Abstract: A gate driver, which drives an N-channel type transistor connected between an application terminal of an input voltage and an application terminal of a switch voltage, includes a capacitor circuit connected between an application terminal of a boot voltage higher than the switch voltage by a voltage between both ends of the boot capacitor and the application terminal of the switch voltage, and a timing control circuit that charges an input gate capacitance of the transistor with the boot voltage after precharging the same with the input voltage during turn-on transition of the transistor, and decreases capacitance value of the capacitor circuit after the turn-on transition of the transistor.

Abstract: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

Abstract: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

Abstract: First and second FETs of a half-bridge are series connected between first and second terminals and are gate driven, respectively, by first and second drivers. An inductance is connected to the intermediate node of the half-bridge. Power supply for the second driver circuit is a supply voltage generated by a voltage regulator as a function of the voltage between the first and the second terminal. Power supply for the first driver circuit is a supply voltage generated by a bootstrap capacitor having a first terminal connected via a first switch to receive the supply voltage output from the voltage regulator and a second terminal connected to the intermediate node. The first terminal of the bootstrap capacitor is further connected by a second switch to receive a second supply voltage. A control circuit generates control signals for the first and second driver circuits and the first and second switches.

Abstract: The invention concerns a device including: first and second detectors of the phase and/or of the frequency of an input signal with respect to first and second reference signals; and a Sigma/Delta converter interpreting outputs of the first or of the second phase and/or frequency detector to determine a propagation time of the input signal.

Abstract: A power source device, capable of charging a power storage device using power from a power source, is realized with a configuration capable of suppressing the generation of heat and noise. The power source includes a controller that determines an output state of a power storage device on the basis of a detection value detected by a voltage detection circuit. When the output state of the power storage device corresponds to a prescribed high-voltage state when prescribed charging conditions are satisfied, the controller causes only a first charging circuit, among the first charging circuit and a second charging circuit, to operate. When the output state corresponds to a prescribed low-voltage state, the controller causes only the second charging circuit to operate.

Abstract: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

Abstract: In some examples, a system includes a first transistor comprising a first source terminal coupled to a first input terminal, a first drain terminal coupled to a first top plate sampling capacitor, and a first gate terminal. The system also includes a first input-dependent dual clock boost circuit coupled to the first input terminal via a first boost circuit input and to the first gate terminal via a first boost circuit output. The system further includes a second transistor comprising a second source terminal coupled to a second input terminal, a second drain terminal coupled to a second top plate sampling capacitor, and a second gate terminal. The system also includes a second input-dependent dual clock boost circuit coupled to the second input terminal via a second boost circuit input and to the second gate terminal of the second transistor via a second boost circuit output.

Abstract: A power converting device, in one possible configuration, includes a chopper circuit with a first semiconductor switching device, a fast recovery diode, and an inductor of which one end is connected to a connection point connecting between the first semiconductor switching device and fast recovery diode; a series circuit, connected in parallel with the fast recovery diode, including a rectifying diode with a greater reverse recovery loss and a smaller forward voltage drop than those of the fast recovery diode, and a second semiconductor switching device. The second semiconductor switching device has a lower breakdown voltage and a smaller forward voltage drop than those of the first semiconductor switching device, is configured to turn on when the first semiconductor switching device is turned off, and is configured to turn off at a timing before the first semiconductor switching device shifts from an off-state to an on-state.

Abstract: One embodiment describes a quantum memory system. The system includes an array controller that comprises a plurality of flux pumps configured to provide write currents in a write operation and read currents in a read operation with respect to a plurality of quantum memory cells, the array controller being configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.

Abstract: Certain aspects of the present disclosure provide a voltage level shifting circuit employing a low latency, AC-coupled voltage boost circuit, as well as other circuits and apparatus incorporating such a level shifting circuit. Such level shifting circuits provide significantly lower latency compared to conventional level shifters (e.g., latency reduced by at least a factor of two). Offering consistent latency over the simulation corners, level shifting circuits described herein also provide significantly lower power consumption and reduced duty cycle distortion compared to conventional level shifters.

Abstract: In a spin-torque magnetic random access memory (MRAM) that includes local source lines, auto-booting of the word line is used to conserve power consumption by reusing charge already present from driving a plurality of bit lines during writing operations. Auto-booting is accomplished by first driving the word line to a first word line voltage. After such driving, the word line isolated. Subsequent driving of the plurality of bit lines that are capacitively coupled to the word line causes the word line voltage to be increased to a level desired to allow sufficient current to flow through a selected memory cell to write information into the selected memory cell. Additional embodiments include the use of a supplemental voltage provider that is able to further boost or hold the isolated word line at the needed voltage level.

