Abstract: A solid state high power microwave amplifier module. The module incorporates a stacked assembly of integrated low temperature cofired ceramic substrates forming a monolithic structure containing all the microwave circuitry required to combine the output power of a large number of monolithic microwave integrated circuit power amplifier chips, a heatsink and a power supply. One substrate defines an input radial power divider circuit for dividing the input signal into input signals for each power amplifier chip. The second substrate includes the power amplifier chips and a radial combiner circuit. The output of the combiner to coupled to an output waveguide in the heatsink. The module is lightweight and small in size, and of high reliability since the number of wire bonds is greatly reduced since most of the microwave circuitry and connections can be formed as part of the integrated structure.

Abstract: An extremely high frequency parasitic signal suppression circuit for use in a local oscillator of an extremely high frequency radio or satellite communication system to eliminate parasitic signals included in a local oscillation signal. A first direct current cut-off device consisting of a microstrip line is connected between the output terminal of a phase-locked oscillator and the input of an amplifier, and to a first low pass filter to supply a direct current source for the amplifier. A second direct current cut-off device and second low pass filter are connected to the output terminal of the amplifier in the same manner as the input terminal.

Abstract: The present invention is a high efficiency bi-directional spatial power combiner for extremely high frequency signals. In one embodiment, orthogonally polarized electro-magnetic waves are used to isolate signals going into and out of a planar array of amplifiers. A dual mode horn transmits vertically polarized fields to a MMIC planar array of amplifiers. Vertically polarized array elements receive the signals, amplify them, and retransmit back to the horn using horizontally polarized array elements. An ortho-mode transducer on the horn provides isolation for the two polarized signals. The backside of the array can be used for a heat sink, and to provide access for DC biasing of the array elements. In a second embodiment, monolithic grid oscillators are used in lieu of power amplifiers with orthogonal polarization array elements. The input signal and the output signal are of the same polarization. A circulator is used in lieu of an ortho-mode transducer to isolate the input signal from the output signal.

Abstract: A harmonic reaction amplifier (HRA) apparatus and method using a directional filter, including an HRA input for receiving an input signal, a divider coupled to the HRA input, the divider for splitting the input signal into a first divider signal and a second divider signal, an amplifier coupled to the divider, the amplifier for amplifying the first divider signal and the second divider signal, a directional filter coupled to the amplifier, the directional filter to filter the first and second divider signals to produce a filtered first divider signal and a filtered second divider signal, a combiner for combining the filtered first divider signal and the filtered second divider signal to produce an output signal, the combiner coupled to the directional filter, and an HRA output coupled to the combiner, the HRA output to receive the output signal from the combiner. The HRA can be used in a microwave radio.

Abstract: An n-stage amplifier circuit includes n+1 directional couplers connected in series between the circuit input, the amplifier stages, and the circuit output. Each coupler includes first and third ports forming an inverting interface, and second and fourth ports forming a non-inverting interface, the ports being coupled through suitable windings. Feedback lines are connected between adjacent successive couplers. The interfaces of the couplers are connected such that feedback loops covering one or more contiguous successive amplifier stages provide negative feedback for the amplifier circuit.

Abstract: A drain bias circuit for a high power FET having internal matching (10) for use in an amplifier operating in the microwave range. The circuit is characterized in that it comprises a transmission line constituted by a low impedance microstrip (20) of length .lambda.g/2 at the normal operating frequency, where .lambda.g is the length of the wave guided by the microstrip (20), and two RF choke coils (9a, 9b) which are connected to the center of the above-mentioned low impedance microstrip transmission line (20), thereby splitting the path of the drain current (I.sub.D) into two, which current is thus conveyed to the center of said transmission line, thus making it possible to maintain a load of 50.OMEGA. while ensuring that the FET (10) is properly biased.

Abstract: In an input matching circuit adapted to be connected to an input circuit of a low noise amplifier, a matching point of impedance conversion is set to a point shifted from a mean value of variations of an optimum signal source impedance of the low noise amplifier so that a change of noise index is gentle even if the optimum signal source impedance of the low noise amplifier includes variations.

Abstract: A radial power combining scheme is provided for combining a plurality of field-effect transistor-based amplifiers to form an amplifier circuit. The amplifier circuit includes input terminals for receiving high frequency power signals. A radial line power combiner/divider is provided for dividing the input signal amongst a plurality of amplifiers. The radial line power combiner/divider is further adapted to receive and combine the amplified signals which are then provided to an output. The circuit advantageously utilizes a plurality of three-port circulators for transmitting the signals within the circuit.

