Monolithic Structure Patents (Class 333/191)
  • Patent number: 10075147
    Abstract: An acoustic resonator is provided in which loss of acoustic waves in a transverse direction may be reduced through a cavity formed in an acoustic resonance unit including a first electrode, a piezoelectric layer, and a second electrode, and in which acoustic waves in a longitudinal direction may be reduced by forming an air gap between the acoustic resonance unit and a substrate. Whereby, a quality factor may be improved.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: September 11, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Moon Chul Lee, Jea Shik Shin, Young Gyu Lee, Ho Soo Park, Duck Hwan Kim
  • Patent number: 9590163
    Abstract: The invention relates to an electronic component having a layer sequence, which comprises at least a first electrode (10), a second electrode (20) and an active region (30) and contains monoatomic carbon layers at least in sub-regions.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: March 7, 2017
    Assignee: EPCOS AG
    Inventors: Edgar Schmidhammer, Gudrun Henn
  • Patent number: 9268092
    Abstract: The various technologies presented herein relate to various hybrid phononic-photonic waveguide structures that can exhibit nonlinear behavior associated with traveling-wave forward stimulated Brillouin scattering (forward-SBS). The various structures can simultaneously guide photons and phonons in a suspended membrane. By utilizing a suspended membrane, a substrate pathway can be eliminated for loss of phonons that suppresses SBS in conventional silicon-on-insulator (SOI) waveguides. Consequently, forward-SBS nonlinear susceptibilities are achievable at about 3000 times greater than achievable with a conventional waveguide system. Owing to the strong phonon-photon coupling achievable with the various embodiments, potential application for the various embodiments presented herein cover a range of radiofrequency (RF) and photonic signal processing applications. Further, the various embodiments presented herein are applicable to applications operating over a wide bandwidth, e.g. 100 MHz to 50 GHz or more.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: February 23, 2016
    Assignee: Sandia Corporation
    Inventors: Robert L. Jarecki, Jr., Peter Thomas Rakich, Ryan Camacho, Heedeuk Shin, Jonathan Albert Cox, Wenjun Qiu, Zheng Wang
  • Patent number: 9255912
    Abstract: An apparatus comprises a thin-film bulk acoustic resonator such as including an acoustic mirror, a piezoelectric region acoustically coupled to the acoustic mirror, and first and second conductors electrically coupled to the piezoelectric region. In an example, an integrated circuit substrate can include an interface circuit connected to the first and second conductors of the resonator, the integrated circuit substrate configured to mechanically support the resonator. An example can include an array of such resonators co-integrated with the interface circuit and configured to detect a mass change associated with one or more of a specified protein binding, a specified antibody-antigen coupling, a specified hybridization of a DNA oligomer, or an adsorption of specified gas molecules.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: February 9, 2016
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Matthew Johnston, Kenneth Shepard, Ioannis Kymissis
  • Patent number: 9222823
    Abstract: An oscillating device for a fill-level measurement system includes a drive element in operative connection with a diaphragm. The drive housing receives the drive element at an open-ended front side and includes a first housing part and a second housing part in an operative axially interfitting arrangement proximate the drive element. A flexible conductor in operative connection joins the drive element and extends in a sung-fit arrangement between the first housing part and the second housing part providing improved operative performance.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: December 29, 2015
    Assignee: VEGA GRIESHABER KG
    Inventor: Gerd Ohmayer
  • Patent number: 9197185
    Abstract: An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: November 24, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Qiang Zou, Zhiqiang Bi, Kristina Lamers, Richard C. Ruby
  • Patent number: 9154111
    Abstract: A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: October 6, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Paul Bradley, Alexandre Shirakawa, Stefan Bader
  • Patent number: 9041492
    Abstract: A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: May 26, 2015
    Assignee: Massachusetts Institute of Technology
    Inventors: Wentao Wang, Dana Weinstein
  • Patent number: 8952768
    Abstract: A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 ?m thick or less, preferably approximately 325 ?m, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: February 10, 2015
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Edward Martin Godshalk, Rick D. Lutz, Masud Hannan, Ralph N. Wall, Uppili Sridhar
  • Patent number: 8896396
    Abstract: Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: November 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Jun Chul Kim, In Sang Song, Young Il Kim, Duck Hwan Kim, Sang Uk Son, Jea Shik Shin, Hyung Rak Kim
  • Patent number: 8896395
    Abstract: A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: November 25, 2014
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, Phil Nikkel, Chris Feng
  • Patent number: 8797123
    Abstract: An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: August 5, 2014
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, Chris Feng, Stefan Bader
  • Patent number: 8680931
    Abstract: A periodic signal generator is configured to generate high frequency signals characterized by relatively low temperature coefficients of frequency (TCF). This generator may include an oscillator containing a pair of equivalent MEMs resonators therein, which are configured to support bulk acoustic wave and surface wave modes of operation at different resonance frequencies. Each resonator includes a stack of layers including a semiconductor resonator body (e.g., Si-body), a piezoelectric layer (e.g., AIN layer) on the resonator body and interdigitated drive and sense electrodes on the piezoelectric layer. The oscillator is configured to support the generation of first and second periodic signals having unequal first and second frequencies (f1, f2) from first and second resonators within the pair. These first and second periodic signals are characterized by respective first and second temperature coefficients of frequency (TCf1, TCf2), which may differ by at least about 10 ppm/° C.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: March 25, 2014
    Assignee: Integrated Device Technology Inc.
    Inventor: Wanling Pan
  • Patent number: 8674789
    Abstract: In one aspect of the invention, an acoustic device has a first coupled resonator filter (CRF) and a second CRF electrically coupled to one another in series. Each CRF has an input port, an output port, a bottom film bulk acoustic resonator (FBAR), an acoustic decoupler formed on the bottom FBAR, and a top FBAR formed on the acoustic decoupler. Each FBAR has a bottom electrode, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. The decoupling layer capacitance arising between the two electrodes enclosing the acoustic decoupler in a CRF is configured to achieve targeted filter response. A compensating capacitance is introduced to improve the amplitude and phase imbalance performance of an unbalanced to balanced CRF by eliminating the existence of asymmetric port-to-ground or feedback capacitance at the balanced output port produced by the decoupling layer capacitance.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: March 18, 2014
    Inventors: Wei Pang, Hao Zhang
  • Patent number: 8606207
    Abstract: A filter includes a first port, a second port, a first fractal curve based filter element coupled to the first port, and a second fractal curve based filter element coupled to the second port. The first fractal curve based filter element has first electromagnetic properties and the second fractal curve based filter element has second electromagnetic properties. The first fractal curve based filter element is electromagnetically coupled to the second fractal curve based filter element to filter radio frequency (RF) signals.
    Type: Grant
    Filed: February 21, 2011
    Date of Patent: December 10, 2013
    Assignee: Broadcom Corporation
    Inventors: Nicolaos G. Alexopoulos, Seunghwan Yoon
  • Publication number: 20130214879
    Abstract: An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material.
    Type: Application
    Filed: October 10, 2011
    Publication date: August 22, 2013
    Inventors: Marie Gorisse, Alexandre Reinhardt
  • Patent number: 8512800
    Abstract: Methods of reducing phase and amplitude ripples in a BAW resonator frequency response by providing a substrate, fabricating a Bragg mirror having alternate layers of a high acoustic material and a low acoustic material on a first surface of the substrate, fabricating a BAW on the Bragg mirror, and coating a second side of the substrate opposite the first side with a lossy material having an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high impedance material, the second surface of the substrate being a polished surface. Various embodiments are disclosed.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: August 20, 2013
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Edward Martin Godshalk, Rick D. Lutz, Masud Hannan, Ralph N. Wall, Uppili Sridhar
  • Publication number: 20120280767
    Abstract: A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 8, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Dariusz BURAK, Chris FENG, Alexandre SHIRAKAWA, Stefan BADER
  • Publication number: 20120274418
    Abstract: A branching filter includes a ladder-type elastic wave filter unit connected between an antenna terminal and a transmission signal terminal and a longitudinally coupled resonator-type elastic wave filter unit connected between an antenna terminal and first and second balanced reception signal terminals while maintaining the isolation characteristics between the transmission signal terminal and the first and second reception signal terminals. In a duplexer, a transmission signal propagation direction is perpendicular or substantially perpendicular to each of a first reception signal propagation direction and a second reception signal propagation direction.
    Type: Application
    Filed: July 12, 2012
    Publication date: November 1, 2012
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshiaki TAKATA, Shigeyuki FUJITA
  • Patent number: 8264291
    Abstract: Disclosed herein is a resonator including, a vibrating portion having a conductor portion, and three or more insulating portions provided so as to electrically separate the conductor portion into a plurality of blocks, wherein when a potential difference is caused across both ends in each of the three or more insulating portions, the vibrating portion carries out a resonance vibration based on a longitudinal vibration in accordance with a frequency of an A.C. signal inputted to each of corresponding ones of the plurality of blocks in the conductor portion.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: September 11, 2012
    Assignee: Sony Corporation
    Inventor: Shinya Morita
  • Publication number: 20120218059
    Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.
