Abstract: An integrated circuit is built with enhancement mode Gallium Nitride (GaN) components. The integrated circuit comprises a comparator circuit which compares an input voltage with a reference voltage to provide a controllable constant current source, the comparator having a drive transistor having a positive threshold voltage, the drive transistor being switched on and off based on a comparison result of the comparator. The circuit may drive ring oscillators and may provide pulse width modulation with variable duty cycle at constant frequency.

Abstract: A method and apparatuses for power regulation using an extended current limit are disclosed. The power regulator detects an occurrence of an output current of the regulator exceeding a first current limit, triggers an extended current limit timer based on the detected occurrence, regulates the output current according to a second current limit higher than the first current limit based on a duration of the extended current limit timer, and regulates the output current according to the first current limit based on an expiration of the duration of the extended current limit timer.

Abstract: A system including a source follower circuit is disclosed. The source follower circuit configured as a voltage buffer that includes a first common-drain transistor that passes an input signal at the gate to an output loading capacitor at the source, and a second common-drain transistor that is used as a bias current source. The source follower circuit includes a first resistor at the drain of the first transistor generating a first voltage that is fed back through a first path through the gate of the second transistor so as to produce additional current to help the output signal catch up with the input voltage. The source follower circuit further includes an inductive element and bias circuit, which along with the first resistor, increases bandwidth and reduced settling time.

Abstract: An integrated circuit (IC), including: a current mirror, including: a first field effect transistor (FET) including a first drain, a first gate, and a first source, wherein the first source is coupled to a first voltage rail; and a second FET including a second drain, a second gate, and a second source, wherein the second gate is coupled to the first gate of the first FET, and the second source is coupled to the first voltage rail; and a selective coupling circuit configured to selectively couple the first drain of the first FET to the first and second gates of the first and second FETs based on a voltage at the first drain of the first FET.

Abstract: A pulse generator circuit includes a charge pump having a charge pump output. A voltage divider is coupled to the charge pump output. The voltage divider has a voltage divider output. An error amplifier has a first error amplifier input and a second error amplifier input. The first error amplifier input is coupled to the voltage divider output. A dependent current source circuit has a first input coupled to the charge pump output, a second input coupled to the voltage divider output, and a third input coupled to the second error amplifier input. The dependent current source is configured to cause a current to flow from the charge pump output that is proportional to a difference between a first voltage at the voltage divider output and a second voltage at the second error amplifier input.

Abstract: A memory sub-system comprises a power management component comprising a plurality of regulators configured to supply respective operating voltages for components of the memory sub-system. The power management component is configured to adjust a regulator voltage level provided to a particular component until an operation state change of the particular component is detected. The power management voltage level is further configured to determine a value of the regulator voltage level at which the operation state change of the particular component is detected.

Abstract: A power management circuit in a low-power double data rate memory is configured to manage a plurality of power supplies memory according to a reference voltage. A low dropout regulator has a first transmitting terminal and a second transmitting terminal. The low dropout regulator adjusts a voltage difference between a first voltage and a second voltage according to the reference voltage. A power network structure is electrically connected to the low dropout regulator. A first power network circuit has a first connecting point, a grid shape and a first unit network space. A second power network circuit has a second connecting point, another grid shape and a second unit network space. The second connecting point is separated from the first connecting point by a distance. The distance is smaller than or equal to one of the first unit network space and the second unit network space.

Abstract: A system can include a voltage generator configured to generate a reference voltage, a power-up voltage, and a replicated voltage based on a power supply voltage. The system can further include a logic sub-component coupled to the voltage generator and configured to output a reset signal based on a comparison of the reference voltage to the power-up voltage and an indication that the reference voltage that has entered a steady state and is reliable as a measurement with respect to a voltage level of the power supply voltage. The indication can be determined based on a comparison of the replicated voltage to a particular threshold voltage level.

Abstract: An analog circuit has a first plurality of transistors that are connected as a first selectable resistance in the analog circuit, and a second plurality of transistors that are connected as a second selectable resistance in the analog circuit. In an unlocked state of the analog circuit, the first selectable resistance matches the second selectable resistance within a designed ratio and tolerance. In a locked state of the analog circuit, the first selectable resistance and the second selectable resistance do not match within the designed ratio and tolerance. A controller retrieves a logic lock key from an off-chip memory and selects the first and second selectable resistances, thereby setting the analog circuit to its unlocked state, by sending respective first and second portions of the logic lock key to operate the first and second pluralities of transistors.

