Abstract: A bandgap reference circuit includes a first current generator having first and second bipolar transistors for generating a first current that varies proportionally as a function of temperature. A second current generator includes a field effect transistor for generating a second current that varies inversely as a function of temperature. A trimming circuit includes a third bipolar transistor sized to match the first bipolar transistor, a third current generator having a second field effect transistor coupled to a collector and base of the third bipolar transistor to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current by adding the third current to or subtracting the third current from the second current based on a trim control signal. A bandgap reference current is generated by summing the first current and the modified second current.

Abstract: An apparatus and method for analog to digital conversion of analog input signals are disclosed herein. In some embodiments, an analog-to-digital (ADC) may comprise: a first successive approximation register (SAR) circuit comprising a fast SAR (FSAR) circuit and a residue digital-to-analog converter (RDAC) circuit and a residue amplifier circuit, coupled to the RDAC circuit, comprising an amplifier circuit that is configured to amplify a residual signal generated by the RDAC circuit, wherein the amplifier circuit comprises a deadzone control circuit and a first, second and third inverter stages, wherein the third stage is biased to operate in a sub-threshold region.

Abstract: A power on reset circuit includes a threshold detector circuit. The threshold detector circuit includes a power supply voltage, a voltage comparator, first circuitry, second circuitry, and third circuitry. The voltage comparator has first and second input terminals, and an output terminal to provide a reset signal. The first circuitry is operable to convert the power supply voltage to a sensed current, and provides a positive temperature coefficient to the sensed current. The second circuitry is operable to generate, based on the sensed current, a temperature-dependent voltage corresponding to the power supply voltage and to couple the temperature-dependent voltage to the first input of the voltage comparator. The third circuitry is operable to generate, based on the sensed current, a reference voltage and to couple the reference voltage to the second input of the voltage comparator.

Abstract: Provided are a reference source circuit, a chip, a power supply, and an electronic device. The circuit comprises: a first current generation unit used for generating first current; a reference voltage generation unit electrically connected to the first current generation unit and used for generating a band-gap reference voltage by using the first current; and a reference current generation unit electrically connected to the first current generation unit and the reference voltage generation unit and used for generating band-gap reference current by using the first current. By means of the circuit above, a band-gap reference voltage and band-gap reference current can be generated in a reference source circuit, and the first current generation unit may be reused, so that high-gain and simultaneous work of two loops can be achieved, the cost can be reduced, and the chip area can be saved as compared with the design of two separate reference sources.

Abstract: In described examples, a circuit includes a first current mirror circuit. The first current mirror circuit is coupled to a power input terminal. A first stage is coupled to the first current mirror circuit, and a second stage is coupled to the first stage and to the first current mirror circuit. An amplifier is coupled to the first and second stages. The amplifier has first and second input terminals. The first input terminal is coupled to the first stage, and the second input terminal is coupled to the second stage. A second current mirror circuit is coupled to the first stage, the second stage and the amplifier.

Abstract: In an example, a circuit includes an input stage having a control voltage input, a feedback input, a first control output and a second control output. The feedback input is coupled to a driver output. A first path stage has a first voltage input and a third output. The first voltage input is coupled to the first control output, and the third output is coupled to the driver output. A second path stage has a second voltage input and a fourth output. The second voltage input is coupled to the second control output, and the fourth output is coupled to the driver output. A load transistor has a control input coupled to the driver output. The input stage is configured to provide gm-boosting to the first path stage to turn on the load transistor responsive to an output voltage at a voltage output.

Abstract: In an embodiment, a method includes: providing a voltage setpoint to a voltage converter; generating an output voltage at a voltage rail with the voltage converter based on the voltage setpoint; when the voltage setpoint is transitioning from a first voltage setpoint to a second voltage setpoint that has a lower magnitude than the first voltage setpoint, providing a first constant current to a first node coupled to a control terminal of an output transistor to turn on the output transistor, where the output transistor includes a source terminal coupled to a first terminal of a first resistor, and where a current path of the output transistor is coupled to the voltage rail; and turning off the output transistor after the output voltage reaches the target output voltage corresponding to the second voltage setpoint.

