Abstract: A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.

Abstract: There are provided a touchpad using resistive electro-conductive fibers and an input device having the same, which can be used for controlling a personal terminal such as a computer by receiving a user's input using a signal representing a motion of the user detected by the resistive electro-conductive fiber in contact with the user's body part such as a finger, instead of using a separate input device such as a mouse. The touchpad includes a plurality of motion detectors and a signal analyzer. The motion detectors each include a resistive electro-conductive fiber having a resistance value varied according to a change in length caused by contact with a human body part, and a signal generator outputting a signal corresponding to the varied resistance value. The signal analyzer analyzes the signal from each of the motion detectors, and generates a motion signal representing a motion of the human body part in contact with the touchpad.

Abstract: A system for testing a push-button switch is provided. The system for testing a push-button switch includes a switch test device. The switch test device has a flexible tab attached to a pushing member at an end of the flexible tab. A sensor is attached to the flexible tab. The sensor generates a signal that changes relative to a deformation of the flexible tab. A data collection system is connected to the switch test device and receives signals from the sensor.

Abstract: The invention provides a sensor comprising a frame, a plurality of beams extending inwardly from said frame, a weight portion supported by the beams, a piezoelectric-resistor formed on each beam and an insulating layer that covers the piezoelectric-resistor. The piezoelectric-resistor has at least one bend, and a metal wiring is located on the insulting layer positioned at the bend. The metal wiring is connected to the bend via at least two contact holes formed in the insulating layer. Contact holes are formed in the insulating layer positioned at both ends of the piezoelectric-resistor, and a bridge circuit wiring is connected to the piezoelectric-resistor via the contact holes.

Abstract: A bend-detecting (bending) sensor is provided, including a flexible substrate, at least a pair of electrode patterns spaced apart from each other provided on the flexible substrate, and a paste layer containing conductive particles. The paste layer is coated onto the flexible substrate where the electrode patterns are formed, such that when the flexible substrate is bent, the density of the conductive particles between the electrode patterns changes and an electric resistance between the electrode patterns also changes, thereby sensing deformation of the flexible substrate, and eventually, a target to which the flexible display element or the flexible substrate is attached. When the bending sensor is applied to the flexible display device, the electrode patterns and the paste layer may be formed on the flexible substrate which is to form the flexible display element, thus forming a bending sensing structure with a thickness of the flexible display element or less.

Abstract: A pressure transducer comprising a corrosion resistant metal diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a piezoresistive silicon-on-insulator sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.

Abstract: A tunable impedance load bearing structure includes a support comprising an active material configured for supporting a load, wherein the active material undergoes a change in a property upon exposure to an activating condition, wherein the change in the property is effective to change an impedance characteristic of the support.

Abstract: A miniature pressure transducer is disclosed which is able to operate at high temperatures. The pressure transducer is provided on a substrate comprising an elongate silicon base portion with one or more contact areas formed at one end and a diaphragm formed at the opposite distal end. A plurality of piezoresistive elements are provided on the diaphragm, preferably in a Wheatstone Bridge arrangement, and connected to the contact areas using interconnects. The diaphragm extends across substantially the entire effective width of the elongate base portion providing a compact width while still maintaining a sensitive pressure sensing capability.

Abstract: A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques.

Abstract: A physical quantity sensor device (10) having a structure in which a stress-sensitive body (1) of which the electric characteristics vary depending upon the application of stress and an insulator (2) having electric insulation are formed being closely adhered together, wherein the stress-sensitive body (1) comprises a thin glass film containing an electrically conductive element that is solidly dissolved therein as atoms, a method of manufacturing the physical quantity sensor device, a piezo-resistive film comprising a thin glass film containing ruthenium that is solidly dissolved therein as atoms, and a method of manufacturing the piezo-resistive film.

Abstract: A push-button switch test device having a flexible tab fixedly attached to a pushing member. The flexible tab is made of a flexible material and includes a deformation sensitive resistor mounted on a surface. The push-button switch test device may be used to test a push-button by imposing a known force on the flexible tab while receiving a signal level across the deformation sensitive resistor. As the known force pushes on the flexible tab, the signal level indicates when the push-button has engaged. The force may then be reversed to permit sensing of the disengagement of the switch. Configurations of a plurality of push-button switch test devices may be arranged in a test frame that mirrors a configuration of push-button switches.

