Abstract: A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wher

Abstract: Apparatus, systems, devices and methods for providing an orthogonal frequency coding technique for surface acoustic wave sensors incorporating the use of multiple parallel acoustic tracks to provide increased coding by phase shifting and delaying a code sequence. The surface acoustic wave sensor includes parallel tracks with multiple reflectors with differing delay offsets to form a complex code sequence. The reflectors may be uniform, but alternatively could include fingers withdrawn, have reflector position modulation, differing frequencies or be spatially weighted.

Abstract: A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbO3 having a principal plane obtained by rotating the Y-axis through about 15 degrees +?10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.

Abstract: An acoustic wave filter device having a balanced-to-unbalanced conversion function, in which the signal balance between a pair of balanced terminals is improved, has, on a piezoelectric substrate, one end of at least one longitudinally coupled resonator type acoustic wave filter and one end of at least one second longitudinally coupled resonator type acoustic wave filter among the rest of acoustic wave filters are commonly connected and connected to an unbalanced terminal, and the other ends of the longitudinally coupled resonator type acoustic wave filters are electrically connected to first and second balanced terminals, respectively, and in which a propagation direction of an acoustic wave in the longitudinally coupled resonator type acoustic wave filter and a propagation direction of an acoustic wave in the second longitudinally coupled resonator type acoustic filter are different from each other.

Abstract: A Lamb-wave resonator includes: a piezoelectric substrate; an IDT electrode disposed on one principal surface of the piezoelectric substrate, having bus bar electrodes each connecting one ends of a plurality of electrode finger elements, the other ends of the plurality of electrode finger elements being interdigitated with each other to form an apposition area; and a pair of reflectors disposed on the one principal surface of the piezoelectric substrate, and respectively arranged on both sides of the IDT electrode in a propagation direction of a Lamb wave, wherein denoting a thickness of the piezoelectric substrate in the apposition area of the electrode finger elements as ti, a thickness of the piezoelectric substrate in areas between respective ends of the apposition area in a direction perpendicular to the propagation direction of the Lamb wave and the bus bar electrodes as tg, and a wavelength of the Lamb wave as ?, the thickness ti exists in a range represented by 0<ti/??3, and a relationship of tg<

Abstract: An elastic wave filter device includes first and second elastic wave filter units connected to an unbalanced terminal. The first and second elastic wave filter units include first to third IDTs and fourth to sixth IDTs, respectively. One end of the first IDT, one end of the second IDT, one end of the fourth IDT, and one end of the sixth IDT are commonly connected together and are connected to the unbalanced terminal. The second IDT and the fifth IDT are each divided into first to third sub-IDT portions in the elastic wave propagation direction, respectively. The second sub-IDT portions of the second and fifth IDTs are connected to first and second balanced terminals, respectively.

Abstract: Apparatus and method for providing high density component assemblies, such as electromechanical or electro-optical assemblies.

Abstract: A filter includes a first filter that is connected between an input node and an output node and is a surface acoustic wave filter, and a second filter that is provided between the input node and the output node and is connected in parallel with the first filter. The first filter has a total number N1 of pairs of electrode fingers of interdigital transducers and the second filter having a total number N2 of pairs of electrode fingers of interdigital transducers, in which N1 is greater than N2.

Abstract: The present invention is directed to using the uniquely high reflectivity that occurs at high angles of incidence at a boundary between two SAW propagation regions for which the incident wave region has a lower SAW phase velocity. In optical systems, this region is known as the region of total internal reflection. Use of total internal reflection for SAW devices is not well known because it usually only occurs over a narrow range of angles and which are high incidence angles.

Abstract: An SAW device includes: a piezoelectric substrate 1; a first and a second SAW elements 2, 3 having three or more odd-number IDT electrodes 4-9 and reflector electrodes 10-13 arranged on the piezoelectric substrate 1; lines 16 which cascade-connect the first and the second SAW elements 2, 3; a first unbalanced signal terminal 14 connected to the IDT electrodes 4, 6 arranged at the both ends of the first SAW elements 2; and a second unbalanced signal terminal 15 connected to the IDT electrodes 7, 9 arranged at the both ends of the second SAW element 3. In each of the first and the second SAW elements 2, 3, one bus bar electrode 17 of each of center IDT electrodes 5, 8 is split into two, and non-split bus bar electrodes 18, 19 of at least one center IDT electrode of the first and the second SAW elements 2, 3 are connected to a reference potential electrode and the lines 16 are made to be balanced signal lines.

Abstract: The present invention provides a surface acoustic wave resonator capable of improving the leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is further formed thereon. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, and the SiO2 thin film is removed from upper sections of the bus-bar electrode regions in the interdigital transducer electrode.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz crystal substrate with an Euler angle of (?1.5°???1.5°, 117°???142°, 41.9°?|?|?49.57°) and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove formed by recessing the quartz crystal substrate between electrode fingers of the IDT, wherein the following expression: 0.01??G where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove, is satisfied and when a line occupancy of the IDT is ?, the depth of the inter-electrode-finger groove G and the line occupancy ? are set to satisfy the following expression: ?2.5×G/?+0.675????2.5×G/?+0.775.

Abstract: A surface acoustic wave device comprises a surface acoustic wave element, including: a piezoelectric substrate, a first interdigital transducer unit having a first interdigital transducer and a second interdigital transducer formed on the piezoelectric substrate, and a second interdigital transducer unit having a third interdigital transducer and a fourth interdigital transducer formed on the piezoelectric substrate; a first terminal electrically coupled to the first interdigital transducer; a second terminal electrically coupled to the second interdigital transducer; a first variable resistor electrically coupling the first terminal to the third interdigital transducer; a second variable resistor electrically coupling the first terminal to the fourth interdigital transducer; a third variable resistor electrically coupling the second terminal to the third interdigital transducer; and a fourth variable resistor electrically coupling the second terminal to the fourth interdigital transducer.

Abstract: A surface acoustic wave device includes a base substrate, first and second surface acoustic wave filters mounted on a surface of the base substrate, and a sealer provided on the surface of the base substrate and covering the first and second surface acoustic wave filters. The first and second surface acoustic wave filters include first and second piezoelectric substrates. The second piezoelectric substrate is located away from the first piezoelectric substrate via a gap. This surface acoustic wave device reduces inter-modulation.

Abstract: An acoustic wave filter device has a balance-unbalance conversion function and has an increased out-of-band attenuation. The acoustic wave filter device includes a 5-IDT-type longitudinally coupled resonator-type acoustic wave filter unit including IDTs that are connected between an unbalanced terminal and first and second balanced terminals, and the IDTs and are connected to the first and second balanced terminals, respectively, that is arranged between the unbalanced terminal and the first and second balanced terminals. A second ground wiring that connects the end portions of the unbalanced-side IDT on the side connected to the ground potential to a ground terminal is separated from a first ground wiring. The second ground wiring includes first and second branched wiring portions, and the first and second branched wiring portions are arranged so as to sandwich an area in which the IDTs are provided.

Abstract: An acoustic wave filter device is capable of increasing the steepness of a filter characteristic at a boundary between a passband and an attenuation band and achieving a low loss in the passband. The acoustic wave filter device has a ladder circuit configuration including a plurality of series arm resonators and at least one parallel arm resonator. The anti-resonant frequency of the series arm resonator is different from that of the series arm resonator. The series arm resonator having the lowest anti-resonant frequency has a resonant frequency located in the passband and an electromechanical coupling coefficient less than an average of electromechanical coupling coefficients of the series arm resonators.

Abstract: A surface acoustic wave element includes a piezoelectric member, a comb-teeth electrode, and a reflector. The comb-teeth electrode is arranged on the piezoelectric member. The reflector is arranged on the piezoelectric member. The reflector reflects a surface acoustic wave transmitted from the comb-teeth electrode. The reflector has a plurality of areas, and each of the areas has a frequency to make a reflection efficiency the largest. At least two of the frequencies of the areas are made different from each other.

Abstract: An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.

Abstract: In an elastic wave filter in which an IDT is configured in a tapered shape, an object of the present invention is to provide a technology capable of suppressing deterioration of attenuation characteristics due to refraction and the like of the elastic wave and also suppressing loss. Then, an input side area adjacent to an input side tapered IDT electrode of this short grating electrode and an output side area close to an output side tapered IDT electrode are made patterns continuous (as if extended) from the input side tapered IDT electrode and the output side tapered IDT electrode respectively. The areas between the input side tapered IDT electrode, the output side tapered IDT electrode and the short grating electrode are set in a manner that the cycle unit ? which is a repeating unit of the electrode fingers is continued without breaking.

Abstract: A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.

Abstract: A surface acoustic wave resonator is constructed such that cross widths of an IDT electrode are weighted so that the cross widths are reduced as they move outward in the surface acoustic wave propagation direction, an inner edge of a first bus bar includes inclined portions that are inclined so that the inner edge is spaced a predetermined distance away from an envelope portion adjacent to the first bus bar, an inner edge of a second bus bar includes inclined portions that are inclined so that the inner edge is spaced a predetermined distance away from an envelope portion adjacent to the second bus bar, and the sum N of the numbers of electrode fingers and dummy electrodes that are crossed by a straight line extending from the tip of at least one of the electrode fingers in the surface acoustic wave propagation direction is at least N.

Abstract: In an acoustic wave filter device, first and second acoustic wave filter elements are connected in parallel to an unbalance terminal. Of first to third IDTs, the second and third IDTs are connected to a first balance terminal. Of fourth to sixth IDTs, the fifth and sixth IDTs are connected to a second balance terminal. The first ground terminal is arranged at a position close to the side of the unbalance terminal and shifted to the side of the first acoustic wave filter element. The third ground terminal is arranged in a point-symmetric relationship relative to the first ground terminal with respect to a middle point between the first and second acoustic wave filter elements.

Abstract: An intelligent packaging system utilizing acoustic wave devices includes an electronic module, a SAW ID, various passive SAW sensors and a printed antenna. The passive SAW sensors include a SAW pressure sensor, a SAW temperature sensor and one or more SAW chemical sensors for monitoring physical parameters of a package content. The electronic module generally includes a printed large area distributed electrical circuit, an impedance transformer and a SAW transponder for realizing passive wireless monitoring of the structural integrity of the package. A separate power harvesting antenna and/or a separate dual band antenna can generate radio frequency (RF) power for biasing components associated with the electronic module.

Abstract: An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010.

Abstract: A high Q resonator device is disclosed. The device includes a substrate, a resonator tethered to the substrate by a tether, and an acoustic reflector etched into the substrate and positioned proximate the tether so as to reflect a substantial portion of planar acoustic energy received from the tether back into the tether.

Abstract: The electromagnetic energy transfer device includes a first resonator structure receiving energy from an external power supply. The first resonator structure has a first Q-factor. A second resonator structure is positioned distal from the first resonator structure, and supplies useful working power to an external load. The second resonator structure has a second Q-factor. The distance between the two resonators can be larger than the characteristic size of each resonator. Non-radiative energy transfer between the first resonator structure and the second resonator structure is mediated through coupling of their resonant-field evanescent tails.

Abstract: A filter includes a parallel resonator having first comb electrodes provided on a piezoelectric substrate and a first dielectric film that covers the first comb electrodes, and a series resonator having second comb electrodes provided on the piezoelectric substrate and a second dielectric film covers the second comb electrodes and is made of a material identical to that of the first dielectric film. The first dielectric film has a different thickness from that of the second dielectric film.

Abstract: A transversal filter operates using surface acoustic waves and has a piezoelectric substrate and an acoustic track that is arranged on the substrate and in which a first transducer and a second transducer are arranged. Each transducer has electrode fingers. A function, which characterizes the weighting of the overlap length of electrode fingers of different polarity in the second transducer, has a half main lobe and at least one side lobe. The amplitude of the lobes decreases monotonally in a direction that points to the first transducer.

Abstract: A driving circuit of a surface wave resonator (X1) is described; the resonator comprises a static capacitor (Co) and the driving circuit is adapted to supply a voltage (Vx) to the resonator. The driving circuit comprises reactive means (L3) adapted to resonate in combination with said static capacitor (Co) of the resonator at a predetermined frequency (Fo) in the initial driving period of the resonator at said voltage; the driving circuit comprises passive means (R3) adapted to determine oscillations at said predetermined frequency (Fo).

Abstract: A proposed spread spectrum signal receiver includes a radio front-end unit and a processing unit. The radio front-end unit, in turn, has an antenna, a digitizing circuit and a primary buffer unit. The antenna is adapted to receive radio signals (SHF) from a plurality of signal sources, and the digitizing circuit is adapted to downconvert and filter the received signals (SHF), and generate sample values (SBP-D) thereof. The primary buffer unit is adapted to temporarily store the sample values (SBP-D) from the digitizing circuit and allow the processing unit to read out a first set of stored sample values (SBP-D) contemporaneously with the storing of a second set of sample values (SBP-D) in the primary buffer unit. The processing unit is adapted to receive the sample values (SBP-D) from the primary buffer unit, and based thereon, produce position/time related data (DPT).

Abstract: A surface acoustic wave filter includes an acoustic track bounded by reflectors, at least a first input transducer and at least a second input transducer acoustically coupled to the acoustic track that are connected in parallel and connected to an asymmetric input port, at least two first output transducers acoustically coupled to the acoustic track that are connected in parallel and connected, to a first terminal of a symmetric output port and at least two second output transducers acoustically coupled to the acoustic track that are connected in parallel and connected to a second terminal of a symmetric output port. Each first output transducer in the acoustic track and corresponding second output transducers are side-by-side and are electrically connected in series via a first bus bar.

Abstract: The object of the present invention is to provide an elastic wave filter capable of suppressing deterioration of a pass band and realizing to downsize. In the elastic wave filter of the present invention provided with a circuit, to which elastic wave resonators of a first series arm, a second series arm and a parallel wave are connected, the first series arm and one out of the second series arm and the parallel arm are arranged in the lateral direction in a row to be adjacent to each other, and the other out of the second series arm and the parallel arm is disposed on the rear side of the row, and prescribed bus bars in the first series arm, the second series arm and the parallel arm are arranged on the common connection point side.

Abstract: The invention relates to a filter with a first partial filter (TF1), comprising a series resonator (S1) and at least two parallel resonators (P1, P2) that are arranged in respective parallel branches, and with a second partial filter (TF2) configured as a DMS filter. The filter also comprises a housing with a plurality of internal housing contacts (GKi) on a base plate that are connected to terminal areas on the substrate (SU) and external housing contacts (GKa), fewer than the internal contacts, that are connected to the internal housing contacts (GKi) via lines (DL1, DL2) guided within the base plate. At least two lines for connections to ground of the first parallel resonator (P1) and the second partial filter (TF2) are guided separately in or on the base plate and are connected to at least two different external housing contacts (E4, E2).

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract: A branching filter includes an antenna terminal, a transmission signal terminal, a reception signal terminal, a transmission filter element, and a reception filter element. At least one of the transmission filter element and the reception filter element includes a longitudinally coupled resonator filter element having first and second IDT electrodes arranged along a direction of propagation of an elastic wave. The first IDT electrode includes a first end connected to the antenna terminal. The second IDT electrode includes a first end connected to one of the transmission signal terminal and the reception signal terminal. The longitudinally coupled resonator filter element further includes an inductor connected in series between a second end of the first IDT electrode and a ground potential.

Abstract: To provide an elastic wave filter capable of obtaining steep attenuation at a high band side or a low band side in a pass band and having high selectivity.

Abstract: A surface acoustic wave filter comprised of a plurality of surface acoustic wave resonators having different resonance frequencies, the filter comprising a substrate made of a lithium niobate, comb electrodes (1201 and 1202) formed on the substrate, and a thin dielectric film covering the comb electrodes (1201 and 1202), wherein the surface acoustic wave resonator having a lower resonance frequency is formed to have a metallization ratio larger than a metallization ratio of the surface acoustic wave resonator having a higher resonance frequency, thereby providing the surface acoustic wave filter and an antenna duplexer featuring superior characteristics with insignificant ripples while suppressing spurious responses of the surface acoustic wave resonators.

Abstract: A surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in the upper limit mode of the surface acoustic wave stop band with the following relationships satisfied; ?=0°, 110°???140°, and 38°?|?|?44°, when the quartz substrate cut angles and the surface acoustic wave propagation direction are represented by Euler angles (?, ?, ?), and wherein the electrode thickness relative to wavelength set such that H/??0.1796?3?0.4303?2+0.2071?+0.0682, with the thickness of the IDT electrode defined as H, the width of an electrode IDT finger defined as d, the pitch between the electrode fingers of the IDT electrode as P, the wavelength of the surface acoustic wave as ?, and where ?=d/P.

Abstract: An oscillator or a sensor comprising a unit including two frequency determining elements each of which comprises at least one interdigital converter for acoustic surface waves and a back-coupling circuit comprising an amplifier, wherein the frequency determining elements are distinguished by a temperature dependence of a synchronous frequency.

Abstract: A component includes a filter having a first structure and a second structure. The component also includes a substrate on which the first and second structures are arranged. The first structure has an approximately uniform layer thickness and an approximately uniform composition. The second structure has an approximately uniform layer thickness and an approximately uniform composition. At least one of the layer thickness or composition of the first structure differs from the layer thickness or composition of the second structure.

Abstract: An acoustic wave device includes a piezoelectric substrate, a resonator having comb electrodes that are provided above the piezoelectric substrate and excite an acoustic wave, and a capacitor that is provided above the piezoelectric substrate and is connected in series or parallel with the resonator, the capacitor including electrodes that horizontally face each other above the piezoelectric substrate. The electrodes of the capacitor are further from the piezoelectric substrate than the comb electrodes of the resonator.

Abstract: A duplexer includes two surface acoustic wave (SAW) filters having different center frequencies; a phase matching circuit that matches phases of the two SAW filters; a package in which the SAW filters and the phase matching circuit are housed, the package being composed of multiple layers; and a line pattern provided between at least one of the SAW filters and at least one of a transmit terminal and a receive terminal of the duplexer. The line pattern runs on at least two of the multiple layers within a range defined by peripheral ground patterns provided in the package.

Abstract: In an acoustic wave filter device, first and second surface acoustic wave filter sections implemented by longitudinally coupled resonators are arranged on a piezoelectric substrate. The first and second surface acoustic wave filter sections include first to third interdigital transducers and fourth to sixth interdigital transducers, respectively, arranged in a direction of propagation of surface waves. The first, third, fourth, and sixth interdigital transducers are connected to an unbalanced terminal. The second and fifth interdigital transducers are connected to first and second balanced terminals, respectively. Each of the second and fifth interdigital transducers has first and second interdigital transducer segments divided in the direction of propagation of acoustic waves. The first and second interdigital transducer segments are connected in series with each other.

Abstract: A surface acoustic wave resonator has a piezoelectric substrate (11), an IDT (13) formed of a plurality of electrode fingers (12) disposed on piezoelectric substrate (11), and reflectors (14) disposed near the opposite ends of IDT (13). The IDT (13) has a gradation region where the electrode finger pitch of the plurality of electrode fingers (12) at the opposite ends is different from the electrode finger pitch near the center of the IDT (13). In this gradation region, the electrode finger pitches are sequentially varied in the range from the electrode finger at the farthest end that is one end of the gradation region to the electrode finger lying at the other end of the gradation region. The electrode finger pitch of the electrode fingers at the farthest end that is one end of the gradation region is set to be 1 through 5% smaller than the electrode finger pitch near the center of the IDT (13).

Abstract: A SAW filter comprises an IDT disposed on a piezo-electric substrate, wherein the IDT includes comb-shaped electrodes having a plurality of interdigital electrodes arranged in a propagation direction of surface acoustic waves and bus bars for connecting these interdigital electrodes, arranged in opposition, and the interdigital electrodes are crossed with one another. The IDT comprises one or more branch electrodes branched from the interdigital electrode and positioned in a non-overlap zone between an overlap zone at which the interdigital electrodes overlap and the bus bar, and the branch electrode includes a branch electrode body extending in a direction substantially orthogonal to the propagation direction of surface acoustic wave. The SAW filter can be applied to any of a longitudinally coupled multi-mode filter, a ladder type filter, a resonator, a filter having a resonator connected in series to a longitudinally coupled multi-mode filter, and the like.

Abstract: A resonator filter working with surface acoustic waves is disclosed. The transfer function of this filter features a phase rotation of at least 400° within a passband.

Abstract: An acoustic wave device includes a piezoelectric substrate, a first dielectric film formed on the piezoelectric substrate, and electrodes that are provided on the first dielectric film and excite an acoustic wave, the electrodes including electrode fingers. At least a part of the first dielectric film is cut out between adjacent electrode fingers among the electrode fingers.

Abstract: A surface acoustic wave (SAW) expander based transmitter and correlator based receiver comprises SAW devices that perform expander or correlator functions based on the types of signals inputted to the SAW devices. The SAW devices incorporate chirp with adaptive interference and programmable coding capabilities. The SAW devices and method of operating the devices allow the implementation of very low power radios that overcome problems with temperature drift, lithography constraints and interference and jamming suffered by prior art implementations.

Abstract: An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 ?m) and RF-CMOS (0.18 ?m) technologies are presented.

Abstract: A Q-factor of a resonator at a high frequency is improved. An insertion loss of a filter using such a resonator and steepness of the filter are improved. A plurality of surface acoustic wave resonators including an interdigital transducer and reflecting electrodes provided on both sides thereof are connected in parallel on a piezoelectric substrate. Resonance frequencies of the surface acoustic wave resonators are rendered equal among all the resonators connected in parallel. In this way, the Q-factor of the resonance can be improved. A surface acoustic wave filter using such surface acoustic wave resonators is formed in order to improve the insertion loss and the steepness.