Abstract: A micro-oscillator is provided. In an example, the micro-oscillator applied to a signal filter and the like, ground capacitance thereof is reduced to control the loss of signal output. An oscillator element having a beam facing lower electrodes and to be electrostatically driven is formed on a substrate, and a wire width W1 of a DC bias feeder wire connected to the beam is formed to be narrower than a width of the beam.

Abstract: There are many inventions described and illustrated herein, as well as many aspects and embodiments of those inventions. In one aspect, the present invention is directed to a resonator architecture including a plurality of in-plane vibration microelectromechanical resonators (for example, 2 or 4 resonators) that are mechanically coupled to provide, for example, a differential signal output. In one embodiment, the present invention includes four commonly shaped microelectromechanical tuning fork resonators (for example, tuning fork resonators having two or more rectangular-shaped or square-shaped tines). Each resonator is mechanically coupled to another resonator of the architecture. For example, each resonator of the architecture is mechanically coupled to another one of the resonators on one side or a corner of one of the sides. In this way, all of the resonators, when induced, vibrate at the same frequency.

Abstract: A resonator system wherein a plurality of resonators each including piezoelectric material are suspended relative to a substrate. An edge of each resonator is mechanically coupled to an edge of another resonator and the plurality of resonators expand and contract reaching resonance in response to an applied electric field.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical resonators having mechanical structures that include integrated heating and/or temperature sensing elements. In another aspect, the present invention is directed to fabricate, manufacture, provide and/or control microelectromechanical resonators having mechanical structures that are encapsulated using thin film or wafer level encapsulation techniques in a chamber, and including heating and/or temperature sensing elements disposed in the chamber, on the chamber and/or integrated within the mechanical structures. Other aspects of the inventions will be apparent from the detailed description and claims herein.

Abstract: There are many inventions described and illustrated herein. These inventions are directed to a method of fabricating a microelectromechanical resonator having an output frequency that may be adjusted, tuned, set, defined and/or selected whether before and/or after final packaging. In one aspect, the method of the present invention adjusts, tunes, sets, defines and/or selects the frequency of the microelectromechanical resonator by changing and/or removing material from the mechanical structure of the resonator by resistively heating (in a selective or non-selective manner) one or more elements and/or beams of the mechanical structure (for example, the moveable or expandable electrodes and/or frequency adjustment structures).

Abstract: Disclosed is a micromachine as a high-frequency filter which includes a high Q value and is suitable for higher frequency bands. The micromachine (1) includes an output electrode (7) formed on a substrate (5), an interlayer insulating film (9) which covers the substrate (5) and includes an opening (9a) whose bottom is the output electrode (7), and a beltlike resonator electrode (11) so formed on the interlayer insulating film (9) as to traverse above the space (A) in the opening (9a), with the resonator electrode (11) being concave toward the opening (9a) along the side wall of the opening (9a).

Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

Abstract: Nanofibrous articles can be manufactured by a process that includes preparation of a surface of a substrate to provide an adhesion mechanism for securing the nanofibers to the surface. The nanofibers can be dispersed in an area near the substrate for the purpose of being adhered to the surface. If an ordered arrangement of nanofibers is required, an electric field can be provided in the area where the nanofibers are dispersed to selectively control an ordering of the nanofibers as they are adhered to the surface by the adhesion mechanism.

Abstract: There are many inventions described and illustrated herein. These inventions are directed to a method of fabricating a microelectromechanical resonator having an output frequency that may be adjusted, tuned, set, defined and/or selected whether before and/or after final packaging. In one aspect, the method of the present invention adjusts, tunes, sets, defines and/or selects the frequency of the microelectromechanical resonator by changing and/or removing material from the mechanical structure of the resonator by resistively heating (in a selective or non-selective manner) one or more elements and/or beams of the mechanical structure (for example, the moveable or expandable electrodes and/or frequency adjustment structures).

Abstract: An electrically-coupled micro-electro-mechanical system (MEMS) filter system and method are disclosed. In one embodiment, the MEMS filter system comprises a first microelectromechanical system (MEMS) resonator comprising a first resonating element, a second MEMS resonator comprising a second resonating element, the sescond resonating element closely spaced and mechanically separate from the first resonating element, wherein the first MEMS resonator is coupled to the second MEMS resonator through the electrostatic force acting between resonating portions of the MEMS resonators, and additional MEMS resonators electrically coupled to the first MEMS resonator, the second MEMS resonator, or the first and second MEMS resonators.

Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical resonators having mechanical structures that include integrated heating and/or temperature sensing elements. In another aspect, the present invention is directed to fabricate, manufacture, provide and/or control microelectromechanical resonators having mechanical structures that are encapsulated using thin film or wafer level encapsulation techniques in a chamber, and including heating and/or temperature sensing elements disposed in the chamber, on the chamber and/or integrated within the mechanical structures. Other aspects of the inventions will be apparent from the detailed description and claims herein.

Abstract: A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

Abstract: A compact high-performance mechanical vibration filter which deals with high frequency band signals. Microcolumn beams as minute mechanical vibrators are used to increase a mechanical resonance frequency. The plural microcolumn beams are arranged in an array and a common detection electrode surrounds each microcolumn beam with prescribed gaps between them, thereby preventing an output signal from becoming weak. When some of the mechanical vibrators are restrained from vibrating, it is possible to monitor and remove a noise component generated in the output signal by direct electromagnetic coupling of an input signal.

Abstract: Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

Abstract: A MEMS resonater employs a bulk longitudinal resonating mass supported by opposing tethers above a substrate with primary capacitive plates spaced from end surfaces of the resonating mass and supported on the substrate. Any number of secondary capacitive plates can be spaced from side surfaces of the resonating mass for detecting transverse vibrations. The secondary capacitive plates can be shaped to conform to the mode of the transverse vibration. The sensor is readily fabricated using a two-mask self-aligned process, or a one-mask self-aligned process with timed etch.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. A method and subsystem are provided for processing RF signals utilizing a plurality of vibrating micromechanical devices typically in the form of an IF mixer-filter and an RF channel selector or an image-reject RF filter. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Also, such methods and circuits can eliminate the need for a low noise amplifier in a receiver or transceiver subsystem. Consequently, the present invention relies on the use of a large number of micromechanical links in SSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: An electromechanical resonator includes a substrate (150, 450), an anchor (110, 510, 810) coupled to the substrate, a beam (120, 620, 1020, 1120, 1220, 1420) coupled to the anchor and suspended over the substrate, and a drive electrode (130, 435, 630, 930, 933, 935, 1030, 1035, 1130, 1135, 1435) coupled to the substrate and separated from the beam by a gap (140, 445, 640, 1040, 1045, 1140, 1145, 1445). The beam has a first surface (321, 621, 1021, 1121), a second surface (322, 622), and a third surface (323, 623, 1023, 1123, 1223, 1423). The first surface defines a width and a height, the second surface defines the height and a length, and the third surface defines the length and the width. The width, height, and length are substantially mutually perpendicular, and the beam resonates substantially only in compression mode and substantially only along an axis defined by the length.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.

Abstract: An electric signal fed into a line generates electric field in response to its frequency, and a resonator placed closely to the line and in a substantially vacuum condition not higher than 100 pascal is excited by electrostatic force of the electric field and vibrates. Detecting means converts mechanical vibrations of the resonator into a signal in another form than the electric signal, then it detects the vibrations. The foregoing structure allows the resonator to be a micro-body and to process properly a high-frequency input signal of MHz or GHz band. A tight space between an input side and an output side does not permit an electric signal fed into the line to couple directly to the output side, and the resonator downsized to a micro-body is not subject to viscosity of air.

Abstract: An electronic part such as a dielectric duplexer or filter is provided which comprises a dielectric ceramic block having a pair of opposite first and second side surfaces and an end surface meeting the first and second side surfaces nearly at right angles, an extension-electrode forming notch formed in the end surface so as to have an open end at the first side surface, a dummy electrode-forming notch formed in the end surface so as to have an open end at the second surface, the extension electrode-forming notch and the dummy electrode-forming notch corresponding in shape and position when observed in the direction in which the first and second side surfaces are opposed, an extension electrode formed in the extension electrode-forming notch, and a dummy electrode formed in the dummy electrode-forming notch. A method of forming an electrode of such an electronic part is also provided.

Abstract: A method for producing a layer with a locally adapted or predefined layer thickness profile that can be used for to selectively set the natural frequencies of piezoelectric resonant circuits and/or the impedance of other circuit elements. A layer is applied to a substrate, then measured to determine a difference between the initial layer thickness and the predefined layer thickness profile. An ion beam is then used to etch (mill) the layer until it achieves the predefined layer thickness profile.

Abstract: A tunable nanomechanical oscillator device and system is provided. The nanomechanical oscillator device comprising at least one nanoresonator, such as a suspended nanotube, designed such that injecting charge density into the tube (e.g. by applying a capacitively-cuopled voltage bias) changes the resonant frequency of the nanotube, and where exposing the resonator to an RF bias induces oscillitory movement in the suspended portion of the nanotube, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing an oriented nanoscale resonator structure with integrated electrodes is also provided.

Abstract: A MEMS resonator employs a bulk longitudinal resonating mass supported by opposing tethers above a substrate with primary capacitive plates spaced from end surfaces of the resonating mass and supported on the substrate. Any number of secondary capacitive plates can be spaced from side surfaces of the resonating mass for detecting transverse vibrations. The secondary capacitive plates can be shaped to conform to the mode of the transverse vibration. The resonator is readily fabricated using a two-mask self-aligned process, or a one-mask self-aligned process with timed etch.

Abstract: A tunable nanomechanical resonator system comprising an array of nanofeatures, such as nanotubes, where the nanofeatures are in signal communication with means for inducing a difference in charge density in the nanofeature such that the mechanical resonant frequency of the nanofeature can be tuned, and where the nanofeature is in signal communication with a waveguide or other RF bias conduit such that an RF signal having a frequency corresponding to the mechanical resonant frequency of the array will couple to the array thereby inducing resonant motion in the array of nanofeatures, and subsequently coupling to an output waveguide, forming a nanoscale RF filter is provided. A method of producing a nanoscale RF filter structure controllably positioned and oriented with a waveguide and integrated electrodes is also provided.

Abstract: A resonator includes a member with an embedded charge, at least one input electrode, at least one output electrode, and at least one common electrode. The input and output electrodes are spaced from and on substantially opposing sides of the member from the common electrode. At least one of the member and the input and output electrodes is movable with respect to the other.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. Apparatus is provided for filtering signals utilizing vibrating micromechanical resonators. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: Torsional hinge support beams (104, 106, 108, 110, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500) that are corrugated, perforated and/or have non-uniform width are provided. The support beams are useful in flexural beam resonators (100, 1600), in which they serve to support the main flexural mode-vibrating beam (102, 1602). The support beams have phase lengths equal to an odd multiple of &pgr;/2, preferably the phase lengths are about equal to &pgr;/2 at the operating frequency of the resonators. Owing to the corrugations, the lengths of the support beams are shorter than comparable solid straight edge support beams. The short lengths of the support beams reduce the overall area occupied by the resonators and allow higher bias voltage to be employed in order to obtain greater electromechanical coupling.

Abstract: MEMS resonators (100, 400, 500) include a source of material that is capable of sublimation (128, 130, 406, 408, 502, 504). Conductive pathways (132, 134, 402, 404, 502, 504) to the material are used to supply current of ohmically heat the material in order to cause the material to sublimate. The material may be located either on or in close proximity to a resonant member (114) of the resonator. By sublimating the material, the mass of the resonant member is either increased or decreased thereby altering the resonant frequency of the resonant member. The resonant member is preferably located in a recess that is capped by a cap (202) forming a vacuum enclosure, and the material capable of sublimation preferably comprises a material that serves to getter any residual gases in the vacuum enclosure.

Abstract: A longitudinal mode resonator that includes a substrate and a bar that is suspended relative to the substrate. The bar is suspended such that it is free to expand and contract longitudinally in response to the application of an electric field across its thickness. The expansion and contraction of the bar achieves resonance in response to the field having a frequency substantially equal to the fundamental frequency of the bar.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. For example, a method and apparatus for selecting at least one desired channel in an RF receiver subsystem is shown. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI to VLSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: A tunable resonator is provided. The resonator includes a housing having a cavity. A resonator body is disposed adjacent to a first surface within the cavity. A gap is formed between the resonator body and the first surface. The resonator is tuned by controlling the size of the gap.

Abstract: A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. For example, a method and apparatus for selecting at least one desired channel in an RF receiver subsystem is shown. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI to VLSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.

Abstract: Microelectromechanical resonators that can be fabricated on a semiconductor die by processes normally used in fabricating microelectronics (e.g., CMOS) circuits are provided. The resonators comprises at least two vibratable members that are closely spaced relative to a wavelength associated with their vibrating frequency, and driven to vibrate one-half a vibration period out of phase with each other, i.e. to mirror each others motion. Driving the vibratable members as stated leads to destructive interference effects that suppress leakage of acoustic energy from the vibratable members into the die, and improve the Q-factor of the resonator. Vibratable members in the form of vibratable plates that are formed by deep anisotropic etching one or more trenches in the die are disclosed. Embodiments in which two sets of vibratable plates are spaced by ½ the aforementioned wavelength to further suppress acoustic energy leakage, and improve the Q-factor of the resonator are disclosed.

Abstract: An electromechanical structure such as a MEMS resonator formed in the surface of a semiconductor body. A flexible beam containing a conductive plate is integrally formed in a cavity in the surface of a semiconductor body. A second conductive plate is parallel to the first along a sidewall of the cavity. A voltage applied across the first and second conductive plates forces the flexible beam to vibrate horizontally. A cap layer seals the cavity and maintains a vacuum in the cavity. The structure is smaller than the wavelength of the RF signal generated therefrom and, therefore, virtually shielded.

Abstract: A method for forming a microelectromechanical (MEMS) resonator is disclosed. The method comprises first manufacturing a plurality of resonator structures. Each of the resonator structures differ from the others in a systematic manner, such as the length of the resonator structure. The resonance frequency of each of the resonator structures is determined. Then, a desired resonator structure is selected based upon the resonance frequency of the desired resonator structure.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. A method and subsystem are provided for processing RF signals utilizing a plurality of vibrating micromechanical devices typically in the form of an IF mixer-filter and an RF channel selector or an image-reject RF filter. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Also, such methods and circuits can eliminate the need for a low noise amplifier in a receiver or transceiver subsystem. Consequently, the present invention relies on the use of a large number of micromechanical links in SSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. Apparatus is provided for selecting at least one desired passband or channel in an RF transmitter subsystem utilizing a bank of vibrating micromechanical devices. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: Torsional hinge support beams (104, 106, 108, 110, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500) that are corrugated, perforated and/or have non-uniform width are provided. The support beams are useful in flexural beam resonators (100, 1600), in which they serve to support the main flexural mode-vibrating beam (102, 1602). The support beams have phase lengths equal to an odd multiple of &pgr;/2, preferably the phase lengths are about equal to &pgr;/2 at the operating frequency of the resonators. Owing to the corrugations, the lengths of the support beams are shorter than comparable solid straight edge support beams. The short lengths of the support beams reduce the overall area occupied by the resonators and allow higher bias voltage to be employed in order to obtain greater electromechanical coupling.

Abstract: A resonator includes a member with an embedded charge, at least one input electrode, at least one output electrode, and at least one common electrode. The input and output electrodes are spaced from and on substantially opposing sides of the member from the common electrode. At least one of the member and the input and output electrodes is movable with respect to the other.

Abstract: An LC filter circuit includes first and second LC-trap capacitor conductors, respectively, that are opposed to third and fourth LC-trap capacitor conductors with an insulating sheet therebetween to define first and second LC trap capacitors, respectively. A portion of a first LC resonator inductor and the first LC trap capacitor define an input-side LC trap circuit, and a portion of a second LC resonator inductor and the second LC trap capacitor define an output-side LC trap circuit.

Abstract: Electromechanical resonating devices such as MEMS resonators are provided in semiconductor structures and devices having high-quality monocrystalline semiconductor layers formed by utilizing compliant substrates. The semiconductor layer is patternwise etched to define a vibrational mode resonator member with one or more supports mechanically coupled to the member. A portion beneath the member is etched to provide clearance for vibrational mode operation of the resonating member. The semiconductor layer is selectively doped to define one or more conductive pathways to the resonating member.

Abstract: A method for forming a microelectromechanical (MEMS) resonator is disclosed. The method comprises first manufacturing a plurality of resonator structures. Each of the resonator structures differ from the others in a systematic manner, such as the length of the resonator structure. The resonance frequency of each of the resonator structures is determined. Then, a desired resonator structure is selected based upon the resonance frequency of the desired resonator structure.

Abstract: A filter for electric signals has a substrate, a vibrating body capable of vibrating with at least two antipodes deflected in phase opposition relative to the substrate and has electrodes connected to a signal input and a signal output for electric excitation and for detection of the vibration of the vibrating body. The electrodes for detecting the vibration, each assigned to antipodes deflected in phase opposition, are connected to two separate terminals of the signal output.

Abstract: A tunable nanomechanical oscillator device and system is provided. The nanomechanical oscillator device comprising at least one nanoresonator, such as a suspended nanotube, designed such that injecting charge density into the tube (e.g. by applying a capacitively-cuopled voltage bias) changes the resonant frequency of the nanotube, and where exposing the resonator to an RF bias induces oscillitory movement in the suspended portion of the nanotube, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing an oriented nanoscale resonator structure with integrated electrodes is also provided.

Abstract: A method for cladding two or three sides of a top conductor for a magnetic memory device in ferromagnetic material includes forming a trench with side walls in a coating layer above the memory device. A first ferromagnetic material is deposited along the side walls of the trench. Any ferromagnetic material in a bottom of the trench can be removed. A conductor material is deposited in the trench over the memory device. A second ferromagnetic material is deposited over the conductor material in the trench to form a cladding of the ferromagnetic material around three side of the conductor.

Abstract: A first type of MEMS resonator adapted to be fabricated on a SOI wafer is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Overtone versions of the resonators that provide for differential input and output signal coupling are described. In particular resonators suited for differential coupling that are physically symmetric as judged from center points, and support anti-symmetric vibration modes are provided. Such resonators are robust against signal noise caused by jarring. The MEMS resonators taught by the present invention are suitable for replacing crystal oscillators, and allowing oscillators to be integrated on a semiconductor chip. An oscillator using the MEMS resonator is also provided.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.