Abstract: Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductive element, a second shunt inductance, and a shunt capacitor coupled in series. Instead of a separate inductive element, the second shunt inductance may be achieved via magnetic coupling of the first shunt inductive element and an envelope inductive element of a video bandwidth circuit that is coupled between an RF cold point node (between the first and second shunt inductances) and the ground. Alternatively, an envelope inductance in the video bandwidth circuit may be achieved via magnetic coupling of first and second shunt inductive elements. A better RF cold point may be achieved without physically incorporating separate inductive elements, allowing for reduction in cost and size.

Abstract: An amplifier arrangement comprises N amplifier stages 101 to 10N, wherein N is an integer equal or greater than five. The amplifier arrangement comprises a cascade of quarter wavelength transmission line segments 111 to 11M coupled between an output of an amplifier of a first amplifier stage and an output node 15 of the amplifier arrangement. At least one intermediate junction 12 in the cascade of quarter wavelength transmission line segments comprises: a first amplifier coupled directly to the intermediate junction 12; and a second amplifier coupled to the same intermediate junction 12 via a connecting quarter wavelength trans mission line 131.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Abstract: A device and a method for utilizing the device for radio-frequency (RF) power coupling, particularly a power combiner and/or divider, includes a box shaped casing forming the outside conductor, and connectors for inputting and outputting RF-power, which are electrically connected to at least one center conductor, where the electrical connection between the connectors and the at least one center conductor is a direct electrical and mechanical connection.

Abstract: A power combining and outphasing system and related techniques for simultaneously providing both wide-bandwidth linear amplification and high average efficiency is described. Providing linear amplification encompasses the ability to dynamically control an RF output power level over a wide range while still operating over a wide frequency bandwidth. The system and techniques described herein also operate to maintain high efficiency across a wide range of output power levels, such that a high average efficiency can be achieved for highly modulated output waveforms.

Abstract: Embodiments for a power amplifier that can increase a low-frequency resonance frequency are provided. The power amplifier includes a power amplifying transistor die, a first metal oxide semiconductor capacitor, a direct current decoupling capacitor, and an output matching network, where: a drain of the power amplifying transistor die is connected to a first end of the first metal oxide semiconductor capacitor by using a bonding wire, and a second end of the first metal oxide semiconductor capacitor is grounded; the drain of the power amplifying transistor die is directly connected to the output matching network by using a bonding wire; a source of the power amplifying transistor die is grounded; the first end of the first metal oxide semiconductor capacitor is connected to one end of the direct current decoupling capacitor by using a bonding wire; and the other end of the direct current decoupling capacitor is grounded.

Abstract: This invention is about the switched multiplexers used for adaptive filtering in systems operating in signal dense environments such as electronic warfare systems. The aim of this invention is to design a switched multiplexer with lower input/output return losses and having lower level of destructive interaction between channels compared to the known examples.

Abstract: The present disclosure includes dynamic power divider circuits and methods. In one embodiment, a dynamic power divider includes first and second quarter wave lines that receive an input signal and produce first and second signal on second terminals of the lines. Dynamic power division of the input signal uses a variable impedance circuit between the second terminal of the first quarter wave line and the second terminal of the second quarter wave line. The variable impedance may reduce impedance between two output paths as the input signal power increases or increase impedance between the output paths as the input signal power decreases.

Abstract: A distributed amplifier is disclosed having a plurality of amplifier sections, each having an input gate and an output drain, and a first plurality of inductive elements coupled in series between a DA input terminal and a gate termination terminal to form a first plurality of connection nodes. Each of the connection nodes is coupled to a corresponding adjacent pair of the first plurality of inductive elements and to a corresponding input gate of the plurality of amplifier sections. A second plurality of inductive elements is coupled in series between a drain termination terminal and a DA output terminal to form a second plurality of connection nodes, each being coupled to a corresponding adjacent pair of the second plurality of inductive elements and to a corresponding output drain of the plurality of amplifier sections. An active impedance termination circuitry has a termination output coupled to the drain termination terminal.

Abstract: An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.

Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.