Abstract: In a low-noise multistage amplifier of this invention, operation currents of amplifiers in respective stages (in particular, first- and final-stage amplifiers) are set so that an optimal signal source reflection coefficient .GAMMA..sub.opt and S parameters are almost not varied by manufacturing variations. The lengths of source stubs connected to FETs of the amplifiers in the respective stages are optimally set in units of stages so that characteristics of the amplifier do not change due to the manufacturing variations, and a sufficient gain can be obtained.

Abstract: An active-type broadband power divider has a pair of distributed amplifiers which are coupled together by a distributed capacitive coupling to provide a predetermined phase shift between respective output signals thereof. The distributed amplifiers are in the form of a row of three-terminal transistors having their gates and drains connected to gate and drain lines. The gate and drain lines are artificial transmission lines. By distributing the capacitive coupling between the gate and/or drain lines, a constant 90 degree phase shift is obtained over the entire bandwidth of the artificial transmission lines. For a 180 degree phase shift, a third distributed amplifier is provided with distributed capacitive coupling between its gate or drain line and that of the second distributed amplifier.

Abstract: A radio frequency (RF) amplifier circuit includes an input matching network having a first port coupled to an input port of the circuit. The RF amplifier circuit further includes a high electron mobility field effect transistor (HEMT) having source, gate and drain electrodes with the gate electrode coupled to the second port of the input impedance matching network and means, coupled between the source electrode and a DC reference potential, for providing inductive feedback to the source electrode of the HEMT. The RF amplifier circuit further includes an output matching network having a first port coupled to the drain electrode of the HEMT. The output matching network comprises a first RF propagation network having a first end coupled to the first port of the output matching network and a second end coupled to a first electrode of a capacitor. A second electrode of the capacitor is coupled to a second port of the output matching network.

Abstract: A Monolithic Microwave Integrated Circuit (MMIC) amplifier with extended dynamic range includes a base circuit for receiving both a first input signal, which is the signal to be amplified, and an amplifier generated second input signal. A power amplifier in the base circuit directly receives and amplifies the first input signal, with some unavoidable distortion to the first input signal. A first directional coupler is connected with the base circuit to couple the output of the power amplifier with the first input signal to cancel the first input signal component from the output of the power amplifier and generate the second input signal which is only distortion. This distortion is then amplified by an error amplifier in the base circuit, and the output of the error amplifier is coupled with the output of the power amplifier through a second directional coupler. This coupling at the second directional coupler cancels the distortion from the output of the power amplifier to provide the desired amplified signal.

Abstract: Apparatus is disclosed in which a ring of microwave amplifiers are spaced around the top of a cavity closure structure containing upper and lower splitter and combiner cavities. The inputs and outputs of the amplifiers are connected by, respectively, input and output coaxial couplers to points in, respectively, the splitter and combiner cavities which are spaced radially outward of, and equiangularly around the centers of these cavities. In operation, input microwaves are distributed by the splitter cavity and input couplers to the amplifiers to be amplified by them in parallel, and the several microwave outputs of the amplifies are merged together by the output couplers and combiner cavity to provide a single amplified output. On the upper and lower sides of the splitter and combiner cavities are rigid metal plates with flat surfaces facing towards these cavities, and on the lower and upper sides of the splitter and combiner cavities are sheet metal dishes.

Abstract: A high efficiency RF power amplifier includes a field effect transistor having a grounded source, a gate receiving an input signal, and a drain. A first inductor has a first end coupled to the drain via a lead inductance, and a second end through which an amplified output signal is output. A first capacitor has a first end grounded and a second end coupled to the second end of the first inductor. A second inductor has a first end receiving a drain bias voltage and a second end coupled to the second end of the first inductor. The second inductor is formed of a distributed-constant element. The first capacitor and the second inductor form a parallel resonant circuit coupled to the drain at a fundamental operating frequency of the high efficiency RF power amplifier, so that the drain is set to a high-impedance state.