Abstract: Provided are an LDO, an MCU, a fingerprint module and a terminal device. The LDO includes: a reference voltage generating circuit and a source follower connected to the reference voltage generating circuit. The reference voltage generating circuit is used to generate a reference voltage that changes with temperature to offset a voltage change caused by a voltage between a first terminal and a second terminal of the source follower changing with time, so that an output voltage of the second terminal of the source follower does not change with temperature. The LDO omits an operational amplifier EA and a resistor divider feedback network in the prior art, which not only has a simple circuit structure, but also can achieve ultra-low power consumption.

Abstract: A measurement apparatus includes external terminals configured for connection to a device-under-test (DUT), the external terminals including first and second force terminals and first and second sense terminals. The measurement apparatus further includes a controller and a feedback loop configured in a current feedback mode to sense a current flowing from the first force terminal to the second force terminal, and in a voltage feedback mode to sense a voltage across the first and second sense terminals. The measurement apparatus further includes a measurement path configured to measure a least one of a voltage and current across a pair of the external terminals and to supply the measured at least one of the voltage and current to the controller.

Abstract: A voltage converter comprises a current mirror circuit, a switch circuit, and a bias circuit electrically connected to a substrate of the switch circuit. When an electrical signal provided by the first electrical signal end is greater than an electrical signal provided by the second electrical signal end, the bias circuit is turned on to turn on the switch circuit, thereby an output end of the mirror current circuit outputs the electrical signal provided by the second electrical signal end. Otherwise, the output end of the current mirror circuit outputs the second voltage signal.

Abstract: The present disclosure concerns a device for supplying an adjustable current configured to supply discrete values of the current belonging to different current ranges, with a pitch between two successive discrete values determined by that of said ranges to which each of the two successive discrete values belongs.

Abstract: An internal voltage generation device includes: a voltage detection circuit generating a first detection signal by comparing a first voltage with a target voltage; a voltage difference detection circuit enabled in response to an operation enable signal, generating a second detection signal by comparing a voltage difference between the first voltage and a second voltage with a target gap voltage; a control circuit generating a first up/down code and the operation enable signal according to the first detection signal, and generating a second up/down code according to the second detection signal; a first voltage generation circuit generating the first voltage by down-converting a supply voltage, and adjusting a level of the first voltage according to the first up/down code; and a second voltage generation circuit generating the second voltage by boosting up the supply voltage, and adjusting a level of the second voltage according to the second up/down code.

Abstract: The switching circuit includes a first capacitor to which a pulse signal output from a control unit is input, a rectification circuit including at least a first diode and a second diode, the rectification circuit rectifying a voltage input from the first capacitor, and generating a first voltage, and a first switching element including a first terminal, a second terminal and a third terminal, the first voltage generated by the rectification circuit being applied between the first terminal and the second terminal.

Abstract: A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.

Abstract: A regulator circuit according to one embodiment includes a first transistor, a filter, and a differential amplifier. The first transistor is provided between an input terminal on a power supply side and an output terminal on an output side. The differential amplifier includes an output node connected to the first transistor, and controls the first transistor on the basis of a result of comparison between a reference voltage and a feedback voltage according to an output voltage applied to the output terminal. The filter is connected to a control node that makes a differential pair with the output node, in the differential amplifier.

Abstract: The present invention relates to an apparatus for calibrating a battery simulator having an input and an output, wherein a current path with an apparatus for measuring the current strength and with at least one capacitor is provided between the input and output. Furthermore, a voltage path can be provided between the input and output, with an apparatus for measuring the voltage and/or a current transformer, in the secondary current of which the apparatus for measuring the current strength is connected. If a battery simulator is connected to the apparatus it can charge the capacitor and then the capacitor can charge the battery simulator, whilst the current strength and voltage are measured, and on that basis the internal measurement devices of the battery simulator are calibrated.

Abstract: A soft-start circuit for a voltage regulator includes a comparator and a delay circuit. The comparator compares an output voltage, that is generated by the voltage regulator, and a reference voltage to generate a comparison signal. Further, the delay circuit receives the reference voltage and a control signal that is outputted based on the comparison signal, and outputs and provides another reference voltage to the voltage regulator. During a start-up of the voltage regulator, the reference voltage outputted by the delay circuit is a delayed version of the reference voltage received by the delay circuit. Thus, the soft-start circuit mitigates an overshoot of the output voltage during the start-up. Further, on completion of the start-up, the reference voltage outputted by the delay circuit is equal to the reference voltage received by the delay circuit.

Abstract: A reference voltage generation circuit may include: a first reference current path formed through a first node and a first transistor; a second reference current path formed through a second node and a second transistor; a first feedback loop configured to feed a first current back to the first and second reference current paths such that voltage levels of the first and second nodes are kept the same; and a second feedback loop configured to control the currents flowing through the first and second transistors according to a second current.