Abstract: The load cell includes a strain generating body having a strain generated portion, and a strain detection element provided on a surface of the strain generating body in a portion corresponding to the strain generated portion and having an inversion portion and a straight portion. A creep characteristic is adjusted by a thickness of the strain generated portion in a portion corresponding to the inversion portion.

Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Abstract: A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques.

Abstract: A damage sensor, for example a crack gauge, a method of providing the same, and a method of sensing damage using the same, are described. The damage sensor comprises at least one direct write resistive element applied to an area of a substrate by a direct write process. Conductive tracks may be connected along two separated portions of the perimeter of the area of the direct write resistive element. The damage sensor may comprise plural direct write resistive elements, for example rectangular-shaped elements, each extending between and connected to two conducting tracks. In a further damage sensor, plural annular resistive elements are positioned in an annular arrangement with respect to each other. In all the damage sensors, the resistive elements may be applied around a hole in a substrate, or extending over a bonded edge between two substrates.

Abstract: A sensor array for a pressure transducer having a diaphragm with an active region, and capable of deflecting when a force is applied to the diaphragm. The sensor array disposed on a single substrate, the substrate secured to the diaphragm. The sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm. The sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors dielectrically isolated from the substrate.

Abstract: A pressure sensor assembly configured for use with a catheter. In one illustrative embodiment, the pressure sensor assembly may include a multi-layer co-fired ceramic (MLCC) package. The MLCC package may include two or more ceramic layers that are co-fired together, with a cavity defined by at least some of the ceramic layers. At least one internal bond pad is provided within the cavity, and at least one external connection point is provided on the MLCC package exterior. A sensor, such as a pressure sensor, may be positioned and attached within the cavity. The sensor may be electrically connected to at least one of the internal bond pads. In some cases, a sealant may be used to encapsulate the sensor within the cavity. Once fabricated, the MLCC sensor assembly may be provided in a sensor lumen of a catheter.

Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

Abstract: A plate member 101 having flexible portions; plate members 102 to 104 having openings corresponding to the flexible portions of the plate member 101; a plate member 201 having flexible portions; and plate members 202 to 204 having openings corresponding to the flexible portions of the plate member 201 are formed by etching. The plate members 101 to 104 and 201 to 204 are bonded by diffusion bonding process to make first and second flanges 100 and 200. Interconnecting shafts are formed by cutting. The first and second flanges 100 and 200 and the interconnecting shafts are bonded by diffusion bonding process to make a strain generation unit 5. Strain gauges are attached to the lower face of the strain generation unit 5. A stain gauge type sensor 1 is thus made.

Abstract: A push-button switch test device having a flexible tab fixedly attached to a pushing member. The flexible tab is made of a flexible material and includes a deformation sensitive resistor mounted on a surface. The push-button switch test device may be used to test a push-button by imposing a known force on the flexible tab while receiving a signal level across the deformation sensitive resistor. As the known force pushes on the flexible tab, the signal level indicates when the push-button has engaged. The force may then be reversed to permit sensing of the disengagement of the switch. Configurations of a plurality of push-button switch test devices may be arranged in a test frame that mirrors a configuration of push-button switches.

Abstract: A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.

Abstract: A force sensing resistor (FSR) includes a substrate having separated electrically conductive traces and another substrate having a resistive layer in which the substrates are subjected to a biasing force such that the substrates contact one another with the resistive layer electrically connecting the traces with a resistance inversely dependent on the biasing force. Upon an external force applied towards a substrate, the substrates contact one another with a total force which is the sum of the forces with the resistive layer electrically connecting the traces with a resistance inversely dependent on the total force. An FSR output which is a function of the resistance is measured. Whether a change in magnitude of the FSR output during a time interval is greater than a threshold is determined. A touch applied on the FSR is detected during the time interval if the change is greater than the threshold.

Abstract: The invention provides a strain gauge which includes a fabric base and at least one conductive yarn. In addition, the fabric base is weaved with a plurality of non-conductive yarns, and the fabric base thereon defines a sensing direction. Moreover, each of the conductive yarn is gimped by a textile process with one of the non-conductive yarns and is woven through the fabric base along the sensing direction. Furthermore, the at least one conductive yarn is capable of being applied by an electric power; when an external force acts on the fabric base, the geometrical property of the at least one conductive yarn alters so that a change of an electric property associated with the applied electric power is sensed to indicate an elongation of said strain gauge applied by the external force along the sensing direction.

Abstract: The load cell includes a strain generating body having a strain generated portion, and a strain detection element provided on a surface of the strain generating body in a portion corresponding to the strain generated portion and having an inversion portion and a straight portion. A creep characteristic is adjusted by a thickness of the strain generated portion in a portion corresponding to the inversion portion.

Abstract: A pressure transducer includes a diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.

Abstract: The strain gauge for measuring large strains has metallic foil pattern sections including a gauge element pattern section, gauge tab pattern sections and connecting pattern sections attached to a gauge base. The gauge base having the metallic foil pattern sections attached and connected with the bases of gauge leads is almost entirely covered on the surface with a laminating film, and the tip of the laminating film is extended by a predetermined length from the tip end of the gauge base, to form a protruding portion. The protruding portion functions to prevent the separation of the gauge base from an object to be measured.

Abstract: The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.

Abstract: In a monolithic electronic component in which a resistive element is incorporated by forming a resistor film on a terminal electrode, a plating film can be formed on the terminal electrode having the resistor film via electroplating in an efficient manner and with a uniform film thickness. In order to form the terminal electrode, the resistor film is disposed directly on the surface of the component body, and a conductive resin film having a relatively low volume resistivity is disposed over the resistor film. The conductive resin film is preferably adapted to have a specific resistance of less than about 1×10?4 ?·m, on which a plating film having a uniform film thickness can be formed efficiently via electroplating.

Abstract: The present invention generally relates to methods to provide electrospun polymer/nanoparticle composite-fiber structures for use as lightweight, compliant, porous strain sensors for non-cyclic strain sensing. In one embodiment, the fibers in the nanocomposites comprise, for example, poly(?-caprolactone) (PCL) dielectric polymer matrix with embedded electrically conductive carbon black (CB) nanoparticles. In another embodiment, the composite-fiber structures of the present invention contain at least about 7 weight percent or more of CB and are electrically conducting in the as-spun, un-deformed state, and are thus called conductive polymer composites (CPC). In still another embodiment, the electrical resistance of a nanocomposite structure according to the invention increases with strain, and at sufficiently high strains the structure is rendered non-conductive.

Abstract: The piezo-resistance type triaxial acceleration sensor includes a frame section, a mass section disposed in the frame section, beam elements which flexibly support the mass section, and piezo-resistors for X, Y and Z axes of the frame section, formed on the beam elements. The length of the Z-axis piezo-resistors is longer than the length of the X-axis piezo-resistors and the Y-axis piezo-resistors, so as to decrease the sensitivity.

Abstract: This invention relates to a resonant device with detection in the piezo-resistive plane made using surface technologies on a bulk, which comprises a resonator connected to this bulk by at least one embedded portion, means of exciting this resonator and detection means comprising at least one suspended beam type strain gauge made from piezo-resistive material, in which each strain gauge has a common plane with the resonator, and is connected to this resonator at a point situated outside of this at least one embedded portion to increase the stress observed by this strain gauge.

Abstract: There is provided a load sensor that can make accurate measurement without being affected by unnecessary external force and moreover has a simple construction. The load sensor includes a strain generating element (3) which is formed integrally with an installation section (9) attached to an object to be measured and is displaced according to the weight or load of the object to be measured, a sensor plate (13) which is connected to the strain generating element (3) and is distorted according to the displacement of the strain generating element (3), and a strain gauge attached to the sensor plate (13). The strain generating element (3) is placed on one end side of the installation section (9) with the center thereof aligned with the axis of the installation section (9). On the inside of the strain generating element, a reception section (5) for housing the sensor plate is formed, and the sensor plate (13) is housed in the reception section while being held by a holder (100).

Abstract: A load sensor includes a substrate, a glass layer provided on the substrate, a wiring provided on the glass layer, an adjusting layer provided on the glass layer, and a strain-sensitive resistor element provided on the adjusting layer and connected to the wiring. A thermal expansion coefficient of the adjusting layer is closer to that of the strain-sensitive resistor element than that of the glass layer. In this load sensor, a stress remaining inside the resistor element is reduced, and the change over time of the resistance of the element is accordingly suppressed. Therefore, a single kind of the resistor element can be formed on substrates having respective thermal expansion coefficients, shapes, and thicknesses, thereby providing various load sensors having respective specifications.

Abstract: A strain sensor is provided including a substrate, and a sensing layer, including cobalt, provided on the substrate. A first electrode is coupled to the sensing layer, and a tunnel layer including aluminum oxide is provided on the sensing layer. In addition, a pinned layer, also including cobalt, is provided on the tunnel layer. An exchange biasing layer is provided on the pinned layer, and a second electrode is coupled to the exchange biasing layer. The strain sensor is configured such that, over a range of values of strain applied to the sensor, a resistance of the sensor is a linear function of the strain. A related method is also disclosed.

Abstract: An SOI substrate includes a thin diaphragm portion that is formed by removing a portion of the substrate from a rear surface side, and a thick outer frame portion that surrounds the diaphragm portion. A piezoresistive element that outputs an electrical signal in response to pressure is formed on the diaphragm portion, and an electrode that extracts the electrical signal from the piezoresistive element is formed on the outer frame portion. The electrode is disposed at a position on the outer frame portion that is separated by greater than or equal to 100 ?m from a boundary line between the diaphragm portion and the outer frame portion.

Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

Abstract: The piezo-resistance type triaxial acceleration sensor includes a frame section, a mass section disposed in the frame section, beam elements which flexibly support the mass section, and piezo-resistors for the X, Y and Z axes formed on the beam elements. The length of the Z-axis piezo-resistors is longer than the length of the X-axis piezo-resistors and the Y-axis piezo-resistors, so as to decrease the sensitivity.

Abstract: A system and method for a bi-directional deflectable resistor. The bi-directional deflectable resistor has a first layer of conductive material on a top surface of a substrate and a second layer of conductive material on a bottom surface of a substrate, each layer having a resistance that changes predictably when an electrical signal is applied thereto. The change of resistance of either the first layer of conductive material or the second layer of conductive material reflects an amount of deflection of the respective layer. Having two layers of conductive material allows for the measurement of deflection in all directions.

Abstract: A stress sensor in which the direction and magnitude of a stress being applied to a post bonded to or integrated with an insulating board can be grasped from variation in the resistance of resistor elements being stimulated by application of the stress while suppressing variation in the shape of each resistor. The resistor element comprises a resistor formed, by screen print, between a pair of electrodes for the resistor element, i.e. circuit pattern electrodes, arranged on the surface of the insulating board. The electrode is connected, through a conductor, with a board terminal part arranged at one end of the insulating board. The electrode and the conductor or a print accuracy adjusting member have a constant height from the surface of the insulating board. Arrangement of the conductor, electrode and print accuracy adjusting member is entirely identical or similar for the resistor elements in the vicinity thereof.

Abstract: The invention provides a strain gauge which includes a fabric base and at least one conductive yarn. In addition, the fabric base is weaved with a plurality of non-conductive yarns, and the fabric base thereon defines a sensing direction. Moreover, each of the conductive yarn is gimped by a textile process with one of the non-conductive yarns and is woven through the fabric base along the sensing direction. Furthermore, the at least one conductive yarn is capable of being applied by an electric power; when an external force acts on the fabric base, the geometrical property of the at least one conductive yarn alters so that a change of an electric property associated with the applied electric power is sensed to indicate an elongation of said strain gauge applied by the external force along the sensing direction.

Abstract: A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion/support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.

Abstract: A physical quantity sensing element according to the invention includes an insulating layer and a sensing layer. The sensing layer is configured to generate an electrical signal as a function of a physical quantity applied thereto and has a surface that includes a first and a second area. The first area is completely covered with the insulating layer so that the physical quantity is to be applied to both the insulating layer and the sensing layer through the first area; the second area is exposed to an application direction of the physical quantity without being covered with the insulating layer and being subject to application of the physical quantity. With such a structure, easy and reliable electrical connection of the physical quantity sensing element with external devices and circuits is ensured. In addition, several practical methods of fabricating the physical quantity sensing element according to the invention are also provided.

