Abstract: An amplifier comprises a power source, a load network comprising a load and a resonance circuit, an input branch having a first end electrically coupled to the power source and a second end electrically coupled to the load network, and an active switch having one terminal electrically coupled to the second end of the input branch. The input branch including at least one parallel-LC-circuit configured to provide an infinitely large impedance at harmonics of a determined order.

Abstract: A power amplifier formed by a plurality of pairs of transistors, each pair including a first transistor and a second transistor having each a respective input terminal and a respective output terminal. The output terminals of the first and second transistors of each pair are connected to an output distributed active transformer connected to a differential output of the power amplifier. The input terminals of the first and second transistors of each pair are connected to an input distributed active transformer connected to an input of the power amplifier.

Abstract: The present disclosure relates to a capacitively-coupled distributed amplifier (DA) having an input line and an output line that are coupled to one another through a broadband interface network and DA segments. The input line receives an input signal and the output line provides an output signal based on amplifying the input signal. The broadband interface network includes a group of capacitive elements coupled between the input line and the DA segments to extend a gain-bandwidth product of the DA. The broadband interface network further includes a resistor divider network coupled between the input line and the DA segments to extend a lower end of an operating bandwidth of the DA. As such, the operating bandwidth of the DA may extend from baseband frequencies to microwave frequencies.

Abstract: A semiconductor package (20) includes circuits (22, 24). The circuit (22) includes electrical devices (52, 54) interconnected by a bondwire array (62). Likewise, the circuit (24) includes electrical devices (58, 60) interconnected by a bondwire array (64). Signal wires (76) of the bondwire array (62) are proximate to signal wires (78) of the bondwire array (64). Ground wires (66, 68) are located on either side of, and close to, bondwire array (62). Ground wires (70, 72) are located on either side of, and close to, bondwire array (64). The ground wires (66, 68, 70,72) are electrically coupled to a ground region (74). The ground wires (66, 68, 70, 72) reduce a magnetic flux density (140) via induced return currents (126, 130) on the ground wires of opposite polarity to signal currents (124, 128) on the bondwire arrays (62, 64) to reduce inductive coupling between the adjacent bondwire arrays (62, 64).

Abstract: Reconfigurable distributed active transformers are provided. The exemplary embodiments provided allow changing of the effective number and configuration of the primary and secondary windings, where the distributed active transformer structures can be reconfigured dynamically to control the output power levels, allow operation at multiple frequency bands, maintain a high performance across multiple channels, and sustain desired characteristics across process, temperature and other environmental variations. Integration of the distributed active transformer power amplifiers and a low noise amplifier on a semiconductor substrate can also be provided.

Abstract: An output terminal 6 is provided at the connecting point 5 between the collector terminal of a transistor 1 and an open-ended stub 4 by connecting the open-ended stub 4 to the collector terminal of the transistor 1, the open-ended stub 4 having a line length equal to a quarter of the wavelength of a signal of frequency 2N·F0 or 2N times the oscillation frequency F0. In addition, an output terminal 9 is provided at a connecting point 8 located at a distance equal to a quarter of the wavelength of a signal of oscillation frequency F0 from the end of an open-ended stub 7 by connecting the open-ended stub 7 to the base terminal of the transistor 1, the open-ended stub 7 having a line length longer than a quarter of the wavelength of the signal of oscillation frequency F0.

Abstract: Doherty and distributed amplifier (DA) designs are combined to achieve, wideband amplifiers with high efficiency dynamic range. A modified Doherty amplifier includes a wideband phase shifter providing first and second outputs, a main amplifier coupled to the first output, an auxiliary amplifier coupled to the second output, and a wideband combining network combining the outputs in phase. A multi-stage DA has a main output and a termination port, and a phase delay module and transforming network allowing power at the termination port to be combined in phase with power at the main output. In one combination, one or more stages of the DA may comprise a Doherty amplifier. In another combination, a modified series-type Doherty amplifying system is achieved by cascading main and auxiliary DAs. In any combination, Doherty topology may include a bias control module.