Abstract: In an embodiment, a voltage reference circuit is disclosed that includes a first transistor circuit that is configured to receive an external supply voltage as an input and to output a first voltage and a chopper circuit that is configured to receive a second voltage as an input and to output a voltage reference. The chopper circuit has a breakage threshold. The voltage reference circuit further includes a second transistor circuit that is configured to receive the first voltage as an input and to output the second voltage at a value that is less than or equal to the breakage threshold of the chopper circuit.

Abstract: Memory devices may have internal circuitry that employs voltages higher and/or lower than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate the higher voltages internally. The number of available charge pumps in a memory device may be conservatively dimensioned to be high, in some systems to protect yields. Some of the available charge pumps may be disabled during manufacturing or testing to reduce the number of active charge pumps. The testing process may employ dedicated logic in the memory device and the disabling may employ fuse circuitry.

Abstract: An electronic circuit includes a first transistor coupled between a first node and a supply voltage and controlled by a first node, a second transistor coupled between a second node and the supply voltage and controlled by the first node, a third transistor coupled between a third node and the supply voltage and controlled by a fourth node, a fourth transistor coupled between the fourth node and the supply voltage and controlled by the fourth node, a fifth transistor coupled between the first node and the fifth node and controlled by a reference voltage, a sixth transistor coupled between the second node and a ground and controlled by the third node, a seventh transistor coupled between the fourth node and the ground and controlled by the second node, a first resistor coupled the fourth node to the ground, and a second resistor coupled to the fifth node.

Abstract: A charge pump circuit is provided, comprising: a first charge pump having an input terminal for receiving a supply voltage and configured to boost the received supply voltage to provide at an output terminal of the first charge pump a first charge pump voltage; a second charge pump having an input terminal coupled to the output terminal of the first charge pump for receiving the first charge pump voltage and configured to boost the received first charge pump voltage to provide at an output terminal of the second charge pump a second charge pump voltage, and a voltage drop sensing device configured to detect drops in the first charge pump voltage and to deactivate second transistors of bypass units associated to the disabled charge pump stages when a drop in the first charge pump voltage is detected.

Abstract: In described examples, a circuit includes a first current mirror circuit. The first current mirror circuit is coupled to a power input terminal. A first stage is coupled to the first current mirror circuit, and a second stage is coupled to the first stage and to the first current mirror circuit. An amplifier is coupled to the first and second stages. The amplifier has first and second input terminals. The first input terminal is coupled to the first stage, and the second input terminal is coupled to the second stage. A second current mirror circuit is coupled to the first stage, the second stage and the amplifier.

Abstract: The present disclosure relates to the field of analog integrated circuit technology. A digital and analog mixed signal control circuit for eliminating a degenerate metastable state of a self-biased bandgap reference circuit utilizes a digital-to-analog converter module with low-power consumption and flexibly customized accuracy as needed, a delay switch, and a non-volatile memory cell to directly control and clamp a circuit node at the degenerate metastable state in the bandgap reference circuit module, and to release the clamping after a certain delay. Such control mechanism effectively prevents the self-biased bandgap reference circuit with an operational amplifier from entering the degenerate metastable state, and enhance robustness of the circuit, such that the reference circuit is capable of starting normally under various conditions, which improves the performance and yield of the products.

Abstract: An adaptive voltage converter adapted to compensate for the exponential sensitivities of sub-threshold and near-threshold circuits. The converter can change its power/performance characteristics between different energy modes. The converter may comprise two or more voltage converters/regulators. A multiplexing circuit selects between the outputs of the several converters/regulators depending on the state of a control signal generated by a control facility. The converter is specially adapted to change the output of each converter/regulator based on a number of variables, including, for example, process corner, temperature and input voltage.

Abstract: A bandgap reference circuit generates a PTAT voltage and a CTAT voltage having a different temperature characteristic from the PTAT voltage and generates a reference voltage based on the PTAT voltage, the CTAT voltage, and a compensation voltage. The bandgap reference circuit generates a CTAT current having a different temperature characteristic from the PTAT voltage based on the CTAT voltage and determines the compensation voltage based on the CTAT current.

Abstract: A circuit to protect an overvoltage in a universal serial bus (USB) device include an overvoltage protection (OVP) switch connected to a pin of a USB receptacle and a switch controller to turn off the OVP switch when an overvoltage is detected such that power between the pin and the USB device is interrupted. The switch controller supplies a control signal to the OVP switch such that the OVP switch has a first on-resistance when the USB device is operating in a normal mode and no overvoltage is detected, and has a second on-resistance, higher than the first on-resistance, when the USB device is operating in a low-power mode and no overvoltage is detected.

Abstract: A power detect circuit is disclosed. A power detect circuit includes a voltage multiplier that receives an external supply voltage and generates a second supply voltage that is greater than the former. A voltage regulator is coupled to receive the second supply voltage and outputs a regulated supply voltage. A bandgap circuit is coupled to receive the second supply voltage when a first switch is closed, and the regulated supply voltage when a second switch is closed. The bandgap circuit generates a reference voltage for the voltage regulator, as well as one or more output voltages. A comparator circuit is coupled to receive the one or more output voltages from the bandgap circuit, and may compare these one or more output voltages to the regulated supply voltage.

Abstract: A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

Abstract: A bandgap reference circuit includes a feedback transistor, a reference setting circuit, an amplification circuit and an output transistor. A source of the feedback transistor is configured to connect to a first power supply, and a drain of the feedback transistor is configured to connect to a first node. The reference setting circuit includes a first bridge arm and a second bridge arm which are connected in parallel. An inverting input terminal of the amplification circuit is connected to the first bridge arm, and a non-inverting input terminal of the amplification circuit is connected to the second bridge arm. A gate of the output transistor is connected to an output terminal of the amplification circuit, and a source of the output transistor is connected to the first power supply.

Abstract: The present disclosure provides an abnormal voltage monitoring device, a storage device, and a vehicle. The abnormal voltage monitoring device comprises a voltage divider configure to receive an input voltage from a voltage generator and output a first distribution voltage based on the input voltage, a second bandgap reference generation circuit configured to output a reference voltage, and a monitoring circuit configured to receive the first distribution voltage from the voltage divider and the reference voltage from the second bandgap reference generation circuit, and output an alarm signal responsive to comparing a voltage level of the first distribution voltage with that of the reference voltage. The voltage generator comprises a first bandgap reference generation circuit, and the second bandgap reference generation circuit is configured to generate the reference voltage differently than the first bandgap reference generation circuit.

Abstract: A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer. The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.

Abstract: According to an embodiment, a bandgap type reference voltage generation circuit includes a first node that is connected to an output terminal, second and third nodes that are connected to current sources, a fourth node, first and second bipolar junction transistors with bases that are connected to the first node, a third bipolar junction transistor that is provided with an emitter-collector path that is connected between the second node and the fourth node and amplifies an output current of the first bipolar junction transistor, and a fourth bipolar junction transistor that is provided with an emitter-collector path that is connected between the third node and the fourth node and amplifies an output current of the second bipolar junction transistor.

Abstract: A switch control circuit includes a power switch, a first protection unit, and a second protection unit. The power switch has a first terminal coupled to a first voltage terminal for receiving a first voltage, a second terminal coupled to a second voltage terminal for receiving a second voltage, and a control terminal receives a control voltage. In a first mode, the control voltage is greater than the first voltage. In a second mode, when a voltage of the second voltage terminal is smaller than a first reference voltage, the first protection unit pulls down the control voltage to reduce a current flowing through the power switch. When the voltage of the second voltage terminal is smaller than the second reference voltage, the second protection unit pulls down the control voltage to a ground voltage.

Abstract: In circuitry for measuring a voltage at a node, a capacitive divider is coupled to the node, wherein the capacitive divider provides a first output. A resistive divider is coupled to the node, wherein the resistive divider provides a second output.

Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

Abstract: A reference voltage circuit includes a first circuit including a first PN junction device and a first resistor connected in series between a power supply node and a first node, and a second resistor connected between the first node and an intermediate node, and a third resistor connected between the intermediate node and a reference voltage output node, and a second circuit including a second PN junction device connected between the power supply node and a second node and a fourth resistor connected between the second node and the intermediate node. A feedback current causes voltage across the first resistor to offset changes in voltage across the first PN junction device. A correction current is applied to boost and or sink current in the voltage reference generator to extend the operating temperature range.

