Abstract: According to one embodiment of the invention, an amplifier includes a gate bias circuit operable to generate a gate bias voltage and a common gate amplifier that includes a transistor having a gate biased by an output of the gate bias circuit and also having a source connected to an inductor for providing a path to ground for direct current flowing through the transistor. According to another embodiment of the invention, a method for amplifying a signal by an amplifier includes generating a gate bias voltage indicative of a difference between a reference voltage and an output voltage of the amplifier, biasing the gate of the common-gate amplifier with the gate bias voltage, and blocking, by a passive device, alternating current signals from flowing from the source of the transistor to ground.

Abstract: An amplifier bias circuit connectable to an amplifier device, comprising a first sensor device for sensing a first amplifier characteristic and for providing at a first sensor output a bias signal related to the first amplifier characteristic. The circuit further comprises a second sensor device for sensing a second amplifier characteristic and for providing at a second sensor output a bias signal related to the second amplifier characteristic. The first sensor output and second sensor output are each connected to an amplifier connect connectable to a bias input of said amplifier device.

Abstract: A micro-electronic power amplifier that defines a uniform thermal impedance includes an output stage including a single transistor array including a plurality of emitter leads and a single thermal coupling device that thermally couples together each of the emitter leads.

Abstract: To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.

Abstract: A high-frequency power amplifier with a temperature compensation function for power amplifying a high-frequency signal, includes: a power amplifying transistor having an emitter grounded; a high power output bias circuit that supplies a high power output current corresponding to a high power output of the high-frequency power amplifier to the power amplifying transistor; and a low power output bias circuit that supplies a low power output current corresponding to a low power output of the high-frequency power amplifier to the power amplifying transistor.

Abstract: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

Abstract: A Doherty microwave amplifier having a main amplifier and a peaking amplifier, distributing and inputting an input signal to the main amplifier and the peaking amplifier to obtain an output signal by combining an output from the main amplifier and an output from the peaking amplifier, comprises a first coupler which branches and outputs a part of the input signal, a second coupler which branches and outputs a part of the output signal, and a bias control unit which feedback-controls a bias signal to the peaking amplifier, based on a difference between a level of a signal branched and output from the first coupler and a level of a signal branched and output from the second coupler.

Abstract: A system for generating a supply voltage, temperature and process compensated gain control voltage from a digital data word. In particular, the compensated gain voltage control voltage maintains a linear relationship between a change in gain in response to an input gain control voltage for a gain circuit of a transmitter circuit. A monitor circuit senses at least one of the supply voltage, temperature and process parameters, and generates a first set of digital signals corresponding to the sensed parameter. A digital compensator circuit converts the input gain control voltage into a second set of digital signals, and decodes the combined first and second set of digital signals to provide a data word. The data word is converted into an analog voltage representing the compensated gain voltage control voltage. The digital compensator circuit includes a table of compensation values, each accessible by a distinct combination of the first and second set of digital signals.

Abstract: A temperature compensation circuit 145 included in a collector voltage generation section 130a applies an offset voltage Vofs(T) to a power control signal Vctrl according to a device temperature. The resulting temperature compensation circuit output voltage Vctrl? (T) is applied to a collector terminal of a bipolar transistor 110 through a voltage regulator 140 and a choke inductor 170.

Abstract: The antenna amplifier for mobile FM radio reception includes a signal amplifier, a controllable adjusting element having a PIN diode for impedance adaptation, and a control amplifier for regulating the adjusting element. The antenna amplifier has a compensation for the temperature response occurring as a result of very great differences (summer/winter) in ambient temperature, the PIN diode connection point is optimized, and the control range is maximized.

Abstract: A high frequency amplifier circuit has a bias supplying transistor for supplying a bias current to an amplifying transistor, and first and second temperature compensating transistors for compensating the temperature properties of the base voltage of the bias supplying transistor. The base of the bias supplying transistor and the base of the first temperature compensating transistor are connected by a resistor in order to keep the base voltage of the bias supplying transistor approximately constant without following a change in the base voltage of the first temperature compensating transistor, even in the case where such a change occurs. The temperature compensating transistors, the bias supplying transistor and the resistor are formed in one multi-emitter type transistor.