Abstract: A processor adjusts the voltage margin of a supply voltage based on a sampled clock frequency. The processor generates the supply voltage by combining the voltage margin with a specified nominal voltage, and provides the supply voltage to a processor module, such as graphics processing unit (GPU). In addition, an adaptive clock module (e.g., a digital frequency-locked loop) generates a clock signal for the processor module, wherein the frequency of the clock signal varies at least in part based on the supply voltage. The processor samples the frequency of the clock signal and adjusts the voltage margin based on the sampled frequency. The processor thereby keeps excursions in the clock frequency within a specified limit, thus supporting a relatively stable clock frequency.

Abstract: A switched mode power converter has an energy transfer element that delivers an output signal to a load. A power switching device coupled to the primary side of the energy transfer element regulates a transfer of energy to the load. A secondary controller is coupled to receive a feedback signal and output a pulsed signal in response thereto. A primary controller is coupled to receive the pulsed signal and output a drive signal in response thereto, the drive signal being coupled to control switching of the power switching device. A compensation circuit generates an adaptively compensated signal synchronous with the pulsed signal. The adaptively compensated signal has a parameter that is adaptively adjusted in response to a comparison of the feedback signal with a threshold reference signal. The parameter converges towards a final value that produces a desired level of the output signal.

Abstract: A system and method for monitoring energy use in an electronic device. In one embodiment, an energy monitoring system includes a processor and an energy monitor module. The energy monitor module includes instructions that when executed cause the processor to receive values of measured parameters of a pulse signal that controls the switching of energy to an energy storage device in a switch mode power supply that provides power to an electronic device. The instructions also cause the processor to determine, based on the values of measured parameters, attributes of operation of the electronic device powered by the energy source during an interval corresponding to the measured parameters. The instructions further cause the processor to generate, based on the attributes of operation, a control signal that causes the electronic device to change the loading of the power supply by the electronic device.

Abstract: A cross-domain power control circuit is disclosed. The circuit includes a first circuit branch having a first transistor coupled to a first supply voltage node and a second circuit branch having a second transistor coupled to the first supply voltage node. A third circuit branch is coupled between a second supply voltage node and a third supply voltage node. A second supply voltage conveyed on the second supply voltage node is less than a first supply voltage conveyed on the first supply voltage node. A fourth circuit branch is coupled between the first and third supply voltage nodes. In a first mode of operation, control circuitry causes the second supply voltage to be conveyed to the third supply voltage node. In a second mode of operation, the control circuitry causes the first supply voltage to be conveyed to the third supply voltage node.

Abstract: Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.

Abstract: A voltage regulator circuit comprises a regulator output; an amplifier that is activated in response to a first signal and inactivated in response to a second signal, the error amplifier having a first input for receiving a reference voltage, a second input for receiving a feedback voltage, and an output that generates a differential with respect to the reference voltage and the feedback voltage; an active discharging transistor that, in response to a falling slope of the electronic signal, discharges a present electronic signal at the regulator output; and a first switch at the output of the amplifier that is in open state in response to a receipt of the second signal to disconnect a coupling capacitor path between the regulator output and the reference voltage to negate an effect of noise on the reference voltage in response to the falling slope of the electronic signal.

Abstract: A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.

Abstract: A display driver comprises: a first grayscale line; output circuitry configured to receive a first grayscale voltage from the first grayscale line and perform digital-analog conversion on a pixel data to output a source output voltage corresponding to the pixel data, the digital-analog conversion being based on the first grayscale voltage; and first gamma assist circuitry comprising a first holding node to hold the first grayscale voltage received from the first grayscale line and configured to drive the first grayscale line based on a first voltage between the first holding node and the first grayscale line.

Abstract: A power supply circuit and an apparatus includes: a first switching transistor, a second switching transistor, a third switching transistor, a fourth switching transistor, a first capacitor, and a second capacitor. In this power supply circuit, one terminal of the first capacitor is connected to one terminal of the second capacitor, the other terminal of the first capacitor is separately connected to a first electrode of the first switching transistor and a first electrode of the second switching transistor, a second electrode of the first switching transistor is connected to a second electrode of the third switching transistor, a second electrode of the second switching transistor is connected to a second electrode of the fourth switching transistor, a third electrode of the first switching transistor is connected to an output node, and a third electrode of the second switching transistor is grounded.

Abstract: A comparing circuit may include a first amplifier and a second amplifier. The first amplifier performs a correlated double sampling operation in response to a pixel signal and a ramp signal, and the second amplifier amplifies an output signal of the first amplifier. The second amplifier includes a current stabilization circuit that supplies current to the second amplifier during the correlated double sampling operation irrespective of the output signal of the first amplifier.