Abstract: A memory device with word-line voltage boosting includes a set of first switches that are operable to couple a word-line of the memory device to a supply voltage to pull the word-line up to a rail voltage. A dummy line including a conductive route can be disposed in a vicinity of the word-line to form a parasitic coupling capacitance with the word-line. A second switch is operable to couple the dummy line to the supply voltage to pull the dummy line to the rail voltage. Pulling up the dummy line boosts the word-line voltage above the rail voltage by a boost voltage.

Abstract: Each one of a pair of CMOS transistors is formed in its own island and a gate terminal for each transistor is formed by a single, in-line conductor connecting both gate terminals together. This type of “in-line” connection achieves nearly a five-time improvement in the reduction of the ability of ionizing radiation particles to strike both transistors at the same time as compared to prior art “side-by-side” transistor stacking through use of a relatively smaller solid angle spanning the two transistors. This results in “hardening” of the transistors and improving their resistance to single event upsets and, thus, improving the soft error rate (SER) of the transistors.

Abstract: A voltage output circuit includes: an oscillator circuit configured to output an oscillation signal while changing an oscillation frequency thereof; and a voltage generating circuit configured to convert a first voltage into a second voltage higher than the first voltage, and output the second voltage, based on the oscillation signal.

Abstract: A circuit for driving a transistor includes a drive circuit, a first voltage boost circuit and a second voltage boost circuit. The drive circuit has a first specific node, a second specific node, and a third specific node coupled to a control node of the transistor. The drive circuit is arranged for coupling the first specific node to the third specific node according to at least a voltage of the first specific node and a voltage of the second specific node in order to charge the control node. The first voltage boost circuit is coupled between the first specific node and a connection node of the transistor, and is arranged for boosting the voltage of the first specific node. The second voltage boost circuit is coupled between the first specific node and the second specific node, and is arranged for boosting the voltage of the second specific node.

Abstract: A power-up initial circuit includes a power-up control unit, a first switch and a second switch. The power-up control unit is used for receiving a high voltage start-up signal, and generating a first power-up control signal. The first switch has a first terminal for receiving an external voltage, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal. The second switch has a first terminal coupled to the third terminal of the first switch, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal for coupling to a high voltage generator.

Abstract: Embodiments are provided that include a circuit for generating voltage in a memory. One such circuit includes a charge pump circuit including a first transistor, a high-voltage switch circuit, and a cut-off switch circuit arranged to reduce leakage current from the charge pump circuit. The cut-off switch circuit includes a second transistor, wherein an output of the charge pump circuit is coupled to one of a source node and a drain node of the second transistor, and a first control signal is input at a gate of the second transistor. Further embodiments provide a method for generating voltage. One such method includes enabling a first transistor coupled to an output of a charge pump circuit when the charge pump is operating and disabling the first transistor coupled to the output of the charge pump circuit when the charge pump circuit is not operating.

Abstract: A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.

Abstract: This document discusses, among other things, a control circuit, such as a translator circuit, configured to reduce voltage stress of first and second transistors when a first voltage received by the first transistor exceeds a voltage rating of at least one of the first or second transistors.

Abstract: In accordance with an embodiment, a method includes activating a first semiconductor switch having a first switch node coupled to a first input of a bootstrap circuit, a second switch node, and a control node coupled to a first end of a capacitor of the bootstrap circuit. A first end of the capacitor is coupled to the first input of the bootstrap circuit and a second end of the capacitor is set to a first voltage. Next, the first end of the capacitor is decoupled from the first input of the bootstrap circuit, and the second end of the capacitor is set to a second voltage. The control node is boosted to a first activation voltage that turns on the first semiconductor switch.

Abstract: A bootstrap capacitor detecting circuit includes a current source, for providing a discharging current; a first switch, for conducting connection between a system voltage and a bootstrap voltage node according to a power-on-reset signal, to charge the bootstrap voltage node; a second switch, for conducting connection between a current source and the bootstrap voltage node according to the power-on-reset signal, to discharge the bootstrap voltage node; and a detecting unit, for determining whether a bootstrap capacitor is connected normally according to a bootstrap voltage of the bootstrap voltage node after the current source discharges the bootstrap voltage node.

Abstract: A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current.