Abstract: An amplifier includes a differential amplifier (10) having an input stage (20) for amplifying a differential input signal (Vin), and an output stage (6) coupled to the input stage (20) for producing and output signal (Vout). The input stage (20) includes main input circuitry (20A) for amplifying small-signal values of the input signal (Vin) and alternative input circuitry (20B) for amplifying the input signal (Vin) during conditions which cause thermal imbalance in the main input circuitry (20B). The input stage (20) includes switching circuitry (12) for coupling the input signal (Vin) to the main input circuitry (20A) during normal small-signal operating conditions and to the alternative input circuitry (20A) during large-signal operating conditions that cause thermal imbalance in the main input circuitry (20B).

Abstract: A method of amplifying an input signal comprises providing a semiconductor die, forming an LNA input stage having a transconductance, on the semiconductor die, and desensitizing the LNA input stage transconductance to variations in process and environmental conditions.

Abstract: A bias circuit which applies a bias voltage to a control terminal of a first active element for an RF signal amplification, includes a threshold voltage change compensation circuit and a first temperature compensation circuit. The threshold voltage change compensation circuit contains a second active element and compensates the bias voltage based on a change in threshold voltage of the first active element by using the second active element. The first temperature compensation circuit is connected between the control terminal and the voltage change compensation circuit and configured to compensate a change in the bias voltage based on a temperature change.

Abstract: A bias circuit includes a regulator circuit and a current diverting circuit. The regulator circuit includes a load resistor, a first transistor, and feedback control circuitry for biasing the first transistor such that a nominal quiescent current flows through the first resistor and first transistor. A current diverting circuit is coupled in parallel with the first transistor. When the current diverting circuit is disabled, the nominal quiescent current continues to flow through the load resistor and first transistor. When the current diverting circuit is enabled, a diverted current flows through the current diverting circuit, such that the new quiescent current through the first transistor is equal to the nominal quiescent current minus the diverted current. The value of the diverted current is also controlled by the feedback control circuitry. The quiescent current through the first transistor is used as a reference for biasing another circuit.

Abstract: An apparatus comprises a first substrate and a second substrate. The first substrate includes an optoelectronic device and a matching circuit. The second substrate includes a driver circuit. A frequency response of the optoelectronic device is changed by the matching circuits. The first substrate is coupled to the second substrate via respective bond pads from the first and second substrates such that the matching circuit is interposed between the optoelectronic device and the driver circuit.

Abstract: An amplifier bias system. The amplifier bias system includes a battery voltage supply coupled with an amplifier transistor to be biased; an output node coupled with a gate of the amplifier transistor; and a current source coupled with the battery voltage supply, wherein the current source provides a current to a node in response to the battery voltage supply. The amplifier bias system further includes a first transistor coupled between the battery voltage supply and the output node, the first transistor having a gate coupled with the first node; a second transistor coupled with the first node, the second transistor having a gate coupled with the output node; and a current load coupled with the output node.

Abstract: A circuit structure capable of adjusting gradient of output to temperature variation includes at least a sensing unit for detecting ambient temperature variation and generating a sensing signal, an amplifying unit connected to the sensing unit for increasing a level of the sensing signal, and an adjusting unit connected to the amplifying unit for increasing or decreasing an amplification ratio of the amplifying unit, so as to change a gradient of an output of the amplifying unit to temperature variation.

Abstract: Methods and systems for processing signals are disclosed herein. In one aspect of the invention a circuit for processing signals may comprise a triple well (TW) NMOS transistor coupled to an amplifier core. The TW NMOS transistor may track process and temperature variations (PVT) of at least one NMOS transistor within the amplifier core. A drain of the TW NMOS transistor may be coupled to a first inductor and the first inductor may be coupled to a first voltage source. The first voltage source may generate a standard voltage of about 1.2V. A source of the TW NMOS transistor may be coupled to a second inductor and the second inductor may be coupled to the first voltage source. A gate of the TW NMOS transistor may be coupled to a second voltage source, where the second voltage source may generate a standard voltage of about 2.5V.

Abstract: Provided is a temperature-compensated bias circuit for a power amplifier, in which a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q3) and an emitter terminal of the third transistor is connected to a first diode (D1).

Abstract: A power amplification controlling apparatus and method in a mobile communication system are provided. An amplifying part amplifies an input Radio Frequency (RF) signal with a power supply voltage. A bias adaptation part detects at least one of environmental changes of the amplifying part, attenuates the RF signal according to the detected environmental change, detecting the envelope of the attenuated signal, and generates a supply voltage control signal according to the envelope. A power supply part changes the power supply voltage in response to the supply voltage control signal.

