Mechanically Adjustable Or Variable Patents (Class 338/29)
  • Patent number: 7441322
    Abstract: A magnetic detection apparatus can be improved in its product yield. The magnetic detection apparatus includes a resin compact having a the magnet arranged in opposition to an object to be detected for generating a magnetic field, an IC chip with a magnetic detection part built therein for detecting a change in the magnetic field in accordance with movement of the object to be detected, and an IC package in which a lead frame having the IC chip installed thereon is sealed with a resin. A method for manufacturing such a magnetic detection apparatus includes a signal adjustment step for adjusting a signal generated from the magnetic detection part in a state in which the magnetic field is applied to the magnetic detection part to correct a deviation of the signal of the magnetic detection part generated in accordance with a relative displacement between the magnetic detection part and the magnet.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: October 28, 2008
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Izuru Shinjo, Shigeki Tsujii, Yoshinori Tatenuma, Hiroshi Sakanoue, Masahiro Yokotani, Ryouichi Sasahara
  • Patent number: 7230517
    Abstract: A system and method is disclosed for using plasma to adjust the resistance of a thin film resistor. In one advantageous embodiment of the invention, the resistance of a thin film resistor is increased to cause the thin film resistor to have a desired higher value of resistance. The thin film resistor is formed having an initial value of resistance that is less than the desired value of resistance. Then the thin film resistor is placed in an oxidizing atmosphere. A surface of the thin film resistor is then oxidized to increase the initial value of resistance to the desired value of resistance. The amount of the increase in resistance may be selected by selecting the temperature of the oxidizing atmosphere.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: June 12, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Richard Wendell Foote, Jr., Tom Bold, Rodney Hill, Abhay Ramrao Deshmukh
  • Patent number: 7117585
    Abstract: A magnetic detection apparatus can be improved in its product yield. The magnetic detection apparatus includes a resin compact having a the magnet arranged in opposition to an object to be detected for generating a magnetic field, an IC chip with a magnetic detection part built therein for detecting a change in the magnetic field in accordance with movement of the object to be detected, and an IC package in which a lead frame having the IC chip installed thereon is sealed with a resin. A method for manufacturing such a magnetic detection apparatus includes a signal adjustment step for adjusting a signal generated from the magnetic detection part in a state in which the magnetic field is applied to the magnetic detection part to correct a deviation of the signal of the magnetic detection part generated in accordance with a relative displacement between the magnetic detection part and the magnet.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: October 10, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Izuru Shinjo, Shigeki Tsujii, Yoshinori Tatenuma, Hiroshi Sakanoue, Masahiro Yokotani, Ryouichi Sasahara
  • Patent number: 6348852
    Abstract: The PTC thermistor chip of the present invention comprises a conductive polymer having PTC properties, a first outer electrode, a second outer layer electrode, not less than one inner electrode sandwiched between the conductive polymer, a first electrode electrically directly coupled with the first outer electrode, and a second electrode disposed electrically independently from the first electrode. When counting from one of the inner electrodes closest to the first outer layer electrode, and defining the inner layer electrode in a “n”th position as the “n”th inner electrode, the odd-numbered inner layer electrodes are directly coupled with the second electrode and the even-numbered inner layer electrodes, with the first electrode. In this PTC thermistor, the cross sections where the odd-numbered and even numbered inner electrodes are respectively in contact with the second and first electrodes are thicker than the other sections.
    Type: Grant
    Filed: June 7, 2001
    Date of Patent: February 19, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Junji Kojima, Kiyoshi Ikeuchi, Takashi Ikeda, Koichi Morimoto, Toshiyuki Iwao
  • Patent number: 5781098
    Abstract: A temperature sensor includes a temperature sensing section having a thermistor element 11 and connecting ends 121 and 122, an outside connection circuit having detecting resistors 211 to 213 and connecting ends 221 to 225, and a switching element 30 for obtaining a selective connection between the first ends 121 and 122 and the second ends 221 to 225. The switching element 30 is for example constructed by a connector 31 and a shunt wire 32. The second switching element 30 can, as an alternative, be constructed by a pair of connectors, which provide different mutual positions, one of which is selected to obtain a connection. As a second feature, a connector, which is separate from the thermistor element, is provided with adjusting resistors which are in series and in parallel connected to the thermistor element.
    Type: Grant
    Filed: February 22, 1996
    Date of Patent: July 14, 1998
    Assignee: Nippondenso Co., Ltd.
    Inventor: Masamichi Shibata