Abstract: An internal voltage generation device includes: a voltage detection circuit generating a first detection signal by comparing a first voltage with a target voltage; a voltage difference detection circuit enabled in response to an operation enable signal, generating a second detection signal by comparing a voltage difference between the first voltage and a second voltage with a target gap voltage; a control circuit generating a first up/down code and the operation enable signal according to the first detection signal, and generating a second up/down code according to the second detection signal; a first voltage generation circuit generating the first voltage by down-converting a supply voltage, and adjusting a level of the first voltage according to the first up/down code; and a second voltage generation circuit generating the second voltage by boosting up the supply voltage, and adjusting a level of the second voltage according to the second up/down code.

Abstract: A circuit device includes a transfer gate, a charge compensation circuit, and a control circuit. The control circuit controls the charge compensation circuit. The charge compensation circuit discharges charge from an output node of the transfer gate when a voltage of an input signal to the transfer gate is in a first voltage range at a timing at which the transfer gate is turned off. The charge compensation circuit injects charge into the output node of the transfer gate when a voltage of the input signal to the transfer gate is in a second voltage range lower than that in the first voltage range at a timing at which the transfer gate is turned off.

Abstract: Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.

Abstract: A memory circuit may include a memory array, and the memory array may include a plurality of data columns. The plurality of data columns may be configured to store data bits and provide data signals when selected by a read operation. The memory array may also include one or more reference columns distributed in the memory array and configured to provide a reference signal. The reference signal may track with process, voltage, and temperature variations that are specific to the memory array, and may be used to remove a common signal component and adjust the signal level to distinguish between logic 0 and logic 1 data signals.

Abstract: A semiconductor device obtains high current ratio accuracy by eliminating an influence of plasma charging using a MOS-type transistor in which a channel region is isolated and separated from a semiconductor substrate. In a current mirror circuit in which both of a well of a NMOS-type transistor that generates a bias and a well of a NMOS-type transistor that receives the bias are formed insulated and separated from a semiconductor substrate, a connection circuit is connected between gate electrodes and wells of NMOS-type transistors without through the semiconductor substrate, and the connection circuit makes the gate electrodes and the wells in an electrically short-circuited state during manufacturing of the current mirror circuit, and makes the gate electrodes and the wells in a disconnected state in at least one direction during a mounting operation.

Abstract: In one aspect, the invention concerns a memory system that compensates for power level variations in sense amplifiers for multilevel memory. For example, a compensation circuit can be employed to compensate for current or voltage variations in the power supplied to multilevel memory sense amplifiers. As another example, compensation can be accomplished by application of a bias voltage to the power supply. Another example is a sense amplifier configured with improved input common mode voltage range. Such sense amplifiers can be two-pair and three-pair sense amplifiers. Further examples of the invention include more simplified sense amplifier configurations, and sense amplifiers having reduced leakage current.

Abstract: A circuit that produces an output signal having a frequency that is proportional to absolute temperature (PTAT) is disclosed. In one embodiment, the circuit includes a ring oscillator and a bias current circuit coupled thereto. The ring oscillator and the bias current circuit are implemented in close proximity to one another. During operation, the bias current circuit generates a bias current that is provided to the ring oscillator. The amount of bias current generated is dependent upon the temperature of the circuit. In turn, the frequency of an output signal provided by the ring oscillator is dependent on the amount of bias current received from the bias current circuit. Accordingly, the frequency of the ring oscillator output signal is dependent on the temperature of the circuit.

Abstract: Disclosed is a duty cycle corrector including a buffer circuit, an upper circuit, and a lower circuit. The buffer circuit includes: a first buffer circuit receiving a first input signal and thereby outputting a second output signal to a second output terminal; a second buffer circuit receiving a second input signal and thereby outputting a first output signal to a first output terminal; and a latch circuit coupled between the first and second output terminals. The upper circuit is coupled between a high voltage terminal and the buffer circuit and transmits current to the first and second output terminals according to each of the first and second input signals. The lower circuit is coupled between the buffer circuit and a low voltage terminal and withdraws current flowing through the first and second output terminals according to each of the first and second input signals.

Abstract: An apparatus includes a power switch configured to conduct a dc or ac current, a sense switch having a first drain/source terminal and a gate connected to a first drain/source terminal and a gate of the power switch respectively, an amplifier having a first input coupled to a second drain/source terminal of the power switch and a second input coupled to a second drain/source terminal of the sense switch and a first current sense processing switch having a gate connected to an output of the amplifier.