Abstract: Disclosed is a noise removing circuit including: a voltage booster which boosts an input signal; and a regulator which receives an output signal of the voltage booster and reduces the signal's voltage higher than a specific value to the signal's voltage having the specific value and then outputs the signal.

Abstract: A semiconductor device, includes: a first field effect transistor having one terminal to which a first electrical potential is given; a second field effect transistor having one terminal to which a second electrical potential smaller than the first electrical potential is given; a controller that controls each electrical potential of each control terminal of the first field effect transistor and the second field effect transistor; a capacitor element having one end connected to the control terminal of the first field effect transistor, the capacitor element being charged by the control of the controller; and a load element connected between another terminal of the first field effect transistor and another terminal of the second field effect transistor.

Abstract: An apparatus comprising a level shifter circuit and a control circuit. The level shifter circuit may be configured to generate a differential output in response to (i) a first differential input, (ii) a second differential input and (iii) a first supply. The level shifter circuit comprises a first pull down transistor pair operating with the first supply. The control circuit may be configured to generate the second differential input in response to (i) the first differential input and (ii) a second supply. The control circuit generally comprises a second pull down transistor pair operating with the second supply. The first supply has a higher voltage than the second supply.

Abstract: An embodiment of a discharge circuit for evacuating electric charge accumulated in circuit nodes of a charge pump during a discharge phase consequent to a shutdown of the charge pump is proposed. The charge pump is configured to bias each circuit node with a corresponding pump voltage during an operational phase of the charge pump. The discharge circuit includes a generator circuit configured to generate a discharge current during the discharge phase. The discharge circuit further includes means for evacuating the electric charge stored in each circuit node of the charge pump during a corresponding portion of the discharge phase; such means for evacuating include a respective discharge stage for each circuit node of the charge pump. Each discharge stage includes a first discharge circuit branch and a second discharge circuit branch coupled to the corresponding circuit node.

Abstract: A bootstrap circuit includes an input terminal, an inverting input terminal, an output terminal, an inverting output terminal, a first sub-bootstrap circuit, a second sub-bootstrap circuit, and a charging path providing circuit. The first sub-bootstrap circuit includes a first bootstrap capacitor, a first charging path, a first discharging path, and a first high voltage providing path. The charging path providing circuit includes a third charging path. In response to a high voltage level inputted into the input terminal, the first charging path and the third charging path are turned on, the first bootstrap capacitor is charged to a capacitor voltage, and the first discharging path is turned on to discharge the output terminal. In response to a low voltage level inputted into the input terminal, a first superimposed voltage including the high voltage level and the capacitor voltage is provided to the output terminal.

Abstract: In accordance with an embodiment, a circuit for driving a switch includes a driver circuit. The driver circuit includes a first output configured to be coupled to a gate of the JFET, a second output configured to be coupled to a gate of the MOSFET, a first power supply node, and a bias input configured to be coupled to the common node. The switch to be driven includes a JFET coupled to a MOSFET at a common node.

Abstract: Various exemplary embodiments relate to a tracking system and method. The system includes a transistor switch having a gate node and a source node, a power source circuit connected to the gate node, and a bootstrapping circuit connected to the source node and to the gate node. The power source circuit charges the switch during a first tracking phase, and the bootstrapping circuit charges the switch during a second tracking phase.

Abstract: A boot-strap circuit for a voltage converting device includes a boot-strap capacitor; a charging module, for charging the boot-strap capacitor; and a protection module, for detecting a capacitor voltage of the boot-strap capacitor and adjusting conducting statuses of one of an upper-bridge switch and a lower-bridge switch of the voltage converting device according to the capacitor voltage and a duty cycle signal utilized for controlling conducting statuses of the upper-bridge switch and the lower-bridge switch.

Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.

Abstract: A bootstrapped switch circuit includes a first switch transistor to receive an input signal and a second switch transistor to provide an output signal. The sources of the switch transistors may be coupled. A voltage source may be coupled to the sources of the switch transistors and at least one of the gates of the switch transistors. The voltage source may generate a control voltage to activate at least one of the switch transistors based on a bias current. A voltage source driver may be coupled to the voltage source to generate the bias current based on a bias voltage. The bias voltage may include a first voltage approximately corresponding to an overdrive voltage of at least one of the switch transistors and a second voltage approximately corresponding to a threshold voltage of the switch transistors.