Abstract: A low dropout regulator includes a proportional-to-absolute-temperature (PTAT) circuit, an amplification circuit, and an output circuit. The PTAT circuit outputs one current, and the amplification circuit outputs one or more currents. The one or more currents are outputted by the amplification circuit based on collector-emitter voltages associated with transistors of the PTAT circuit. Alternatively, the one or more currents are outputted by the amplification circuit based on the current outputted by the PTAT circuit and the collector-emitter voltages associated with the transistors of the PTAT circuit. The output circuit generates one or more output voltages based on at least one of a base-emitter voltage associated with a transistor of the PTAT circuit and a current of the one or more currents outputted by the amplification circuit.

Abstract: Systems, methods, circuits, devices, and apparatus including computer-readable mediums for managing reference voltages, e.g., with current compensation, in memory systems, e.g., non-volatile memory systems. In one aspect, an integrated circuit includes: an operational amplifier configured to receive input voltages and a supply voltage and output a control voltage based on the input voltages and the supply voltage; an output circuitry configured to receive the control voltage from the operational amplifier and the supply voltage, provide the input voltages to the operational amplifier, and output a reference voltage; and a compensation circuitry coupled to the output circuitry and configured to output a compensation current to compensate the output circuitry such that the reference voltage is substantially constant. The output circuitry is configured to generate the reference voltage based on the control voltage and the compensation current.

Abstract: A thermal sensor for an integrated circuit including: a Proportional To Absolute Temperature (PTAT) circuit comprising n-type MOS transistors and providing a first voltage; and a voltage generator circuit comprising a p-type MOS transistor and providing a second voltage. A reference voltage is based on the first voltage and the second voltage. At least one thermal output signal is based on the reference voltage together with the first voltage and/or the second voltage. In another aspect, an integrated circuit has a power routing arrangement, providing a power supply core voltage (VDDcore) to operate functional circuitry on the integrated circuit. One or more local thermal sensors are located on the integrated circuit, each comprising a PTAT circuit having MOS transistors using the power supply core voltage to generate a temperature-dependent voltage that varies independently of power supply core voltage variation.

Abstract: An aspect of the disclosure relates to a reference voltage generator, including: a first field effect transistor (FET) including a first threshold voltage; a second FET including a second threshold voltage different than the first threshold voltage; a gate voltage generator coupled to gates of the first and second FETs; a first current source coupled in series with the first FET between first and second voltage rails; a second current source; and a first resistor coupled in series with the second current source and the second FET between the first and second voltage rails, wherein a reference voltage is generated across the first resistor.

Abstract: An apparatus comprises: a first circuitry to charge first and second capacitors to a predetermined voltage level; a second circuitry to discharge the first capacitor through a diode at a first time; a third circuitry to discharge the second capacitor through the diode at a second time, wherein the second time is greater than the first time; a comparator to compare a first voltage of the first capacitor with a second voltage of the second capacitor; and logic to adjust a scaling factor applied to the second voltage according to an output of the comparator.

Abstract: An on-chip resistor correction circuit includes a first MOS transistor connected between VDD and a reference resistor, the other end of the reference resistor being grounded; an operational amplifier for outputting a first control signal based on a reference voltage and a voltage of the reference resistor; a second MOS transistor connected between VDD and a reference node; a branch where each of the on-chip resistors is located is controllably connected between the reference node and ground; a comparator for generating a comparison signal based on the voltage of the reference node and the reference voltage; and a controller for generating a control signal under the action of the comparison signal to control the branch where each of the on-chip resistors is located to turn on or off.

Abstract: A reference voltage circuit is disclosed. In the reference voltage circuit, a comparator compares a reference voltage and a voltage of a capacitor, so as to output a comparison signal; a controller checks conditions of the reference voltage and the leakage current based on the comparison signal; when a voltage of the capacitor is reduced too quickly, the controller adjusts a switching frequency of a switch device to effectively maintain the voltage of the capacitor.

Abstract: A voltage monitoring circuit monitors a magnitude relationship between a monitoring target voltage and a determination voltage and is capable of suppressing the influence of an offset of a reference voltage upon the determination voltage and setting the determination voltage as desired. The voltage monitoring circuit includes: an input terminal, applied with a monitoring target voltage or a divided voltage of the monitoring target voltage; a reference voltage generating circuit, generating a first reference voltage; a linear power circuit, converting the first reference voltage to a second reference voltage; a feedback resistor, generating a divided voltage of the second reference voltage, and negatively feeding back the divided voltage of the second reference voltage to the linear power circuit; and a comparing portion, comparing the second reference voltage with the monitoring target voltage or the divided voltage of the monitoring target voltage applied to the input terminal.