Abstract: A stress sensor in which the direction and magnitude of a stress being applied to a post (6) bonded to or integrated with the surface of an insulating board (3) can be grasped from variation in the resistance of a plurality of resistor elements (8) being stimulated by application of the stress while suppressing variation in the shape of each resistor (2). The resistor element (8) comprises a resistor (4) formed, by screen print, between a pair of electrodes for the resistor element, i.e. circuit pattern electrodes (1), arranged on the surface of the insulating board (3). The electrode is connected, through a conductor (9), with a board terminal part (5) arranged at one end of the insulating board (3). The electrode (1) and the conductor (9) or a print accuracy adjusting member (7) have a constant height from the surface of the insulating board (3).

Abstract: The present invention provides a strain gauge comprising a resistive layer. The resistive layer comprises metallic or semiconducting nanoparticles or aggregates thereof in which the nanoparticles or aggregates thereof are separated by insulating and/or semiconducting material.

Abstract: The invention relates to a strain-sensitive resistor, comprising a resistance layer arranged on a support element and an electromechanical transducer produced with this resistor. An increase in the electrical measured signal picked off across the resistor is achieved in a simple way by the support element (1) having a recess (7) on its surface (9) which, when the support element (1) is subjected to mechanical stress in at least one area of the surface (9) of the support element (1) in which the resistance layer (4) is positioned, produces a ratio between the two main strain directions (L, T) of the resistance layer (4) which differs in magnitude.

Abstract: A method of producing a strain sensitive resistor includes matching an area of a film insulating layer to a shape of a recess in a surface of a support element. The film insulating area is applied to the support element so that the area of the film matching the shape of the recess is congruent with the shape of the recess. A resistive layer comprising strain-sensitive resistors is applied to the film insulating layer and the film insulating layer and the resistive layer are applied to heat treatment.

Abstract: A mechanical-force sensor includes two piezoelectric vibrators which are arranged such that stresses in mutually opposite directions are applied thereto by a mechanical force such as an acceleration. A current-voltage converter and signal-summing circuit converts current signals that flow through the two piezoelectric vibrators into voltage signals. A voltage-amplifier and amplitude limiter circuit amplifies a sum signal of the two voltage signals, and provides a positive feedback of a voltage signal that is in phase with the current signals, thereby causing an oscillating operation. A phase difference-voltage converter circuit generates a voltage signal that is proportional to the phase difference between the voltage signals yielded by the conversion. An amplifier and filter circuit DC-amplifies the voltage signal and removes unwanted frequency components therefrom.

Abstract: A description is given of a passenger detector comprising a flexible support of insulating material, at least two electrode structures placed on said insulating substrate at a certain distance from each other, and a layer of semiconducting material placed above said electrode structures in an active zone of the detector. In conformity with the invention, said layer of semiconducting material has an internal resistance that varies with a deformation of said layer and said layer of semiconducting material is placed in intimate contact with said electrode structures.

Abstract: A method for creating a layout of at least a portion of a microelectromechanical system is disclosed. In one embodiment, a plurality of die are formed on a wafer. Each die includes a plurality of rows of a plurality of mirror assemblies, a plurality of off-chip electrical contacts, and an electrical trace bus that is disposed between adjacent pairs of rows. This electrical trace bus is electrically interconnected with mirror assemblies in at least one of the rows. A plurality of these die are formed on a wafer. A chip is separated from the wafer such that a chip width is an integer multiple of the die width and such that a chip height is an integer number of the rows of mirror assemblies without requiring the chip height to be an integer multiple of the die height.

Abstract: The strain gauges comprise an insulated substrate (6) carrying metallic layers (1-4) formed as a labyrinthine patterns, characterised in that the metallic layers are carried on opposite sides of the substrate in a substantially matching relationship mounted on a Platform (7). The platform may carry two sets of gauges set at right angles to each other so as to sense movement in two dimensions. The platform may be designed to emulate a snowboard surface, a skateboard surface or a pair of skis.