Abstract: A half-bridge power circuit comprises a first gallium nitride field effect transistor (GaN FET); a first driver coupled to a gate of the first GaN FET; an anode of a capacitor coupled to an output of the driver and a source of the first GaN FET; a diode having a cathode coupled to the cathode of the capacitor; and a bootstrap capacitor clamp (BCC) controller, including: a field effect transistor (FET) coupled to an anode of the diode, and a comparator coupled to a gate of the FET, the comparator configured to receive as inputs: a) a signal representative of an input voltage (VDRV) applied to the FET; b) a ground; c) a boot signal representative of a voltage at the anode of the capacitor (Boot); and d) a signal representative of a voltage at the source of the first GaN FET (SW).

Abstract: An auxiliary capacitor line driving circuit (5), provided in a surrounding region located around a display region (R1) in a liquid crystal display panel, generates auxiliary capacitor driving signals, and includes: first and second voltage trunk lines (VCS1, VCS2) which carry two different voltages, respectively; at least one control signal line (VCTRL1, VCTRL2) carrying one control signal; and a plurality of TFTs (T1, T2, T3, T4) each alternately supplying, to the respective auxiliary capacitor lines (CSn, CSn+1, and the like) in a given cycle, the two different voltages supplied to the auxiliary capacitor line driving circuit (5). Therefore, a liquid crystal display device employing multi-picture element drive method can be provided as a liquid crystal display device that achieves narrowing of a picture frame region as a non-display region and an external circuit board.

Abstract: A level shift circuit includes an input port to which an input signal is input, a first signal amplifying unit configured to amplify the input signal input to the input port, a node at the first signal amplifying unit to output the amplified signal, a level shift input port to which a level shift voltage for controlling a DC level of the node is input, a first supply voltage configured to drive the first signal amplifying unit, and a level shift voltage generation circuit configured to generate the first supply voltage and the level shift voltage.

Abstract: A first pump circuit generates a first voltage for decreasing the distance between primary electrodes. The first voltage is limited to a predetermined limit by a first limiter circuit. A second pump circuit generates a second voltage for keeping the distance between the primary electrodes constant. A third pump circuit generates the second voltage and has a supplying capacity smaller than the first one. The second voltage is limited by second and third limiter circuits. A ripple capacitor is charged up to the second voltage by the second pump circuit and the second limiter circuit within a period of time the first voltage is being generated. When a supplying voltage of the first pump circuit reaches to the first voltage, and a deformation stops, the second voltage is supplied by the third pump circuit and the third limiter circuit instead of the second pump circuit and the second limiter circuit.

Abstract: A modified bootstrap circuit utilized, for example, in a high voltage DC/DC CMOS buck converter to convert a high input voltage (e.g., 24V) to a regulated voltage (e.g., 4V) for use, for example, by an LED driver circuit. The bootstrap circuit utilizes a feedback diode and a PMOS switch to avoid high reverse diode voltages across a low voltage bootstrap diode. A bootstrapped buck converter implements the bootstrap circuit to generate a high gate voltage on a high-side NMOS switch during all operating phases. The PMOS switch is controlled by the NMOS switch's output voltage to pass a system voltage (e.g., 5V) through the bootstrap diode whenever the output voltage drops low (e.g., 0V), and to shut off when the output voltage subsequently rises such that the feedback diode forward biases to pass the output voltage to the anode of the bootstrap diode.

Abstract: An integrated circuit (IC) comprises a transistor circuit and a voltage generator circuit. The voltage generator circuit is configured to generate an activation voltage for the transistor circuit using an output voltage at an output of the transistor circuit, and maintain a gate-source voltage (VGS) of the transistor circuit at a substantially constant voltage above the output voltage when a magnitude of the generated activation voltage is less than a device voltage rating of the IC and when the magnitude of the generated activation voltage meets or exceeds the device voltage rating of the IC.

Abstract: In one embodiment, a bootstrap switch circuit has (i) a switch device that selectively provides a input signal as an output signal and bootstrap circuitry that provides a relatively high-voltage control signal to the gate of the switch device to turn on the switch device while preventing any over-voltage conditions from being applied to the switch device. The bootstrap circuitry includes a capacitor and a number of transistors configured as either switches or inverters. The circuit has two operating phases: one in which the capacitor gets charged while the switch device is turned off and the other in which the charged capacitor is isolated and used to generate the high-voltage control signal to be a fixed voltage difference above the current voltage level of the input signal applied to the switch device, thereby preventing an over-voltage condition.