Abstract: A nonlinear processor for use as a signal limiter or predistortion equalizer includes a four-port, 3dB directional coupler. Signal to be distorted is applied to a first port of the coupler, and is coupled by second and third ports to a pair of nonlinear circuits. Each nonlinear circuit includes the source-to-drain transmission path of a FET. Each nonlinear circuit is grounded or short-circuited, to form a nonlinear reflective circuit which reflects the energy back to the associated port of the coupler. The nonlinearly reflected energy is received at the two coupler ports, and is combined and made available at the fourth coupler port. The input return loss of the processor is improved by matching the nonlinear circuits to each other.

Abstract: A reduced loss coupling technique for combining multiple, parallel, gain-stages to form an amplifier. A first transmission line, with multiple taps, couples the inputs of the gain-stages together and to an input port for the amplifier. A second transmission line, also with multiple taps, couples the outputs of the gain-stages together and to an ouput port for the amplifier. Preferably, the output port is connected to the end of the second transmission line while the input port is connected asymmetrically (off center) along the first transmission line. The actual position of the input port along the first transmission line is determined by the desired amount of phase mismatch of between signal paths through all of the gain-stages as measured from the input port to the output port.

Abstract: A pulse power amplifier comprises a driver stage and a following splitter/combiner stage for symmetrical power division. The driver stage is preceded by a switch-over device in the signal path, the switch-over device also being connected to a decoupled port of the splitter/combiner stage via an additional signal path.

Abstract: In a high frequency transistor power amplifier comprising a plurality of power transistors which are disposed in an annular arrangement, the input terminals of the transistors are connected to a common input through separate input matching circuits and a distributor circuit. The output terminals of the power transistors, on the other hand, are combined directly in a common output connection, without any intermediate matching circuits, this common output connection being connected to a single output matching circuit common to all the power transistors.

Abstract: Automatic Level Control (ALC) circuit having a directional coupler, for branching an output of an amplifier, and a detector, for detecting the branched output, is disclosed. When saturation of the amplifier is measured, coupling by the directional coupler is decreased and the input signal to the detector can be kept below a predetermined value.

Abstract: An octave band decade watt power amplifier is disclosed using compact and efficient MMIC fabrication techniques. The power amplifier is a two stage amplifier in which the driver transistor has two cells, and the power transistor has four cells, with each power cell double the size of the driver cells. Both transistors are of an optimized topology facilitating efficient broad band operation at matchable impedance levels. They are interconnected by three four section impedance matching networks of which the input network is coupled to a 50 ohm signal input terminal. The input and the interstage network are both formed on the same substrate as the transistors. The output network is formed on a separate substrate having a high dielectric constant (i.e. 37) which facilitates efficient and compact matching of four power transistor cells to a single output terminal for connection to a load at the conventional (50 ohm) impedance.

Abstract: A transceiver module includes a bi-directional amplifier having a pair of symmetric signal paths for amplification of both transmit and receive signals is described. The amplifier is a bi-directional amplifier and includes a pair of symmetric signal paths. The amplifier is disposed between a pair of r.f. switches to provide a pair of signal paths between two terminals of the module. A phase shifter is coupled between one of the terminals of the module and one of the r.f. switches, wherein the second terminal of the module is coupled directly to the other one of the pair of switches.

Abstract: An amplifier having band pass filters and resonators for injecting, mixing and downconverting, i.e., recycling, second and third harmonics to increase the amplifier's efficiency. Various aspects of amplifier design are developed for enhancing efficiency.

Abstract: Monolithic broadband semiconductor single-pole, double-throw switches are merged into distributed monolithic amplifiers and decrease the total semiconductor chip area occupied by the devices.

Abstract: In a particular embodiment, the invention is directed to a composite MMIC amplifier comprising a plurality of active devices (e.g., FET, HBT, HEMT) arranged on a semiconductor substrate and having inputs and outputs. A pair of input and output transmission lines are coupled in antiphase arrangement to corresponding inputs and outputs of alternate active devices. Each pair of input transmission lines has branched portions extending from a common polarized input terminal. Each branched portion of like polarity extends to a corresponding alternate input and output of an active device and crosses a branched portion of opposite polarity without interference. Impedance matching means is coupled across antiphase pairs of inputs and outputs of adjacent active devices and forms a virtual ground therebetween thereby simplifying the impedance matching circuit.

Abstract: A cascode transistor configuration includes an input terminal for receiving the input signal, an output terminal for outputting the output signal and bass and emitter terminals connectable to ground. Each of a predetermined plurality of common-base heterojunction bipolar transistors (HBTs) has a base coupled to the base terminal, and a collector coupled to the support output terminal. Each of the predetermined plurality of common-emitter HBTs is associated with one of the common-base HBTs. Each common-emitter HBT also has a base coupled to the input terminal, an emitter coupled to the emitter terminal, and a collector coupled to only the emitter of the associated common-base HBT.

