Abstract: A frequency-variable filter includes a filter unit and matching circuits. The filter unit includes frequency-variable resonance circuits that include piezoelectric resonators. The matching circuits have a circuit configuration in which a real number component of an impedance increases as the frequency increases. For example, the matching circuits have an L-type circuit configuration that includes a reactance element connected in shunt to the side of the filter unit and that includes an inductor and a capacitor. As the filter unit includes the piezoelectric resonators, the real number component of the impedance increases as the pass band shifts to a high-frequency side, but the real number component of the impedance increases as the frequency increases in the matching circuits as well. Thus, the impedance matching is achieved.

Abstract: A high-frequency filter coupled between an input-output terminal and another input-output terminal includes series arm resonators, parallel arm resonators, and an inductor defining an LC resonant circuit. Frequencies at a first attenuation pole defined by resonant frequencies or anti-resonant frequencies of the series arm resonators and the parallel arm resonators and a frequency at a second attenuation pole defined by a resonant frequency of the LC resonant circuit are included in one stop band of the high-frequency filter, and the frequencies at the first attenuation pole are located closer than the frequency at the second attenuation pole to a pass band of the high-frequency filter.

Abstract: A ladder filter in which the pass band is defined by serial arm resonators and first and second parallel arm resonators includes the serial arm resonators, the first and second parallel arm resonators, and a third parallel arm resonator. The third parallel arm resonator is connected in parallel to the first parallel arm resonator, the electrostatic capacitance of the third parallel arm resonator is smaller than that of the first parallel arm resonator, and the anti-resonant frequency of the third parallel arm resonator is positioned outside the pass band of the ladder filter. The anti-resonant frequency of the first parallel arm resonator is positioned at the high frequency side of the anti-resonant frequencies of the second parallel arm resonators.

Abstract: Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonators, each shunt acoustic resonator connected between a ground and one of the input, the output, and a junction between two of the plurality of series acoustic resonators. A first shunt resonator of the plurality of shunt resonators has a motional resonance frequency higher than and adjacent to an upper edge of a passband of the bandpass filter.

Abstract: A duplexer includes: a first filter connected between a common terminal and a first terminal and including first series and first parallel resonators; a second filter having a passband higher than that of the first filter, connected between the common terminal and a second terminal, and including second series and second parallel resonators; a first chip including the first series and second parallel resonators mounted thereon; a second chip including the first parallel and second series resonators mounted thereon, wherein when GA and HGB represent temperature coefficients of antiresonant frequencies of the first and second series resonators, and HGA and GB represent temperature coefficients of resonant frequencies of the first and second parallel resonators, a magnitude relationship among GA, GB, HGA, and HGB is none of a relationship in which GA (GB) differs from HGA (HGB), and GB (GA) and HGB (HGA) are located between GA (GB) and HGA (HGB).

Abstract: Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

Abstract: An acoustic wave filter device includes a base having an acoustic wave filter part and a bonding part disposed thereon, the bonding part surrounding the acoustic wave filter part, and a cap having a bonding counterpart disposed thereon, the bonding counterpart being bonded to the bonding part of the base, and the bonding part includes a first bonding layer including gold, and the bonding counterpart includes a second bonding layer bonded to the first bonding layer and including tin.

Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.

Abstract: An acoustic wave device includes: a piezoelectric substrate that is made of a single crystal piezoelectric material, and includes a first region including an upper surface, and a second region that is located under the first region and has a density less than a density of the first region; and an IDT located on the upper surface of the piezoelectric substrate.

Abstract: A multiplexer includes filters, a common terminal with which an inductance element is connected to a connection path of the common terminal and an antenna element and a capacitance element is connected in series to the connection path, and another inductance element. An input terminal of one of the filters is connected to the common terminal via the another inductance element, and is connected to a parallel resonator. In each of the filters other than the one filter, one of the input terminal and the output terminal, which is a terminal closer to the antenna element, is connected to the common terminal, and is connected to the series resonator.

Abstract: The present invention relates to a filter module including a substrate, a plurality of filters formed on the substrate, an amplifier formed on the substrate, a connection part for connecting the plurality of filters and the amplifier to the substrate, and a cover layer formed on the substrate to cover the plurality of filters and the amplifier.

Abstract: A surface acoustic wave element includes: a first input wire; a first IDT connected to the first input wire; a second input wire; a second IDT connected to the second input wire; an output wire; and a third IDT connected to the output wire and installed between the first IDT and the second IDT, wherein the first input wire, the second input wire and the output wire are adjacent to each other and withdrawn in a same direction, and a capacitance pattern for applying capacitance is connected at least either between the first IDT and the third IDT or between the second IDT and the third IDT.

Abstract: A semiconductor die is disclosed upon which is formed direct current (DC) isolated first and second circuits. The first circuit is configured for electrical connection to a first ground. The second circuit is configured for electrical connection to a second ground. The first and second grounds can be at different potentials. The first and second circuits were formed using front end of line (FEOL) and back end of line (BEOL) processes. The first circuit includes a plurality of first devices, such as transistors, which were formed during the FEOL process, and the second circuit includes only second devices, such as transistors, which were formed during the BEOL process.

Abstract: A ladder filter that sufficiently attenuates a signal in a frequency range in a vicinity of a pass band on a lower-frequency side of the pass band includes a plurality of series arm resonators and at least three parallel arm resonators provided in at least three respective parallel arms. One of the at least three parallel arm resonators farthest from an input terminal and an output terminal, is subjected to parallel division to include a first division resonator and a second division resonator. The second division resonator has the highest resonant frequency and the smallest electrostatic capacitance of all of the parallel arm resonators and the division resonators.

Abstract: A high-frequency filter includes a first output to output a first signal, a first filter, a second filter, and a first matching circuit connected to an output of the first filter and to an output of the second filter. The first signal is provided to the first output from one of the output of the first filter and the output of the second filter via the first matching circuit. The first matching circuit includes a resonator connected in series between the first output and the output of only one of the first filter and the second filter.

Abstract: Radio frequency (RF) receiver design is a challenging task, involving conflicting requirements such as tight link budget, small footprint, low insertion loss, tuning and out-of-band rejections. Methods and devices are described to allow RF receiver design meeting stringent requirements at higher frequencies while preserving a small footprint and without affecting the overall performance.

Abstract: A multiplexer includes filters and a common terminal connected to an antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal. A terminal closer to the antenna element among an input terminal and an output terminal of one filter among the filters is connected to a parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween. A terminal closer to the antenna element among an input terminal and an output terminal of each of other filters other than the one filter among the filters is connected to the common terminal and a series resonator.

Abstract: In a high frequency module, in addition to a main transmission path in which a high-frequency signal propagates in first filter elements, a sub transmission path is defined by inductive coupling or capacitive coupling between a first inductor and a matching element or by inductive coupling between the first inductor and a second inductor. The sub transmission path has different amplitude characteristics and phase characteristics from those of the main transmission path depending on a degree of the inductive coupling or capacitive coupling, and transmission characteristics as a high-frequency module are adjustable by adjusting the amplitude characteristics and the phase characteristics of the sub transmission path.

Abstract: A branching device that separates signals of different pass bands increases attenuation characteristics outside the pass bands, and increases isolation characteristics. The branching device includes a duplexer including a transmission filter and a reception filter electrically connected to an antenna terminal, and a filter electrically connected to the antenna terminal. An inductor is electrically connected between the antenna terminal and a ground potential. The transmission filter is a ladder filter including serial arm resonators and parallel arm resonators, and each includes a polarized inductor electrically connected between the parallel arm resonators and a ground potential. The inductor and the polarized inductors inductively couple with each other, and a distance between the inductor and the polarized inductors is shorter than a distance between the polarized inductors.

Abstract: A ladder-type surface acoustic wave filter includes interdigital transducer electrodes disposed on a LiTaO3 piezoelectric substrate, and series resonators and parallel resonators defined by the interdigital transducer electrodes, and utilizes a leaky wave that propagates on the LiTaO3 piezoelectric substrate. A bandwidth ratio indicating a bandwidth of a passband of the ladder-type surface acoustic wave filter is about 2.5% or greater, and a cutoff frequency due to bulk wave radiation of one of the parallel resonators, is in a frequency range higher than the passband.

Abstract: A branching device (10) includes a switch (SW1), a fixed filter circuit (11), and a tunable filter (TF1). The switch (SW1) includes a common terminal (Ps11) and individual terminals (Ps12, Ps13). The fixed filter circuit (11) is connected to the individual terminal (Ps12) and has a fixed pass band. The tunable filter (TF1) is connected to the individual terminal (Ps13) and has a tunable pass band. The fixed filter circuit (11) includes filters (FIL1, FIL2) having different pass bands. The pass bands of the filters (FIL1, FIL2) correspond to frequency bands to be used in carrier aggregation.

Abstract: Provided is a variable filter circuit that can control the bandwidth and center frequency of a pass band, can realize steep attenuation characteristics in bands close to the pass band, and enables the total number of variable reactance units to be reduced. A variable filter circuit includes an inductor (Ls1) and a capacitor (Cs1), which are connected in series between a first input/output terminal (P1) and a second input/output terminal (P2), and resonators (Re_p1, Re_p2, Re_p3, Re_p4) and variable capacitors (Cc1, Cc2, Cc3, Cc4), which are connected in series between two ends of the inductor (Ls1) and the capacitor (Cs1) and ground connection terminals.

Abstract: A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.

Abstract: A ladder-type filter includes: one or more series resonators connected in series between an input terminal and an output terminal; two or more parallel resonators connected in parallel between the input terminal and the output terminal; a first inductor connected in series between at least two nodes, each of the at least two nodes being located between a corresponding parallel resonator of at least two parallel resonators of the two or more parallel resonators and ground; and a first capacitor connected in series with the first inductor between the at least two nodes.

Abstract: A filter apparatus includes a plurality of stages of ladder circuits connected between an input terminal and an output terminal, and a band width ratio is about 4.3 % or higher. The ladder circuits of respective stages include series arm resonators, parallel arm resonators, first inductors respectively connected between a ground potential and first end portions, and second inductors respectively connected between the ground potential and second end portions.

Abstract: An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.

Abstract: A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An acoustic wave device includes: a substrate; a first acoustic wave resonator and a second acoustic wave resonator located on the substrate; a first wiring line electrically coupled to the first acoustic wave resonator, located on the substrate, and located between the first acoustic wave resonator and the second acoustic wave resonator; and a second wiring line electrically coupled to the second acoustic wave resonator, located on the substrate, located between the first acoustic wave resonator and the second acoustic wave resonator, having an electric potential different from an electric potential of the first wiring line, and having a thickness greater than a thickness of the first wiring line.

Abstract: An RF module comprises: a first front end module (FEM) which allows a signal of a first bandwidth to pass and blocks a signal of a second bandwidth according to a first time constant which is determined by a plurality of devices provided in the inside thereof and a second FEM which blocks the signal of the first bandwidth and allows the signal of the second bandwidth to pass according to a second time constant which is determined by the plurality of devices provided in the inside thereof.

Abstract: An electroacoustic component is specified in which the disturbing contributions of undesired wave modes are reduced. For this purpose, a component includes a piezo layer, an electrode layer and a separating layer. A main mode and a secondary mode are capable of propagation in the component. The separating layer has an opposite thickness dependence for the frequencies of the main mode and of the secondary mode.

Abstract: Radio frequency (RF) filtering circuitry includes transmit signal filtering circuitry and receive signal filtering circuitry. The RF filtering circuitry is configured to separate RF transmit signals within a transmit signal frequency band from RF receive signals within a receive signal frequency band. A tunable impedance is coupled to the transmit signal filtering circuitry and adjusted such that the attenuation of the RF transmit signals is greater in a first portion of the receive signal frequency band than in a second portion of the receive signal frequency band in a first mode of operation, and greater in the second portion of the receive signal frequency band than in the first portion of the receive signal frequency band in a second mode of operation.

Abstract: A multiplexer (MUL) having fewer intermodulation products is specified. For this purpose, the multiplexer (MUL) comprises a transmit and/or receive filter (Tx, Rx), which operates with acoustic waves, and blocker electrodes (EL1, EL2) for diverting undesired frequency components to ground (GND). The blocker electrodes (EL1, EL2) are arranged in this case on the same chip (CH) as the filter which operates with acoustic waves.

Abstract: A multiplexer includes a n number (n is an integer equal to three or more) of filters that are individually provided in the n number of paths commonly connected at a common junction point, and that have different pass bands from one another. In the multiplexer, (n?1) filters among the n number of filters except for the first filter have impedances of which imaginary components cancel each other at a pass band frequency of the first filter when viewed from the common junction point in a state of the n number of paths being not commonly connected.

Abstract: In a high-frequency module, a phase and amplitude of a high-frequency signal from a connection conductor between filter devices change due to the signal being transmitted by a takeout circuit unit. When the high-frequency signal at a third external connection terminal is a suppression signal and a high-frequency signal passing through the first filter circuit is a suppression-target signal, the transmission distance in the takeout circuit unit is such that the phase of the suppression signal is approximately inverted with respect to the phase of the suppression-target signal and the suppression signal has approximately the same amplitude as the suppression-target signal. The suppression signal is mixed with the suppression-target signal and components outside of the pass band are cancelled out and the attenuation characteristics of the filter circuit are enhanced.

Abstract: A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

Abstract: Methods of designing band-pass filters are disclosed. A baseline filter design is established, the baseline filter design including a plurality of surface acoustic wave resonators having respective resonant frequencies, the surface acoustic wave resonators organized by resonant frequency into two or more groups. One or more alternative filter designs are established, each alternative filter design derived from the baseline filter design by reordering the resonant frequencies of two or more surface acoustic wave resonators within at least one of the two or more groups. A respective performance metric related to input impedance over a pass band is calculated for each of the baseline filter design and the alternative filter designs. A final filter design is selected from the baseline filter design and the alternative filter designs based on the respective performance metrics.

Abstract: A filter unit of a high-frequency module includes a plurality of SAW resonators connected in series between a first series connection terminal and a second series connection terminal, first shunt connection terminals, a second shunt connection terminal, and a plurality of SAW resonators. A connection line interconnecting the SAW resonators is connected to the first shunt connection terminal through one of the SAW resonators. The first shunt connection terminal is connected to a ground through an inductor. A matching circuit is connected between the second series connection terminal and a second external connection terminal. The matching circuit is inductively or capacitively coupled to the inductor.

Abstract: A high-frequency module includes a connection line that interconnects a first SAW resonator and a second SAW resonator, and is connected to a second shunt connection terminal through a third SAW resonator. A connection line interconnecting a fourth SAW resonator and a second series connection terminal is connected to the second shunt connection terminal through a fifth SAW resonator. The second shunt connection terminal is connected to a ground through an inductor. A matching circuit is connected between a first series connection terminal and a first external connection terminal. The matching circuit is inductively or capacitively coupled to the inductor.

Abstract: Resonant rectifier topologies are described for tuning the rectifier so that it performs from an electromagnetic interference (EMI) point of view, while maintaining the voltage regulation at the output that a series tuned rectifier would maintain. Examples include a an inductor of a receive coupler and a rectifier connectable to drive a load, along with first and second filter elements that are each configured to provide an impedance inversion function in a frequency band and that are connected in series between the inductor of a receive coupler and rectifier. In one set of examples, both filter elements are implemented as pair filters, while in other examples the first filter element includes the inductor of a receive coupler in parallel with a capacitance connected to ground.

Abstract: A high frequency module includes a first external connection terminal, a second external connection terminal, a filter unit, a first matching circuit, and a second matching circuit. The filter unit is connected between the first external connection terminal and the second external connection terminal. The first matching circuit is connected between the first external connection terminal and the filter unit. The second matching circuit is connected between the second external connection terminal and the filter unit. The first matching circuit and the second matching circuit are inductively or capacitively coupled to each other.

Abstract: A branching 1 filter has an antenna terminal 3 which receives signal waves and disturbance waves, a transmission filter 11 which is connected to the antenna terminal 3, a reception filter 13 which is connected to the antenna terminal 3 and receives a portion of the signal waves and has, as a passband, a frequency range higher than a passband of the transmission filter 11, and a disturbance wave resonator which is connected to the antenna terminal 3 and to the ground and positioned closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. The disturbance wave resonator 15 is connected to antenna terminal 3 at a position closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. A resonance frequency of the disturbance wave resonator 15 is within a frequency range smaller than the passband of the transmission filter and includes a frequency range of the disturbance waves.

Abstract: A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.

Abstract: A tunable filter using Love waves includes an inductance for band extension connected to each of piezoelectric resonators, variable capacitances are connected to the piezoelectric resonator, the piezoelectric resonators each include a LiNbO3 substrate and an IDT electrode, and a pass band and an attenuation region are positioned in a frequency region on a lower frequency side relative to a value obtained by a calculation in which an acoustic velocity of a low-velocity transversal wave propagating in the LiNbO3 substrate is divided by a wave length defined by a period of the IDT electrode.

Abstract: A multiplexer includes filters connected to each other at a common terminal, a low-frequency filter with a first pass band, and a high-frequency filter with a second pass band that is higher than the first pass band. The low-frequency filter includes an initial-stage filter section including at least one first elastic wave resonator located on the common terminal side among at least two elastic wave resonators, and a subsequent-stage filter section that includes a second elastic wave resonator other than the at least one first elastic wave resonator. A reflection coefficient in the second pass band when the initial-stage filter section is viewed from the common terminal side as a single component is larger than a reflection coefficient in the second pass band when the subsequent-stage filter section is viewed from the common terminal side as a single component.

Abstract: A capacitor having improved linear properties is provided. The capacitor is compatible with manufacturing processes of components which function using BAW. The capacitor comprises a first and a second electrode (E1, E2) in a first electrically conductive layer and a third electrode (E3) in a second electric layer. A dielectric layer (DL) is arranged between the electrically conductive layers. The first electrode (E1) and the second electrode (E2) are the terminal electrodes of the capacitor.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.

Abstract: One embodiment is directed to a distributed antenna system comprising a host unit and at least one remote antenna unit that is communicatively coupled to the host unit. The remote antenna unit is configured to perform self-interference suppression processing in an upstream signal path using, as an input thereto, a feedback signal derived from the downstream radio frequency signal radiated from the antenna. Other embodiments are disclosed.

Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and an air cavity disposed in the substrate below at least a portion of a main membrane region defined by an overlap between the first electrode. The acoustic resonator structure may further comprise various integrated structures at or around the main membrane region to improve its electrical performance.