Abstract: A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.

Abstract: A strain sensitive element for use in a system for converting mechanical movement of relatively movable portions of the element into electrical signals, includes a substantially planar substrate comprising an N-type silicon crystal material wherein the substrate includes groove means extending into the substrate defining an integral hinge portion between at least two relatively movable parts. At least one unitary strain gage extends across the groove means without any separate support so that the strain gage and the hinge portion are spaced apart. The strain gage is a unitary member derived from the same silicon crystal material of the substrate and comprises P-type silicon material. The strain gage is joined to two of the relatively movable parts of the substrate. At least one unitary conductor extends across the groove means without separate support so that the conductor and the hinge portion are spaced apart.

Abstract: A sensitive deflector beam having an integral deflectable element utilizes an immobilization pin and a limit pin to prevent damage to the deflectable element during fabrication and use. The immobilization pin is inserted through the beam and to the deflectable element to hold the element rigidly in place during fabrication. Thus, relatively rigorous operations such as polishing and circuit deposition may be accomplished without damage to the element.

Abstract: Disclosed is a pressure transducer package comprising a housing and a substantially cylindrical chamber formed into the housing, a first end of the chamber comprising a substantially flat surface. The package further comprises a substantially cylindrical interface plate having first and second substantially flat end surfaces, one end surface of the interface plate facing the first end surface of the chamber. The package further comprises a pressure transducer comprising a pressure sensitive silicon die mounted to a substantially cylindrical support member. The support member comprises first and second substantially flat end surfaces. The other end surface of the interface plate faces one end surface of the support member. The housing comprises plug apparatus for hermetically sealing the chamber, the plug apparatus having a substantially flat surface forming a second end of the chamber.

Abstract: A high-temperature hetero-epitaxial piezo-resistive pressure sensor in which an epitaxial layer of a wide-bandgap semiconductor such as GaAs is grown onto a silicon wafer and the piezoresistors are implanted into the wide-bandgap layer.

Abstract: A strain sensitive element for use in a system for converting mechanical movement of portions of the element which are movable relative to each other into electrical signals, includes a planar substrate including an N-type silicon material wherein the substrate includes grooves extending into the substrate defining an integral hinge portion between at least two relatively movable parts. At least one strain gage extends across a groove without any separate support so that the strain gage and the hinge portion are spaced apart. The strain gage is joined to two of the relatively movable parts of the substrate. At least one elongate frangible link extends across a concave pit in the substrate. The frangible link is derived from the same silicon material as the substrate. The midportion of the frangible link is spaced from the lower surface of the pit and the end portions of the frangible link are joined to the substrate. At least one resistor is provided.

Abstract: A monolithic accelerometer is fabricated with an integral cantilever beam sensing element which is etched out of a silicon wafer from the back surface. A thermal silicon oxide is formed on both surfaces of a (100) silicon wafer. Silicon oxide is removed from the back surface in a pattern which defines the sides of the cantilever beam and the sides of an alignment groove. The width and orientation of the openings in the silicon oxide are selected to control the depth of etching when the wafer is subsequently etched with an anisotropic etchant. An integrated circuit is then formed on the front surface and dry etching is used to complete the groove and separate the sides of the beam from the wafer.

Abstract: A strain gauge includes a flexible substrate and film of microfine grains of amorphous silicon connected between electrodes. A strain gauge assembly comprises a substrate, a first electrode formed on the substrate, a semiconductor body connected at a first end to the first wire and including a plurality of layers of different semiconductor materials forming a blocking diode and a resistance, and a second electrode connected to a second end of the semiconductor body such that the diode and resistance are between the first and second electrodes.

Abstract: Velocity saturated strain sensitive devices (13 and 14) can be formed of a layer of silicon on an insulating substrate (11) having a silicon conducting channel of a selected size and proper doping levels to allow carrier velocity saturation to occur therein at reasonable potentials applied across the conducting channel region (21, 24). When operated in velocity saturation or near thereto, a strain imposed on the device, corresponding to deformation of the substrate on which the device is formed, results in large changes in the voltage-current characteristics of the device. The large voltage-current changes occuring with strain effectively provide very high, non-linear gauge factors. Devices can be formed on an insulating substrate, such as sapphire, or can be prepared by diffusing an impurity of one conductivity type into a silicon substrate of the opposite conductivity type to form an isolated channel.

Abstract: A low cost piezoresistive pressure transducer utilizing premolded elastomeric seals and adapted for automatic assembly, and a method of producing the transducer. A piezoresistive stress sensitive element in the form of a diaphram of semiconductor material having a thickened rim is held at its rim between a pair of premolded elastomeric seals in a thermoplastic housing. Electrical connections with external circuitry are made with strain relief jumpers which connect conductive regions on the element outside the seals to conductors which pass through the housing wall.