Abstract: Disclosed is a microwave circuit suitable made into a monolithic microwave integrated circuit (MMIC). This microwave circuit includes a main line comprising a distributed constant line formed on a major surface of a substrate, and a stub connected in parallel with the main line in which lines the characteristics admittance varies discontinuously. Because of the discontinuous variation of the characteristic admittance of the stub, the phase of the characteristic admittance is changed, so that the stub length can be reduced.

Abstract: A hybrid matrix amplifier system that yields balanced thermal loads with minimal input signal constraints includes an input multiport hybrid coupler system having outputs joined to a plurality of amplifiers, and an output multiport hybrid coupler system joined to the outputs of the amplifiers. The input multiport hybrid coupler system, and the output multiport hybrid coupler system, each include n stages where n is an integer equal to or greater than 1, with each stage including 2.sup.n-1 couplers. These coupler systems may also include strategically-placed phase shifters. Such systems also include N amplifiers where N is equal to 2.sup.n, with N inputs from the outputs of the input multiport hybrid coupler system, and with the outputs of the amplifiers connected as inputs to the output multiport hybrid coupler system. This configuration permits a division of the N amplifiers into two groups that each dissipates substantially the same quantity of heat energy.

Abstract: A radio frequency amplifier includes a first pair of quadrature couplers arranged to provide in response to an input signal first and second radio frequency signals having equal amplitudes and a first single-ended amplifier is fed by said first radio frequency signal to provide at an output thereof an amplified first signal having frequency components corresponding to a fundamental frequency of the input signal and second order products of the input signal. A second single-ended amplifier is fed by said second radio frequency signal for providing at an output thereof an amplified, second signal having second order products of the input signal and 180.degree. phase shifter frequency of the input signal.

Abstract: A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load.

Abstract: A high gain, low noise amplifier having an active load with an inductor. The circuit may be fabricated, into a microwave monolithic integrated circuit using GaAs field effect transistors. The amplifier input is connected to the gate terminal of a first MESFET. A DC voltage source is connected to the drain terminal of the first MESFET via a low noise active load device having a second MESFET. The load device also includes an inductor connected between the drain terminal of the first MESFET and the source terminal of the second MESFET. The output terminal of the amplifier is connected to the drain terminal of the first MESFET.

Abstract: A wide-band amplifier using a plurality of transistors used in transmission, voice, applications video, high-vision in CATV, etc., for example. In the wide band amplifier, an input signal is applied in common across the respective bases and corresponding emitters of the plurality of transistors and the respective output currents are withdrawn from the transistor collectors. Thus, the output currents of the transistors are reduced, possible distortions in the outputs are greatly reduced, the upper operating frequency limit (f.sub.T) is increased to about 3 GHz, and possible distortions in the output currents of the transistors are cancelled by inserting in the input circuit a transistor having the same characteristic as the first mentioned transistors.

Abstract: There is disclosed a cavity closure unit for a microwave amplifier containing smaller and larger diameter, upper and lower, divider and combiner cavities on vertically opposite sides of a central part of such unit and disposed between top and bottom parts, respectively, of such unit, each cavity being bounded on a vertical side thereof by an alternation of concentric ridges and valleys. Improvements for such unit are as follows. The central part includes a discontinuity between upper and lower portions which may be a spatial discontinuity permitting removal from each other of the two cavities. The discontinuity may also be one of materials. The closure unit may have below its top, an outside annular notch of "L" vertical cross section providing a seat for downwardly extending feet on the rear ends of amplifier modules mounted in carousel fashion on top of the unit.

Abstract: The disclosure relates to a circuit to reduce the gate loss in a semiconductor travelling wave power amplifier using series capacitors on the gate feeding lines for a distributed amplifier design. The circuit arrangement significantly increases the gate width of the amplifier with a resultant increases of the broadband output power and efficiency.

Abstract: A transceiver module includes a bi-directional amplifier having a pair of symmetric signal paths for amplification of both transmit and receive signals is described. The amplifier is a bi-directional amplifier and includes a pair of symmetric signal paths. The amplifier is disposed between a pair of r.f. switches to provide a pair of signal paths between two terminals of the module. A phase shifter is coupled between on of the terminals of the module and one of the r.f. switches, wherein the second terminal of the module is coupled directly to the other one of the pair of switches.