    Type: Application
    Filed: August 12, 2011
    Publication date: August 30, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Dariusz BURAK, Stefan BADER, Alexandre SHIRAKAWA, Phil NIKKEL
  • Publication number: 20120218057
    Abstract: A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
    Type: Application
    Filed: June 2, 2011
    Publication date: August 30, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Dariusz BURAK, Phil NIKKEL, Chris FENG, Alexandre SHIRAKAWA, John CHOY
  • Publication number: 20120218056
    Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.
    Type: Application
    Filed: February 28, 2011
    Publication date: August 30, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventor: Dariusz Burak
  • Publication number: 20120218060
    Abstract: A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
    Type: Application
    Filed: August 12, 2011
    Publication date: August 30, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, Phil Nikkel, Jyrki Kaitila, John D. Larson, III, Alexandre Shirakawa
  • Publication number: 20120218058
    Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.
    Type: Application
    Filed: June 24, 2011
    Publication date: August 30, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Dariusz BURAK, Alexandre SHIRAKAWA, Chris FENG, Phil NIKKEL, Stefan BADER
  • Patent number: 8253513
    Abstract: The present invention in one aspect relates to an acoustic wave resonator having an acoustic reflector, a piezoelectric layer, a composite structure having a first electrode, a temperature compensation layer formed on the first electrode, having one or more vias or trenches formed therein, and a second electrode formed on the temperature compensation layer and electrically connected to the first electrode at least through the one or more vias or trenches, and a third electrode, where the composite structure is disposed under the piezoelectric layer, on the piezoelectric layer, or inside the piezoelectric layer.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: August 28, 2012
    Inventor: Hao Zhang
  • Patent number: 8228138
    Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: July 24, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Motoaki Hara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Masafumi Iwaki, Tokihiro Nishihara, Masanori Ueda
  • Publication number: 20120146744
    Abstract: An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion.
    Type: Application
    Filed: February 16, 2012
    Publication date: June 14, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro NISHIHARA, Shinji TANIGUCHI, Tsuyoshi YOKOYAMA, Masanori UEDA
  • Patent number: 8198958
    Abstract: An RF system includes a power amplifier with output impedance and a BAW filter with an input impedance and output impedance. A matching network includes an inductance connecting the power amplifier to the BAW filter and an impedance transformation ratio of at least 1:10 is provided at the output impedance of the power amplifier to the output impedance of the BAW filter.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: June 12, 2012
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Robert Aigner, Gernot G. Fattinger, Mikhail S. Shirokov, Jun C. Jadormio
  • Patent number: 8188811
    Abstract: A filter with coupled resonator having a substrate; an acoustic mirror intended to support acoustic resonators, and to isolate these resonators from the substrate; a first structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; a second structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; the lower resonators of the first and second structure having the same electrodes. The first and second structures are connected via a fifth resonator for which electrodes and the piezoelectric layer of the lower resonators are of the first and second structure.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: May 29, 2012
    Assignees: STMicroelectronics S.A., Centre National de la Recherche Scientifique (C.N.R.S.)
    Inventors: Andrea Cathelin, Didier Belot, Alexandre Augusto Shirakawa, Eric Kerherve, Jean-Marie Pham, Pierre Jary
  • Patent number: 8098118
    Abstract: A bandpass filter includes a combination of a BAW filter and a patterned planar filter with stubs. The BAW filter is composed of a plurality of piezoelectric resonators to give a specific frequency bandpass, while the planer filter is configured to attenuate frequencies near and outside the bandpass. The resonators are connected in a ladder configuration between a first signal transmission path and a ground. The planar filter includes a strip line formed on a dielectric layer to define a second signal transmission path. The BAW filter and the planar filter are formed on a common substrate with the first and second transmission paths connected to each other. The BAW filter, in combination with the patterned planar filter added with the stub, can improve a deep near-band rejection inherent to the BAW filter, exhibiting an excellent out-of-band rejection over certain adjacent frequency ranges outside of the bandpass, and therefore give a sharp and wide bandpass.
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: January 17, 2012
    Assignee: Panasonic Electric Works Co., Ltd.
    Inventors: Atsushi Suwa, Koji Sasabe, Futoshi Nishimura, Yoshiki Hayasaki, Tomoaki Matsushima, Sibei Xiong, Takaaki Yoshihara, Norihiro Yamauchi, Takeo Shirai
  • Publication number: 20110273243
    Abstract: An electrical signal combiner includes at least one first element and a second element respectively connected to a first input port and to a second input port, and a third element connected to an output port, the electrical signals being propagated between the input and output ports. The combiner includes a medium; and the first, second and third elements are acoustic wave transducers, the electrical signals being carried by acoustic waves propagated between the input and output ports within the medium.
    Type: Application
    Filed: May 3, 2011
    Publication date: November 10, 2011
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frédéric DOMINGUE, Alexandre REINHARDT
  • Patent number: 8049581
    Abstract: A piezoelectric filter of the present invention is provided with first and second piezoelectric vibrators, each having a substrate, a lower load film formed on the substrate, a lower electrode formed on the lower load film, a piezoelectric element formed on the lower electrode, an upper electrode formed on the piezoelectric element and an upper load film formed on the upper electrode, and the piezoelectric filter is configured by electrically connecting the first and second piezoelectric vibrators to each other, and the piezoelectric element of the first piezoelectric vibrator and the piezoelectric element of the second piezoelectric vibrator correspond to respectively different areas of the same piezoelectric element; thus, the resonance frequencies of the first and second piezoelectric vibrators are adjusted by the respective lower load films and upper load films of the first piezoelectric vibrator and the second piezoelectric vibrator so that the resonance frequencies of the first and second piezoelectric
    Type: Grant
    Filed: November 19, 2008
    Date of Patent: November 1, 2011
    Assignee: Panasonic Corporation
    Inventors: Tomohiro Iwasaki, Hiroshi Nakatsuka, Keiji Onishi
  • Patent number: 8018303
    Abstract: An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: September 13, 2011
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Martin Handtmann, Jyrki Kaitila, Robert Thalhammer, Bernhard Gebauer
  • Publication number: 20110204996
    Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
    Type: Application
    Filed: February 23, 2010
    Publication date: August 25, 2011
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Steve Gilbert, Rick Snyder, John D. Larson, III, Phil Nikkel
  • Publication number: 20110204997
    Abstract: In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.
    Type: Application
    Filed: February 23, 2010
    Publication date: August 25, 2011
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Lueder Elbrecht, Robert Thalhammer
  • Patent number: 7863699
    Abstract: Bonded wafer packages having first and second wafers bonded together forming a matrix of sealed devices, at least one of the wafers having a plurality of passive devices formed thereon, including at least one BAW resonator within each of the sealed devices, the first wafer having conductor filled through-holes forming electrical connections between the passive devices and connections assessable from outside the sealed devices, the bonded wafers being diced to form individual sealed devices. The devices may be duplexers, interstage filters or other circuits such as VCOs and RF circuits. Various embodiments are disclosed.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: January 4, 2011
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Hans Dropmann, Uppili Sridhar, Carlton Stuebing
  • Patent number: 7804383
    Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: September 28, 2010
    Assignee: STMicroelectronics SA
    Inventors: Alexandre Volatier, Pascal Ancey, Bertrand Dubus
  • Patent number: 7719388
    Abstract: Disclosed is a resonator that is mounted on a substrate, operates with acoustic bulk waves, and is disposed above an acoustic mirror. According to the invention, the basic mode of the acoustic bulk wave that can be generated in the resonator is suppressed while a higher mode can be excited in parallel and be utilized for the resonator by adjusting the acoustic mirror.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: May 18, 2010
    Assignee: EPCOS AG
    Inventor: Edgar Schmidhammer
  • Publication number: 20100019866
    Abstract: An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators.
    Type: Application
    Filed: July 15, 2009
    Publication date: January 28, 2010
    Applicant: FUJITSU LIMITED
    Inventors: Motoaki HARA, Tokihiro Nishihara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Masafumi Iwaki, Masanori Ueda
  • Publication number: 20090295505
    Abstract: Phononic crystal wave structures and methods of making same are discussed in this application. According to some embodiments, an acoustic structure can generally comprise a phononic crystal slab configured as a micro/nano-acoustic wave medium. The phononic crystal slab can define an exterior surface that bounds an interior volume, and the phononic crystal slab can be sized and shaped to contain acoustic waves within the interior volume of the phononic crystal slab. The phononic crystal slab can comprise at least one defect portion. The defect portion can affect periodicity characteristics of the phononic crystal slab. The defect portion can be shaped and arranged to enable confinement and manipulation of acoustic waves through the defect portion(s) of phononic crystal slab. Other aspects, features, and embodiments are also claimed and described.
    Type: Application
    Filed: April 30, 2009
    Publication date: December 3, 2009
    Applicant: Georgia Tech Research Corporation
    Inventors: Saeed Mohammadi, Ali Asghar Eftekhar, Ali Adibi
  • Patent number: 7612636
    Abstract: A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.
    Type: Grant
    Filed: January 30, 2006
    Date of Patent: November 3, 2009
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Tiberiu Jamneala, John D. Larson, III, Richard Ruby
  • Patent number: 7609132
    Abstract: A bulk wave acoustic resonant structure which is in accordance with the invention allows the difficulties encountered at high frequency, the impossibility of working at low frequency on simple structures and the absence of an adequate coupling level to be overcome. The invention therefore proposes the use of an additional layer of material which covers the upper electrode of a piezoelectric transducer in order to localize the position of maximum intensity of the dynamic stress close to the centre of the piezoelectric layer through the effect of propagation. The structure that is in accordance with the invention may be associated with Bragg mirrors and various uses are presented.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: October 27, 2009
    Assignees: Temex SAS, Centre National de la Receheche Scientifique
    Inventors: Sylvain Jean Ballandras, William Steichen, Jeremy Masson
  • Patent number: 7557677
    Abstract: In one embodiment, a cascaded monolithic crystal filter is provided. A first filter includes two resonators having a pair of electrodes with the monolithic crystal between. At least one electrode has a periphery which includes a feature capable of shifting a frequency associated with an anharmonic mode in the filter. The filter has a second resonator acoustically coupled to the first resonator. A second filter is cascaded with the first filter. The second filter includes a pair of acoustically coupled resonators.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: July 7, 2009
    Assignee: HRL Laboratories, LLC
    Inventors: Tsung-Yuan Hsu, Randall L. Kubena
  • Patent number: 7554427
    Abstract: A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: June 30, 2009
    Assignee: Hitachi Media Electronics Co., Ltd.
    Inventors: Hisanori Matsumoto, Atsushi Isobe, Kengo Asai
  • Patent number: 7548142
    Abstract: The invention discloses a tuneable resonator (100, 200, 300, 500, 600, 700, 900) with a substrate layer (140, 260, 360, 560, 660, 960), which substrate layer supports a structure with a first electrode (130, 240, 350, 550, 650). In connection to the first electrode there is arranged a layer (120, 230, 330, 530, 630, 930) of a material which can be brought to resonate. The resonator further comprises a second electrode (110, 210, 310, 510, 610, 710, 910) arranged in connection to said material which can be brought to resonate, and the material which can be brought to resonate is a ferroelectric material. The ferroelectric material is brought into resonance by applying an electrical field (DC, AC) between the first and the second electrode, the tuning being achieved by varying the electrical field.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: June 16, 2009
    Assignee: Telefonaktiebolagert L M Ericsson (Publ)
    Inventors: Spartak Gevorgyan, Per Thomas Lewin, Harald Jacobsson, Andrei Vorobiev
  • Patent number: 7541895
    Abstract: An electro mechanical device including: a main body of an electro mechanical device having a lower electrode and a movable member; an overcoat film sealing the main body of the electro mechanical device by maintaining a space, wherein a support post is provided between the overcoat film and the movable member.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: June 2, 2009
    Assignee: Sony Corporation
    Inventors: Masahiro Tada, Shun Mitari, Shinya Morita
  • Patent number: 7508286
    Abstract: An oscillator comprises a substrate and a high tone bulk acoustic resonator (HBAR), which includes a portion of the substrate. The oscillator also comprises a film bulk acoustic resonator (FBAR) filter disposed over the substrate. The filter comprises a plurality of FBAR devices. The oscillator also comprises a plurality of acoustic isolators disposed in the substrate, wherein one of the isolators is disposed beneath each of the FBAR devices. A method of fabricating an oscillator is also disclosed.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: March 24, 2009
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Richard C. Ruby, Wei Pang
  • Patent number: 7479851
    Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: January 20, 2009
    Assignee: Avago Technologies Wireless IP (Singapore) Pte., Ltd.
    Inventors: Robert Aigner, Stephan Marksteiner, Winfried Nessler
  • Patent number: 7456707
    Abstract: An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: November 25, 2008
    Assignee: Panasonic Corporation
    Inventors: Naohiro Tsurumi, Kazuhiro Yahata, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda, Atsuhiko Kanda