Abstract: Semiconductor strain measuring apparatus for producing electrical output signals indicative of physical strains, in which a single crystal silicon substrate has the impurity concentration within the range between 1.times.10.sup.16 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3, thereby inhibiting the increase in the reverse leakage current flowing from the strain gauge through the substrate at high temperatures and thus enabling exact measurements even at high temperatures above 180.degree. C.

Abstract: The force measuring device comprises two plates arranged essentially parallel to each other and having therein between an elastomeric material into which a pressure sensor is embedded.

Abstract: In a push-button switch, the switch element is a cantilever (2) of thin silicon strain gauge material with a small magnet (1), e.g. of samarium cobalt alloy at its free end. Adjacent to the free end there is an annular magnet (3), e.g. of plastics material impregnated with samarium cobalt alloy, on the push rod (4) of the switch. The annular magnet (3) is so poled that movement of the rod (4) causes, due to magnetic forces, the deflection of the silicon strain gauge to give an electrical output.The return force, plus collapse action, is provided by a soft iron collar (5) on the switch structure.

Abstract: A load cell wherein strain gauges are produced by a thin film process on a pattern forming surface of a strain-inducible element in such a manner that the resistances of the strain gauges are varied in accordance with deformations caused in thin portions of the strain-inducible element, and adjustable resistors are deposited by the thin film process for an electric circuit assembly including a differential amplifier, a potential divider, a signal amplifier and a zero-point setter. And each of the resistors is adjusted by trimming simultaneously with trimming adjustment of the strain gauges.

Abstract: A constant bending moment device (70) for strain gauge measurement of a force (F) upon an object (32) by means of bending moment. Device (70) is provided with a base member (30) that is adapted to engage object (32) and has a pair of spaced-apart column members (34, 36) extending away from the side of base member (30) facing away from object (32). Column members (34, 36) have respective substantially parallel neutral axis (38, 40) and respective moment arms (37, 39) that extend generally orthogonally towards each other in overhanging relationship to base member (30) and merge at a common portion (24) therebetween having a loading axis (46) that is substantially parallel to neutral axis (38, 40) and equidistant therebetween.

Abstract: An electrical strain gauge is provided in which the strain-responsive circuit element is formed from a thin film deposit on a surface of a metal substrate on which an insulating film has already been deposited. Connections are made directly to the circuit element by the ends of connecter leads that are bonded into insulating plugs in apertures in the substrate. The plugs and the insulating film are glasses to which the substrate and the circuit element are bonded. A further glass layer encapsulates the circuit element. As a result a very robust form of gauge is provided that can be used in high temperatures and in chemically active environments.

Abstract: A load cell has strain gage resistors, lead portions for connecting them in a bridge and compensating portions for the compensation of the bridge balance, span or the like, which are laminated as metal thin films by means of the thin film technique. A protection film is formed over the metal thin films and trimmed by laser beams, and the protection film is made of a pigmented protection film made of synthetic resin for easy and accurate trimming.

Abstract: In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.

Abstract: A structure is provided, such as a capacitive transducer, utilizing two or more layers of semiconductor material wherein a highly insulating low capacitance bond is achieved by the invention herein between two adjacent layers by forming an inlay of glass in one layer and anodically bonding the other layer to the polished surface of the previously formed inlay.

Abstract: An electromechanical transducer is provided, and the process for making it, which utilizes a piezoresistive element or gage which is crystallinally the same as the base or substrate upon which it is supported. The gage of the invention is a force gage, and is derived from its substrate by etching in a series of steps which, ultimately, provide a gage with substantially reduced strain energy requirements, because the volume of the gage may be as small as 3.times.10.sup.10 cubic centimeters of stressed material. In its most preferred form, the element or gage is etched free of its substrate to provide, in effect, a "floating gage." This is achieved by defining the gage in its substrate or in material rigidly bonded to its substrate, etching away immediately adjacent material, and leaving the gage free in space, while supported at each end on the substrate.

Abstract: An etch stopped layer portion overlying a (100) or (110) major face of a diamond cubic semiconductor material is undercut anisotropically etched by orienting a side edge of the etch stopped layer portion which is to be undercut, at an angle to the most nearly parallel {111} trace on the (100) or (110) face. The etch time is further reduced by slotting through the etch stopped layer with slots oriented at an angle to the {111} traces on the underlying (100) or (110) face. Undercut bridge structures are formed by undercutting quadrilateral etch stopped layer portions from opposite sides of the quadrilateral or from the sides plus slots forming diagonals of {111} trace quadrilaterals having combined areas coextensive with the area to be undercut.

Abstract: An integrated sensor for force and motion, includes a solid insulating material body, a flexible metal strip for force transmission sealed to and extending out of the body, a piezoresistive probe in the form of a silicon wafer fastened on the metal strip in the body for mechanical loading by the metal strip, conductive connections sealed to and extending out of the body for application to an electrical instrument and for voltage supply to the probe, and at least two electrical terminals connected between the silicon wafer and the conductive connections.

Abstract: A combustion pressure sensor has a first diaphragm adjacent a combustion region for deflecting in response to the magnitude of adjacent pressure. A second diaphragm is spaced from the first diaphragm and deflects as a function of the deflection of the first diaphragm. The second diaphragm is adapted to generate a signal indicative of the deflection of the second diaphragm. A force transmitting means between the first and second diaphragms transmits movement of the first diaphragm to the second diaphragm and reduces heat transfer from the first diaphragm to the second diaphragm.

Abstract: The dynamometer comprises a bar (1) made of elastic material, which is intended to be subjected to the stresses to be measured and the outer surface of which possesses strain gages. This bar (1) is substantially cylindrical and has on its outer surface a series of resistive strips (3a,4,4a,5,5a) arranged in at least one helix, these strips being of substantially equal lengths, and each strip extending over part of the periphery of the bar (1) and being separated from the following strip in the direction of advance of the helix, the ends of some of these strips being connected electrically by means of conductive lamellae (7,8,9). The invention is used to measure bending, torsional and shearing stresses.

Abstract: The load-sensitive element of a load cell is provided with reduced-thickness portions for endowing the cell with flexibility, and a strain gauge is bonded to each reduced-thickness portion. A deposited aluminum tape or a deposited aluminum film, comprising a substrate and a deposited aluminum layer provided on the substrate, is bonded over each strain gauge by using an adhesive, thereby covering each strain gauge with a deposited aluminum layer. Alternatively, each strain gauge is covered with aluminum foil or a deposited aluminum film bonded in place through the intermediary of a rubber sheet interposed between the load-sensitive element and the foil or film, a space being provided around the strain gauge. Furthermore, the strain gauge is covered by a Teflon sheet non-adhesively, and further, a covering member such as a deposited aluminum film or tape covers the strain gauge from the top of the Teflon sheet.

Abstract: A strain gauge transducer (10) disclosed has particular utility when utilized with a bolt (12) to sense loading and has a construction which permits accurate axial alignment, testing before installation, removal for inspection and any necessary repair, and accurate readings that are not substantially affected by bending loading. The transducer (10) includes a body (30) having a web (40) extending between a threaded inner end (32) and an enlarged outer head (34). An annular seat (36) on the head (34) engages a bolt hole surface as the threaded inner end (32) is received by a threaded portion of the bolt hole. At least two strain gauges (46) are utilized with each mounted on one of the parallel web surfaces (42), and wires (50) connected to the strain gauges extend through a wire passage (48) in the enlarged head to permit a signal to be sensed by the strain gauges and fed to suitable instrumentation. In the preferred construction, the web (40) has a thickness in the range of about 0.020 to 0.

Abstract: A vapor and moistureproof electrical component such as an electrical load cell is formed by mixing a light oil such as mineral oil with liquid silicone gel and then curing the mixture in place to encapsulate an electrical component.

Abstract: A strain gage element system includes a spring flexure member on which strain gages of convention design are mounted, and a heat shrinkable waterproof tube that is placed over the gage and the support and shrunk into place. The spring flexure member is formed so that it has a substantially constant peripheral length about the perimeter of any cross-sectional plane perpendicular to the longitudinal axis of the spring flexure member. The heat shrinkable tube must be selected in size and shrinkage characteristics to tightly envelope and shrink against the gage and spring flexure member and seal the gage completely to prevent moisture of any kind from getting into contact with the gage.

Abstract: The invention relates to a process for producing silicon diaphragm pressure transducers, and to pressure transducers so produced, which will operate in high temperature applications above 150.degree. C. by properly insulating the strain gauges from the diaphragm. This is achieved by utilizing two properly oriented silicon wafers which are joined together by a two-step diffusion technique, which includes the diffusion bonding of one boron doped wafer surface into the other wafer surface previously oxide coated, at greatly reduced pressures and temperatures than heretofore used. This simultaneous diffusion takes place because of prior contouring or the forming of relief channels into one of the bonded surfaces, and because only one joined surface is oxide coated, thus reducing process times substantially. That is, there is a continuous diffusion of boron into the boron oxide coated surface resulting in a boron rich layer of great uniformity.