Abstract: An electromagnetic signal processor is disclosed comprising an input waveguide, an intermediate waveguide, and an output waveguide. The intermediate waveguide comprises two portions having substantially equal electromagnetic impedances. The two portions of the intermediate waveguide are coupled to each other at a first and a second junction. The input and output waveguides are electromagnetically coupled to the intermediate waveguide at the first and the second junctions, respectively. Electrically coupled to the intermediate waveguide is a semiconductor device responsible for processing input electromagnetic signals. The input waveguide functions to receive and direct an input electromagnetic signal to the first junction of the intermediate waveguide. At the first junction, the intermediate waveguide separates the input signal into two signals having substantially equal amplitudes.

Abstract: Transversal and recursive filters having an input propagation lumped element network with a band pass filter response, a low pass filter response, or a high pass filter response, and an output propagation network having a low pass frequency response, a high pass frequency response, or a band pass frequency response are described. Weighting means including a plurality of field effect transistors are used to successively couple the input propagation network and the output propagation network. The general shape or response of the transversal filter is provided by choosing the characteristics of the input and output propagation networks in relation to the desired filter response. With the general shape provided by the propagation networks rather than only by the transversal elements, fewer transversal elements are required to provide a desired response.

Abstract: A radio frequency matrix amplifier includes an input propagation network for successively connecting input electrodes of a first plurality of transistors. Output electrodes are successively coupled by an intermediate propagation network. The amplifier also includes a second plurality of transistors, having input electrodes successively coupled by the intermediate propagation network and output electrodes successively coupled by an output propagation network. A bias circuit for the amplifier includes an inductor connected between a last one of the second plurality of transistors and the intermediate propagation network and a plurality of capacitors disposed to connect reference electrodes of the second plurality of transistors to a reference potential. With this arrangement stages are connected in series for D.C. potentials and in cascade for r.f. potentials.

Abstract: A distributed amplifier has a plurality of amplifying sections which are connected between input and output lines comprising artificial transmission line sections. Input line attenuation compensThis invention was made with U.S. Government support awarded by the Department of the Navy, Contract No.: N00014-87-C-0157. The U.S. Government has certain rights in this invention.

Abstract: In a microwave integrated circuit, a series circuit of an inductive element and a variable capacitance element is inserted between an source of a field effect transistor of an initial stage circuit and ground. The capacitance of the variable capacitance element is controlled by an input signal applied to an external terminal so that an input impedance of the initial stage circuit is properly changed by the input signal applied to the external terminal. Thus, it is possible to set a system to an input matching characteristic which has a noise matching characteristic and a gain matching characteristic which fit to a system specification.

Abstract: A cross-fed FET power-chip amplifier employing a plurality of stages each having two FET devices. Wide band four port directional couplers couple the stages, each having an input, and output and two driver input terminals. An input signal is connected to the input terminal and the coupler is designed to produce a majority of the output at the output terminal and a lesser output at each of the driver input which have a 90.degree. phase relationship. Each driver input is connected to one gate of the two FET device, the sources of which are connected to common and the drains of which are connected together by a broadband 90.degree. coupler to accommodate the 90.degree. offset at the gates. The output of the broadband coupler is connected to the input terminal of the directional coupler of each subsequent stage and one or more combiners are coupled to the output terminals of the directional coupler of each stage and the broadband coupler of the final stage to drive an output signal.

Abstract: A high frequency amplifier including a field effect transistor as the amplifying element, includes an output detection section stripline for detecting the level of the output signal from the field effect transistor conducting main amplification, a pair of resistors connected between the both ends of the output detection section stripline and ground, a second field effect transistor to the gate of which a resistor from one end of the output detection section stripline is connected, the source or drain of the second field effect transistor being connected to the gate bias circuit of the main amplifying FET for controlling the drain current of the main amplifying FET in response to the output signal level of the main amplifying FET.

Abstract: A high-frequency circuit includes a field-effect transistor having a gate electrode for receiving a high-frequency input signal, a source electrode and a drain electrode. Substantial improvements in both maximum gain and high-frequency performance are achieved by providing an input or output terminal at one end of each electrode, and terminating at least one of the electrodes with an appropriate impedance at its second end.