Abstract: Provided is a reference voltage circuit including a first MOS transistor to a sixth MOS transistor, a first resistor and a second resistor, a current source circuit, and an output terminal. Five of the transistors form a differential transconductance amplifier, and an input transistor of the differential transconductance amplifier operates in the manner of weak inversion operation.

Abstract: A current reference which includes a tracking voltage generator including a flipped gate transistor, a first transistor connected with the flipped gate transistor in a Vgs subtractive arrangement, an output node providing a tracking voltage which has a positive or negative temperature dependency based on the flipped gate transistor and the first transistor, and a second transistor connected to the output node; an amplifier to receive the tracking voltage and output an amplified signal; a control transistor to receive the amplified signal; a control resistor connected in series with the control transistor; and a current mirror to receive and mirror a reference current to at least one external device, the current mirror including mirroring pairs having a corresponding mirroring resistor coupled in series with a corresponding mirroring transistor, the mirroring resistor of at least one of the mirroring pairs having a serpentine structure.

Abstract: Systems and methods for frequency reference generation are described. In an embodiment, a frequency reference circuit, includes: a bandgap proportional to temperature (PTAT) generator circuit that generates a bandgap PTAT current; a resistor complementary to temperature (CTAT) generator circuit that generates a resistor CTAT current; an adder that adds the PTAT current and the CTAT current to generate a constant current Icons; a switched-resistor (switched-R) circuit that receives the constant current Icons and a previously generated output clock and generates an output; a bandgap voltage reference generator circuit that generates a bandgap voltage VBG; an integrator circuit that receives the output of the switched-R circuit and the bandgap voltage VBG and generates an output; and a voltage-controlled oscillator (VCO) circuit that receives the output of the integrator circuit and generates a frequency reference.

Abstract: A voltage pre-regulator can receive a variable voltage in a middle voltage range (e.g., dozens of volts) and provide a regulated voltage in a safe operating region of a low voltage device. The use of the voltage pre-regulator can allow circuits to use low voltage devices to perform additional regulation/conversion without fear of damage. The voltage pre-regulator disclosed herein can perform the voltage reduction and regulation functions of pre-regulation with commonly used transistor types because the disclosed circuits and method use a bias circuit. The bias circuit uses positive feedback so that no additional start-up circuitry is required. The positive feedback is controlled by negative feedback so that the pre-regulator is able to provide a regulated voltage that is stable over a range of input voltages and temperatures.

Abstract: A bandgap voltage reference circuit includes first and second transistors (e.g., 3-terminal BJTs or diode-connected BJTs), and a PTAT element (e.g., resistance or capacitance). The first transistor is at a first die location, and operates with a first base-emitter voltage. The second transistor is at a second die location, and operates with a second base-emitter voltage. Each of the first and second transistors may include multiple individual parallel-connected transistors. The PTAT element is operatively coupled to the first and second transistors such that a voltage difference between the first and second base-emitter voltages drops across the PTAT element. The first and second locations are separated by a distance (e.g., 1.5% or more of die length, or such that the respective centroids of the first and second transistor are spaced from one another). Such spatial distribution helps mitigate voltage shift induced by mechanical stress, and is insensitive to process variation.

Abstract: Examples of the disclosure include a controller having a mode of operation including one of an on mode and an off mode, the controller including a voltage rail node, a reference node, at least one powered component configured to generate a bandgap voltage signal based on a rail voltage at the voltage rail node, a switching device coupled in series between the reference node and the at least one powered component and configured to provide a conductive path through the at least one powered component from the voltage rail node to the reference node in response to the controller being in the on mode, and to interrupt the conductive path through the at least one powered component in response to the controller being in the off mode.

Abstract: A bandgap voltage regulator includes a proportional-to-absolute-temperature (PTAT) circuit, an amplifier, and a driver circuit. The PTAT circuit can include various transistors that output a corresponding control voltage. The amplifier generates another control voltage to compensate base-current variations associated with the transistors of the PTAT circuit. The control voltage is generated by the amplifier based on the control voltage outputted by the PTAT circuit, and one of a base-emitter voltage associated with a transistor of the PTAT circuit, a scaled down version of the control voltage outputted by the amplifier, and a scaled down version of the base-emitter voltage. The driver circuit outputs, based on a supply voltage and the control voltages outputted by the PTAT circuit, a reference voltage for driving a functional circuit.

