Abstract: In some embodiments, a circuit includes a first amplifier, a second amplifier, and a counter. The first amplifier operates based on a first power supply voltage and generates a first output signal by comparing a ramp signal and a reset signal of a pixel signal output from a pixel array during a first operation period and comparing the ramp signal and an image signal of the pixel signal output from the pixel array during a second operation period. The second amplifier operates based on the first power supply voltage, generates a second output signal based on the first output signal and adjust a voltage level of the second output signal from a low level to a third level. The counter operates based on a second power supply voltage, counts pulses of the second output signal, and outputs a counting result as a digital signal.

Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Abstract: An imaging system including a sensor wafer and a logic wafer. The sensor wafer includes a plurality of pixels arranged in rows and columns, the plurality of pixels arranged in rows and columns and including at least a first pixel and a second pixel positioned in a first row included in the rows. The sensor wafer includes a first transfer control line associated with the first row, the first transfer control line coupled to both a first transfer gate of the first pixel and a second transfer gate of the second pixel. The logic wafer includes a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel, a first storage control line coupled to a first storage gate associated with the first pixel and a second storage control line coupled to a second storage gate associated with the second pixel.

Abstract: The present invention relates to a dynamic adjustment method for adjusting a frame per second. The method includes steps of cyclically sampling a first image and a second image captured by an image capturing device based on a sampling time interval and uploading the first image and the second image to a server; executing an image variation rate algorithm on the server to acquire an image variation rate by comparing the first image with the second image; and adjusting the frame per second for the image capturing device to a first frame per second when all of the image variation rates within a first time window are less than a first threshold.

Abstract: A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits.

Abstract: Dual-aperture digital cameras with auto-focus (AF) and related methods for obtaining a focused and, optionally optically stabilized color image of an object or scene. A dual-aperture camera includes a first sub-camera having a first optics bloc and a color image sensor for providing a color image, a second sub-camera having a second optics bloc and a clear image sensor for providing a luminance image, the first and second sub-cameras having substantially the same field of view, an AF mechanism coupled mechanically at least to the first optics bloc, and a camera controller coupled to the AF mechanism and to the two image sensors and configured to control the AF mechanism, to calculate a scaling difference and a sharpness difference between the color and luminance images, the scaling and sharpness differences being due to the AF mechanism, and to process the color and luminance images into a fused color image using the calculated differences.

Abstract: Provided is a display device including a communication device for receiving an input image containing a first frame and a second frame, an image quality controller for performing a first image quality control on at least a portion of the first frame, and a gain generator for calculating a gain of the second frame based on the first frame where the first image quality control has been performed, wherein the image quality controller performs a second image quality control applied with the gain for at least a portion of the second frame.

Abstract: A method for increasing dynamic range of a time-delay integration (TDI) image includes assigning a value N to a line-number setting and generating each line of the TDI image by (i) selecting N lines from N corresponding images of an image sequence, and (ii) integrating the N lines. The brightness of the TDI image is evaluated, after which the line-number setting is updated to a new value. In another method, the value of a TDI pixel is initialized to the value of a corresponding pixel in a first image of the image sequence. While the TDI pixel value is less than a ceiling, a contribution is added to the TDI pixel value, the contribution being based on the value of an additional corresponding pixel in an additional image of the image sequence. After adding, the resulting TDI pixel value may be scaled based on the number of contributions.

Abstract: An electronic apparatus includes: an image sensor for acquiring pixel values of first pixels sensed during a first exposure time and second pixels sensed during a second exposure time longer than the first exposure time; and a controller for outputting an output image acquired based on pixel values of the first pixels and a corrected saturated pixel value obtained by correcting a pixel value of a saturated pixel having a pixel value exceeding a threshold value among the second pixels, using a pixel value of at least one first pixel having a distance closest to a position of the saturated pixel among the first pixels.

Abstract: According to an aspect, a detection device includes: a substrate; a plurality of photodiodes arranged on a first principal surface of the substrate; a protective film that covers the photodiodes; a plurality of lenses provided for each of the photodiodes so as to face the photodiode with the protective film interposed between the lenses and the photodiodes; and a projection provided between the lenses. A top of the projection is located at a position higher than a top of each of the lenses when viewed from the first principal surface.

Abstract: An imaging device is provided. The imaging device may sense light passing through a corresponding imaging lens and a corresponding color filter in sensing elements disposed in a sensing region for each color channel, and generate sensing data based on a grouping of color intensity values sensed by the sensing elements for each sensing region based on a binning size determined based on an illuminance of light.

Abstract: Aspects of the present disclosure include systems, methods, and devices use a controllable matrix filter to selectively obscure regions of an image sensor's field of view. The controllable matrix filter is a physical component that may be placed in front of an image sensor and, in certain situations, one or more regions of the otherwise transparent matrix filter may be selectively configured to have an increased optical density such that the one or more regions become opaque thereby blocking out certain regions of the image sensor's field of view. In this way, the controllable matrix filter may be used to mask out certain regions in an image sensor's field of view that may present processing difficulties for downstream systems that utilize information from the image sensor.

Abstract: A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Abstract: A depth sensor and an image detecting system including the same are provided. The depth sensor includes a pixel that generates an image signal based on a sensed light. The pixel includes a first photo transistor that integrates first charges based on a first photo gate signal toggling during an integration period, a second photo transistor that integrates second charges based on a second photo gate signal toggling during the integration period, a first transfer transistor that transfers the first charges to a first floating diffusion node based on a first transfer gate signal, a second transfer transistor that transfers the second charges to a second floating diffusion node based on the first transfer gate signal, and a switch that is connected with the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor.

Abstract: Disclosed are devices, systems and methods for capturing an image. In one aspect an electronic camera apparatus includes an image sensor with a plurality of pixel regions. The apparatus further includes an exposure controller. The exposure controller determines, for each of the plurality of pixel regions, a corresponding exposure duration and a corresponding exposure start time. Each pixel region begins to integrate incident light starting at the corresponding exposure start time and continues to integrate light for the corresponding exposure duration. In some example embodiments, at least two of the corresponding exposure durations or at least two of the corresponding exposure start times are different in the image.

Abstract: Fluorescence imaging with reduced fixed pattern noise is disclosed. A method includes actuating an emitter to emit a plurality of pulses of electromagnetic radiation and sensing reflected electromagnetic radiation resulting from the plurality of pulses of electromagnetic radiation with a pixel array of an image sensor. The method includes reducing fixed pattern noise in an exposure frame by subtracting a reference frame from the exposure frame. The method is such that at least a portion of the plurality of pulses of electromagnetic radiation emitted by the emitter comprises electromagnetic radiation having a wavelength from about 770 nm to about 790 nm.

Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.

Abstract: An image sensor including an ADC circuit receiving pixel data to be supplied in parallel from the a pixel array, outputting a reference signal in accordance with a digital code, comparing the reference signal and the pixel data, and outputting the digital code at which the reference signal and the pixel data have a predetermined relation, the ADC circuit including a ramp-signal generating circuit outputting a ramp signal having a gradient with respect to change of the digital code, the gradient being different between when the digital code is in a first range and when the digital code is in a second range different from the first range and an attenuator receiving the ramp signal to be supplied and outputting the reference signal having a gradient being the same between when the digital code is in the first range and when the digital code is in the second range.

Abstract: A setting regarding a dynamic range is performed before image capturing, and in a case where a setting indicating a high dynamic range (HDR) is performed, RAW image data is recorded in association with development information corresponding to an HDR, and in a case where a setting indicating a standard dynamic range (SDR) is performed, RAW image data is recorded in association with development information corresponding to an SDR.

Abstract: Embodiments of the present disclosure include an event-based image sensor and an event filtering method for use with an event-based image sensor. The event-based image sensor comprises a plurality of pixel circuits forming a pixel array, each pixel circuit comprising a photoreceptor circuit configured to generate a photoreceptor signal derived from a photocurrent generated by a light impinging on a light-sensitive element of the photoreceptor circuit, and a detector configured to detect a change in the photoreceptor signal and to generate an event in response to the detected change in the photoreceptor signal. The event-based image sensor further includes a processing chain and an event filter that is configured to receive the generated event and to accept the received event based on a plurality of conditions.

Abstract: An electronic device includes: a display control unit that is configured to display at a display unit a first image generated by capturing an image with light having entered a first area of an image sensor and a second image generated by capturing an image with light having entered a second area at the image sensor different from the first area; and a selection unit that is configured to select either the first area or the second area as an area for image-capturing condition adjustment in reference to the first image and the second image displayed at the display unit.

Abstract: An image sensor device includes a sensor array and a processing circuit. The sensor array includes a plurality of pixel units each including a photodiode unit and a storage capacitor. The sensor array generates an image of a specific frame, and the photodiode unit is illuminated by a light ray to generate a photodiode current which is stored in the storage capacitor when the image sensor device performs an exposure operation. The processing circuit generates a reference current according to photodiode current(s) of photodiode unit(s) of pixel unit(s) before the exposure operation arranged for the specific frame starts, and predicts a length of an exposure time interval of the exposure operation for the specific frame based on the generated reference current.

Abstract: In one embodiment, a method includes determining characteristics of one or more areas in an image by analyzing pixels in the image, computing a sampling density for each of the one or more areas in the image based on the characteristics of the one or more areas, generating samples corresponding to the image by sampling pixels in each of the one or more areas according to the associated sampling density, and providing the samples to a machine-learning model as an input, where the machine-learning model is configured to reconstruct the image by processing the samples.

Abstract: A monitoring system is presented for monitoring plants' conditions in one or more plant growing areas.

Abstract: A method for processing images by an information handling system includes receiving image data including first frames captured using a first exposure at a first frame rate and second frames captured using a second exposure at a second frame rate. The first frame rate is greater than the second frame rate. The method includes merging each second frame of the second frames with each first frame of a corresponding plurality of the first frames to generate a corresponding plurality of merged frames. Each merged frame of the corresponding plurality of merged frames may have a dynamic range of tonal values greater than each dynamic range of tonal values of each frame merged to form the merged frame.

Abstract: An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

Abstract: A mounting area in a solid-state imaging device that detects an address event. The solid-state imaging device includes a light receiving chip and a detection chip. In the solid-state imaging device including the light receiving chip and the detection chip, the light receiving chip includes a photodiode that photoelectrically converts incident light and generates a photocurrent. In addition, in the solid-state imaging device, the detection chip quantizes a voltage signal corresponding to the photocurrent generated by the photodiode in the light receiving chip and outputs the voltage signal as a detection signal.

Abstract: There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

Abstract: An image sensor comprises: a pixel region including a plurality of microlenses arranged in a matrix, and a plurality of photoelectric conversion portions provided for each of the microlenses; a plurality of amplifiers that apply a plurality of different gains to signals output from the pixel region; and a scanning circuit that scans the pixel region so that a partial signal and an added signal are read out, the partial signal being a signal from some of the plurality of photoelectric conversion portions, and the added signal being a signal obtained by adding the signals from the plurality of photoelectric conversion portions.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: An organic photoelectric film on a substrate may perform photoelectric conversion of incident light. Pixel electrodes are arranged in a matrix form in an X-axis direction and a Y-axis direction between the substrate and the organic photoelectric film. A driving circuit may read pixel information from each pixel electrode of a pixel electrode line including a plurality of pixel electrodes arranged in the X-axis direction, and applies an on-voltage or an off-voltage to each pixel electrode 40 of the pixel electrode line. The driving circuit may scan a photoelectric conversion ON region to which the on-voltage is applied in the ?Y-axis direction in synchronization with a timing of scanning a read line to which the pixel information is read in the ?Y-axis direction.

Abstract: An imaging apparatus and electronic equipment configured for reduced power consumption are disclosed. In one example, an imaging apparatus includes a pixel array unit including a first pixel portion and a second pixel portion different from the first pixel portion. Each of the first pixel portion and the second pixel portion includes a first photoelectric conversion unit and a second photoelectric conversion unit adjacent to the first photoelectric conversion unit. The pixel array unit includes a first drive line connected to the first photoelectric conversion unit of the first pixel portion and the second pixel portion, a second drive line connected to the second photoelectric conversion unit of the first pixel portion, and a third drive line connected to the second photoelectric conversion unit of the second pixel portion. The t technology can, for example, be applied in a CMOS image sensor having pixels for phase difference detection.

Abstract: Disclosed are a pixel unit, and an imaging method and apparatus thereof. The pixel has a first and a second pixel sub-portion each comprising one or more photodiodes; one or more transfer transistors each coupled to a floating diffusion, for transferring the charges generated by the one or more photodiodes in response to incident light during an exposure period and accumulated in the photodiode during said exposure period respectively to the floating diffusion; a reset transistor; and a source follower transistor coupled to the floating diffusion for amplifying and outputting the pixel signal of the floating diffusion. In some embodiments, the pixel further includes a capacitor and a gain control transistor.

Abstract: The complementary metal oxide (CMOS) image sensor CIS includes a plurality of pixels arranged in a two-dimensional (2D) array and each including a photodiode, a plurality of analog-to-digital converters (ADCs) configured to perform auto exposure in units of the pixels, and a readout circuit configured to read pixel signals of the pixels, in rows. The plurality of pixels and the plurality of ADCs are the same in number and are connected in a one-to-one correspondence to each other. Each of the plurality of ADCs performs AE on a corresponding one of the pixels.

Abstract: An imaging device includes a pixel unit including pixels arranged in rows and columns, a pixel control unit that outputs, from each pixels, a first signal based on a charge generated during a first exposure period and a second signal based on a charge generated during a second exposure period, and an exposure time determination processing unit that determines a length of the second exposure period based on the first signal. The pixel unit includes areas each including at least one pixel, the exposure time determination processing unit determines the length of the second exposure period in each areas based on the first signal in each areas, and the pixel control unit starts the second exposure period in the pixels in a first area after outputting the first signal from the pixels in the first area and before outputting the first signal from the pixels in a second area.

Abstract: An information processing apparatus comprises: a correction unit that sequentially inputs count values of a plurality of pixels from an image sensor and corrects the input count values, the image sensor having the plurality of pixels each of which has a sensor that outputs a pulse signal in response to an incident of a photon and a counter that counts the number of pulse signals. In a case where a count value reaches a maximum value, the counter resets the count value to 0 and continues counting, and, in a case were an input count value is obtained by continuing counting after the count value is reset to 0, the correction unit corrects the input count value.

Abstract: Techniques are described for luminance-adaptive processing of hexa-deca red-green-blue-white (RGBW) color filter arrays (CFAs) in digital imaging systems. Original image data is acquired by a sensor array configured according to a hexa-deca RGBW CFA pattern, and associated ambient luminance information is also acquired. The ambient luminance information is used to detect one of a number of predetermined luminance conditions. Based on the detected luminance condition, embodiments can determine whether and how much to downsample the original image data as part of the readout from the sensor array (e.g., using binning techniques), and whether and how much to remosaic and/or upsample the downsampled data to generate an RGB output array for communication to other processing components of the imaging system.

Abstract: Disclosed are a pixel unit, and an imaging method and apparatus thereof. The pixel comprises a first and a second pixel sub-portion each comprising one or more photodiodes; one or more transfer transistors each coupled to a floating diffusion, for transferring the charges generated by the one or more photodiodes in response to incident light during an exposure period and accumulated in the photodiode during said exposure period respectively to the floating diffusion; a reset transistor; and a source follower transistor coupled to the floating diffusion for amplifying and outputting the pixel signal of the floating diffusion. In some embodiments, the pixel further includes a capacitor and a gain control transistor.

Abstract: A radiation imaging apparatus includes a first pixel, and a second pixel whose sensitivity for radiation is lower than sensitivity of the first pixel; and a decision unit configured to execute a reset operation of resetting charges in the pixels and a decision operation of deciding a radiation dose during irradiation to the apparatus. In the decision operation, the decision unit reads out signals from the first and second pixels at least once, and decides first and second correction values based on the signal read out from the first and second pixel respectively, and reads out signals from the first and second pixels after receiving a radiation irradiation start request, and decides the radiation dose during irradiation to the apparatus using values of the signals read out from the first and second pixels and the first and second correction values.

Abstract: An X-ray sensor includes a substrate, a photodiode disposed in the substrate, a reset transistor connected with the photodiode, a source follower transistor connected with the photodiode, and a select transistor connected with the source follower transistor. The photodiode includes a plurality of charge accumulation layers disposed in the substrate and arranged in a direction perpendicular to a surface of the substrate, a plurality of pinning layers disposed on the charge accumulation layers, respectively, and a well region for electrically connecting the charge accumulation layers with the reset transistor and the source follower transistor.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Abstract: An imaging device includes a plurality of unit pixels disposed into pixel groups that are separated from one another by isolation structures. Unit pixels within each pixel group are separated from one another by isolation structures and share circuit elements. The isolation structures between pixel groups are full thickness isolation structures. At least a portion of the isolation structures between unit pixels within a pixel group are deep trench isolation structures.

Abstract: An imaging device that generates a pulse signal by utilizing photoelectric conversion operation is provided. A data potential generated by the photoelectric conversion operation is input to a pulse generation circuit to output a pulse signal having a spike waveform. In addition, a structure in which product-sum operation of pulse signals is performed is provided, and digital data is generated from a new pulse signal. The digital data is taken into a neural network or the like, whereby processing such as image recognition can be performed. Processing up to taking an enormous amount of image data into a neural network or the like can be performed in the imaging device; thus, processing can be efficiently performed.

Abstract: Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.

Abstract: An image sensor includes a pixel array including a first shared pixel and a second shared pixel that are adjacent to each other in a row direction. The first shared pixel includes two or more photo diodes in a first row and two or more photo diodes in a second row, and the first shared pixel includes a first floating diffusion region shared by the photo diodes of the first shared pixel. The second shared pixel includes two or more photo diodes in the first row and two or more photo diodes in the second row, and the second shared pixel includes a second floating diffusion region shared by the photo diodes of the second shared pixel.

Abstract: Systems for coherent light detection are provided, including a system comprising a light source configured to generate light; a first optical assembly configured to split the light into a reference arm and a sample arm; a second optical assembly configured to illuminate a sample with light of the sample arm, thereby generating a sample signal; a third optical assembly configured to combine the sample signal with light of the reference arm, thereby generating an interference signal; and a detector assembly comprising an array of carrier injection photodetectors, the array arranged to collect the interference signal. Methods of using the systems are also provided.

Abstract: The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

Abstract: An imaging apparatus capable of capturing two images which may not be obtained by the general HDR imaging by simultaneously capturing two images of different exposures by changing exposure change rates of a low exposure image and a high exposure image is provided. The imaging apparatus includes a calculation unit configured to calculate a first exposure for obtaining a first image included in the plurality of images under a first condition and calculate a second exposure for obtaining a second image included in the plurality of images under a second condition which is different from the first condition, and a setting unit configured to set an exposure for obtaining the first and second images based on the first and second exposures calculated by the calculation unit.

Abstract: A high dynamic range sensing device is disclosed. The device may comprise an array of Bayer-pattern units of color filters, each of the color filters corresponding to a pixel of the sensing device, and each of the color filters overlapping with a plurality of photodiodes.

Abstract: A pixel arrangement structure and a display device are provided. The pixel arrangement structure includes a plurality of repeating units. The repeating units include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel. Center points of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel in a same repeating unit form a quadrilateral. Four adjacent sub-pixels in adjacent repeating units constitute a shared pixel, and the shared pixel includes at most two sub-pixels belonging to the same repeating unit.