Abstract: A power amplifier circuit utilizes vertical power transistors, such as static induction transistors, field effect transistors, or bipolar junction transistors, in a configuration where an ungrounded terminal serves as a common node while a separate reference terminal is connected directly to ground. A transformer of appropriate bandwidth couples an rf input signal to the input terminals of the transistor such that the input terminals are floating relative to ground. The novel amplifier circuit establishes separate electrical paths between the common terminal and the input circuit and between the common terminal and the output circuit. Thus, negative feedback is not present in the common lead, thereby improving gain, power output, and efficiency. Moreover, the circuit, in either a BJT, FET, or SIT configuration, can be fabricated on thinned semiconductor chips to form a transistor package in which the chips are bonded directly to the package heatsink.

Abstract: A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and a first ouput terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between the first input terminal and a second output terminal. Separate bias circuits are provided to the input electrodes and the output electrodes of the first and second channels. Bias signals fed to the input bias circuits and coupled to the input electrodes to place the FETS in an "on" state to provide gain to r.f. input signals fed thereto, or in a "pinch-off" state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 1.times.2 signal splitter or a 1.times.2 switch which provides gain to a signal is provided.

Abstract: A paralleled amplifier arrangement includes a plurality of amplifier modules, the output ports of which are coupled to a common combining node. Switches are coupled to the output ports for selectively decoupling one or more of the amplifier modules from the combining node during those intervals in which the amplifier modules are held in reserve or are nonfunctional. Each amplifier module is associated with an isolation resistor which is coupled to all the isolation resistors. In order to reduce losses attributable to the isolation resistors when the decoupling switches are operated, the isolation resistors are each coupled to a switched network which decouples the isolation resistors associated with the decoupled amplifier modules.

Abstract: The invention provides a device including a radial combiner for electromagnetic waves and a method using a radial combiner. The invention provides a radial combiner with resistors disposed between the impedance matches capable of combining these signals from a plurality of radially disposed amplifiers or transmitters. By applying desired phase shifts to the signals transmitted by certain amplifiers or transmitters, amplitude-phase modulation of the total signal transmitted can be provided. It is more particularly possible to provide radar pulse modulation for reducing the frequency spectra of the transmitted signal.

Abstract: A microwave power amplifier which divides the microwave input signal into a plurality of equal segments with each segment being transmitted through a separate amplifying circuit. Each segment is then supplied into a combiner chamber with these signals being recombined and being transmitted in the ambient through an outlet chamber. Incorporated with the amplifier are a plurality of sockets which are removably attached to the amplifier housing. Each socket is to connect between the signal divider chamber and the signal combiner chamber of the amplifier housing with each socket functioning to receive and amplify a signal.

Abstract: A high power amplifier combiner for improving the linearity of an output of an amplifier. At least two prelinearizers are used to suppress all distortion products by using feedforward cancelling techniques. The effects of compression associated with the operation of the high power amplifier are reduced.

Abstract: The requirements of extreme miniaturization, remote operation, wide bandwidth, good reproducibility in high quantities, low cost and low insertion loss are met with an incrementally adjustable distributed network arrangement in the general configuration of a distributed amplifier. The arrangement comprises delay elements (Z.sub.Dm, Z.sub.Gm) and a plurality of controlled sources (T.sub.n-2, T.sub.n-1, T.sub.ni VCCS), a signal input (E) and a signal output (A). The controlled sources (T.sub.n-2, T.sub.n-1, T.sub.ni VCCS) may be selectively turned on and off. Dual gate FETs (T.sub.1, . . . T.sub.n) are employed as controlled sources, whose first gate (G.sub.1) is connected to the input signal voltage through delay elements (Z.sub.Gm) and whose second gate (G.sub.2) is maintained at suitable dc voltages for turning the respective FETs on and off.

Abstract: An improved, switched, power splitter is described in which a high frequency input signal is applied via an input to a plurality of amplifiers. First transmission lines are connected between the input and each of the amplifiers, the impedance of each of the first transmission lines being alterable to either a high or low level. A balanced resistance network is preferably coupled between the first transmission lines. Second transmission lines are connected in shunt across the first transmission lines, the impedance of each second transmission line being alterable to an impedance which is a predetermined percentage of the circuits input impedance. A control circuit switches the various transmission lines so that the impedance at the input remains balanced, no matter how many of the first transmission lines are in the high impedance state.