Abstract: Distributed band reject filters are disclosed. A first radio frequency band reject filter is disclosed having a splitter having a first input port, a first output port and a second output port, the splitter being operable on an input signal applied to the first input port to provide a respective output signal proportional to the input signal at each of the first and second output ports, the output signals having a phase shift between 45 degrees and 135 degree with respect to the input signal, as well as first, second and third acoustic resonators coupled respectively to the first input port, the first output port and the second output port.

Abstract: An electronic circuit includes a first transistor having a first terminal grounded, a second transistor having a control terminal coupled with a second terminal of the first transistor, a first terminal grounded via a first capacitor, and a second terminal to which a DC power supply is connected, a first distributed constant line having one end connected to a first node between the second terminal of the first transistor and the control terminal of the second transistor and another end grounded via a second capacitor, a second distributed constant line having one end connected to the second terminal of the first transistor and another end connected to the first node, a third distributed constant line having one end connected to the control terminal of the second transistor and another end connected to the first node, a resistor connected between a second node between the first line and the second capacitor and a third node between the first terminal of the second transistor and the first capacitor, and a path

Abstract: The present invention relates to a tunable filter device for providing a tunable band pass characteristics for the receive path of a multi-band front-end module. According to the invention is proposed, a distributed, wide-band amplifier with a low-frequency cut-off and a high-frequency cut-off in combination with a LCR network, of which wide-band amplifier the DC blocking capacitors define the low-frequency cut-off of the filter device, whilst the high-frequency cut-off is determined by the cut-off frequency of the artificial input and output transmission lines of the LCR network. In one embodiment, additional capacitors are coupled in parallel to the DC blocking capacitors of the LCR network, switchable by MOS transistors as switching elements. Accordingly, in a certain embodiment it is proposed to allow tuning of the low- and the high-frequency cut-off by programming with a digital control command.

Abstract: An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin1 arranged between an AC ground point and one of the input and the output and coupled to the main line Lout. By applying an operating voltage different from the ground voltage level to the AC ground point, the operating voltage is supplied to the output electrodes of the amplification elements via the sub line from the AC ground point. In realizing a high-performance load circuit in an RF amplification device, it is possible to avoid increase of a module height of an RF module.

Abstract: A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.

Abstract: Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages.

Abstract: Provided is a distributed amplification apparatus that outputs an output signal obtained by amplifying an input signal input thereto, comprising an input-side transmission line that transmits the input signal; an output-side transmission line that transmits the output signal; and a plurality of amplifiers that are provided in parallel between the input-side transmission line and the output-side transmission line, the amplifiers each amplifying the input signal transmitted on the input-side transmission line and supplying the amplified signal to the output-side transmission line. Each amplifier includes a transistor; a capacitor provided on a line that transmits the input signal to a gate terminal of the transistor; and a gate-ground resistance that is provided between the gate terminal of the transistor and a ground potential.

Abstract: The invention relates to a broadband microwave device with switchable gain comprising a microwave signal input E and output S, a distributed amplifier with a plurality of amplifying cells comprising an input transmission line for an input signal applied to the microwave signal input E, said input transmission line having one of its two ends linked to the microwave signal input E, an output transmission line for said amplified input signal having an output end of the distributed amplifier, the cells of the distributed amplifier settable either to an amplifying state or to a blocked state. A switch switches the microwave signal output S either to a non-amplification position linked to the other end of the input transmission line, or to an amplification position linked to the output end of the distributed amplifier. A control unit supplies switch position control and amplifying cell status control signals.