Abstract: A circuit for providing a base operating voltage for a bipolar transistor includes a UBE multiplier providing, in response to a working-point control current, a working voltage fed to a circuit for reducing the working voltage in order to generate a base operating voltage smaller than a base-emitter voltage drop of a bipolar power transistor. With this, the bipolar power transistor may be maintained in the class C operation in a flexible and robust manner, so that an amplifier with high efficiency is obtained.

Abstract: A gain control device of a transmitter in a mobile communication terminal is provided. The device includes a temperature sensor for sensing an external temperature, a power amplifying module for amplifying a radio frequency output, a gain control circuit for controlling a voltage gain of the power amplifying module, a fixed gain circuit for providing a fixed voltage gain to the power amplifying module, a switch for switching to connect the power amplifying module to one of the gain control circuit and the fixed gain circuit, and a controller for generating a control signal to control the switch depending on the sensed external temperature.

Abstract: A dummy circuit is provided to which a bias circuit of a low noise amplifier (LNA) can be coupled to during power down of the LNA. The dummy circuit maintains the bias circuit at an approximately normal operating state to reduce wake up time of the LNA.

Abstract: A diode detecting circuit which cancels temperature dependence of a detecting diode so as to obtain highly sensitive detection. The diode detecting circuit has a first diode detecting unit in which a first diode detects an input signal biased by a bias voltage, a second diode detecting unit in which a second diode receives the bias voltage, and an output unit which compares an output from the first diode detecting unit with an output from the second diode detecting unit.

Abstract: The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitor 21 is connected at one end to an upstream stage bias circuit 107 via a bonding wire B1, and grounded at the other end. Also, a chip inductor 22 is connected to a base electrode of a high-frequency signal amplification HBT 101 via a bonding wire B2. In the high-frequency power amplifier of the present invention, the chip capacitor 21 causes noise generated within the upstream stage bias circuit 107 to flow to the ground, thereby reducing noise in the reception band. Also, the chip inductor 22 reduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.

Abstract: RF polar modulation circuit has a self-compensated temperature stable envelope controller and self-compensated temperature stable power amplifier bias. The circuit has an adaptive current-to-voltage modulation interface with pre-distortion compensation capability. AM/PM distortion are compensated for envelope dependent power amplifier transistor biasing. Automatic compensation is provided for RF loads that are higher or lower than nominal loads. This Abstract is provided to comply with rules requiring an Abstract that allows a searcher or other reader to quickly ascertain subject matter of the technical disclosure. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

Abstract: A general purpose Darlington pair amplifier circuit, configured in accordance with a preferred embodiment of the invention, utilizes GaAs heterojunction bipolar transistor technology. The amplifier circuit incorporates a temperature compensation circuit at the input stage that controls the total current drawn by the transistors such that the total current is stable over temperature. The temperature compensation circuit includes a feedback resistance element and a bias resistance element that form a voltage divider that establishes the base voltage (bias voltage) of an input transistor. The feedback resistance element and the bias resistance element are of different types, having different positive temperature coefficients. In the example embodiment, the temperature coefficient of the feedback resistance element is greater than the temperature coefficient of the bias resistance element.

Abstract: The invention relates to improvements to the operation of a broadcast data receiver (BDR) and, in particular, to the provision of a video data amplifier and driver circuit for the processing of a received video data signal. The circuit includes a means for generating at least one compensatory value and preferably a multiplication factor. The compensatory value is added to the received video data signal as it passes through the circuit to form a combined signal. The combined signal can also be multiplied. The level of the compensatory value can alter with reference to changes in the environment of the operation of the circuit so as to take into account and minimise changes affecting the operation of the circuit and on the video signal.

Abstract: A differential circuit and an amplifier circuit for reducing an amplitude difference deviation, performing a full-range drive, and consuming less power are disclosed. The circuit includes a first pair of p-type transistors and a second pair of n-type transistors. A first current source and a first switch are connected in parallel between the sources of the first pair of transistors, which are tied together, and a power supply VDD. A second current source and a second switch are connected in parallel between the sources of the second pair of transistors, which are tied together, and a power supply VSS. The circuit further includes connection changeover means that performs the changeover of first and second pairs between a differential pair that receives differential input voltages and a current mirror pair that is the load of the differential pair. When one of the two pairs is the differential pair, the other is the current mirror pair.

Abstract: A transmission apparatus of a mobile communication terminal is implemented so that a modem, a gain controller and a power controlling circuit have one loop construction. In the transmission apparatus, an AGC signal of a modem is precisely adjusted according to an internal temperature of the terminal, and the adjusted AGC signal is applied to gain control in real time, so that a consumption amount of battery due to a loss of a current can be remarkably reduced.

Abstract: An amplifier circuit including a first transistor and a biasing circuit. The biasing circuit includes a process compensation circuit. The biasing circuit being coupled to a gate of the first transistor. A method for biasing an amplifier circuit is also included.

Abstract: In an RF communication system, aspects of constant or proportional to absolute temperature biasing for minimizing transmitter output power variation may comprise configuring at least one current source to provide a temperature dependent current, where the current may be constant with temperature or vary proportionally to absolute temperature. A control voltage that may be generated by an operational amplifier may be fed back to control the current source. An input reference voltage may also be generated for the operational amplifier by utilizing PN junction characteristics of at least one bipolar junction transistor. Resistance may be adjusted to allow operation of the current source at a plurality of different supply voltages, including the different supply voltages that may be less than 1.2 volts, for example. Additionally, adjusting the resistance may also allow the current to be constant with temperature or vary with temperature.

Abstract: A power amplifier for use in a mobile handset includes an amplifying transistor, a bias circuit including a bias transistor, the bias circuit providing a bias current to bias the amplifying transistor, and a bias current control circuit, responsive to fluctuation in a reference voltage and variation in temperature, for adjusting the bias current to control an operation current of the amplifying transistor.

Abstract: A radio frequency (RF) driver amplifier system and method that provides linear in decibel gain control is provided. The RF driver amplifier system comprises a linear transconductor receiving an input voltage and providing a controlled current based on input voltage received, temperature compensation circuitry for varying current from the linear transconductor according to absolute temperature, an exponential current controller receiving current varied according to temperature and providing an exponential current in response, and an inductive degeneration compensator receiving exponential current and providing a control current to driver amplifier circuitry, thereby compensating for inductive degeneration due to at least one inductor in the driver amplifier circuitry. Control current passes from the inductive degeneration compensator to the driver amplifier circuitry. Output gain from the driver amplifier circuitry varies linearly in decibels with respect to the input voltage.

Abstract: A circuit for amplifying an input voltage (VIN) into an output voltage (VOUT) with an overall gain factor, which is a product of a first gain factor (S) and a second gain factor (R1), comprises means for generating an intermediate signal (I2) from the input voltage (VIN) and the first gain factor (S) and means for generating the output voltage (VOUT) from the intermediate signal (I2) and the second gain factor (R1). The first gain factor (S) and the second gain factor (R1) have opposite temperature dependencies.

Abstract: The invention relates to a temperature compensating circuit for an amplifier. The circuit comprises a voltage regulator, a component arrangement and a resistor coupling of at least two resistor units. At least part of the output voltage of the temperature compensating circuit is adjustable. The component arrangement includes at least one component with a known temperature dependency of voltage. The resistor coupling forms a slope coefficient as a ratio of values of the resistors in the resistor coupling. The resistor coupling is coupled to the a component arrangement in order to provide the temperature compensating circuit with an output voltage having a temperature dependency which is a function of the slope coefficient and the known temperature dependency of the component arrangement.

Abstract: A radio transmitter includes a power control table, a power amplifier, and a power controller. The power control table includes a plurality of control values. The power amplifier amplifies an RF signal for transmission with an adjustable gain. The power controller adjusts the gain of the power amplifier based on the power control table and a temperature signal that is indicative of a temperature of at least a portion of the radio transmitter.

Abstract: A system and method for providing digital compensation and correction for an amplifier. The system is configured to provide a digitally compensated representation of a first amplified analog signal indicative of a first parameter based on a digital representation of the first amplified analog signal and a digital representation of a second analog signal indicative of a second parameter. The digitally compensated representation of the first amplified analog signal is determined by applying a pre-stored compensation factor to an offset adjustment calculation for the second parameter to provide a compensated offset adjustment. The compensated offset adjustment is combined with an adjusted gain to provide an offset and gain correction for weighting the first parameter to provide the digitally compensated representation of the first parameter. The adjusted gain can be determined by applying a pre-stored gain factor data to the second parameter.

Abstract: An RF amplifier is disclosed having a first and second current mirror module. The first and second current mirror modules each provide current to affect the quiescent bias current of the RF amplifier.

Abstract: A power amplifier able to minimize the deterioration of the linearity with respect to fluctuations in ambient temperature, wherein a first terminal of a first resistance element and a first terminal of a second resistance with a temperature coefficient smaller than that of the first resistance element are connected, the connection point is connected to a gate terminal of an FET, a second terminal of the first resistance element is connected to a bias voltage supply terminal, a second terminal of the second resistance element is connected to the ground potential, a drain terminal of the FET is connected to a power source voltage supply terminal, a source terminal is connected to the ground potential, and the FET and the first resistance element are constituted by semiconductor devices formed on the same semiconductor substrate.

Abstract: An image sensing apparatus of this invention includes a signal generator adapted to generate a signal upon reception of input light, a transfer unit adapted to transfer the signal generated by the signal generator, a temperature measuring unit adapted to measure a temperature, an amplification unit adapted to amplify the signal transferred from the transfer unit, and a control unit adapted to control the gain of the amplification unit at a first temperature to be lower that the gain of the amplification unit at a second temperature measuring unit, the second temperature being lower than the first temperature.

Abstract: In a circuit according to the present invention, a multi-collector transistor is provided which includes first to third collectors so that, when a current does not flow from the second collector, a current from the first collector increases but a current from the third collector does not vary. When transistors of the circuit turn off because the voltage of an input signal gets out of an in-phase input voltage range, the supply of the current from the second collector comes to a stop and, hence, the current from the first collector increases. In this situation, further transistors carry out their on/off operations, thereby fixing the output of the circuit to a low level. That is, this circuit can, irrespective of poor pair compatibility between the transistors, fix the output logical level to a desired level when the voltage of an input signal gets out of an in-phase input voltage range.

Abstract: The invention relates to a temperature compensating circuit for an amplifier. The circuit comprises a voltage regulator, a component arrangement and a resistor coupling of at least two resistor units. At least part of the output voltage of the temperature compensating circuit is adjustable. The component arrangement includes at least one component with a known temperature dependency of voltage. The resistor coupling forms a slope coefficient as a ratio of values of the resistors in the resistor coupling. The resistor coupling is coupled to the a component arrangement in order to provide the temperature compensating circuit with an output voltage having a temperature dependency which is a function of the slope coefficient and the known temperature dependency of the component arrangement.

Abstract: Disclosed is an RF transmitter circuit (10), as well as a method for operating the circuit. The RF transmitter circuit includes a VGA (20), that includes circuitry for generating a feedback signal, and a temperature compensation block (18) having an input coupled to a gain control signal and an output coupled to an input of the VGA for providing to the VGA a compensated gain control signal. The temperature compensation block further includes a bias input that receives the VGA feedback signal. The VGA feedback signal operates to modify the gain control signal to reduce an amount of variability in a VGA gain slope over a range of VGA output power.

Abstract: A self-tuned millimeter wave transceiver module includes a microwave monolithic integrated circuit (MMIC) having at least one amplifier. A controller is operatively connected to the MMIC for sensing amplifier operating conditions and tuning the at least one amplifier to an optimum operating condition. The controller includes a surface mounted microcontroller chip operatively connected to the MMIC.

Abstract: A bias current supply circuit according to an embodiment of the invention includes a first transistor and a second transistor which form two emitter followers cooperating to supply a base bias current of a bipolar transistor for signal amplification, a normal temperature characteristic circuit which has normal temperature characteristics increasing an amount of current supply with increasing temperature and supplies a base current to the first bipolar transistor, and a reverse temperature characteristic circuit which has reverse temperature characteristics decreasing the amount of current supply with increasing temperature and supplies a base current to the second bipolar transistor.

Abstract: The present invention provides temperature compensation for a power amplifier by varying a supply voltage applied to the power amplifier. The supply voltage is varied based on operating temperature in light of the temperature characteristics of the power amplifier. Thus, the variation in the supply voltage offsets variations in the characteristics of the power amplifier due to changes in temperature. Whether the power amplifier is used to control the output power of a transmitter or as part of a polar modulation system, temperature compensation of the power amplifier allows the power amplifier to provide an accurate and repeatable output signal having essentially no fluctuations due to changes in temperature.

Abstract: Circuits and methods for a low voltage pre-distortion circuits that provide a temperature and logarithmically compensated voltage such that a gain change of a variable gain amplifier is linear in dB and has a reduced temperature dependency. A temperature compensation circuit multiplies the transfer function of gain of the amplifier versus gain control voltage by absolute temperature. A logarithmic compensation circuit removes the non-logarithmic factor of a “1” in the denominator of the transfer function.

Abstract: A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit.