Abstract: A tunable filter includes a surface acoustic wave resonator, in which an IDT electrode is defined by an electrode material provided in a recess in an upper surface of a piezoelectric substrate made of LiNbO3 or LiTaO3, and a ZnO film is arranged to cover the upper surface of the piezoelectric substrate, and variable capacitors connected with the surface acoustic wave resonator.

Abstract: A tunable filter includes a circuit configuration in which variable capacitors are connected with surface acoustic wave resonators. The surface acoustic wave resonators each include a piezoelectric substrate made of LiTaO3 or LiNbO3, an IDT electrode made of an electrode material filled in a recess in an upper surface of the piezoelectric substrate, and a SiO2 film arranged to cover the piezoelectric substrate.

Abstract: A surface acoustic wave filter arrangement is described herein. The surface acoustic wave filter arrangement includes a first gate configured to operate symmetrically or asymmetrically, and a second gate configured to operate symmetrically. The filter arrangement also includes a double-mode surface acoustic wave (DMS) filter structure including an input connected to the first gate, and an output. The output includes a terminal pair that includes two symmetrical terminals configured to operate symmetrically. Each of the two symmetrical terminals of the terminal pair is electrically connected at the output of the DMS filter structure to a cascaded resonator.

Abstract: Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5?hr/??8.5% is obtained.

Abstract: The object of the present invention is to provide an elastic wave filter capable of suppressing deterioration of a pass band and realizing to downsize. In the elastic wave filter of the present invention provided with a circuit, to which elastic wave resonators of a first series arm, a second series arm and a parallel wave are connected, the first series arm and one out of the second series arm and the parallel arm are arranged in the lateral direction in a row to be adjacent to each other, and the other out of the second series arm and the parallel arm is disposed on the rear side of the row, and prescribed bus bars in the first series arm, the second series arm and the parallel arm are arranged on the common connection point side.

Abstract: An elastic-wave filter device includes a package substrate and filter mounting pattern provided on a first main surface of the package substrate on which a longitudinally coupled resonator-type elastic-wave filter is mounted, a back-side terminal pattern is provided on a second main surface thereof, and an internal electrode pattern is provided inside the package substrate.

Abstract: An acoustic wave filter includes: a first acoustic wave filter having a first group of multimode filters connected, a first unbalanced input node and two first balanced output nodes, a first multimode filter among the first group of multimode filters being connected to the two first balanced output nodes; and a second acoustic wave filter having a second group of multimode filters, a second unbalanced input node and two second balanced output nodes, a second multimode filter among the second group of multimode filters having an aperture length different from that of the first multimode filter and a connection with the two second balanced output nodes, the first and second multimode filters having different pass bands. One of the two first balanced output nodes and one of the two second balanced output nodes are unified, and the other first balanced output node and the other second balanced output node are unified.

Abstract: A 5-IDT longitudinally coupled resonator type elastic wave filter device includes a narrow-pitch electrode finger portion arranged to increase the steepness of the filter characteristic includes first to fifth IDTs. When the total number of electrode fingers in a first area and a fourth area is Nx and the total number of electrode fingers in a second area and a third area is Ny, an average period of electrode fingers in one of the areas including larger total numbers of the electrode fingers Nx and Ny is greater than that in the area including smaller total numbers of the electrode fingers Nx and Ny.

Abstract: An elastic wave filter device having improved sharpness of filter characteristics includes a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes each including a plurality of electrode fingers, and first and second reflectors. The first to third IDT electrodes include narrower-pitch portions provided in end portions thereof, which are each adjacent to another IDT electrode in a direction of propagation of elastic waves, each of the narrower-pitch portions having a smaller period of electrode fingers than a period of electrode fingers in the remaining portion of the relevant IDT electrode. The number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, differ from each other.

Abstract: An apparatus includes a piezoelectric substrate having a signal line with a first electrical port and a second electrical port, and a first partial filter connected in series with a second partial filter. The partial filters are arranged between the electrical ports. The first partial filter includes a first serial transducer and a second serial transducer located in an acoustic path and in series branches of the signal line. The serial transducers are acoustically coupled with one another. The second partial filter includes a coupler transducer and an end-positioned transducer that are located in a double mode surface acoustic wave (DMS) path. The end-positioned transducer is positioned at an end of the signal line.

Abstract: The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiO2 thin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.

Abstract: An acoustic wave device comprising a piezoelectric layer on an omnidirectional acoustic mirror and excitation and/or reception means on a surface of said piezoelectric layer, capable of exciting waves in a band gap of the acoustic mirror.

Abstract: A component working with guided acoustic waves includes a layer system configured to guide waves in a lateral plane. The layer system includes a piezoelectric layer, electrodes on the piezoelectric layer for exciting the wave, a dielectric layer with an acoustic impedance, and an adjustment layer with an acoustic impedance. A ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5.

Abstract: An acoustic wave filter device has a balance-unbalance conversion function and has an increased out-of-band attenuation. The acoustic wave filter device includes a 5-IDT-type longitudinally coupled resonator-type acoustic wave filter unit including IDTs that are connected between an unbalanced terminal and first and second balanced terminals, and the IDTs and are connected to the first and second balanced terminals, respectively, that is arranged between the unbalanced terminal and the first and second balanced terminals. A second ground wiring that connects the end portions of the unbalanced-side IDT on the side connected to the ground potential to a ground terminal is separated from a first ground wiring. The second ground wiring includes first and second branched wiring portions, and the first and second branched wiring portions are arranged so as to sandwich an area in which the IDTs are provided.

Abstract: In an acoustic wave filter device, first and second acoustic wave filter elements are connected in parallel to an unbalance terminal. Of first to third IDTs, the second and third IDTs are connected to a first balance terminal. Of fourth to sixth IDTs, the fifth and sixth IDTs are connected to a second balance terminal. The first ground terminal is arranged at a position close to the side of the unbalance terminal and shifted to the side of the first acoustic wave filter element. The third ground terminal is arranged in a point-symmetric relationship relative to the first ground terminal with respect to a middle point between the first and second acoustic wave filter elements.

Abstract: A boundary acoustic wave element includes an IDT electrode arranged at the interface between a piezoelectric substance and a dielectric layer, a heat dissipation film is arranged on the outer side surface of the dielectric layer or on the outer side surface of a sound-absorbing film laminated on the outer side of the dielectric layer, the heat dissipation film is arranged to have a portion that overlaps the IDT electrode in plan view, and the heat dissipation film is connected to a bump provided on the outer side surface of the sound-absorbing film, and is connected to a via-hole conductor that extends through the sound-absorbing film. The boundary acoustic wave element and a boundary acoustic wave device are excellent in a heat dissipation property and hence can provide enhanced electric power resistance, without causing an increase in chip size and an increase in the area of the mounting space.

Abstract: An acoustic wave device includes electrodes carried on a surface of a piezoelectric material and an array of reflective obstacles such that elastic energy resulting from a piezoelectric effect is preferentially directed along a primary wave propagation path. The array of reflective obstacles are positioned generally parallel to the surface of the piezoelectric material and redirect acoustic waves typically reflected in other than a desirable direction to along a desired direction generally along the primary propagation path. The obstacles improve performance for SAW and BAW devices by effecting reflected energy and suppressing spurious modes.

Abstract: A surface acoustic wave device includes first interconnections and second interconnections connected to a potential different from a potential connected to the first interconnections that are arranged on a piezoelectric substrate. The first interconnections three-dimensionally intersect with the second interconnections with insulating layers made of a thermosetting resin, disposed therebetween. Interdigital electrodes defining IDTs are films which have six-fold rotational symmetric spots appearing in an XRD pole figure and which are defined by Al films or Al—Cu alloy films containing Cu in an amount not greater than the solubility limit at about 25° C.

Abstract: A duplexer that achieves a reduction in the size and an increase in the performance includes a transmission filter including piezoelectric thin film resonators and a reception filter including piezoelectric thin film resonators and an elastic wave resonator. The piezoelectric thin film resonators of the transmission filter and the piezoelectric thin film resonators and the elastic wave resonator of the reception filter are provided on the same substrate.

Abstract: An inexpensive compact band rejection filter realizes a high sharpness of a filter characteristic at ends of passbands and has a large attenuation. In the band rejection filter, at least one of a plurality of elastic wave resonators, which contributes to formation of a transition band, has a propagation angle larger than those of the other elastic wave resonators. Accordingly, the at least one of the plurality of elastic wave resonators which contributes to the formation of the transition band has an electromechanical coupling coefficient that is smaller than electromechanical coupling coefficients of the other elastic wave resonators.

Abstract: In a duplexer, a transmission elastic wave filter and a reception elastic wave filter are mounted on a laminated substrate, a coil connected between an antenna terminal and a ground potential is provided on the laminated substrate, the reception elastic wave filter has first and second ground pads connected to ground potentials of IDTs connected to first and second balanced terminals, the distance between the second ground pad and the coil is greater than the distance between the first ground pad and the coil, and an inductance component in a conductive path E connecting the second ground pad to the second ground terminal is less than an inductance component in a conductive path D connecting the first ground pad to the first ground terminal, so as to improve isolation characteristics between first and second balanced terminals of a reception filter chip.

Abstract: A surface acoustic wave resonator is constructed such that cross widths of an IDT electrode are weighted so that the cross widths are reduced as they move outward in the surface acoustic wave propagation direction, an inner edge of a first bus bar includes inclined portions that are inclined so that the inner edge is spaced a predetermined distance away from an envelope portion adjacent to the first bus bar, an inner edge of a second bus bar includes inclined portions that are inclined so that the inner edge is spaced a predetermined distance away from an envelope portion adjacent to the second bus bar, and the sum N of the numbers of electrode fingers and dummy electrodes that are crossed by a straight line extending from the tip of at least one of the electrode fingers in the surface acoustic wave propagation direction is at least N.

Abstract: A balance filter includes a first filter having first multimode surface acoustic wave (SAW) filters connected in parallel, a second filter that is connected to the first filter and includes a second multimode SAW filter, a first terminal connected to the first filter, and second terminals connected to the second filter. An input terminal of the balance filter is one of the first and second terminals, and an output terminal thereof is the other. Electric signals transmitted from the first to second filters or vice versa are in opposite phase. Electric signals are input or output via the second terminals in opposite phase.

Abstract: An acoustic wave filter includes a first IDT electrode, a second IDT electrode, and a third IDT electrode. The first IDT electrode includes a first signal electrode finger connected to the unbalanced terminal, and a first ground electrode finger. The second IDT electrode includes a second signal electrode finger connected to a first balanced terminal, and a second ground electrode finger. The third IDT electrode includes a third signal electrode finger connected to the second balanced terminal, and a third ground electrode finger. A dummy electrode finger connected neither to the unbalanced terminal nor to the ground is provided on the second IDT electrode side in the first IDT electrode. Thus, the degree of balance between balanced terminals can be improved.

Abstract: A SAW resonator filter including a SAW resonator, and a first inductive reactance in parallel with the SAW resonator for shifting the null points below and above the center frequency for establishing substantially symmetrical attenuation about the center frequency.

Abstract: A surface acoustic wave (SAW) filter device includes an input port for receiving an unbalanced signal, a pair of input/output ports, a first SAW filter for receiving the unbalanced signal from the input port and outputting balanced signals to the pair of input/output ports, a second SAW filter for receiving the balanced signals output from the pair of input/output ports and outputting balanced signals, and a pair of output ports for outputting the balanced signals output from the second SAW filter. The first SAW filter includes a first longitudinally-coupled SAW resonator having a first unbalanced signal input port and first and second balanced signal output ports, and a second longitudinally-coupled SAW resonator having a second unbalanced signal input port and third and fourth balanced signal output port. The first and second unbalanced signal input ports are electrically connected to the input port.

Abstract: A boundary acoustic wave filter includes an input terminal, an output terminal, a boundary acoustic wave filter unit connected between the input terminal and the output terminal, and a boundary acoustic wave resonator that is connected between the input terminal and the boundary acoustic wave filter unit and includes a piezoelectric substrate, a dielectric layer formed on the piezoelectric substrate, and an IDT electrode that is disposed at a boundary between the piezoelectric substrate and the dielectric layer and has a pair of comb-shaped electrodes interdigitated with each other. The number of pairs of electrode fingers in the IDT electrode in the boundary acoustic wave resonator is in a range of approximately 57.5 to approximately 77.5.

Abstract: A micro-electromechanical resonator comprising a material having anisotropic directional elasticity characteristics. A shape of the resonator is such that a first distance in a first direction from a centroid of the resonator to a first point on a peripheral edge of the resonator is greater than a second distance in a second direction from the centroid to a second different point on the edge. This is true for every first direction and every second direction wherein the material has a lesser modulus of elasticity in the first direction than the second direction.

Abstract: A duplexer includes a transmission filter having a ladder circuit configuration and a reception filter. The reception filter includes an input terminal connected to an antenna terminal, a first reception output terminal, and a second reception output terminal. A first filter element and a second filter element, each of which is a longitudinally coupled resonator filter element including a plurality of IDTs, are connected in parallel to the input terminal so that IDTs are connected to the input terminal. The first filter element the second filter element are connected to the first reception output terminal and the second reception output terminal, respectively.

Abstract: An embodiment provides electrical energy from a source on one side of a medium to a load on the other side of the medium, the embodiment including a first piezoelectric to generate acoustic energy in response to electrical energy from the source, and a second piezoelectric to convert the received acoustic energy to electrical energy used by the load. Other embodiments are described and claimed.

Abstract: A surface acoustic wave filter which includes a first terminal at the input side, a second terminal at the output side, a plurality of resonators electrically connected between the first and the second terminals, and a piezoelectric substrate provided on the upper surfaces of first and second terminals and the plurality of resonators. The piezoelectric substrate is made to have a thickness that is not thicker than 0.2 mm. The filtering characteristic of surface acoustic wave filter can be improved by taking advantage of the above structure.

Abstract: An acoustic wave filter device which attains improved balancing between transmission characteristics of first and second balanced terminals includes first and second 3-IDT longitudinally coupled resonator type acoustic wave filter elements that are connected to an unbalanced terminal in parallel, and one terminal of a first IDT and one terminal of a fourth IDT are connected to each other and further connected to the unbalanced terminal, second and third IDTs are connected to each other and further connected to a first balanced terminal, fifth and sixth IDTs are connected to each other and further connected to a second balanced terminal, and a first ground line which electrically connects the second IDT which is nearer to a first ground terminal than the third IDT to the second ground terminal is longer than a second ground line which electrically connects the fifth IDT which is nearer to the first ground terminal than the sixth IDT to the first ground terminal.

Abstract: An anti-reflective acoustic diffusion device is provided by a group of irregularly dimensioned diffusing elements positioned on an acoustic wave substrate end that diffuse the SAW and eliminate unwanted acoustic reflections from the end of the substrate. The irregularly dimensioned diffusing elements are substantially irregular in size, shape, composition, and location and provide the desired diffusion into a nearly uniform distributed acoustic energy with a random phase. The anti-reflective acoustic diffusion device can be used with SAW, BAW or multiple acoustic wave configurations. This invention also encompasses an anti-reflective acoustic diffusion system and methods for diffusing acoustic reflections with anti-reflective acoustic diffusing elements.

Abstract: Various embodiments are disclosed relating to Q-enhancement cells. According to an example embodiment, a circuit may include an inductor with a quality factor (Q), and a Q-enhancement cell coupled to the inductor. The Q-enhancement cell may include a current source having a variable bias current slope. Stability may, for example, be improved by providing a variable or programmable bias current slope for the Q-enhancement cell. In another example embodiment, a Q-enhancement cell may be used to compensate for Q degradation due to one or more switched capacitors in a circuit. The switched capacitors may be used, for example, for channel or frequency selection for the circuit. In another example embodiment, a Q-enhancement cell may be used to compensate for Q degradation caused by a transmission line.

Abstract: A surface acoustic wave (SAW) filter device includes first and second longitudinally coupled SAW filter units. The first and second filter units are cascade-connected to each other. A phase of a signal flowing through a first signal line electrically connecting second IDTs of the first and second SAW filter units is different by about 180° from a phase of a signal flowing through a signal line electrically connecting third IDTs of the first and second SAW filter units. A SAW resonator is connected between the first and second signal lines. A resonance point of the SAW resonator is set in an attenuation region in the vicinity of the edge of a low frequency side of a filter passband or an anti-resonance point of the SAW resonator is set in an attenuation region in the vicinity of the edge of a high frequency side of the filter passband.

Abstract: An acoustic wave filter device includes first to fourth longitudinally coupled resonator type surface acoustic wave filters that are configured such that the first and second filters are connected to a first balanced signal terminal, the third and fourth filters are connected to a second balanced signal terminal, and a transmission phase of a signal output from the first balanced signal terminal relative to an input signal differs by about 180 degrees with respect to a transmission phase of a signal output from the second balanced signal terminal relative to an input signal. In addition, the number of pairs of electrode fingers of at least one of IDTs of at least one of the first to fourth longitudinally coupled resonator type surface acoustic wave filters is different from the number of pairs of electrode fingers of corresponding IDTs of the remaining first to fourth filters.

Abstract: A band-stop filter is described herein. The band-stop filter includes a piezoelectric substrate and a plurality of surface wave element (SAW) impedance elements on the substrate. The band-stop filter also includes at least one series branch comprising at least one series resonator having a finger period, and a plurality of parallel branches connected electrically in parallel with the series branch, each parallel branch including at least one parallel impedance element comprising an interdigital transducer and having a finger period. The average finger period of the at least one series resonator is greater than the average finger period of the at least one parallel impedance element.

Abstract: A filter for a mobile terminal may include a substrate through which to propagate an acoustic wave; a resonator on a surface of the substrate, the resonator including a first segment and a second segment, the first segment operatively connected to an electrical port; and a switch unit, where the switch unit connects the first segment and the second segment when the switch unit is in one position, the connected first segment and second segment being configured to generate, through the substrate, an acoustic wave at a first frequency, and where the switch unit separates the first segment and the second segment when the switch unit is in another position, the separated first segment being configured to generate, through the substrate, an acoustic wave at a second frequency.

Abstract: A transducer includes an acoustic track in which an acoustic wave can be propagated, the acoustic track having a transversal fundamental mode, the acoustic track being subdivided in a transversal direction into an excitation area and two peripheral areas. The transducer also includes a first outside area and a second outside area bordering the acoustic track such that the acoustic track is arranged in the transversal direction between the first and second outside area. The transducer also includes peripheral areas configured such that the longitudinal phase velocity vRB of the acoustic wave in the respective peripheral area is greater than the longitudinal phase velocity vMB of the wave in the excitation area.

Abstract: The present invention provides a duplexer using a ladder-type filter, which has a small size and is superior in isolation characteristic, and a communication apparatus using such a duplexer. A series resonator (R1) contained in a first filter element (F1) and a parallel resonator (R4) contained in a second filter element (F2) are disposed so as not to allow the elastic wave propagating paths to be overlapped with each other. By disposing them in this manner, it is possible to prevent an elastic wave, leaked from the series resonator (R1) and most influential to the isolation characteristic, from being received by the parallel resonator (R4). Consequently, it is possible to achieve a small-size duplexer that is superior in isolation characteristic.

Abstract: An acoustic wave device includes an input terminal; a balun that is connected to the input terminal, converts a signal input from the input terminal into two anti-phase signals, and outputs the two anti-phase signals; and a filter that is connected to the balun, and outputs the two anti-phase signals input from the balun as balanced output signals. An output impedance of the balun is equal to an input impedance of the filter, and is larger than an output impedance of the filter.

Abstract: A guided acoustic wave resonant device is provided. The device comprises at least two filters (F1, . . . , Fi, . . . , FN), each filter comprising at least two acoustic wave resonators (R11- R12, . . . , Ri1-Ri2, . . . , RN1-RN2), each filter having a useful frequency band (BF1, . . . , BFi, . . . , BFN) centred on a central frequency (f1, . . . , fi, . . . , fN), each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure of period (?ij) and a layer of piezoelectric material, each resonator having a coupling coefficient (k21, k22, . . . , k2n) and a resonant frequency (fr1, . . . , fr2, . . .

Abstract: A component includes a first filter configured to work with acoustic waves. The first filter includes a first sub-filter on a first chip and a second sub-filter on a second chip separate from the first chip. The first filter if a different type of filter, has a different layer structure, or has a different layer thicknesses for at least one layer in comparison to the second filter.

Abstract: An electronic part, an object of which is to improve temperature characteristics and electrical properties, includes a substrate (1), a comb-type electrode (2) that is disposed on the upper surface of the substrate (1), and a protective film (4) that covers the comb-type electrode (2) and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film (4) is L, the width of one pitch of a convex portion (4a) of the unevenness in the uneven shape of the protective film (4) is L1, the width of one pitch of a concave portion (4b) thereof is L2, the pitch width of one pitch of the comb-type electrode (2) is p, the width of one of electrode fingers which form the comb-type electrode (2) is p1 and the width between the electrode fingers is p2, then each parameter is set so that the following expressions are satisfied, L1?p1 and L2?p2 (herein, the correlations of L?p, p1+p2=p and L1+L2=L are satisfied).

Abstract: An acoustic cavity of a surface acoustic wave (SAW) architecture is defined on a piezoelectric substrate by two acoustic reflectors are formed on a piezoelectric substrate. The surface acoustic wave architecture may include at least one alpha interdigitated transducer (IDT) at least three beta IDTs which are placed in acoustic series within the acoustic cavity. The alpha IDT is electrically coupled to a first interface. The beta IDTs are coupled in electrical and acoustic series and are associated with a second interface. At least three beta IDTs are adjacent one another. An additional reflector or an alpha IDT may be placed between two of the beta IDTs.

Abstract: A surface acoustic wave device includes a first filter and a second filter, each of them being a surface acoustic wave (SAW) filter including an odd number of at least three InterDigital Transducers (IDTs); an unbalanced terminal to which an unbalanced signal is input; a first balanced terminal from which a signal having a same phase as the unbalanced signal is output; and a second balanced terminal from which a signal having an opposite phase to the unbalanced signal is output. One of electrodes of a first center IDT and one of electrodes of a second center IDT are commonly connected to the unbalanced terminal, the first center IDT and the second center IDT being one out of the odd number of IDTs and locating at a center in the first filter and the second filter respectively. The number of electrode fingers of the first center IDT is an odd number, and the number of electrode fingers of the second center IDT is an even number.

Abstract: Disclosed is a surface acoustic wave filter comprising two or more IDTs arranged in a propagation direction of the surface acoustic wave, wherein said two or more IDTs include at least one pair of IDTs arranged adjacent to each other in order to be acoustically coupled to each other, and have different numbers of paired electrode fingers, and a pitch between each neighboring two of almost all of the electrode fingers included in one of the pair of IDTs which has the smaller number of paired electrode fingers is made different from one to another in order that the IDTs should include no primary pitch area.

Abstract: A longitudinally-coupled resonator-type acoustic wave device includes first to third IDT electrodes disposed on a piezoelectric material and first and second reflectors disposed in acoustic wave propagation directions. Each of any two IDT electrodes adjacent to each other in the acoustic wave propagation directions, of the first to third IDT electrodes, has a narrower-pitch electrode finger portion at an edge thereof adjacent to the other IDT electrode. Most portions of the first to third IDT electrodes are apodized, and the narrower-pitch electrode finger portions and the electrode finger portions adjacent thereto are normally shaped.

Abstract: A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.

Abstract: A filter includes a first signal line connected to one input-side unbalanced signal terminal, a second signal line connected to another output-side unbalanced signal terminal, a shunt circuit for providing connection between the first and second signal lines in parallel with a surface acoustic wave device, a first capacitor disposed in the first signal line so as to be in series with respect to the surface acoustic wave device, a first inductor disposed in the shunt circuit at a side of the first signal line, and a series resonance circuit having a second capacitor and a second inductor disposed in the shunt circuit at a side of the second signal line.