Abstract: Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.

Abstract: A strain sensor includes an insulating resin, e.g. polyimide resin, film formed on a beam body having a strain generating section and a wiring layer having a resistance material, e.g. nickel-chrome, layer formed on the polyimide resin film and a gold layer selectively formed on the nickel-chrome layer. A solid powder, e.g. silicon dioxide, is mixed with the polyimide resin film.

Abstract: An electromechanical transducer is provided, and the process for making it, which utilizes a piezoresistive element or gage which is crystallinally the same as the base or substrate upon which it is supported. The gage of the invention is a force gage, and is derived from its substrate by etching in a series of steps which, ultimately, provide a gage with substantially reduced strain energy requirements, because the volume of the gage may be as small as 33.times.10.sup.10 cubic centimeters of stressed material. In its most preferred form, the element or gage is etched free of its substrate to provide, in effect, a "floating gage. " This is achieved by defining the gage in its substrate or in material rigidly bonded to its substrate, etching away immediately adjacent material, and leaving the gage free in space, while supported at each end on the substrate.

Abstract: A hybrid transducer employing a ceramic substrate having on a surface a suitable geometry for defining an active or clamped area, a semiconductor strain gage is positioned on said substrate within said active area and connections are made to said gage by conductors printed on said substrate by thick or thin film techniques. Thick film printing techniques or thin film deposition techniques are employed to print the conductors, terminal areas, compensating resistors and stop members.

Abstract: A plurality of thin pressure sensors are made by processing a first large wafer (20, 110) to provide a plurality of electronic devices (28, 122, 124, 125) having a characteristic which varies inversely with strain, and processing a second wafer (40) to provide a plurality of cavities (46) each registered on the second wafer so as to be registerable with a corresponding device on the first wafer. The wafers (20, 40, 110) have thick undoped silicon substrates (21, 41, 114) which are utilized as handles or carriers during the processing, and are stripped off by etching to a highly doped boron etch stop layer (22, 42, 112) when the processing has proceeded to a point where the need therefore has been satisfied. The first wafers (20, 110) are provided with a suitable pattern of borosilicate glass (except in the region where the pressure sensors are formed) so that the two wafers may be joined by a field assisted bonding at a suitable temperature in a vacuum.

Abstract: A transducer for sensing pressure, wherein the transducer is formed of a single crystal semiconductor square chip having piezoresistive stress sensors disposed on one surface thereof and a cavity formed in the opposite surface, and wherein one of the edges of the chip is oriented at an angle of substantially 22.5.degree. with respect to a <110> crystal direction of the chip.

Abstract: A load cell includes a bridge circuit having first to fourth strain gauge resistors and first and second temperature compensating resistors connected to the respective first and second strain gauge resistors. The first to fourth strain gauge resistors comprise a Nichrome layer formed on an insulating film, the first and second temperature compensating resistors each comprise a two-layered structure of the Nichrome layer and a titanium layer formed thereon, and connecting means for connecting the first to fourth strain gauge resistors and first and second temperature compensating resistors comprise a three-layered structure of the Nichrome layer and titanium layer and also a gold layer formed on the titanium layer.

Abstract: A semiconductor strain gauge comprises an elastic member having a surface subject to stress; a semiconductor substrate secured to the elastic member and including at least one PN junction wherein both the P type and N type material is composed of amorphous semiconducting material; and an electrical connection for conducting a signal indicative of strain.

Abstract: A member of composite material incorporates at least one strain responsive member within a part at which a strain is induced by a load in use. A signal which is a function of a strain detetected by the strain responsive member is communicated to an indicator or monitoring device which registers the applied load causing the strain.In one embodiment a leaf spring for a vehicle comprises upper and lower elements of one or more superimposed strips of pre-impregnated longitudinally extending carbon fibres and an inner element of one or more strips of pre-impregnated glass fibres. During laying up of the strips two strain gauges (13, 14), which may be on or integral with a carrier strip, and their leads (13a, 13b, 14a, 14b) are introduced into the active length of the spring which experiences a bending moment on the application of a load. The gauges are positioned at a pre-determined distance apart which is maintained when the member is cured, as by hot press moulding.

Abstract: A semiconductor strain gauge comprises an elastic member having a surface subject to stress; a semiconductor substrate composed of an amorphous semiconducting material secured to the surface of the elastic member; and an electrical connection on the amorphous material for conducting a signal indicative of strain.

Abstract: The invention generally relates to methods and devices for installing in a tubular shaft multiple strain gages, and more particularly to a method and a device for pneumatically forcing strain gages into seated engagement with the internal surfaces of a tubular shaft in an installation of multiple strain gages in a tubular shaft. The essence of the invention involves the novel concept of seating strain gages or other electronic devices in a template-like component, wrapping the template-like component about a pneumatically expansible body, inserting the component into a shaft and expanding the body pneumatically, a suitable adhesive having been applied to the surfaces.

Abstract: A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.

Abstract: A diaphragm is formed in a silicon chip by etching a rectangular cavity in one side thereof and piezoresistive resistors are formed in the other surface of the chip to sense stress changes on the diaphragm due to pressure changes. At least one resistor is placed along the edge of the diaphragm where a sharp stress peak occurs. To avoid the problem of inaccurate placement of the resistor relative to the peak, the resistor is slanted with respect to the stress ridge at a small angle of 10.degree. to 20.degree.. This makes the resistor placement and cavity alignment much less critical thereby assuring greater uniformity of response from one sensor to another at the expense of signal size for a given pressure change on the device.

Abstract: A data sensor comprises a carrier member consisting of metal and shaped as a hollow section (1) and subdivided into adhering sections (2 and 3) and a measuring section (5). The adhering sections carry annular discs (4) and the measuring section (5) has strain gauges (6 and 7) arranged in mutually diametrically opposing positions. Within the area of the measuring section (5) the strain gauges (6 and 7) connected with the periphery of the carrier member are covered by an insulating mastic (8) with a self-welding tape (9) wound therearound. A shrinking hose (10) is provided as an outermost cover for the measuring section. The ratio of the cross-sectional area (F.sub.B) defined by the outer contour of the hollow section (1) and the cross-sectional area (F.sub.M) of the material of the hollow section are selected to equal the ratio of the coefficient of elasticity (E.sub.M) of the material of the carrier member and the coefficient of elasticity (E.sub.B) of the concrete (FIG. 1).

Abstract: There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.

Abstract: A mechanical force to electrical signal transducer includes a flexible metal body operable as a beam in which a bending strain is to be measured as a measure of a mechanical force. At least a part of one surface of the metal body includes an electrical insulating material with a resistance element formed from a layer of a thick film resistor ink of the type used for thick film integrated circuits fused upon the electrical insulating material. A plurality of such transducers may be combined in a weighing scale, with the individual transducers electrically interconnected to provide for electrical summing of the transducer signals to provide a total weight measurement.

Abstract: Disclosed is a manual control means for motor-assisted manual control of a motor-driven member.A control handle bears against the centre of a deformable diaphragm in the form of a cross. The outer end of each of the arms of the diaphragm is mounted to pivot freely in a fixed support means. When the diaphragm is deformed by movements of the handle, pairs of strain gauges attached to each of the arms produce electrical signals which are processed for use to control the motor-driven member to cause it to be driven in the sense of the movement of the handle.

Abstract: A load-cell balance having a parallelogram load cell body constituted by a stationary column, movable column and two arms connected between these columns, each arm having thin-walled flexible portions to which adhered are strain gauges. Each strain gauge is coated and sealed by a coating made of a material of butyl rubber group so as to be protected against moisture. The coating permits a free deflection of deflectable parts of the balance, even when the load is small, while maintaining a good moisture proof nature, so that the reliability of the balance is much enhanced.

Abstract: Off-center load applications to strain gage pick-ups or transducers are substantially compensated by reducing the off-center load application sensitivity of such transducers. This is accomplished by providing the strain gage of the transducer with additional strain gage components which are so located that the effective position of the strain gage device is shifted on its supporting spring body. Thus, although the strain gage device remains physically in position on the supporting spring body, the center of the coordinate system which defines the ordinate of the system can be shifted in any one of the four directions of the system. If the spring body is equipped with a single strain gage only then the point of load application should lie upon the ordinate of the coordinate system what can be achieved by that shifting. If the spring body is equipped with more than one strain gage then the symmetry of the whole strain gage circuitry can be improved by shifting of the respective strain gage coordinate systems.

Abstract: A strain gage transducer, preferably of the above double bending spring or beam type, has secured to its spring or springs strain gage elements etched out of foil from which further conductor configurations have been simultaneously etched. These further conductor configurations are shunted by interruptable short circuits. Some of these configurations have such a shape that they are substantially nonsensitive to strain and hence located in a zone or zones of the spring or beam where the deformation due to strain is relatively small, for example in a central zone. Others of these configurations have a shape to exhibit large creeping. The latter shapes and the respective strain gage elements are secured to the spring or springs substantially in zones of large deformation. By interrupting the proper short circuits the negative creeping of the foil strain gage compensates the positive creeping of the respective spring.

Abstract: A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.