Abstract: A distributed active transformer (DAT) based millimeter-wave (MMW) power amplifier circuit is designed for power amplification of MMW frequency signals. The proposed MMW power amplifier circuit is characterized by distributing the input frequency signals into two sets of differential signals and by the use of a distributed active transformer circuit unit to process these two sets of differential signals to thereby generate an amplified frequency signal as the end result of output. The invention provides higher and greater added values and power added efficiency (PAE) and is ideal for use in millimeter-wave communications systems with an operation frequency around 60 GHz.

Abstract: A multi-band low noise amplifier (LNA) includes multiple low noise amplifying circuits configured to selectively operate in corresponding frequency bands. The low noise amplifying circuits include corresponding amplifying units and degenerating units. The degenerating units include first inductors, which are arranged in loop patterns isolated from each other on a same layer, such that one first inductor surrounds at least one other first inductor. A current flows through a selected first inductor included in a selected low noise amplifying circuit of the low noise amplifying circuits.

Abstract: A distributed amplifier system has a predetermined output impedance and input impedance and includes an input transmission circuit; an output transmission circuit; at least two amplifiers connected between the input and output transmission circuits; an input termination on the input transmission circuit; and a feedback output termination on the output transmission circuit connected back to the input transmission circuit for reducing low frequency loss while maintaining the predetermined output impedance and input impedance.

Abstract: Designs and techniques associated with power amplifiers for amplifying RF signals to provide variable power amplification and improved linearity in various RF amplification circuits, including power amplifiers operated under the power back-off conditions.

Abstract: A distributed low noise amplifier (DLNA) comprises at least a first amplifier part 30.1 providing a first path 36.1 form an input of the amplifier to an output of the amplifier and a second amplifier part 30.2 providing a second path 36.2 from the input to the output. Each of the first and second paths being associated with a respective and different change in phase. The difference being larger than degrees in a noise suppression band to cause a phase difference between noise generated by the amplifier arrangement propagating along the first and second paths and destructive interference of the noise before the output of the DLNA, thereby to suppress noise in the noise suppression band. The respective gains of the amplifier parts 30.1 to 30.n may decrease in a direction from the input of the amplifier to the output thereof.

Abstract: An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.

Abstract: A distributed amplifier may include an input transmission line for receiving on an input end an input signal, and an output transmission line for outputting on an output end an output signal. A plurality of amplifier stages may be coupled between intermediate positions on the input and output lines. Feedback impedance may negatively feed back a signal on the output end of the output line to a second end of the input line spaced from the first end of the input line.

Abstract: In order to allow to make compact a distributed amplifier by dispensing with any choke coil and reduce its cost, the distributed amplifier is configured such that it comprises an input side transmission line, an output side transmission line, and plural amplifier circuits connected to the input side transmission line and the output side transmission line, wherein push-pull amplifier circuits are employed as the amplifier circuits.

Abstract: A resistor (9-1) and a resistor (11-1) are connected in parallel with each other between a source of an input transistor (7-1) and the ground. A switch (12-1) is provided between the resistor (11-1) and the source. A variable resistor circuit may be constituted by the resistor (9-1), the resistor (11-1) and the switch (12-1). Further, a capacitor (10-1) and a variable capacitor (13-1) are connected in series with each other between the source and the ground. A control terminal (14-1) to which a voltage is applied when capacitance of the variable capacitor (13-1) is controlled is provided between the capacitor (10-1) and the variable capacitor (13-1). A variable capacitor circuit may be constituted by the capacitor (10-1) and the variable capacitor (13-1). An input capacitance change circuit may be constituted by the variable resistor circuit and the variable capacitor circuit.

Abstract: A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.

Abstract: Reconfigurable distributed active transformers are provided. The exemplary embodiments provided allow changing of the effective number and configuration of the primary and secondary windings, where the distributed active transformer structures can be reconfigured dynamically to control the output power levels, allow operation at multiple frequency bands, maintain a high performance across multiple channels, and sustain desired characteristics across process, temperature and other environmental variations. Integration of the distributed active transformer power amplifiers and a low noise amplifier on a semiconductor substrate can also be provided.

Abstract: A plurality of transistors operate as amplification elements. An input side coupling circuit comprises a plurality of distributed constant lines connected in series, one terminal of which is an input terminal and the other terminal of which is a bias input terminal. Each of the connection nodes between these distributed constant lines is connected to each of the inputs of the transistors. An output side coupling circuit comprises a plurality of distributed constant lines connected in series, one terminal of which is an output terminal and the other terminal of which is a bias input terminal. Each of the connection nodes between these distributed constant lines is connected to each of the outputs of the transistors. A termination circuit is provided at the input side coupling circuit or the output side coupling circuit.

Abstract: An active input matrix balun and a method for the same. The matrix balun has one input transmission line with an RF-in terminal for receiving a single ended RF-in signal and a first output transmission line with a first RF-out terminal and an adjacent second output transmission line with a second RF-out terminal. Two balanced RF-out signals at the first and at the second RF-out terminal, where each RF-out signal has an amplitude level equal to or exceeding the amplitude level of the RF-in signal and where the RF-out signals have a mutual phase difference of 180° and are of equal amplitude levels.

Abstract: An amplifier includes a carrier amplifier which performs signal amplification at all times, a peak amplifier which operates only at a time when the high electric power is outputted, a combiner which combines the output from the carrier amplifier and the peak amplifier, and a distributor which distributes an input signal to the carrier amplifier and the peak amplifier. The carrier amplifier and the peak amplifier are included in a single package transistor.

Abstract: A power amplifier using N-way Doherty structure for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, the present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.

Abstract: A controlled RF active duplexer comprises two distributed amplifiers and means for controlling them. Each distributed amplifier comprises an input line and an output line, the output line of the first distributed amplifier being common to the input line of the second distributed amplifier. An end of the input line of the first distributed amplifier forms the input port, an end of the output line of the second distributed amplifier forms the output port and an end of the line common to the two distributed amplifiers forms the input/output port. The distributed amplifiers are placed in the on state or in the off state in opposition to one another as a function of the ports to be made to communicate. The invention makes it possible to carry out the splitting of the RF signals within a compact space and isolation between input port and output port.

Abstract: The disclosure generally relates to a method and apparatus for providing high-speed, low signal power amplification. In an exemplary embodiment, the disclosure relates to a method for providing a wideband amplification of a signal by forming a first transmission line in parallel with a second transmission line, each of the first transmission line and the second transmission line having a plurality of superconducting transmission elements, each transmission line having a transmission line delay; interposing a plurality of amplification stages between the first transmission line and the second transmission line, each amplification stage having an resonant circuit with a resonant circuit delay; and substantially matching the resonant circuit delay for at least one of the plurality of amplification stages with the transmission line delay of at least one of the superconducting transmission lines.

Abstract: A distributed amplifier system has a predetermined output impedance and input impedance and includes an input transmission circuit; an output transmission circuit; at least two amplifiers connected between the input and output transmission circuits; an input termination on the input transmission circuit; and a feedback output termination on the output transmission circuit connected back to the input transmission circuit for reducing low frequency loss while maintaining the predetermined output impedance and input impedance.

Abstract: A cascade-connected transistor includes a common-source transistor which receives an input signal, and a common-gate transistor which is connected to a drain terminal of the common-source transistor and outputs an output signal. A band-pass filter receives the output signal of the cascade-connected transistors. An adjustment circuit is interposed between the drain terminal and the gate terminal of the common-gate transistor, and adjusts the output impedance of the cascade-connected transistor.

Abstract: A semiconductor package (20) includes circuits (22, 24). The circuit (22) includes electrical devices (52, 54) interconnected by a bondwire array (62). Likewise, the circuit (24) includes electrical devices (58, 60) interconnected by a bondwire array (64). Signal wires (76) of the bondwire array (62) are proximate to signal wires (78) of the bondwire array (64). Ground wires (66, 68) are located on either side of, and close to, bondwire array (62). Ground wires (70, 72) are located on either side of, and close to, bondwire array (64). The ground wires (66, 68, 70,72) are electrically coupled to a ground region (74). The ground wires (66, 68, 70, 72) reduce a magnetic flux density (140) via induced return currents (126, 130) on the ground wires of opposite polarity to signal currents (124, 128) on the bondwire arrays (62, 64) to reduce inductive coupling between the adjacent bondwire arrays (62, 64).

Abstract: A balanced power amplifier that is insensitive to load line variations is provided. The balanced power amplifier is suitable for use in wireless transmitter applications, such as cellular telephones, mobile computing devices, and portable communication devices. An embodiment of such a balanced power amplifier includes an input coupler, first and second amplifier devices, and a level adjustment component. The input coupler generates a first signal component and a second signal component from an input signal, where the first signal component and the second signal component are out of phase relative to one another. The first amplifier device generates a first output signal that is influenced by the first signal component, and the second amplifier device generates a second output signal that is influenced by the second signal component. The level adjustment component is coupled between the input coupler device and the input of the first amplifier device.

Abstract: Provided is a distributed amplifier in communication systems, including: an input transmission line; an output transmission line; an input impedance match and an output impedance match, for providing termination of the input transmission line and the output transmission line, respectively and for preventing signal reflection in the input transmission line and the output transmission line, respectively; multi-stage Gm cells with common mode feedback, the input transmission line being coupled to the output transmission line by the transconductance of the Gm cells; and an input gate bias circuit, for providing bias for the multi-stage Gm cells. In at least one of the Gm cells, one inverter performs V/I conversion while other inverters provide negative resistance to control common mode of output voltage and to enhance DC gain of the Gm cell. Due to common mode feedback, no output gate bias is needed.

Abstract: A distributed amplifier may include an input transmission line for receiving on an input end an input signal, and an output transmission line for outputting on an output end an output signal. A plurality of amplifier stages may be coupled between intermediate positions on the input and output lines. Feedback impedance may negatively feed back a signal on the output end of the output line to a second end of the input line spaced from the first end of the input line.

Abstract: Provided is a distributed amplifier in communication systems, including: an input transmission line; an output transmission line; an input impedance match and an output impedance match, for providing termination of the input transmission line and the output transmission line, respectively and for preventing signal reflection in the input transmission line and the output transmission line, respectively; multi-stage Gm cells with common mode feedback, the input transmission line being coupled to the output transmission line by the transconductance of the Gm cells; and an input gate bias circuit, for providing bias for the multi-stage Gm cells. In at least one of the Gm cells, one inverter performs V/I conversion while other inverters provide negative resistance to control common mode of output voltage and to enhance DC gain of the Gm cell. Due to common mode feedback, no output gate bias is needed.

Abstract: This invention provides a novel electronically tunable active duplexer for wireless transceiver applications. It relates to an active duplexer with full-duplex operation, permitting simultaneous transmission and reception of signals at same or different frequencies. It incorporates varactors, instead of fixed or mechanically adjustable capacitors, in phase shifting networks enabling one to electronically tune, with ease and precision, the frequency at which isolation is desired, over a band in both transmit and receive modes of operations. It can be implemented as a Monolithic Microwave Integrated Circuit (MMIC).

Abstract: A second output transmission signal (“TX2”) added to a line driver is a scaled version of the main output transmission signal (“TX1”). TX2 is scaled from TX1 by a variable scale factor K. An adaptive hybrid circuit subtracts TX1 and TX2 from a line signal carrying both a line transmission signal and a line received signal (“RX”). A programmable impedance Ztune is coupled between the TX2 output of the line driver and the RX output of the adaptive hybrid circuit. A transmission echo in the output RX signal is measured. K and Ztune are then adaptively tuned to minimize the transmission echo. The hybrid in this case becomes a 4-port network, one port specifically added to adaptively cancel the transmission echo in the RX output of the adaptive hybrid circuit. Alternatively, the hybrid may be a 3-port hybrid including variable impedances to cancel the line transmission signal.