Abstract: A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output including a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

Abstract: A voltage detector includes a voltage division circuit which outputs a divided voltage based on an input voltage, a comparison circuit which compares the divided voltage and a reference voltage to output a detection signal and a release signal, and a voltage limiting circuit which limits the divided voltage to a preset voltage.

Abstract: A display product and a drive chip for driving a display panel are provided. The drive chip includes a gamma voltage divider circuit, which includes a voltage-dividing resistor string, consisting of resistors connected in series, configured to generate binding-point grayscale voltages; OPs, each of which is disposed at an output channel of the binding-point grayscale voltage, each OP having a positive power end receiving a first voltage and a negative power end receiving a second voltage, the first voltage greater than the second voltage; a low-voltage stabilized supply, providing the fixed second voltage to the negative power end; and a DAC, providing the first voltage to the positive power end. The first voltage provided by the DAC is dynamically adjusted based on grayscale or data voltages that are to be inputted to the display panel. By this way, the power loss of the drive chip is reduced.

Abstract: A data processing system is disclosed, which relates to a technology for implementing a convergence memory system provided with a plurality of memories. The data processing system includes a compute blade configured to generate a write command to store data and a read command to read the data, and a memory blade configured to selectively performed read and write operations in response to the read and write commands in a plurality of memories. The compute blade has a memory that stores information about performance characteristics of each of the plurality of memories, and is configured to determine priority information through which eviction of a cache line is carried out based on the stored information.

Abstract: A bias circuit includes a buffer, a temperature compensation circuit, and a feedback circuit. The buffer includes a first transistor. A first terminal of the first transistor and a second terminal of the first transistor are electrically connected with a first voltage source. A third terminal of the first transistor is electrically connected with an external amplifier. The temperature compensation circuit includes a second transistor and a temperature compensation component. A first terminal of the second transistor is electrically connected with the third terminal of the first transistor. Two terminals of the temperature compensation component are electrically connected with a second terminal of the second transistor and the first voltage source respectively. A third terminal of the second transistor is grounded. The feedback circuit is electrically connected with the first terminal of the first transistor and the second terminal of the second transistor.

Abstract: A reference signal generator circuit can be configured to provide a temperature-compensated voltage reference signal at an output node. The reference signal generator can include a diode-connected first FET device coupled between a supply node and the output node, and a flipped-gate transistor coupled between the output node and a reference node. The reference signal generator can include a bias current source configured to provide a bias current to the output node to adjust a current density in the flipped-gate transistor relative to a current density in the first transistor.

Abstract: A circuit includes a sensor configured to receive an input signal and to provide a sensor output signal in response to the received input signal. A plurality of mirror circuits are configured to receive the sensor output signal from the sensor and to generate mirror circuit output signals. The plurality of mirror circuits includes a first mirror circuit and at least a second mirror circuit. The first mirror circuit increases its respective mirror circuit output signal until its saturation value is reached. The second mirror circuit increases its respective mirror output signal if the sensor output signal is above a threshold value and until its saturation value is reached.

Abstract: A surge protection circuit includes a DC trigger circuit that generates a trigger signal when a surge pulse occurs, and a surge protection device, coupled to the DC trigger circuit, that generates a clamp voltage as an output voltage of the surge protection circuit and conducts surge currents to ground in response to the trigger signal. A feedback circuit is provided between the surge protection device and the DC trigger circuit. The feedback circuit lowers the clamp voltage so that it does not exceed a failure voltage of the surge protection device.

Abstract: A low dropout voltage (LDO) regulator including: a coarse loop circuit configured to receive an input voltage, generate a coarse code and adjust a coarse current according to the coarse code; a digital controller configured to receive the coarse code and generate a fine loop control signal according to the coarse code; and a fine loop circuit configured to receive the input voltage and the fine loop control signal and adjust a fine current according to the input voltage and the fine loop control signal, wherein the coarse current and the fine current adjust a level of an output voltage.

Abstract: A sense structure includes: a sense amplifier core configured to compare a measurement current with a reference current; a cascode transistor coupled to the sense amplifier core and configured to be coupled to a load; a switch coupled between a bias voltage node and a control terminal of the cascode transistor; a local capacitor having a first terminal coupled to the control terminal of the cascode transistor; a first transistor coupled between a second terminal of the local capacitor and a reference terminal; and a control circuit coupled to a control terminal of the first transistor, the control circuit configured to disconnect the local capacitor from the reference terminal to produce a voltage overshoot in the control terminal of the cascode transistor, and after disconnecting the local capacitor from the reference terminal, limit or reduce the voltage overshoot by adjusting a voltage of the control terminal of the first transistor.

Abstract: A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage.