Abstract: A high frequency switch configured particularly with FET switches. One end of second FET switch is connected between I/O port and reception port and the other end is ground. A parallel unit of strip line and capacitor is connected between second FET switch and I/O port. This parallel unit has the electrical length equivalent to ¼ wavelength of the high frequency signal input from transmission port.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: An RF modulator/switch selectably couples a locally generated and conducted RF signal or an antenna RF signal to a broadcast radio receiver. A local RF input receives the conducted RF signal. An antenna RF input receives the antenna RF signal in response to a radiated RF broadcast in a broadcast band. A resonant network has a first node coupled to the antenna RF input and has a resonant frequency corresponding to the broadcast band. A first relay has a first output selectably coupled to either the antenna RF input or a second node of the resonant network. A second relay has a second output selectably coupled to either the local RF input or the first output of the first relay. When the second relay selects the local RF input then the first relay selects the second node of the resonant network and when the second relay selects the first output of the first relay then the first relay selects the antenna RF input.

Abstract: A balanced line switching apparatus that provides high isolation at an expense of a marginal increase of loss. Practical implementation can give as much as 40 dB isolation in a single stage.

Abstract: A switching system includes a first transistor having a first gate and coupled between a first terminal and a second terminal and a second transistor having a second gate and coupled between the second terminal and a third terminal. The first transistor and the second transistor are configured to conduct a signal current between the first terminal and the third terminal. An impedance component coupled to the first gate and the second gate is configured to isolate a first gate signal voltage at the first gate or isolate a second gate signal voltage at the second gate to reduce a distortion of the signal current.

Abstract: A high-frequency switch includes a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal; a first diode, the cathode thereof being electrically connected to the transmission terminal, and the anode being electrically connected to the antenna terminal; a first transmission line, electrically connected between the antenna terminal and the reception terminal; a second diode, the cathode thereof being electrically connected to the reception terminal, and the anode being electrically connected to the voltage-control terminal; a second transmission line, one end thereof being electrically connected to the transmission terminal, and the other end being connected to ground; and a capacitor, electrically connected between the voltage-control terminal and ground. The above high-frequency switch can be miniaturized and has superior performance.

Abstract: A broadband multiple input, multiple output switch matrix. The switch matrix comprises multiple crosspoint switch element tiles. Each tile comprises RF MEMS switches disposed on a substrate to provide a crosspoint switching capability. The crosspoint switch element tiles are disposed in a flip-chip manner on the upper side of an RF substrate that provides RF connectivity between the various crosspoint switch element tiles. A bias line substrate disposed on the lower side of the RF substrate receives control signals for the crosspoint switch element tiles and routes the signals through the RF substrate using vias in the RF substrate.

Abstract: The invention aims to provide a high-frequency device enable to protect circuits connected to an antenna terminal from possible intruding static electricity or high voltage noises. Diplexer 11 connected to antenna terminal 10 carries out demultiplexing or multiplexing frequency for GSM or DCS band. Circuits to process frequency for GSM and DCS band have switches 13 and 14 respectively for switching to transmit or to receive signals for diplexer 11. Switch 13 and 14 are connected to low pass filters 15 and 16 respectively to clear off higher harmonics in transmitting signals, and are connected to SAW filters 17 and 18 having respective specific pass bands. Filters 15, 16, 17 and 18 are connected to terminals 19, 20, 21 and 22 respectively. Moreover, a first end of varistor 23 is connected between antenna terminal 10 and diplexer 11 and a second end of varistor 23 is connected to ground terminal 24.

Abstract: A high frequency switch circuit device includes an FET to be a switching element on a semiconductor substrate. The FET includes an n-type well, a gate electrode, a source layer and a drain layer. An n-type well line to be connected to an n-type well layer to be a back gate is connected to a voltage supply node via an inductor. The flow of a high frequency signal between the voltage supply node and the n-type well layer is blocked by the inductor, and the flow of a high frequency signal in the vertical direction is blocked by a depletion layer extending between the n-type well and a p-type substrate region. Moreover, the flow of a high frequency signal in the horizontal direction is blocked by a trench separation insulative layer.

Abstract: A linear voltage controlled capacitance circuit is provided that includes a plurality of MOS varactor pairs. Each MOS varactor pair is operable to receive a first tuning voltage, a second tuning voltage, and a bias voltage unique to the MOS varactor pair. The capacitance circuit is operable to generate a positive tank node signal and a negative tank node signal based on the first and second tuning voltages and the bias voltages. A means to control voltage-to-capacitance gain is also provided to compensate for coarse tuning capacitance change.

Abstract: A high frequency switch, has a transmitting terminal; a receiving terminal; an antenna terminal; a first diode having an anode electrically connected to the transmitting terminal and a cathode electrically connected to the antenna terminal; a second diode having an anode connected through a transmission line of ¼ wavelength to the antenna terminal which is electrically connected to the receiving terminal, and having the side of a cathode grounded; and a control terminal provided to a node between the transmitting terminal and the first anode, wherein the first and second diodes have a tradeoff relationship between ON resistance thereof and capacitance between the anode and the cathode, and the ON resistance of the first diode is lower than the ON resistance of the second diode, and the capacitance of the second diode in the OFF state is smaller than the capacitance of the first diode in the OFF state.

Abstract: Switchable path length coupler/dividers. Coupler/divider operation over multiple frequency bands is provided by using switchable path lengths. In one implementation, a Wilkinson-style device with switches to select different path lengths and therefore operating frequencies. In a rat-race style device, switches select races of different lengths, and therefore operating frequencies.

Abstract: A high speed switching apparatus comprises first and second parallel balanced lines each directed from an input line end to an output line end and adapted to receive equal and opposite currents to provide balanced operation. Third and fourth parallel balanced lines are spaced apart one from the other and each directed from an input line end to an output line end and adapted to receive equal and opposite currents to provide balanced operation. A first switch is coupled between the output end of the first line and the input end of the third line, and operative in a first high impedance off state and a second low impedance on state. A second switch is coupled between the output end of the second line and the input end of the fourth line, and operative in a first high impedance off state and a second low impedance on state.

Abstract: A high-frequency switch having two input terminals and two output terminals of which a broad pass band is required has (i) a circuit board that has two input electrodes along one side and two output electrodes along another side, and (ii) four PIN diodes mounted on this circuit board. Each side of the quadrangle made by connecting the input electrodes and the output electrodes is not parallel to the corresponding side of the quadrangle made by connecting electrodes for mounting the PIN diodes. Each side and the corresponding side form an angle other than 180°. This structure can provide a high-frequency switch capable of reducing a transmission loss in the paths and facilitating impedance matching.

Abstract: A system for impedance matched switching of an input signal from an input source includes a first means, such as an FET, for controllably switching the input signal from an input terminal connected to the input source to an output terminal, the switching being controlled according to a control voltage. The system further includes a second means, such as an FET, for controllably switching a matching impedance between the input terminal and ground according to the control voltage. When the input signal is prevented from passing from the input terminal to the output terminal by the first means for controllably switching, the input signal passes through the matching impedance, which has an impedance characteristic substantially matched to an impedance characteristic of the input source.

Abstract: A transmission lines arrangement comprising a first plurality of transmission lines each transmission line having an effective characteristic impedance. The arrangement further comprises a second plurality of transmission lines, said first plurality of transmission lines being coupled to a plurality of switching elements. The plurality of switching elements are conceived to redirect an input signal from one transmission line of the first plurality of transmission lines to at least one transmission line of the second plurality of transmission lines. The arrangement is characterized in that each of the switching elements of the plurality of switching elements have a relatively high input impedance in comparison with the effective characteristic impedance and a relatively high output impedance in comparison with the effective characteristic impedance.

Abstract: A switch circuit includes a first electronic switch coupled between two terminals, and a second electronic switch and a capacitor coupled in series between a reference voltage and a control input of the first electronic switch. A different switch circuit includes first and second electronic switches coupled in series between two terminals with a further terminal coupled to a node between the switches, a third electronic switch and a first capacitor coupled in series between a reference voltage and a control input of the first electronic switch, and a fourth electronic switch and a second capacitor coupled in series between a reference voltage and a control input of the second electronic switch.

Abstract: A single-pole double-throw switch comprises an input line portion and two output line portions connected to the input line portion at a branch point and defining with the input line portion two propagation channels for electromagnetic signals reaching the branch point via the input line portion. Each output line portion includes a two-state electronic component constituting either a substantially open circuit or a substantially short circuit as a function of the application of an appropriate command and being in one of these two states in the absence of a command. The two identical electronic components are each disposed in series in or in parallel with one of the two output line portions.

Abstract: A semiconductor device includes a switching element, for example, a Schottky barrier diode, which controls transmission/cutoff of a signal transmitted between two portions of a transmission line. An anode electrode of the switching element is interposed between the two portions of the transmission line and the longitudinal direction of the anode electrode is aligned with the longitudinal direction of the transmission line. A cathode electrode of the switching element is disposed on at least one of the widthwise sides of the anode electrode, and is connected to ground.

Abstract: An economical, compact wireless data telemetry transceiver is adapted to establish and maintain communication links at 2.4 GHZ. The wireless transceiver includes RF and computer control components in a compact package approximately the size of a deck of cards and is adapted to be built into original equipment manufacturer (OEM) products to support a wide range of wireless data telemetry applications. Each transceiver includes a shielded RF board or module with a frequency hopping transmitter and receiver, an antenna, and a digital control board or module. The transceiver functions as a half duplex, bi-directional communication device; transmit and receive functions are time interleaved in a non-overlapping fashion. The RF Board consists of a transmitter, receiver, frequency synthesizer and T/R Switch, each controlled by an external microprocessor to either transmit serial data or receive serial data.

Abstract: In a switching scheme mechanical MEMs switches are connected in parallel with solid state switches. This parallel MEMS/solid-state switch arrangement takes advantage of the fast switching speeds of the solid state switches as well advantage of the improved insertion loss and isolation characteristics of the MEMS switches. The solid-state switches only need to be energized during a ramp up/down period associated with the slower MEMs switch thus conserving power. As an additional advantage, using a solid-state switch in parallel with MEMs switches improves the transient spectrum of the system during switching operations.

Abstract: A high frequency switching component for being connected to a transmission circuit, a reception circuit, and an antenna to be used for switching to either a state in which the transmission circuit is connected to the antenna, or a state in which the reception circuit is connected to the antenna, comprising: a multilayer circuit board, on which there is formed a circuit including: a transmission circuit terminal to be connected to the transmission circuit; a reception circuit terminal to be connected to the reception circuit; an antenna terminal to be connected to be the antenna; a ground terminal; a first diode whose anode is connected to the transmission circuit terminal and the cathode thereof is connected to the antenna terminal; a second diode whose anode is connected to the reception circuit terminal and the cathode thereof is connected to the ground terminal; a signal line for connecting the transmission circuit terminal, the reception circuit terminal, and the antenna terminal via the first diode; and

Abstract: A dual channel, RF switch with broadband frequency response is provided wherein an RF signal input to a transformer is provided to a first and second biasing circuit. Each biasing circuit includes one or more DC blocking capacitors and a biasing PIN diode. Thus the biasing circuit provides an RF output to an output port. A biasing circuit control signal selectively controls each biasing circuit. When a biasing circuit is biased, it presents a very low resistance to the output load, while in an unbiased condition; the biasing circuit provides a very high resistance or impedance to the output load. The PIN diode provides for a biasing element through which the RF signal does not flow.

Abstract: An SPDT switch used for a communication unit includes first and second terminals, a common terminal, and first and second FETs with Schottky connection gates. The drain of the first FET is connected to the first terminal, and the source of the second FET is connected to the second terminal. The source of the first FET and the drain of the second FET are directly connected to each other, and are then connected to the common terminal. The pinch-off voltage Vp1 of the first FET is set to satisfy 0 >Vp1>&agr;−&ggr;, and the pinch-off voltage Vp2 of the second FET is set to satisfy 0 >Vp2>&ggr;−&bgr;, where &agr;<&ggr;<&bgr;. A fixed potential &ggr; is applied to the gate of the second FET, and one of potentials &agr; and &bgr; is applied to the gate of the first FET, so that one of the first and second terminals can be electrically connected to the common terminal. Additional resonance and/or switching elements may be included as well.

Abstract: A scalable N×M switching matrix architecture is characterized by a readily calculable number of crossover locations and comprises one or more single pole, N throw (“SPNT”) switches and, for each such switch, an N state impedance converter/amplitude compensation network.

Abstract: A highly efficient power amplifier is composed of (1) two microwave divide/through switches, (2) two power amplifiers, connected with the two microwave divide/through switches, to amplify the signal power transmitted from the first microwave divide/through switch, and (3) a half-wavelength transformer, connected to an output terminal of one of the power amplifiers, to delay the phase of the amplified signal by a half-wavelength.

Abstract: A 1-by-N switch matrix (10) includes at least two ranks of switches (12-1, 12-2-1, 12-2-2, 12-3-1, . . . , 12-3-4, 12-4-1, . . . , 12-4-8, and 12-5-1, . . . , 12-5-16; 112-1, 112-2-1, 112-2-2, 112-3-1, . . . , 112-3-4, 112-4-1, . . . , 112-4-8, and 112-5-1, . . . , 112-5-8). Each switch has first, second and third terminals (1, 2, 3). A first state of each switch couples the first terminal (1) to the second terminal (2) and a second state of each switch couples the first terminal (1) to the third terminal (3). The second (2) and third (3) terminals of each switch (12-1, 12-2-1, 12-2-2, 12-3-1, . . . 1., 2-3-4; 112-1, 112-2-1, 112-3-3 and 112-3-4) of each rank (-1-, -2-, -3-) above the next to lowest rank (-4- or -3-) are coupled to first terminals (1) of respective switches (12-4-1, . . . , 12-4-8 and 112-3-1, 112-3-2, 112-4-5, 112-4-8) in the next lower rank (-2-, -3-, -4-). The second (2) and third (3) terminals of each switch (12-4-1, 12-4-8 and 112-3-1, 112-3-2, 112-4-5,. . .

Abstract: The present invention is directed to an improved system and method for transmitting and receiving digital data. In order to counter the spatial filtering effects of a digital data bus, data is spatially filtered by a driver before being sent on the digital data bus to its destination. In the alternative, the data may be spatially filtered by a receiver after being sent on the digital data bus. The spatial filter may include one or more current-limiting elements, such as a resistor or a transistor, coupled between the power supply and the various buffers on the bus. Such a configuration results in a lowering of the crosstalk and ground bounce present between adjacent lines on a data bus.

Abstract: An RF A/B switch associated with a receiver has first and second inputs and an output. A first diode circuit includes a plurality of diodes and an impedance network coupled between the first input and the output. A second diode circuit includes a plurality of diodes and an impedance network coupled between the second input and the output. A controller establishes a common series biasing current through at least one of the diodes in each of the first and second diode circuits. The common series biasing current biases one of the first and second diode circuits so as to configure a respective one of the impedance networks in a low pass filter configuration that couples a signal on one of the first and second inputs to the output, and the common series biasing current biases the other of the first and second diode circuits in a blocking configuration so as to block a signal on the other of the first and second inputs from the output.

Abstract: A device for switching radio frequency signals that includes at least a first MOS transistor for selectively interrupting or transmitting the signals between at least first and second terminals as a function of a control signal. The gate of the first MOS transistor is connected to the first terminal, and both the drain and source of the first MOS transistor are connected to the second terminal. In a preferred embodiment, the first MOS transistor selectively interrupts or transmits the signals between the first terminal and the second terminal, and the device also includes a second MOS transistor for selectively interrupting or transmitting the signals between the first terminal and a third terminal. A system for processing radio frequency signals is also provided.

Abstract: A high-frequency module prevents distortion in first and second diodes of a high-frequency switch in a communication system which is not selected without providing a negative power source, and a communication apparatus includes such a high-frequency module. The high-frequency module includes a diplexer having inductors and capacitors, and high-frequency switches including first and second diodes, transmission lines, inductors, and capacitors.

Abstract: Radiation synthesizer systems provide efficient wideband operation with an antenna, such as a loop, which is small relative to operating wavelength. Energy dissipation is substantially reduced by cycling energy back and forth between a high-Q radiator and a storage capacitance under control of a switching circuit. In addition to transmit operation using an energy source such as a battery, by reciprocity receive systems deliver received signals to an output device, such as a speaker or other audio or visual transducer device. By efficient direct processing, via controlled activation of switch devices of switch modules, incident RF signals are converted to baseband signals. Commercial type AM receivers may be provided without IF processing and detection or analog filters.

Abstract: The invention relates to a switch member having one inlet and at least two outlets for transferring a signal applied to the inlet to a single one of the outlets, the switch member comprising: for each outlet, an outlet branch having at least one electronic switch whose conduction state is controlled either to transfer the signal from the inlet to the selected outlet, or else to reflect the signal; and a shunt branch having at least one electronic switch which shunts the inlet signal to a load in the event of a loss of power to the electronic switches of the member. The electronic switch of the shunt branch is connected in series and the electronic switch of each outlet branch is connected in parallel.

Abstract: An RF power combiner. A plurality of RF inputs connect to a power combiner switch assembly. RF switches connect each input to a common node. A single stub matching circuit connects between the common node and an output node such that an open-ended transmission line stub extends from the output node. An RF output connector feeds an RF output connection from the output node. The stub of the L-match circuit has fixed length or variable length configurations. As a consequence, the impedances at the common and output nodes are more closely matched.

Abstract: A high frequency switch, has a transmitting terminal; a receiving terminal; an antenna terminal; a first diode having an anode electrically connected to the transmitting terminal and a cathode electrically connected to the antenna terminal; a second diode having an anode connected through a transmission line of ¼ wavelength to the antenna terminal which is electrically connected to the receiving terminal, and having the side of a cathode grounded; and a control terminal provided to a node between the transmitting terminal and the first anode, wherein the first and second diodes have a tradeoff relationship between ON resistance thereof and capacitance between the anode and the cathode, and the ON resistance of the first diode is lower than the ON resistance of the second diode, and the capacitance of the second diode in the OFF state is smaller than the capacitance of the first diode in the OFF state.

Abstract: Switching apparatus and method in an array having plural inputs and plural outputs crossing each other at a plurality of crosspoints. First and second tandem switches are disposed at each crosspoint, between a respective input and a respective output. A shunt capacitor is coupled to each first and second switch and to ground, to short crosstalk in the inputs and outputs. A method of making a semiconductor switch array is also provided.

Abstract: An RF A/B switch associated with a receiver has first and second inputs and an output. A first diode circuit includes a plurality of diodes and an impedance network coupled between the first input and the output. A second diode circuit includes a plurality of diodes and an impedance network coupled between the second input and the output. A controller establishes a common series biasing current through at least one of the diodes in each of the first and second diode circuits. The common series biasing current biases one of the first and second diode circuits so as to configure a respective one of the impedance networks in a low pass filter configuration that couples a signal on one of the first and second inputs to the output, and the common series biasing current biases the other of the first and second diode circuits in a blocking configuration so as to block a signal on the other of the first and second inputs from the output.

Abstract: A transmit/receive module including digitally controlled analog circuits is described. The digital circuits use a logic family adapted for use with analog monolithic integrated circuits. The disclosure also describes a preferred process to provide digital and analog microwave circuits on a common semiconductor substrate.

Abstract: The cost of an antenna duplexer is reduced by decreasing the number of parts for antenna switching, and the size thereof is reduced by reducing the space of a printed-circuit board on which a receiving circuit and a transmission circuit are formed. The antenna duplexer includes an antenna, a transmission circuit, a receiving circuit, a first transmission line for connecting the transmission circuit to the antenna, and a second transmission line for connecting the receiving circuit to the antenna, wherein the length of the first transmission line is set to be approximately a quarter of the wavelength of the transmission frequency, and the length of the second transmission line is set to be approximately a quarter of the wavelength of the receiving frequency.

Abstract: A transmission lines arrangement comprising a first plurality of transmission lines each transmission line having an effective characteristic impedance. The arrangement further comprises a second plurality of transmission lines, said first plurality of transmission lines being coupled to a plurality of switching elements. The plurality of switching elements are conceived to redirect an input signal from one transmission line of the first plurality of transmission lines to at least one transmission line of the second plurality of transmission lines. The arrangement is characterized in that each of the switching elements of the plurality of switching elements have a relatively high input impedance in comparison with the effective characteristic impedance and a relatively high output impedance in comparison with the effective characteristic impedance.

Abstract: In a high frequency switch, first and second diodes are respectively connected between first and second ports and between first and third ports so that they are directed in the same direction with respect to the first port. Coupling capacitors are connected on both sides of the respective diodes. Distributed constant lines and capacitors are connected between points of connection between the respective diodes and the corresponding capacitors, and reference potentials. Control voltage terminals are connected to points of connection between the distributed constant lines and the capacitors. A distributed constant line and a capacitor are connected between the first port and a reference potential. A fixed voltage terminal is connected through a resistor to a point of connection between the distributed constant line and the capacitor.

Abstract: Microwave circuit arrangement containing one or more semiconductor switching elements, which are characterized in that at least one semiconductor switching element is controlled or switched by alteration of the drain and source potentials, and for use of these circuits in mobile telephones or mobile radio transceivers.

Abstract: A phase compensated switched attenuation device 6 is provided for attenuating high frequency signals while maintaining an insertion loss of less than 1 dB up to 3 GHz. A single GaAs FET 12 is coupled between input port 8 and output port 9 in parallel with a 20 dB pad 10 for switching the device 6 between a through state and an attenuation state. First and second isolation FETs 14 and 16 are coupled between the GaAs FET 12 and pad terminals 18 and 19 to isolate the GaAs FET 12, decrease return loss when the GaAs FET 12 is on, and increase isolation of the GaAs FET 12 from the pad 10 when the GaAs FET 12 is on. A resistor 24 or a series combination of a resistor 24 and capacitor 26 can be coupled to the pad terminals 18 and 19 in parallel with the pad 10 to improve return loss when the GaAs FET 12 is on. Resistors 21, 22, and 23 are also provided to reduce distortion, coupling gates of the FETs 12, 14, and 16 to a plurality of voltage references V1 and V2.

Abstract: An SPST switch having a small transmission loss and a small power consumption is provided. The drain and the source of an FET are connected to each other in series through an induction element and a capacitor element, one terminal of the capacitor element is connected to a first terminal, the other terminal is connected to a second terminal, the gate of the FET is connected to a control terminal, the capacitance of the capacitor element is made equal to the OFF capacitance of the FET, and the inductance of the induction element is set to be such a value that the induction element resonates at a signal frequency with the capacitor element.

Abstract: A method and apparatus are disclosed for isolating a selected switching connection, within a switch matrix. The switching connection is isolated by forming two shunt stubs, or equivalent lumped circuits, each having an electrical length such that the input impedance of the shunt stub is high. The shunt stubs are formed on the appropriate input and output signal lines of the switch matrix on the side distant from the side of the input and output lines preferred for the propagation of the signal. The switch matrix may be constructed within and on a glass substrate.

Abstract: The present invention aims to realize, in regard to a high frequency switch used for a mobile communication apparatus such as a portable telephone or the like, a dual band switch having simple structure and changeable to ON and OFF states in two bands. For realizing the aim, the present invention provide a dual band switch comprising a series circuit of a PIN diode (101) and its compensation circuit (102), and, the compensation circuit (102) is formed with a circuit having at least two series resonance points and one parallel resonance point. The above structure allows the impedance of the compensation circuit, which is capacitive in low frequency close to a direct current, to be inductive after undergoing the first series resonance point, whereby the parasitic capacity of the diode is canceled in the first band, and also to be inductive again after undergoing the parallel resonance point and the following series resonance point, whereby the parasitic capacity of the PIN diode is canceled in the second band.

Abstract: The invention relates to a switch matrix having n inlets and p outlets, p being greater n. The matrix includes a plurality of switch members each having one inlet and at least two outlets and each enabling a signal applied to the inlet of said member to be transferred to one of the outlets. Each inlet of the matrix being for connection to one out of r outlets. The switch members are of the electronic type and are mounted in such as manner that when switching is performed consisting in modifying a connection from an inlet of the matrix to an outlet thereof, so that said same inlet is connected to another outlet of the matrix, the losses due to the switch members passed through remain substantially the same value. The invention applies to a matrix enabling a faulty electronic element connected to an outlet of the matrix to be replaced by another element connected to another outlet of the matrix.

Abstract: A power amplifier including: a first amplifier PA2 having an input terminal and an output terminal; a passive circuit PC3 having an input terminal and an output terminal; and a first switch SW2 having a single-pole terminal and two multi-throw terminals, one of the multi-throw terminals of the first switch SW2 being connected to the input terminal of the first amplifier PA2 and the other of the multi-throw terminals of the first switch SW2 being connected to the input terminal of the passive circuit PC3. This makes it possible to provide a power amplifier and a communication unit which can be operated with different frequencies, output powers or modulation types.

Abstract: The present invention teaches a power amplifier having two or more output power devices and a combining network for switching the output path between these several power devices. The first output power device is designed for power efficient signal amplification at the power amplifier's highest output power level. The second output power device is designed for power efficient signal amplification at the output power level that the power amplifier is most likely to operate. Either the first or second output power device is enabled depending on the output power level. A combining network is used to transform the output impedance, as required, for the proper operation of the enabled power device. By switching between a range of power devices according to the output power level, a high level of power efficiency can be achieved across a broad range of operating states of the power amplifier.

Abstract: A high-frequency switch having a greatly reduced occurrence of high harmonic signals includes first and second switches, and each of these two switches includes two diodes and two transmission lines. Besides, one of the two voltage control terminals is connected, via a resistor, to the intermediate connection point between the anode of one of the two diodes of the first switch and one of the two transmission lines of the first switch. The other of the voltage control terminals is connected, via another resistor, to the intermediate connection point between the anode of one of the two diodes of the second switch and one of the two transmission lines of the second switch.