Abstract: Embodiments relate to outphasing amplifiers and amplification. One example system includes a signal splitter configured to receive an input signal and output a plurality of signals, wherein the signal splitter shifts each of the plurality of signals by a distinct phase based at least in part on a power of the input signal; a plurality of power amplifiers (PAs), each configured to amplify a distinct signal of the plurality of signals to generate a distinct amplified signal; a plurality of input matching networks, each coupled to a distinct PA of the plurality of PAs and configured to transform an input impedance of the coupled PA to an outphasing load condition based on the distinct signal the coupled PA is configured to amplify; and a combiner configured to combine the plurality of distinct amplified signals to generate an amplified input signal.

Abstract: An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

Abstract: A method for improving circuit stability is disclosed. In the method of the present invention, the circuit is analyzed to find the frequency band in which the input impedance at a target node behaves as a negative resistance, and then find the signal path of the frequency band in the matching circuit in front of the target node and add an attenuator in the signal path. This prevents the circuit from oscillation and improves the stability of the circuit. Furthermore, the signal on the main signal path will not be attenuated and the performance of the circuit will be maintained.

Abstract: A distributed amplifier includes: an input-side transmission line; M amplification circuits; M output-side transmission lines; and a combination circuit configured to combine outputs of the M output-side transmission lines; wherein the input-side transmission line has an input-side serial line formed by connecting in series M×N unit transmission lines each including the same line length, and an input-side terminating resistor, the M amplification circuits each includes N amplifiers and the N amplifiers of the i-th amplification circuit take the input node of the ((k?1) M+i)-th input-side transmission line to be the input, and the output-side transmission line includes an output-side serial line including N transmission lines each being connected in series between the neighboring outputs of the N amplifiers and each having a line width in which the phase of the output of the amplifier in each stage agrees with one another.

Abstract: An amplifier circuit with at least one basic transistor, at least one load transistor, and at least one impedance element, the basic transistor being connected to the impedance element and the load transistor, an amplifier input and output, the amplifier input being connected to the gate contact of the basic transistor and the amplifier output being connected to a source contact of the load transistor. Here the amplifier circuit has at least two combined amplifying cells, with each combined amplifying cell respectively including a basic transistor, a load transistor, and an impedance element, with the basic transistor and the load transistor being non-complementary single-pin transistors, and arranged cooperating with the impedance element, and every combined amplifying cell has an input and an output, which cell input being connected to a gate contact of the basic transistor and which cell output being connected to a contact of the impedance element.

Abstract: A traveling-wave amplifier includes a plurality of amplifier cells, an insulating layer, an input line, and an output line. The plurality of amplifier cells is provided on a semiconductor substrate. Each of the amplifier cells receives an input signal and generates a part of an output signal from the input signal. The insulating layer is provided on the semiconductor substrate. The input line is used to externally receive an input signal and to transmit the input signal to the amplifier cells respectively. The output line is used to transmit the output signal generated by the amplifier cells and to externally output the output signal. The thickness of the input line is smaller than the thickness of the output line, and the input line and the output line are provided on the same insulating layer.

Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.

Abstract: A mm-wave antenna apparatus with beam steering function that includes: a Butler Matrix feeding network; a plurality of power combiners, each power combiner having one input and N outputs, configured to apply equal phase and power to a phase distributed output signal generated by the Butler Matrix feeding network and to generate N processed signals; and a plurality of millimeter wave switched beam planar antenna arrays having at least 1.5 GHz of bandwidth and located on a top low loss dielectric substrate, each antenna array of N elements, configured to obtain direct and narrow width beams from the N processed signals combined by each power combiner.

Abstract: Systems and methods for using power dividers for improved ferrite circulator RF power handling are provided. In one embodiment, a method for switching RF power using a high power circulator switch comprises: operating a ferrite circulator switch to direct RF power to either a first output port or a second output port, the ferrite circulator switch comprising at least three ferrite circulators arranged as a triad switch, wherein a first circulator is coupled to the first output port, a second circulator is coupled to the second output port; and using a waveguide power divider coupled between the first circulator and the second circulator, distributing reflected RF power received at the first output port or the second output port between a plurality of waveguide loads.

Abstract: An integrated circuit includes a transistor, and an impedance matching circuit coupled with the transistor. The impedance matching circuit includes a signal line to transmit a high-frequency signal and a power supply line that is a short stub branched from the signal line and supplies current to the transistor. The power supply line includes a bent line and a shortcut line to shortcut the bent line.

Abstract: Parallel capacitors (5c and 5d) of impedance matching circuits (5) which are connected to two transistors (1), respectively, have their first ends connected to a ground through via holes (5e and 5f) that are used in common, respectively. Although a conventional circuit necessitates via holes by the number equal to the number of stages multiplied by the number of cells of the transistors (1) for an LPF type impedance matching circuit (3), the present circuit can halve the number of via holes of the LPF type impedance matching circuit (5), thereby being able to downsize the circuit.

Abstract: A power combining arrangement includes an input divider waveguide and an output combiner waveguide, and a first and second amplifier. The power combining arrangement is configured to amplify RF energy having a characteristic wavelength ?. The first amplifier has a first input electrically coupled with a first output port of the divider waveguide. The second amplifier has a second input electrically coupled with a second output port of the divider waveguide. The first and second output ports are separated by a first distance corresponding to a phase delay Ø1, the first distance being selected substantially independently of the characteristic wavelength. The first amplifier has a first output electrically coupled with a first input port of the combiner waveguide and the second amplifier has a second output electrically coupled with a second input port of the combiner waveguide. The first and second input ports are separated by the first distance.

Abstract: An amplifier circuit includes: plural transistors; plural first transmission lines respectively connected between input terminals of the plural transistors; plural second transmission lines respectively connected between output terminals of the plural transistors; an input node connected to the input terminal of a first stage transistor among the plural transistors; an output node connected to the output terminal of a final stage transistor among the plural transistors; and a capacitance connected to the output terminal of the first stage transistor via a third transmission line.

Abstract: A Radio Frequency (RF) filter configured by combining a hybrid coupler with a general filter, for having different characteristics from original characteristics of a general filter is provided, in which a coupler receives an input signal through a first port, divides the input signal, outputs the divided signals through second and third ports, combines signals received through the second and third ports according to phases of the signals, and outputs the combined signal through the first port or as an output signal of the RF filter through a fourth port, and a first filter unit has a first port connected to the second port of the coupler and a second port connected to the third port of the coupler, for having a predetermined frequency filtering characteristic.

Abstract: A gallium nitride (GaN) radio frequency integrated circuit (RFIC) is configured to receive and amplify a low-level WiFi signal to generate a WiFi transmit signal. By using a GaN RFIC, the performance of the RFIC is significantly improved when compared to conventional RFICs for WiFi signals. In one exemplary embodiment, the RFIC has an error vector magnitude less than 29 dBc, an average power output around 29 dBm, and an average power added efficiency of greater than 25%. In additional embodiments, the RFIC has a gain greater than about 32 dB and a peak output power around ?37 dB.

Abstract: An ultra-wideband high-power solid-state transmitter for electronic warfare applications which includes a plurality of wideband Gallium-Nitride (GaN) semiconductor monolithic-microwave integrated circuits (MMICs), a spatial power combiner to sum the aggregate contribution of the MMICs, a wide bandwidth small form factor driver amplifier module to supply the required gain in the transmitter, and a thermal management system.

Abstract: A device for coupling RF power into a waveguide includes a push-pull output stage that includes an input and an output, a filter arrangement that is connected to the output of the push-pull output stage, and an induction loop that is connected to the filter arrangement is provided.

Abstract: A multiple-series amplifying device (100) of the present invention includes multiple series of amplifiers (110, 120) which are formed in parallel so as to input and output signals individually. Each of multiple-series of amplifiers (110, 120) includes a plurality of semiconductor amplifying elements (111, 112, 121, 122) which are driven in parallel so as to amplify signals. A pair of semiconductor amplifying elements (112, 121) adjoining together in a pair of amplifiers (110, 120) is formed in a single package (130).

Abstract: An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.

Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.

Abstract: A high efficiency power amplifier of the present invention includes a transistor and an output power processing circuit section. The output power processing circuit section includes an output matching circuit section and an output harmonic processing circuit section. The output matching circuit section carries out impedance matching to the fundamental wave component of the output power. The output harmonic processing circuit section carries out a reactive power control to a reactive power of a plurality of harmonic power components respectively having a plurality of harmonic angular frequencies which are integral multiples of the base angular frequency of the output power. The output harmonic processing circuit section is formed to realize the reactive power control to at least one of the plurality of harmonic power components by orthogonalizing the phases of the current and voltage in the reactive power.

Abstract: An adjustable power splitter includes: a power divider with an input and a plurality, N, of divider outputs; a plurality, N, of adjustable phase shifters and a plurality, N, of adjustable attenuators series coupled to the divider outputs and providing a plurality, N, of power outputs; an interface; and a controller. The controller is configured to receive, via the interface, data indicating phase shifts to be applied by the adjustable phase shifters and attenuation levels to be applied by the adjustable attenuators, and to control, based on the data, the phase shifts and attenuation levels applied by the adjustable phase shifters and the adjustable attenuators.

Abstract: A ganged circulator device for isolating a transmitter and increasing the power level, isolation performance, and input VSWR performance of an IBOC combiner module is provided. The ganged circulator device includes an input power divider, a ganged circulator module, and an output power combiner. The input power divider includes a first input port, a second input port, and a plurality of output ports. The ganged circulator module includes a plurality of circulators and a plurality of load resistors. The module also includes input ports corresponding to and electrically connected to the plurality of output ports on the input power divider. The output power combiner includes a first output port, a second output port, and plurality of input ports corresponding to and electrically connected to a plurality of output ports of the ganged circulator module.

Abstract: A cascode gain stage apparatus includes an input transistor having an RF input node and a transistor output node, an output transistor having a transistor input node and an RF output node, and a DC blocking capacitor connected between the transistor input and transistor output nodes.

Abstract: An adjustable power splitter includes: a power divider with an input and a plurality, N, of divider outputs; a plurality, N, of adjustable phase shifters and a plurality, N, of adjustable attenuators series coupled to the divider outputs and providing a plurality, N, of power outputs; an interface; and a controller. The controller is configured to receive, via the interface, data indicating phase shifts to be applied by the adjustable phase shifters and attenuation levels to be applied by the adjustable attenuators, and to control, based on the data, the phase shifts and attenuation levels applied by the adjustable phase shifters and the adjustable attenuators.

Abstract: Certain embodiments relate to a waveguide/coplanar waveguide (CPW) transition assembly adapted to transition RF signals from a waveguide to a coplanar waveguide (CPW), the waveguide/CPW transition assembly having at least some peripheral walls and including a central waveguide transition septum having the CPW disposed therein. The waveguide/coplanar waveguide (CPW) transition assembly includes an electronic component coupled to the CPW, and control circuitry operationally coupled with the electronic component. Portions of the control circuitry at least partially extend from outside of the at least some peripheral walls to within the at least some peripheral walls.

Abstract: The presence or absence of touch is detected according to a difference of a capacitance caused by the presence or absence of a material that blocks the electric field formed between the detection electrode and the common electrode. The common electrode includes a plurality of divided electrode portions that is extended in a lateral direction and aligned with each other in a longitudinal direction. Each of the plurality of common lines is electrically connected to at least one of the divided electrode portions. The plurality of common lines is arranged in an area next to the common electrode in the lateral direction of the common electrode, arranged next to each other in a width direction orthogonal to a length thereof, is different in width from each other, and the width of the common lines is wider as the length is longer.

Abstract: An active circulator for a microwave system. The microwave system includes at least one front-end arrangement. Each front-end arrangement includes a power amplifier function arranged to deliver an amplified output signal via a circulator function to an antenna in a transmit mode. A low noise amplifier function is arranged to amplify an input signal from the antenna via the circulator function in a receive mode. The circulator function is arranged to direct a signal flow between the transmit and receive modes. Each front-end arrangement includes one active circulator. The active circulator includes the power amplifier function, the low noise amplifier function and the circulator function of directing a signal flow. The functions integrated into one module. Also, a method to manufacture the active circulator.

Abstract: Disclosed embodiments include a direct current to direct current (DC-DC) converter including one or more charge pumps and configured to receive an input voltage and a first clock signal and a second clock signal. The first clock signal and second clock signal may be non-overlapping, and each may alternate between a ground voltage and a first voltage. The DC-DC converter may be configured to produce an output voltage over the clock cycle that has a negative polarity with a magnitude substantially equal to a sum of magnitudes of the input voltage and an integer multiple of the first voltage, the integer multiple being equal to a number of the one or more charge pumps in the DC-DC converter.

Abstract: This invention provides a novel electronically tunable active duplexer for wireless transceiver applications. It relates to an active duplexer with full-duplex operation, permitting simultaneous transmission and reception of signals at same or different frequencies. Instead of incorporating fixed or mechanically adjustable capacitors, and even instead of incorporating varactor diodes, it incorporates one or more capacitance tuning circuit in phase shifting networks enabling one to electronically tune, with ease and precision, the frequency at which isolation is desired, over a band in both transmit and receive modes of operations.

Abstract: An apparatus having an input transmission line, a plurality of amplifiers and an output transmission line is disclosed. The input transmission line may include a plurality of first inductors configured to receive an input voltage. The amplifiers may be configured to generate a plurality of intermediate currents by amplifying a plurality of intermediate voltages at a plurality of first nodes between the first inductors. The output transmission line generally includes a plurality of second inductors configured to generate an output current at an output node by combining the intermediate currents. Each of a plurality of second nodes connected to the second inductors may transfer a plurality of the intermediate currents. Each of the second inductors generally has a different one of a plurality of inductance values.

Abstract: A wireless device is described. The wireless device includes a tunable front end module. The tunable front end module includes a Tx microelectromechanical system bandpass filter. The tunable front end module also includes a first Rx microelectromechanical system bandpass filter. The wireless device also includes a power amplifier. The wireless device further includes a low noise amplifier.

Abstract: Various embodiments may provide a monolithic transformer for a radio frequency (RF) power amplifier module, such as a microwave frequency power amplifier module. The transformer may include a plurality of pairs of edge-coupled transmission lines, with individual pairs including first and second edge-coupled transmission lines. The first transmission lines may include first ends coupled with one another and second ends coupled with an input terminal of the transformer. The second transmission lines may include first ends coupled with the input terminal and second ends coupled with an output terminal of the transformer. The transformer may pass a communication signal from the input terminal to the output terminal, and provide a first impedance at the input terminal and a second impedance at the output terminal. The second impedance may be higher than the first impedance (e.g., by a factor of four).

Abstract: A cascode amplifier includes: first transistors; second transistors cascode-connected with respective first transistors; a first line connected at spaced points to control terminals of the first transistors; a second line connected at spaced points to control terminals of the second transistors; and a capacitance connected between one end of the second line and ground. The second line includes at least two lines connected in parallel with each other.

Abstract: An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

Abstract: An improved distributed amplifier (200) includes an input transmission line (201) terminated with an input lead configured to accept an input signal and an output transmission line (202) terminated with an output lead configured to output an output signal. A number of parallel amplifier cells (204N) are connected to the input transmission line (201) and the output transmission line (202) that collectively amplify the input signal from the input lead to produce an amplified output signal at the output lead. A bypass switch (212, 300) is connected to the input and output transmission lines (201, 202). The bypass switch (212, 300) is operative to convert either the input transmission line (201, 301) or the output transmission line (202, 302) into a bypass line configured to bypass the parallel amplifier cells (204N) of the distributed amplifier (200) and provide a direct path between the input and output transmission lines (201, 202) to produce a bypassed output signal at the output lead.

Abstract: Disclosed is a matrix distributed amplifier (DA) having an input transmission line, an intermediate transmission line, and an output transmission line. A first plurality of amplifiers has inputs coupled to and spaced along the input transmission line and has outputs coupled to and spaced along the intermediate transmission line. A second plurality of amplifiers has inputs coupled to and spaced along the intermediate transmission line and has outputs coupled to and spaced along the output transmission line. A termination amplifier has an input coupled to the input transmission line and an output coupled to the intermediate transmission line. In at least one embodiment, a second termination amplifier has an input coupled to the intermediate transmission line and an output coupled to the output transmission line.

Abstract: A distributed amplifier with improved stabilization includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a common-gate configured transistor coupled to the output transmission circuit, and a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor. The distributed amplifier also includes a non-parasitic resistance and capacitance coupled in series between a drain and a gate of at least one of the common-gate configured transistors for increasing the amplifier stability.

Abstract: A CMOS distributed amplifier with distributed active input balun is disclosed. Each gm cell within the distributed amplifier employs dual-output two-stage topology that improves gain and linearity without adversely affecting bandwidth and power.