Abstract: One device disclosed herein includes, among other things, a substrate, a first resistor comprising a first phase transition material formed above the substrate, the first phase transition material exhibiting a first dielectric phase for temperatures less than a first phase transition temperature and a first semiconductor phase for temperatures greater than the first phase transition temperature, and logic to detect a transition of the first resistor to the first semiconductor phase.

Abstract: Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.

Abstract: A bandgap reference voltage generating circuit includes a first current generator generating a first complementary-to-absolute temperature (CTAT) current and a first proportional-to-absolute temperature (PTAT) current, a second current generator generating a second CTAT current and a second PTAT current, and an output circuit outputting a reference voltage based on a difference between a first voltage based on the first CTAT current and the first PTAT current and a second voltage based on the second CTAT current and the second PTAT current, wherein the first CTAT current is cancelled by the second CTAT current.

Abstract: A user provides retailer-specific consents for access and use to private/sensitive information of the user. The private/sensitive information is centrally stored in a privacy vault. Retail services (retailer) that the user subscribes to are provided a user-specific and consent-specific token representing the user and consents to usage of specific private/sensitive information of the user. When the retailer has a need for user-specific private/sensitive information, the retailer presents the user-specific and consent-specific token to the privacy vault. Assuming, the retailer was given access to the requested private/sensitive information defined in the token, the privacy results returns the requested information to the retailer; otherwise, an unauthorized message is returned from the privacy vault to the retailer. The user defines the consents to each retailer and a record of the consents is maintained in the privacy vault.

Abstract: A sub-bandgap reference voltage generator includes a reference current generator generating a reference current (proportional to absolute temperature), a voltage generator generating an input voltage (proportional to absolute temperature) from the reference current, and a differential amplifier. The differential amplifier is biased by the reference current and has an input receiving the input voltage and a resistor generating a voltage proportional to absolute temperature summed with the input voltage to produce a temperature insensitive output reference voltage. The reference current generator may generate the reference current as a function of a difference between bias voltages of first and second transistors.

Abstract: An amplification apparatus includes a bias circuit for supplying a bias voltage, and an amplification circuit to which the bias voltage is supplied from the bias circuit. The bias circuit includes a first current source for increasing/decreasing a first current depending on the bias voltage, and a first MOSFET with first polarity through which the first current flows, to output a first voltage from a connection between the first current source and the first MOSFET; a second current source for outputting a constant current as a second current, and a second MOSFET with second polarity through which the second current flows, to output a second voltage from a connection between the second current source and the second MOSFET; and a voltage comparator for increasing/decreasing the bias voltage such that the first and second voltages become equal, based on a difference between the first and second voltages.

Abstract: A bandgap reference circuit includes a current generating circuit, a switch circuit and a control circuit. The current generating circuit is triggered by a trigger signal, generated when the bandgap reference circuit starts up, to mirror a base current to generate a first current and a second current. The current generating circuit is arranged to output the first current when triggered by the triggered signal. The switch circuit is controlled by a switch control signal to be selectively coupled between the current generating circuit and a terminal coupled to a regulator. The switch circuit is arranged to, when coupled between the current generating circuit and the terminal, allow the current generating circuit to output the second current to the terminal and accordingly provide a bandgap voltage. When the first current reduces to a predetermined level, the control circuit activates generation of the switch control signal to control the switch circuit.

Abstract: Embodiments relate to a circuit including a first circuit branch, a second circuit branch, and an integrator circuit. The first branch includes a first transistor and a first current source to generate a first CTAT voltage signal that includes components corresponding to parasitic base and emitter resistances of the first transistor. The second branch includes a second transistor and a second current source to generate a second CTAT voltage signal that includes components corresponding to parasitic base and emitter resistances of the second transistor. The first and second circuit branches are coupled to the integrator circuit such that the integrator circuit integrates a difference between the first and second CTAT voltage signals such that the integrated signal does not include any components corresponding to parasitic base and emitter resistances.

Abstract: A power supply voltage is monitored by a monitoring circuit including a variable current generator and a band gap voltage generator core receiving the variable current and including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the variable current generator generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.