Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: One anode 350 and multiple cathodes 50, 60, 70, and 80 create a large display field emission device. The use of one anode 350 facilitates an image which is seamless to the viewer. The use of multiple cathodes 50, 60, 70, and 80 allows a single image or multiple images to be displayed. The use of multiple cathodes also provides fast refresh rates and a high resolution image. Methods of fabricating and operating the large display field emission device are disclosed.

Abstract: It is an object of the invention to provide an image forming apparatus capable of easily obtaining a white balance and performing image display with excellent color reproduction properties, and a method of manufacturing and adjusting the image forming apparatus. A plurality of surface conduction electron-emitting devices (1002) are arranged on a substrate (1001). Light emission is performed in accordance with the colors (R, G, and B) of phosphors applied to a phosphor film (1008) upon electron emission from the devices, so that an image is formed. The electron-emitting characteristics of the surface conduction electron-emitting devices (1002) are shifted in advance in correspondence with corresponding phosphor colors. Therefore, a satisfactory white balance of light emission of the R, G, and B phosphors can be obtained.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A field emission image display that can provide color blur-free, high brightness, high resolution images is provided. Patchlike cathode electrodes are connected in a zigzag pattern with cathode lead-out electrodes. Plural patchlike gate electrode pairs arranged in the row direction in two lines of patchlike gate electrodes adjacent to each gate lead-out electrode are connected to the gate lead-out electrode every other row. The right neighbor patchlike gate electrode and the left neighbor patchlike gate electrode with respect to the patchlike gate electrodes to be driven are set to a low potential. At the same time, the anode electrode area immediately above the driven patchlike gate electrode is driven. Anode electrodes neighbor to the driven anode electrode are set to a low potential.