Abstract: A switch circuit is described, where a switch to be controlled is formed of two NMOS transistors having their source terminals connected together and their gate terminals connected together. Their drain terminals are the input and output terminals of the switch. A driver circuit controls a bootstrap circuit that is formed of a latching circuit and a capacitor. When the switch is in an off state, the driver circuit connects the capacitor to a charging voltage source for charging the capacitor to a bootstrap voltage, and applies a non-zero voltage across the latching circuit. When the driver circuit is controlled to turn on the switch, the driver circuit disconnects the capacitor from the charging voltage source, and the latching circuit becomes conductive and effectively connects the capacitor across the gate and source terminals of the switch to turn it on with the bootstrap voltage. The bootstrap voltage across the capacitor maintains the latching circuit in a latched conductive state.

Abstract: In accordance with an embodiment, a circuit for driving a switch includes a driver circuit. The driver circuit includes a first output configured to be coupled to a gate of the JFET, a second output configured to be coupled to a gate of the MOSFET, a first power supply node, and a bias input configured to be coupled to the common node. The switch to be driven includes a JFET coupled to a MOSFET at a common node.

Abstract: The invention provides a booster circuit including a first transistor, a second transistor, a first capacitor element, a second capacitor element, a diode, and an inverter, wherein one electrode of the first transistor is maintained at a predetermined potential, the output of the inverter is connected to the gate electrode of the first transistor and one electrode of the second transistor through the second capacitor element, the input of the inverter is connected to the other electrode of the first transistor through the first capacitor element and connected to the gate electrode of the second transistor, and the diode is connected between the other electrode of the first transistor and the other electrode of the second transistor so as to be forwardly biased.

Abstract: In accordance with an embodiment, a method of driving switches includes sensing a control node of a first switch, sensing a control node of a second switch, and driving the control node of the first switch to a first active state after the control node of the second switch transitions to a second active state. The method also includes driving the control node of the second switch to a second inactive state after the control node of the first switch transitions to a first inactive state. Driving the control node of the first switch is based on sensing the control node of the second switch, and driving the control node of the second switch is based on based on sensing the control node of the first switch.

Abstract: A track-and-hold circuit includes a bootstrapped clock generator and a track-and-hold unit. The bootstrapped clock generator receives an input voltage signal and generates a sampling control signal having a voltage level lower than or equal to a level of a power supply voltage by maintaining an initial level of a boost capacitor voltage at a level lower than the level of the power supply voltage. The boost capacitor voltage is a voltage that is charged across a boost capacitor included in the bootstrapped clock generator and the sampling control signal is generated based on a clock signal. The track-and-hold unit samples and holds the input voltage signal in response to the sampling control signal to generate a sampled signal.

Abstract: A circuit for recovering charge at the gate of an output transistor arranged to drive the output of a switching circuit such as a switching regulator or controller. A substantial portion of the charge for each switching cycle is recovered under a wide range of load conditions for the switching circuit, e.g., no load, partial load, or full load. Also, charge recovery operates effectively with a switching circuit that is arranged to switch in a synchronous or asynchronous manner. Additionally, if the output voltage of a switching circuit is 12 or more volts, the amount of charge that can be saved can be relatively substantial.

Abstract: A bootstrap circuit comprises: a first transistor connecting a first power supply with an output node; and a second transistor applying a first input signal to a gate node of the first transistor and having a conductivity type identical to that of the first transistor. A second input signal obtained by inverting a level of the first input signal, delaying the inverted signal, and adding a direct current bias to the delayed signal is inputted to a gate node of the second transistor.

Abstract: A highly efficient rectifier can readily replace a two-terminal diode. Its conduction losses are reduced from that of the two-terminal diode. Connected between the source and drain of a MOSFET including a parasitic diode are a micro-power converter section for boosting a conduction voltage Vds between the source and drain to a predetermined voltage, and a self-drive control section that operates based on a voltage output from the micro-power converter section. When the source and drain are conductive with each other, the micro-power converter section generates, from the conduction voltage Vds, a power source voltage for the self-drive control section, and the self-drive control section (4) continues drive control of the MOSFET.

Abstract: A bootstrapped switch circuit can include at least one transistor, to receive an input signal and allow the input signal to pass through as an output signal based on a control signal, and a voltage-controlled voltage source, to provide first and second voltages between a gate and a source of the at least one transistor in response to the control signal. The voltage-controlled voltage source can include a differential pair and a current source. A gate of one of the differential pair can receive the control signal and a gate of the other of the differential pair can receive a logical inverse of the control signal. The current source can provide a current to connected sources of the differential pair. The first voltage can turn on the at least one transistor and be produced in response to a first logic state of the control signal resulting in the current of the current source flowing entirely through a first one of the differential pair.

Abstract: Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit.