Abstract: The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

Abstract: High power, high frequency switches include a transmission line having at least three portions that are serially coupled between an input port and an output port to define at least two nodes and to carry a high power, high frequency signal between the input port and the output port. First and second power transistors are provided. At least a third power transistor also is provided. The controlling electrode(s) (gate) of the first, second and/or third power transistor(s) are responsive to a switch control input. The controlled electrodes (source/drain) of a respective one of the first and second power transistors, and of a respective one of the third power transistor(s) are serially coupled between a respective one of the at least two nodes and a reference voltage. The power transistors may be silicon carbide MESFETs.

Abstract: A method to improve characteristics of PIN diode switches, attenuators, and limiters via the control of nodal signal voltages by local impedance control.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: The invention relates to a circuit comprising an antenna input (1), a signal input (2) and a signal output (3), and a switching unit (4), wherein the antenna input (1) is connected to a first protection device (6) against electrostatic discharges, said first protection device (6) being a band-pass filter in a ?-configuration. The advantage of the first protection device (6) is that it eliminates the need for a band-pass filter in the front end module, when used in a mobile telephone. Furthermore, the band-pass filter has a very good filtering characteristic, enabling ESD-related disturbances to be effectively suppressed. The invention also relates to a switching module and to the use of the same.

Abstract: In one embodiment, a wafer scale antenna array is provided that includes: a substrate, a first plurality of antennas adjacent to the substrate; and a driving network adjacent the substrate for transmitting RF signals to the plurality of antennas and for receiving RF signals from the plurality of antennas, the driving network coupling to a distributed plurality of driving amplifiers and corresponding matching amplifiers integrated with the substrate.

Abstract: A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).

Abstract: A branch path having a transmission line and a distributed constant line includes a resonant circuit. The resonant circuit resonates at a predetermined operating frequency when the branch path is in OFF state. At this time, the distributed constant line has a predetermined impedance. Further, an impedance of a node between the resonant circuit and distributed constant line can be set on a circle of a reflection coefficient 1 near short on the Smith chart.

Abstract: Two lines Ai1 (i=1 or 2) are connected to an input terminal In. The line Ai1 is grounded via a capacitor Ci1. The line Ai1 and a line Bi1 form a coupled line. One end of the line Bi1 is connected to a positive pole of a diode Di1 which is grounded at its negative pole. Lines Bi0 and Bi2 are connected to the other end of the line Bi1. The other end of the line Bi0 is connected to a capacitor Ci0 which is grounded at its other end and a resistor Ri0 which is connected to a voltage control terminal VCTLi at its other end. The other end of the line Bi2 is connected to the positive pole of a diode Di2. The line Bi2 and the line Ai2 form a coupled line. One end of the line Ai2 is connected to an output terminal Out-i, and the other end is grounded via a capacitor Ci2. The output of the terminals Out-1, 2 are switched to 5.8 GHz band, 4.8 GHz band and cut-off, by applying to VCTL1 and VCTL2 three potentials, that is, ground potential.

Abstract: The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

Abstract: A transceiver front end circuit includes an antenna terminal capable of being coupled to an antenna. A first balun circuit has a single input that is coupled to the antenna terminal, and a pair of balanced outputs coupled to a corresponding pair of balanced receiver inputs. The first balun circuit matches an input impedance of the pair of balanced receiver inputs and substantially phase shifts the input reflection coefficient of the pair of balanced receiver inputs by about 180-degrees. A second balun circuit has a single output coupled to the antenna terminal and a pair of balanced inputs coupled to a corresponding pair of balanced transmitter outputs. The second balun circuit matches an output impedance of the pair of balanced transmitter outputs and substantially phase shifts the output reflection coefficient of the pair of balanced transmitter outputs by about 180-degrees. The first balun circuit and the second balun circuit can be contained within a single package.

Abstract: A high frequency switch circuit device includes: at least one distributed element of at least one transmission line; at least two lumped elements of at least one resistor and at least one capacitor; at least one semiconductor device; at least one input terminal; at least two output terminals; and another transmission line, having an open end or a short-circuited end, connected to the input terminal. A total length of the input terminal and said another transmission line is set to be about an integer times ?/2 in case the transmission line has the open end and about an integer times (?/4+?/2) in case the transmission line has the short-circuited end. One of the output terminals is used as an input port to which a signal is inputted, and another one of the output terminals is used as an output port from which a signal is outputted.

Abstract: An electronic signal processing apparatus has a signal switch with a first and a second transistor of normally-on type, having main current channels coupled between an internal node and a switch input and output, respectively. A diode provides a switchable signal coupling between the internal node and ground. A switch control circuit has a control output that is DC coupled to the main current channel of the first and the second transistor via the internal node to control conduction of the main current channels. The diode is also DC-coupled to the internal node so that a DC potential of a terminal of the diode that controls whether the diode is on or off is determined by a potential of the internal node. The diode is preferably incorporated in the DC current path from the control output to the internal node, so that the diode is forward-biased when a control voltage that makes the main current channels non-conductive is applied.

Abstract: An unbalanced-balanced multiband filter module comprising three high-frequency switches each comprising a switching element, and two unbalanced-balanced bandpass filters having different transmitting frequency bands, a first high-frequency switch being connected to an unbalanced port of the module, an unbalanced port of the first unbalanced-balanced bandpass filter, and an unbalanced port of the second unbalanced-balanced bandpass filter; a second high-frequency switch being connected to a first balanced port of the module, a first balanced port of the first unbalanced-balanced bandpass filter, and a first balanced port of the second unbalanced-balanced bandpass filter; a third high-frequency switch being connected to a second balanced port of the module, a second balanced port of the first unbalanced-balanced bandpass filter, and a second balanced port of the second unbalanced-balanced bandpass filter; and the first to third high-frequency switches being switched depending on a passing high-frequency signal,

Abstract: The present invention provides a high frequency module having a base substrate unit (2) which has its uppermost layer planarized to form a buildup-forming surface (16), a high frequency circuit unit (3) having multiple wiring layers which are formed on the base substrate unit (2), each of which layers has a wiring pattern and film elements formed on a dielectric insulating layer thereof, whose uppermost wiring layer (17) has plural lands (22) and ground patterns (20) formed thereon together with the wiring pattern and inductor elements (19), and a semiconductor chip (4) mounted on the wiring layer (17) of the high frequency circuit unit (3). Transmission lines (24) to connect the inductor elements (19) and lands (22) which are formed on the wiring layer (17) are directed within hollowed pattern regions (20c) formed at the ground pattern (20) to constitute coplanar type transmission lines.

Abstract: An integrated RF front-end module for use in a communications device, such as a mobile phone. The RF front-end module is made from a laminated structure consisting of a plurality of layers. At least one of the layers is used to embed RF electronics. Microvias are disposed in various layers of the laminated structure so as to provide electrical connections to the embedded RF electronics. Two electrically conductive layers are provided on both sides of the laminated structure for shielding the RF components against electromagnetic interference. An antenna has one or two radiating elements disposed on one or both sides of the laminated structures for conveying RF signals to and from the RF electronics. The antenna can be fine-tuned and the operational frequency range of the antenna can also be changed.

Abstract: A filter circuit is provided wherein one end of an inductor is connected to one end of a capacitor to form a signal input end. The other end of the inductor is connected to a first switch circuit, and the other end of the capacitor is connected to a second switch circuit. When a lower-frequency signal in a 2.4 GHz band is to be inputted, a low-pass filter circuit is formed by connecting the other end of the inductor to a signal output end and the other end of the capacitor to ground, and when a higher-frequency signal in a 5 GHz band is to be inputted, a high-pass filter circuit is formed by connecting the other end of the inductor to ground and the other end of the capacitor to the signal output end, by manipulating the first and second switch circuits.

Abstract: The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

Abstract: An exemplary antenna switching circuit comprises first, second, third and fourth switches. The first switch is activated by a first control signal for establishing a connection between a first transmit port and an antenna; the second switch is activated by a second control signal for establishing a connection between a second transmit port and the antenna; the third switch is activated by a third control signal for establishing a connection between a first receive port and the antenna; and the fourth switch is activated by the third control signal for establishing a connection between a second receive port and the antenna. With this arrangement, the first receive port and the second receive port are simultaneously connected to the antenna when the third switch and the fourth switch are activated by the third control signal.

Abstract: A high frequency switching component for being connected to a transmission circuit, a reception circuit, and an antenna to be used for switching to either a state in which the transmission circuit is connected to the antenna, or a state in which the reception circuit is connected to the antenna, comprising: a multilayer circuit board, on which there is formed a circuit including: a transmission circuit terminal to be connected to the transmission circuit; a reception circuit terminal to be connected to the reception circuit; an antenna terminal to be connected to be the antenna; a ground terminal; a first diode whose anode is connected to the transmission circuit terminal and the cathode thereof is connected to the antenna terminal; a second diode whose anode is connected to the reception circuit terminal and the cathode thereof is connected to the ground terminal; a signal line for connecting the transmission circuit terminal, the reception circuit terminal, and the antenna terminal via the first diode; and

Abstract: A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode; a first distributed constant line; a second diode; a capacitor; a third diode; a second distributed constant line; and a fourth diode.

Abstract: To provide a high frequency switch capable of dealing with multiple frequency bands without having plurality of switch circuits. A first diode that conducts due to a bias current when a first switch is closed is interposed between first signal terminal and a second signal terminal. A strip line with the electrical length L1 is connected to the cathode of the first diode, the other end being grounded. At a position with a distance L2 from one end of the strip line, a capacitor and a second switch are connected to be equivalently grounded when the second switch is closed. The strip line resonates with the electrical length L1 when the second switch is opened, and resonates with the electrical length L2 when the second switch is closed.

Abstract: Microwave switch (MS) comprising an antenna branch (AB), a receive branch (RB), and a transmit branch (TB). According to one embodiment, the switch comprises a protection circuit (CPL, DTC, CTRL), which upon a high power signal (Dtc_h) being present on the antenna branch effectuates a biasing of semiconductors on both the receive branch (RB) and the transmit branch (TB). According to one embodiment PIN diodes are provided for controlling switching between the transmit and the receiv branch as well as enabling a protective mode, the control being accomplished by selectively biasing respective diodes.

Abstract: A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and an antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode, a second diode, and a distributed constant line, wherein a third diode is connected to the first and second diodes through the distributed constant line.

Abstract: The vertical placement of the series and shunt PIN diodes of a microline series-shunt PIN diode switch results in an increased upper frequency limit of the switch.

Abstract: A radio frequency (RF) switch which is used in an RF unit of a communication apparatus and which has less of an insertion loss during a transmission. A strip line disposed in the RF switch is formed by combining first and second strip lines having different values of characteristic impedance from each other.

Abstract: A phase shifter includes an FET 2a having its drain electrode connected to an input/output terminal 1a; and FET 2b having its drain electrode connected to the source electrode of the FET 2a and its source electrode connected to an input/output terminal 1b; and FET 2c having its drain electrode connected to the source electrode of the FET 2a; and an inductor 3a having its first terminal connected to the source electrode of the FET 2c and its second terminal connected to a ground. It can reduce the insertion loss by narrowing the gate width of the FET 2a, and carries out the phase shift of a high-frequency signal with suppressing the reflection.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: This invention relates to a switching circuit for use at the antenna of a multi-band cellular handset to select between the TX and RX modes of the bands. A number of high isolation switching circuits for selectively connecting a common antenna port to a TX port 2 or an RX port 3 of a multi-band cellular handset are described.

Abstract: A single-pole double-throw switch comprises an input line portion and two output line portions connected to the input line portion at a branch point and defining with the input line portion two propagation channels for electromagnetic signals reaching the branch point via the input line portion. Each output line portion includes a two-state electronic component constituting either a substantially open circuit or a substantially short circuit as a function of the application of an appropriate command and being in one of these two states in the absence of a command. The two identical electronic components are each disposed in series in or in parallel with one of the two output line portions.

Abstract: A crossbar switch comprises a number of crossing points at which controllable switch elements are arranged, via which an input signal supplied to a row can be interconnected to a column intersecting this row at this crossing point when an interconnection signal is supplied to the respective setting parameter via a control input. The controllable switch elements comprise amplifier elements whose amplifier inputs are connected with the rows and whose amplifier outputs are connected with the columns. The amplifier elements are wired such that they only consume electrical energy when the interconnection signal is supplied to the respective crossing point.

Abstract: Equivalent circuits and a simulation method for simulating an RF switch are disclosed. The equivalent circuits are a first equivalent circuit and a second equivalent circuit, and are formed by resistors, capacitors, and inductors. The method includes using the first equivalent circuit to simulate the switch at a turned-off state and using the second equivalent circuit to simulate the switch at a turned-on state.

Abstract: A high frequency switch is provided with an input terminal, an output terminal, a first diode, a second diode, a first resistor, a third diode and a second resistor. The first diode is provided in a signal line, which connects the input terminal to the output terminal. The first diode has an input end and an output end. The second diode has one end, which is connected to the input end side of the first diode. The first resistor is provided in a terminated line, which is connected to another end of the second diode. The third diode has one end, which is connected to the output end side of the first diode. The second resistor is provided in a terminated line, which is connected to another end of the third diode.

