Abstract: A classifier system implementing an equivalent deep neural network (DNN) includes a weight block, classification block, row selector, and sensor array coupled with the weight block, classification block and row selector. The sensor array includes row lines, column lines, a data integration line, an integration start line, and multiple sensor cells corresponding to respective neurons in an input layer of the equivalent DNN. The sensor cells share a common terminal connected to the data integration line, the row lines are controlled by the row selector, and the column lines receive respective weight values from the weight block. The classification block includes a first integrator receiving a signal generated on the data integration line when the integration start line is selected, and a first thresholding unit receiving a signal from the first integrator. The first thresholding unit is coupled to second integrators and second thresholding units arranged in a two-dimensional matrix.

Abstract: In some embodiments, a ToF sensor includes an illumination source module, a transmitter lens module, a receiver lens module, and an integrated circuit that includes a ToF imaging array. The ToF imaging array includes a plurality of SPADs and a plurality of ToF channels coupled to the plurality of SPADs. In a first mode, the ToF imaging array is configured to select a first group of SPADs corresponding to a first FoV. In a second mode, the ToF imaging array is configured to select a second group of SPADs corresponding to a second FoV different than the first FoV.

Abstract: The invention relates to a phthalocyanine compound, which has a structure as represented by Formula I, wherein A represents a transition metal or a rare earth metal; R1 represents a phenyl group, a naphthyl group, or a C4-C16 n-alkyl group. The aromatic phthalocyanine compound having the structure of Formula I provided in the invention contains a transition metal or a rare earth metal, and introduces a peripheral substituent into a linearly extended ?-conjugated system. It is relatively stabler at 400° C. or less and will be easily evaporated in vacuum to form a uniform thin film, and has good thermal stability, high chemical stability, and high mobility. The organic semiconductor device has the features of relatively fast on-off speed, relatively high on-off ratio, and strong reliability.

Abstract: The present invention describes an optical distance measuring device having a pulsed radiation source that is implemented to transmit, in a temporally contiguous radiation pulse period, a radiation pulse having a pulse duration tp that is shorter than the radiation pulse period, and to transmit no radiation pulse in a temporally contiguous dark period. Further, the optical distance measuring device includes a detector for detecting different amounts of radiation in two overlapping detection periods during the radiation pulse period to capture reflections of the radiation pulse at an object surface and a background radiation and/or in two overlapping detection periods during the dark period to capture background radiation. The optical distance measuring device further includes an evaluator determining a signal depending on a distance of the optical distance measuring device to an object based on the detected amount of radiation.

Abstract: Methods and systems for increasing the effective dynamic range of an image sensor are disclosed. Each pixel in the sensor is exposed for a respective first exposure time. Each pixel's response to the respective first exposure is measured and compared to threshold values. Based on the pixel's response to the respective first exposure time, an optimal exposure is calculated for each pixel. The optimal exposure time is applied to each pixel by utilizing row-enabled and column-enabled signals at each pixel within the sensor.

Abstract: A method is disclosed of a heterogeneous image sensor array comprising more than one image sensor structures that are interconnected. The final image sensor array image output for each image sensor structure or pixel is computed using single image sensor structure output data or output data from more than one image sensor structures. The heterogeneous array exhibits complexity, cost, power consumption, device yields and reliability benefits when compared to other image sensor array structures.

Abstract: A transistor (24) which acts as a load-current source for a source follower amplifying transistor (22) for outputting a pixel signal to a pixel output line (40) is provided in each picture element (10), whereby a high bias current is prevented from passing through the high-resistance pixel output line (40), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line (40) into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.

Abstract: An optical device includes an optical module, e.g. with an objective lens, a printed circuit board, an image recording element and a supporting plate. In one embodiment, the optical module and the image recording element are arranged on one side of the supporting plate, the printed circuit board is arranged on the opposite side of the supporting plate, and the image recording element and the printed circuit board are contacted to each other through one or more openings in the supporting plate. In another embodiment, the image recording element is arranged in an opening in the supporting plate and directly joined to the printed circuit board.

Abstract: A solid-state imaging apparatus includes: a plurality of pixels; a reference signal generating circuit configured to generate a ramp signal; a counter performing a counting operation according to the changing of the ramp signal; a read out circuit having a comparator comparing a signal read out from the pixel with the ramp signal, and converting an analog signal outputted from the pixel to a digital signal; and a control circuit configured to adjust a reset potential to be used when the comparator is reset, wherein the control circuit obtains a conversion value derived by converting an analog signal derived of a reset level of the pixel to a digital signal, and adjusts a reference potential based on the conversion value to make a dynamic range of A/D conversion follow the fluctuation of the reset level of the pixel.

Abstract: To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed.

Abstract: An image sensor module includes a ceramic substrate, an image sensor, a conductive film, and a bottom plate. The ceramic substrate includes an upper surface, a lower surface opposite to the upper surface, a side surface connected between the upper surface and the lower surface. The ceramic substrate has a through hole through the upper and lower surfaces, a receiving recess on the lower surface, and an air hole on the side surface. The through hole communicates with the receiving recess, and the air hole communicates with the receiving recess. The image sensor is received in the receiving recess and is electrically connected to the ceramic substrate. The bottom plate is positioned on the lower surface and electrically connected to the ceramic substrate by the conductive film.

Abstract: A solid-state imaging device simultaneously completes pixel reset operation on all of pixels included in a unit cell when performing pixel reset scanning in a curtain shutter synchronous mode. The pixel reset operation is processing in which a photodiode corresponding to one of transfer transistors is reset. The pixel reset scanning is processing in which the pixel reset operation is performed on a row basis. The curtain shutter synchronous mode is a mode in which exposure of an imaging region to incident light is started by the pixel reset scanning and ended by blocking the incident light by a mechanical curtain shutter provided on an optical path of the incident light.

Abstract: A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.

Abstract: A solid-state imaging device according to the present invention includes: a semiconductor substrate; a plurality of pixels disposed on the semiconductor substrate in rows and columns; a column signal line formed for each of the columns; an inverting amplifier connected to the column signal line; and a feedback line, provided for each of the columns, to feed back output signal of the inverting amplifier to pixels in a corresponding column, wherein the amplifying transistor includes a gate connected to the pixel electrode and outputs signal voltage corresponding to the pixel electrode to a column signal line via the selection transistor, and one of a source and a drain of the reset transistor is connected to the pixel electrode and the other is connected to a corresponding feedback line.

Abstract: An imaging apparatus having a solid state imaging device that includes first photoelectric conversion elements and second photoelectric conversion elements arranged in a two dimensional array, comprises a device control unit that performs a driving in which a first signal according to electrical charges accumulated in the first photoelectric conversion elements during a first exposure period and a second signal according to electrical charges accumulated in the second photoelectric conversion elements during each of second exposure periods are read by sequentially exposing the second photoelectric conversion elements for the second exposure periods, each of which overlaps with the first exposure period and has different length of time, during periods overlapped with the first exposure period while simultaneously exposing the first photoelectric conversion elements for the first exposure period.

Abstract: An imaging device includes: an imaging sensor 110; a main circuit substrate 120 includes a first ground conductor; an imaging sensor cable 130 that includes a second ground conductor, has the imaging sensor 110 mounted thereon, and is connected to the main circuit substrate 120; a metal plate 150 that is disposed between the main circuit substrate 120 and an area of the imaging sensor cable 130 where the imaging sensor 110 is mounted thereon, and that is electrically connected to the second ground conductor; and a ground connection conductor 190 that electrically connects between the first ground conductor and the metal plate 150. The ground connection conductor 190 is disposed in an area where the imaging sensor 110 and the imaging sensor cable 130 overlap each other or in an area where the imaging sensor 110 and the main circuit substrate 120 overlap each other.

Abstract: A method of manufacturing a solid-state image sensor having a photoelectric conversion portion includes forming a silicon nitride film by a low-pressure chemical vapor deposition method using hexachlorodisilane (Si2Cl6) as a material gas such that the silicon nitride film covers at least a part of the photoelectric conversion portion.

Abstract: A pixel array including circuitry for combining charges accumulated by individual pixels in the array enables addition and/or subtraction of individual pixel values, prior to their digitization, in the pixel array.

Abstract: In an embodiment, a solid-state image sensor comprises: pixels arranged in columns and rows; read signal lines each connected to pixels arranged in a row direction; and output signal lines each connected to pixels arranged in a column direction. The read signal lines are classified into a first type of read signal lines each connected to a group of pixels on which R and B rays are incident, and a second type of read signal lines each connected to a group of pixels on which G rays are incident. Two pixels (R, B) on two adjacent columns are arranged on two opposite sides with respect to the first type of read signal line. Two pixels (Gr, Gb) on two adjacent columns are arranged on two opposite sides with respect to the second type of read signal line.

Abstract: An aspect of one present embodiment, there is provided a solid state image processer, including a sample-and-hold circuit sampling an output signal of the CCD to hold the output signal of the CCD as voltage, a pre-buffer receiving an output signal of the sample-and-hold circuit, a selection circuit receiving the output signal of the pre-buffer as a first input signal and the output signal of the CCD as a second input signal to select the first input signal or the second input signal as an output signal of the selection circuit according to an instruction of a selection signal, and a main buffer receiving the output signal of the selection circuit.

Abstract: A method of operating a camera with a microfluidic lens to identify a depth of an object in image data generated by the camera has been developed. The camera generates an image with the object in focus, and a second image with the object out of focus. An image processor generates a plurality of blurred images from image data of the focused image, and identifies blur parameters that correspond to the object in the second image. The depth of the object from the camera is identified with reference to the blur parameters.

Abstract: A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: A solid-state image sensor has a plurality of pixel units, each pixel unit including a plurality of pixels, and a charge-voltage converter shared by the plurality of pixels. The sensor includes a structural portion including a plurality of wiring layers, an interlayer insulating film, and light waveguides configured by embedding, in portions of the interlayer insulating film located above the photoelectric converters, a material having a refractive index higher than that of the interlayer insulating film. A dummy pattern is formed in the structural portion to reduce a difference between a sensitivity of a first pixel and that of a second pixel, which is produced by a difference between a structure in a periphery of the light waveguide arranged above the photoelectric converter of the first pixel and that of the second pixel.

Abstract: Double pass back side image (BSI) sensor systems and methods are disclosed. The BSI sensor may include a substrate, pixel reflectors formed on the substrate, and pixel photodiodes fabricated in the substrate, each pixel photodiode positioned over a respective one of the pixel reflectors. Micro-lenses may be formed over each photodiode and an image filter may be formed between the photodiodes and the micro-lenses. The pixels reflectors, photodiodes, micro-lenses, and filter may be formed using CMOS fabrication.

Abstract: A solid-state image capturing apparatus including: a pixel array unit including two-dimensionally arranged pixels each including a photoelectric conversion unit, a transfer transistor that transfers charges accumulated in the photoelectric conversion unit, and a charge discharging transistor that selectively discharges the charges accumulated in the photoelectric conversion unit; and a driving unit that performs driving for reading signals from each pixel of the pixel array unit, and drives the charge discharging transistor by using a signal for the driving.

Abstract: An image processing apparatus that enables to make a periodic noise in a captured image less noticeable without making the whole construction thereof complicated. An image pick up unit accumulates electric charges corresponding to an optical image of a target object and transfers the accumulated electric charges, and also reads them out as image signals. A control unit drives the image pick up unit to read out the image signals consecutively from the image pick up unit in a field-by-field base in such a manner so as to make the horizontal cycle of each field different from one another.

Abstract: To reduce the number of capacitative elements on a chip to decrease a surface ratio of a peripheral circuit section including capacitative elements to a pixel array section, while maintaining noise resistance of signals high. There is provided a solid-state imaging device including: a plurality of unit pixels; a plurality of transfer lines; and a plurality of switches, wherein each of the unit pixels includes a photoelectric conversion element and a charge voltage conversion element, and outputs respectively a noise voltage generated when the charge voltage conversion element is reset and a signal-noise sum voltage obtained by adding to the noise voltage a signal voltage generated by photoelectric conversion to the other transfer lines that are connected via the switches to the transfer line to which the pixel group including the unit pixel belongs.

Abstract: A circuit for processing an analog signal having a time sequence of discrete signal levels, each of which lies in a time interval and represents an information-bearing segment of the interval while the rest of the time interval is a non-information-bearing segment, comprises a transistor in emitter-follower or source-follower configuration, a high emitter or source resistance or, instead, a high-ohm constant current source, and a device for applying a voltage supply, as well as a switch which is connected between the emitter and a reference potential to prevent a current from flowing via the high-ohm resistance or the high-ohm voltage source for charge reversal of an output capacitance of the circuit in one direction, whereas for charge reversal in the other direction the dynamic current boosting effect of the transistor is exploited. This results in a fast emitter-follower or source-follower circuit which is particularly suitable as the output stage for image sensors.

Abstract: Providing for pausing data readout from an optical sensor array is described herein. By way of example, an interruption period can be introduced into a readout cycle of the optical sensor array to suspend readout of data. During the interruption period, other operations related to the optical sensor array can be performed, including operations that are typically detrimental to image quality. Moreover, these operations can be performed while mitigating or avoiding negative impact on the image quality. Thus, greater flexibility is provided for global shutter operations, for instance, potentially improving frame rates and fine control of image exposure, while preserving image quality.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.

Abstract: To avoid reset noise in a CMOS chip for direct particle counting, it is known to use Correlative Double Sampling: for each signal value, the pixel is sampled twice: once directly after reset and once after an integration time. The signal is then determined by subtracting the reset value from the later acquired value, and the pixel is reset again. In some embodiments of the invention, the pixel is reset only after a large number of read-outs. Applicants realized that typically a large number of events, typically approximately 10, are needed to cause a full pixel. By either resetting after a large number of images, or when one pixel of the image shows a signal above a predetermined value (for example 0.8 × the full-well capacity), the image speed can be almost doubled compared to the prior art method, using a reset after acquiring a signal.

Abstract: A photoelectric conversion apparatus includes a plurality of unit pixels each including a first photoelectric conversion unit, a second photoelectric conversion unit, and a pixel output unit shared by the first photoelectric conversion unit and the second photoelectric conversion unit. The unit pixels are arranged in a first direction, and the first and second photoelectric conversion units are arranged in a second direction different from the first direction.

Abstract: A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity.

Abstract: A method of increasing dynamic range of pixels in an imaging sensor is disclosed. In one aspect, two image captures are performed, one at a first short integration time and one at a second optimum integration time. An electrical value obtained from a pixel or group of pixels at the first short integration time is used to predict the second integration time using a comparison with a set of reference values. The reference values relate to a saturation electrical value for each pixel or group of pixels to predict the second integration time. The first short integration time is determined as a fractional multiple of the saturation electrical value. The second integration times are such that there is no saturation of the pixel or group of pixels. Adjustments can be made to the reference values to allow for offset immunity and variability in light levels during the second integration time.

Abstract: Apparatus and a method for performing neutral density filtering in a digital camera. The camera includes a pixel array having rows and columns of pixels. The pixels in the array may be reset and read with variable timing between the reset operation and the read operation. The timing between the reset and read operations is controlled to implement a neutral density filtering operation.

Abstract: An interface circuit for an image receiving apparatus is disclosed. The interface circuit includes a plurality of signal transporting units, and each of the signal transporting units has a first signal receiving terminal and a second signal receiving terminal for receiving a first input signal and a second input signal respectively. Each of the signal transporting units compares the first input signal and the second input signal to generate a compare result. Each of the signal transporting units outputs the first input signal and the second input signal and/or the compare result according to a setting mode.

Abstract: A solid-state imaging including a comparing circuit, an inverting circuit, and a masking circuit, and that performs column parallel AD conversion processing of analog pixel signals output from a plurality of pixels arranged in a two-dimensional matrix form. The comparing circuit outputs a difference signal obtained by comparing each of the pixel signals outputted from the pixels with a reference signal having a ramp waveform. The inverting circuit inverts a logic of the difference signal outputted from the comparing circuit. The masking circuit masks an output of an output signal of the inverting circuit to a circuit in a subsequent stage during an input offset canceling period in which the comparing circuit cancels an input offset between the pixel signal and the reference signal.

Abstract: To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed.

Abstract: An image sensing system for an electronic device. The image sensing system includes a lens and an image sensor. The image sensor includes a indirectly lit area of pixels and a directly lit area of pixels. The lens is in optical communication with the directly lit area of pixels.

Abstract: A read out operation for reading out image data from a conversion circuit irradiated with a radiation, and a read out operation for reading out offset image data from the conversion circuit without irradiated with a radiation are selectively conducted, a control is conducted to repeat at a plurality of times the operation for reading out the offset image data, offset data corresponding to each pixel is extracted from one of the plurality of the offset image data to generate corrective offset image data such that offset data corresponding to all the pixels in a row of the matrix is not extracted from one of the plurality of offset image data, and the corrective offset image data is subtracted from the image data to perform an offset correction to render line noise less noticeable, for an offset correction without line noise by a simple signal processing to be provided.

Abstract: A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.

Abstract: A focus detection apparatus includes: a photoelectric conversion unit of a charge accumulation type, including a plurality of sensors; an accumulation controller for controlling charge accumulation of the photoelectric conversion unit; an accumulation time measuring unit for measuring accumulation time; a correction computing unit for performing correction computing of a photoelectric conversion signal; and a focus detection computing unit for performing focus detection computing. The accumulation controller detects a signal of accumulation completion in a first sensor of the plurality of sensors, and then forces sensors except the first sensor to terminate the charge accumulation. The correction computing unit performs the correction computing of the photoelectric conversion signal based on first accumulation time that is accumulation time of the first sensor and second accumulation time that is different from the first accumulation time.

Abstract: Methods are disclosed for digital cameras to gain tilt information of an image sensor of the camera in order to achieve a fast correction for this tilt. By moving the lens of the camera to positions providing a maximum sharpness of at least three regions of interest (ROI) in the image sensor the tilt of the image sensor is calculated by using the correspondent lens/sensor distances and the distances of the different ROIs to the center of the image sensor. Yaw and pitch values of the tilt of the image sensor are calculated to enable an alignment of the sensor.

Abstract: An adjacent color difference data generator calculates a differential between adjacent data in a data row having different color information per pixel of the digital signal to thereby generate a first color difference data having a first code format. A code converter converts the first color difference data into a second color difference data having a second code format. The second code format is a code format where only a small number of bits change before and after the code conversion from the first code format. The number of changing bits in the switching between codes when, for example, an image monochromatic but having gradation change is imaged to reduce any noise generated when digital image data is outputted.

Abstract: A focus detection apparatus includes: an image sensor that has a first pixel group which receives a luminous flux passing a first pupil area of an imaging optical system, and a second pixel group which receives a luminous flux passing a second pupil area different from the first pupil area; a storage unit that stores first and second distribution functions corresponding to the first and second pupil areas, respectively; a calculation unit that generates a first image signal by performing calculations on a first subject image, obtained from the first pixel group, using the second distribution function, and generates a second image signal by performing calculations on a second subject image, obtained from the second pixel group, using the first distribution function; and a focus state detection unit that detects a focus state of the imaging optical system based on the first and the second image signals.

Abstract: The camera according to the present invention has an imaging unit, a sensor having a quantum efficiency of 60% or higher in a visible light range for detecting a focal point adjustment state in the imaging unit, and a control unit for outputting a control signal for adjusting the focal point on the imaging unit on the basis of the output from the sensor.

Abstract: This disclosure describes: (1) two different schemes to enhance dynamic range, (2) a new motion detection scheme using in-pixel digital storage, and (3) the motion detection in high illumination for CMOS image sensors. The schemes may be implemented in a small pixel size and easily incorporated in simple column-level circuits for existing CMOS image sensor systems.

Abstract: According to one embodiment, a solid state imaging device has a semiconductor substrate. First, second and third photoelectric conversion portions are provided in a surface region of the semiconductor substrate. A blue color filter has a film thickness to give a first light path length. A green color filter has a film thickness to give a second light path length longer than the first light path length. A red color filter has a film thickness to give a third light path length longer than the second light path length. A flattening film is formed on the blue color filter, the green color filter and the red color filter. The flattening film flats steps of the color filters. Micro lenses are provided on the flat film. Each of the micro lenses is formed at a position corresponding to each of the first, second and third photoelectric conversion portions.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.