Abstract: An amplifier device has an input distributor block to which a radio-frequency input signal to be amplified is fed via an input, and that has a number of distributor elements connected in series. Each distributor element splits the input signal supplied thereto into a divided signal and a remainder signal. The divided signal and the remainder signal are appropriately amplified and re-combined by combiner elements. The distributor elements, the amplifiers and the combiner elements are designed to operate in combination with one another so that the divided signals exhibit identical amplitudes among one another, the amplified signals exhibit identical amplitudes among one another, and the delay from the input to the output is the same for all of the amplifiers.

Abstract: An exemplary amplifier circuit includes a first group of spatially distributed final amplifier stages having a first configuration, and a second group of spatially distributed final amplifier stages having a second configuration different than the first configuration. Both groups share the same control node for their respective final amplifier stages, and both groups share the same amplifier output node. Each group is typically enabled at a time that the other is disabled. In certain embodiments incorporating a memory array, only one critical analog node must be routed throughout the memory array.

Abstract: A down-converter includes two low-noise amplifiers, a 90-degree hybrid coupler, two first matching circuits, and a down-converting circuit. The two low-noise amplifiers respectively amplify a first beacon signal and a second beacon signal to generate a first amplified signal and a second amplified signal. The 90-degree hybrid coupler includes two input ports and two output ports for transforming the first amplified signal and the second amplified signal into a first coupler output signal and a second coupler output signal. The two first matching circuits are respectively coupled to the two input ports or the two output ports of the 90-degree hybrid coupler and each first matching circuit has a first tuning mechanism disposed in one side of the first matching circuit and not contacting the first matching circuit. The down-converting circuit performs a frequency down-conversion on the first coupler output signal and the second coupler output signal.

Abstract: Doherty and distributed amplifier (DA) designs are combined to achieve, wideband amplifiers with high efficiency dynamic range. A modified Doherty amplifier includes a wideband phase shifter providing first and second outputs, a main amplifier coupled to the first output, an auxiliary amplifier coupled to the second output, and a wideband combining network combining the outputs in phase. A multi-stage DA has a main output and a termination port, and a phase delay module and transforming network allowing power at the termination port to be combined in phase with power at the main output. In one combination, one or more stages of the DA may comprise a Doherty amplifier. In another combination, a modified series-type Doherty amplifying system is achieved by cascading main and auxiliary DAs. In any combination, Doherty topology may include a bias control module.

Abstract: A transmission line amplifier utilizes a transmission line transistor having a gate line, and first and second lines. The gate line is a gate of the transistor, one of the first and second lines is a source of the transistor, and the other is a drain of the transistor. The gate line includes an input terminal at a first end thereof, adapted to receive an input signal, and a gate line load terminal at a second end thereof, adapted to be connected to a gate line load. The second line is connected to a first supply voltage. The first line includes a first line load terminal at a first end thereof that is adapted to be connected to a first line load, and an output terminal at a second end thereof that is adapted to provide an output signal.

Abstract: Methods to implement power control in a digital power amplifier are described.

Abstract: When an output electrode of a power transistor in the final amplifying stage is coupled to a transmission line transformer TLT serving as an impedance matching circuit, a condition for impedance matching of the transmission line transformer is maintained. An RF amplifying device comprises a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power to be fed to the antenna from the other end of the main line.

Abstract: A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.

Abstract: A power amplifier comprises a distributed pre-driver, digital signal adjuster, a distributed high power amplifier; and an integrated coupler-detector unit. The distributed pre-driver, the digital signal adjuster, the distributed high power amplifier and the integrated coupler-detector unit are formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of a monolithic microwave integrated circuit device.