Abstract: A system and method for filtering signals in a communications system reduces hardware and chip size requirements by selectively connecting a filter along transmitter and receiver paths of a transceiver. In operation, a controller generated signals for connecting the filter along the transmitter path when the transceiver is in transmitter mode and for connecting the filter along the receiver path when the transmitter is in receiver mode. The controller then generates additional signals for setting one or more parameters of the filter based on the path connected, or put differently based on the operational mode of the transceiver. In a variation, the controller sets the parameters of additional elements coupled to the filter as a way of further controlling processing of the transmitter and receiver signals.

Abstract: A high-frequency switch circuit common to a plurality or frequency bands comprises a first high-frequency switch connected to first high-frequency signal input and output terminals and adapted to pass transmission signals of a first or a second frequency band and block received signals of the first and second frequency band; and a demultiplexer has a first high-frequency circuit which consists of a first phaser connected to the first terminal and a first bandpss filter succeeding to the first phaser, and a second high-frequency circuit which consists of a second phaser connected to the first terminal and a second bandpass filter succeeding to the second phaser.

Abstract: A high-frequency switch having two input terminals and two output terminals of which a broad pass band is required has (i) a circuit board that has two input electrodes along one side and two output electrodes along another side, and (ii) four PIN diodes mounted on this circuit board. Each side of the quadrangle made by connecting the input electrodes and the output electrodes is not parallel to the corresponding side of the quadrangle made by connecting electrodes for mounting the PIN diodes. Each side and the corresponding side form an angle other than 180°. This structure can provide a high-frequency switch capable of reducing a transmission loss in the paths and facilitating impedance matching.

Abstract: A high frequency switch includes a main line electrode arranged on a substrate so as to extend between two terminals, a short stub line electrode on the substrate of which one end is connected to a one-side edge of the main line electrode, and the other end is grounded, an open stub line electrode on the substrate of which one end is connected to the other-side edge of the main line which is opposed to the one-side edge, and the other terminal is opened, ground electrodes arranged on the substrate adjacent to the short stub line electrode and the open stub line electrode in the width direction thereof, a semiconductor activation layer disposed in a portion of the substrate between the side edge at least on the one-end side of the open stub line electrode and the ground electrode so as to extend under the open stub line electrode and under the ground electrode, and a gate electrode disposed on the semiconductor activation layer between the open stub line electrode and the ground electrode so as to extend along

Abstract: An antenna switch including a transmit connection for inputting a radio frequency signal, an antenna connection for connection to an antenna for transmitting the radio frequency signal, and a signal path between transmit connection and the antenna connection including at least one transmit transistor controllable to connect selectively the transmit connection to the antenna connection so as to transfer the radio frequency signal from the transmit connection to the antenna connection wherein the transmit transistor is arranged so as to provide a stage of amplification to the radio frequency signal.

Abstract: A high-frequency switch module comprising one band-separating circuit and two switch circuits, the first switch circuit being connected to one circuit separated by the band-separating circuit, and the second switch circuit being connected to the other circuit thereof; the first switch circuit being a circuit for switching a transmission system and a reception system for a first transmitting and receiving system; and the second switch circuit being a circuit for switching a transmission system and a reception system for a second transmitting and receiving system and a transmission system and a reception system for a third transmitting and receiving system.

Abstract: A first diode is connected in series to a transmission port, and a low pass filter having transmission band and reception band as passing band is disposed between the first diode and an antenna port. A second diode is connected between the reception port and the ground. A phase shifting function is provided between the first diode and a reception port, having reception band as passing band, so that the impedance as seen from the first diode to the reception port side is almost open in the transmission band when a current flows in the second diode.

Abstract: The present invention provides a transceiver apparatus that permits miniaturization even when the antenna thereof is an unbalanced circuit and the transmitter circuit section and receiver circuit section thereof are balanced circuits. The transceiver apparatus is constituted comprising: a semiconductor integrated circuit device that mounts on the same semiconductor chip a balanced receiver circuit 41 for receiving a received signal as a differential input and balanced transmitter circuit 52 for outputting a transmitted signal as a differential output, and that has at least two terminals 71,72 connected to connecting nodes that connect the balanced receiver circuit 41 and the balanced transmitter circuit 52; first and second capacitors C2,C3 connected to the terminals 71, 72 respectively; an external inductor L1 connected to the first and second capacitors C2, C3; a band pass filter 2 and an antenna 1 coupled to the first capacitor C2; and a third capacitor C1 connected to the second capacitor C3.

Abstract: A diplexer capable of passing signals of a high frequency band without being attenuated over a wide frequency band, and a high-frequency switch using the diplexer are provided. The diplexer includes a low-pass filter 82 having a parallel resonant circuit formed by a first capacitor C1 and a first inductor L1 and a serial resonant circuit formed by a second capacitor C2 and a second inductor L2. With this structure, two attenuation poles are provided in the low-pass filter 82. Thus, a passband of a high-pass filter 83 can be widened.

Abstract: To realize high pressure-tightness and improvement in a high-frequency characteristic due to a low impedance between a shunt FET and a ground of a FET switch circuit. An antenna switch module comprising a switch circuit for switching between transmitting and receiving of a signal between an antenna and a transmitting portion and/or a receiving portion and having a shunt circuit, wherein a capacitor of the shunt circuit of the switch circuit is provided to a dielectric layered body, and remaining elements of the switch circuit are provided to semiconductor chips mounted on the dielectric layered body.

Abstract: According to one embodiment of the invention, a compact wireless modem card placement in compliance with thickness requirement of type II PCMCIA standard and type II Compact Flash form factor standard is provided which includes a first side and a second side. The first side has a height clearance of approximately 2 mm. The second side, which is opposite the first side, has a height clearance of approximately 1.45 mm. In one embodiment, those components with a height greater than 1.4 mm are placed on the first side of the card. The first side of the card includes a radio-frequency transmitter (RFT) chip located at the lower left of the first side. The RFT chip performs signal processing functions to up-convert baseband signals received from a mobile station modem (MSM) chip to radio-frequency signals. The first side also includes a radio-frequency (RF) surface acoustic wave (SAW) filter located above and to the left of the RFT chip.

Abstract: A shared-antenna device having a transmission circuit electrically connected between a transmission terminal and an antenna terminal, and a reception circuit electrically connected between a reception terminal and the antenna terminal. The transmission circuit is a variable-frequency band-stop filter circuit and the reception circuit is a variable-frequency bandpass filter circuit. Control-voltage supplying resistors are connected to the PIN diodes such that the DC voltages for individually controlling the PIN diodes are applied to the PIN diodes via only the resistors.

Abstract: In a switching scheme mechanical MEMs switches are connected in parallel with solid state switches. This parallel MEMS/solid-state switch arrangement takes advantage of the fast switching speeds of the solid state switches as well advantage of the improved insertion loss and isolation characteristics of the MEMS switches. The solid-state switches only need to be energized during a ramp up/down period associated with the slower MEMs switch thus conserving power. As an additional advantage, using a solid-state switch in parallel with MEMs switches improves the transient spectrum of the system during switching operations.

Abstract: A PIN diode switching system is provided, particularly for the transmission stage of a mobile radio telephone, in which, when the PIN diode switching system is in a reverse-bias state, a PIN diode is isolated from its power supply via a high-impedance switch and is, thus, biased by its self-rectification to a radio-frequency voltage in order to suppress harmonic formation and radio-frequency attenuation.

Abstract: A frequency switch is configured with two FET switches. One end of a second FET switch is connected between an I/O port and a reception port and the other end is ground. A strip line is connected between the second FET switch and the I/O port, and has an electrical length equivalent to ¼ wavelength of a high frequency signal input from transmission port.

Abstract: A dual channel, RF switch with broadband frequency response is provided wherein an RF signal input to a transformer is provided to a first and second biasing circuit. Each biasing circuit includes one or more DC blocking capacitors and a biasing PIN diode. Thus the biasing circuit provides an RF output to an output port. A biasing circuit control signal selectively controls each biasing circuit. When a biasing circuit is biased, it presents a very low resistance to the output load, while in an unbiased condition; the biasing circuit provides a very high resistance or impedance to the output load. The PIN diode provides for a biasing element through which the RF signal does not flow.

Abstract: Many current electronic systems incorporate expensive or sensitive electrical components. Because electrical energy is often generated or transmitted at high voltages, the power supplies to these electronic systems must be carefully designed. Power supply design must ensure that the electrical system being supplied with power is not exposed to excessive voltages or currents. In order to isolate power supplies from electrical equipment, many methods have been employed. These methods typically involve control systems or signal transfer methods. However, these methods are not always suitable because of their drawbacks. The present invention relates to transmitting information across an interface. More specifically, the present invention provides an apparatus for transmitting both AC and DC information across a high bandwidth magnetic interface with low distortion.