connected to the reference node by way of a first electrical connection. The converter network produces a series of reference outputs derived from the reference voltage in response to a digital input applied to the converter, with the converter network sinking a network reference current at the network reference bus which varies with the converter digital input. A reference current compensator circuit is included which provides a compensation current at the network reference bus having a magnitude which varies in response to at least a portion of the digital input, with the compensation current operating to reduce variations in current through the first electrical connection caused by changes in the digital input.

Abstract: In an exemplary embodiment, an apparatus includes a first set of circuit elements and a second set of circuit elements. The first set of circuit elements is used in a first configuration of the apparatus, and the second set of circuit elements is used in a second configuration of the apparatus. The first configuration of the apparatus is switched to the second configuration of the apparatus in order to improve reliability of the apparatus.

Abstract: Provided herein are circuits and methods to generate a voltage proportional to absolute temperature (VPTAT) and/or a bandgap voltage output (VGO) with low 1/f noise. A first base-emitter voltage branch is used to produce a first base-emitter voltage (VBE1). A second base-emitter voltage branch is used to produce a second base-emitter voltage (VBE2). The circuit also includes a first current preconditioning branch and/or a second current preconditioning branch. The VPTAT is produced based on VBE1 and VBE2. A CTAT branch can be used to generate a voltage complimentary to absolute temperature (VCTAT), which can be added to VPTAT to produce VGO. Which transistors are in the first base-emitter voltage branch, the second base-emitter voltage branch, the first current preconditioning branch, the second current pre-conditioning branch, and the CTAT branch changes over time.